CN213878367U - Three-dimensional integrated power amplifier assembly - Google Patents
Three-dimensional integrated power amplifier assembly Download PDFInfo
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- CN213878367U CN213878367U CN202120059091.1U CN202120059091U CN213878367U CN 213878367 U CN213878367 U CN 213878367U CN 202120059091 U CN202120059091 U CN 202120059091U CN 213878367 U CN213878367 U CN 213878367U
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Abstract
A three-dimensional integrated power amplifier assembly, comprising: the waveguide synthesis networks are in a pair and comprise upper cavities and lower cavities; the power amplifier modules are four in number, are arranged between the waveguide synthesis networks and comprise synthesizers, and a pair of power amplifier components are arranged on two sides of each synthesizer; the synthesizer is used for fixing the power amplification component and inputting and outputting the radio frequency signal; the outer walls of the synthesizer and the power amplifier component are both extended outwards to form a plurality of radiating teeth. The utility model discloses a reasonable structural design, through the application of structural design methods such as support plate transition, probe synthesis, heat dissipation integration, waveguide synthesis, solved the problem that power amplifier module is bulky and heat dissipation difficulty, had stronger practicality.
Description
Technical Field
The utility model relates to a radio frequency microwave circuit correlation technique field especially relates to a three-dimensional integrated power amplifier subassembly.
Background
Along with the development of science and technology, the power density of a radio frequency microwave circuit is higher and higher, and because the output power of a single power amplifier chip is limited, the microwave industry often adopts a plane synthesis mode to synthesize the power of a power amplifier to meet the final requirement of power output.
The existing plane power synthesis mode adopts a synthesis network and a plurality of modules to carry out plane power synthesis, the modules can only be assembled in a plane and cannot be stacked, and the defects of overlarge volume, low heat transfer efficiency and the like exist.
Disclosure of Invention
The utility model provides a three-dimensional integrated power amplifier subassembly to solve above-mentioned prior art not enough, adopted reasonable structural design, through the application of structural design methods such as support plate transition, probe synthesis, heat dissipation integration, waveguide synthesis, solved the power amplifier subassembly bulky and the difficult problem of heat dissipation, have stronger practicality.
In order to realize the purpose of the utility model, the following technologies are adopted:
a three-dimensional integrated power amplifier assembly, comprising:
the waveguide synthesis networks are in a pair and comprise upper cavities and lower cavities;
the power amplifier modules are four in number, are arranged between the waveguide synthesis networks and comprise synthesizers, and a pair of power amplifier components are arranged on two sides of each synthesizer;
the synthesizer is used for fixing the power amplification component and inputting and outputting the radio frequency signal;
the power amplifier component comprises a power amplifier main body, a groove is formed in the inner wall of the power amplifier main body, an assembly groove is formed in the center position of the groove, a support plate is arranged at the bottom of the assembly groove, a power amplifier chip is arranged on the support plate, a wiring groove is formed in the bottom of the groove, a radio frequency circuit board is arranged in the wiring groove and connected to the power amplifier chip, coaxial radio frequency probes are arranged at two ends of the power amplifier main body respectively, the inner side end of each coaxial radio frequency probe is connected to the radio frequency circuit board, an inner cover is added to the groove, an cover plate is arranged on the inner wall of the power amplifier main body, a low frequency circuit board is arranged on the cover plate, a feed glass bead is arranged on one side of the power amplifier main body in an outward extending mode, the inner side of the feed glass bead is connected to the low frequency circuit board, waveguide cushion blocks are arranged at two ends of the power amplifier main body and are arranged at the outer side ends of the coaxial radio frequency probes.
Furthermore, one of the waveguide synthesis networks is a one-to-four synthesis network, and the other waveguide synthesis network is a four-in-one network.
Furthermore, the outer walls of the synthesizer and the power amplifier component are both extended outwards to form a plurality of radiating teeth.
Furthermore, the upper cavity and the lower cavity are connected through screws to form a waveguide synthesis network, the power amplifier module is fixed between the waveguide synthesis networks through screws, and the power amplifier component is fixed to the synthesizer through screws.
