CN215119466U

CN215119466U - Laminated busbar of high-voltage large-current SiC single tube

Info

Publication number: CN215119466U
Application number: CN202121142682.1U
Authority: CN
Inventors: 杨旺
Original assignee: Chongqing Jinkang Power New Energy Co Ltd
Current assignee: Chongqing Jinkang Power New Energy Co Ltd
Priority date: 2021-05-26
Filing date: 2021-05-26
Publication date: 2021-12-10
Anticipated expiration: 2031-05-26

Abstract

The utility model discloses a single tubular stromatolite of high-pressure heavy current SiC is female arranges, include: a drive plate; the SiC single tube is provided with a KS pole pin, a G pole pin, a D pole pin and an S pole pin, and the KS pole pin and the tail end of the G pole pin are welded with the driving plate; the laminated busbar body comprises a plurality of conducting layers, wherein insulating layers are fixedly attached between the conducting layers, each conducting layer is provided with a conducting layer pin, and each conducting layer pin is welded with one D pole pin or S pole pin. Compared with the prior art, the utility model discloses be fit for the single tube's of high-pressure heavy current SiC batch production, improve production efficiency, reduce manufacturing cost, and can cut the foot to the conducting layer stitch and handle, cut it short and reduce the return circuit inductance to the technical problem of the little welding difficulty of pad interval has been solved.

Description

Laminated busbar of high-voltage large-current SiC single tube

Technical Field

The utility model relates to a female technical field of arranging of stromatolite, especially a single-pipe stromatolite of high-pressure heavy current SiC is female arranges.

Background

In the field of new energy automobiles, the laminated bus bar is widely applied due to the advantages of low inductance, low impedance, good reliability, convenience in installation and the like.

If the power module of the motor controller of the new energy automobile adopts a single tube, the single tube is integrated and connected in parallel, and a laminated busbar is generally adopted. And novel high-voltage heavy current SiC single tube is based on the demand of high integration and low inductance, need to carry out low inductance processing to the female row of lamination. At present, no other scheme is available for the high-voltage SiC laminated busbar.

SUMMERY OF THE UTILITY MODEL

The utility model aims at providing a single tubular stromatolite of high-pressure heavy current SiC is female arranges to solve the technical problem among the prior art.

The utility model provides a single tubular stromatolite of high-pressure heavy current SiC is female arranges, include:

a drive plate;

the SiC single tube is provided with a KS pole pin, a G pole pin, a D pole pin and an S pole pin, and the KS pole pin and the G pole pin are welded with the driving plate;

the laminated busbar body comprises a plurality of conducting layers, wherein insulating layers are fixedly attached between the conducting layers, each conducting layer is provided with a conducting layer pin, and each conducting layer pin is welded with one D pole pin or S pole pin.

The laminated busbar of the high-voltage large-current SiC single tube preferably includes a laminated busbar positive electrode, a three-phase copper bar and a laminated busbar negative electrode.

The laminated busbar of the high-voltage large-current SiC single tube is preferably configured such that the D-pole pin or the S-pole pin is fixedly connected to the conductive layer pin by resistance welding.

In the laminated busbar of the single high-voltage and large-current SiC tube, preferably, the KS pole pin and the G pole pin are fixedly connected to the driving board by soldering.

The laminated busbar of the high-voltage large-current SiC single tube is preferably arranged such that the KS pole pin, the G pole pin, the D pole pin, the S pole pin, and the conductive layer pin are all away from the insulating layer.

In the laminated busbar of the high-voltage large-current SiC single tube, preferably, the welding end of the pin of the conductive layer is a stamped part.

In the laminated busbar of the high-voltage large-current SiC single tube, preferably, the lengths of the D-pole pin and the S-pole pin are smaller than the lengths of the KS-pole pin and the G-pole pin.

The laminated busbar of the high-voltage large-current SiC single tube is preferably formed by hot-pressing the conductive layer and the insulating layer into a whole.

