CN213520690U - External cavity semiconductor laser - Google Patents

Abstract

The embodiment of the utility model provides a relate to laser instrument design technical field, disclose an exocoel semiconductor laser, it includes: a COS array for producing laser sets gradually fast axle collimating lens array and the volume Bragg grating array in the light-emitting direction of this COS array, is equipped with the casing of the cavity of accomodating COS array, fast axle collimating lens array and volume Bragg grating array to and can fix the thermal-insulated fixed block array of high temperature resistant on the casing with volume Bragg grating array, the embodiment of the utility model provides a fix the volume Bragg grating through set up the thermal-insulated fixed block of high temperature resistant on laser casing, avoid the volume Bragg grating to receive the influence of casing high temperature and reflection of light, thereby promote the reflection and the diffraction ability of volume Bragg grating.

Description

External cavity semiconductor laser

Technical Field

The embodiment of the utility model provides a relate to laser instrument design technical field, in particular to exocoel semiconductor laser.

Background

A laser is a device or a system capable of generating and emitting laser light, has characteristics of high brightness, good monochromaticity and directivity, good coherence, and is generally classified into a gas laser, a solid laser, a semiconductor laser, and a dye laser 4, which are large types of lasers, according to a working medium. The semiconductor laser is a laser which can inject carriers into an active layer of the laser, realize population inversion and realize photon resonance through a resonant cavity. In the semiconductor laser, the laser is divided into an external cavity semiconductor laser and an internal cavity semiconductor laser according to whether a resonant cavity of the laser is arranged in a laser chip. The external cavity semiconductor laser extends the resonant cavity of the laser to the outside of the device and is realized by an optical reflecting mirror surface.

In implementing the embodiments of the present invention, the inventor finds that there are at least the following problems in the above related art: at present, one of the schemes of external cavity semiconductor lasers in the market is to use a volume bragg grating as an optical reflection mirror to extend the device of the laser resonant cavity, however, it is common practice to directly bond the volume bragg grating to the housing, and since various lasers are generally reflected to the housing in the laser, the housing is usually made of a material with strong heat dissipation capability in order to dissipate heat as quickly as possible, which causes high temperature brought by the housing and stray light reflected by the housing to easily affect the reflection and diffraction capability of the volume bragg grating.

SUMMERY OF THE UTILITY MODEL

To address the above-mentioned deficiencies of the prior art, it is an object of embodiments of the present invention to provide an external cavity semiconductor laser with less influence on volume bragg gratings.

The embodiment of the utility model provides an aim at is realized through following technical scheme:

in order to solve the above technical problem, an embodiment of the present invention provides an external cavity semiconductor laser, including:

a COS array for generating laser;

the fast axis collimating lens array is arranged in the light-emitting direction of the COS array;

the volume Bragg grating array is arranged in the light emergent direction of the fast axis collimating lens array and is used for reflecting the laser with a specific wavelength in the laser;

a housing having a hollow cavity housing the COS array, the fast axis collimating lens array, and the volume Bragg grating;

and the high-temperature-resistant heat-insulation fixed block array fixes the volume Bragg grating array on the shell.

In some embodiments, the volume bragg grating is fixed on the high-temperature-resistant heat-insulation fixing block through high-temperature-resistant glue adhesion.

In some embodiments, a groove capable of clamping and fixing the volume bragg grating is arranged on the high-temperature-resistant heat-insulation fixing block.

In some embodiments, a clamp capable of clamping and fixing the bragg grating is arranged on the high-temperature-resistant heat-insulation fixing block.

In some embodiments, the high-temperature-resistant heat-insulation fixing block is a ceramic fixing block with a small heat conductivity coefficient.

In some embodiments, the high temperature resistant heat insulation fixing block is an opaque fixing block.

In some embodiments, the reflectivity of the volume bragg grating for the laser light of the specific wavelength is 10% to 30%.

In some embodiments, the laser of the specific wavelength is pump light emitted from a pump source disposed in the COS array.

In some embodiments, a high reflection film is plated on the rear end face of the laser chip in the COS array to serve as a rear cavity mirror of a resonant cavity of the external cavity semiconductor laser, an antireflection film is plated on the front end face of the laser chip,

and the volume Bragg grating is arranged on the light-emitting side of the front end face of the laser chip and is used as a front cavity mirror of the resonant cavity of the external cavity semiconductor laser.

In some embodiments, the external cavity semiconductor laser further comprises:

the slow axis collimating lens array is arranged in the light emergent direction of the volume Bragg grating array;

the reflector array is arranged in the light emergent direction of the slow axis collimating lens array at a preset angle;

the focusing lens group is arranged in the light emitting direction of the reflector array;

and the light inlet end surface of the optical fiber output head is arranged on the focus of the focusing lens group.

