CN212967721U

CN212967721U - GaN-on-Si epitaxial substrate with 2D material interlayer

Info

Publication number: CN212967721U
Application number: CN202022460792.4U
Authority: CN
Inventors: 王晓靁; 施能泰; 宋高梅
Original assignee: Individual
Current assignee: Individual
Priority date: 2020-10-29
Filing date: 2020-10-29
Publication date: 2021-04-13
Anticipated expiration: 2030-10-29
Also published as: WO2022089181A1; TWM625439U

Abstract

The utility model discloses a GaN-on-Si epitaxial substrate with a 2D material middle layer, which is provided with a 2D material ultrathin medium layer with multiple crystal orientations on a silicon wafer substrate, wherein the 2D material ultrathin medium layer is at least provided with a top layer; the lattice constant of the top layer is highly matched with AlN, AlGaN or GaN; a GaN single crystal epitaxial layer grows on the top layer of the 2D material ultrathin intermediate layer through Van der Waals epitaxy, or an AlGaN or AlN nucleation auxiliary layer grows on the top layer of the 2D material ultrathin intermediate layer through Van der Waals epitaxy, and the GaN single crystal epitaxial layer is arranged on the nucleation auxiliary layer. The utility model effectively overcomes the defect quality problem of gallium nitride layer caused by mismatching of heteroepitaxial crystal lattices; the method relieves the problem of thermal stress caused by different thermal expansion coefficients, and is beneficial to growing high-quality GaN epitaxial layers so as to manufacture GaN-based photoelectric and semiconductor components with equal wide energy gaps.

Description

GaN-on-Si epitaxial substrate with 2D material interlayer

Technical Field

The utility model relates to a gallium nitride GaN-on-Si epitaxial substrate on silicon with 2D material intermediate layer.

Background

Epitaxy has a significant impact on the quality of the product during the fabrication of photovoltaic and semiconductor devices. The quality effects include device performance, yield, reliability, and lifetime. Generally, the substrate material is desirably a single crystal material that minimizes the defect density, and crystal quality is not affected during epitaxy as much as possible when the crystal structure, lattice constant (lattice constant), and Coefficient of Thermal Expansion (CTE) are matched to the epitaxial material. In recent years, the third generation semiconductor technology and the market are rapidly developed along with the requirements of power and high frequency semiconductor components, and the supply of high-quality epitaxial substrates of silicon carbide and gallium nitride at two main angles of the third generation semiconductor materials is relied on as the basis of quality improvement. Unlike the gallium nitride-based LED which mainly uses a sapphire substrate, the most commonly used gallium nitride substrates according to the current technology are two substrates, namely, gallium nitride (GaN-on-Si) and gallium nitride on silicon carbide (GaN-on-SiC) on a silicon wafer.

The main reason is derived from the current cost and size limitations of the gallium nitride single crystal technology development. In other words, if a single crystal substrate of the above two materials is directly produced by a melt-growth method, not only the production cost is increased, but also relatively more waste heat is generated, which causes unavoidable environmental pollution. In the Vapor Phase growth process, the Hydride Vapor Phase Epitaxy (HVPE) method is currently used for growing gallium nitride crystals to produce single-crystal gallium nitride substrates, and due to the limitations of production cost and yield conditions, the current mass production technology reaches 4 inches of substrates and the cost is extremely high. In fact, the defect density of the vapor phase method is still higher than that of other liquid phase crystal growth processes, but the crystal growth rate of the rest processes is too slow, the volume production cost is higher, and the commercial main flow is still limited to the HVPE method under the consideration of market demand, device performance and substrate cost and supply trade-off. The literature indicates that the vapor phase method GaN growth rate still has the possibility of increasing several times and maintaining good crystallinity, but is limited by the deterioration of defect density and is not currently oriented to reduce the cost of GaN substrates. As for the aluminum nitride crystal growth technology, a Physical Vapor Transport (PVT) method, which is one of Vapor phase methods, is used to produce the single crystal aluminum nitride substrate, because of the limitations of production technology and yield, only two manufacturers have mass production capability globally, the cost is very high when the current mass production technology only reaches 2 inches of substrates, and the capacity cannot be widely supplied to the market because of the occupation of a few manufacturers. Due to the chemical characteristics of aluminum nitride and the limitation of hardware components by a physical vapor transport method, carbon (C) and oxygen (O) impurities exist in a single crystal finished product to a certain degree inevitably, and the component characteristics are also influenced to a certain degree.

TABLE 1

Similarly, there are also existing silicon carbide (SiC) single crystals, silicon carbide substrates are the substrate materials of high-performance power semiconductors and high-end light emitting diodes at present, the single crystal growth process is Physical Vapor Transport (PVT) in the Vapor phase method, the growth technology of high-quality large-size silicon carbide single crystals is difficult, the high-end mass production technology is mastered by a few manufacturers, and there is still much room for improvement in the influence on the application cost. Gallium nitride on silicon carbide (GaN-on-SiC) is a high-quality gallium nitride epitaxial substrate, but for the above reasons, the large-size substrate has the problems of high price, limited supply amount, technical mastery in hands of a few manufacturers and the like; in contrast, silicon substrates are large in size, low in cost, high in productivity and stable in quality, and gallium nitride (GaN-on-Si) substrates on silicon wafers are more popular and are of interest to relevant manufacturers.

Two substrate technologies of gallium nitride (GaN-on-Si) and gallium nitride (GaN-on-SiC) on silicon wafer belong to heterojunction epitaxial technology in the aspect of epitaxial process, heteroepitaxy needs to overcome the problem of lattice matching between different materials and the problem of thermal stress between epitaxial layer and substrate caused by different thermal expansion coefficients, and the GaN-on-SiC has higher quality than the GaN-on-Si because the degree of lattice mismatch (lattice mismatch) of GaN-on-SiC is smaller than that of GaN-on-Si; another important characteristic is that the gallium nitride layer has significant tensile stress on the silicon surface, and the stress is higher when the thickness of the gallium nitride layer is increased, so that the bending deformation of the substrate and even the gallium nitride layer may crack, and the related effect is more serious as the size of the wafer is increased. The difficulty of the related technology leads to generally low yield of GaN-on-Si, and the GaN-on-Si is mostly applied to power supply products, the mass production is mainly six inches at present, and the advantage of large size of silicon wafers cannot be fully exerted.

Two-dimensional (2D) materials are an emerging field of rapid development, the earliest attracting mass development and investment in the 2D material family is also known as graphene (graphene), the two-dimensional layered structure of graphene has special or excellent physical/chemical/mechanical/photoelectric properties, and there is no strong bonding between layers, and the two-dimensional layered structure is only bonded by van der waals force, which also means that there is no dangling bond (dangling bond) on the surface of the layered structure, and graphene is currently identified to have wide and excellent application potential; graphene development work is widely carried out all over the world, and simultaneously, the development of more 2D materials is also driven, including hexagonal Boron nitride hbn (hexagonal Boron nitride), transition metal dichalcogenides tmds (transition metal dichalcogenides), black phosphorus and the like are also accumulated more research and development achievers in the 2D material family, the materials respectively have specific material characteristics and application potential, and the development of the manufacturing technology of the related materials is also actively promoted. MoS of one of graphene, hBN and TMDs material in addition to excellent photoelectric characteristics₂Are considered to have excellent diffusion barrier properties and varying degrees of high temperature stability, and in particular hBN is considered to have excellent chemical inertness (inertness) and high temperature oxidation resistance.

Due to the nature of the layered structure and the inter-layer van der waals bonding characteristics, the technical feasibility of fabricating two or more materials in the 2D family of materials into a layered-stacked heterostructure (hetero-structure) is greatly expanded, the heterostructure can create new application characteristics or fabricate new components in addition to combining different characteristics, and the research and development in the fields of photoelectricity and semiconductors are very active at present. In particular, it may be a mechanically composed layer, or it may be a physical or chemical vapor deposition.

The van der Waals force binding property of 2D materials has also gained attention for the application of epitaxial substrates to conventional 3D materials, focusing on the fact that epitaxial materials in epitaxial technology must match very well with substrate materials in terms of crystal structure, lattice constant (lattice constant), Coefficient of Thermal Expansion (CTE), but in reality they are often subject to conditions such as lack of suitability for substrate materials as the subject of the present invention, or ideal substrate materials are either more costly or not readily available, when 2D materials offer another solution for heteroepitaxial substrates, namely the so-called van der Waals epitoxy. The mechanism by which van der waals epitaxy may benefit heteroepitaxy is that the direct chemical bonding at the conventional epitaxial interface is replaced by van der waals bonding, which will relieve the lattice and thermal expansion mismatch stress or strain energy from the epitaxy process to some extent, thus improving the quality of the epitaxial layer, or by introducing 2D materials and van der waals epitaxy, some heteroepitaxy techniques that were not practical previously are possible. Related studies have also shown that when the above 2D materials are stacked on top of each other in a heterostructure, the interaction forces are dominated by van der waals forces; when the Epitaxy of the 3D material is performed on the 2D material, the Epitaxy is not substantially pure van der Waals epitaxiy (van der Waals epitaxiy) or more precisely can be regarded as Quasi van der Waals epitaxiy (Quasi van der Waals epitaxiy) because the existence of dangling bonds (dangling bonds) of the 3D material on the interface simultaneously contributes to the bonding force of the interface; in any case, the degree of lattice and thermal expansion matching still certainly contributes to the final epitaxial quality, and the overall matching degree is contributed by the 2D material interposer and the substrate material. The 2D layered material has a hexagonal or honeycomb structure, and is compatible with Wurtzite (Wurtzite) and zincblende (Zinc-blend) structure materials in terms of external delay time, and the main epitaxial materials in the related field of the invention belong to the structure.

