CN112492745A - Package substrate, method for manufacturing substrate, and method for manufacturing substrate circuit - Google Patents

Package substrate, method for manufacturing substrate, and method for manufacturing substrate circuit Download PDF

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Publication number
CN112492745A
CN112492745A CN202011475722.4A CN202011475722A CN112492745A CN 112492745 A CN112492745 A CN 112492745A CN 202011475722 A CN202011475722 A CN 202011475722A CN 112492745 A CN112492745 A CN 112492745A
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China
Prior art keywords
layer
substrate
insulating layer
base material
hard insulating
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CN202011475722.4A
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Chinese (zh)
Inventor
杨绍波
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Shenzhen Huicheng Precision Technology Co ltd
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Shenzhen Huicheng Precision Technology Co ltd
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/142—Metallic substrates having insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H05K1/0209—External configuration of printed circuit board adapted for heat dissipation, e.g. lay-out of conductors, coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/44—Manufacturing insulated metal core circuits or other insulated electrically conductive core circuits

Abstract

The invention belongs to the technical field of packaging substrates, and particularly relates to a packaging substrate, a manufacturing method of the substrate and a manufacturing method of a substrate circuit. The packaging substrate comprises a metal base material, honeycomb micropores are formed in the surface of the metal base material, a hard insulating layer is plated on the surface of the metal base material, a titanium alloy mesh layer is arranged on the surface of the hard insulating layer, and a conducting layer is arranged on the surface of the titanium alloy mesh layer. This packaging substrate uses metal substrate as the substrate, and carry out nanometer micropore processing at the surface of substrate and form the honeycomb micropore, the honeycomb micropore produces great stress when can avoiding metal substrate cold and hot impact and breaks, the hard insulation layer plays the insulation protection effect, the titanium alloy rete prevents effectively that cold and hot impact meets an emergency, the conducting layer has high-efficient electrically conductive characteristic, through above structure, finally can reach the circuit to the substrate surface and protect and have the effect of good heat conduction characteristic, and make the circuit board that utilizes this base plate preparation have good heat radiation characteristic.

Description

Package substrate, method for manufacturing substrate, and method for manufacturing substrate circuit
Technical Field
The invention belongs to the technical field of packaging substrates, and particularly relates to a packaging substrate, a manufacturing method of the substrate and a manufacturing method of a substrate circuit.
Background
The electronic substrate is a carrier for packaging chips of electronic elements such as semiconductors and the like, carries a support of electronic components, forms a base plate of an electronic circuit, can be divided into a common substrate, a printed circuit board, a module substrate and the like according to the structure, mainly has four functions of maintaining electrical characteristics, protecting chips, relieving stress and adjusting size, and has the function of realizing and maintaining connection from an integrated circuit device to a system, including electrical connection and physical connection. At present, the number of I/O lines of integrated circuit chips is increasing, and their power supply and signal transmission are all implemented by packaging to connect with the system. The speed of chips is getting faster and the power is getting larger, so that the heat conduction problem of chips is getting more and more serious, and the importance of the function of packaging for protecting the circuit is decreasing due to the improvement of the quality of a chip passivation layer.
The existing packaging substrate adopts two forming modes, one is to use a ceramic copper-clad material as a base material and carry out the process procedures of polishing, cleaning, adding soldering flux, passing through a tin furnace and the like, and the other is to use a copper-ceramic sintered alloy material as a base material and carry out the process procedures of draining a guide vane, adding the soldering flux, passing through the tin furnace and the like.
In any of the above forming methods, the surface of the substrate produced by the method can achieve a certain insulation effect, but the process of manufacturing the base material is complex in process flow, high in difficulty of anisotropic processing and high in production cost, the tin on the substrate is processed by a tin furnace, high in risk, the phenomenon of tin connection between copper foils is easy to generate, the temperature difference during discharging is high, the substrate can be broken, meanwhile, the thermal conductivity of the two base materials and the heat-conducting substrate generated by the adopted process flow does not exceed 22K (w/m-K), and the circuit manufactured by the base material can not meet the heat-conducting requirement of the LED of the electronic elements such as semiconductors when packaging the electronic elements such as semiconductors, so that the performance of the electronic elements such as semiconductors is reduced.
Disclosure of Invention
The invention aims to provide a packaging substrate, and aims to solve the technical problems of low heat conduction efficiency and high production cost of the packaging substrate in the prior art.
