CN214797405U - High-bonding-force aluminum nitride copper-clad ceramic substrate - Google Patents
High-bonding-force aluminum nitride copper-clad ceramic substrate Download PDFInfo
- Publication number
- CN214797405U CN214797405U CN202121126397.0U CN202121126397U CN214797405U CN 214797405 U CN214797405 U CN 214797405U CN 202121126397 U CN202121126397 U CN 202121126397U CN 214797405 U CN214797405 U CN 214797405U
- Authority
- CN
- China
- Prior art keywords
- ceramic substrate
- layer
- aluminium nitride
- nitride ceramic
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The utility model provides a copper ceramic substrate is covered to high cohesion aluminium nitride, including the aluminium nitride ceramic substrate after the alligatoring, with the first bonding layer of the aluminium nitride ceramic substrate contact after the alligatoring, with the second copper layer and the second copper layer surface treatment layer of first bonding layer contact, first bonding layer is by a metal or the combination of metal more than two kinds, through carrying out the alligatoring to aluminium nitride ceramic substrate, promotes surperficial roughness, forms to be connected with the metal film on first bonding layer again behind the aluminium oxide thin layer, has improved the degree of combination on aluminium nitride ceramic substrate surface, further promote in aluminium nitride ceramic substrate with the cohesion on second copper layer, solve semiconductor module greatly after long-time work, aluminium nitride ceramic and copper layer separation easily appear, lead to the risk that semiconductor module performance descends by a wide margin or even inefficacy.
Description
Technical Field
The utility model relates to a semiconductor, high-power device encapsulation field especially relate to a copper ceramic substrate is covered to high cohesion aluminium nitride.
Background
Along with the fact that the modularization degree of the power semiconductor device is higher and higher, the current capacity and the power density of a power semiconductor module are continuously improved, the power consumption of a unit area is greatly increased, and heat dissipation becomes a key problem of a high-power module. Although alumina ceramics, which is a traditional basic key material for module manufacturing, has excellent mechanical properties, high insulating strength and low price, the alumina ceramics have low thermal conductivity (20-30W/m.K) and large difference between linear expansion coefficient and silicon, and can not meet the requirements of high-power semiconductor modules.
The insulating property and the mechanical property of the aluminum nitride ceramic are not much different from those of aluminum oxide, but the thermal conductivity is about 7 times that of the aluminum oxide ceramic, and the linear expansion coefficient of the aluminum nitride ceramic is closer to that of silicon, so that the aluminum nitride ceramic can replace the traditional aluminum oxide ceramic substrate to be used as a basic key material of a high-power and high-integration module.
However, the wettability of the aluminum nitride ceramic and the metal film layer is poor, so that the bonding force between the surface copper layer and the ceramic is poorer than that between the aluminum oxide (ceramic) and the metal layer, and after the semiconductor module works for a long time, the aluminum nitride ceramic and the copper layer are easily separated, so that the performance of the semiconductor module is greatly reduced and even fails.
The existing method for solving the problem of the bonding force between the aluminum nitride ceramic plate and the copper is as follows: 1) before magnetron sputtering, the ceramic wafer is subjected to vacuum heating for a long time to remove moisture, then a plurality of metal composite film layers are sputtered, and a film layer curing process is added subsequently; 2) and depositing a thin film metal layer on the surface of the aluminum nitride by utilizing thermal disproportionation reaction. The first method has complex and fussy working procedures, high requirements on equipment and high cost. The second method has complex process, needs to control a plurality of process parameters, is difficult to control the thickness of the film layer, and is not beneficial to industrial automatic production.
SUMMERY OF THE UTILITY MODEL
In order to improve the infiltration nature power of aluminium nitride ceramic substrate surface and metal film layer, realize the cohesion of aluminium nitride ceramic substrate and copper layer, the utility model provides a high cohesion aluminium nitride covers copper ceramic substrate, through carrying out chemical alligatoring or laser etching alligatoring to aluminium nitride ceramic substrate under certain conditions, increase the roughness on aluminium nitride ceramic wafer surface, and formed one deck aluminium oxide thin layer on the surface, the good and substrate surface's of infiltration nature of aluminium oxide and metal roughness increase, can strengthen the infiltration nature power of aluminium nitride ceramic substrate and film metal layer, thereby improve the cohesion of aluminium nitride ceramic substrate and copper layer.
