CN215668053U

CN215668053U - Plasmon optical enhancement chip system

Info

Publication number: CN215668053U
Application number: CN202121890090.8U
Authority: CN
Inventors: 不公告发明人
Original assignee: Shanghai Jinguan Technology Co ltd
Current assignee: Shanghai Jinguan Technology Co ltd
Priority date: 2021-08-11
Filing date: 2021-08-11
Publication date: 2022-01-28
Anticipated expiration: 2031-08-11

Abstract

The utility model provides a plasmon optical enhancement chip system which comprises a nanopore chip, an integrated optical chip and an image sensor chip, wherein the nanopore chip comprises a substrate layer, an exciting light introduction layer, a microcavity layer and a metal film, at least one reaction unit is arranged in the microcavity layer, the reaction unit comprises a Bragg reflector and a microcavity, and a nano opening is formed in the bottom surface of the microcavity; the integrated optical chip comprises at least one optical unit for collecting the optical signal excited at the nanometer opening, processing and outputting the optical signal; the image sensor chip comprises at least one photoelectric conversion unit for receiving the optical signal output by the integrated optical chip and converting the optical signal into an electric signal. The plasmon optical enhancement chip system utilizes the amplification effect of a plasmon enhancement electric field to efficiently excite molecules at the opening of the microcavity nanometer, has ultrahigh sensitive detection capability, can realize ultrahigh sensitive optical detection of the lowest single molecule, and can be applied to the fields of single molecule detection and DNA/RNA sequencing.

Description

Plasmon optical enhancement chip system

Technical Field

The utility model belongs to the technical field of biochips, and relates to a plasmon optical enhancement chip system.

Background

The biochip has wide application, wide application in life science research and practice, medical research and clinic, drug design, environmental protection, agriculture, military and other fields, and wide economic, social and scientific research prospects. How to improve the detection sensitivity of the biochip becomes an important technical problem to be solved urgently by those skilled in the art.

SUMMERY OF THE UTILITY MODEL

In view of the above-mentioned shortcomings of the prior art, the present invention aims to provide a plasmon optical enhancement chip system for solving the problem of low detection sensitivity of the biochip in the prior art.

To achieve the above and other related objects, the present invention provides a plasmon optical enhancement chip system, comprising:

the nanopore chip comprises a substrate layer, an excitation light introduction layer, a microcavity layer and a metal film, wherein the excitation light introduction layer is positioned between the substrate layer and the microcavity layer, at least one reaction unit is arranged in the microcavity layer, the reaction unit comprises a Bragg reflector and a microcavity, the microcavity extends from an opening on the top surface of the microcavity layer to the bottom surface of the microcavity layer to form a nanometer opening, the Bragg reflector is distributed on two sides of the microcavity and is separated from the microcavity by a preset distance, a through hole communicated with the microcavity through the nanometer opening is arranged in the excitation light introduction layer, and the metal film is positioned on the upper surface of the microcavity layer and covers the surface of the Bragg reflector and the surface of the microcavity;

the integrated optical chip is positioned above the nanopore chip and comprises at least one optical unit which is used for collecting the optical signal excited at the opening of the nanometer hole and outputting the collected optical signal after processing;

and the image sensor chip is positioned above the integrated optical chip and comprises at least one photoelectric conversion unit which is used for receiving the optical signal output by the integrated optical chip and converting the optical signal into an electric signal.

Optionally, the excitation light introduction layer comprises a single mode waveguide.

Optionally, the material of the substrate layer includes silicon dioxide, the material of the excitation light introduction layer includes silicon nitride, and the material of the microcavity layer includes silicon.

Optionally, the open area of the microcavity is tapered from top to bottom.

Optionally, the shape of the nano-opening comprises one of a rectangle, a square, and a circle.

Optionally, the optical unit includes a collection grating coupler, a planar waveguide, a multimode waveguide, and a static interferometer, where the collection grating coupler is configured to collect an optical signal excited at the nano opening and transmit the optical signal to the static interferometer sequentially through the planar waveguide and the multimode waveguide, and the static interferometer is configured to generate an interference signal and project the interference signal into the image sensor chip.

