CN214175968U - Semiconductor component and plasma processing apparatus - Google Patents
Semiconductor component and plasma processing apparatus Download PDFInfo
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- CN214175968U CN214175968U CN202023023176.9U CN202023023176U CN214175968U CN 214175968 U CN214175968 U CN 214175968U CN 202023023176 U CN202023023176 U CN 202023023176U CN 214175968 U CN214175968 U CN 214175968U
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Abstract
A semiconductor component and a plasma processing apparatus, wherein the semiconductor component includes: a component body; the composite coating is positioned on the surface of the part body and comprises a first corrosion-resistant coating and a second corrosion-resistant coating which are overlapped, wherein the grain size of the first corrosion-resistant coating is larger than that of the second corrosion-resistant coating, and the second corrosion-resistant coating is used for inhibiting the grain growth size of the first corrosion-resistant coating. The outermost layer of the composite coating and the part body in contact are both first corrosion-resistant coatings, and the semiconductor part can resist corrosion of plasma and can reduce particle pollution.
Description
Technical Field
The utility model relates to a semiconductor field especially relates to a semiconductor spare part and plasma processing apparatus.
Background
In the manufacturing process of semiconductor devices, plasma etching is a critical process for processing a wafer into a design pattern.
In a typical plasma etch process, a process gas (e.g., CF)4、O2Etc.) are excited by Radio Frequency (RF) excitation to form a plasma. The plasmas have physical bombardment effect and chemical reaction with the surface of the wafer after the action of an electric field (capacitive coupling or inductive coupling) between the upper electrode and the lower electrode, so that the wafer with a specific structure is etched.
However, during the plasma etching process, the physical bombardment and chemical reaction also act on all semiconductor parts in the etching chamber, which are in contact with the plasma, to cause corrosion, so there is an urgent need to prepare a corrosion-resistant coating with excellent performance on the surface of the part body to resist the corrosion of the plasma, and to reduce the particle contamination problem.
SUMMERY OF THE UTILITY MODEL
The utility model provides a technical problem provide a semiconductor spare part and plasma processing apparatus to improve plasma-resistant corrosive ability, and can reduce the particle pollution problem.
In order to solve the above technical problem, the utility model provides a semiconductor component, include: a component body; the composite coating is positioned on the surface of the part body and comprises a first corrosion-resistant coating and a second corrosion-resistant coating which are alternately arranged, the grain size of the first corrosion-resistant coating is larger than that of the second corrosion-resistant coating, the outermost layer of the composite coating and the part body are both the first corrosion-resistant coating, and the second corrosion-resistant coating is used for inhibiting the grain growth size of the first corrosion-resistant coating. Optionally, the first corrosion-resistant coating and the second corrosion-resistant coating are made of the same or different materials.
Optionally, the first and second corrosion-resistant coatingsThe layer is a crystalline composite compound of a rare earth element with oxygen and fluorine, the crystalline composite compound of the rare earth element with oxygen and fluorine comprising: YOF, Y5O4F7,Y6O5F8,Y7O6F9,Y17O14F23,LaOF,CeOF,CeO6F2,PrOF,NdOF,SmOF,EuOF,Eu3O2F5,Eu5O4F7,GdOF,Gd5O4F7,TbOF,DyOF,HoOF,ErOF,Er3O2F5,Er5O4F7,TmOF,YbOF,Yb5O4F7,Yb6O5F8,LuOF,Lu3O2F5,Lu5O4F7Or Lu7O6F9At least one of (1).
