CN212209523U

CN212209523U - Device for processing semiconductor or photovoltaic material

Info

Publication number: CN212209523U
Application number: CN202020158250.9U
Authority: CN
Inventors: 林佳继; 刘群; 庞爱锁; 林依婷
Original assignee: Laplace Wuxi Semiconductor Technology Co Ltd
Current assignee: Laplace Wuxi Semiconductor Technology Co Ltd
Priority date: 2020-02-10
Filing date: 2020-02-10
Publication date: 2020-12-22
Anticipated expiration: 2030-02-10

Abstract

The utility model provides a device for processing of semiconductor or photovoltaic material, including silicon chip carrier and electrode mechanism, electrode mechanism includes electrode group structure and electrode holder structure, the electrode holder structure can with the switch-on of electrode group structure or disconnection, the electrode group structure sets up in the vacuum furnace intracavity, the electrode holder structure sets up on vacuum furnace chamber upper portion, the silicon chip carrier with the electrode group structure can combine or separate in the vacuum furnace intracavity, be equipped with the fretwork position on the silicon chip carrier, can satisfy the demand of the two-sided processing of silicon chip. By adopting the electrode mechanism of the utility model, the structure and the process of the coating equipment can be more reasonable.

Description

Device for processing semiconductor or photovoltaic material

Technical Field

The utility model relates to a solar cell makes the field, especially relates to a device for processing of semiconductor or photovoltaic material.

Background

Semiconductor or photovoltaic materials are widely applied to industries such as electronics, new energy and the like, the semiconductor and photovoltaic materials can be applied to products generally through processing treatment, and a coating process, a diffusion process and an oxidation process are some existing treatment modes.

The vacuum furnace is one of important devices of semiconductor device process equipment, is widely applied to the industries of integrated circuits, power electronics, solar cell production and the like, and is mainly used for doping monocrystalline silicon wafers and polycrystalline silicon wafers to form PN junctions in the photovoltaic industry. With the development of the photovoltaic industry, people are always pursuing the improvement of the productivity. During the fabrication process, there are many thermal processes, such as thermal oxidation, Chemical Vapor Deposition (CVD), thermal diffusion, metal alloying, impurity activation, dielectric film densification, etc. These thermal treatment processes are very sensitive to temperature, which is a critical parameter affecting the film formation uniformity and growth rate of silicon crystals, especially in the fabrication of semiconductor devices.

In the aspect of semiconductor or photovoltaic material processing, CVD technology is one of the processing methods, CVD technology is currently widely used in semiconductor or photovoltaic material processing, common processing apparatuses include PECVD, LPCVD, APCVD, etc., diffusion apparatuses are provided in addition to CVD apparatuses, for example, phosphorus diffusion and boron diffusion apparatuses are used to process raw materials by gas diffusion, there are many apparatuses related to the industry currently, corresponding apparatuses can be selected for specific processing requirements to process, semiconductor or photovoltaic material processing is usually realized by feeding a sheet material into a furnace to react under certain temperature and pressure conditions, apparatuses are usually used to load or move materials to be processed, processed or processed during semiconductor or photovoltaic material processing, and such loaded or moved apparatuses are usually called boats in the industry, Graphite boat, or basket.

In the solar photovoltaic industry, PECVD is often used to prepare thin films such as silicon nitride films, silicon carbide films, silicon oxide films, and the like; the traditional PECVD coating film is generally a single-sided coating film, the traditional production equipment is easy to cause winding coating and can not avoid the problem of sticking point printing, and the traditional equipment is not suitable any more when the requirement on the single-sided property of the film is high. Meanwhile, the problems of silicon chip deformation, high fragment rate and the like in the production process are easily caused to the ultrathin silicon chip.

In the process of processing reaction, in order to carry out the surface film growth of silicon chip, need let the silicon chip be in the atmosphere of certain condition, for example, plasma state, just can satisfy the technological condition of film growth under this condition, usually can set up electrode structure on the graphite boat, for example, silicon chip carrier itself has electrode structure, can circular telegram make near the gas of silicon chip carrier be in the state of plasmatizing in production, but because graphite boat and silicon chip structure need the interval to set up, the silicon chip need block in the draw-in groove on graphite boat piece, when carrying out the inserted sheet in the draw-in groove of graphite boat piece, damage silicon chip or electrode piece easily.