Optionally, the optical unit further includes a micro-ring resonator structure disposed beside the multimode waveguide to filter the excitation light.

Optionally, the micro-ring resonator structure includes a ring waveguide, a strip waveguide, and a metal block, where the ring waveguide is located between the multimode waveguide and the strip waveguide, and the metal block is connected to an output end of the strip waveguide.

Optionally, the plasmon optical enhancement chip system further comprises a laser and an optical fiber, and the nanopore chip is connected to the laser through the optical fiber.

Optionally, the excitation light generated by the laser enters the nanopore chip through the optical fiber in an end-face coupling manner or a grating coupling manner.

Optionally, the plasmon optical enhancement chip system includes a plurality of the reaction units, a plurality of the optical units, and a plurality of the photoelectric conversion units to form a plurality of detection units, and one of the detection units includes one of the reaction units, one of the optical units, and one of the photoelectric conversion units.

Optionally, the nanopore chip further comprises a multi-stage multi-mode interference coupler connected to the excitation light introducing layer, and the multi-stage multi-mode interference coupler is used for dividing the excitation light in the nanopore chip into a plurality of beams to be input to different reaction units.

As described above, the plasmon optical enhancement chip system has ultrahigh sensitive detection capability, and can realize ultrahigh sensitive optical detection of the lowest single molecule. The principle is that molecules in the optical enhancement antenna structure are efficiently excited by utilizing the amplification effect of a plasmon enhancement electric field, so that optical signals with single-molecule sensitivity are obtained, wherein the optical signals comprise spectral signals and/or fluorescence. The plasmon optical enhancement chip system can be applied to the fields of single molecule detection and DNA/RNA sequencing.

Drawings

FIG. 1 shows the structure and schematic diagram of a plasmon optical enhancement chip system according to the present invention.

FIG. 2 is a partial top view of the nanopore chip.

FIG. 3 is another partial top view of the nanopore chip.

Fig. 4 is a schematic diagram showing the operation of the nanopore chip.

Fig. 5 shows a schematic diagram of the end-coupling mode.

Fig. 6 shows a schematic diagram of the grating coupling method.

Fig. 7 shows a schematic diagram of a rectangular grating for the grating structure in the coupling grating.

Fig. 8 shows a schematic diagram of a sector grating selected for the grating structure in the coupling grating.

Fig. 9 is a schematic diagram of a sub-wavelength grating for use in a grating structure in a coupling grating.

Fig. 10 shows a schematic view of the collection grating coupler in a semi-elliptical shape.

Figure 11 shows a schematic view of the collection grating coupler in a semi-circular shape.

Fig. 12 shows a schematic diagram of a microring resonator structure.

FIG. 13 is a schematic diagram of a chip spectrometer formed by packaging a static interferometer and an image sensor chip.

FIG. 14 is a schematic diagram of a multi-array format of the plasmonic optical enhancement chip system.

FIG. 15 is a schematic diagram of a multimode interference coupler structure.

FIG. 16 is a schematic diagram of a multi-stage multi-mode interference coupler structure.

Fig. 17 shows a schematic structure of a second static interferometer.

Fig. 18 shows a schematic structure of a third static interferometer.

Fig. 19 is a schematic diagram of a fourth static interferometer.

Fig. 20 is a schematic structural diagram of a fifth type of static interferometer.

Description of the element reference numerals

1 nanopore chip

101 microcavity layer

102 metal film

103 Bragg reflector

104 micro-cavity

105 nm opening

106 excitation light introducing layer

107 through hole

108 multi-stage multi-mode interference coupler

109 substrate layer

110 optical waveguide

111 grating structure

112 waveguide

112a planar waveguide

112b single mode waveguide

2 Integrated optical chip

201 collection grating coupler

202 planar waveguide

203 multimode waveguide

204 static interferometer

204a multimode interference coupler structure

204b grating structure

204c multi-stage multi-mode interference coupler structure

204d interferometer unit structure

204e multimode waveguide

204f mirror

204g multimode interference coupler

204h loop waveguide

204i incident waveguide

204j input coupler

204k array waveguide

204l output coupler

204m exit waveguide

204n microlens array

205 micro-ring resonator structure

205a ring waveguide

205b strip waveguide

205c metal block

3 image sensor chip

4 laser

5 optical fiber

501 single mode optical fiber

6 chip type spectrometer

7 molecule

8 data processing device

M surface plasmon

Detailed Description

The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The utility model is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.

Please refer to fig. 1 to 20. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.

The utility model provides a plasmon optical enhancement chip system, please refer to fig. 1, which shows a structure and a schematic diagram of the plasmon optical enhancement chip system, and includes a nanopore chip 1, an integrated optical chip 2 and an image sensor chip 3, wherein the nanopore chip 1 includes a substrate layer (not shown in fig. 1), an excitation light introduction layer 106, a microcavity layer 101 and a metal film 102, the excitation light introduction layer 106 is located between the substrate layer and the microcavity layer 101, at least one reaction unit is disposed in the microcavity layer 101, the reaction unit includes a bragg reflector 103 and a microcavity 104, the microcavity 104 is opened from a top surface of the microcavity layer 101 and extends to a bottom surface of the microcavity layer 101 to form a nano opening 105, the bragg reflector 103 is distributed on two sides of the microcavity 104 and spaced from the microcavity 104 by a predetermined distance, a through hole 107 communicated with the microcavity 104 via the nano opening 105 is disposed in the excitation light introduction layer 106, the metal film 102 is positioned on the upper surface of the microcavity layer 101 and covers the surface of the bragg reflector 103 and the surface of the microcavity 104; the integrated optical chip 2 is positioned above the nanopore chip 1, and the integrated optical chip 2 comprises at least one optical unit for collecting the optical signal excited at the position of the nano opening 105 and outputting the collected optical signal after processing; the image sensor chip 3 is located above the integrated optical chip 2, and the image sensor chip 3 includes at least one photoelectric conversion unit for receiving an optical signal output by the integrated optical chip 2 and converting the optical signal into an electrical signal.

As an example, the image sensor chip 3 is connected to a data processing device 8.

As an example, the material of the substrate layer includes silicon dioxide, the material of the excitation-light introduction layer 106 includes silicon nitride, the material of the microcavity layer 101 includes silicon, and the metal film 102 includes at least one of a gold film, a silver film, a copper film, and a platinum film.

As an example, the opening area of the microcavity 104 is gradually reduced from top to bottom, and the size of the nano-opening 105 at the bottom of the microcavity 104 is on the order of nanometers (e.g., 0.1-1000nm) in at least one dimension.

As an example, the bragg reflector 103 includes a plurality of grating grooves formed in the microcavity layer 101, and the grating grooves are opened from the top surface of the microcavity layer 101, extend in the direction of the bottom surface of the microcavity layer 101, and do not penetrate through the bottom surface of the microcavity layer 101.

For example, referring to fig. 2, a partial top view of the nanopore chip 1 is shown, wherein the nano-opening 105 is in the form of a nano-slit. Referring to fig. 3, another partial top view of the nanopore chip 1 is shown, wherein the nano-opening 105 is in a nanopore shape. It should be noted that the shape of the nano-opening 105 may be adjusted as needed, including but not limited to one of a rectangle, a square and a circle, and the arrangement rule of the plurality of grating grooves of the bragg reflector 103 may also be adjusted as needed, which is not limited to the configuration shown in fig. 2 and 3.

