CN215418104U

CN215418104U - Wafer warpage testing arrangement

Info

Publication number: CN215418104U
Application number: CN202121857867.0U
Authority: CN
Inventors: 徐琳; 杜强强; 沈振华
Original assignee: Suzhou Nanowin Science And Technology Co ltd
Current assignee: Suzhou Nanowin Science And Technology Co ltd
Priority date: 2021-08-10
Filing date: 2021-08-10
Publication date: 2022-01-04
Anticipated expiration: 2031-08-10

Abstract

The utility model belongs to the technical field of semiconductor material manufacturing. The utility model discloses a wafer warpage testing device, which comprises a wafer supporting mechanism, a measuring device and a base; the wafer supporting mechanism and the measuring device are arranged on the base; a groove is formed in the wafer supporting mechanism and used for accommodating a measuring mechanism of the measuring device; the measuring meter is arranged around the wafer supporting mechanism. The wafer warpage testing device can be used for rapidly detecting the warpage of the wafer, and the wafer warpage direction and the corresponding warpage degree can be quantized within 2 minutes; the wafer warpage testing device has a simple structure, does not need to adopt a complex ultrasonic or optical sensor, does not need to perform complex data analysis work, and can reduce the detection cost and improve the detection efficiency.

Description

Wafer warpage testing arrangement

Technical Field

The utility model relates to the technical field of semiconductor material manufacturing, in particular to a wafer warpage testing device.

Background

In the gallium nitride epitaxial growth process, the gallium nitride wafer is often warped due to stress, it is very necessary to rapidly quantify the warping degree and the warping direction of the wafer in the batch production process, the subsequent production can adjust the production process in real time according to quantified parameters, the former process can adjust the production process, and the latter process can change the processing process.

In the prior art, XRD equipment is generally adopted for testing the warpage degree of a wafer obtained in gallium nitride epitaxial growth, but the XRD equipment has the problems of high cost, relatively complex testing procedures, long testing time, low testing efficiency and the like, cannot adapt to warpage testing and process adjustment in fast-paced mass production operation, and is only suitable for warpage testing in an early-stage technology research and development stage.

In addition, corresponding warpage test methods also exist for similar wafers.

For example, GB/T31352-.

For example, chinese patent publication No. CN110400760A discloses a method and system for testing warpage of a semiconductor device in 2019, 11/1, which uses a series of optical devices to test warpage of the semiconductor device in a non-contact manner, and has a higher degree of automation, but the method and system also have the problems of complicated equipment and higher cost, and can be applied to the scenario involved in the present invention.

Similarly, chinese patent publication No. CN110739246A discloses a method for measuring warpage of a wafer in 31/1/2020, comprising the steps of: the method comprises the steps of firstly obtaining reference dot matrix image data, then obtaining measured dot matrix image data, finally drawing a reference wafer edge line outline by analyzing and calculating the reference dot matrix image data through a control terminal, drawing the measured wafer edge line outline by analyzing and calculating the measured dot matrix image data through the control terminal, and calculating the offset of the measured wafer edge line outline relative to the reference wafer edge line outline to obtain the warping value of a wafer so as to analyze and judge the integral shape of the wafer edge. After the technical scheme is adopted, the marginal line of the chip is acquired by adopting an image mode for calculation, so that the mechanism construction cost of the laser beam can be saved, and meanwhile, the CCD camera can be used with the appearance inspection at the same time, so that the cost of the inspection and measurement machine can be reduced, and the requirement of the industry can be better met; the stacked wafer appearance can be rapidly detected, and the detection efficiency is improved by more than 30%; chinese patent publication No. CN207395684U discloses a contactless wafer thickness measuring instrument in 2017, 11/7, which comprises a control box and a display screen mounted at the rear of a work table, a fixing arm and an ultrasonic detection probe mounted at the front end of the control box, a wafer tray mounted in the middle of the work table, a hollow ring at the center of the wafer tray, a wafer positioning head mounted on the upper opening edge of the hollow ring, a wafer supporting head mounted on the inner side surface of the hollow ring, an ultrasonic signal reflecting head mounted on the work table inside the hollow ring, two mutually parallel slideways with the same height mounted on the work table, a sliding groove designed on the wafer tray, and a sliding groove sleeved on the slideways. By adopting the technical scheme, the wafer is placed on the wafer supporting head, is fixed by the wafer fixing head, and slides the wafer tray on the slide way, so that the thickness of the wafer at each point on a straight line track on the wafer can be detected, the wafer is manually placed at one time, and the thickness of the wafer on two crossed lines can be detected by sliding once again, thereby calculating indexes such as average thickness, warping degree, bending degree and the like of the wafer; both methods use non-contact testing methods, but both methods involve more complex devices and also more complex data analysis methods, and although more accurate testing accuracy is possible, they are not suitable for the rapid detection of wafer warpage according to the present invention, and are also more costly.

SUMMERY OF THE UTILITY MODEL

In order to solve the problems and achieve the purpose of high detection efficiency and meeting the process adjustment requirements in fast-paced mass production, the utility model provides a wafer warpage testing device.

