CN215050685U - Wafer tray assembly for MOCVD system and MOCVD system - Google Patents
Wafer tray assembly for MOCVD system and MOCVD system Download PDFInfo
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- CN215050685U CN215050685U CN202121303698.6U CN202121303698U CN215050685U CN 215050685 U CN215050685 U CN 215050685U CN 202121303698 U CN202121303698 U CN 202121303698U CN 215050685 U CN215050685 U CN 215050685U
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Abstract
The utility model provides a wafer tray subassembly and MOCVD system for MOCVD system, wafer tray subassembly includes wafer tray, auxiliary connection spare, heater block and back shaft, the wafer tray is located the top of auxiliary connection spare, and the wafer tray with auxiliary connection spare fixed connection; the bottom end of the auxiliary connecting piece is provided with a groove which is concave to the wafer tray, and the cross section area of the groove is gradually increased along with the increase of the distance away from the wafer tray; the top of the supporting shaft is provided with a convex part which is matched with the groove, so that the auxiliary connecting piece and the supporting shaft can synchronously rotate; the heating member is disposed at a bottom of the wafer tray and a circumferential outer side of the auxiliary connection member. The wafer tray assembly ensures that the temperature of the position where the wafer tray is connected with the supporting shaft is consistent with the temperature of the peripheral area of the wafer tray, and ensures the temperature uniformity of the wafer tray.
Description
Technical Field
The utility model relates to a semiconductor manufacturing technical field, concretely relates to wafer tray subassembly and MOCVD system for MOCVD system.
Background
The metal organic compound chemical vapor deposition is gradually used for manufacturing high-brightness LED chips due to the advantages of easy growth control, capability of growing materials with high purity, good large-area uniformity of epitaxial layers and the like. Some processes in the fabrication of semiconductor devices require that the wafer be carried on a wafer tray, and in an MOCVD (Metal Organic Chemical Vapor Deposition) chamber, a heating component is generally disposed in the reaction chamber to decompose the raw material gas and deposit the raw material gas on the surface of the wafer on the wafer tray, so as to ensure that the temperature of the reaction chamber can be rapidly raised to a temperature required for film growth.
In order to ensure the stability of the wafer process result, the existing MOCVD system needs to rotate at a high speed to homogenize the gas flow field, meanwhile, each part of the tray needs to be uniformly heated, and the temperature difference of different positions of the tray is generally required to be less than 1 ℃. However, in order to realize high-speed rotation of the tray, the tray is supported by a supporting shaft, so that a heating part cannot be arranged at the connecting part of the tray and the supporting shaft, and the connecting part of the wafer tray and the supporting shaft cannot be heated; the support shaft is generally made of metal, and absorbs the temperature of the central point of the tray, so that the central temperature of the tray is lower than the temperature of other parts of the wafer tray, and the process result of the wafer positioned right above the connecting position of the tray and the support shaft is different from that of the wafer positioned at other positions of the wafer tray. Therefore, it is an urgent technical problem to ensure that the temperature of the wafer tray at the position where the wafer tray is connected to the support shaft is consistent with the temperature of the peripheral area of the wafer tray, and to ensure the temperature uniformity of the wafer tray.
SUMMERY OF THE UTILITY MODEL
In view of the above, the present invention provides a wafer tray assembly for an MOCVD system and the MOCVD system, so as to solve one or more problems in the prior art.
According to one aspect of the present invention, a wafer tray assembly for an MOCVD system is disclosed, the wafer tray assembly including a wafer tray, an auxiliary connecting member, a heating member, and a support shaft,
the wafer tray is positioned at the top of the auxiliary connecting piece and is fixedly connected with the auxiliary connecting piece;
the bottom end of the auxiliary connecting piece is provided with a groove which is concave to the wafer tray, and the cross section area of the groove is gradually increased along with the increase of the distance away from the wafer tray;
the top of the supporting shaft is provided with a convex part which is matched with the groove, so that the auxiliary connecting piece and the supporting shaft can synchronously rotate;
the heating member is disposed at a bottom of the wafer tray and a circumferential outer side of the auxiliary connection member.