Referring to FIG. 4, a schematic diagram of the operation of the nanopore chip 1 is shown, wherein an excitation light (as indicated by a horizontal arrow in the figure) enters the nanopore chip and is then confined in the excitation light introducing layer 106 for transmission, wherein the excitation light introducing layer 106 may includeIncluding a single-mode waveguide, evanescent waves on the surface of the excitation light introduction layer 106 are coupled into the nano-aperture 105, an enhanced electric field of highly localized plasmon resonance is generated at the nano-aperture 105, optical signals of the molecules 7 in the nano-aperture 105, such as fluorescence/raman/vibration/rotation/absorption/reflection spectrum, are excited, an enhanced effect with very high efficiency is achieved, single-molecule detection sensitivity can be achieved (for example, 10 can be generated for raman scattering effect)⁵-10²⁰A multiple enhancement effect). The plasmon resonance enhanced electric field generated at the nano opening 105 can propagate along the surface of the metal film 102 (surface plasmon M is shown in the figure), the bragg reflectors 103 on two sides of the microcavity 104 on the surface of the nanopore chip 1 play a role in reflection, and can partially reflect an optical signal generated in the nano opening 105, so that the effects of reducing the propagation loss of signal photons on the surface and enhancing the optical signal intensity are achieved. The detected molecules 7 can be transported to the nano-opening 105 through the upper side of the nanopore chip 1, and can also be transported to the nano-opening 105 through the lower side of the nanopore chip 1.

For example, referring back to fig. 1, the plasmonic optical enhancement chip system further includes a laser 4 and an optical fiber 5, and the nanopore chip 1 is connected to the laser 4 through the optical fiber 5. Laser instrument 4 and optic fibre 5 provide the optical excitation function in the chip as the indispensable optical component outside the chip framework, laser instrument 4 passes through optic fibre 5 output excitation light source, and the exciting light passes through grating coupling or end-face coupling's mode, and the coupling gets into in the nanopore chip 1.

As an example, the optical fiber 5 may be a single mode optical fiber or a single mode fiber lens.

As an example, please refer to fig. 5, which is a schematic diagram of an end-face coupling manner, wherein excitation light is directly aligned in a short distance with an end face of the optical waveguide 110 on the substrate layer 109 of the nanopore chip 1 through a single mode fiber 501, and light emitted from the single mode fiber 501 can be coupled into the optical waveguide 110 for further transmission.

As an example, please refer to fig. 6, which is a schematic diagram illustrating a grating coupling manner, wherein the excitation light is emitted out to the grating structure 111 on the substrate layer 109 of the nanopore chip 1 through the single mode fiber 501, and is coupled into the waveguide 112 by the grating structure 111 for transmission. The central axis of the single mode fiber 501 is deviated from the normal by a preset angle theta.

As an example, please refer to fig. 7 to 9, which show top views of several common coupling gratings, wherein fig. 7 shows a schematic diagram that the grating structure 111 in the coupling grating is a rectangular grating, fig. 8 shows a schematic diagram that the grating structure 111 in the coupling grating is a sector grating, and fig. 9 shows a schematic diagram that the grating structure 111 in the coupling grating is a sub-wavelength grating. In this embodiment, the whole structure of the coupling grating includes the periodic grating structure 111, and a planar waveguide 112a and a single-mode waveguide 112b connected to the output end of the grating structure 111, and excitation light outside the nanopore chip 1 is coupled into the grating and then continuously transmitted through the single-mode waveguide 112 b.

Referring back to fig. 1, in the integrated optical chip 2, the optical unit includes a collection grating coupler 201, a planar waveguide 202, a multimode waveguide 203, and a static interferometer 204, the collection grating coupler 201 is configured to collect an optical signal excited at the nano-aperture 105 and transmit the optical signal to the static interferometer 204 through the planar waveguide 202 and the multimode waveguide 203 in sequence, and the static interferometer 204 is configured to generate an interference signal and project the interference signal into the image sensor chip 3.

Specifically, the collection grating coupler 201 realizes control of the propagation direction of the light beam by using the principle of a diffraction grating, and realizes the effect of optical collection. In order to increase the collection efficiency, the overall size of the collection grating coupler 201 can be made larger, and the size can be controlled in the range of 50-5000 μm.

For example, please refer to fig. 10 and 11, which are schematic diagrams illustrating sequential connection of the collection grating coupler 201, the planar waveguide 202 and the multimode waveguide 203, wherein the collection grating coupler 201 may be a semi-elliptical shape as shown in fig. 10, or a semi-circular shape as shown in fig. 11.

As an example, the optical unit further includes a micro-ring resonator structure 205, and the micro-ring resonator structure 205 is disposed beside the multimode waveguide 203 to filter out excitation light.

