CN214976106U - Pre-cleaning equipment for silicon wafer - Google Patents
Pre-cleaning equipment for silicon wafer Download PDFInfo
- Publication number
- CN214976106U CN214976106U CN202120613202.9U CN202120613202U CN214976106U CN 214976106 U CN214976106 U CN 214976106U CN 202120613202 U CN202120613202 U CN 202120613202U CN 214976106 U CN214976106 U CN 214976106U
- Authority
- CN
- China
- Prior art keywords
- cleaning
- bracket
- support
- spray
- silicon wafers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 110
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 91
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 91
- 239000010703 silicon Substances 0.000 title claims abstract description 91
- 235000012431 wafers Nutrition 0.000 claims abstract description 85
- 239000007921 spray Substances 0.000 claims abstract description 32
- 239000002923 metal particle Substances 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000008367 deionised water Substances 0.000 claims abstract description 15
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 15
- 238000004506 ultrasonic cleaning Methods 0.000 claims abstract description 13
- 238000005507 spraying Methods 0.000 claims abstract description 12
- 230000007246 mechanism Effects 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims 1
- 210000005056 cell body Anatomy 0.000 claims 1
- 238000000034 method Methods 0.000 description 8
- 239000007788 liquid Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000003814 drug Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000005108 dry cleaning Methods 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The utility model discloses a cleaning equipment in advance for silicon chip, cleaning equipment includes in proper order in advance: the spraying component is configured to spray and clean a plurality of polished silicon wafers by adopting an HF solution with the concentration of 0.1% -1% so as to remove metal particles on the surfaces of the plurality of polished silicon wafers; the rinsing component is configured to perform ultrasonic cleaning on the silicon wafer which is subjected to spray cleaning by using deionized water so as to remove the residual HF solution on the surface of the silicon wafer which is subjected to spray cleaning; wherein, the silicon slice which is finished with the ultrasonic cleaning is transmitted to the final cleaning equipment for final cleaning.
Description
Technical Field
The utility model relates to a silicon chip makes technical field, especially relates to a cleaning equipment in advance for silicon chip.
Background
In the production process of silicon wafers, the surfaces of the silicon wafers after completion of the polishing process must be strictly cleaned. In general, cleaning of a polished silicon wafer surface can be classified into dry cleaning and wet cleaning, wherein the dry cleaning belongs to a physical method, and the wet cleaning belongs to a chemical method. At present, wet cleaning is always dominant in the cleaning process, mainly because the wet cleaning has good selectivity to impurities and matrixes and can clean the content of the impurities to a very low level. However, in the current cleaning process, before the polished silicon wafer enters a Final cleaning device (FCS), the surface, especially the back surface and the side surfaces of the polished silicon wafer inevitably contact metal particles during the transportation process, and if the metal particles enter the FCS along with the silicon wafer, the metal particles may be introduced into a liquid medicine tank containing ozone (O3) + deionized Water (De-Ionized Water, DIW), which may affect the cleaning effect of the silicon wafer in the Final cleaning process.
SUMMERY OF THE UTILITY MODEL
In order to solve the above technical problem, embodiments of the present invention are directed to providing a pre-cleaning apparatus for silicon wafers; the polishing device can simultaneously carry out batch cleaning on a plurality of polished silicon wafers, and can thoroughly remove metal particles on the surfaces of the silicon wafers while improving the cleaning efficiency so as to reduce the probability of pollution of liquid medicine in FCS equipment by the metal particles.
The technical scheme of the utility model is realized like this:
the embodiment of the utility model provides a cleaning equipment in advance for silicon chip, cleaning equipment includes in proper order in advance:
the spraying component is configured to spray and clean a plurality of polished silicon wafers by adopting an HF solution with the concentration of 0.1% -1% so as to remove metal particles on the surfaces of the plurality of polished silicon wafers;
the rinsing component is configured to perform ultrasonic cleaning on the silicon wafer which is subjected to spray cleaning by using deionized water so as to remove the residual HF solution on the surface of the silicon wafer which is subjected to spray cleaning;
wherein, the silicon slice which is finished with the ultrasonic cleaning is transmitted to the final cleaning equipment for final cleaning.
