CN215481422U - Molten liquid interval control structure and single crystal rod growth device - Google Patents
Molten liquid interval control structure and single crystal rod growth device Download PDFInfo
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- CN215481422U CN215481422U CN202120553828.5U CN202120553828U CN215481422U CN 215481422 U CN215481422 U CN 215481422U CN 202120553828 U CN202120553828 U CN 202120553828U CN 215481422 U CN215481422 U CN 215481422U
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- connecting arm
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- crystal rod
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- 239000013078 crystal Substances 0.000 title claims abstract description 43
- 239000007788 liquid Substances 0.000 title claims abstract description 24
- 239000010453 quartz Substances 0.000 claims abstract description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims 4
- 239000000155 melt Substances 0.000 description 27
- 230000007547 defect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model relates to a molten liquid interval control structure, which is applied to a single crystal rod growing device and comprises a quartz piece arranged at one end of a guide cylinder close to molten liquid, wherein the quartz piece comprises an L-shaped main body, and the L-shaped main body comprises a first connecting arm connected with the guide cylinder and a second connecting arm vertically connected with the first connecting arm; quartz component still include with the first L shape branch that L shape main part is connected, first L shape branch is located one side that single crystal stick was kept away from to L shape main part, include with the third linking arm of second linking arm vertical connection, and with the fourth linking arm of third linking arm vertical connection, the fourth linking arm with second linking arm parallel arrangement. The utility model also relates to a single crystal rod growing device.
Description
Technical Field
The utility model relates to the technical field of silicon product manufacturing, in particular to a molten liquid spacing control structure and a single crystal rod growing device.
Background
The Melt Gap (Melt Gap) is a distance from the lower end of the guide shell (deflector) to the Melt surface. It is very important to precisely control and maintain Melt Gap during the growth of single crystals. The melt gap has an inseparable relationship with the defects of the crystal bar such as FPD (flow Pattern defect), LDP (Large Displacement Point), COP (Crystal ordered particle), etc. Therefore, optimizing Melt Gap Control technology and precise Control technology are important judgment bases for producing silicon products with better quality.
SUMMERY OF THE UTILITY MODEL
In order to solve the above technical problems, the present invention provides a melt gap control structure and a single crystal rod growing apparatus, which can improve the accuracy of melt gap control.
In order to achieve the purpose, the embodiment of the utility model adopts the technical scheme that: a molten liquid interval control structure is applied to a single crystal rod growth device and comprises a quartz piece arranged at one end, close to molten liquid, of a guide cylinder, wherein the quartz piece comprises an L-shaped main body, and the L-shaped main body comprises a first connecting arm connected with the guide cylinder and a second connecting arm vertically connected with the first connecting arm;
quartz component still include with the first L shape branch that L shape main part is connected, first L shape branch is located one side that single crystal stick was kept away from to L shape main part, include with the third linking arm of second linking arm vertical connection, and with the fourth linking arm of third linking arm vertical connection, the fourth linking arm with second linking arm parallel arrangement.
Optionally, the first connecting arm includes a connecting portion for connecting with the guide shell, and the connecting portion is a polygonal structure.
Optionally, the connecting portion is of a rectangular parallelepiped structure.
Optionally, the connecting part is of a pyramid structure.
Optionally, the quartz piece further comprises a second L-shaped branch connected to the L-shaped main body, the second L-shaped branch is located on one side of the L-shaped main body close to the single crystal rod, and comprises a fifth connecting arm perpendicularly connected to the second connecting arm and a sixth connecting arm perpendicularly connected to the fifth connecting arm, and the sixth connecting arm is parallel to the second connecting arm.
Optionally, the first L-shaped branch and the second L-shaped branch are symmetrically disposed on two sides of the second connecting arm.
Optionally, an axial centerline of the fourth connecting arm, an axial centerline of the second connecting arm, an axial centerline of the sixth connecting arm, and an axial centerline of the single crystal rod are located on the same plane.
The embodiment of the utility model also provides a single crystal rod growing device which comprises the molten liquid interval control structure.
The utility model has the beneficial effects that: on the basis of L shape main part, add first L shape branch, the distance between first L shape branch and the single crystal stick is greater than the distance between L shape main part and the single crystal stick, when avoiding single crystal stick diameter increase, covers the reflection of quartz piece on the melt face to reduce the problem of melt interval accuracy nature.