For example, please refer to fig. 12, which is a schematic diagram of the microring resonator structure 205, wherein the microring resonator structure 205 includes a ring waveguide 205a, a strip waveguide 205b, and a metal block 205c, the ring waveguide 205a is located between the multimode waveguide 203 and the strip waveguide 205b, and the metal block 205c is connected to an output end of the strip waveguide 205 b. By designing the size of the ring waveguide 205a, the effect of selecting a specific wavelength can be achieved, photons with the selected wavelength are coupled into the ring waveguide 205a through evanescent waves, interference enhancement is generated when the optical path of the photons propagating in the ring waveguide 205a is equal to an integral multiple of the wavelength, a whispering gallery mode is formed and stays in the ring waveguide 205a for propagation, the photons in the ring waveguide 205a are coupled out through another shorter strip waveguide 205b, and the photons are absorbed through the metal block 205c, so that the effect of removing the photons with the wavelength from the original input photons is achieved, and the filtering of excitation light of a spectrum signal can be achieved.

For example, please refer to fig. 13, which is a schematic structural diagram of a chip spectrometer 6 formed by packaging the static interferometer 204 and the image sensor chip 3, wherein a coupling end of the static interferometer 204 is a multimode interference coupler structure 204a, a spectrum signal is propagated and coupled into the multimode interference coupler structure 204a through the multimode waveguide 203, and is divided into two parts by the multimode interference coupler structure 204a and then enters two parallel optical waveguides (made of silicon nitride) to continue to propagate forward. The widths of the two optical waveguides are specially designed to be different, so that photons transmitted in the two optical waveguides generate phase difference, and when two optical signals are transmitted in the waveguides, evanescent fields generated by total internal reflection are overlapped between the two parallel waveguides to generate interference signals. The periodic grating structure 204b is prepared in the area between the two waveguides, interference signals are diffracted upwards to the image sensor chip 3, the image sensor chip 3 can be a linear or rectangular CCD array and used for receiving the interference signals to obtain interference patterns, and the interference patterns are subjected to Fourier transform processing to obtain spectral information.

For example, referring to fig. 14, a schematic diagram of a multi-array format of the plasmon optical enhancement chip system is shown, which includes a plurality of the reaction units, a plurality of the optical units, and a plurality of the photoelectric conversion units to form a plurality of detection units, where one of the detection units includes one of the reaction units, one of the optical units, and one of the photoelectric conversion units. Wherein, the nanopore chip 1 further comprises a multi-stage multi-mode interference coupler 108, and the multi-stage multi-mode interference coupler 108 is used for dividing excitation light input by an excitation light source into a plurality of beams to be input into different reaction units. The image sensor chip 3 is connected to a data processing device 8.

For example, referring to fig. 15, a schematic diagram of a multimode interference coupler structure is shown, the multimode interference coupler structure is a micro-nano optical device commonly used in the field of integrated optics, in which light waves can propagate, and separates the light waves into two beams to propagate out in a controllable manner, and an ideal 1 × 2 multimode interference coupler structure is a 50/50 beam splitter, which separates the incoming light waves to emit out according to the proportion of 50% and 50%. Referring to fig. 16, a schematic diagram of a multi-stage multi-mode interference coupler structure is shown, according to a binary result, the multi-stage MMI structure can divide the light wave into a plurality of light beams with equal light intensity, and then the light wave continues to transmit in the waveguide.

The working principle of the plasmon optical enhancement chip system is as follows: the laser 4 outputs an excitation light source through the optical fiber 5, the excitation light is coupled into the multi-stage multi-mode interference coupler 108 in the nanopore chip 1 in a grating coupling or end-face coupling manner, the multi-stage multi-mode interference coupler 108 equally divides the excitation light into multiple excitation lights with the same power, the multiple excitation lights enter the excitation light introducing layer 106 and are transmitted (an output structure of the multi-stage multi-mode interference coupler 108 is connected to the excitation light introducing layer 106), and an optical signal of the molecule 7 at the nano opening 105 at the bottom of the microcavity 104 is excited. The excited optical signal is scattered upwards, collected by the collection grating coupler 201, converged into the multimode waveguide 203 through the planar waveguide 202, and transmitted into the static interferometer 204, and the excitation light can be filtered out by the micro-ring resonator structure 205 beside the multimode waveguide 203. The optical signal with the excitation light filtered out enters the static interferometer 204, photons with different wavelengths interfere in the static interferometer 204 and are projected upwards by the scattering grating in the static interferometer 204 to enter the image sensor chip 3 to form an interference pattern, and the interference pattern is subjected to fourier transform to obtain spectral information of the optical signal.