Based on the application of an epitaxial substrate, a single crystal (single crystal) is one of the requirements for ensuring the epitaxial quality, the crystal orientation of a general 2D material is often correlated with that of a crystalline substrate in a nucleation stage, when the substrate adopts a general metal foil, the 2D material has a polycrystalline structure, the direction of the 2D material is not consistent in the nucleation stage, and after the crystal nuclei are polymerized into a continuous film along with growth, blocks (domains) with different orientations are still present instead of single crystals; when the substrate is made of single crystal material such as sapphire, the specific nucleation direction possibly occurring due to the symmetrical correlation of the two structures is not unique, and a single crystal continuous film cannot be formed. Recent research has found that when the copper foil is subjected to heat treatment to form a copper foil with a specific lattice orientation by improving the existing process, anisotropic lattice blocks (domains) formed during the growth of 2D graphene and hexagonal boron nitride (hBN) materials can be eliminated, and a continuous film of single crystal graphene and hexagonal boron nitride can be grown.

In recent years, many studies have indicated that 2D material family is generally ideal substrate materials for heteroepitaxy, such as epitaxial substrate of transition metal dichalcogenides tmds (transition metal dichalcogenides) material, which is regarded as excellent hBN, and that MoS can be epitaxially grown on the surface of single crystal hBN₂、WS₂、MoSe₂、WSe₂The TMD material is isocratic and maintains up to 95% of the surface area as a single crystal continuous film.

Recent studies have pointed out that a layered MoS having good crystallinity can be grown on the surface of a single-crystal c-plane sapphire by CVD or the like₂、WS₂、MoSe₂、WSe₂The TMD materials have two crystal orientations (crystal orientations) (0 ℃ and 60 ℃) in the grown TMD materials (reference: Nature 2019, v.567, 169-170). Regarding the AlGaN and GaN materials of interest in the present invention, the crystal structure has hexagonal symmetry at the epitaxial junction, and the TMD layer does not constitute a single crystal layer, but theoretically does not hinder the formation of single crystals in the AlGaN and GaN epitaxial layers when used as an epitaxial substrate; the technology of peeling off the TMD layer from the sapphire surface and transferring the layer to other substrate surface has been put into practical use and large-area, the sapphire substrate can be recycled, and the technology belongs to the feasible process of commercial production (refer to ACS Nano 2015,9,6, 6178-. Therefore, in addition to the previous method for producing TMD single crystal continuous thin film, the transfer of the TMD layer on the surface of sapphire to the substrate with thermal expansion coefficient matching with those of AlGaN and GaN is another suitable for mass productionAnd (4) scheme.

Gallium nitride (GaN-on-Si) on a prior art silicon wafer is shown in fig. 1. Heteroepitaxy needs to solve the problem of lattice matching between different materials and the problem of thermal stress between an epitaxial layer and a substrate due to different thermal expansion coefficients, and the defect density of a gallium nitride layer in the epitaxial process is high due to the fact that the degree of GaN-on-Si lattice mismatching (lattice mismatch) is high; another important characteristic is that the gallium nitride layer has significant tensile stress on the silicon surface, and the stress is higher when the thickness of the gallium nitride layer is increased, so that the bending deformation of the substrate and even the gallium nitride layer may crack, and the related effect is more serious as the size of the wafer is increased. The difficulty of the related technology leads to generally low yield of GaN-on-Si, and the GaN-on-Si is mostly applied to power supply products, the mass production is mainly six inches at present, and the advantage of large size of silicon wafers cannot be fully exerted.

SUMMERY OF THE UTILITY MODEL

In order to solve the problems existing in the prior art, the utility model provides a gallium nitride GaN-on-Si epitaxial substrate on silicon with a 2D material middle layer.

The utility model discloses a solution as follows:

the GaN-on-silicon GaN-on-Si epitaxial substrate with the 2D material middle layer comprises a monocrystalline silicon wafer substrate;

the silicon wafer substrate is provided with a 2D material ultrathin medium layer with multiple crystal orientations, and the 2D material ultrathin medium layer with multiple crystal orientations at least comprises a top layer;

the lattice constant of the top layer is highly matched with AlN, AlGaN or GaN; the lattice constant of the top layer is highly matched with the GaN, and a GaN single crystal epitaxial layer grows on the top layer of the 2D material ultrathin intermediate layer by virtue of Van der Waals epitaxy; or the lattice constant of the top layer is highly matched with AlN or AlGaN, an AlGaN or AlN nucleation auxiliary layer grows on the top layer of the 2D material ultrathin intermediate layer by virtue of Van der Waals epitaxy, and a GaN single crystal epitaxial layer is arranged on the AlGaN or AlN nucleation auxiliary layer.

The thickness of the 2D material ultrathin medium layer is more than 0.5 nm.

The 2D material ultrathin intermediate layer is a 2D layer suitable for GaN, AlGaN or AlN epitaxy.

The 2D material ultrathin intermediate layer is of a single-layer structure and only has a top layer, and the top layer is made of a 2D material suitable for GaN, AlGaN or AlN epitaxy.

The 2D material ultrathin intermediate layer is of a composite layer structure formed by a top layer and a bottom layer, the top layer is made of a 2D material suitable for AlN, AlGaN or GaN epitaxy, and the bottom layer is made of a 2D material suitable for serving as a single crystal base layer.

Said top layer employing WS₂Or MoS₂(ii) a The bottom layer adopts hBN.

The mismatching degree of the lattice constant a of the top layer of the single-layer structure or the composite-layer structure of the 2D material ultrathin intermediate layer and AlN, AlGaN or GaN is not more than 20%, and the 2D material ultrathin intermediate layer is suitable for AlN, AlGaN or GaN epitaxy.

At least the top layer of the polycrystalline orientation 2D material ultrathin medium layer is composed of two crystalline regions (domains) which form an angle of 60 degrees with each other.

Silicon dioxide (SiO) is added between the surface of the monocrystalline silicon substrate and the polycrystalline-oriented 2D material ultrathin intermediate layer₂) Layer to promote the dielectricity of silicon base plate, promote high frequency assembly application performance.

After the scheme is adopted, the utility model discloses with the help of the application of the ultra-thin intermediate layer of polycrystalline orientation 2D material and Van Der Waals Epitaxy (VDWE), can grow the stratiform that the crystallization is good and have two kinds (0 and 60) of polycrystal orientation 2D material layers that crystallization zone (domain) points to on the c face (c-plane) sapphire surface of single crystal earlier; the 2D material layer is transferred to the surface of the single crystal silicon substrate to form a substrate with a surface layer lattice constant highly matched with AlN, AlGaN and GaN, so that the defect quality problem of a gallium nitride layer caused by lattice mismatch of heteroepitaxy can be effectively solved; the nature of the van der waals interface may alleviate thermal stress problems due in part to the difference in thermal expansion coefficients. Therefore, the substrate structure of the present invention is advantageous for growing high quality GaN epitaxial layer to perform fabrication of the equal wide band gap photovoltaic and semiconductor devices of GaN system.

Drawings

FIG. 1 is a schematic diagram of a gallium nitride (GaN-on-Si) structure on a silicon wafer according to the prior art;

fig. 2 is a schematic structural diagram of an embodiment of the present invention;

FIG. 3 is a schematic structural diagram of a second embodiment of the present invention;

FIG. 4 is a schematic diagram of a third embodiment of the present invention;

fig. 5 is a schematic structural diagram of the fourth embodiment of the present invention;

fig. 6 is a schematic structural diagram of the fifth embodiment of the present invention.

Detailed Description

The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.

Fig. 2-6 show several embodiments of GaN-on-Si epitaxial substrates on silicon with 2D intermediate layers of material according to the present invention.

In the first embodiment shown in fig. 2, the GaN-on-Si epitaxial substrate on silicon with 2D intermediate layers of material comprises a monocrystalline silicon wafer substrate 1; the silicon wafer substrate 1 is provided with a 2D material ultrathin medium layer with multiple crystal orientations, the 2D material ultrathin medium layer with multiple crystal orientations only has a top layer 21, namely the 2D material ultrathin medium layer is of a single-layer structure, the top layer 21 is a 2D material suitable for GaN epitaxy, and the lattice constant of the top layer 21 is highly matched with that of GaN; on the top layer 21 of the 2D material ultra-thin interposer is grown by van der waals epitaxy a GaN single crystal epitaxial layer 3.

In the second embodiment shown in fig. 3, in the first embodiment, the 2D material ultra-thin interposer is a composite layer structure instead of a single layer structure, that is, the 2D material ultra-thin interposer is a composite layer structure formed by a top layer 21 and a bottom layer 22, the top layer 21 is a 2D material suitable for GaN epitaxy, the lattice constant of the top layer 21 is highly matched with GaN, and the bottom layer 22 is a 2D material suitable for serving as a single crystal base layer; on the top layer 21 of the 2D material ultra-thin interposer is grown by van der waals epitaxy a GaN single crystal epitaxial layer 3.

In the third embodiment shown in FIG. 4, the GaN-on-Si epitaxial substrate on silicon with 2D intermediate layer comprises a single crystal silicon wafer substrate 1; the silicon wafer substrate 1 is provided with a 2D material ultrathin medium layer with multiple crystal orientations, the 2D material ultrathin medium layer with multiple crystal orientations only has a top layer 21, namely the 2D material ultrathin medium layer is of a single-layer structure, the top layer 21 is a 2D material suitable for AlN or AlGaN epitaxy, and the lattice constant of the top layer 21 is highly matched with that of AlN or AlGaN; an AlGaN or AlN nucleation auxiliary layer 4 grows on the top layer 21 of the 2D material ultrathin intermediate layer through Van der Waals epitaxy, and a GaN single crystal epitaxial layer 3 is arranged on the AlGaN or AlN nucleation auxiliary layer 4.

In the fourth embodiment shown in FIG. 5, the GaN-on-Si epitaxial substrate on silicon with 2D intermediate layer comprises a single crystal silicon wafer substrate 1; the silicon wafer substrate 1 is provided with a 2D material ultrathin medium layer with multiple crystal orientations, the 2D material ultrathin medium layer is of a composite layer structure formed by a top layer 21 and a bottom layer 22, the top layer 21 is made of a 2D material suitable for AlN or AlGaN epitaxy, the lattice constant of the top layer 21 is highly matched with that of AlN or AlGaN, and the bottom layer 22 is made of a 2D material suitable for serving as a single crystal base layer; an AlGaN or AlN nucleation auxiliary layer 4 grows on the top layer 21 of the 2D material ultrathin intermediate layer through Van der Waals epitaxy, and a GaN single crystal epitaxial layer 3 is arranged on the AlGaN or AlN nucleation auxiliary layer 4.

In the fifth embodiment shown in fig. 6, the difference from the first embodiment is that silicon dioxide (SiO) is added between the surface 1 of the single-crystal silicon substrate and the ultra-thin interpoly 2D material₂) And the layer 5 is used for improving the dielectric property of the silicon substrate and improving the application performance of the high-frequency component. Specifically, a silicon wafer substrate 1 is covered with silicon dioxide (SiO)₂) Layer 5 on silicon dioxide (SiO)₂) The layer 5 is provided with a 2D material ultrathin intermediate layer with multiple crystal orientations, the 2D material ultrathin intermediate layer with multiple crystal orientations only has a top layer 21, namely the 2D material ultrathin intermediate layer is of a single-layer structure, the top layer 21 is a 2D material suitable for GaN epitaxy, and the lattice constant of the top layer 21 is highly matched with that of GaN; on the top layer 21 of the 2D material ultra-thin interposer is grown by van der waals epitaxy a GaN single crystal epitaxial layer 3. Of course, the present invention can also add silicon dioxide (SiO) between the single crystal silicon substrate surface 1 and the polycrystalline-to-2D material ultra-thin interposer of the second to fourth embodiments₂) And the layer 5 is used for improving the dielectric property of the silicon substrate and improving the application performance of the high-frequency component. Not shown one by one herein.

The optimal design of the ultra-thin intermediate layer of 2D material is that thickness is greater than 0.5 nm. The 2D material ultrathin intermediate layer is a 2D layer suitable for GaN, AlGaN or AlN epitaxy. Wherein said top layer 21 can adopt WS₂Or MoS₂Etc.;the underlayer 22 may be hBN or the like.

TABLE 2

Material	Lattice constant a (nm)
		Hexagonal boron nitride hBN	0.25
Graphene	0.246
		WS₂	0.318
MoS₂	0.3161
		WSe₂	0.3297
MoSe₂	0.3283

The lattice constant a of the top layer 21 of the 2D material ultrathin intermediate layer in a single-layer structure or a composite layer structure is not more than 20% of mismatching degree with AlN, AlGaN or GaN, and the 2D material ultrathin intermediate layer is suitable for AlN, AlGaN or GaN epitaxy. At least the top layer 21 of the polycrystalline orientation 2D material ultrathin medium layer is composed of two crystalline regions (domains) which form an angle of 60 degrees with each other.

The utility model discloses preparation method of gallium nitride GaN-on-Si epitaxial substrate on silicon with 2D material intermediate level, the step is as follows:

step 1, using a silicon single crystal substrate (chip) conforming to the epitaxial growth grade as a starting material, and preparing a subsequent manufacturing process by proper pretreatment (including chip cleaning);

step 2, growing a polycrystalline direction 2D material layer on the surface of the c-plane sapphire chip by using the existing manufacturing process;

step 3, growing an applicable 2D layer from the surface of the sapphire in the existing process, then peeling the layer, and transferring the layer to the surface of the silicon single crystal substrate;

step 4, utilizing Van der Waals epitaxy technology, and continuing to perform subsequent GaN epitaxy on the silicon single crystal substrate with the polycrystalline orientation 2D material layer on the surface in the step 3; or coating the AlN or AlGaN nucleating layer and continuing to perform GaN epitaxy.

The foregoing is only a preferred embodiment of the present invention, and is not intended to limit the scope of the invention. It should be noted that after reading this description, those skilled in the art can make equivalent changes according to the design concept of the present application, which fall within the protection scope of the present application.

Claims

1. A GaN-on-silicon GaN-on-Si epitaxial substrate with a 2D material interlayer, comprising a monocrystalline silicon wafer substrate;

2. Gallium nitride-on-silicon GaN-on-Si epitaxial substrate with 2D material interlayer on silicon according to claim 1 characterized in that: the thickness of the 2D material ultrathin medium layer is more than 0.5 nm.

3. Gallium nitride-on-silicon GaN-on-Si epitaxial substrate with 2D material interlayer on silicon according to claim 1 characterized in that: the 2D material ultrathin intermediate layer is a 2D layer suitable for GaN, AlGaN or AlN epitaxy.

4. Gallium nitride-on-silicon GaN-on-Si epitaxial substrate with 2D material interlayer on silicon according to claim 1 characterized in that: the 2D material ultrathin intermediate layer is of a single-layer structure and only has a top layer, and the top layer is made of a 2D material suitable for GaN, AlGaN or AlN epitaxy.

5. Gallium nitride-on-silicon GaN-on-Si epitaxial substrate with 2D material interlayer on silicon according to claim 1 characterized in that: the 2D material ultrathin intermediate layer is of a composite layer structure formed by a top layer and a bottom layer, the top layer is made of a 2D material suitable for AlN, AlGaN or GaN epitaxy, and the bottom layer is made of a 2D material suitable for serving as a single crystal base layer.

6. Gallium nitride-on-silicon GaN-on-Si epitaxial substrate with 2D intermediate layer of material according to claim 4 or 5, characterized in that: the mismatching degree of the lattice constant a of the top layer of the single-layer structure or the composite-layer structure of the 2D material ultrathin intermediate layer and AlN, AlGaN or GaN is not more than 20%, and the 2D material ultrathin intermediate layer is suitable for AlN, AlGaN or GaN epitaxy.

7. Gallium nitride-on-silicon GaN-on-Si epitaxial substrate with 2D intermediate layer of material according to claim 4 or 5, characterized in that: said top layer employing WS₂Or MoS₂。

8. Gallium nitride-on-silicon GaN-on-Si epitaxial substrate with 2D material interlayer on silicon according to claim 5, characterized in that: the bottom layer adopts hBN.

9. Gallium nitride-on-silicon GaN-on-Si epitaxial substrate with 2D material interlayer on silicon according to claim 1 characterized in that: at least the top layer of the polycrystalline-orientation 2D material ultrathin medium layer is composed of two crystal areas which form an angle matching direction of 60 degrees with each other.

10. Gallium nitride-on-silicon GaN-on-Si epitaxial substrate with 2D material interlayer on silicon according to claim 1 characterized in that: silicon dioxide SiO is added between the surface of the single crystal silicon substrate and the polycrystalline 2D material ultrathin intermediate layer₂And (3) a layer.