Disclosure of Invention

The utility model aims to solve the technical problem that a device for processing of semiconductor or photovoltaic material is provided, can overcome the problem in the background art.

The utility model provides a technical scheme that above-mentioned technical problem adopted is:

the utility model provides a device for processing of semiconductor or photovoltaic material, includes silicon chip carrier and electrode mechanism, electrode mechanism includes electrode group structure and electrode holder structure, the electrode holder structure can with the switch-on of electrode group structure or disconnection, the electrode group structure sets up in the vacuum furnace intracavity, the electrode holder structure sets up on vacuum furnace chamber upper portion, the silicon chip carrier with the electrode group structure can combine or separate in the vacuum furnace intracavity, the silicon chip carrier can remove under elevating system's drive.

Furthermore, the silicon wafer carrier comprises a plurality of frames which are arranged at equal intervals, an isolation support is arranged in each frame, and the isolation support isolates the hollow parts in each frame into at least two hollow areas.

Furthermore, one side of the frame is provided with an installation part, the installation part is used for installing and fixing the silicon wafer carrier, and the installation part is provided with at least one installation hole.

The silicon wafer carrier is characterized by further comprising mounting rods, the mounting rods correspond to the mounting holes one to one, and the frame is sleeved on the mounting rods through the mounting holes to form a silicon wafer carrier with an upper structure and a lower structure.

Furthermore, the fretwork position is equipped with the stuck point, the stuck point is located on the inside wall at fretwork position, and sets up the position that is close to the lower surface on the inside wall.

Furthermore, the electrode group structure comprises an electrode group positive electrode block and an electrode group negative electrode block, the electrode group positive electrode block and the electrode group negative electrode block are respectively provided with a placing part of a graphite electrode slice, and the placing parts of the electrode group positive electrode block and the electrode group negative electrode block are arranged in a staggered mode.

Furthermore, the placing part comprises clamping grooves for clamping graphite electrode plates, and the clamping grooves on the electrode positive block and the electrode negative block are arranged in a staggered mode in the height direction of the electrode blocks.

Furthermore, an electrode group pushing mechanism and an electrode group pushing opening are arranged on one side of the vacuum furnace chamber, the electrode pushing mechanism comprises an electrode group pushing cylinder, the output end of the electrode group pushing cylinder is connected with an electrode group pushing rod through a cylinder connecting shaft, and the electrode group pushing rod penetrates through the electrode group pushing opening and can push the electrode group structure.

Furthermore, a boosting plate is arranged on one side of the bottom of the electrode group structure, and the electrode group pushing rod can extend into the vacuum furnace cavity and push against the boosting plate, so that the electrode group structure is pushed; an electrode group pushing cylinder is mounted on a cylinder mounting flange, the outer side of an electrode group pushing opening is sealed through a cavity welding flange, and a movable sealing flange is arranged between the cylinder mounting flange and the cavity welding flange; the movable sealing flange is characterized in that a movable sealing flange end cover is arranged in the movable sealing flange, at least two sealing rings are arranged in the movable sealing flange end cover, and the sealing rings are compressed through sealing ring compression rings.

Further, the electrode holder comprises an electrode support and an electrode driving cylinder, the electrode support is provided with an electrode column and a sliding sealing structure of the electrode column, the electrode column can penetrate through the upper surface of the vacuum furnace chamber and extend into the vacuum furnace chamber, when the electrode group structure in the furnace moves to a film coating station, the electrode columns at the positive pole and the negative pole can move downwards along the sliding structure under the driving of the electrode driving cylinder, and respectively touch a positive pole block and a negative pole block of the electrode group in the vacuum furnace chamber.