Optionally, the first corrosion-resistant coating and the second corrosion-resistant coating are crystalline composite compounds formed by rare earth elements and aluminum oxide, and the crystalline composite compounds formed by the rare earth elements and the aluminum oxide include: y is4Al2O9,YAlO3,Y3Al5O12,LaAlO3,CeAlO3,Ce6AlO3,Pr4Al2O9,PrAlO3,PrAl11O18,Nd4Al2O9,NdAlO3,NdAl11O18,Sm4Al2O9,SmAlO3,Eu4Al2O9,EuAlO3,Eu3Al5O12,Gd4Al2O9,GdAlO3,Gd3Al5O12,Tb4Al2O9,TbAlO3,Tb3Al5O12,Dy4Al2O9,DyAlO3,Dy3Al5O12,Ho4Al2O9,HoAlO3,Ho3Al5O12,Er4Al2O9,ErAlO3,Er3Al5O12,Tm4Al2O9,TmAlO3,Tm3Al5O12,Yb4Al2O9,Yb6Al10O24,Lu4Al2O9,LuAlO3Or Lu3Al5O12At least one of (1).
Optionally, the first corrosion-resistant coating and the second corrosion-resistant coating are crystalline composite compounds formed by rare earth elements and silicon oxide, and the crystalline composite compounds formed by the rare earth elements and the silicon oxide include: y is2SiO5,Y2Si2O7,La2SiO5,La2Si2O7,Ce2SiO5,Pr2SiO5,Pr2Si2O7,Nd2SiO5,Nd4Si3O12,Nd2Si2O7,Sm2SiO5,Sm4Si3O12,Sm2Si2O7,Eu2SiO5,EuSiO3,Eu2Si2O7,Gd2SiO5,Gd4Si3O12,Gd2Si2O7,Tb2SiO5,Tb2Si2O7,Dy2SiO5,Dy4Si3O12,Dy2Si2O7,Ho2SiO5,Er2Si2O7,Er2SiO5,Er4Si3O12,Er2Si2O7,Tm2SiO5,Tm2Si2O7,Yb2SiO5,Yb4Si3O12,Yb2Si2O7,Lu2SiO5,Lu4Si3O12Or Lu2Si2O7At least one of (1).
Optionally, the first corrosion-resistant coating and the second corrosion-resistant coating areCrystalline oxides of rare earth metals including LaO, La2O3,CeO,Ce2O3,CeO2,PrO,Pr2O3,Pr6O11,PrO2,NdO,Nd2O3,SmO,Sm2O3,EuO,Eu2O3,Gd2O3,Tb2O3,Tb4O7,TbO2,Dy2O3,Ho2O3,Er2O3,Tm2O3,YbO,Yb2O3Or Lu2O3At least one of (1).
Optionally, the first and second corrosion-resistant coatings are crystalline fluorides of rare earth metals including YF3,LaF3,CeF3,CeF4,PrCl3,PrCl4,NdF3,SmF2,SmF3,EuF2,EuF3,GdF3,TbF3,TbF4,DyF3,HoF3,ErF3,TmF2,TmF3,YbF3Or LuF3At least one of (1).
Optionally, the crystal grains of the first corrosion-resistant coating are columnar crystal grains; the crystal grains of the second corrosion-resistant coating are fine-grained crystal grains.
Optionally, the grain width direction size of the first corrosion-resistant coating is greater than 100 nm; the second corrosion-resistant coating has a grain width dimension of less than 100 nanometers.
Optionally, the thickness of the first corrosion-resistant coating is 10 nm to 5000 nm; the thickness of the second corrosion-resistant coating is 1-100 nanometers.
Optionally, the first corrosion-resistant coating and the second corrosion-resistant coating are of a crystalline structure or an amorphous structure.
Correspondingly, the utility model also provides a plasma processing apparatus, include: a reaction chamber, wherein a plasma environment is arranged in the reaction chamber; the semiconductor parts are positioned in the reaction cavity and exposed to the plasma environment.
Optionally, the plasma environment comprises at least one of fluorine, chlorine, oxygen, or hydrogen plasma.
Optionally, the plasma processing apparatus is a plasma etching apparatus or a plasma cleaning apparatus.