Furthermore, the power amplifier chip is sintered on the carrier plate, and the carrier plate is sintered at the bottom of the assembly groove.
Further, the carrier plate is made of a thermally conductive material.
Further, the coaxial radio frequency probe and the power amplifier main body are integrally sintered.
Further, the inner cover is fixed on the power amplifier main body through a screw.
Furthermore, the cover plate is welded on the power amplifier main body in a laser sealing cap mode.
Further, the low-frequency circuit board is fixed on the power amplifier main body through screws.
The technical scheme has the advantages that:
1. the radio frequency circuit, the waveguide synthesis structure and the low-frequency circuit are integrated in one module, so that the use of a power amplifier assembly to space is reduced, and the volume and the weight are reduced;
2. the power amplifier component in the component is subjected to standardized module design, so that the assembly is simplified, the interchangeability is strong, and the maintenance cost is low.
3. The power amplifier redundant space is designed into a heat dissipation structure, so that the heat dissipation effect of the whole module is optimized while the structure weight is reduced.
4. The utility model discloses a reasonable structural design, through the application of structural design methods such as support plate transition, probe synthesis, heat dissipation integration, waveguide synthesis, solved the problem that power amplifier module is bulky and heat dissipation difficulty, had stronger practicality.
Drawings
Fig. 1 shows a perspective view of one embodiment.
Fig. 2 shows a first perspective view of a power amplifier module.
Fig. 3 shows a second perspective view of the power amplifier module.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention, as generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the accompanying drawings, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate the position or positional relationship based on the position or positional relationship shown in the drawings, or the position or positional relationship which is usually placed when the products of the present invention are used, and are only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.
The terms "first," "second," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
The terms "parallel", "perpendicular", etc. do not require that the components be absolutely parallel or perpendicular, but may be slightly inclined. For example, "parallel" merely means that the directions are more parallel relative to "perpendicular," and does not mean that the structures are necessarily perfectly parallel, but may be slightly tilted.
Furthermore, the terms "substantially", and the like are intended to indicate that the relative terms are not necessarily strictly required, but may have some deviation. For example: "substantially equal" does not mean absolute equality, but because absolute equality is difficult to achieve in actual production and operation, certain deviations generally exist. Thus, in addition to absolute equality, "substantially equal" also includes the above-described case where there is some deviation. In this case, unless otherwise specified, terms such as "substantially", and the like are used in a similar manner to those described above.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
As shown in fig. 1-3, a three-dimensional integrated power amplifier module mainly comprises a waveguide synthesis network 1.
The waveguide synthesis networks 1 are paired and comprise upper cavities 10 and lower cavities 11, wherein one waveguide synthesis network 1 is a one-to-four synthesis network, and the other waveguide synthesis network 1 is a four-in-one network. The power amplifier modules 2, the quantity is four, all locate between the waveguide synthetic network 1, including the synthesizer 20, the synthesizer 20 both sides all are equipped with power amplifier component 21 a pair of, the outer wall of synthesizer 20 and power amplifier component 21 all outwards extends take shape to have a plurality of heat dissipation teeth 22. The upper cavity 10 and the lower cavity 11 are connected through screws to form a waveguide synthesis network 1, the power amplifier module 2 is fixed between the waveguide synthesis networks 1 through screws, and the power amplifier component 21 is fixed to the synthesizer 20 through screws. The synthesizer 20 is used for fixing the power amplifier component 21 and inputting and outputting radio frequency signals.
The power amplifier component 21 comprises a power amplifier main body 210, a groove 2100 is formed in the inner wall of the power amplifier main body 210, an assembly groove 2101 is formed in the center of the groove 2100, a carrier plate 211 is arranged at the bottom of the assembly groove 2101, a power amplifier chip 212 is arranged on the carrier plate 211, a wiring groove 2102 is formed in the bottom of the groove 2100, a radio frequency circuit board 213 is arranged in the wiring groove 2102, the radio frequency circuit board 213 is connected to the power amplifier chip 212, coaxial radio frequency probes 214 are arranged at two ends of the power amplifier main body 210, the inner side end of each coaxial radio frequency probe 214 is connected to the radio frequency circuit board 213, an inner cover 215 is covered on the groove 2100, a cover plate 216 is arranged on the inner wall of the power amplifier main body 210, a low frequency circuit board 217 is arranged on the cover plate 216, a feed glass bead 218 is arranged on one side of the power amplifier main body 210 in an outward extending mode, the inner side of the feed glass bead 218 is connected to the low frequency circuit board 217, waveguide cushion blocks 219 are arranged at two ends of the power amplifier main body 210, the waveguide cushion blocks 219 are arranged on the outer side of the power amplifier main body 210, and the waveguide cushion blocks 219 are located at the outer side of the coaxial radio frequency probe 214. The power amplifier chip 212 is sintered on the carrier plate 211, and the carrier plate 211 is sintered at the bottom of the assembly slot 2101. The carrier plate 211 is made of a thermally conductive material. The coaxial rf probe 214 and the power amplifier main body 210 are integrally sintered. The inner cover 215 is fixed to the power amplifier main body 210 by a screw. The cover plate 216 is welded to the power amplifier main body 210 in the form of a laser cap. The low frequency circuit board 217 is fixed to the power amplifier main body 210 by screws.
In a specific implementation process, in order to expand an application range, the number of stages of the waveguide synthesis network 1 and the number of the power amplifier modules 2 are increased or decreased according to actual needs, so that in an actual use process, the number of the power amplifier modules 2 is not limited to four, and meanwhile, the waveguide synthesis network 1 is not limited to a one-to-four synthesis network and a four-to-one network. And meanwhile, carrying out weight reduction design according to the synthetic network path.
In a specific embodiment, the synthesizer 20 is used for assembling two power amplifier components 21 on the installation base by using screws, the waveguide synthesis network 1 is formed by improving standard waveguides, a hollow-out mode is adopted in the middle of the waveguide synthesis network to achieve the effects of weight reduction and avoidance of devices, and corresponding heat dissipation teeth are processed on two sides of the waveguide synthesis network to increase the auxiliary heat dissipation effect on the power amplifier module.
In a specific embodiment, to ensure the air tightness of the structure, the transmission of signals is realized by using coaxial rf probes 214 at the input and output ends. Because the coaxial rf probe 214 and the power amplifier main body 210 are integrally sintered, the coaxial probe is more easily airtight than the conventional microstrip probe waveguide coaxial probe. Meanwhile, in order to solve the problem of internal heat conduction, the power amplifier chip 212 is sintered on the carrier plate 211 made of high-heat-conduction material, and then the carrier plate 211 is sintered on the power amplifier main body 210, and the design mode ensures good heat transfer effect and solves the problem of mismatch of thermal expansion coefficients between the materials of the power amplifier main body 210 and the power amplifier chip 212. For the power amplifier main body 210, a heat dissipation tooth integrated design scheme is adopted, on the premise that heat conduction is not influenced, redundant structural space is designed into a heat dissipation tooth 22 form, the effect of the power amplifier main body 210 and the heat dissipation structure integrated design is achieved, and compared with the traditional rear-added heat dissipation tooth scheme, the integrated design scheme has the advantages of being smaller in space, light in structural weight, free of heat conduction resistance between metal butt joints and the like. The whole power amplifier component 21 has an independent power supply control design, the power supply and control inside the module are realized by welding the low-frequency circuit board 217 and the feed glass bead 218, and compared with the traditional centralized power supply control, the power amplifier component has the characteristics of strong independence and high space utilization rate. The waveguide cushion blocks 10 are sintered on the power amplifier main body 210 through soldering tin, the inner cover 215 is fixed on the surface of the power amplifier main body 210 through screws, the input channel and the output channel are shielded, the cover plate 216 is welded on the power amplifier main body 210 in a laser sealing cap mode, the coaxial radio frequency probe 214 and the feed glass beads 218 are used together for providing airtight guarantee for the inside of the whole power amplifier component 21, the low-frequency circuit board 217 is fixed on the power amplifier main body 210 through screws, and power supply and control of the power amplifier chip 212 inside the power amplifier component 21 are achieved after the low-frequency circuit board is welded with the feed glass beads 218.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and it is obvious that those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. A three-dimensional integrated power amplifier assembly, comprising:
