CN211979245U - Planar funnel microcavity for realizing deep sub-wavelength photon mode volume of epitaxial material - Google Patents
Planar funnel microcavity for realizing deep sub-wavelength photon mode volume of epitaxial material Download PDFInfo
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- CN211979245U CN211979245U CN202020223008.5U CN202020223008U CN211979245U CN 211979245 U CN211979245 U CN 211979245U CN 202020223008 U CN202020223008 U CN 202020223008U CN 211979245 U CN211979245 U CN 211979245U
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Abstract
The patent discloses a realize plane funnel microcavity of epitaxial material dark subwavelength photon mode volume, its structure includes metal reflection thin layer, epitaxial material layer, plane infundibulate antenna layer. Under the incidence of planar light, plasmon modes on the surfaces of two layers of metal are coupled together to form a plasmon waveguide mode, the plasmon waveguide mode is propagated in an epitaxial material layer between upper metal and lower metal, and a deep sub-wavelength scale local strong optical field is formed in the epitaxial material below a tip based on a microcavity resonance mode and a metal tip effect. The perfect integration of the epitaxial material and the plane funnel-shaped plasmon micro-cavity can be realized by utilizing the substrate removing technology of the epitaxial material, a physical reflection interface is formed through etching, the system approaches a critical coupling state, and the photon mode coupling efficiency can be greatly localized. The microcavity structure is beneficial to realizing a deep sub-wavelength scale local photon mode and a local strong optical field.
Description
Technical Field
The patent relates to deep sub-wavelength photon mode volume, in particular to a plane funnel-shaped plasmon micro-cavity for realizing deep sub-wavelength photon mode volume in an epitaxial material.
Background
At present, the information technology is rapidly developed, and the application requirements of photonic devices in the aspects of information transmission, processing and storage are more and more important. However, due to the limitation of the preparation process level, the size of the photonic device is difficult to exceed the diffraction limit, and with the maturity of the micro-nano scale processing technology, the spatial scale of the photonic device is also continuously reduced, which has entered the era of micron scale and even nano scale. The surface plasmon is one of the main research directions for realizing the sub-wavelength scale photonic devices at present, can break through the optical diffraction limit, and realizes the transmission and regulation of light under the sub-wavelength scale. The nanometer photon device based on surface plasmon utilizes the excitation of surface plasmon in a conductor to compress the size of the photon device to deep subwavelength or even nanometer level. Based on novel optical characteristics of surface plasmons, a plurality of novel sub-wavelength functional photonic devices are provided, and the devices show great application potential in a plurality of fields such as all-optical integrated chips, biochemical sensing, solar photovoltaic synergy and surface enhanced spectroscopy. Therefore, the novel plasmon micro-cavity for realizing the deep sub-wavelength photon mode volume has important scientific significance and application value.
The surface plasmon is a coupling excitation mode of collective oscillation of electromagnetic waves and free electrons existing at a metal-medium interface, an electromagnetic field is limited in a small range of the metal surface and is enhanced by multiple times, the optical diffraction limit is broken through, the electromagnetic field can propagate along the metal-medium interface, and the electromagnetic field is exponentially attenuated to two sides perpendicular to the interface. The plane funnel-shaped plasmon micro-cavity structure is formed by an antenna layer, a medium epitaxial material layer and a reflecting surface of a metal reflector, an F-P resonance waveguide mode is formed, a light field is limited at the top of the funnel structure by using a tip effect, and the limitation and the local field enhancement of the light in a deep sub-wavelength photon mode volume are realized.
To achieve strong coupling of light and substance, the photon mode volume and the degree of coincidence of the oscillator and the local optical field are two key factors. The coupling strength is inversely proportional to the square root of the photon mode volume and proportional to the number of elements in the local optical field coverage area, and the reduction of the mode volume and the increase of the element strength are direct conditions for achieving strong coupling. Therefore, the plane funnel-shaped plasmon micro-cavity can generate a local photon mode with a deep sub-wavelength photon mode volume in the epitaxial material between the upper metal interface and the lower metal interface, and can promote the epitaxial material and light to form a strong coupling state. The planar funnel-shaped plasmon micro-cavity structure with deep sub-wavelength photon mode volume capable of breaking through optical diffraction limit can realize matching integration with nanoscale electronic devices, and is a development direction of current optical research.