Optionally, when the plasma processing apparatus is an inductively coupled plasma processing apparatus, the component parts include: at least one of a ceramic plate, an inner liner, a gas nozzle, a gas distribution plate, a gas pipe flange, an electrostatic chuck assembly, a cover ring, a focus ring, an insulating ring, or a plasma confinement device.
Optionally, when the plasma processing apparatus is a capacitively-coupled plasma processing apparatus, the component parts include: at least one of a showerhead, an upper ground ring, a moving ring, a gas distribution plate, a gas baffle plate, an electrostatic chuck assembly, a lower ground ring, a cover ring, a focus ring, an insulator ring, or a plasma confinement device.
Compared with the prior art, the utility model discloses technical scheme has following beneficial effect:
the utility model discloses in the semiconductor parts that technical scheme provided, the surface of parts body has composite coating, composite coating includes first corrosion-resistant coating and second corrosion-resistant coating, the grain size of first corrosion-resistant coating is greater than the grain size of second corrosion-resistant coating, second corrosion-resistant coating is used for restraining the grain growth of first corrosion-resistant coating, prevents to produce big crystalline grain in the first corrosion-resistant coating, like this, semiconductor parts exposes in the plasma environment, is difficult for making the large granule take place to drop along big crystalline grain edge diffusion, consequently, is favorable to reducing particle pollution to satisfy the processing procedure requirement better. In addition, the composite coating in contact with the part body is a first corrosion-resistant coating, the bonding force between the first corrosion-resistant coating and the part body is stronger, the outermost layer of the composite coating is the first corrosion-resistant coating, the grain size of the first corrosion-resistant coating is larger than that of the second corrosion-resistant coating, the first corrosion-resistant coating has stronger corrosion resistance, and the corrosion resistance of the part body against plasma can be improved.
Drawings
Fig. 1 is a schematic structural view of a plasma processing apparatus according to the present invention;
FIG. 2 is a schematic structural view of another plasma processing apparatus according to the present invention;
fig. 3 is a schematic structural view of a semiconductor component according to the present invention;
figure 4 is a schematic view of the apparatus for physical vapor deposition process of the present invention.
Detailed Description
As described in the background art, there is a strong need to prepare a corrosion-resistant coating with excellent performance on the surface of the component body to resist the corrosion of plasma and reduce the particle contamination problem, and for this reason, the present invention is directed to provide a semiconductor component and a plasma processing apparatus, wherein the semiconductor component has strong corrosion resistance in the plasma environment and can reduce the particle contamination problem, and the following detailed description is made:
fig. 1 is a schematic structural diagram of a plasma processing apparatus according to the present invention.
Referring to fig. 1, the plasma reaction apparatus includes: the reaction chamber 100 is a plasma environment inside the reaction chamber 100, and the semiconductor component and the inner chamber wall of the reaction chamber 100 are exposed to the plasma environment, wherein the plasma includes at least one of a F-containing plasma, a Cl-containing plasma, an H-containing plasma, or an O-containing plasma.
The plasma reaction device further includes: the plasma processing apparatus comprises a base 101, wherein an electrostatic chuck 103 is arranged above the base 101, an electrode (not shown) is arranged in the electrostatic chuck 103, the electrode is connected with a direct current power supply DC and used for generating electrostatic adsorption to fix a substrate W to be processed, and plasma is used for processing the substrate W to be processed. Since plasma has strong corrosiveness, in order to prevent the surface of the semiconductor component exposed to the plasma environment from being corroded by the plasma, it is necessary to coat the surface of the component body with a composite coating.
In this embodiment, the plasma reaction device is a capacitively coupled plasma reaction device, and accordingly, the semiconductor component exposed to the plasma environment includes: at least one of a showerhead 102, an upper ground ring 104, a moving ring, a gas distribution plate 105, a gas baffle plate, an electrostatic chuck assembly 103, a lower ground ring 106, a cover ring 107, a focus ring 108, an insulator ring, and a plasma confinement device 109.
Fig. 2 is a schematic structural diagram of another plasma processing apparatus according to the present invention.