It is noted that the static interferometer 204 is not limited to the type shown in fig. 1, 13, 14, but may be of the type presented in any of fig. 17 to 20, for example.

Specifically, the static interferometer shown in fig. 17 includes a multi-stage multi-mode interference coupler structure 204c and a plurality of interferometer unit structures 204d, where the interferometer unit structure 204d includes fabry-perot interference cavities, and the cavity lengths of the fabry-perot interference cavities of the interferometer unit structures 204d are different, and the length difference value adopts a gradient design, so that a plurality of groups of interference patterns with different fringe intervals and different peak intensities can be finally collected, and an accurate spectrum can be analyzed. In the chip structure, the larger the number of interferometer unit structures, the larger the spectral range that can be resolved.

Specifically, the static interferometer shown in fig. 18 includes a multimode waveguide 204e and a reflector 204f disposed at the end of the multimode waveguide 204e, a spectrum signal propagates forward in the multimode waveguide 204e to the reflector 204f and is reflected back, an incident signal photon and a reflected signal photon generate standing wave interference (indicated by a plurality of oblong shapes in the figure) at the central position of the multimode waveguide 204e, an interference pattern can be captured by using a linear image sensor chip, and spectrum information is obtained after fourier transform.

Specifically, the static interferometer shown in fig. 19 includes a multimode interference coupler 204g and a loop waveguide 204h, a spectrum signal is transmitted to the multimode interference coupler 204g in the multimode waveguide, the multimode interference coupler 204g divides incident signal photons into two beams, the two beams enter the loop waveguide 204h, the two beams of signal photons finally meet at the center of the loop waveguide 204h to generate standing wave interference (shown by a plurality of oblong shapes in the figure), an interference pattern can be shot by using a linear image sensor chip, and spectrum information is obtained after fourier transform.

Specifically, the static interferometer shown in fig. 20 employs an Arrayed Waveguide Grating (AWG), signal photons enter the input coupler 204j from the input Waveguide 204i, the input coupler 204j is configured as a planar Waveguide, the signal photons are diffracted at an interface between the input coupler 204j and the input Waveguide 204i, and the intensity enters the Arrayed Waveguide 204k in a gaussian distribution in a direction perpendicular to the propagation direction. The interface between the arrayed waveguide 204k and the input coupler 204j is a curved surface, which ensures that the diffracted light at each position reaches the end face of the arrayed waveguide 204k with the same phase. The arrayed waveguide 204k is composed of a series of similarly shaped strip waveguides, with adjacent waveguides having the same length difference, and the total length of each waveguide increases/decreases in a gradient manner throughout the array. Due to the length difference, the lights with different wavelengths have the same phase difference after propagating in the arrayed waveguide 204 k. The signal photons enter the output coupler 204l from the arrayed waveguide 204k, the output coupler 204l is also a planar waveguide structure, two end faces of the planar waveguide structure are both curved surfaces, and the two curved surfaces are on the same circumference. The other end of the output coupler 204l is connected to the exit waveguide 204 m. Due to the phase difference, signal photons of different wavelengths are diffracted out of the planar waveguide of the output coupler 204l and focused in the different exit waveguides 204m, achieving the effect of wavelength separation (n wavelengths: λ are illustrated in the figure)₁～λ_n). The exit waveguide 204m focuses the wavelength-separated signal photons on the linear image sensor chip 3 through a microlens array 204n,obtaining interference patterns, and obtaining spectral information after inverse Fourier transform.

Of course, in other embodiments, the static interferometer 204 may be of other suitable types, and should not unduly limit the scope of the present invention.