The utility model has the advantages that:

(1) the electrode structure of the utility model comprises an independent graphite electrode structure consisting of graphite electrode plates, the graphite electrode structure does not bear a silicon wafer, and the graphite electrode structure is always positioned in a vacuum furnace body for silicon wafer reaction, when the silicon wafer enters the vacuum furnace cavity along with a silicon wafer carrier, the graphite electrode can move in the furnace body and is butted with the bearing structure of the silicon wafer to form a whole reaction body, after the reaction is finished, the graphite electrode structure can withdraw from the silicon wafer carrier, the silicon wafer carrier independently leaves the furnace body, under the design of the utility model, the graphite electrode does not move along with the feeding and discharging of the silicon wafer, as for the graphite electrode, only slowly moves in a small range in the vacuum furnace cavity, the structure is fixed, the property is stable, the graphite electrode structure is not easily influenced by other structures, and the graphite electrode structure and the silicon wafer are arranged in series, make the loading of silicon chip also more convenient, adopted the utility model discloses an electrode mechanism can make the structure and the technology of filming equipment all more reasonable.

(2) The utility model discloses a fretwork carrier for load the silicon chip, make two upper and lower surfaces of silicon chip all can expose and carry out the coating film production, promoted coating film output at double, and, the utility model discloses a silicon chip carrier can be used for horizontal inserted sheet and horizontal coating film, can effectively avoid around plating the problem.

Drawings

Fig. 1 is an overall schematic view of the silicon wafer carrier of the present invention.

Fig. 2 is a schematic view of a frame in the silicon wafer carrier of the present invention.

Fig. 3 is an overall structure diagram of the present invention, in which the electrode group structure and the silicon wafer carrier are separated.

Fig. 4 is a side schematic view of fig. 3.

Fig. 5 is an overall structure diagram of the present invention, and the electrode group structure and the silicon wafer carrier are in a combined state at this time.

Fig. 6 is an enlarged view of the electrode group pushing mechanism of the present invention.

Reference numbers in the figures: the electrode assembly comprises a graphite electrode slice 100, an electrode assembly positive electrode block 101, an electrode assembly negative electrode block 102, a top plate 103, a bottom plate 104, a step 105, a first boss 1051, a second boss 1052, a salient point 1053, a slope 1054, a transverse sliding block 107, a vacuum furnace chamber 200, an electrode assembly translation guide rail 201, an electrode assembly pushing hole 202, an electrode assembly pushing cylinder 203, an output end 204, a cylinder connecting shaft 205, an electrode assembly pushing rod 206, a boosting plate 207, a cylinder mounting flange 208, a cavity welding flange seal 209, a dynamic sealing flange 210, a dynamic sealing flange end cover 211, a sealing ring 212, a sealing ring press ring 213, a cylinder fixing seat 300, an electrode support 301, an electrode driving cylinder 302, an electrode column 303, a sliding sealing structure 304, a silicon wafer carrier 400, a silicon wafer 401, a lifting mechanism 402, a frame 403, a hollowed-out part 404, an isolation support 405, a hollowed-out area 406, a mounting part, the furnace opening 500.

Detailed Description

The following detailed description of the embodiments of the present invention will be made with reference to the accompanying drawings, and it should be noted that the embodiments are merely illustrative of the present invention, and should not be construed as limiting the present invention in order to make those skilled in the art better understand and implement the present invention.

As shown in fig. 3-6, the utility model provides a device for processing of semiconductor or photovoltaic material, including silicon chip carrier 400 and electrode structure, electrode structure includes electrode group structure and electrode holder structure, the device is still including being used for carrying out coating film reaction's vacuum furnace chamber 200 to the silicon chip, electrode group structure sets up in vacuum furnace chamber 200, this electrode group structure includes multi-disc graphite electrode piece 100, multi-disc graphite electrode piece 100 is align to grid from top to bottom, interval between the adjacent graphite electrode piece 100 can satisfy the inserted sheet requirement of silicon chip, for example, the thickness of silicon chip is at 2.58mm, interval between the adjacent graphite electrode piece 100 is guaranteed more than 4mm so.