In this embodiment, the plasma reaction device is an inductively coupled plasma reaction device, and accordingly, the semiconductor component exposed to the plasma environment includes: at least one of a ceramic plate, an inner liner 200, a gas nozzle 201, a gas distribution plate, a gas pipe flange, an electrostatic chuck assembly 202, a cover ring 203, a focus ring 204, an insulating ring, and a plasma confinement device 205.
In the plasma etching process, physical bombardment and chemical reaction also act on all semiconductor parts in the reaction chamber, which are in contact with the plasma, to corrode the semiconductor parts, and the surface structure of the semiconductor parts is damaged after being exposed to the plasma corrosion environment for a long time, so that the precipitation of body components is caused, and the body components are separated from the surface to form micro particles, thereby polluting the wafer. The semiconductor system has severe requirements for micro particle contamination, for example, the number of particles larger than 45nm is 0, and therefore, a composite coating needs to be coated on the surface of a component body in a plasma reaction device to resist the corrosion of plasma.
The semiconductor components are explained in detail below:
fig. 3 is a schematic structural diagram of a semiconductor component according to the present invention.
Referring to fig. 3, the semiconductor component includes: a component body 300; the composite coating 301 is positioned on the surface of the component body 300 and comprises a first corrosion-resistant coating 301a and a second corrosion-resistant coating 301b which are alternately arranged, the grain size of the first corrosion-resistant coating 301a is larger than that of the second corrosion-resistant coating 301b, the outermost layer of the composite coating 301 and the component body 300 are both the first corrosion-resistant coating 301a, and the second corrosion-resistant coating 301b is used for inhibiting the grain growth size of the first corrosion-resistant coating 301 a.
The material of the component body 300 includes: at least one of aluminum alloy, silicon carbide, silicon, quartz, ceramic, or the like.
The surface of the component body 300 is provided with the composite coating 301, and when the semiconductor component is exposed to a plasma environment, the composite coating 301 has strong corrosion resistance, so that the composite coating 301 can protect the component body 300, prevent the component body 300 from being corroded by plasma, and is beneficial to prolonging the service life of the semiconductor component.
The composite coating 301 comprises a first corrosion-resistant coating 301a and a second corrosion-resistant coating 301b, wherein the materials of the first corrosion-resistant coating 301a and the second corrosion-resistant coating 301b are the same or different, and when the materials of the first corrosion-resistant coating 301a and the second corrosion-resistant coating 301b are different, the materials are replaced after the first corrosion-resistant coating 301a is formed, so that the second corrosion-resistant coating 301b with the different materials from the first corrosion-resistant coating 301a is formed.
The first corrosion-resistant coating 301a and the second corrosion-resistant coating 301b are of a crystalline structure or an amorphous structure.
In one embodiment, the first and second corrosion- resistant coatings 301a and 301b are crystalline composite compounds of a rare earth element with oxygen and fluorine, including: YOF, Y5O4F7,Y6O5F8,Y7O6F9,Y17O14F23LaOF (lanthanum oxyfluoride), CeOF, CeO6F2PrOF (praseodymium oxyfluoride), NdOF (neodymium oxyfluoride), SmOF (samarium oxyfluoride), EuOF (europium oxyfluoride), Eu3O2F5,Eu5O4F7GdOF (gadolinium oxyfluoride), Gd5O4F7TbOF (terbium oxyfluoride), DyOF (dysprosium oxyfluoride), HoOF (holmium oxyfluoride), ErOF (erbium oxyfluoride), Er3O2F5,Er5O4F7TmOF (thulium oxyfluoride), YbOF (ytterbium oxyfluoride), Yb5O4F7,Yb6O5F8LuOF (lutetium oxyfluoride), Lu3O2F5,Lu5O4F7Or Lu7O6F9At least one of (1).