The utility model discloses a realize through following scheme:
the utility model provides a high cohesion aluminium nitride copper-clad ceramic substrate, including aluminium nitride ceramic substrate 1 after the alligatoring, with the first bonding layer 2 of 1 contact of aluminium nitride ceramic substrate after the alligatoring, with the second copper layer 3 of 2 contacts of first bonding layer and with the second copper layer surface treatment layer 4 of 3 contacts of second copper layer, aluminium nitride ceramic substrate 1 after the alligatoring has two positive and negative sides aluminium nitride ceramic substrate 1's after the alligatoring positive and negative two sides are equipped with first bonding layer 2, second copper layer 3 and second copper layer surface treatment layer 4 in proper order, first bonding layer 2 is by a metal or the combination of metals more than two.
Preferably, the second copper layer surface treatment layer 4 is made of one metal or a combination of two or more metals such as silver, nickel, palladium, gold, and the like.
Preferably, the roughness of the surface of the roughened aluminum nitride ceramic substrate 1 is 0.2 to 0.6 μm.
Preferably, a through hole 5 is further formed in the roughened aluminum nitride ceramic substrate 1, and metal is filled in the through hole 5 and is used for connecting the first bonding layer 2 on the front side and the back side of the roughened aluminum nitride ceramic substrate 1.
Preferably, the roughened aluminum nitride ceramic substrate 1 is etched chemically or by laser.
Preferably, the metal film of the first bonding layer 2 can be realized by magnetron sputtering, vapor deposition or chemical deposition, the first bonding layer 2 is used for enhancing the bonding force between the substrate and the electroplated metal layer, the second copper layer 3 is realized by electroplating, the second copper layer 3 is used for bearing the packaged chip, and the second copper layer surface treatment layer 4 can be realized by chemical plating or electroplating.
The utility model discloses a carry out the alligatoring to aluminium nitride ceramic substrate, promote the roughness on surface, form and be connected with the metal film of first bonding layer 2 again behind the aluminium oxide thin layer, improved the joint degree on aluminium nitride ceramic substrate surface, further promote in aluminium nitride ceramic substrate with the cohesion of second copper layer 3 solves the semiconductor module greatly after long-time work, easily appears aluminium nitride ceramic and copper layer separation, leads to the risk that the semiconductor module performance descends by a wide margin or even became invalid.
Drawings
Fig. 1 is a schematic structural diagram of an embodiment of the present invention.
Reference numerals
1-coarsened aluminum nitride ceramic substrate, 2-a first bonding layer, 3-a second copper layer, 4-a second copper layer surface treatment layer and 5-a through hole.
Detailed Description
In order to make the technical problem, technical solution and advantageous effects to be solved by the present invention more clearly understood, the following description is given in conjunction with the accompanying drawings and embodiments to illustrate the present invention in further detail. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
As shown in fig. 1, the copper clad laminate comprises a roughened aluminum nitride ceramic substrate 1, a first bonding layer 2 in contact with the aluminum nitride ceramic substrate 1, a second copper layer 3 in contact with the first bonding layer 2, and a second copper layer surface treatment layer 4 in contact with the second copper layer 3; aluminium nitride ceramic substrate 1 after the alligatoring has two sides the two sides of aluminium nitride ceramic substrate 1 after the alligatoring is equipped with first bonding layer 2, second copper layer 3 and second copper layer surface treatment layer 4 in proper order 1 both ends of aluminium nitride ceramic substrate after the alligatoring are equipped with through-hole 5, through-hole 5 is connected the first bonding layer 2 of two sides is just turned over to aluminium nitride ceramic substrate 1 after the alligatoring.
The roughened aluminum nitride ceramic substrate 1 is obtained through a laser etching mode, the surface roughness is 0.23 mu m, then a layer of metal nickel is electroplated in the through hole 5 through 2 left and right laser processing through-holes 5 in the roughened aluminum nitride ceramic substrate 1, according to the circuit design, a titanium-tungsten alloy layer is deposited on the roughened aluminum nitride ceramic substrate 1 through a chemical sputtering mode to form a first combination layer 2, a corresponding electroplating pattern is manufactured through a pattern transfer mode, a layer of copper is electroplated on the first combination layer 2 to form a second copper layer 3, and then chemical silver plating is carried out on the surface of the second copper layer 3 to form a second copper layer surface treatment layer 4.
The utility model discloses a carry out the alligatoring to aluminium nitride ceramic substrate, promote the roughness on surface, form and be connected with the metal film of first bonding layer 2 again behind the aluminium oxide thin layer, improved the joint degree on aluminium nitride ceramic substrate surface, further promote in aluminium nitride ceramic substrate 2 with the cohesion on second copper layer 3 solves the semiconductor module greatly after long-time work, easily appears aluminium nitride pottery and copper layer separation, leads to the risk that the semiconductor module performance descends by a wide margin or even became invalid.
The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, as any modifications, equivalents, improvements and the like made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.
Claims (5)
1. The utility model provides a high cohesion aluminium nitride copper-clad ceramic substrate, its characterized in that, including aluminium nitride ceramic substrate (1) after the alligatoring, aluminium nitride ceramic substrate (1) after the alligatoring has tow sides the tow sides of aluminium nitride ceramic substrate (1) after the alligatoring are equipped with first bonding layer (2), second copper layer (3) and second copper layer surface treatment layer (4) in proper order, first bonding layer (2) are by a metal or the metal combination more than two.
2. The high-bonding-force aluminum nitride copper-clad ceramic substrate according to claim 1, wherein the second copper layer surface treatment layer (4) is made of one metal or a combination of two or more metals.
3. The high-bonding-force aluminum nitride copper-clad ceramic substrate according to claim 1, wherein the roughened aluminum nitride ceramic substrate (1) has a surface roughness of 0.2-0.6 μm.
4. The high-bonding-force aluminum nitride copper-clad ceramic substrate according to claim 3, wherein the roughened aluminum nitride ceramic substrate (1) is further provided with through holes (5).
5. The high-bonding-force aluminum nitride copper-clad ceramic substrate according to claim 1, wherein the roughened aluminum nitride ceramic substrate (1) is etched by chemical etching or laser etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121126397.0U CN214797405U (en) | 2021-05-25 | 2021-05-25 | High-bonding-force aluminum nitride copper-clad ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121126397.0U CN214797405U (en) | 2021-05-25 | 2021-05-25 | High-bonding-force aluminum nitride copper-clad ceramic substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214797405U true CN214797405U (en) | 2021-11-19 |
Family
ID=78697212
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202121126397.0U Active CN214797405U (en) | 2021-05-25 | 2021-05-25 | High-bonding-force aluminum nitride copper-clad ceramic substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214797405U (en) |
-
2021
- 2021-05-25 CN CN202121126397.0U patent/CN214797405U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100496188C (en) | Aluminum-base printing circuit board and its production | |
| CN108133915B (en) | Power module with built-in power device and double-sided heat dissipation function and manufacturing method thereof | |
| US6391473B2 (en) | Cu plated ceramic substrate and a method of manufacturing the same | |
| CN108109986B (en) | Ceramic module for power semiconductor integrated package and preparation method thereof | |
| JP2013065865A (en) | Manufacturing method of heat radiation substrate | |
| CN102291928A (en) | Heat-conducting insulating aluminum nitride metal base plate and manufacturing method thereof | |
| CN111069611B (en) | Preparation method of graphite-graphene-metal composite material | |
| CN103327732A (en) | High heat conduction substrate and manufacturing method thereof | |
| CN202736904U (en) | Copper pour silicon basal plate | |
| CN113795091A (en) | Method for preparing ceramic circuit board by low-temperature sintering | |
| CN113645765B (en) | Copper-clad substrate for high-end printed circuit board and preparation method thereof | |
| CN104135816B (en) | Aluminum-based copper-clad plate and preparation method thereof, circuit electronic circuit board | |
| CN214797405U (en) | High-bonding-force aluminum nitride copper-clad ceramic substrate | |
| KR19990045105A (en) | Board | |
| CN215345209U (en) | Ceramic substrate with high thermal conductivity | |
| CN105914283B (en) | Heat-radiating substrate, power module and the method for preparing heat-radiating substrate | |
| PH12015501631B1 (en) | Multi-level metalization on a ceramic substrate | |
| TW201542078A (en) | Method for manufacturing ceramic substrate heat-dissipating structure | |
| EP0219122B1 (en) | Metallized ceramic substrate and method of manufacturing the same | |
| CN217721587U (en) | Ceramic substrate with stable structure | |
| CN103560094A (en) | Golden aluminum bimetal bonding transferring method | |
| CN216217713U (en) | DPC ceramic multilayer circuit board structure | |
| CN114900969A (en) | Printed circuit board and manufacturing method thereof | |
| CN1331217C (en) | Wafer package structure and its base plate | |
| CN112492745A (en) | Package substrate, method for manufacturing substrate, and method for manufacturing substrate circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |