CN215404647U - Single crystal furnace feeding device - Google Patents
Single crystal furnace feeding device Download PDFInfo
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- CN215404647U CN215404647U CN202121307984.XU CN202121307984U CN215404647U CN 215404647 U CN215404647 U CN 215404647U CN 202121307984 U CN202121307984 U CN 202121307984U CN 215404647 U CN215404647 U CN 215404647U
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Abstract
The utility model discloses a single crystal furnace feeding device, which comprises a furnace barrel, a furnace cover and a feeding pipe, wherein the furnace barrel is arranged in the furnace barrel; the furnace cylinder and the furnace cover jointly form an accommodating space; a charging opening is arranged on the furnace cover or the furnace cylinder; the filling tube includes: the device comprises a fixed plate, an upper feeding pipe, a lower feeding pipe and a baffle ring; the fixed plate is arranged at the feeding port; the upper feeding pipe is connected with the fixed plate, and the upper end part of the upper feeding pipe is provided with a funnel-shaped bell mouth; the lower feeding pipe comprises a first section and a second section which are connected; the inner diameter of the first section is larger than the outer diameter of the upper feeding pipe, and the first section is wrapped outside the upper feeding pipe and forms a sleeve structure together with the upper feeding pipe; the pipe diameter of the second section is the same as that of the upper feeding pipe; the baffle ring covers the end part of the first section, the diameter of an inner hole of the baffle ring is larger than the outer diameter of the upper feeding pipe, and the outer diameter of the baffle ring is larger than the outer diameter of the lower feeding pipe. The utility model has little influence on the growth of the single crystal, can realize the simultaneous use of the granular silicon and the circulating broken silicon, and greatly reduces the production cost.
Description
Technical Field
The utility model belongs to the technical field of silicon material preparation, and particularly relates to a single crystal furnace feeding device.
Background
The single crystal furnace is one of the important devices for producing the crystalline silicon solar energy, and in the production process of single crystal products, the process of pulling a plurality of single crystal rod products by using a quartz crucible and adopting multiple feeding has started to be applied in large scale. The multiple charging process in the prior art is mainly divided into two types: one is a mode of hoisting polycrystalline silicon materials from an auxiliary chamber of a single crystal furnace by adopting a circular quartz glass feeding cylinder and adding the polycrystalline silicon materials into a quartz crucible; the other method is a mode of adding granular silicon or crushed silicon materials into the single crystal furnace by adopting external feeding equipment through designing a feeding pipe in the single crystal furnace.
As shown in fig. 1, the feeding tube of the existing single crystal furnace production equipment mainly comprises a furnace cover 1, a main furnace barrel 2, an outer draft tube 3, an inner draft tube 4, (the outer draft tube 3 and the inner draft tube 4 are assembled into a whole to form a "draft tube assembly") heater 5, a heat preservation layer 6, a heat preservation tube 7, a draft tube lifting device 9, a draft tube support ring 8, a feeding tube 20, a feeding port 21, a gate valve 22 and the like, because the feeding tube 20 is designed integrally, the draft tube assembly cannot be lifted, so that the feeding tube can not be compatible with the circular quartz tube feeder, the problem that both granular silicon and circulating broken silicon can not be used simultaneously can not be realized, and the cost reduction is not favorable.
SUMMERY OF THE UTILITY MODEL
Aiming at the problems, the utility model provides the single crystal furnace feeding device which has small influence on the growth of single crystal crystals, can realize simultaneous use of granular silicon and circulating broken silicon, and greatly reduces the production cost.
In order to achieve the technical purpose and achieve the technical effects, the utility model is realized by the following technical scheme:
a single crystal furnace feeding device comprises a furnace cylinder, a furnace cover and a feeding pipe; the furnace cylinder and the furnace cover together form an accommodating space; a charging opening is arranged on the furnace cover or the furnace cylinder; the filling tube includes:
the fixing plate is arranged at the feeding port;
the upper feeding pipe is connected with the fixed plate, and the upper end part of the upper feeding pipe is provided with a funnel-shaped bell mouth;
a lower feed pipe comprising a first section and a second section connected; the inner diameter of the first section is larger than the outer diameter of the upper feeding pipe, the first section is wrapped outside the upper feeding pipe, and a sleeve structure is formed by the first section and the upper feeding pipe; the pipe diameter of the second section is the same as that of the upper feeding pipe;
and the baffle ring covers the end part of the first section far away from the second section, the diameter of an inner hole of the baffle ring is larger than the outer diameter of the upper feeding pipe, and the outer diameter of the baffle ring is larger than the outer diameter of the lower feeding pipe.