Drawings
FIG. 1 is a schematic view showing a state in which an inverted image portion of a quartz member on a melt surface is covered in the related art;
FIG. 2 is a schematic view showing a melt gap control structure according to an embodiment of the present invention;
FIG. 3 is a first schematic view of a quartz member according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a second embodiment of a quartz piece according to the present invention;
fig. 5 is a schematic structural view of a guide shell according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the utility model, are within the scope of the utility model.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the production of a single crystal ingot, a method of filling a quartz crucible with polycrystalline silicon, melting and stabilizing the temperature of the melt, and then contacting a Seed crystal (Seed) with the melt to grow the single crystal ingot is widely used. Control of the Melt Gap (Melt Gap) is necessary to obtain a desired defect distribution region or defect-free region. The former way is to drill a small hole at the bottom of the guide shell 1 and then design the hole to meet the requirement
A quartz pin 2 to measure the melt gap, see fig. 1.
The Melt Gap (Melt Gap) is a distance from the lower end of the guide cylinder (deflector) 1 to the Melt surface. At present, after the quartz pin (scale rod)2 is mounted on the guide shell 1, the length of the quartz pin 2 which is added from the lower end of the guide shell 1 is measured by a straight ruler. The distance from the bottom of the quartz pin to the reflection of the bottom on the melt surface is then measured by means of an MLCS (melt Level Control System). The melt distance is the length of the quartz pin which is increased from the lower end of the guide cylinder plus the distance between the bottom of the quartz pin and the reflection of the bottom on the melt surface.
When the diameter of the crystal bar is 308mm, the MLCS system can normally capture the reflection of the bottom of the quartz pin on the melt liquid surface, and when the diameter of the crystal bar is larger than 312mm, the reflection of the bottom of the quartz pin on the melt liquid surface is blocked by the shadow of the crystal bar, as shown in FIG. 1, so that the MLCS system cannot normally capture complete reflection information of the quartz pin, the accuracy of calculating the melt distance is reduced, and the quality of the crystal bar is finally influenced.
In view of the above technical problems, the present embodiment provides a melt gap control structure applied to a single crystal rod growing apparatus, and referring to fig. 2, the melt gap control structure includes a quartz piece disposed at one end of a guide cylinder 1 close to a melt, the quartz piece includes an L-shaped main body 2, the L-shaped main body 2 includes a first connecting arm 21 connected to the guide cylinder 1 and a second connecting arm 22 vertically connected to the first connecting arm 21;
the quartz piece further comprises a first L-shaped branch 3 connected with the L-shaped main body 2, the first L-shaped branch 3 is positioned on one side, away from the single crystal rod 10, of the L-shaped main body 2, and comprises a third connecting arm 31 vertically connected with the second connecting arm 22 and a fourth connecting arm 32 vertically connected with the third connecting arm 31, and the fourth connecting arm 32 is parallel to the second connecting arm 22.
The first L-shaped branch 3 is arranged on the basis of the L-shaped main body 2, the distance between the first L-shaped branch 3 and the single crystal rod 10 is larger than the distance between the L-shaped main body 2 and the single crystal rod 10, even if the diameter of the single crystal rod 10 reaches 312-315 mm, the reflection of the bottom of the first L-shaped branch 3 on the liquid level of the molten liquid is not influenced, and the MLCS system is favorable for accurately controlling the distance between the molten liquids. In fig. 2, the solution distance may be obtained by the distance between the circle on the first L-shaped branch 3 and the reflection on the liquid surface of the melt 20 (the circle on the melt 20 is the reflection of the circle on the first L-shaped branch 3).
In the present embodiment, the first connecting arm 21 includes a connecting portion 5 for connecting with the guide cylinder 1, and the connecting portion 5 has a polygonal structure.
In the related art, a quartz pin is inserted into a circular hole reserved at the bottom of the guide shell 1. The head of the quartz pin is of a round end structure corresponding to the round hole, a fixing device is not arranged between the quartz pin and the guide cylinder 1, and in order to protect thermal field components, argon gas with high speed is arranged in the crystal growing furnace from top to bottom, so that the quartz pin shakes very violently and is easy to incline, the MLCS system is caught to cast shadow to generate adverse effect, and melt spacing control is finally influenced. In this embodiment, set up polygonized structure's connecting portion 5, avoid rocking of quartz spare, prevent the slope of quartz spare, improve the melt interval and measure the accuracy.
Referring to fig. 3, the connection portion 5 is exemplarily a rectangular parallelepiped structure in the present embodiment.
Referring to fig. 4, the connecting portion 5 is a pyramid structure in the present embodiment.
In order to prevent the problem that the quartz piece is inclined due to unbalance caused by the arrangement of the first L-shaped branch 3, in the embodiment, the quartz piece further comprises a second L-shaped branch 4 connected to the L-shaped main body 2, the second L-shaped branch 4 is located on one side of the L-shaped main body 2 close to the single crystal rod 10, and comprises a fifth connecting arm 41 vertically connected to the second connecting arm 22, and a sixth connecting arm 42 vertically connected to the fifth connecting arm 41, and the sixth connecting arm 42 is arranged in parallel to the second connecting arm 22.