In some embodiments of the present invention, the top end surface of the protrusion has a predetermined distance from the bottom of the groove.
In some embodiments of the present invention, the cross-sectional area of the protrusion gradually increases with increasing distance away from the wafer tray.
In some embodiments of the present invention, the cross-section of the groove and the protrusion is a circular cross-section or a polygonal cross-section.
In some embodiments of the present invention, the supporting shaft has a channel from the top end surface of the protruding portion to the circumferential side wall of the shaft section of the supporting shaft located below the protruding portion.
In some embodiments of the present invention, the outer peripheral wall of the auxiliary connecting member is wavy or zigzag.
In some embodiments of the present invention, the heating member is a ring-shaped heating wire or a ring-shaped heating sheet.
In some embodiments of the invention, the auxiliary connection is located at an intermediate position of the wafer tray.
In some embodiments of the present invention, the wafer tray and the auxiliary connecting member are an integral structure.
According to the utility model discloses a wafer tray subassembly that is used for MOCVD system, wafer tray subassembly that is equipped with above arbitrary embodiment in the reaction chamber is still disclosed to MOCVD system, the system includes the reaction chamber.
By utilizing the wafer tray assembly for the MOCVD system and the MOCVD system of the present disclosure, at least the following advantages can be obtained:
this a wafer tray subassembly for MOCVD system, be connected through auxiliary connecting piece between its wafer tray and the back shaft, and realize being connected through recess and bellying cooperation between auxiliary connecting piece and the back shaft, the circumference outside of auxiliary connecting piece is equipped with the heater block in addition, thereby make wafer tray and back shaft hookup location department accessible be located the heater block in auxiliary connecting piece circumference outside and heat, and then guaranteed that the temperature of wafer tray and back shaft hookup location department keeps unanimous rather than the temperature of peripheral region basically, therefore guaranteed the temperature homogeneity of wafer tray.
In addition, the supporting shaft is also provided with a channel which penetrates from the top end face of the bulge part to the circumferential side wall of the shaft section of the supporting shaft, which is positioned below the bulge part, and the structure further reduces the heat conduction rate between the auxiliary connecting piece and the supporting shaft, so that the connection position of the wafer tray and the supporting shaft can be rapidly heated.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
It will be appreciated by those skilled in the art that the objects and advantages that can be achieved with the present invention are not limited to the details set forth above, and that these and other objects that can be achieved with the present invention will be more clearly understood from the following detailed description.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principles of the invention. The components in the figures are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the invention. For convenience in illustrating and describing some portions of the present invention, corresponding parts of the drawings may be exaggerated, i.e., may be larger, relative to other components in an exemplary device actually manufactured according to the present invention. In the drawings:
fig. 1 is a schematic structural diagram of a wafer tray assembly for an MOCVD system according to an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a wafer pallet assembly for an MOCVD system according to another embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the embodiments of the present invention are described in further detail below with reference to the accompanying drawings. The exemplary embodiments and descriptions of the present invention are provided to explain the present invention, but not to limit the present invention.
It should be noted that, in order to avoid obscuring the present invention with unnecessary details, only the structures and/or processing steps closely related to the solution according to the present invention are shown in the drawings, and other details not relevant to the present invention are omitted.
It should be emphasized that the term "comprises/comprising/comprises/having" when used herein, is taken to specify the presence of stated features, elements, steps or components, but does not preclude the presence or addition of one or more other features, elements, steps or components.
It should be noted that the terms of orientation and orientation used in the present specification are relative to the position and orientation shown in the drawings; the term "coupled" herein may mean not only directly coupled, but also indirectly coupled, in which case intermediates may be present, if not specifically stated. A direct connection is one in which two elements are connected without the aid of intermediate elements, and an indirect connection is one in which two elements are connected with the aid of other elements.
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the drawings, like reference characters designate the same or similar parts throughout the several views.