The electrode group structure further comprises an electrode group positive electrode block 101 and an electrode group negative electrode block 102, the electrode group positive electrode block 101 and the electrode group negative electrode block 102 are both long-strip-shaped and are arranged along the height direction of the diffusion device, the electrode group structure comprises at least one top plate 103 and at least one bottom plate 104, the upper end and the lower end of the electrode group positive electrode block 101 and the electrode group negative electrode block 102, the top plate 103 and the bottom plate 104 are fixedly installed, a certain horizontal distance is reserved between the electrode group positive electrode block 101 and the electrode group negative electrode block 102 to enable the electrode group positive electrode block and the electrode group negative electrode block to be insulated, the electrode group positive electrode block 101 and the electrode group negative electrode block 102 are respectively used for clamping a positive graphite electrode sheet and a negative graphite electrode sheet, the positive graphite electrode sheet and the negative graphite electrode sheet are arranged in a staggered mode, an electric field is formed between the whole electrode groups, and specifically, the electrode group positive electrode block 101 and the The draw-in groove 105, as shown in the figure, be equipped with first boss 1051 and second boss 1052 in the draw-in groove 105, wherein first boss, the lower surface of second boss 1052 is equipped with bump 1053, be used for withstanding graphite electrode piece 100, it corresponds with it, graphite electrode piece 100 can be equipped with the pit on corresponding position, with bump 1053 phase-match, thereby block graphite electrode piece 100, the step corner of first boss 1051 sets up the installation that domatic 1054 guide graphite electrode piece and prevents the fish tail electrode piece simultaneously, every draw-in groove 105 can both the centre gripping a slice graphite electrode piece 100, electrode group positive pole piece 101 with draw-in groove 105 dislocation arrangement on the electrode group negative pole piece 102, make anodal graphite electrode piece 100 and the graphite electrode piece 100 interval arrangement of negative pole, form holistic electrode group structure.

An electrode group translation guide rail 201 is arranged at the bottom of the vacuum furnace chamber 200, a transverse sliding block 107 is arranged at the bottom of the electrode group structure, and the transverse sliding block 107 can move on the electrode group translation guide rail 201, so that the electrode group structure is driven to move in the vacuum furnace chamber 200.

One side of vacuum furnace chamber 200 is equipped with electrode group propelling movement mechanism and electrode group propelling movement trompil 202, electrode group propelling movement mechanism includes electrode group propelling movement cylinder 203, and electrode group propelling movement cylinder 203's output 204 passes through cylinder connecting axle 205 and connects electrode group propelling movement pole 206, one side of the bottom of electrode group structure is equipped with boosting plate 207, electrode group propelling movement pole 206 can pass electrode group propelling movement trompil 202 and stretch into vacuum furnace chamber 200 in, the top supports boosting plate 207 to the propelling movement electrode group structure.

The electrode group pushing cylinder 203 is arranged on a cylinder mounting flange 208, the outer side of the electrode group pushing opening hole 202 is sealed through a cavity welding flange 209, and a movable sealing flange 210 is arranged between the cylinder mounting flange 208 and the cavity welding flange 209 in a sealing mode.

Be equipped with dynamic seal flange end cover 211 in the dynamic seal flange 210, be equipped with at least two sealing washer 212 in the dynamic seal flange end cover 211, compress tightly through sealing washer clamping ring 213 between the sealing washer 212.

The upper surface of the vacuum furnace chamber 200 is provided with an electrode holder structure, the electrode holder structure is internally provided with a positive electrode and a negative electrode, the positive electrode and the negative electrode can be conducted with the positive electrode and the negative electrode on the electrode group, and an electrode electric field is formed on the graphite electrode sheet. Specifically, the electrode holder structure comprises an electrode support 301, an electrode driving cylinder 302 and a cylinder fixing seat 300, wherein the electrode driving cylinder 302 is fixedly installed on the cylinder fixing seat 300, the electrode support 301 is provided with an electrode column 303 with positive and negative poles and a sliding sealing structure 304 of the electrode column, the electrode column 303 can move up and down under the driving of the electrode driving cylinder 302, the electrode column 303 can penetrate through the upper surface of the vacuum furnace chamber 200 to extend into the vacuum furnace chamber 200 and is sealed through the sliding sealing structure 304, when the electrode structure moves to a film coating station, the plasma electrode column 303 with positive and negative poles can move down along the sliding sealing structure 304 under the driving of the plasma driving cylinder 302 and respectively touch an electrode group positive electrode block 101 and an electrode group negative electrode block 102 which are located in the vacuum furnace chamber 200, so that an electrode is connected.