The laminated busbar of the high-voltage large-current SiC single tube is characterized in that the conductive layer is formed by a single conductive layer.

The laminated busbar of the high-voltage large-current SiC single tube is characterized in that the bonding end of the pin of the conductive layer is perpendicular to the plane of the conductive layer.

Compared with the prior art, the utility model discloses be fit for the single tube' S of high-pressure heavy current SiC batch production, improve production efficiency, reduce manufacturing cost, and can cut the foot to D utmost point stitch, S utmost point stitch and conducting layer stitch and handle, cut it short and reduce the return circuit inductance to the technical problem of the pad welding difficulty that is too little has been solved.

Drawings

Fig. 1 is an isometric view of the present invention;

fig. 2 is a partially enlarged schematic view of the present invention;

fig. 3 is a side view of the present invention;

FIG. 4 is a system schematic of the present invention;

FIG. 5 is a schematic view of the bonding end structure of the D-pole pin or S-pole pin and the conductive layer pin.

Description of reference numerals:

1-a drive plate;

2-SiC single tube, 21-KS pole pin, 22-G pole pin, 23-D pole pin, 24-S pole pin, 25-upper bridge single tube and 26-lower bridge single tube;

3-a laminated busbar body, 31-a conducting layer pin and 311-a stamping part; 32-positive pole of laminated busbar, 33-three-phase copper bar, 34-negative pole of laminated busbar.

Detailed Description

Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below by referring to the drawings are exemplary only for explaining the present invention, and should not be construed as limiting the present invention.

As shown in fig. 1 to 5, an embodiment of the present invention provides a laminated busbar of high-voltage large-current SiC single tube, including:

a drive plate 1;

the SiC single tube 2 is arranged below the drive plate 1, a KS pole pin 21, a G pole pin 22, a D pole pin 23 and an S pole pin 24 are arranged on the SiC single tube 2, the KS pole pin 21 and the G pole pin 22 vertically extend upwards, preferably, the D pole pin and the S pole pin are subjected to pin shearing treatment, and the length of the D pole pin and the length of the G pole pin are smaller than that of the KS pole pin and that of the G pole pin.

The tail ends of the KS pole pin 21 and the G pole pin 22 are welded to the drive board 1, and in the embodiment, the KS pole pin 21 and the G pole pin 22 are fixedly connected to the drive board 1 through soldering;

the laminated busbar body 3 is arranged below the driving board 1 and comprises a plurality of conducting layers, an insulating layer is fixedly attached between the conducting layers, in the embodiment, the conducting layers and the insulating layer form a whole through hot pressing, each layer is provided with conducting layer pins 31, and each conducting layer pin 31 is correspondingly welded with a D pole pin 23 or an S pole pin 24. As a preferred technical solution of this embodiment, the conductive layer pins 31 are bent and extended upward, and the welding ends of the conductive layer pins 31 are perpendicular to the plane of the conductive layer.

In this embodiment, the multilayer conductive layer sequentially includes a laminated busbar anode 32, a three-phase copper bar 33, and a laminated busbar cathode 34, the SiC single tube 2 includes an upper bridge single tube 25 and a lower bridge single tube 26, as shown in fig. 4, and the electrical circuit is the laminated busbar anode 32 → the upper bridge single tube 25 → the three-phase copper bar 33 → the lower bridge single tube 26 → the laminated busbar cathode 34.

In the present embodiment, the D-pole pin 24, the S-pole pin 25, and the conductive layer pin 31 are trimmed to reduce the loop inductance, and the technical problem of difficult soldering due to too small bonding pads is solved, and the D-pole pin 24 and the S-pole pin 25 of the SiC single tube 2 and the conductive layer pin 31 of the laminated busbar body 3 are soldered under the driving board 1, preferably by a fixing method of resistance welding.

As a preferable technical solution of this embodiment, the KS pole pin 21, the G pole pin 22, the D pole pin 23, the S pole pin 24, and the conductive layer pin 31 are all far away from the insulating layer. Because KS utmost point stitch 21, G utmost point stitch 22, D utmost point stitch 23, S utmost point stitch 24 and conducting layer stitch 31 are all far away from the insulating layer distance, so welding operation can not produce the harm to the insulating layer, when guaranteeing product quality, improves production efficiency.