Fig. 1 is a schematic structural diagram of a wafer tray assembly for an MOCVD system according to an embodiment of the present invention, and as shown in fig. 1, the wafer tray assembly includes a wafer tray 10, an auxiliary connection member 20, a heating member, and a support shaft. The wafer tray 10 is used for carrying wafers, the auxiliary connecting member 20 is located between the wafer tray 10 and the supporting shaft for connecting the wafer tray 10 and the supporting shaft, and the heating member is used for heating the wafer tray 10 to ensure that the wafer tray 10 meets the temperature required for film growth. Illustratively, the wafer tray 10 is a circular tray on which wafers are placed during a particular fabrication process. It will be understood that the size and specific shape of the wafer tray 10 may be designed according to the number and size of wafers to be processed, for example, the wafer tray 10 may be a square tray and an irregularly shaped tray in addition to a circular tray.
The wafer tray 10 is specifically positioned on the top of the auxiliary connecting piece 20, and the wafer tray 10 is fixedly connected with the auxiliary connecting piece 20; the auxiliary connection member 20 may be a cylindrical structure as a whole, and the wafer tray 10 is disposed at the top end of the auxiliary connection member 20 having the cylindrical structure. The auxiliary connector 20 and the wafer tray 10 may be integrally or separately formed, and in the case of the separate structure, the wafer tray 10 and the auxiliary connector 20 may be further connected by a non-detachable connection method such as welding or bonding. When the wafer tray 10 and the auxiliary connecting member 20 are separate structures, in addition to the above, the wafer tray 10 and the auxiliary connecting member 20 may be detachably connected to each other; for example, the bottom of the wafer tray 10 may be provided with a blind hole, and the inner wall of the blind hole is provided with an internal thread, and at this time, the outer wall of the top end of the auxiliary connecting member 20 having a cylindrical structure may be provided with an external thread matching the internal thread of the blind hole, so that the threaded connection between the wafer tray 10 and the auxiliary connecting member 20 is achieved by the mutual engagement of the internal thread on the inner wall of the blind hole and the external thread on the outer wall of the auxiliary connecting member 20.
The auxiliary connection member 20 may have a square structure in addition to the cylindrical structure; at this time, the wafer tray 10 is positioned on the top end surface side of the auxiliary connection member 20 of the square structure. Similarly, the auxiliary connecting member 20 having a square structure and the wafer tray 10 may be an integral structure or a separate structure; when the structure is a split structure, a square blind hole with a shape similar to that of the auxiliary connecting piece 20 can be further formed in the bottom of the wafer tray 10, and the connection between the wafer tray 10 and the auxiliary connecting piece 20 is realized by extending the end of the square auxiliary connecting piece 20 into the square blind hole. In addition, in order to ensure that the wafer tray 10 rotates in synchronization with the support shaft, the size of the square blind hole may be identical to the outer size of the auxiliary link 20; so as to prevent a gap from being formed between the inner wall of the square blind hole of the wafer tray 10 and the outer wall of the auxiliary connector 20 in a connected state of the wafer tray 10 and the auxiliary connector 20. In addition, when the auxiliary connector 20 is detachably or non-detachably connected to the wafer tray 10, a high thermal conductivity between the top end surface of the auxiliary connector 20 and the wafer tray 10 should be ensured, that is, when the end of the auxiliary connector 20 is matched with the blind hole of the wafer tray 10, the top end surface of the auxiliary connector 20 and the bottom surface of the blind hole should be ensured to contact with each other, or a thermal interface filling material is disposed between the top end surface of the auxiliary connector 20 and the bottom surface of the blind hole.
The lower end of the auxiliary link 20 also has a groove 21 recessed toward the wafer tray 10, and the cross-sectional area of the groove 21 is gradually increased as the distance from the wafer tray 10 increases. The top of the support shaft has a protrusion 31, and the protrusion 31 is engaged with the groove 21 so that the auxiliary link 20 and the support shaft can be rotated in synchronization. As can be seen from fig. 1, the other parts of the supporting shaft except for the protruding parts 31 which are matched with the grooves 21 are positioned below the auxiliary connecting piece 20, and the protruding parts 31 of the supporting shaft extend into the grooves 21 of the auxiliary connecting piece 20, i.e. the rigid connection between the auxiliary connecting piece 20 and the supporting shaft is realized.