The embodiment of the utility model provides a pre-cleaning device for a silicon wafer; the pre-cleaning equipment comprises a spraying component and a rinsing component, wherein a plurality of polished silicon wafers can be cleaned in batch through the spraying component, and metal particles on the surfaces of the silicon wafers can be removed through HF solution with the concentration of 0.1% -1%; the rinsing component can rinse off HF solution residual liquid on the surface of the silicon wafer which is subjected to spray cleaning by adopting an ultrasonic cleaning method so as to ensure that the probability of contamination of liquid medicine in FCS equipment is reduced to the minimum level.
Drawings
Fig. 1 is a schematic view of a pre-cleaning apparatus for silicon wafers according to an embodiment of the present invention.
Fig. 2 is a schematic top view of a spraying assembly structure provided in an embodiment of the present invention.
Fig. 3 is a schematic side view of a structure of a spray assembly according to an embodiment of the present invention.
Fig. 4 is a schematic view of a groove on a bearing bracket according to an embodiment of the present invention.
Fig. 5 is a schematic view of a convex guide rail provided by an embodiment of the present invention.
Fig. 6 is a schematic cross-sectional view of a convex guide rail and a concave guide groove provided in an embodiment of the present invention.
Fig. 7 is a schematic structural diagram of a rinsing assembly according to an embodiment of the present invention.
Fig. 8 is a schematic view of a rinse tank according to an embodiment of the present invention.
Fig. 9 is a schematic view of another pre-cleaning apparatus for silicon wafers according to an embodiment of the present invention.
Fig. 10 is a schematic view of a process flow of pre-cleaning a silicon wafer according to an embodiment of the present invention.
Detailed Description
In order to illustrate embodiments of the present invention or technical solutions in the prior art more clearly, the following description will be made in conjunction with the accompanying drawings in embodiments of the present invention to describe the technical solutions in the embodiments of the present invention clearly and completely, and it is obvious that the described embodiments are only some embodiments of the present invention, but not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
Referring to fig. 1, a pre-cleaning apparatus 100 for silicon wafers W according to an embodiment of the present invention is shown, wherein the pre-cleaning apparatus 100 sequentially includes:
the spraying component 101 is configured to spray and clean a plurality of polished silicon wafers W by using an HF solution with the concentration of 0.1% -1% so as to remove metal particles on the surfaces of the plurality of polished silicon wafers W;
the rinsing component 102 is configured to perform ultrasonic cleaning on the silicon wafer W after the spray cleaning by using deionized water to remove the HF solution remaining on the surface of the silicon wafer W after the spray cleaning;
wherein the wafer W having been subjected to the ultrasonic cleaning is transferred to the final cleaning apparatus FCS for final cleaning.
In the specific embodiment of the present invention, it should be noted that, for the polished silicon wafer W, the HF solution with the concentration of 0.1% to 1% can not only remove the natural oxide film on the surface of the silicon wafer W and inhibit the formation of the oxide film, but also has a very good removing effect on the HF solution of metal particles such as Al, Fe, Zn, and Ni on the surface of the silicon wafer.
For the pre-cleaning apparatus 100 provided by the embodiments of the present invention, in some examples, referring to fig. 2 and 3, the spray assembly 101 includes:
a cleaning tank 1011, wherein an opening is arranged at the upper part of the cleaning tank 1011;
a carrier support 1012 disposed on the base plate BA within the cleaning bath 1011, the carrier support 1012 being used to support the plurality of polished silicon wafers W;
a plurality of nozzles 1013 uniformly disposed on both side tank bodies of the cleaning tank 1011 in the arrangement direction of the plurality of polished silicon wafers W within the cleaning tank 1011, the plurality of nozzles 1013 spraying the HF solution toward the plurality of polished silicon wafer surfaces;
a driving mechanism 1014 in driving connection with the plurality of nozzles 1013, the driving mechanism 1014 being used to drive the plurality of nozzles 1013 to vertically move up and down in the height direction of the cleaning bath 1011, so that the area of the HF solution covering the surfaces of the plurality of polished silicon wafers W is increased.