The laminated busbar body 3 is made thicker in consideration of heat, but this causes a problem that the temperature of the conductive layer pins 31 is not easily increased and heat dissipation is fast, and resistance welding is not easily performed. Therefore, the conductive layer pins 31 are partially punched, specifically, as shown in fig. 5, the welding ends of the conductive layer pins 31 include a main body and a punched part 311, the punched part 311 is subjected to pin cutting treatment, the length of the punched part 311 is shorter than that of the main body, the punched part 311 is subjected to punching treatment, and the part is welded with the conductive layer pins 31, the contact surface is small, and resistance welding is facilitated.

In the prior art, a pin of a conventional Si single tube laminated busbar is based on manufacturability, a large-current pin is extended to a driving plate 1, one-time welding is completed on the driving plate 1, the length of the pin is too long, the inductance is high, and the influence on a high-voltage SiC driving circuit is large.

In this embodiment, the conductive layer pins 31 of the laminated busbar body 3 are subjected to pin shearing within a structure allowable range, so that the length of the conductive layer pins 31 is reduced to the maximum, and the loop inductance is reduced. Therefore, the length of the punched part 311 is small, after the conductive layer pin 31 is cut short, the D-pole pin 23 or the S-pole pin 24 and the conductive layer pin 31 are resistance welded, and the KS-pole pin 21 and the G-pole pin 22 are soldered to the drive board 1, thereby solving the above problems.

As a preferred technical solution of this embodiment, the conductive layer pins 31 are bent and extended upward, and the welding ends of the conductive layer pins 31 are perpendicular to the plane of the conductive layer.

The structure, features and effects of the present invention have been described in detail above according to the embodiment shown in the drawings, and the above description is only the preferred embodiment of the present invention, but the present invention is not limited to the implementation scope shown in the drawings, and all changes made according to the idea of the present invention or equivalent embodiments modified to the same changes should be considered within the protection scope of the present invention when not exceeding the spirit covered by the description and drawings.

Claims

1. The utility model provides a female arranging of stromatolite of high-voltage heavy current SiC monotube which characterized in that includes:

a drive plate;

2. The laminated busbar of the high-voltage large-current SiC single tube according to claim 1, wherein: the multilayer conducting layer sequentially comprises a laminated busbar anode, a three-phase copper bar and a laminated busbar cathode.

3. The laminated busbar of the high-voltage large-current SiC single tube according to claim 1, wherein: and the D pole pin or the S pole pin is fixedly connected with the conductive layer pin through resistance welding.

4. The laminated busbar of the high-voltage large-current SiC single tube according to claim 1, wherein: KS utmost point stitch and G utmost point stitch with the drive plate passes through soldering fixed connection.

5. The laminated busbar of the high-voltage large-current SiC single tube according to claim 1, wherein: KS utmost point stitch, G utmost point stitch, D utmost point stitch, S utmost point stitch and the conducting layer stitch all keeps away from the insulating layer.

6. The laminated busbar of the high-voltage large-current SiC single tube according to claim 1, wherein: the welding end of the conductive layer pin is a stamping part.

7. The laminated busbar of the high-voltage large-current SiC single tube according to claim 1, wherein: the length of the D pole stitch and the S pole stitch is smaller than that of the KS pole stitch and the G pole stitch.

8. The laminated busbar of the high-voltage large-current SiC single tube according to claim 1, wherein: and the conductive layer and the insulating layer are integrated through hot-pressing.

9. The laminated busbar of the high-voltage large-current SiC single tube according to claim 1, wherein: the conducting layer pins are bent upwards and extend.

10. The laminated busbar of the high-voltage large-current SiC single tube according to claim 9, wherein: and the welding ends of the pins of the conducting layer are vertical to the plane of the conducting layer.