In order to achieve the purpose, the technical scheme adopted by the utility model is as follows:

a wafer warp testing device, the wafer warp testing device includes: a wafer supporting mechanism for supporting a wafer to be tested; a plurality of measuring devices for measuring the warpage of a wafer to be tested, each of the measuring devices comprising a measuring mechanism for contacting the wafer to be tested and a dial for reading; a pedestal for carrying the wafer support mechanism and the measuring device; the plurality of measuring devices are arranged on the base around the wafer bearing mechanism; the wafer supporting mechanism is provided with grooves corresponding to the number of the measuring devices, and the measuring mechanism of each measuring device is arranged in the corresponding groove and at least partially exposed to be in contact with a wafer to be tested.

Preferably, the wafer warpage testing apparatus further includes: and the calibration module is used for calibrating the measuring device and enabling the wafer to be tested to be close to the wafer sample support of the wafer bearing mechanism.

Preferably, the wafer sample holder is provided with an angle mark for marking the warping direction of the wafer to be tested.

The calibration module is used for calibrating the wafer warpage testing device before testing, and mainly calibrates a measuring mechanism of a measuring device to ensure the accuracy of the testing; the wafer sample support has two functions, one is that the wafer to be tested contains a sapphire substrate layer under normal conditions, the thin weight of the wafer to be tested is light, the interaction between the wafer to be tested and the wafer supporting mechanism is not enough to flatten the wafer to be tested, good measurement is difficult to realize, and the measurement result is influenced.

Preferably, the base is provided with a wafer support mechanism mounting surface and a measuring device mounting surface, the measuring device mounting surface is inclined gradually downward from the center of the base to the edge of the base, and the wafer support mechanism mounting surface is horizontally arranged.

The wafer supporting mechanism is horizontally arranged on the mounting surface, so that the wafer to be tested can be positioned at a horizontal position when the warpage degree is tested, and the warpage degree of the wafer to be tested can be better detected; the mounting surface of the measuring device is obliquely arranged, and the reading dial plate of the measuring device is mainly in an oblique position, so that the reading is convenient and accurate; meanwhile, the inclination of the measuring device is more convenient to assemble, disassemble and adjust.

Preferably, the wafer support mechanism is provided on the wafer support mechanism mounting surface, and the measuring device is provided on the measuring device mounting surface.

Preferably, at least three of the measuring devices are provided in the wafer warp testing device.

Preferably, a test head is arranged at the end part of the measuring mechanism, and the test head is linearly arranged.

Preferably, the measuring device is arranged in a T-shape around the wafer support mechanism.

Preferably, the test head is disposed in the groove, and the test head is partially exposed out of the groove to contact with a wafer to be tested.

The test head is a little higher than the upper surface of wafer bearing mechanism, and the wafer that awaits measuring is adhered to and is held in the palm the lower surface back along with the wafer sample and place on wafer bearing mechanism for the test head of measuring mechanism tip is pushed down, and shows different readings on measuring device, according to the difference of reading on all measuring device, can judge the degree and the direction of warpage, and then obtains the wafer warpage's accurate condition.

Preferably, the upper surface of the wafer support mechanism is a horizontal surface.

The wafer supporting mechanism has the advantages that the upper surface level of the wafer supporting mechanism can prevent the wafer to be tested on the wafer supporting mechanism from being placed horizontally, so that the warping degree can be better detected, and the measurement error caused by the fact that the wafer to be tested is not placed horizontally can be avoided.

Therefore, the utility model has the following beneficial effects: the wafer warpage testing device can be used for rapidly detecting the warpage of the wafer, and the wafer warpage direction and the corresponding warpage degree can be quantized within 2 minutes; the wafer warping testing device is simple in structure and low in cost, does not need to adopt a complex ultrasonic or optical sensor, does not need to perform complex data analysis work, and can reduce the detection cost and improve the detection efficiency.

Drawings

FIG. 1 is a schematic perspective view of a wafer warpage testing apparatus according to the present invention;

FIG. 2 is a schematic top view of a wafer warpage testing apparatus according to the present invention;

FIG. 3 is a schematic perspective view of a calibration module in the wafer warpage testing apparatus according to the present invention;

FIG. 4 is a schematic front view of a calibration module of the wafer warp testing apparatus according to the present invention;

FIG. 5 is a schematic front view of a wafer sample holder in the wafer warpage testing apparatus according to the present invention;

FIG. 6 is a schematic top view of a wafer sample holder in the wafer warpage testing apparatus of the present invention;

in the figure: the device comprises a base 1, a measuring device mounting surface 11, a wafer supporting mechanism mounting surface 12, a lever micrometer table 2, a measuring rod 21, a testing head 22, a wafer supporting mechanism 3, a groove 31, a calibration module 4 and a wafer sample support 5.

Detailed Description

The technical solution of the present invention will be further described with reference to the following embodiments.

It is to be understood that the described embodiments are merely a few embodiments of the utility model, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

It will be understood by those skilled in the art that in the present disclosure, the terms "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in an orientation or positional relationship indicated in the drawings for ease of description and simplicity of description, and do not indicate or imply that the referenced devices or components must be constructed and operated in a particular orientation and thus are not to be considered limiting.