In the above example, when the shower module 101 according to the above-described embodiment is used to perform shower cleaning on a plurality of polished wafers W, the driving mechanism 1014 can control the number of times of vertical movement and the moving speed of the plurality of nozzles 1013, so that the cleaning cost can be saved while cleaning metal particles on the surfaces of the plurality of wafers W in all directions.
For the above example, in order to realize that the plurality of nozzles 1013 can spray and clean the metal particles on the surface of the polished silicon wafer W at different heights, respectively, two driving mechanisms 1014 may be provided in the spray assembly, and the two driving mechanisms 1014 are provided at both sides of the cleaning tank 1011, respectively, to realize that the nozzles 1013 at both sides of the cleaning tank 1011 are vertically moved up and down in the height direction of the cleaning tank 1011, respectively, without synchronization. Specifically, referring to fig. 2, the driving mechanism 1014 on the left side of the cleaning tank 1011 controls the nozzle 1013 on the same side to spray and clean the surface of the silicon wafer W near the opening of the cleaning tank 1011, and accordingly, the driving mechanism 1014 on the right side of the cleaning tank 1011 can control the nozzle 1013 on the same side to clean the surface of the silicon wafer W near the bottom of the cleaning tank 1011, so as to achieve simultaneous cleaning of different positions of the surface of the silicon wafer W by the spray assembly 101, and improve the cleaning efficiency.
For the above example, preferably, in the embodiment of the present invention, referring to fig. 4, the supporting bracket 1012 comprises a first bracket S1 and a second bracket S2, and the first bracket S1 and the second bracket S2 are both provided with a plurality of grooves 401 spaced from each other on a side facing the opening of the cleaning tank 1011; wherein each groove 401 in the first support S1 and the corresponding groove 401 in the second support S2 are capable of carrying a silicon wafer; the distance D between the bottom of the groove 401 of the first support S1 and the bottom of the corresponding groove 401 in the second support S2 is smaller than the diameter D of a single finished polished silicon wafer W. Note that the shape of the groove 401 is not limited to that shown in fig. 4.
For the pre-cleaning apparatus 100 provided by the embodiment of the present invention, in some examples, in order not to introduce new impurities or metal particles, the material of the supporting bracket 1012 is SiO2。
For the pre-cleaning apparatus 100 provided in the embodiment of the present invention, in some examples, preferably, referring to fig. 5 and 6, two convex guide rails 501 are fixedly disposed on the bottom plate BA in the cleaning tank 1011; the first rack S1 and the second rack S2 of the carrying rack 1012 are respectively provided with a concave guide groove 502 which is matched with the convex guide rail 501 so that the first rack S1 and the second rack S2 can slide on the convex guide rail 501 to change the distance between the first rack S1 and the second rack S2 for carrying the silicon wafers W with different diameters; and the first bracket S1 and the second bracket S2 are provided with locking mechanisms 503, and when the first bracket S1 and the second bracket S2 slide to a set position, the locking mechanisms 503 can lock the first bracket S1 and the second bracket S2 so that the first bracket S1 and the second bracket S2 do not slide.
In the above example, the convex rail 501 may be fixed to the bottom plate BA in the cleaning tank 1011 by screws 504, or may be adhered to the bottom plate BA in the cleaning tank 1011 by gluing or the like.
For the pre-cleaning apparatus 100 provided by the embodiment of the present invention, in some examples, in order to realize the cleaning of the spraying assembly 101 on the metal particles on the surfaces of the plurality of polished silicon wafers W, referring to fig. 2, the spraying assembly 101 further includes:
a supply line 1015 communicating with the plurality of nozzles 1013, the supply line 1015 being used to supply the plurality of nozzles 1013 with an HF solution;
and the discharge pipeline 1016 is communicated with the bottom of the cleaning tank 1011, and the discharge pipeline 1016 is used for discharging the HF solution flowing into the cleaning tank 1011 out of the cleaning tank 1011, so that the HF solution stored in the tank body of the cleaning tank 1011 cannot contact the silicon wafer W, and the secondary pollution of the silicon wafer W is prevented.