Optionally, the first section of the lower feed pipe is linear; the second section of the lower feeding pipe is of a fold line shape.
Optionally, the inner diameter of the first section is 10-20mm larger than the outer diameter of the upper feed pipe.
Optionally, the length of the first section is 100-200 mm.
Optionally, the diameter of the inner hole of the baffle ring is 1-2mm larger than the outer diameter of the upper feeding pipe, and the outer diameter of the baffle ring is 20-30mm larger than the outer diameter of the lower feeding pipe.
Optionally, a gate valve is arranged at the feed inlet.
Optionally, the upper feeding pipe is located in the accommodating space, and a funnel-shaped bell mouth at the upper part of the upper feeding pipe is located at the feeding port; the fixed plate is provided with a through hole, and the parts of the upper feeding pipe except the funnel-shaped bell mouth all penetrate through the through hole.
Optionally, the single crystal furnace charging device further comprises, arranged in the furnace cylinder:
a crucible;
the heat-insulating layer is filled between the outer guide cylinder and the inner guide cylinder which are coaxially arranged to form a guide cylinder assembly body; the guide cylinder assembly is positioned above the crucible and is connected with the lower feeding pipe;
the guide cylinder lifting device is connected with the guide cylinder assembling body and drives the guide cylinder assembling body to move, and the upper feeding pipe and the lower feeding pipe always keep a sleeve structure in the moving process;
the heater is arranged outside the crucible;
and the heat preservation cylinder is arranged outside the crucible and the heater.
Optionally, an insulating layer is sleeved outside the insulating cylinder.
Optionally, a guide shell support ring is arranged on the guide shell assembly body, and the guide shell support ring is also erected on the heat preservation shell and used for suspending the guide shell assembly body above the crucible.
Optionally, the single crystal furnace feeding device further comprises a feeding cylinder movably connected with the furnace cover, and a part of the feeding cylinder penetrates through the furnace cover and extends into the inner guide cylinder to feed silicon into the crucible.
Compared with the prior art, the utility model has the beneficial effects that:
the utility model provides a single crystal furnace feeding device, and provides a novel feeding pipe, which can block convection of hot air flow in a thermal field in a production process, plays a great role in stabilizing the temperature in the thermal field, greatly reduces the influence on the growth of single crystal crystals, and is favorable for large-scale popularization and application.
In addition, the utility model can realize the simultaneous use of the granular silicon and the circulating crushed silicon, thereby greatly reducing the production cost.
Drawings
In order that the present disclosure may be more readily and clearly understood, reference is now made to the following detailed description of the present disclosure taken in conjunction with the accompanying drawings, in which:
FIG. 1 is a schematic view of a feed tube of a single crystal furnace production apparatus in the prior art;
FIG. 2 is one of the schematic structural diagrams of a charging device of a single crystal furnace according to an embodiment of the present invention;
FIG. 3 is a second schematic structural view of a charging device of a single crystal furnace according to an embodiment of the present invention;
FIG. 4(a) is a schematic view showing the position between the upper feeding pipe and the lower feeding pipe under normal conditions;
FIG. 4(b) is a schematic diagram showing the position between the upper feed pipe and the lower feed pipe when the lower feed pipe is positioned to the right;
FIG. 4(c) is a schematic view of the position between the upper feed pipe and the lower feed pipe when the lower feed pipe is deviated to the left;
wherein:
1-furnace cover, 2-furnace cylinder, 3-outer guide cylinder, 4-inner guide cylinder, 5-heater, 6-heat preservation layer, 7-heat preservation cylinder, 8-guide cylinder support ring, 9-guide cylinder lifting device, 10-crucible, 11-silicon liquid, 21-charging hole, 22-gate valve, 30-upper charging pipe, 31-baffle ring, 32-lower charging pipe, 33-fixing plate and 40-charging cylinder.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the utility model and do not limit the scope of the utility model.
In the description of the present patent, it is to be noted that the terms "upper", "lower", "left", "right", "horizontal", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of describing the present patent and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present patent.