The polarities of the positive electrode block 101, the negative electrode block 102, and the graphite sheet of the electrode group may be adjusted according to the positive and negative polarities of the electrodes, or may be interchanged with each other.

As shown in fig. 1-2, the silicon wafer carrier of the present invention comprises at least one frame 403, a hollow portion 404 is disposed in the frame 403, and the whole frame 403 can be made of quartz material.

An isolation support 405 is arranged in a hollowed-out part 404 in the frame 403, two ends of the isolation support 405 are respectively and fixedly connected to the frame 403, the isolation support 405 is a cross-shaped support and divides the inside of the frame 403 into four same square hollowed-out areas 406, the shapes and the sizes of the hollowed-out areas 406 are matched with those of a silicon wafer, the silicon wafer can be just accommodated in the hollowed-out areas, and in some modes, the hollowed-out areas 406 can be isolated or designed according to the sizes of the silicon wafers.

The thickness of the frame 403 does not exceed the thickness of the silicon wafer, and when the frame is used, the silicon wafer can be loaded into the hollow area, and generally speaking, the loaded silicon wafer does not exceed the range of the hollow area, so that the film coating reaction on the surface of the silicon wafer is facilitated. Moreover, the width of the isolation support 405 is consistent with that of the frame 403, so that the peripheries of all the hollowed-out areas are equal in height, and the phenomenon of uneven reaction caused by inconsistent surrounding grids for the same silicon wafer is avoided.

Each hollowed-out area 406 is internally provided with a clamping point 410, the clamping points 410 can be arranged on the four walls of each hollowed-out area 406, the clamping points are positioned on the inner side wall of the hollowed-out part and are arranged at positions, close to the lower surface, on the inner side wall to serve as supports for the silicon wafer 100 in each hollowed-out area 406, therefore, the hollowed-out areas 406 and the clamping points 410 form a support structure for each silicon wafer, and the difference between the thicknesses of the hollowed-out areas 406 and the clamping points 13 is not smaller than the thickness of the silicon wafer, so that the silicon wafer can be placed in the hollowed-out areas.

Preferably, the clamping point 13 is a semicircular sheet, the outer part of which has no sharp protrusion and can not damage the silicon wafer or other objects which may be touched, the clamping point 13 is a semicircular sheet with a very small shape, so long as the semicircular sheet can sufficiently support the light silicon wafer, and the silicon wafer can not rapidly move during the firing and moving processes, so that the stability of the silicon wafer does not need to be considered particularly, and in some modes, the radius of the clamping point 13 is approximately the same as or slightly larger than the thickness of the silicon wafer.

The silicon wafer carrier mounting structure comprises a frame 403, wherein a mounting portion 407 is arranged on one side of the frame 403, the mounting portion 407 is used for mounting and fixing a silicon wafer carrier, at least two mounting holes 408 are formed in the mounting portion 407, the mounting holes 408 are symmetrical along the center line of the frame, the two mounting holes 408 can fix the direction of the frame 403, and the frame 403 is prevented from moving left and right, for example, if only one mounting hole 408 is formed, the frame 403 may shake left and right, which causes instability of the silicon wafer carrier.

With mounting hole 408 ground of matcing, the utility model discloses still including installation pole 409, the installation pole with the mounting hole one-to-one, the frame passes through the mounting hole suit on the installation pole, and whole silicon chip carrier has been constituteed to installation pole and frame, and this carrier can reciprocate through elevating gear, realizes the transform of station.

Through the mounting portions 407 and the mounting holes 408, the number of the mounting holes 408 may be one or more, a plurality of frames 403 may be strung in a row to form a whole silicon wafer carrier, the silicon wafer 100 may be loaded into the hollow area 406 by a suction cup or the like, and after the silicon wafer carrier is loaded with the silicon wafer, the silicon wafer carrier may be inserted into a graphite electrode sheet on the electrode structure to form a reaction state.