For the pre-cleaning apparatus 100 provided by the embodiments of the present invention, in some examples, referring to fig. 7, the rinsing assembly 102 includes:
a rinsing tank 1021 for containing deionized water, wherein an opening is arranged at the upper part of the rinsing tank 1021;
a rack 1022 disposed in the rinsing tank 1021 and having a fence shape, wherein the rack 1022 is used for carrying the plurality of silicon wafers W after the spray cleaning;
a plurality of ultrasonic transducers 1023 adhered to the inner bottom of the rinsing tank 1021 and the outer wall of the tank body, wherein the ultrasonic transducers 1023 can generate a large number of micro-bubbles (shown as small circles in the figure) in the deionized water and instantaneously break the micro-bubbles so that the high temperature and impact force generated when each micro-bubble breaks can vibrate in the deionized water to clean the residual HF solution on the surfaces of the silicon wafers W after the spraying and cleaning are finished.
For the above example, preferably, in the embodiment of the present invention, the material of the placing frame is SiO2。
When the rinsing module 102 is used to ultrasonically clean the silicon wafers W that have been subjected to the spray cleaning, the silicon wafers W on the rack 1022 need to be turned over at certain intervals to ensure a good cleaning effect, and the specific interval may be determined by a process worker according to actual conditions.
For the above example, preferably, the rinsing assembly 102 further includes a water inlet 1024 communicated with the side of the rinsing tank 1021 and a water outlet 1025 communicated with the bottom of the rinsing tank 1021, in which case the deionized water in the rinsing tank 1021 is always in a flowing state, thereby ensuring the ultrasonic cleaning effect of the silicon wafer W.
For the above example, referring to fig. 8, when the residual HF solution on the surface of the silicon wafer W is cleaned by ultrasonic oscillation, a plurality of rinsing tanks 1021 may be disposed in the rinsing module 102, and deionized water is contained in each of the plurality of rinsing tanks 1021, and the silicon wafer W after being cleaned by spraying is sequentially placed in each of the rinsing tanks 1021 of the rinsing module 102 for cleaning so as to thoroughly rinse the residual HF solution on the surface of the silicon wafer W.
With respect to the pre-cleaning apparatus 100 provided in the embodiment of the present invention, in some examples, referring to fig. 9, the pre-cleaning apparatus 100 further includes at least one robot H for transferring the plurality of polished silicon wafers W from the polishing apparatus (not shown in the figure) to the spray assembly 101; or the silicon wafer W which is finished with the spray cleaning is transferred to the rinsing component 102 from the spray component 101; or the wafer W having been subjected to the ultrasonic cleaning is transferred from the rinsing module 102 to the final cleaning apparatus FCS.
For the above example, preferably, in the embodiment of the present invention, the material of the manipulator H is SiO2。
It should be noted that, in the embodiment of the present invention, the number of the manipulators H can be selected by the craft according to the size of the pre-cleaning apparatus 100. For example, when two or more robots H are provided, the two or more robots H can be engaged with each other when in use, thereby respectively transferring the silicon wafer W in the above-described embodiment.
The embodiment of the utility model provides a still provide a washing process in advance for silicon chip W, refer to fig. 10, the washing process in advance includes following step in proper order:
s1001: transferring a plurality of polished silicon wafers W into the shower assembly 101 by the robot arm H and inserting into the plurality of grooves 401 of the carrier bracket 1011;
s1002: the driving mechanism 1014 controls the plurality of nozzles 1013 to vertically move up and down along the height direction of the cleaning tank 1011 so that an HF solution with a concentration of 0.1% to 1% is sprayed onto the surfaces of the plurality of polished silicon wafers W to remove metal particles on the surfaces of the plurality of polished silicon wafers W;
s1003: transferring the plurality of silicon wafers W which are subjected to spray cleaning to the rinsing component 102 by the manipulator H, and ultrasonically cleaning HF solution residual liquid on the surfaces of the plurality of silicon wafers W which are subjected to spray cleaning by using deionized water;
s1004: the plurality of silicon wafers W having been subjected to the ultrasonic cleaning are transferred to the final cleaning apparatus FCS by the robot H to be subjected to the final cleaning.