In this embodiment, for example, the first L-shaped branch 3 and the second L-shaped branch 4 are symmetrically disposed on two sides of the second connecting arm 22, so as to effectively ensure balance of the quartz component, i.e., ensure that the second connecting arm 22, the fourth connecting arm 32 and the sixth connecting arm 42 are disposed perpendicular to the melt level, thereby facilitating measurement of the melt distance.
In this embodiment, the axial center line of the fourth connecting arm 32, the axial center line of the second connecting arm 22, the axial center line of the sixth connecting arm 42 and the axial center line of the single crystal rod 10 are exemplarily located on the same plane.
By adopting the scheme, the distance between the fourth connecting arm 32 and the single crystal rod 10 is the largest, the reflection of the fourth connecting arm 32 on the liquid level of the molten liquid is effectively prevented from being covered by the single crystal rod 10, and the accuracy of the measurement of the distance between the molten liquids is improved.
The embodiment of the utility model also provides a single crystal rod 10 growing device which comprises the molten liquid interval control structure.
Fig. 5 shows a schematic structural diagram of a draft tube 1, in this embodiment, a connection portion 5 of the L-shaped main body 2, which is used for being connected with the draft tube 1, is a multi-deformation structure, and a connection hole 11 on the draft tube 1, which is matched with the connection portion 5, is a shape corresponding to the polygonal structure, for example, the connection portion 5 is a rectangular structure, the section of the connection hole 11 is rectangular, the connection portion 5 is a pyramid structure, and if it is a three-sided pyramid, the section of the connection hole 11 is triangular.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the utility model as defined by the appended claims.
Claims (8)
1. A molten liquid interval control structure is applied to a single crystal rod growing device and is characterized in that the single crystal rod growing device comprises a guide cylinder, the guide cylinder is sleeved outside a single crystal rod, the molten liquid interval control structure comprises a quartz piece arranged at one end, close to molten liquid, of the guide cylinder, the quartz piece comprises an L-shaped main body, and the L-shaped main body comprises a first connecting arm connected with the guide cylinder and a second connecting arm vertically connected with the first connecting arm;
quartz component still include with the first L shape branch that L shape main part is connected, first L shape branch is located one side that single crystal stick was kept away from to L shape main part, include with the third linking arm of second linking arm vertical connection, and with the fourth linking arm of third linking arm vertical connection, the fourth linking arm with second linking arm parallel arrangement.
2. A molten liquid spacing control structure as claimed in claim 1, wherein the first connecting arm includes a connecting portion for connecting with a guide shell, and the connecting portion has a polygonal structure.
3. A molten metal spacing control structure as claimed in claim 2, wherein said connecting portion is a rectangular parallelepiped structure.
4. A molten metal spacing control structure as claimed in claim 2, wherein said connecting portion is a pyramid structure.
5. A molten liquid spacing control structure according to claim 1, wherein said quartz piece further comprises a second L-shaped branch connected to said L-shaped main body, said second L-shaped branch being located on a side of said L-shaped main body adjacent to the single crystal rod, and comprising a fifth connecting arm perpendicularly connected to said second connecting arm, and a sixth connecting arm perpendicularly connected to said fifth connecting arm, said sixth connecting arm being disposed in parallel with said second connecting arm.
6. The molten metal spacing control structure according to claim 5, wherein the first L-shaped branch and the second L-shaped branch are symmetrically arranged on two sides of the second connecting arm.
7. A molten liquid spacing control structure according to claim 5, wherein an axial centerline of said fourth connecting arm, an axial centerline of said second connecting arm, an axial centerline of said sixth connecting arm, and an axial centerline of a single crystal rod are located on the same plane.
8. A single crystal rod growing apparatus comprising the molten metal spacing control structure according to any one of claims 1 to 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120553828.5U CN215481422U (en) | 2021-03-17 | 2021-03-17 | Molten liquid interval control structure and single crystal rod growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120553828.5U CN215481422U (en) | 2021-03-17 | 2021-03-17 | Molten liquid interval control structure and single crystal rod growth device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN215481422U true CN215481422U (en) | 2022-01-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120553828.5U Active CN215481422U (en) | 2021-03-17 | 2021-03-17 | Molten liquid interval control structure and single crystal rod growth device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN215481422U (en) |
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2021
- 2021-03-17 CN CN202120553828.5U patent/CN215481422U/en active Active
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220627 Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Patentee after: Xi'an yisiwei Material Technology Co.,Ltd. Patentee after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: Room 1323, block a, city gate, No.1 Jinye Road, high tech Zone, Xi'an, Shaanxi 710065 Patentee before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Patentee before: Xi'an yisiwei Material Technology Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Patentee after: Xi'an Yisiwei Material Technology Co.,Ltd. Patentee after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Patentee before: Xi'an yisiwei Material Technology Co.,Ltd. Patentee before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |
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| CP01 | Change in the name or title of a patent holder |