the waveguide synthesis networks (1) are paired and comprise upper cavities (10) and lower cavities (11);
the power amplifier modules (2) are four in number, are arranged between the waveguide synthesis networks (1), and comprise synthesizers (20), and a pair of power amplifier components (21) are arranged on two sides of each synthesizer (20);
the synthesizer (20) is used for fixing the power amplifier component (21) and inputting and outputting the radio frequency signal;
the power amplifier component (21) comprises a power amplifier main body (210), a groove (2100) is formed in the inner wall of the power amplifier main body (210), an assembly groove (2101) is formed in the center position of the groove (2100), a carrier plate (211) is arranged at the bottom of the assembly groove (2101), a power amplifier chip (212) is arranged on the carrier plate (211), a wiring groove (2102) is formed in the bottom of the groove (2100), a radio frequency circuit board (213) is arranged in the wiring groove (2102), the radio frequency circuit board (213) is connected to the power amplifier chip (212), coaxial radio frequency probes (214) are arranged at two ends of the power amplifier main body (210), the inner ends of the coaxial radio frequency probes (214) are connected to the radio frequency circuit board (213), an inner cover (215) is covered on the groove (2100), a cover plate (216) is arranged on the inner wall of the power amplifier main body (210), a low frequency circuit board (217) is arranged on the cover plate (216), a feed glass bead (218) extends outwards from one side of the power amplifier main body (210), the inner side of the feed glass bead (218) is connected to the low-frequency circuit board (217), waveguide cushion blocks (219) are arranged at two ends of the power amplifier main body (210), the waveguide cushion blocks (219) are arranged on the outer side of the power amplifier main body (210), and the waveguide cushion blocks (219) are located at the outer side ends of the coaxial radio-frequency probes (214).
2. The three-dimensional integrated power amplifier assembly according to claim 1, wherein one of the waveguide synthesis networks (1) is a one-to-four synthesis network, and the other waveguide synthesis network (1) is a four-in-one network.
3. The three-dimensional integrated power amplifier assembly according to claim 1, wherein the outer walls of the combiner (20) and the power amplifier component (21) are both formed with a plurality of outwardly extending heat dissipation teeth (22).
4. The three-dimensional integrated power amplifier assembly according to claim 1, wherein the upper cavity (10) and the lower cavity (11) are connected by screws to form a waveguide synthesis network (1), the power amplifier module (2) is fixed between the waveguide synthesis networks (1) by screws, and the power amplifier component (21) is fixed to the synthesizer (20) by screws.
5. The three-dimensional integrated power amplifier assembly according to claim 1, wherein the power amplifier chip (212) is sintered on the carrier plate (211), and the carrier plate (211) is sintered at the bottom of the assembly slot (2101).
6. The three-dimensional integrated power amplifier module according to claim 1, wherein the carrier board (211) is made of a heat conductive material.
7. The three-dimensional integrated power amplifier assembly according to claim 1, wherein the coaxial RF probe (214) and the power amplifier main body (210) are integrally sintered.
8. The three-dimensional integrated power amplifier assembly according to claim 1, wherein the inner cover (215) is fixed to the power amplifier main body (210) by screws.
9. The three-dimensional integrated power amplifier assembly according to claim 1, wherein the cover plate (216) is welded to the power amplifier main body (210) in a laser cap sealing manner.
10. The three-dimensional integrated power amplifier assembly according to claim 1, wherein the low frequency circuit board (217) is fixed to the power amplifier main body (210) by screws.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120059091.1U CN213878367U (en) | 2021-01-11 | 2021-01-11 | Three-dimensional integrated power amplifier assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120059091.1U CN213878367U (en) | 2021-01-11 | 2021-01-11 | Three-dimensional integrated power amplifier assembly |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213878367U true CN213878367U (en) | 2021-08-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120059091.1U Active CN213878367U (en) | 2021-01-11 | 2021-01-11 | Three-dimensional integrated power amplifier assembly |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN213878367U (en) |
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2021
- 2021-01-11 CN CN202120059091.1U patent/CN213878367U/en active Active
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