The above description is only for the specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention should be covered by the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (9)
1. A pre-cleaning device for silicon wafers is characterized by comprising the following components in sequence:
the spraying component is configured to spray and clean a plurality of polished silicon wafers by adopting an HF solution with the concentration of 0.1% -1% so as to remove metal particles on the surfaces of the plurality of polished silicon wafers;
the rinsing component is configured to perform ultrasonic cleaning on the silicon wafer which is subjected to spray cleaning by using deionized water so as to remove the residual HF solution on the surface of the silicon wafer which is subjected to spray cleaning;
wherein, the silicon slice which is finished with the ultrasonic cleaning is transmitted to the final cleaning equipment for final cleaning.
2. The pre-cleaning apparatus of claim 1, the spray assembly comprising:
the upper part of the cleaning tank is provided with an opening;
the bearing bracket is arranged on the bottom plate in the cleaning tank and is used for bearing the plurality of polished silicon wafers;
the plurality of nozzles are uniformly arranged on the groove bodies on two sides of the cleaning groove along the arrangement direction of the plurality of polished silicon wafers in the cleaning groove, and the plurality of nozzles spray the HF solution towards the surfaces of the plurality of polished silicon wafers;
and the driving mechanism is in transmission connection with the nozzles and is used for driving the nozzles to vertically move up and down along the height direction of the cleaning tank so as to increase the area of the HF solution covering the surfaces of the silicon wafers which are polished.
3. The pre-cleaning apparatus as claimed in claim 2, wherein the carrying bracket comprises a first bracket and a second bracket, and the first bracket and the second bracket are each provided with a plurality of grooves spaced from each other on a side facing the opening of the cleaning tank; each groove in the first support and the corresponding groove in the second support can bear a silicon wafer; the distance between the bottom of the groove of the first support and the bottom of the corresponding groove in the second support is smaller than the diameter of a single polished silicon wafer.
4. The pre-cleaning apparatus according to claim 3, wherein the material of the carrier support is SiO2。
5. The pre-cleaning apparatus as claimed in claim 4, wherein two convex guide rails are fixedly disposed on the bottom plate inside the cleaning tank; concave guide grooves matched with the convex guide rails are respectively arranged on a first bracket and a second bracket in the bearing brackets, so that the first bracket and the second bracket can slide on the convex guide rails to change the distance between the first bracket and the second bracket so as to bear the silicon wafers with different diameters; and the first support and the second support are provided with locking mechanisms, and when the first support and the second support slide to set positions, the locking mechanisms can lock the first support and the second support so that the first support and the second support do not slide.
6. The pre-cleaning apparatus of claim 1, wherein the rinsing assembly comprises:
the device comprises a rinsing tank containing deionized water, wherein an opening is formed in the upper part of the rinsing tank;
the placing frame is arranged in the rinsing groove and is in a fence shape, and the placing frame is used for bearing the silicon wafers which are subjected to spray cleaning;
bond and bond a plurality of ultrasonic transducer at bottom and cell body outer wall in the rinsing groove, a plurality of ultrasonic transducer can produce a large amount of microbubbles and break in the twinkling of an eye in the inside of deionized water so that every high temperature and impact force that produce when the microbubble breaks vibrate thereby wash inside the taking place of deionized water a plurality of silicon chip surface residual HF solutions that have accomplished to spray the washing have been accomplished.
7. The pre-cleaning apparatus according to claim 6, wherein the material of the placing frame is SiO2。
8. The pre-cleaning apparatus as claimed in claim 1, further comprising at least one robot for transferring the plurality of polished silicon wafers from the polishing apparatus to the shower assembly; or transferring the silicon wafer which is subjected to spray cleaning from the spray assembly to the rinsing assembly; or transferring the silicon wafer which is subjected to ultrasonic cleaning from the rinsing component to the final cleaning equipment.