Compared with the prior art, the beneficial effects of the utility model are that: be different from the condition of prior art, the embodiment of the utility model provides an external cavity semiconductor laser is provided, it includes: a COS array for producing laser sets gradually fast axle collimating lens array and the volume Bragg grating array in the light-emitting direction of this COS array, is equipped with the casing of the cavity of accomodating COS array, fast axle collimating lens array and volume Bragg grating array to and can fix the thermal-insulated fixed block array of high temperature resistant on the casing with volume Bragg grating array, the embodiment of the utility model provides a fix the volume Bragg grating through set up the thermal-insulated fixed block of high temperature resistant on laser casing, avoid the volume Bragg grating to receive the influence of casing high temperature and reflection of light, thereby promote the reflection and the diffraction ability of volume Bragg grating.

Drawings

The embodiments are illustrated by the figures of the accompanying drawings which correspond and are not meant to limit the embodiments, in which elements/blocks having the same reference number designation may be represented by like elements/blocks, and in which the drawings are not to scale unless otherwise specified.

Fig. 1 is a schematic top view of a structure of an external cavity semiconductor laser according to an embodiment of the present invention;

fig. 2 is a schematic structural diagram of a group of COS elements, a fast axis collimating lens, a volume bragg grating and a high temperature resistant heat insulation fixing block in the external cavity semiconductor laser shown in fig. 1 in one direction;

fig. 3 is a schematic structural diagram of a group of COS elements, a fast axis collimating lens, a volume bragg grating and a high temperature resistant heat insulation fixing block in the external cavity semiconductor laser shown in fig. 1 in another direction;

fig. 4 is a schematic view of a fixing manner of a second volume bragg grating and a high temperature resistant heat insulation fixing block according to an embodiment of the present invention;

fig. 5 is a schematic view of a third fixing mode of the volume bragg grating and the high temperature resistant heat insulation fixing block according to an embodiment of the present invention.

Detailed Description

The present invention will be described in detail with reference to the following embodiments. The following examples will assist those skilled in the art in further understanding the present invention, but are not intended to limit the invention in any way. It should be noted that various changes and modifications can be made by one skilled in the art without departing from the spirit of the invention. These all belong to the protection scope of the present invention.

In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.

It should be noted that, if not conflicted, the various features of the embodiments of the invention can be combined with each other and are within the scope of protection of the present application. In addition, although the functional blocks are divided in the device diagram, in some cases, the blocks may be divided differently from those in the device.

It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may be present. In order to facilitate the connection structure to be limited, the utility model discloses use the light-emitting direction of laser to carry out the position of part and prescribe a limit to as the reference.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

Furthermore, the technical features mentioned in the embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

Specifically, the embodiments of the present invention will be further explained with reference to the drawings.

Example one

The utility model provides an exocoel semiconductor laser please see fig. 1, it shows the utility model provides a structure of exocoel semiconductor laser, exocoel semiconductor laser includes: COS array 110, fast axis collimating lens array 120, volume bragg grating array 130, housing 140 and high temperature resistant thermal insulation fixed block array 150, and further, the semiconductor laser may further include: a slow axis collimating lens array 160, a mirror array 170, a focusing lens group 180, and a fiber output head 190.

The COS array 110 for generating laser light; the COS array 110 includes at least one COS-packaged semiconductor laser chip for generating the laser light, and even a pumping source for emitting pumping light, which is emitted after resonating in the semiconductor laser chip, and at least one heat sink for fixing the semiconductor laser chip on the housing 140.

The fast axis collimating lens array 120 is arranged in the light-emitting direction of the COS array 110; the fast axis collimating lens array 120 includes at least one fast axis collimating lens (also referred to as FAC), the number of which is the same as the number of the semiconductor laser chips, and the fast axis collimating lens is used for collimating the laser spots emitted from the semiconductor laser chips in the fast axis and then emitting the laser spots, and the fast axis collimating lens is a cylindrical lens.

The volume bragg grating array 130 is disposed in the light-emitting direction of the fast axis collimating lens array 120, and is configured to reflect laser with a specific wavelength in the laser; the volume bragg grating array 130 includes at least one volume bragg grating (also referred to as VBG), which is the same as the number of the semiconductor laser chips, and is configured to lock and/or filter the laser light emitted from the fast axis collimating lens and emit the laser light, specifically, it is capable of reflecting all or part of the laser light with a specific wavelength from the laser light emitted from the semiconductor laser chips back into the semiconductor laser chips and transmitting and emitting the laser light with other wavelengths and/or part of the laser light with the specific wavelength.