In order to achieve the above object, an embodiment of the present invention provides a package substrate, which includes a metal substrate, wherein a plurality of honeycomb micropores processed by nano micropores and uniformly spaced are disposed on a surface of the metal substrate, a hard insulating layer is plated on the surface of the metal substrate, the hard insulating layer is used for insulating the metal substrate, a titanium alloy mesh layer is disposed on the surface of the hard insulating layer, a conductive layer is disposed on the surface of the titanium alloy mesh layer, and hardness of the metal substrate, the hard insulating layer, and the titanium alloy mesh layer increases in sequence.
Optionally, the metal substrate is made of an aluminum alloy, the hard insulating layer is an aluminum oxide film, and the thickness of the aluminum oxide film is between 25 μm and 50 μm.
Optionally, the metal substrate is made of a pure copper material, the hard insulating layer is an epoxy resin film, and the thickness of the epoxy resin film is between 15 μm and 30 μm.
Optionally, a first permeation symbiotic layer is arranged between the metal substrate and the hard insulating layer, and the first permeation symbiotic layer is formed by mutual permeation and occlusion of the surface of the metal substrate and the surface of the hard insulating layer.
Optionally, a second infiltration symbiotic layer is arranged between the hard insulating layer and the titanium alloy mesh layer, and the second infiltration symbiotic layer is formed by mutually infiltrating and meshing the surface of the hard insulating layer and the surface of the titanium alloy mesh layer.
One or more technical solutions in the package substrate provided by the embodiment of the present invention have at least one of the following technical effects: the packaging substrate takes a metal substrate as a substrate, nano-micropore treatment is carried out on the surface of the substrate to form honeycomb micropores, after the nano micropores are formed on the surface of the substrate, a hard insulating layer, a titanium alloy mesh layer and a conducting layer are sequentially arranged on the surface of the substrate from inside to outside, through the structure, the hard insulating layer is used as the insulating layer of the substrate, when the packaging substrate is used, a circuit is printed on the surface of the substrate, redundant parts of the circuit are etched to the hard insulating layer, electronic elements such as semiconductors are installed on the circuit, when the circuit is electrified, the electronic elements such as the semiconductors absorb or emit a large amount of heat, and because of the conducting layer, the titanium alloy mesh layerThe insulating layer and the metal base material both have good thermal conductivity, and can remarkably improve the thermal conductivity and the heat-conducting property of the substrate, so that the thermal conductivity of the substrate can reach 195K (w/m-K) and 1344m2The metal base material has good ductility and is easy to generate thermal strain, the surface of the metal base material is subjected to nano micropore treatment to form honeycomb micropores, the honeycomb micropores resist external impact and prevent the metal base material from being separated and cracked in the cold and hot impact process, the surface of the metal base material is sequentially provided with a hard insulating layer, a titanium alloy mesh layer and a conducting layer from inside to outside, the hard insulating layer can protect and insulate the metal base material, the titanium alloy mesh layer can resist the thermal strain of the metal base material, the nano meshes on the titanium alloy mesh layer can improve the ductility of the titanium alloy mesh layer to protect the structure of the titanium alloy mesh layer, the strain which is insufficient to support the metal base material due to overlarge temperature difference of the metal base material is prevented, the self structure is damaged, and the conducting layer can enable the substrate to have good conducting effect, so that the substrate can ensure efficient heat conduction and heat dissipation, the strength of resisting thermal strain of the packaging substrate can be ensured, and the practicability of the packaging substrate is effectively improved.
In order to achieve the above object, an embodiment of the present invention provides a method for manufacturing a package substrate, including:
and S100, carrying out micropore treatment on the surface of the metal base material to form honeycomb holes.
And S200, removing impurities on the surface of the metal base material after the honeycomb micropores are formed.
And S300, carrying out electrochemical treatment on the cleaned metal base material, and forming a hard insulating layer on the surface of the metal base material so as to insulate the surface of the metal base material.
And S400, coating an electric deposition layer on the surface of the hard insulating layer by utilizing chemical deposition, and removing the electric deposition layer by utilizing plasma cleaning.
And S500, plating a titanium alloy mesh layer on the surface of the hard insulating layer.
And S600, coating or electroplating a conductive layer on the surface of the titanium alloy mesh layer.