In another embodiment, the first corrosion-resistant coating 301a and the second corrosion-resistant coating 301b are crystalline composite compounds of a rare earth element and alumina, and the crystalline composite compounds of the rare earth element and alumina include: y is4Al2O9、YAlO3、Y3Al5O12,LaAlO3,CeAlO3(cerium aluminum oxide), Ce6AlO3,Pr4Al2O9(praseodymium aluminum oxide), PrAlO3,PrAl11O18,Nd4Al2O9,NdAlO3(Neodymium aluminum oxygen), NdAl11O18,Sm4Al2O9(samarium-aluminum-oxygen), SmAlO3,Eu4Al2O9(europium aluminum oxide) EuAlO3、Eu3Al5O12,Gd4Al2O9(gadolinium oxy aluminum), GdAlO3、Gd3Al5O12,Tb4Al2O9(terbium aluminum oxide), TbAlO3、Tb3Al5O12,Dy4Al2O9(dysprosium aluminum oxygen), DyAlO3、Dy3Al5O12,Ho4Al2O9(holmium aluminum oxygen), HoAlO3、Ho3Al5O12,Er4Al2O9(erbium aluminum oxide) and ErAlO3、Er3Al5O12,Tm4Al2O9(thulium aluminum oxide), TmAlO3、Tm3Al5O12,Yb4Al2O9Ytterbium aluminum oxide and Yb6Al10O24,Lu4Al2O9(Lu-Al-O), LuAlO3Or Lu3Al5O12At least one of (1).
In yet another embodiment, the first and second corrosion- resistant coatings 301a and 301b are crystalline composite compounds of a rare earth element and silicon oxide, including: y is2SiO5,Y2Si2O7,La2SiO5(lanthanum silicon oxygen), La2Si2O7,Ce2SiO5(cerium silicon oxide), Pr2SiO5(praseodymium silicon oxygen), Pr2Si2O7,Nd2SiO5(neodymium siloxane), Nd4Si3O12,Nd2Si2O7,Sm2SiO5(samarium Si-O), Sm4Si3O12,Sm2Si2O7,Eu2SiO5(europium silica), EuSiO3,Eu2Si2O7,Gd2SiO5(gadolinium oxy-siloxane), Gd4Si3O12,Gd2Si2O7,Tb2SiO5(terbium silicon oxide), Tb2Si2O7,Dy2SiO5(Dy Si O), Dy4Si3O12,Dy2Si2O7,Ho2SiO5(holmium)
Silica), Er2Si2O7(erbium silica), Er2SiO5,Er4Si3O12,Er2Si2O7,Tm2SiO5(Thulium)
Siloxane), Tm2Si2O7,Yb2SiO5,Yb4Si3O12,Yb2Si2O7,Lu2SiO5,Lu4Si3O12Or Lu2Si2O7At least one of (1).
In yet another embodiment, the first and second corrosion- resistant coatings 301a, 301b are crystalline oxides of rare earth metals including LaO, La2O3,CeO,Ce2O3,CeO2,PrO,Pr2O3,Pr6O11,PrO2,NdO,Nd2O3,SmO,Sm2O3,EuO,Eu2O3,Gd2O3,Tb2O3,Tb4O7,TbO2,Dy2O3,Ho2O3,Er2O3,Tm2O3,YbO,Yb2O3Or Lu2O3At least one of (1).
In other embodiments, the first and second corrosion-resistant coatings are crystalline fluorides of rare earth metals including YF3,LaF3,CeF3,CeF4,PrCl3,PrCl4,NdF3,SmF2,SmF3,EuF2,EuF3,GdF3,TbF3,TbF4,DyF3,HoF3,ErF3,TmF2,TmF3,YbF3Or LuF3At least one of (1).