Preferably, the reflectivity of the volume bragg grating to the laser light with the specific wavelength is 10% to 30%, so that the laser light with the specific wavelength can be partially reflected back to the semiconductor laser chip and partially transmitted through the volume bragg grating for emission. Preferably, the laser light with a specific wavelength is pump light emitted from a pump source disposed in the COS array 110, and may be, for example, a 906nm laser light.

In the embodiment of the present invention, in COS array 110, the rear end face of semiconductor laser chip plates and is equipped with high anti-reflection coating as the rear cavity mirror of the resonant cavity of exocoel semiconductor laser, the preceding terminal surface of laser chip plates and is equipped with anti-reflection coating, and has, the volume bragg grating is located the light-emitting side of the preceding terminal surface of laser chip is regarded as the preceding cavity mirror of the resonant cavity of exocoel semiconductor laser.

The housing 140 is provided with a hollow cavity for accommodating the COS array 110, the fast axis collimating lens array 120 and the volume bragg grating 130; the housing 140 may be made of a material resistant to high temperature and difficult to deform by molding.

The high temperature resistant thermal insulation fixing block array 150 fixes the volume bragg grating array 130 on the housing 140. Preferably, the high-temperature resistant heat insulation fixing block 150 is a ceramic fixing block with a small heat conductivity coefficient. Preferably, the high temperature resistant heat insulation fixing block 150 may also be an opaque fixing block. In other some embodiments, high temperature resistant thermal-insulated fixed block 150 can adopt high temperature resistant, the heat-sinking capability is strong, the thermal-insulated ability is strong, be difficult to the material of warping to make according to actual need, specifically, can select according to actual need, need not be restricted to the utility model discloses the injecion of embodiment.

In the embodiment of the present invention, please refer to fig. 2 and fig. 3 together, respectively show the structures of a set of COS element 110, fast axis collimating lens 120, volume bragg grating 130 and high temperature resistant thermal insulation fixing block 150 in two directions in the semiconductor laser shown in fig. 1, as shown in fig. 2 and fig. 3, in the embodiment of the present invention, the volume bragg grating 130 is fixed on the high temperature resistant thermal insulation fixing block 150 through high temperature resistant glue bonding, and there is, the high temperature resistant thermal insulation fixing block 150 is formed by the high temperature resistant glue bonding of the cuboid blocks 151 and 152 of two split bodies. In other embodiments, the high temperature resistant and thermal insulating fixing block 150 may be integrally formed, or may be formed by fixing a plurality of split blocks, and the shape, size, and the like of the high temperature resistant and thermal insulating fixing block 150 may be designed according to the shape of the volume bragg grating 130 and the requirements such as the height required to be set, without being restricted by the embodiments and drawings of the present invention.

In some embodiments, please refer to fig. 4 together, which illustrates a fixing manner of the second volume bragg grating 130 and the high temperature resistant heat insulation fixing block 150, as shown in fig. 4, a groove 153 capable of clamping and fixing the volume bragg grating 130 is disposed on the high temperature resistant heat insulation fixing block 150, and the volume bragg grating 130 is clamped on the high temperature resistant heat insulation fixing block 150 through the groove 153 to realize the fixing. In other embodiments, the shape, size and position of the groove 153 can be designed according to actual needs, and need not be limited by the embodiments and drawings of the present invention.

In some embodiments, please refer to fig. 5, which shows a fixing manner of the third volume bragg grating 130 and the high temperature resistant heat insulation fixing block 150, as shown in fig. 5, a clamp 154 capable of clamping and fixing the volume bragg grating 130 is disposed on the high temperature resistant heat insulation fixing block 150, and the volume bragg grating 130 is clamped on the high temperature resistant heat insulation fixing block 150 by the clamp 154 to achieve the fixing. In other embodiments, the shape, size, number and position of the clamp 154 can be designed according to actual needs, and need not be limited by the embodiments and the drawings of the present invention.

Further, in some other embodiments, the fixing manner of the volume bragg grating 130 and the high temperature resistant thermal insulation fixing block 150 is not limited to the manner shown in fig. 2, fig. 3, fig. 4 and fig. 5, and may also be other fixing manners, and meanwhile, the fixing manner of the volume bragg grating 130 and the high temperature resistant thermal insulation fixing block 150 may be only one fixing manner, and may also be two or more fixing manners at the same time, for example, two fixing manners of fixing by groove clamping and fixing by clamp clamping are adopted in fig. 5, and specifically, the fixing manner may be set or replaced according to actual requirements, and does not need to be limited by the embodiments of the present invention.

The slow axis collimating lens array 160 is arranged in the light-emitting direction of the volume bragg grating array 130; the slow axis collimating lens array 160 includes at least one slow axis collimating lens (also referred to as SAC) in the same number as the semiconductor laser chips, and is configured to perform slow axis collimation on the laser spots emitted from the volume bragg grating 130 and emit the laser spots, where the slow axis collimating lens is a cylindrical lens.