Optionally, the step S600 of coating the conductive layer is vacuum sputtering a pure copper layer, and after vacuum sputtering the pure copper layer, vacuum plating an oxidation-resistant layer on the surface of the pure copper layer.
Optionally, after the step S200, performing electrochemical treatment on the surface of the metal substrate, and forming a first infiltration symbiotic layer with a thickness of 2 μm to 5 μm on the surface of the metal substrate.
Optionally, after step S400, performing electrochemical treatment on the surface of the hard insulating layer, and forming a second osmosis symbiotic layer on the surface of the hard insulating layer.
One or more technical solutions in the manufacturing method of the package substrate provided by the embodiment of the invention have at least one of the following technical effects:
through the steps of the manufacturing method, the base plate which takes the metal base material as the base material, the surface of the base material is provided with the plurality of honeycomb micropores, and the base plate is sequentially provided with the hard insulating layer, the titanium alloy mesh layer, the conducting layer and the anti-oxidation layer from inside to outside can be produced.
In order to achieve the above object, an embodiment of the present invention provides a method for manufacturing a substrate circuit of a package substrate, including the following steps:
and S100, polishing the surface of the substrate to expose the conductive layer.
And S200, attaching a dry film or smearing photosensitive blue oil on the surface of the substrate.
And S300, exposing and developing the substrate by using an alkaline developer.
And S400, etching the conductive layer by using alkaline etching liquid.
S500, placing the substrate in ethylene glycol monobutyl ether or methyl ethyl ketone to be soaked for 60-180S, brushing the substrate, and removing the dry film or the photosensitive blue oil.
S600, soaking the base material in a titanium metal etching solution, and etching the titanium alloy mesh layer to expose the hard insulating layer.
And S700, removing the residual etching solution on the surface of the hard insulating layer.
And S800, baking the substrate to remove the moisture on the surface of the hard insulating layer.
One or more technical solutions in the manufacturing method of the package substrate provided by the embodiment of the invention have at least one of the following technical effects: through the implementation steps, the circuit of the electronic elements such as semiconductors and the like can be manufactured on the surface of the substrate, the electronic elements such as the semiconductors and the like are installed on the circuit, when the circuit is electrified, heat dissipation or heat absorption can be carried out through the substrate, and the substrate can be applied to a refrigerating or heating system such as a refrigerator and a water dispenser or used for heat dissipation of a circuit board in the circuit board or used as a circuit board substrate to improve the service performance of the electronic elements on the circuit board, so that the service performance of electronic products is obviously improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a cross-sectional view of a package substrate according to an embodiment of the invention.
Fig. 2 is a partially enlarged view of a portion a in fig. 1.
Fig. 3 is a flowchart of a manufacturing process of a package substrate according to an embodiment of the invention.
Fig. 4 is a flowchart illustrating a substrate circuit manufacturing process of a package substrate according to an embodiment of the invention.
Wherein, in the figures, the respective reference numerals:
10-metal substrate 11-honeycomb micropore 20-hard insulating layer
30-titanium alloy mesh layer 40-conductive layer 50-anti-oxidation layer
60-first osmotic symbiotic layer 70-first osmotic symbiotic layer.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary and intended to be illustrative of the embodiments of the present invention, and should not be construed as limiting the invention.
In the description of the embodiments of the present invention, it should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the embodiments of the present invention and simplifying the description, but do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the embodiments of the present invention, "a plurality" means two or more unless specifically limited otherwise.
In the embodiments of the present invention, unless otherwise explicitly specified or limited, the terms "mounted," "connected," "fixed," and the like are to be construed broadly, e.g., as being fixedly connected, detachably connected, or integrated; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. Specific meanings of the above terms in the embodiments of the present invention can be understood by those of ordinary skill in the art according to specific situations.
In an embodiment of the present invention, as shown in fig. 1 to 2, a package substrate is provided, which includes a metal substrate 10, a surface of the metal substrate 10 is provided with a plurality of honeycomb micropores 11 processed by nano micropores and uniformly spaced, a surface of the metal substrate 10 is plated with a hard insulating layer 20, the hard insulating layer 20 is used for insulating the metal substrate 10, a surface of the hard insulating layer 20 is provided with a titanium alloy mesh layer 30, a surface of the titanium alloy mesh layer 30 is provided with a conductive layer 40, and hardnesses of the metal substrate 10, the hard insulating layer 20, and the titanium alloy mesh layer 30 sequentially increase.
Specifically, the packaging substrate takes a metal base material 10 as a base material, nano micropore treatment is carried out on the surface of the base material to form honeycomb micropores 11, after the nano micropores are formed on the surface of the base material, a hard insulating layer 20, a titanium alloy mesh layer 30 and a conducting layer 40 are sequentially arranged on the surface of the base material from inside to outside, through the structure, the hard insulating layer 20 is used as the insulating layer of the substrate, when in use, a circuit is printed on the surface of the substrate, redundant parts of the circuit are etched to the hard insulating layer 20, electronic elements such as a semiconductor are installed on the circuit, and when the circuit is electrified, the electronic elements such as the semiconductor absorb or emit a large amount of heat, and because the conducting layer 40, the titanium alloy mesh layer 30, the hard insulating layer 20 and the metal base material 10 all have good thermal conductivity, the substrate can achieve the thermal conductivity of 195K (w/m-2The heat conduction and heat conduction performance of the substrate can be obviously improved, as the metal base material 10 has good ductility and is easy to generate thermal strain, the surface of the metal base material 10 is processed by nanometer micropores to form honeycomb micropores 11, the honeycomb micropores 11 resist external impact and prevent the metal base material 10 from being separated from and cracked with the hard insulating layer 20 in the process of cold and hot impact, the surface of the metal base material 10 is sequentially provided with the hard insulating layer 20, the titanium alloy mesh layer 30 and the conducting layer 40 from inside to outside, the hard insulating layer 20 can protect and insulate the metal base material 10, the titanium alloy mesh layer 30 can resist the thermal strain of the metal base material, the nanometer mesh on the titanium alloy mesh layer 30 can improve the ductility of the titanium alloy mesh layer 30 so as to protect the structure of the titanium alloy mesh layer 30 and prevent the strain which is not enough to support the metal base material 30 due to overlarge temperature difference of the metal base material 30 so as to damage the structure of the titanium alloy, the conductive layer 40 can make the substrate have good conductivityThe effect for the base plate can also guarantee self to resist the intensity that the heating power meets an emergency when guaranteeing high-efficient electric conduction, heat conduction radiating, effectively promotes packaging substrate's practicality.
To demonstrate the thermal conductivity of the package substrate, the package substrate was compared with a ceramic copper-clad substrate and a copper-ceramic sintered substrate, and the comparison results are shown in the following table (table 1): (the superconducting refrigeration substrate shown in the table is the packaging substrate of the invention)
Figure BDA0002835267370000071
In this embodiment, the thickness of the titanium alloy mesh layer 30 is between 0.05 μm and 0.3 μm, and the deformation of the conductive plate and the hard insulating layer 20 can be effectively reduced by a thin layer of titanium alloy, so as to protect the structure of the package substrate, and the thickness of the titanium alloy mesh layer 30 does not increase the production cost of the circuit board.
In this embodiment, the depth and diameter of the honeycomb pores 11 and the distance between adjacent honeycomb pores 11 are all between 100nm and 2000 nm.
Specifically, by arranging the nano-scale honeycomb micropores 11, the honeycomb micropores 11 can be distributed over the entire surface of the metal base material 10, when the substrate absorbs heat and cools, the metal base material 10 is cooled and shrunk, the surrounding sides of the honeycomb micropores 11 shrink to fill the interiors of the honeycomb micropores 11, and the honeycomb micropores 11 under the pore diameter have sufficient shrinkage space, so that the pore diameter of the honeycomb micropores 11 is reduced to prevent the metal base material 10 from being greatly deformed due to shrinkage; when the substrate is heated, the metal base material 10 is heated and expanded, the peripheral sides of the honeycomb micropores 11 are expanded, and the aperture of the honeycomb micropores 11 is increased, so as to prevent the metal base material 10 from breaking due to the expansion.
In another embodiment of the present invention, the metal substrate 10 is made of an aluminum alloy, and the hard insulating layer 20 is an aluminum oxide film. Specifically, the aluminum alloy has good thermal conductivity and heat dissipation performance, and the high-strength and high-thermal conductivity aluminum oxide insulating film can be formed only by oxidizing the electrode, so that the thermal strain generated by the aluminum alloy substrate in the heat conduction process can be effectively relieved while the metal substrate 10 is protected by the film.
In another embodiment of the present invention, the thickness of the alumina thin film is between 25 μm and 50 μm. Specifically, the alumina film in the thickness range can obtain high-efficiency insulation effect, and meanwhile, the thermal conductivity of the substrate is not reduced due to the fact that the alumina film is too thick.
In another embodiment of the present invention, the metal substrate 10 is made of pure copper material, and the hard insulating layer 20 is an epoxy resin film. Specifically, the epoxy resin has heat resistance, and effectively prevents thermal shock.
In another embodiment of the present invention, the thickness of the epoxy resin film is between 15 μm and 30 μm. Specifically, the epoxy resin film with the thickness within the range can obtain an efficient insulation effect, and meanwhile, the thermal conductivity of the substrate is not reduced due to the fact that the epoxy resin film is too thick.
In another embodiment of the present invention, as shown in fig. 1 to 2, a first infiltration symbiotic layer 60 is disposed between the metal substrate 10 and the hard insulating layer 20, the first infiltration symbiotic layer 60 is formed by mutually infiltrating and engaging the surface of the metal substrate 10 and the surface of the hard insulating layer 20, and the thickness of the first infiltration symbiotic layer is between 2 μm and 5 μm.
Specifically, the first interpenetrating polymer layer 60 is formed by electrochemical oxidation along the surface of the honeycomb micropores 11, and the first interpenetrating polymer layer 60 may increase the engaging force between the metal base material 10 and the hard insulating layer 20, prevent the metal base material 10 from being separated from the hard insulating layer 20 due to thermal deformation, and simultaneously increase the ductility between the metal base material 10 and the hard insulating layer 20, and prevent the metal base material 10 from cracking due to deformation.
In another embodiment of the present invention, as shown in fig. 1 to 2, a second infiltration symbiotic layer 70 is disposed between the hard insulating layer 20 and the titanium alloy mesh layer 30, and the second infiltration symbiotic layer 70 is formed by mutually infiltrating and meshing the surface of the hard insulating layer 20 and the surface of the titanium alloy mesh layer 30.
Specifically, the surface of the hard insulating layer 20 is provided with micropores, the second osmosis symbiotic layer 70 is formed by electrochemical oxidation along the surface of the hard insulating layer 20, and the second osmosis symbiotic layer 70 can increase the engaging force between the hard insulating layer 20 and the titanium alloy mesh layer 30, prevent the hard insulating layer 20 from being separated from the titanium alloy mesh layer 30 due to thermal deformation, and simultaneously improve the ductility between the titanium alloy mesh layer 30 and the hard insulating layer 20.
In another embodiment of the present invention, the conductive layer 40 is a pure copper layer, the thickness of the conductive layer 40 is between 35 μm and 75 μm, and the surface of the pure copper layer is plated with an oxidation prevention layer. Specifically, when pure copper is used as the base material of the conductive layer 40, an oxidation preventing layer is plated on the surface of the pure copper layer to prevent the pure copper from being oxidized, the thickness of the conductive layer affects the conductivity of the circuit of the substrate, and the conductive layer 40 is not too thick to affect the etching of the substrate.
In this embodiment, the oxidation preventing layer 50 is gold, and the thickness of the oxidation preventing layer is between 0.08 μm and 0.15 μm. Specifically, pure gold has high-quality anti-oxidation and corrosion resistance, and the pure copper layer is oxidized before the etching substrate can be effectively avoided, so that the electric conductivity of the substrate is reduced, the anti-oxidation layer 50 with the thickness can not increase the production cost of the substrate when the pure copper layer is effectively protected, and the gold can be conveniently removed by a grinding brush.
In an embodiment of the present invention, as shown in fig. 3, a method for manufacturing a package substrate is provided, which includes the following steps:
and S100, carrying out micropore treatment on the surface of the metal base material to form honeycomb micropores.
And S200, removing impurities on the surface of the metal base material after the honeycomb micropores are formed.
And S300, carrying out electrochemical treatment on the cleaned metal base material, and forming a hard insulating layer on the surface of the metal base material so as to insulate the surface of the metal base material.
And S400, coating an electric deposition layer on the surface of the hard insulating layer by utilizing chemical deposition, and removing the electric deposition layer by utilizing plasma cleaning.
And S500, plating a titanium alloy mesh layer on the surface of the hard insulating layer.
And S600, coating or electroplating a conductive layer on the surface of the titanium alloy mesh layer.
Specifically, through the implementation steps, the base plate which takes the metal base material as the base material, the surface of the base material is provided with the plurality of honeycomb micropores, and the base plate is sequentially provided with the hard insulating layer, the titanium alloy mesh layer, the conducting layer and the anti-oxidation layer from inside to outside can be produced.
In the present invention, further, the cleaning method of the impurities on the surface of the heat conducting plate in step S200 is plasma cleaning or argon atom impact cleaning.
In the present invention, the charge accumulating layer in step S400 is a potassium bromate solution.
In the present invention, further, the process of plating the titanium alloy mesh layer in step S500 is PVD vacuum chemical deposition.
In the present invention, step S600 is further to apply the conductive layer as a vacuum sputtering pure copper layer, and after the vacuum sputtering pure copper layer, vacuum plating gold on the surface of the pure copper layer.
In this example, after the step S200, the surface of the metal base material was electrochemically treated, and a first intergrowth permeation layer having a thickness of 2 μm to 5 μm was formed on the surface of the metal base material. The surface of the metal base material is subjected to electrochemical treatment, so that the metal base material and the hard insulating layer are mutually permeated to form mutual occlusion of a tooth-shaped structure, and the adhesive force between the metal base material and the hard insulating layer is effectively improved.
In this embodiment, after step S400, the surface of the hard insulating layer is electrochemically treated, and a second intergrown permeation layer is formed on the surface of the hard insulating layer. Effectively improve the adhesive force between the titanium alloy mesh layer and the hard insulating layer.
Specifically, the plasma cleaning and the argon atom cleaning can remove particles after micropore treatment of a metal base material, then the metal base material is used as an anode to be subjected to oxidation treatment, a hard insulating layer is formed on the surface of the metal base material, accumulated electricity formed on the surface after oxidation can be removed by a potassium bromate solution, a titanium alloy mesh layer and a conducting layer are sequentially coated, gold is plated finally, and pure copper oxidation of the conducting layer is prevented by taking the gold as an oxidation preventing layer.
Through the steps of the manufacturing method, the base plate which takes the metal base material as the base material, the surface of the base material is provided with the plurality of honeycomb micropores, and the base plate is sequentially provided with the hard insulating layer, the titanium alloy mesh layer, the conducting layer and the anti-oxidation layer from inside to outside can be produced.
In an embodiment of the present invention, as shown in fig. 4, a method for manufacturing a substrate circuit of a package substrate is provided, which includes the following steps:
and S100, polishing the surface of the substrate to expose the conductive layer.
And S200, attaching a dry film or smearing photosensitive blue oil on the surface of the substrate.
And S300, exposing and developing the substrate by using an alkaline developer.
And S400, etching the conductive layer by using alkaline etching liquid.
And S500, soaking the substrate in a film removing solution, and after soaking the substrate in the film removing solution for a period of time, brushing the substrate to remove the dry film or the photosensitive blue oil.
S600, soaking the base material in a titanium metal etching solution, and etching the titanium alloy mesh layer to expose the hard insulating layer.
And S700, removing the residual etching solution on the surface of the hard insulating layer.
And S800, baking the substrate to remove the moisture on the surface of the hard insulating layer.
Specifically, through the implementation steps, the electronic element circuits such as semiconductors and the like can be manufactured on the surfaces of the produced packaging substrates, a plurality of electronic elements such as semiconductors and the like are installed on the circuits, when the circuits are electrified, heat dissipation or heat absorption can be carried out through the substrates, and through the performance, the substrates can be applied to refrigeration or heating systems such as refrigerators and water dispensers or used for heat dissipation of circuit boards in the circuit boards, so that the use performance of electronic products is remarkably improved.
In the invention, in step S500, the membrane removing liquid is ethylene glycol monobutyl ether or methyl ethyl ketone, and the soaking time is 60S-180S.
In the present invention, the titanium metal etching solution described in step S600 is prepared by mixing a hydrofluoric acid solution having a solution concentration of 1% and a hydrochloric acid solution having a solution concentration of 3%.
In the present invention, the immersion time of the titanium metal etchant in step S600 is 50 to 70 seconds.
In the present invention, the method for removing the residual etching solution in step S700 is to perform water washing or water soaking for 4 to 6 min.
In the invention, further, in the step S800, the baking temperature is between 100 ℃ and 130 ℃, and the baking time is between 20min and 30 min.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.