The vacuum furnace chamber 200 is provided with a furnace mouth 500, the silicon wafer carrier 400 is firstly loaded with a silicon wafer 401 at the hollow part, after the silicon wafer loading is finished, the silicon wafer carrier 400 is loaded on the furnace door, the furnace door descends to seal the furnace mouth 500, as shown in figures 3-4, then the electrode group structure is pushed in place, as shown in figure 5, the silicon wafer carrier is adjusted to move up and down in place through secondary lifting, an electrode on the electrode seat structure is pressed down to contact the electrode group structure, the coating process is started, after the processing is finished, the electrode seat structure moves up, the electrode group pushing structure pulls out the electrode group structure, the furnace door ascends, and the silicon wafer carrier is taken.

Claims

1. The device for processing the semiconductor or photovoltaic material is characterized by comprising a silicon wafer carrier and an electrode mechanism, wherein the electrode mechanism comprises an electrode group structure and an electrode holder structure, the electrode holder structure can be connected with or disconnected from the electrode group structure, the electrode group structure is arranged in a vacuum furnace cavity, the electrode holder structure is arranged at the upper part of the vacuum furnace cavity, the silicon wafer carrier and the electrode holder structure can be combined or separated in the vacuum furnace cavity, and the silicon wafer carrier can move under the driving of a lifting mechanism.

2. The apparatus of claim 1, wherein the silicon wafer carrier comprises a plurality of frames arranged at equal intervals, and an isolation support is arranged in each frame and used for isolating the hollowed-out part in each frame into at least two hollowed-out areas.

3. The apparatus as claimed in claim 2, wherein the frame has a mounting portion at one side thereof for mounting and fixing the silicon wafer carrier, and the mounting portion has at least one mounting hole.

4. The apparatus of claim 3, further comprising mounting rods, wherein the mounting rods correspond to the mounting holes one to one, and the frame is sleeved on the mounting rods through the mounting holes to form a silicon wafer carrier in an up-and-down structure.

5. The device of claim 2, wherein the hollowed-out portion is provided with a clamping point, and the clamping point is located on the inner side wall of the hollowed-out portion and is arranged on the inner side wall close to the lower surface.

6. The apparatus of claim 1, wherein the electrode assembly structure comprises an electrode assembly positive block and an electrode assembly negative block, the electrode assembly positive block and the electrode assembly negative block are respectively provided with a graphite electrode sheet placement portion, and the electrode assembly positive block and the electrode assembly negative block are staggered in placement portion.

7. The device for processing the semiconductor or photovoltaic material as claimed in claim 6, wherein the placing part comprises a clamping groove for clamping a graphite electrode plate, and the clamping grooves on the electrode group positive electrode block and the electrode group negative electrode block are arranged in a staggered mode in the height direction of the electrode blocks.

8. The apparatus of claim 1, wherein the vacuum chamber is provided with an electrode assembly pushing mechanism and an electrode assembly pushing opening at one side, the electrode assembly pushing mechanism comprises an electrode assembly pushing cylinder, an output end of the electrode assembly pushing cylinder is connected with an electrode assembly pushing rod through a cylinder connecting shaft, and the electrode assembly pushing rod can push the electrode assembly structure through the electrode assembly pushing opening.

9. The apparatus of claim 8, wherein a pushing plate is disposed on one side of the bottom of the electrode assembly structure, and the electrode assembly pushing rod can extend into the vacuum chamber to push against the pushing plate, so as to push the electrode assembly structure; an electrode group pushing cylinder is mounted on a cylinder mounting flange, the outer side of an electrode group pushing opening is sealed through a cavity welding flange, and a movable sealing flange is arranged between the cylinder mounting flange and the cavity welding flange; the movable sealing flange is characterized in that a movable sealing flange end cover is arranged in the movable sealing flange, at least two sealing rings are arranged in the movable sealing flange end cover, and the sealing rings are compressed through sealing ring compression rings.

10. The apparatus as claimed in claim 6, wherein the electrode holder comprises an electrode holder and an electrode driving cylinder, the electrode holder is provided with an electrode post and a sliding sealing structure of the electrode post, the electrode post can penetrate through the upper surface of the vacuum furnace chamber and extend into the vacuum furnace chamber, when the electrode assembly structure in the furnace is moved to the coating station, the electrode post can move downwards along the sliding structure under the driving of the electrode driving cylinder and respectively touch the positive electrode block and the negative electrode block of the electrode assembly in the vacuum furnace chamber.