In the process of forming the first corrosion-resistant coating 301a, due to the cumulative effect of thermal effects, when the first corrosion-resistant coating 301a is deposited to a certain thickness, the molecular flow breaks through the nucleation energy barrier to nucleate in a large amount, rapidly aggregate and grow, and abnormally large grains are randomly generated. In order to prevent the generation of abnormally large grains, in the present implementation, the thickness of the first corrosion-resistant coating 301a ranges from: 10 to 5000 nanometers. In the thickness range of the first corrosion-resistant coating 301a, the first corrosion-resistant coating 301a is not easy to generate large grains, and the grains of the first corrosion-resistant coating 301a are columnar grains. The crystal grain size of the second corrosion-resistant coating 301b is larger than that of the first corrosion-resistant coating 301a, and therefore, the second corrosion-resistant coating 301b can be used to suppress the first corrosion-resistant coating 301a from generating large crystal grains. Specifically, the crystal grains of the second corrosion-resistant coating 301b are fine-grained crystal grains, and the thickness of the second corrosion-resistant coating 301b is 1 nm to 100 nm.
The significance of selecting the thickness of the second corrosion-resistant coating 301b is: if the thickness of the second corrosion-resistant coating 301b is less than 1 nanometer, the second corrosion-resistant coating 301b is difficult to inhibit the generation of large grains in the first corrosion-resistant coating 301a, if large grains are generated in the first corrosion-resistant coating 301a, the large grains are preferentially corroded, and the plasma performs infiltration corrosion along the grain boundary between the large grains and the surrounding grains to destroy the combination of the large grains and the surrounding grains, when the critical combination strength is exceeded, large grains fall off to form micro-particle pollutants, and the micro-particle pollutants are scattered in the etching cavity and cannot better meet the process requirements; if the thickness of the second corrosion-resistant coating 301b is greater than 100 nm, abrupt changes in the corrosion-resistant performance of the first corrosion-resistant coating 301a and the second corrosion-resistant coating 301b may be caused, resulting in unstable performance.
In the present embodiment, the grain size of the first corrosion-resistant coating 301a is larger than that of the second corrosion-resistant coating 301b, specifically, the grain width direction size of the first corrosion-resistant coating 301a is larger than 100 nm; the second corrosion-resistant coating 301b has a grain width direction dimension of less than 100 nm. The significance of this arrangement is: the second corrosion-resistant coating 301b can not only play a role in limiting abnormal growth of large particles in the first corrosion-resistant coating 301a, but also maintain the stable transition of the corrosion-resistant effects of the first corrosion-resistant coating 301a and the second corrosion-resistant coating 301b, and maintain the stability of the environment in the reaction chamber.
In the present embodiment, the first corrosion-resistant coating 301a is distributed on the surface of the component body 300 and the surface of the composite coating 301, and the significance of this arrangement is that: the crystal grains of the first corrosion-resistant coating 301a are columnar crystals, the crystal grains are larger, and the bonding strength with the part body 300 is higher than that of the fine crystal grains, so that the composite coating 301a is used as a first layer bonded with the part body 300, so that the bonding strength between the whole composite coating 301 and the part body 300 is higher; meanwhile, the crystal grains of the first corrosion-resistant coating 301a are columnar crystals, the crystal grains are larger, and compared with fine crystal grains, the crystal grains have fewer crystal boundaries and better corrosion-resistant effect, so that the first corrosion-resistant coating 301a is used as a coating on the outermost surface of the composite coating 301 and fully exerts the corrosion-resistant effect.
Figure 4 is a schematic view of the apparatus for physical vapor deposition process of the present invention.
Referring to fig. 4, the apparatus for physical vapor deposition process includes: a vacuum chamber 400; a target 401 located at the bottom of the vacuum chamber 400; a component body 300 located in the vacuum chamber 400 and disposed opposite to the target 401; and an excitation device 402 for exciting atoms in the target 401 to form the composite coating 301 on the surface of the component body 300.
In one embodiment, the principle of forming the composite coating 301 by changing the temperature of the component body 300 includes: when the heating temperature of the component body 300 is lower than the melting point T of the composite coating 301m1/3, the growth of the composite coating 301 is limited by the diffusion of molecular flow on the surface of the component body 300, showing a finely divided grain growth pattern; when the temperature of the component body 300 is higher than the melting point T of the composite coating 301m1/3, a columnar grain growth pattern is exhibited by the diffusion of molecular flow on the surface of the precipitate.
The apparatus for a physical vapor deposition process further comprises: and an auxiliary enhancement source (not shown in the figure) for increasing the diffusion of the molecular flow on the surface of the component body, and the auxiliary enhancement source can reduce the temperature of the component body 300 and improve the deposition morphology of the composite coating 301. Wherein the auxiliary enhancement source comprises: at least one of a plasma source, an ion beam source, a microwave source, or a radio frequency source.
With Y2O3For example, 800 degrees Celsius without an auxiliary enhancing source<T1<1200 degree Celsius, T2<800 ℃; under the condition of an auxiliary reinforcing source, the heating temperature of the part body can be greatly reduced, T1<300 deg.C, T2<200 degrees celsius.
In another embodiment, the method for forming the composite coating 301 on the surface of the component body 300 includes: using the auxiliary enhancing source to make the power of the auxiliary enhancing source be the first power P1Then, the first corrosion-resistant coating 301a is formed on the surface of the component body 300; after the first corrosion-resistant coating 301a is formed, the first corrosion-resistant coating is formed, using the auxiliary enhancement source,the power of the auxiliary enhancing source is made to be the second power P2And a second power P2First power P less than 1/21A second corrosion-resistant coating 301b is formed on the surface of the first corrosion-resistant coating 301a, and the auxiliary enhancing source is made to operate at the first power P after a plurality of cycles1And a second power P2And the composite coating 301 is formed, wherein the composite coating 301 comprises a first corrosion-resistant coating 301a and a second corrosion-resistant coating 301b which are stacked alternately in a plurality of layers. With Y2O3For example, the first power P is applied under the condition of the plasma auxiliary enhancing source1At 6kw, a second power P2And may be 1kw or less.
In yet another embodiment, the method of forming the composite coating 301 on the surface of the component body 300 includes: the deposition rate is set to a first rate V by adjusting the excitation energy of the target 4011A first corrosion-resistant coating 301a is formed on the surface of the component body 300; after the first corrosion-resistant coating 301a is formed, the deposition rate is set to a second rate V by adjusting the excitation energy of the target 4012A second corrosion-resistant coating 301b is formed on the surface of the first corrosion-resistant coating 301a, and the deposition rate is made to be at the first rate V through a plurality of cycles1And a second rate V2And the composite coating 301 is formed, wherein the composite coating 301 comprises a first corrosion-resistant coating 301a and a second corrosion-resistant coating 301b which are stacked alternately in a plurality of layers.
The principle of forming the first corrosion-resistant coating 301a and the second corrosion-resistant coating 301b by adjusting the deposition rate by adjusting the excitation energy of the target includes: when the molecular flow excited by the target 401 is in a supersaturated deposition environment, sufficient molecules nucleate and grow in the growth process of the crystal grains, so that the first corrosion-resistant coating 301a of a columnar crystal form is formed; when the molecular flow excited by the target 401 is in an undersaturated deposition environment, the growth process of the crystal grains is limited by the number of molecular nucleation and can only be performed in a fine-grained crystal grain growth manner, that is: a second corrosion-resistant coating 301b of fine crushed crystals is formed.
With Y2O3For example, form the firstA first rate V of the corrosion-resistant coating 301a1A second rate V at which the second corrosion-resistant coating 301b is formed is between 0.5 nm/sec and 5 nm/sec2At 0.01 nm/s to 0.3 nm/s.
The principle that the second corrosion-resistant coating 301b can exert the function of limiting the grain growth of the first corrosion-resistant coating 101 includes: during the physical vapor deposition process, the excited molecular flow is transported to the surface of the component body 300, nucleated and grown, forming the first corrosion-resistant coating 301 a. In these processes, the molecular flow of the first corrosion-resistant coating 101 grows on the component body 300 in a columnar manner, and the crystallization heat effect is accumulated continuously, so that the barrier required by nucleation and growth of the subsequently reached molecular flow is reduced continuously, and when the barrier is reduced below a critical value, crystal grains are generated, and the crystal grains are rapidly generated to form crystal nuclei and grow up, so that abnormally large crystal grains are formed. Before reaching the critical value, the change of the growth mode of the molecular flow on the part body 300 from the columnar grain mode to the fine grain mode is realized by regulating and controlling the environmental conditions required by the molecular flow nucleation and growth mode, such as the temperature of the part body, the energy of the auxiliary enhancement source, the deposition rate and the like, so that the generation of random large particles is reduced.
Although the present invention is disclosed above, the present invention is not limited thereto. Without departure, by any person skilled in the art. Various changes and modifications can be made within the spirit and scope of the present invention, and the scope of the present invention should be limited only by the appended claims.
Claims (11)
1. A semiconductor component, comprising:
a component body;
the composite coating is positioned on the surface of the part body and comprises a first corrosion-resistant coating and a second corrosion-resistant coating which are alternately arranged, the grain size of the first corrosion-resistant coating is larger than that of the second corrosion-resistant coating, the outermost layer of the composite coating and the part body are both the first corrosion-resistant coating, and the second corrosion-resistant coating is used for inhibiting the grain growth size of the first corrosion-resistant coating.
2. The semiconductor component of claim 1, wherein the first corrosion-resistant coating is the same or different material than the second corrosion-resistant coating.
3. The semiconductor component according to claim 1, wherein the crystal grains of the first corrosion-resistant coating are columnar crystal grains; the crystal grains of the second corrosion-resistant coating are fine-grained crystal grains.
4. The semiconductor component of claim 1, wherein the first corrosion-resistant coating has a grain width-wise dimension greater than 100 nanometers; the second corrosion-resistant coating has a grain width dimension of less than 100 nanometers.
5. The semiconductor component according to claim 1, wherein the first corrosion-resistant coating has a thickness of 10 nm to 5000 nm; the thickness of the second corrosion-resistant coating is 1-100 nanometers.
6. The semiconductor component of claim 1, wherein the first and second corrosion-resistant coatings are crystalline or amorphous.
7. A plasma processing apparatus, comprising:
a reaction chamber, wherein a plasma environment is arranged in the reaction chamber;
the semiconductor component according to any one of claims 1 to 6, located in the reaction chamber, exposed to the plasma environment.
8. The plasma processing apparatus of claim 7, wherein the plasma environment comprises at least one of a fluorine, chlorine, oxygen, or hydrogen plasma.
9. The plasma processing apparatus according to claim 7, wherein the plasma processing apparatus is a plasma etching apparatus or a plasma cleaning apparatus.
10. The plasma processing apparatus as claimed in claim 9, wherein when the plasma processing apparatus is an inductively coupled plasma processing apparatus, the component parts include: at least one of a ceramic plate, an inner liner, a gas nozzle, a gas distribution plate, a gas pipe flange, an electrostatic chuck assembly, a cover ring, a focus ring, an insulating ring, or a plasma confinement device.
11. The plasma processing apparatus as claimed in claim 9, wherein when the plasma processing apparatus is a capacitively-coupled plasma processing apparatus, the component parts include: at least one of a showerhead, an upper ground ring, a moving ring, a gas distribution plate, a gas baffle plate, an electrostatic chuck assembly, a lower ground ring, a cover ring, a focus ring, an insulator ring, or a plasma confinement device.
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| CN202023023176.9U CN214175968U (en) | 2020-12-15 | 2020-12-15 | Semiconductor component and plasma processing apparatus |
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| CN202023023176.9U CN214175968U (en) | 2020-12-15 | 2020-12-15 | Semiconductor component and plasma processing apparatus |
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