CN214477328U - Ion source shielding device - Google Patents
Ion source shielding device Download PDFInfo
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- CN214477328U CN214477328U CN202120441660.9U CN202120441660U CN214477328U CN 214477328 U CN214477328 U CN 214477328U CN 202120441660 U CN202120441660 U CN 202120441660U CN 214477328 U CN214477328 U CN 214477328U
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- rectangular support
- ion source
- beam current
- correction block
- shaped hole
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Abstract
The utility model discloses an ion source shielding device, including the rectangular support, at least one long limit of rectangular support is equipped with a plurality of restraints and revises the piece, adjacent two the contact of restraint revision piece, each the restraint revision piece can be followed the minor face direction of rectangular support removes, the rectangular support with the restraint revision piece is non-magnetic material. According to the ion source shielding device, the rectangular support and the beam correction blocks are made of non-magnetic materials, the uniformity of ion beam processing can be improved, the beam correction blocks are installed on the rectangular support to form an overall correction shape, each beam correction block can move along the direction of the short side of the rectangular support, the overall correction shape of the beam correction block can be flexibly adjusted, and an ion beam is partially shielded by the beam correction blocks, so that the beam distribution of a workpiece bombarded by the rectangular ion source is adjusted, the uniformity of ion beam processing is improved, and the production efficiency is improved.
Description
Technical Field
The utility model relates to an ion beam machining technical field, concretely relates to ion source shield assembly.
Background
The ion beam processing technology is widely applied to the processes of sputtering coating, etching and the like in the fields of MEMS (micro electro Mechanical Systems) film sensors, microwave devices, optoelectronic devices and the like. The technology of an ion source serving as a core component in ion beam processing equipment is also continuously promoted, the ion source is classified according to the shape of an ion beam outlet, the ion source mainly comprises a circular ion source and a rectangular ion source, wherein the circular ion source has various problems of grid mesh deformation and the like along with the increasing of the caliber, and the grid mesh assembly is usually strengthened by some deformation-preventing designs on the long side of the rectangular ion source, so that the ion source is more and more applied to the processing of large-size substrates.
With the development of modern electronic devices towards high integration and low cost, the size of a substrate faced by ion beam processing is larger and larger, and the requirements on ion beam current area and uniformity are higher and higher. In order to meet the process requirements of electronic devices, the aperture of an ion source is continuously increased, and the requirement on the uniformity of ion beam current is also continuously improved, so that extremely high requirements are provided for the design and processing of the ion source, and particularly, the design of a series of component parameters influencing the uniformity of the ion source beam current, such as an ion source magnetic field, an ion optical grid mesh, a discharge chamber structure (comprising a cathode, an anode and a discharge chamber), and the like. The optimization of the ion source magnetic field and the structural design difficulty of the discharge chamber are high, the related theoretical research calculation and part development cost is high, the period is long, the ion optical grid is related to an arc grid, the die opening is needed, the processing cost is extremely high, and the manufacturing period is long.
SUMMERY OF THE UTILITY MODEL
The to-be-solved problem of the utility model is to overcome the not enough of prior art, provide a simple structure, convenient operation, low in manufacturing cost can promote the ion source shield assembly of ion beam processing homogeneity.
In order to solve the technical problem, the utility model adopts the following technical scheme: the ion source shielding device comprises a rectangular support, wherein at least one long edge of the rectangular support is provided with a plurality of beam current correcting blocks, every two adjacent beam current correcting blocks are in contact with each other, each beam current correcting block can move along the direction of the short edge of the rectangular support, and the rectangular support and the beam current correcting blocks are made of non-magnetic materials.
As a further improvement of the above technical solution: and beam current correcting blocks are arranged on two long sides of the rectangular support, and an ion beam channel is formed between the beam current correcting blocks on the two long sides.
As a further improvement of the above technical solution: the rectangular support comprises a correction block fixing plate arranged along a long edge, the beam correction block is arranged on the correction block fixing plate, the correction block fixing plate can move along the direction of the short edge of the rectangular support, and the correction block fixing plate is made of a non-magnetic material.
As a further improvement of the above technical solution: the correcting block fixing plate is provided with a first strip-shaped hole and is connected with the rectangular support through a fastener arranged in the first strip-shaped hole.
As a further improvement of the above technical solution: the first strip-shaped hole is a U-shaped hole, and the opening of the first strip-shaped hole faces the outer side of the rectangular support.
As a further improvement of the above technical solution: and the beam current correcting block is provided with a second strip-shaped hole and is connected with the rectangular support through a fastener arranged in the second strip-shaped hole.
As a further improvement of the above technical solution: the edge in second bar shape hole is equipped with the fillet and is U-shaped hole and opening orientation the outside of rectangular support.
As a further improvement of the above technical solution: the short side of the rectangular support is provided with a mounting hole.
Compared with the prior art, the beneficial effects of the utility model reside in that: according to the ion source shielding device, the rectangular support and the beam correction blocks are made of non-magnetic materials, the uniformity of ion beam processing can be improved, the beam correction blocks are installed on the rectangular support to form an overall correction shape, each beam correction block can move along the direction of the short side of the rectangular support, the overall correction shape of the beam correction block can be flexibly adjusted, and an ion beam is partially shielded by the beam correction blocks, so that the beam distribution of a workpiece bombarded by the rectangular ion source is adjusted, the uniformity of ion beam processing is improved, and the production efficiency is improved.
Drawings
Fig. 1 is a schematic structural diagram of the ion source shielding apparatus of the present invention.
Fig. 2 is a schematic structural diagram of the mechanism for correcting the state of the ion source shielding apparatus according to the present invention.
FIG. 3 is a schematic view of the ion source, ion source shielding device and substrate stage of the present invention.
The reference numerals in the figures denote: 1. a rectangular bracket; 11. an ion beam path; 12. a correction block fixing plate; 121. a first bar-shaped hole; 13. mounting holes; 2. a beam current correction block; 21. a second bar-shaped hole; 3. a shielding device; 4. a chamber; 5. a rectangular ion source; 6. a workpiece table.
Detailed Description
The invention is described in further detail below with reference to the drawings and specific examples.
Fig. 1 to fig. 3 show an embodiment of the utility model, the ion source shielding device of this embodiment, including rectangular support 1, rectangular support 1's at least one long edge is equipped with a plurality of beam current correction blocks 2, two adjacent beam current correction blocks 2 contacts, and each beam current correction block 2 can be followed rectangular support 1's minor face direction and removed, and rectangular support 1 and beam current correction block 2 are non-magnetic material.
According to the ion source shielding device, the rectangular support 1 and the beam correction blocks 2 are made of non-magnetic materials, the uniformity of ion beam processing can be improved, the beam correction blocks 2 are installed on the rectangular support 1 to form an overall correction shape, each beam correction block 2 can move along the direction of the short side of the rectangular support 1, the overall correction shape of the beam correction block 2 can be flexibly adjusted, an ion beam is partially shielded by the beam correction blocks 2, the beam distribution of a workpiece bombarded by the rectangular ion source 5 is adjusted, the uniformity of ion beam processing is improved, and the production efficiency is improved.
Further, in the present embodiment, the two long sides of the rectangular support 1 are provided with the beam correction blocks 2, and the beam channel 11 is formed between the beam correction blocks 2 on the two long sides. Each beam correction block 2 can move along the short side direction of the rectangular support 1, so that the width of the ion beam channel 11 is adjustable, two sides of the rectangular ion beam are partially shielded by the beam correction blocks 2, the beam distribution of the workpiece bombarded by the rectangular ion source 5 is further adjusted, the uniformity of ion beam processing is improved, and the production efficiency is improved.