In which the cross-sectional area of the groove 21 of the auxiliary link 20 is set to be gradually increased from top to bottom in order to ensure that the rotational power of the support shaft is efficiently transmitted to the auxiliary link 20, thereby reducing the rotational error of the support shaft with the wafer tray 10. Specifically, the dimension of the support shaft in the transverse direction may be smaller than the dimension of the auxiliary connecting member 20 in the transverse direction, and when the auxiliary connecting member 20 and the support shaft are both of a cylindrical structure, the radial dimension of the support shaft is smaller than the radial dimension of the auxiliary connecting member 20; further, the radial dimension of the portion of the protruding portion 31 of the supporting shaft may be slightly smaller than the radial dimension of the groove 21 of the auxiliary connecting member 20, so as to ensure the effective fit of the protruding portion 31 and the groove 21. In addition, the support shaft may be configured such that the radial dimension of the portion of the protrusion 31 is smaller than or equal to the radial dimension of the groove 21 of the auxiliary connector 20, and the radial dimension of the shaft segment 32 of the support shaft located below the protrusion 31 is larger than or equal to the radial dimension of the auxiliary connector 20, in this case, that is, the radial dimension of the protrusion 31 of the support shaft is not consistent with the radial dimension of the shaft segment 32 located below the protrusion 31.
As can be seen from fig. 1, the heating member is particularly disposed at the bottom of the wafer tray 10 and at the circumferential outer side of the auxiliary connection 20. The heating member located at the circumferential outer side of the auxiliary links 20 may conduct heat generated from the heating member to a portion of the wafer tray 10 connected to the auxiliary links 20 through the auxiliary links 20. When the auxiliary links 20 are located at the center position of the wafer tray 10, heat generated from the heating members located at the circumferential outer sides of the auxiliary links 20 is conducted to the center position of the wafer tray 10 through the auxiliary links 20. The heating member located at the bottom of the wafer tray 10 may further conduct heat to other areas of the wafer tray 10 except the center. It can be seen that, during the heating process of the wafer tray 10, each position of the wafer tray 10 is heated, so as to ensure the temperature of each position point of the lens tray to be uniform, and thus, each wafer on the wafer tray 10 can maintain stable quality.
Further, the heating member is a ring-shaped heating wire or a ring-shaped heating sheet, and the heating member located at the circumferential outer side of the auxiliary link 20 at this time may be specifically a heating wire wound on the outer wall of the auxiliary link 20. The number of winding turns of the heating wire can be changed accordingly according to the change of the length of the ring-shaped auxiliary member, and the number of the winding turns of the heating wire on the outer circumferential wall of the ring-shaped auxiliary member can be increased appropriately for a long length of the ring-shaped auxiliary member to improve the heating efficiency. It will be understood that, in order to make the temperature uniformity of the auxiliary link 20 in the circumferential direction, the number of the heating wire or the heating sheet wound on the outer wall of the auxiliary link 20 is at least one full turn, and in this case, the dimension of the auxiliary link 20 in the vertical direction is larger than that of the heating member wound on the outer wall thereof, wherein the dimension of the auxiliary link 20 in the vertical direction is also understood as the length of the auxiliary link 20. In addition, the heating member located below the wafer tray 10 may be a ring-shaped heating wire or a ring-shaped heating sheet disposed on the bottom surface of the wafer tray 10, similarly; also, if the wafer tray 10 is a circular tray, the central axis of the annular heating wire or the annular heating plate may be collinear with the axis of the wafer tray 10.