Example 1

As shown in fig. 1-2, a wafer warpage testing device, a base 1 is provided with three obliquely arranged measuring device mounting surfaces 11, the three measuring device mounting surfaces are distributed in a T shape, a horizontally arranged wafer supporting mechanism mounting surface 12 is arranged in the middle of the three measuring device mounting surfaces, measuring devices are arranged on the three measuring device mounting surfaces 11, the measuring devices select a lever micrometer table 2, and a wafer supporting mechanism 3 is arranged on the wafer supporting mechanism mounting surface 12; the wafer supporting mechanism 3 is provided with a groove 31 corresponding to the position of the lever micrometer meter, the measuring mechanism is correspondingly provided with a measuring rod of the lever micrometer meter, the measuring rod 21 of the lever micrometer meter is arranged in the groove, the end part of the measuring rod is provided with a testing head 22, the position of the testing head is slightly higher than the upper surface of the wafer supporting mechanism 3, and the arrangement of the groove 31 in the wafer supporting mechanism enables the three lever micrometer meter testing heads 22 to be positioned on a straight line; the wafer warping testing device also comprises an auxiliary testing device, specifically a calibration module 4 and a wafer sample holder 5; 3-4, the calibration module 4 has substantially horizontal upper and lower surfaces for horizontal calibration of the position of the lever micrometer test head 22 before the warp test; as shown in fig. 5-6, the upper surface of the wafer sample holder is provided with angle scale marks, and the lower surface is a completely horizontal surface.

When the device is used specifically, the calibration module 4 is firstly used for calibrating the test heads 22 of the three lever micrometers, then the wafer to be tested is adhered to the lower surface of the wafer sample support 5, then the wafer sample support and the wafer to be tested are placed on the wafer supporting mechanism 3 together, and the corresponding readings of the three lever micrometers 2 are read and recorded; rotating the angle of the wafer sample holder 5, reading corresponding readings of the three lever micrometers 2 again and recording, and recording the rotating angle; measuring for multiple times in this way, and recording corresponding data; and finally, judging the warping direction and the warping degree according to the recorded data, and providing a corresponding basis for adjustment of a subsequent production process.

It is understood that the terms "a" and "an" should be interpreted as meaning that a number of one element or element is one in one embodiment, while a number of other elements is one in another embodiment, and the terms "a" and "an" should not be interpreted as limiting the number.

Although terms are used more often herein, the possibility of using other terms is not excluded. These terms are used merely to more conveniently describe and explain the nature of the present invention; they are to be construed as being without limitation to any additional limitations that may be imposed by the spirit of the present invention.

It will be understood that modifications and variations can be made by persons skilled in the art in light of the above teachings and all such modifications and variations are intended to be included within the scope of the utility model as defined in the appended claims.

Claims

1. A wafer warpage testing arrangement which characterized in that:

the wafer warpage testing arrangement includes:

a wafer supporting mechanism for supporting a wafer to be tested;

a plurality of measuring devices for measuring the warpage of a wafer to be tested, each of the measuring devices comprising a measuring mechanism for contacting the wafer to be tested and a dial for reading;

a pedestal for carrying the wafer support mechanism and the measuring device;

the plurality of measuring devices are arranged on the base around the wafer bearing mechanism;

the wafer supporting mechanism is provided with grooves corresponding to the number of the measuring devices, and the measuring mechanism of each measuring device is arranged in the corresponding groove and at least partially exposed to be in contact with a wafer to be tested.

2. A wafer warp test apparatus as claimed in claim 1, wherein:

the wafer warpage testing arrangement still includes:

a calibration module for calibrating the measurement device;

and the wafer sample support is used for enabling the wafer to be tested to be close to the wafer bearing mechanism.

3. A wafer warp test apparatus as claimed in claim 2, wherein:

and the wafer sample support is provided with an angle mark for marking the warping degree direction of the wafer to be tested.

4. A wafer warp test apparatus as claimed in claim 1, wherein:

the base is provided with a wafer supporting mechanism mounting surface and a measuring device mounting surface,

the measuring device mounting face has an inclined disposition gradually downward from the center of the base to the edge of the base,

the wafer supporting mechanism mounting surface is horizontally arranged.

5. The wafer warpage testing apparatus of claim 4, wherein:

the wafer supporting mechanism is arranged on the wafer supporting mechanism mounting surface, and the measuring device is arranged on the measuring device mounting surface.

6. A wafer warp test apparatus as claimed in claim 1, wherein:

at least three measuring devices are provided.

7. The wafer warpage testing apparatus of claim 6, wherein:

the measuring device is arranged around the wafer supporting mechanism in a T shape.

8. A wafer warpage testing arrangement according to claim 6 or 7, wherein:

the end of the measuring mechanism is provided with a testing head which is arranged linearly.

9. The wafer warpage testing apparatus of claim 8, wherein:

the test head is arranged in the groove, and the part of the test head is exposed out of the groove to be contacted with a wafer to be tested.

10. A wafer warp test apparatus as claimed in claim 1, wherein:

the upper surface of the wafer supporting mechanism is a horizontal plane.