Further, in this embodiment, the rectangular support 1 includes a correction block fixing plate 12 disposed along the long side, the beam correction block 2 is disposed on the correction block fixing plate 12, the correction block fixing plate 12 can move along the short side direction of the rectangular support 1, the overall correction shape of the beam correction block 2 on the adjustment plate can be conveniently adjusted, and the correction block fixing plate 12 is made of a non-magnetic material, so that the uniformity of ion beam processing can be improved.
Furthermore, in this embodiment, a first strip-shaped hole 121 is formed on the correction block fixing plate 12, and the correction block fixing plate 12 is connected to the rectangular bracket 1 through a fastener arranged in the first strip-shaped hole 121. The first strip-shaped hole 121 plays a role in positioning and guiding, the correction block fixing plate 12 can flexibly move along the short side direction of the rectangular support 1, and the overall correction shape of the beam correction block 2 on the adjusting plate is convenient.
Furthermore, in this embodiment, the first bar-shaped hole 121 is a U-shaped hole and the opening thereof faces the outside of the rectangular bracket 1, and the U-shaped hole facilitates the detachment and installation of the correction block fixing plate 12.
Further, in this embodiment, a second strip-shaped hole 21 is formed in the beam current modification block 2, and the beam current modification block 2 is connected to the modification block fixing plate 12 on the rectangular bracket 1 through a fastener arranged in the second strip-shaped hole 21. The second strip-shaped hole 21 plays a role in positioning and guiding, so that the beam current correcting block 2 can flexibly move along the short side direction of the rectangular support 1, and the correcting shape of the beam current correcting block 2 can be conveniently adjusted.
Furthermore, in this embodiment, the edge of the second bar-shaped hole 21 is provided with a U-shaped hole having a rounded corner, and the opening faces the outside of the rectangular bracket 1, and the U-shaped hole facilitates the assembly and disassembly of the beam correction block 2.
Further, in the present embodiment, the middle of the short side of the rectangular bracket 1 is provided with a mounting hole 13. The rectangular bracket 1 can be fixed on the ion source through a mounting hole 13, and the mounting hole 13 can also be used for mounting a bridge type neutralizer.
In a preferred embodiment, the rectangular ion source 5 is arranged in parallel with the workpiece stage 6, the shielding device 3 (the whole of the rectangular bracket 1, the correction block fixing plate 12 and the beam correction block 2) is positioned between the rectangular ion source 5 and the workpiece stage 6 and is parallel to the rectangular ion source 5 and the workpiece stage 6, the workpiece stage 6 drives a chain to scan repeatedly in a direction perpendicular to the long side direction of the rectangular ion source 5 through a motor, and the following method is adopted for adjusting the uniformity of the ion beam of the ion source along the long side direction:
s1, setting the initial mounting position of the correction block fixing plate 12: installing a correction block fixing plate 12 on a rectangular support 1, installing beam correction blocks 2 on the correction block fixing plate 12, keeping all the beam correction blocks 2 and the correction block fixing plate 12 away from an ion beam channel 11, enabling the width of the ion beam channel 11 to be maximum, testing the uniformity of the etched thickness after etching on a substrate, drawing a film etching thickness distribution diagram A, setting the maximum film etching thickness to be TAmax, the position corresponding to the maximum film etching thickness to be Amax, the minimum film etching thickness to be TAmin, the position corresponding to the minimum film etching thickness to be Amin, and setting the initial installation position of the correction block fixing plate 12 according to the etching film thickness distribution diagram A;
s2, adjusting the mounting position of the correction block fixing plate 12: adjusting the position of the correction block fixing plate 12, etching the substrate again, drawing a film etching thickness distribution diagram B, adjusting the position of the correction block fixing plate 12 twice according to the distribution diagram B, etching and drawing a film etching thickness distribution diagram C on the substrate, … … adjusting the position of the correction block fixing plate 12 for the Nth time (N is more than or equal to 1) until the calculated uniformity between the film etching thickness T A ' max and TA ' min of the corresponding Amax position in the film etching and drawing distribution diagram A ' on the substrate meets the requirement, and fixing the correction block fixing plate 12;
s3, adjusting the installation position of the beam current correction block 2: adjusting the position of the beam current correction block 2 according to a film etching thickness distribution diagram A 'formed by etching on the substrate, etching again to form a film etching thickness distribution diagram B' on the substrate, adjusting the position of the beam current correction block 2 for the second time according to the film thickness distribution diagram B ', etching to form a film etching thickness distribution diagram C' on the substrate, and adjusting the position of the beam current correction block 2 for the Nth time (N is more than or equal to 1) … … until the required etching area meets the etching uniformity requirement, and fixing the beam current correction block 2.
When the ion beam channel 11 is in the maximum width state, the beam correction block 2 does not shield the rectangular ion beam for etching the substrate, the etching uniformity vertical to the scanning direction of the substrate is 9.6%, the position of the correction block fixing plate 12 is adjusted and fixed according to an etching uniformity distribution diagram, then the position of the beam correction block 2 is adjusted and fixed, and the etching uniformity corresponding to the overall correction shape of the finally adjusted beam correction block 2 is 3.8%.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to limit the present invention. The technical solution of the present invention can be used by anyone skilled in the art to make many possible variations and modifications, or to modify equivalent embodiments, without departing from the scope of the technical solution of the present invention, using the technical content disclosed above. Therefore, any simple modification, equivalent change and modification made to the above embodiments by the technical entity of the present invention should fall within the protection scope of the technical solution of the present invention.
Claims (8)
1. An ion source shielding device, comprising: the beam current correction device comprises a rectangular support (1), wherein at least one long edge of the rectangular support (1) is provided with a plurality of beam current correction blocks (2), every two adjacent beam current correction blocks (2) are in contact, each beam current correction block (2) can move along the direction of the short edge of the rectangular support (1), and the rectangular support (1) and the beam current correction blocks (2) are made of non-magnetic materials.
2. The ion source shielding apparatus of claim 1, wherein: beam current correction blocks (2) are arranged on two long sides of the rectangular support (1), and an ion beam channel (11) is formed between the beam current correction blocks (2) on the two long sides.
3. The ion source shielding apparatus of claim 1, wherein: the beam current correction device is characterized in that the rectangular support (1) comprises a correction block fixing plate (12) arranged along a long edge, the beam current correction block (2) is arranged on the correction block fixing plate (12), the correction block fixing plate (12) can move along the short edge direction of the rectangular support (1), and the correction block fixing plate (12) is made of a non-magnetic material.
4. The ion source shielding apparatus of claim 3, wherein: the correction block fixing plate (12) is provided with a first strip-shaped hole (121), and the correction block fixing plate (12) is connected with the rectangular support (1) through a fastener arranged in the first strip-shaped hole (121).
5. The ion source shielding apparatus of claim 4, wherein: the first strip-shaped hole (121) is a U-shaped hole, and the opening of the first strip-shaped hole faces the outer side of the rectangular support (1).
6. The ion source shielding apparatus of claim 1, wherein: and a second strip-shaped hole (21) is formed in the beam current correcting block (2), and the beam current correcting block (2) is connected with the rectangular support (1) through a fastener arranged in the second strip-shaped hole (21).
7. The ion source shielding apparatus of claim 6, wherein: the edge of the second strip-shaped hole (21) is provided with a round corner which is a U-shaped hole and the opening of the round corner faces the outer side of the rectangular support (1).
8. The ion source shielding apparatus of any of claims 1 to 7, wherein: the short side of the rectangular support (1) is provided with a mounting hole (13).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120441660.9U CN214477328U (en) | 2021-03-01 | 2021-03-01 | Ion source shielding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120441660.9U CN214477328U (en) | 2021-03-01 | 2021-03-01 | Ion source shielding device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214477328U true CN214477328U (en) | 2021-10-22 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120441660.9U Active CN214477328U (en) | 2021-03-01 | 2021-03-01 | Ion source shielding device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN214477328U (en) |
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2021
- 2021-03-01 CN CN202120441660.9U patent/CN214477328U/en active Active
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