In the description of the present patent application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art through specific situations.
The following detailed description of the principles of the utility model is provided in connection with the accompanying drawings.
As shown in fig. 2-3, the utility model provides a single crystal furnace feeding device, which comprises a furnace cylinder 2, a furnace cover 1, a feeding pipe, a crucible 10 arranged in the furnace cylinder 2, an outer guide cylinder 3, an inner guide cylinder 4, a guide cylinder lifting device 9, a heater 5 and a heat preservation cylinder 7;
the furnace cylinder 2 and the furnace cover 1 jointly form an accommodating space;
a feed inlet 21 is formed in the furnace cover 1 or the furnace barrel 2, and a gate valve 22 is arranged at the feed inlet 21;
the feeding pipe comprises a fixing plate 33, an upper feeding pipe 30, a lower feeding pipe 32 and a baffle ring 31;
the fixed plate 33 is arranged at the feeding port 21; in practical application, the fixing plate 33 can be made of, but not limited to, stainless steel, quartz glass, graphite, etc.;
the upper feeding pipe 30 is connected with the fixing plate 33, and the upper end part of the upper feeding pipe is provided with a funnel-shaped bell mouth; in practical application, the upper feeding tube 30 can be made of, but not limited to, quartz glass, graphite, silicon nitride, alumina, carbon-carbon composite material, and the like; the funnel-shaped bell mouth at the upper part of the upper feeding pipe 30 is positioned at the feeding opening 21; the fixed plate 33 is provided with a through hole, and the parts of the upper feeding pipe 30 except the funnel-shaped bell mouth all penetrate through the through hole;
the lower feed pipe 32 comprises a first section 321 and a second section 322 which are connected; the inner diameter of the first section 321 is larger than the outer diameter of the upper feed pipe 30, and the first section is wrapped outside the upper feed pipe 30 to form a sleeve structure together with the upper feed pipe 30; the pipe diameter of the second section 322 is the same as that of the upper feeding pipe 30, so as to ensure smooth flow of the silicon material during falling and feeding; in the actual use process, the inner diameter of the first section 321 is 10-20mm larger than the outer diameter of the upper feeding pipe 30; the length of the first section 321 is 100-200 mm; the first section of the lower feeding pipe 32 is linear; the second section 322 of the lower feeding pipe 32 is in a broken line shape;
the baffle ring 31 covers the end of the first section 321 far away from the second section 322, and has an inner hole with a diameter larger than the outer diameter of the upper feeding pipe 30 and an outer diameter larger than the outer diameter of the lower feeding pipe 32. In the actual use process, the diameter of the inner hole of the baffle ring 31 is 1-2mm larger than the outer diameter of the upper feeding pipe 30, and the outer diameter of the baffle ring is 20-30mm larger than the lower feeding pipe 32; the baffle ring 31 can move up and down along with the lower feeding pipe 32 to play a role in hot air flow sealing; the baffle ring 31 can be made of materials such as but not limited to quartz glass, graphite, silicon nitride, alumina, carbon-carbon composite material, and the like;
the outer guide cylinder 3 and the inner guide cylinder 4 are coaxially arranged, and a heat-insulating layer is filled between the outer guide cylinder and the inner guide cylinder to form a guide cylinder assembly, so that a temperature gradient can be formed, crystal growth is facilitated, and power consumption is reduced; the lower feeding pipe 32 is arranged at the upper end of the outer guide cylinder 3; the guide cylinder assembly is positioned above the crucible 10 and is connected with the lower feeding pipe 32; in the actual use process, the outer guide cylinder 3 and the inner guide cylinder 4 are usually assembled into a whole by a mechanical method; the guide shell assembly body is provided with a guide shell support ring 8, and the guide shell support ring 8 is also erected on the heat-insulating shell 7 and used for hanging the guide shell assembly body above the crucible 10;
the guide shell lifting device 9 is connected with the guide shell assembling body to drive the guide shell assembling body to move, and in the moving process, the upper feeding pipe 30 and the lower feeding pipe 32 always keep a sleeve structure, namely the upper end of the lower feeding pipe 32 is higher than the lower end of the upper feeding pipe 30 by a certain distance when the guide shell assembling body is placed at the lowest position, so that the upper feeding pipe 30 can be sleeved with the lower feeding pipe 32; the draft tube lifting device 9 drives the draft tube assembly to lift and descend in the vertical direction for a certain stroke, and because the draft tube assembly has certain shaking and deviation in the lifting process, the inner diameter of the first section of the lower feeding tube 32 is 10-20mm larger than the outer diameter of the upper feeding tube 30, so that a sleeve structure is formed, the upper feeding tube 32 and the lower feeding tube 32 can be prevented from being damaged in the lifting and descending processes (the lower feeding tube 32 is inclined to the right or left), and the reference is made to fig. 4(a) -4 (c).
The heater 5 is arranged outside the crucible 10;
the heat preservation cylinder 7 is arranged on the outer side of the crucible 10 and the heater 5, and the heat preservation layer 6 is sleeved outside the heat preservation cylinder 7.
The operation principle of the single crystal furnace charging device is explained in detail below with reference to the mechanism of the single crystal furnace charging device.
During production, a certain weight of silicon material is pre-loaded in a crucible 10 (a quartz crucible can be selected), a single crystal furnace starts to operate, heating is started after vacuumizing and gas replacement, after a heater 5 is heated to high temperature, the lower parts of an outer guide cylinder 3 and a guide cylinder support ring 8 are positioned in a high-temperature area of a thermal field, the upper parts of the outer guide cylinder 3 and the guide cylinder support ring 8 are positioned in a low-temperature area, hot airflow can flow from a lower feeding pipe 32 to the upper surface due to large temperature difference, at the moment, a blocking ring 31 can block hot airflow to form convection, the effect on temperature stability in the thermal field is large, and the influence on growth of single crystal crystals is greatly reduced.
The silicon liquid 11 is melted and enters the process of pulling a monocrystal product, the silicon liquid 11 in the crucible 10 can grow gradually into a monocrystal rod and is pulled out, and when the silicon liquid 11 is remained to a certain amount, a plurality of feeding operations can be carried out.
Before multiple feeding operations, the guide shell assembly is lifted upwards to a certain stroke (see fig. 3) by using the guide shell lifting device 9, the lower feeding pipe 32 and the baffle ring 31 can synchronously lift along with the guide shell assembly, and in this state, an external feeding device can be used for feeding materials from the gate valve 22, and the feeding mode of the traditional quartz feeding cylinder 40 is compatible;
external feeding device feeding mode: after the external feeding device is butted with the single crystal furnace, the gate valve 22 is opened, granular silicon or crushed silicon enters from the upper feeding pipe 30, passes through the lower feeding pipe 32 and then enters the crucible 10 to be melted together with the silicon liquid 11; after the proper weight of silicon charge is charged into the crucible 10, the gate valve 22 is closed and the charging device is removed from the single crystal furnace and the charging process is completed.
Further, the single crystal furnace feeding device further comprises a feeding cylinder 40, wherein a part of the feeding cylinder 40 penetrates through the furnace cover 1 and extends into the inner guide cylinder 4, and silicon materials are added into the crucible 10. The feeding cylinder 40 is movably connected with the furnace cover 1 and is arranged on the furnace cover 1 or taken away from the furnace cover 1 according to the requirement of the preparation process.
The utility model can also be compatible with the existing quartz charging cylinder mode for charging, and the specific implementation mode is as follows:
feeding mode of the quartz feeding cylinder 40: the silicon material is filled in the quartz feeding cylinder, the quartz feeding cylinder is hung into the single crystal furnace from the auxiliary chamber of the single crystal furnace, the silicon material is added into the crucible 10 from the inner part of the inner guide cylinder 4, and after the silicon material is fed to proper weight through repeated operation for many times, the feeding process is finished.
After the feeding is finished, the guide shell lifting device 9 is descended to the working position of the guide shell device body, and then the production process of the next crystal bar can be started.
The foregoing shows and describes the general principles and broad features of the present invention and advantages thereof. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the utility model as claimed. The scope of the utility model is defined by the appended claims and equivalents thereof.
Claims (10)
1. A single crystal furnace feeding device is characterized by comprising a furnace cylinder, a furnace cover and a feeding pipe; the furnace cylinder and the furnace cover together form an accommodating space; a charging opening is arranged on the furnace cover or the furnace cylinder; the filling tube includes:
the fixing plate is arranged at the feeding port;
the upper feeding pipe is connected with the fixed plate, and the upper end part of the upper feeding pipe is provided with a funnel-shaped bell mouth;
a lower feed pipe comprising a first section and a second section connected; the inner diameter of the first section is larger than the outer diameter of the upper feeding pipe, the first section is wrapped outside the upper feeding pipe, and a sleeve structure is formed by the first section and the upper feeding pipe; the pipe diameter of the second section is the same as that of the upper feeding pipe;
and the baffle ring covers the end part of the first section far away from the second section, the diameter of an inner hole of the baffle ring is larger than the outer diameter of the upper feeding pipe, and the outer diameter of the baffle ring is larger than the outer diameter of the lower feeding pipe.
2. The charging device of the single crystal furnace according to claim 1, characterized in that: the first section of the lower feeding pipe is linear; the second section of the lower feeding pipe is of a fold line shape.
3. The charging device of the single crystal furnace according to claim 1, characterized in that: the inner diameter of the first section is 10-20mm larger than the outer diameter of the upper feeding pipe; the length of the first section is 100-200 mm.
4. The charging device of the single crystal furnace according to claim 1, characterized in that: the diameter of an inner hole of the baffle ring is 1-2mm larger than the outer diameter of the upper feeding pipe, and the outer diameter of the baffle ring is 20-30mm larger than the outer diameter of the lower feeding pipe.
5. The charging device of a single crystal furnace according to claim 1, wherein a gate valve is arranged at the charging port.
6. The charging device of a single crystal furnace according to claim 1, wherein the upper feeding pipe is positioned in the accommodating space, and a funnel-shaped bell mouth at the upper part of the upper feeding pipe is positioned at the charging port; the fixed plate is provided with a through hole, and the parts of the upper feeding pipe except the funnel-shaped bell mouth all penetrate through the through hole.
7. The single crystal furnace charging device according to claim 1, further comprising, disposed within the furnace vessel:
a crucible;
the heat-insulating layer is filled between the outer guide cylinder and the inner guide cylinder which are coaxially arranged to form a guide cylinder assembly body; the guide cylinder assembly is positioned above the crucible and is connected with the lower feeding pipe;
the guide cylinder lifting device is connected with the guide cylinder assembling body and drives the guide cylinder assembling body to move, and the upper feeding pipe and the lower feeding pipe always keep a sleeve structure in the moving process;
the heater is arranged outside the crucible;
and the heat preservation cylinder is arranged outside the crucible and the heater.
8. The charging device of the single crystal furnace according to claim 7, characterized in that: and a heat-insulating layer is sleeved outside the heat-insulating cylinder.
9. The charging device of the single crystal furnace according to claim 7, characterized in that: the guide shell assembly is provided with a guide shell support ring, and the guide shell support ring is also erected on the heat-insulating shell and used for hanging the guide shell assembly above the crucible.
10. The charging device of the single crystal furnace according to claim 7, characterized in that: the single crystal furnace feeding device further comprises a feeding cylinder, the feeding cylinder is movably connected with the furnace cover, part of the feeding cylinder penetrates through the furnace cover and extends into the inner guide cylinder, and silicon materials are added into the crucible.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121307984.XU CN215404647U (en) | 2021-06-11 | 2021-06-11 | Single crystal furnace feeding device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121307984.XU CN215404647U (en) | 2021-06-11 | 2021-06-11 | Single crystal furnace feeding device |
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| CN215404647U true CN215404647U (en) | 2022-01-04 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023231520A1 (en) * | 2022-05-31 | 2023-12-07 | 隆基绿能科技股份有限公司 | Feeding device and crystal pulling device |
| TWI827440B (en) * | 2022-02-17 | 2023-12-21 | 大陸商中環領先半導體材料有限公司 | Feeding pipe, single crystal growth apparatus and feeding method thereof |
-
2021
- 2021-06-11 CN CN202121307984.XU patent/CN215404647U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI827440B (en) * | 2022-02-17 | 2023-12-21 | 大陸商中環領先半導體材料有限公司 | Feeding pipe, single crystal growth apparatus and feeding method thereof |
| WO2023231520A1 (en) * | 2022-05-31 | 2023-12-07 | 隆基绿能科技股份有限公司 | Feeding device and crystal pulling device |
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