In an embodiment of the present invention, the top end surface of the protruding portion 31 is spaced from the bottom of the groove 21 by a predetermined distance. The gap is provided between the top end surface of the convex portion 31 and the groove bottom of the concave groove 21 in order to reduce the rate of heat conduction between the auxiliary connector 20 and the supporting shaft, so that the heat of the auxiliary connector 20 is mostly conducted to the wafer tray 10. The specific value of the distance is not limited, and the heat conduction path between the top end surface of the protrusion 31 and the groove bottom of the groove 21 may be cut off.
Further, the cross-sectional area of the projection 31 on the support shaft is also gradually increased as the distance from the wafer tray 10 is increased. As can be seen from fig. 1, the groove 21 of the auxiliary link 20 is gradually contracted from bottom to top at this time, and the protrusion 31 is also gradually contracted from bottom to top similarly to the groove 21, which further enables the rotational power of the support shaft to be more efficiently transmitted to the auxiliary link 20. Wherein, the cross-sectional shapes of the groove 21 and the convex part 31 can be a circular cross-section or a polygonal cross-section; when the cross section of the groove 21 is a circular cross section, the overall shape of the groove 21 is a truncated cone shape, and the overall shape of the convex part 31 matched with the groove 21 can also be a truncated cone shape; in addition, in the connection state of the protruding portion 31 and the groove 21, in order to form a gap between the top end surface of the protruding portion 31 and the bottom surface of the groove 21, an included angle between a generatrix of the truncated cone-shaped groove 21 and the bottom surface thereof may be smaller than an included angle between the generatrix of the truncated cone-shaped protruding portion 31 and the bottom surface thereof. In addition to the above, the overall structure of the groove 21 and the protrusion 31 may be frustum pyramid, and the cross-sectional shape of the groove 21 and the protrusion 31 is a polygon, such as: triangular, square, pentagonal, hexagonal, etc. It should be understood that the protrusions 31 and the grooves 21 are similar in structure, so that the protrusions 31 and the grooves 21 are rigidly connected to each other, thereby preventing the auxiliary connection members 20 and the wafer tray 10 from slipping relative to the supporting shaft when the supporting shaft rotates at a high speed.
Fig. 2 is a schematic structural diagram of a wafer tray assembly for an MOCVD system according to another embodiment of the present invention, and as shown in fig. 2, a channel is further provided on the support shaft in the embodiment, the channel runs through from the top end surface of the boss 31 to the circumferential side wall of the shaft section 32 of the support shaft, which is located below the boss 31. The channel extends vertically downwards from the top end surface of the boss 31; after extending a certain distance, horizontally extending to the right until extending to the side wall of the shaft section 32; wherein the distance extending vertically downwards is greater than the height of the boss 31. The purpose of the channels provided in the support shaft is to further reduce the amount of heat that the auxiliary connection 20 conducts to the support shaft. In addition to the above, the channel may specifically extend obliquely downward from the top end surface of the boss 31 until reaching the circumferential side wall of the support shaft; and for the supporting shaft with larger radial dimension, a plurality of channels can be similarly formed on the supporting shaft, so that the heat conducted to the supporting shaft by the auxiliary connecting piece 20 is further reduced.
Further, the outer peripheral wall of the auxiliary connecting member 20 is wave-shaped or zigzag-shaped, and the heating member disposed outside the outer peripheral wall of the auxiliary connecting member 20 may be further embedded in the groove of the outer peripheral wall. For example, when the outer circumferential wall of the auxiliary link 20 has a zigzag structure, the heating member may be a ring-shaped heating wire, and the heating wire may be wound along the zigzag groove. This arrangement is to increase the contact area between the heating element and the auxiliary connection member 20, thereby increasing the heat transfer rate between the heating element and the auxiliary connection member 20.
Additionally, the utility model also discloses a MOCVD system, this system include at least one reaction chamber, and have the wafer tray subassembly that is used for MOCVD system that above arbitrary embodiment disclosed in the reaction chamber. Wherein, the reaction chamber is a vacuum reaction chamber, and the lens tray can be further provided with a wafer placing groove; in addition, the reaction cavity can also be provided with an air inlet which is used for being connected with an external gas generating device so as to convey external reaction gas to the reaction cavity; during the fabrication process, the lenses and wafer pallet 10 may be transferred between the various chambers of the MOCVD system by a pallet transport assembly. Illustratively, the tray transferring part may be a robot arm and a robot arm.
Through the embodiment, the wafer tray assembly for the MOCVD system and the MOCVD system can enable the temperature of the position, connected with the supporting shaft, of the wafer tray to be basically consistent with the temperature of the peripheral area of the wafer tray, so that the temperature uniformity of the wafer tray is guaranteed, and the process uniformity of the wafer is improved.
Features that are described and/or illustrated with respect to one embodiment may be used in the same way or in a similar way in one or more other embodiments and/or in combination with or instead of the features of the other embodiments.
The above listed embodiments show and describe the basic principles and main features of the present invention, but the present invention is not limited by the above embodiments, and the modifications, equivalent changes and modifications made by those skilled in the art without creative work should fall within the protection scope of the technical solution of the present invention.
Claims (10)
1. A wafer tray assembly for an MOCVD system, the wafer tray assembly comprising a wafer tray, an auxiliary connection member, a heating member and a support shaft,
the wafer tray is positioned at the top of the auxiliary connecting piece and is fixedly connected with the auxiliary connecting piece;
the bottom end of the auxiliary connecting piece is provided with a groove which is concave to the wafer tray, and the cross section area of the groove is gradually increased along with the increase of the distance away from the wafer tray;
the top of the supporting shaft is provided with a convex part which is matched with the groove, so that the auxiliary connecting piece and the supporting shaft can synchronously rotate;
the heating member is disposed at a bottom of the wafer tray and a circumferential outer side of the auxiliary connection member.
2. The wafer tray assembly for an MOCVD system of claim 1, wherein a top end surface of the protrusion is spaced a predetermined distance from a bottom of the groove.
3. The wafer tray assembly for an MOCVD system of claim 1, wherein a cross-sectional area of the protrusion gradually increases with increasing distance away from the wafer tray.
4. The wafer tray assembly for use in MOCVD system according to claim 3, wherein a cross section of said grooves and protrusions is circular or polygonal.
5. The wafer tray assembly for an MOCVD system according to claim 1, wherein the support shaft has a channel therethrough from a top end surface of the boss to a circumferential sidewall of a shaft segment of the support shaft located below the boss.
6. The wafer tray assembly for use in MOCVD system according to claim 1, wherein an outer peripheral wall of said auxiliary connector is wave-shaped or saw-toothed.
7. The wafer tray assembly for use in MOCVD system according to claim 1, wherein said heating component is a ring-shaped heating wire or a ring-shaped heating sheet.
8. The wafer tray assembly for an MOCVD system according to any one of claims 1 to 7, wherein the auxiliary connector is located at a middle position of the wafer tray.
9. The wafer tray assembly for use in an MOCVD system of claim 8, wherein the wafer tray is of unitary construction with the auxiliary connection.
10. An MOCVD system, characterized in that the system comprises a reaction chamber, wherein the reaction chamber is internally provided with a wafer tray assembly for the MOCVD system as claimed in any one of claims 1 to 9.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121303698.6U CN215050685U (en) | 2021-06-10 | 2021-06-10 | Wafer tray assembly for MOCVD system and MOCVD system |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202121303698.6U CN215050685U (en) | 2021-06-10 | 2021-06-10 | Wafer tray assembly for MOCVD system and MOCVD system |
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| CN215050685U true CN215050685U (en) | 2021-12-07 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114164414A (en) * | 2021-12-17 | 2022-03-11 | 北京沁圆半导体设备有限公司 | Reaction chamber of chemical vapor deposition device and chemical vapor deposition device |
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2021
- 2021-06-10 CN CN202121303698.6U patent/CN215050685U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114164414A (en) * | 2021-12-17 | 2022-03-11 | 北京沁圆半导体设备有限公司 | Reaction chamber of chemical vapor deposition device and chemical vapor deposition device |
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