9. The precleaning apparatus of claim 8, wherein the robot is made of SiO2。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120613202.9U CN214976106U (en) | 2021-03-25 | 2021-03-25 | Pre-cleaning equipment for silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120613202.9U CN214976106U (en) | 2021-03-25 | 2021-03-25 | Pre-cleaning equipment for silicon wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214976106U true CN214976106U (en) | 2021-12-03 |
Family
ID=79162651
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120613202.9U Active CN214976106U (en) | 2021-03-25 | 2021-03-25 | Pre-cleaning equipment for silicon wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214976106U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114887989A (en) * | 2022-05-05 | 2022-08-12 | 中环领先半导体材料有限公司 | Large-diameter silicon wafer box cleaning equipment |
| CN117059530A (en) * | 2023-10-11 | 2023-11-14 | 恒超源洗净科技(深圳)有限公司 | Silicon wafer cleaning tank and cleaning equipment with same |
-
2021
- 2021-03-25 CN CN202120613202.9U patent/CN214976106U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114887989A (en) * | 2022-05-05 | 2022-08-12 | 中环领先半导体材料有限公司 | Large-diameter silicon wafer box cleaning equipment |
| CN117059530A (en) * | 2023-10-11 | 2023-11-14 | 恒超源洗净科技(深圳)有限公司 | Silicon wafer cleaning tank and cleaning equipment with same |
| CN117059530B (en) * | 2023-10-11 | 2023-12-08 | 恒超源洗净科技(深圳)有限公司 | Silicon wafer cleaning tank and cleaning equipment with same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN214976106U (en) | Pre-cleaning equipment for silicon wafer | |
| US5345639A (en) | Device and method for scrubbing and cleaning substrate | |
| CN109004062B (en) | Method and equipment for etching and polishing silicon wafer by using ozone in alkaline system | |
| US5762084A (en) | Megasonic bath | |
| US7264681B2 (en) | Cleaning apparatus and cleaning method | |
| KR101329319B1 (en) | Nozzle and apparatus for treating a substrate with the nozzle | |
| JP3341727B2 (en) | Wet equipment | |
| CN112802780A (en) | Multifunctional pickling table device | |
| KR101776023B1 (en) | Method and apparatus for treating a substrate | |
| JP2002009033A (en) | Washing device for semiconductor wafer | |
| CN114864431A (en) | Quick-discharge flushing tank of tank type cleaning equipment and wafer cleaning method | |
| KR100276766B1 (en) | Substrate cleaning device and substrate cleaning method | |
| CN110517975B (en) | post-CMP cleaning device and cleaning method thereof | |
| KR20130015637A (en) | Apparatus for treating substrate | |
| CN113369229A (en) | Wafer scrubbing machine | |
| KR100794587B1 (en) | Apparatus and method for cleaning substrates | |
| KR20210098137A (en) | First cleaning apparatus, cleaning equipment and method including the same | |
| CN111570380A (en) | Bubble passing protection device and bubble passing protection method of groove type cleaning equipment | |
| KR102598146B1 (en) | Wafer cleaning apparatus | |
| JPH0737316Y2 (en) | Substrate transfer robot chuck cleaning device | |
| CN220553429U (en) | Wafer cleaning device | |
| CN117423644B (en) | Wafer cleaning method | |
| JP6751421B2 (en) | Wafer cleaning apparatus and method for cleaning wafer cleaning apparatus using the same | |
| KR20130060627A (en) | Apparatus for treating substrate | |
| JP3450200B2 (en) | Substrate processing equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220811 Address after: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Patentee after: Xi'an yisiwei Material Technology Co.,Ltd. Patentee after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Patentee before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Patentee before: Xi'an yisiwei Material Technology Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Patentee after: Xi'an Yisiwei Material Technology Co.,Ltd. Patentee after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Patentee before: Xi'an yisiwei Material Technology Co.,Ltd. Patentee before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |