CN212365923U - Semiconductor memory forming die - Google Patents
Semiconductor memory forming die Download PDFInfo
- Publication number
- CN212365923U CN212365923U CN202020841363.9U CN202020841363U CN212365923U CN 212365923 U CN212365923 U CN 212365923U CN 202020841363 U CN202020841363 U CN 202020841363U CN 212365923 U CN212365923 U CN 212365923U
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- Prior art keywords
- die
- grooves
- semiconductor memory
- groove
- mould
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
- 238000005520 cutting process Methods 0.000 claims abstract description 22
- 238000004512 die casting Methods 0.000 claims description 20
- 238000000465 moulding Methods 0.000 claims description 9
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 7
- 230000002950 deficient Effects 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 5
- 230000015654 memory Effects 0.000 description 6
- 238000003466 welding Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
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Abstract
The utility model provides a semiconductor memory forming die, relating to the technical field of semiconductor dies, wherein a plurality of die grooves are arranged on the top surface of a lower die in parallel, the front ends of the die grooves are provided with a plurality of through grooves which are integrated with the die grooves and penetrate out of the front wall of the lower die, the top ends of the through grooves and the positions close to the die grooves are provided with cutting grooves, later-stage operators only need to weld pin pins on a circuit board of the semiconductor memory without manually holding the pin pins, the defective rate is reduced, the upper die is positioned right above the lower die, and the four corners of the bottom of the upper die are penetrated with positioning pins, the tail ends of the positioning pins are respectively fixedly connected with the four corners of the top surface of the lower die, when the finished product of the semiconductor memory is taken out, can be easily stripped, is convenient for operators to take out the semiconductor memory, solves the problems of complicated traditional processing process, and the precision required for the pin bonding is high, which leads to a problem of an increase in yield of defective products.
Description
Technical Field
The utility model belongs to the technical field of the semiconductor die technique and specifically relates to a semiconductor memory forming die is related to.
Background
A semiconductor memory is a memory having a semiconductor circuit as a storage medium, and an internal memory is composed of a semiconductor integrated circuit called a memory chip. According to its function can be divided into: random access memory (RAM for short) and read only memory (ROM for read only). The volume is small, the storage speed is fast, the storage density is high, the interface with the logic circuit is easy, the forming die, also called a section die, is manufactured according to the shape and the structure of the real object in proportion, and the material is made into a tool with a certain shape by a pressing or pouring method.
Because the semiconductor memory has a plurality of pin needles, most of the existing manufacturing methods are to mold the main body of the semiconductor memory first and then weld the pin needles on the circuit board of the semiconductor memory, the processing process is complicated, the accuracy required by the pin needle welding is high, and the step of manually holding the pin needles for welding is easy to shake, which leads to the increase of the yield of defective products.
SUMMERY OF THE UTILITY MODEL
The to-be-solved technical problem of the utility model is: the traditional processing process is complicated, the precision required by pin welding is high, the yield of defective products is increased, and the semiconductor memory forming die is provided for solving the problems in the prior art.
The to-be-solved technical problem of the utility model adopts following technical scheme to realize: a semiconductor memory molding die, the semiconductor memory molding die comprising:
the die comprises a lower die, a plurality of die grooves are formed in the top surface of the lower die in parallel, a plurality of through grooves which are integrated with the die grooves and penetrate through the front wall of the lower die are formed in the front ends of the die grooves, cutting grooves are formed in the top ends of the through grooves and are close to the die grooves, the top ends of the cutting grooves penetrate through the top surface of the lower die, bottom grooves are formed in the lower die and are positioned on the bottom surfaces of the die grooves, and the bottom grooves are communicated with all the die grooves;
the rubber pad is attached to the right side of the lower die, an opening is formed in the center of the rubber pad, the shape and the position of the opening are communicated with the bottom groove, and an inserting column is inserted into the opening;
go up the mould, go up the mould and be located directly over the lower mould, and go up mould bottom four corners and all run through the pilot pin, four the terminal fixed connection in lower mould top surface four corners respectively of pilot pin, and go up mould bottom fixedly connected with and the same die-casting piece of mould groove quantity side by side, it has and cuts the same contact pin of groove quantity with the melting joint to go up mould bottom and be located die-casting piece front end.
Preferably, the cutting grooves and the through grooves are arranged in a T shape, and the cutting grooves and the through grooves are matched one to one.
Preferably, the inserting columns are sequentially inserted into the opening and the bottom groove, the length of each inserting column is the same as that of the lower die, and the shape of each inserting column conforms to that of the bottom groove and the opening.
Preferably, the rubber pad shields a connecting gap between the inserting column and the bottom groove.
Preferably, the upper die covers the lower die, the die-casting block corresponds to the die groove in position, and the die-casting block is inserted into the die groove.
Preferably, the contact pins correspond to the cutting grooves one to one, and the contact pins are inserted in the cutting grooves.
Compared with the prior art, the beneficial effects of the utility model are that:
the contact pin can insert and cut off the pin needle in the middle of cutting the groove, and the pin needle of a segment can stay this moment and lead to the inslot, and the segment pin needle that will cut inserts semiconductor memory inside, and the pin needle can be blocked in the middle of the semiconductor memory, later stage operating personnel only need with the pin needle welding on the circuit board of semiconductor memory can, do not need the manual work to hold the pin needle, reduce the defective index.
And finally, when an operator needs to take out the finished semiconductor memory product, the inserting column can be drawn out from the bottom groove and the open groove, the die groove is communicated with the bottom groove, air enters the die groove at the moment, so that the operating operator can easily remove the film when taking out the finished semiconductor memory product, and the operating operator can conveniently take out the semiconductor memory.
Drawings
Fig. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a right side schematic view of the lower mold structure of the present invention;
FIG. 3 is an enlarged schematic view of the rubber pad structure of the present invention;
FIG. 4 is a schematic view of the assembly of the post structure of the present invention;
fig. 5 is a schematic view of the upper mold structure of the present invention.
The labels in the figure are: the die comprises a lower die 1, a die groove 101, a bottom groove 102, a through groove 2, a cutting groove 3, a rubber pad 4, an opening 401, an inserting column 5, an upper die 6, a positioning pin 601, a die casting block 7 and an inserting pin 701.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention will be described in detail with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1 to 5, the present invention provides a semiconductor memory molding die, which is described in detail below:
the die comprises a lower die 1, wherein a plurality of die grooves 101 are formed in the top surface of the lower die 1 in parallel, a plurality of through grooves 2 which are integrated with the die grooves 101 and penetrate through the front wall of the lower die 1 are formed in the front ends of the die grooves 101, cutting grooves 3 are formed in the top ends of the through grooves 2 and close to the die grooves 101, the top ends of the cutting grooves 3 penetrate through the top surface of the lower die 1, bottom grooves 102 are formed in the lower surface of the die grooves 101 and inside the lower die 1, the bottom grooves 102 are communicated with all the die grooves 101, when an operator uses the die, the lower die 1 can be installed on a workbench firstly, and in order to avoid the inclination in the die-casting process, the lower die 1 is kept in a horizontal state;
the upper die 6 is positioned right above the lower die 1, the four corners of the bottom of the upper die 6 are all penetrated by positioning needles 601, the tail ends of the four positioning needles 601 are respectively and fixedly connected with the four corners of the top surface of the lower die 1, the bottom of the upper die 6 is fixedly connected with die-casting blocks 7 with the same number as that of the die grooves 101 in parallel, the front ends of the die-casting blocks 7 at the bottom of the upper die 6 and positioned at the front ends of the die-casting blocks 7 are welded with contact pins 701 with the same number as that of the cutting grooves 3, and an operator needs to install the upper die 6 on hydraulic equipment for stamping;
the rubber pad 4 is attached to the right side of the lower die 1, an opening 401 is formed in the center of the rubber pad 4, the shape and the position of the opening 401 are communicated with the bottom groove 102, an inserting column 5 is inserted into the opening 401, the inserting column 5 is sequentially inserted into the opening 401 and the bottom groove 102, the length of the inserting column 5 is the same as that of the lower die 1, and the shape of the inserting column 5 is consistent with that of the bottom groove 102 and the opening 401;
after the whole die is installed, an operator can take the inserting column 5 up, insert the inserting column 5 into the opening 401, push the inserting column 5 into the bottom groove 102 until the inserting column 5 is completely inserted into the bottom groove 102, the inserting column 5 can block the bottom groove 102 at the moment, the bottom of the die groove 101 is not communicated with the inside of the bottom groove 102, the rubber pad 4 shields a connecting gap between the inserting column 5 and the bottom groove 102, and the sealing performance of the connection between the inserting column 5 and the bottom groove 102 can be ensured by the rubber pad 4 at present;
then an operator puts the semiconductor memories to be molded into the die groove 101, the die groove 101 is provided with a plurality of die grooves 101, batch die casting can be carried out, the uncut pin pins with longer length are inserted into the through grooves 2 one by one, the rear ends of the pin pins can be inserted into the semiconductor memories through the through grooves 2 and are directly connected with the semiconductor memories, the upper die 6 is driven by external hydraulic equipment for stamping to move downwards, and in the process of moving downwards of the upper die 6, the positioning pin 601 plays a role in positioning, so that the upper die 6 can carry out stable vertical movement;
the upper die 6 covers the lower die 1, the die-casting block 7 corresponds to the die groove 101, the die-casting block 7 is inserted into the die groove 101, the die-casting block 7 corresponds to the die groove 101 along with the continuous downward movement of the upper die 6, the stamping effect is achieved through the die-casting block 7, the shapes of the die groove 101 and the die-casting block 7 are in accordance with the shape of a semiconductor memory, and the semiconductor memory raw material in the die groove 101 forms the shape of the semiconductor memory at the moment through the compression of the die-casting block 7;
the cutting groove 3 and the through groove 2 are arranged in a T shape, the cutting groove 3 and the through groove 2 are used in a one-to-one matching mode, the contact pins 701 correspond to the cutting groove 3 one by one, the contact pins 701 are inserted into the cutting groove 3 to cut off the contact pins when the upper die 6 descends, a small section of the contact pins are remained in the through groove 2 at the moment, an operator pushes the longer section of the contact pins into the through groove 2 to insert the cut small section of the contact pins into the semiconductor memory to complete the connection between the contact pins and the semiconductor memory, the contact pins are clamped in the semiconductor memory, and the later-stage operator only needs to weld the contact pins on a circuit board of the semiconductor memory without manually holding the contact pins, so that the defective product rate is reduced;
finally, when an operator needs to take out the finished semiconductor memory product, the inserting column 5 can be drawn out from the bottom groove 102 and the open groove, after the inserting column 5 exits from the bottom groove 102, the die groove 101 is communicated with the bottom groove 102 again, the inside of the bottom groove 102 is in a hollow state, and similarly, air can enter the inside of the die groove 101, and after the bottom of the die groove 101 has a space, the operator can easily remove the film when taking out the finished semiconductor memory product, so that the operator can take out the semiconductor memory product.
It should be understood that any modification, equivalent replacement, and improvement made within the spirit and principles of the present invention should be included within the scope of the present invention.
Claims (6)
1. A semiconductor memory molding die, characterized by comprising:
the die comprises a lower die (1), wherein a plurality of die grooves (101) are formed in the top surface of the lower die (1) in parallel, a plurality of through grooves (2) penetrating through the front end of the lower die (1) are formed in the front ends of the die grooves (101), cutting grooves (3) are formed in the positions, close to the die grooves (101), of the top ends of the through grooves (2), the top ends of the cutting grooves (3) penetrate through the top surface of the lower die (1), and bottom grooves (102) are formed in the bottoms of the die grooves (101);
the rubber pad (4) is attached to the right side of the lower die (1), an opening (401) is formed in the center of the rubber pad (4), the shape and the position of the opening (401) are communicated with the bottom groove (102), and an inserting column (5) is inserted into the opening (401);
go up mould (6), it is located directly over lower mould (1) to go up mould (6), and goes up mould (6) bottom four corners and all run through locating pin (601), four locating pin (601) end fixed connection respectively in lower mould (1) top surface four corners, and goes up mould (6) bottom fixedly connected with and mould groove (101) the same die-casting piece (7) of quantity side by side, it has and cuts contact pin (701) that groove (3) quantity is the same just to be located die-casting piece (7) front end melt joint to go up mould (6) bottom.
2. The semiconductor memory molding die of claim 1, wherein: the cutting grooves (3) and the through grooves (2) are arranged in a T shape, and the cutting grooves (3) and the through grooves (2) are matched one to one.
3. The semiconductor memory molding die of claim 1, wherein: the inserting columns (5) are sequentially inserted into the middle of the opening (401) and the bottom groove (102), the lengths of the inserting columns (5) and the lower die (1) are the same, and the shapes of the inserting columns (5) are consistent with those of the bottom groove (102) and the opening (401).
4. The semiconductor memory molding die according to claim 3, wherein: the rubber pad (4) is shielded in a connecting gap between the inserting column (5) and the bottom groove (102).
5. The semiconductor memory molding die of claim 1, wherein: the upper die (6) covers the lower die (1), the die casting block (7) corresponds to the die groove (101), and the die casting block (7) is inserted into the die groove (101).
6. The semiconductor memory molding die of claim 1, wherein: the pins (701) correspond to the cutting grooves (3) one by one, and the pins (701) are inserted into the cutting grooves (3).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202020841363.9U CN212365923U (en) | 2020-05-19 | 2020-05-19 | Semiconductor memory forming die |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202020841363.9U CN212365923U (en) | 2020-05-19 | 2020-05-19 | Semiconductor memory forming die |
Publications (1)
Publication Number | Publication Date |
---|---|
CN212365923U true CN212365923U (en) | 2021-01-15 |
Family
ID=74148477
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN202020841363.9U Expired - Fee Related CN212365923U (en) | 2020-05-19 | 2020-05-19 | Semiconductor memory forming die |
Country Status (1)
Country | Link |
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CN (1) | CN212365923U (en) |
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2020
- 2020-05-19 CN CN202020841363.9U patent/CN212365923U/en not_active Expired - Fee Related
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20210115 |
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CF01 | Termination of patent right due to non-payment of annual fee |