The reflector array 170 is arranged in the light-emitting direction of the slow-axis collimating lens array 160 at a preset angle; the preset angle can be set according to the requirement of the light-emitting direction of the laser, and the reflector array 170 includes at least one reflector, the number of which is at least greater than or equal to the number of the semiconductor laser chips, and the reflector array is used for changing the light-emitting direction of the laser.

The focusing lens group 180 is arranged in the light outgoing direction of the reflector array; the focusing lens assembly 180 includes at least one focusing lens, and it is used for focusing the back outgoing from the laser that the speculum array 170 is emergent, in the embodiment shown in fig. 1, the focusing lens assembly 180 includes three focusing lens, and when in actual use, its quantity and model can be set up according to the size of actual laser instrument and the needs of focusing capacity, need not be restricted to the utility model discloses a limit.

The light incident end surface of the optical fiber output head 190 is disposed at the focal point of the focusing lens assembly 180, and is used for realizing the coupling output of laser light, and the size and the type of the optical fiber output head can be set according to actual needs.

The embodiment of the utility model provides an in provide an exocoel semiconductor laser, it includes: a COS array for producing laser sets gradually fast axle collimating lens array and the volume Bragg grating array in the light-emitting direction of this COS array, is equipped with the casing of the cavity of accomodating COS array, fast axle collimating lens array and volume Bragg grating array to and can fix the thermal-insulated fixed block array of high temperature resistant on the casing with volume Bragg grating array, the embodiment of the utility model provides a fix the volume Bragg grating through set up the thermal-insulated fixed block of high temperature resistant on laser casing, avoid the volume Bragg grating to receive the influence of casing high temperature and reflection of light, thereby promote the reflection and the diffraction ability of volume Bragg grating.

It should be noted that the above-described device embodiments are merely illustrative, where the units described as separate parts may or may not be physically separate, and the parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on multiple network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of the present embodiment.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit it; within the idea of the invention, also technical features in the above embodiments or in different embodiments can be combined, steps can be implemented in any order, and there are many other variations of the different aspects of the invention as described above, which are not provided in detail for the sake of brevity; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention.

Claims (10)

1. An external cavity semiconductor laser, comprising:

a COS array for generating laser;

the fast axis collimating lens array is arranged in the light-emitting direction of the COS array;

the volume Bragg grating array is arranged in the light emergent direction of the fast axis collimating lens array and is used for reflecting the laser with a specific wavelength in the laser;

a housing having a hollow cavity housing the COS array, the fast axis collimating lens array, and the volume Bragg grating;

and the high-temperature-resistant heat-insulation fixed block array fixes the volume Bragg grating array on the shell.

2. The external cavity semiconductor laser according to claim 1,

the volume Bragg grating is fixedly bonded on the high-temperature-resistant heat-insulation fixing block through high-temperature-resistant glue.

3. The external cavity semiconductor laser according to claim 1,

the high-temperature-resistant heat-insulation fixing block is provided with a groove capable of clamping and fixing the volume Bragg grating.

4. The external cavity semiconductor laser according to claim 1,

and the high-temperature-resistant heat-insulation fixing block is provided with a clamp capable of clamping and fixing the volume Bragg grating.

5. The external cavity semiconductor laser according to any one of claims 1 to 4,

the high-temperature-resistant heat-insulation fixed block is a ceramic fixed block with a small heat conductivity coefficient.

6. The external cavity semiconductor laser according to claim 5,

the high-temperature-resistant heat-insulation fixing block is an opaque fixing block.

7. The external cavity semiconductor laser according to claim 6,

the reflectivity of the volume Bragg grating to the laser with the specific wavelength is 10-30%.

8. The external cavity semiconductor laser according to claim 7,

the laser with the specific wavelength is pump light emitted by a pump source arranged in the COS array.

9. The external cavity semiconductor laser according to claim 8,

the back end face of the laser chip in the COS array is plated with a high reflection film as a back cavity mirror of the resonant cavity of the external cavity semiconductor laser, the front end face of the laser chip is plated with an anti-reflection film,

and the volume Bragg grating is arranged on the light-emitting side of the front end face of the laser chip and is used as a front cavity mirror of the resonant cavity of the external cavity semiconductor laser.

10. An external cavity semiconductor laser according to claim 9 further comprising:

the slow axis collimating lens array is arranged in the light emergent direction of the volume Bragg grating array;

the reflector array is arranged in the light emergent direction of the slow axis collimating lens array at a preset angle;

the focusing lens group is arranged in the light emitting direction of the reflector array;

and the light inlet end surface of the optical fiber output head is arranged on the focus of the focusing lens group.

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