The plasmon optical enhancement chip system can be applied to detecting optical signals of molecules and can realize ultra-high-sensitivity optical detection of the lowest single molecule. The optical signal includes at least one of a spectral signal and a fluorescent signal. Further, the plasmon optical enhanced chip system can be used for DNA sequencing or RNA sequencing.

It should be noted that the image sensor 3 may include array or linear Photo Multiplier Tubes (PMT), Single Photon Avalanche Diodes (SPAD), Charge Coupled Device (CCD), silicon photo multiplier tubes (SiPM), or may include individual PMT, SPAD, CCD, SiPM, or photodiode. In the case of a single PMT, SPAD, CCD, SiPM, or photodiode, the plasmonic optical enhancement chip system of the present invention can be used to detect the fluorescence signal intensity of a single molecule.

In conclusion, the plasmon optical enhancement chip system has ultrahigh sensitive detection capability, and can realize ultrahigh sensitive optical detection of the lowest single molecule. The principle is that molecules in the optical enhancement antenna structure are efficiently excited by utilizing the amplification effect of a plasmon enhancement electric field, so that optical signals with single-molecule sensitivity are obtained, wherein the optical signals comprise spectral signals and/or fluorescence. The plasmon optical enhancement chip system can be applied to the fields of single molecule detection and DNA/RNA sequencing. Therefore, the utility model effectively overcomes various defects in the prior art and has high industrial utilization value.

The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the utility model. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.

Claims

1. A plasmonic optical enhancement chip system, comprising:

2. The plasmonic optical enhancement chip system of claim 1, wherein: the excitation-light introduction layer includes a single-mode waveguide.

3. The plasmonic optical enhancement chip system of claim 1, wherein: the substrate layer comprises silicon dioxide, the excitation light introducing layer comprises silicon nitride, and the microcavity layer comprises silicon.

4. The plasmonic optical enhancement chip system of claim 1, wherein: the opening area of the micro-cavity is gradually reduced from top to bottom.

5. The plasmonic optical enhancement chip system of claim 1, wherein: the shape of the nano opening comprises one of a rectangle, a square and a circle.

6. The plasmonic optical enhancement chip system of claim 1, wherein: the optical unit comprises a collection grating coupler, a planar waveguide, a multi-mode waveguide and a static interferometer, wherein the collection grating coupler is used for collecting the optical signal excited at the opening of the nanometer and transmitting the optical signal to the static interferometer through the planar waveguide and the multi-mode waveguide in sequence, and the static interferometer is used for generating an interference signal and projecting the interference signal into the image sensor chip.

7. The plasmonic optical enhancement chip system of claim 6, wherein: the optical unit further comprises a micro-ring resonator structure which is arranged beside the multimode waveguide to filter exciting light.

8. The plasmonic optical enhancement chip system of claim 7, wherein: the micro-ring resonator structure comprises a ring waveguide, a strip waveguide and a metal block, wherein the ring waveguide is positioned between the multimode waveguide and the strip waveguide, and the metal block is connected to the output end of the strip waveguide.

9. The plasmonic optical enhancement chip system of claim 1, wherein: the plasmon optical enhancement chip system further comprises a laser and an optical fiber, and the nanopore chip is connected with the laser through the optical fiber.

10. The plasmonic optical enhancement chip system of claim 9, wherein: and exciting light generated by the laser enters the nanopore chip through the optical fiber in an end face coupling mode or a grating coupling mode.

11. The plasmonic optical enhancement chip system of claim 1, wherein: the plasmon optical enhancement chip system comprises a plurality of reaction units, a plurality of optical units and a plurality of photoelectric conversion units to form a plurality of detection units, wherein one detection unit comprises one reaction unit, one optical unit and one photoelectric conversion unit.

12. The plasmonic optical enhancement chip system of claim 11, wherein: the nanopore chip further comprises a multistage multimode interference coupler connected with the excitation light introducing layer, and the multistage multimode interference coupler is used for dividing the excitation light in the nanopore chip into a plurality of beams to be input into different reaction units.