Claims (10)

1. A package substrate, comprising: the metal substrate comprises a metal substrate, the surface of metal substrate is provided with a plurality of evenly spaced honeycomb micropores through nanometer micropore processing, one deck stereoplasm insulating layer has been plated on the surface of metal substrate, the stereoplasm insulating layer is used for insulating metal substrate, the surface of stereoplasm insulating layer is provided with one deck titanium alloy net layer, the surface of titanium alloy net layer is provided with one deck conducting layer.
2. The package substrate of claim 1, wherein: the metal substrate is made of aluminum alloy, the hard insulating layer is an aluminum oxide film, and the thickness of the aluminum oxide film is 25-50 mu m.
3. The package substrate of claim 1, wherein: the metal base material is made of pure copper materials, the hard insulating layer is an epoxy resin film, and the thickness of the epoxy resin film is 15-30 micrometers.
4. The package substrate according to any one of claims 1 to 3, wherein: and a first permeation symbiotic layer is arranged between the metal base material and the hard insulating layer, and the first permeation symbiotic layer is formed by mutually permeating and meshing the surface of the metal base material and the surface of the hard insulating layer.
5. The package substrate according to any one of claims 1 to 3, wherein: and a second permeation symbiotic layer is arranged between the hard insulating layer and the titanium alloy mesh layer, and is formed by mutually permeating and meshing the surface of the hard insulating layer and the surface of the titanium alloy mesh layer.
6. A method for manufacturing a package substrate, comprising: the method comprises the following steps:
and S100, carrying out micropore treatment on the surface of the metal base material to form honeycomb holes.
And S200, removing impurities on the surface of the metal base material after the honeycomb micropores are formed.
And S300, carrying out electrochemical treatment on the cleaned metal base material, and forming a hard insulating layer on the surface of the metal base material so as to insulate the surface of the metal base material.
And S400, coating an electric deposition layer on the surface of the hard insulating layer by utilizing chemical deposition, and removing the electric deposition layer by utilizing plasma cleaning.
And S500, plating a titanium alloy mesh layer on the surface of the hard insulating layer.
And S600, coating or electroplating a conductive layer on the surface of the titanium alloy mesh layer.
7. The method of manufacturing a package substrate according to claim 6, wherein: step S600, the step of coating the conductive layer is to vacuum sputter a pure copper layer, and after the pure copper layer is vacuum sputtered, vacuum plating an anti-oxidation layer on the surface of the pure copper layer.
8. The method of manufacturing a package substrate according to claim 6, wherein: after the step S200, performing electrochemical treatment on the surface of the metal base material, and forming a first infiltration symbiotic layer with the thickness of 2-5 microns on the surface of the metal base material.
9. The method of manufacturing a package substrate according to claim 6, wherein: after step S400, the surface of the hard insulating layer is electrochemically treated, and a second osmosis symbiotic layer is formed on the surface of the hard insulating layer.
10. A method for manufacturing a substrate circuit of a package substrate is characterized in that: the method comprises the following steps:
and S100, polishing the surface of the substrate to expose the conductive layer.
And S200, attaching a dry film or smearing photosensitive blue oil on the surface of the substrate.
And S300, exposing and developing the substrate by using an alkaline developer.
And S400, etching the conductive layer by using alkaline etching liquid.
S500, placing the substrate in ethylene glycol monobutyl ether or methyl ethyl ketone to be soaked for 60-180S, brushing the substrate, and removing the dry film or the photosensitive blue oil.
S600, soaking the base material in a titanium metal etching solution, and etching the titanium alloy mesh layer to expose the hard insulating layer.
And S700, removing the residual etching solution on the surface of the hard insulating layer.
And S800, baking the substrate to remove the moisture on the surface of the hard insulating layer.
CN202011475722.4A 2020-12-14 2020-12-14 Package substrate, method for manufacturing substrate, and method for manufacturing substrate circuit Pending CN112492745A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011475722.4A CN112492745A (en) 2020-12-14 2020-12-14 Package substrate, method for manufacturing substrate, and method for manufacturing substrate circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011475722.4A CN112492745A (en) 2020-12-14 2020-12-14 Package substrate, method for manufacturing substrate, and method for manufacturing substrate circuit

Publications (1)

Publication Number Publication Date
CN112492745A true CN112492745A (en) 2021-03-12

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Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
CN (1) CN112492745A (en)

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