Disclosure of Invention
The purpose of this patent is to provide a plane infundibulate plasmon micro-cavity design that realizes dark subwavelength photon mode volume, has solved traditional optical device diffraction limit problem. The plasmon micro-cavity structure not only realizes deep sub-wavelength size, but also realizes light limitation and local field enhancement by utilizing the tip effect.
The structure of the plane funnel micro-cavity is as follows: an epitaxial material layer 2 and a plane funnel-shaped antenna layer 3 are sequentially arranged on the metal reflecting film 1;
the metal reflection film 1 is a complete metal gold reflection layer, a metal silver reflection layer, a metal aluminum reflection layer or an alloy reflection layer of gold, silver and aluminum; the thickness of the metal is not less than twice of the skin depth of the electromagnetic waves in the metal; the period size is one quarter to one half of the detection wavelength.
The epitaxial material layer 2 is two to five heterogeneous material layers, the thickness of the epitaxial material layer is less than one fifth of the detection wavelength, the heterogeneous material layer is a GaAs, GaN and SiC semiconductor material layer, or a GaAs/AlGaAs, InGaAs/InAlAs/InP, InGaAs/GaAs single-layer or multi-layer quantum well layer, or a GaAs/AlAs superlattice, InAs/GaSb superlattice material layer, or a GaAs, InAs, InP and CdSe self-organized growth quantum dot material layer;
the plane funnel-shaped antenna layer (3) is a high-conductivity material antenna layer, the high-conductivity material antenna layer is a gold, silver, aluminum, copper or alloy material antenna layer, and the thickness of the plane funnel-shaped antenna layer is not less than twice of the skin depth of electromagnetic waves in metal. The transverse maximum dimension of the planar funnel is within a wavelength range; the longitudinal maximum dimension is in a wavelength range, in this case about one fifth of the wavelength in the transverse dimension and about one sixth of the wavelength in the longitudinal dimension. By the dimensions a, b, c, L1、L2The structure can be determined. a is a narrow funnel mouth, b is a funnel neck, c is a wide funnel bottom, L1Is the size from the funnel mouth to the funnel neck, L2The dimension from the neck of the funnel to the bottom of the funnel. The ratio of the width at the mouth of the funnel to the width at the bottom of the funnel is about 1:4, i.e. a: c is 1: 4; the width of the neck of the funnel is slightly narrower than that of the opening of the funnel, and the ratio of the neck to the opening of the funnel is about 3:4, namely b: a is 3: 4; the upper and lower proportion of the funnel shape taking the neck as a boundary line is 3:5, namely L1:L23: 5. The structure canThe tip effect is realized, and a strong local light field is arranged at the top of the funnel.
The epitaxial material grows on a substrate matched with the crystal lattice of the epitaxial material, then the substrate with the thickness of hundreds of microns is removed by utilizing a substrate removing technology, a plane funnel-shaped antenna and a metal reflecting film are respectively prepared on the upper side and the lower side of the epitaxial material layer, a plane funnel-shaped plasmon micro-cavity is obtained, and the epitaxial material forms a deep sub-wavelength scale local photon mode. A physical reflection interface is formed through etching, so that the system approaches a critical coupling state, and the coupling efficiency of the deep sub-wavelength scale local photon mode is improved. In this case, absorption by etching the epitaxial layer reaches 20% and the cube root of the mode volume is about one quarter of the probe wavelength. In the structure, a plasmon micro-cavity is formed by the metal antenna layer, the epitaxial material layer and the metal reflecting film layer, the resonance mode of the plasmon micro-cavity is matched with the tip effect of the funnel-shaped antenna, and a high-intensity deep sub-wavelength scale local optical field is formed in the epitaxial material below the tip of the funnel. The integration of the epitaxial material with the upper and lower metal layers can be realized by utilizing the substrate removing technology of the epitaxial material, and the planar funnel antenna is of a two-dimensional planar structure, so that the planar funnel antenna is convenient to prepare.
The advantages of this patent are as follows:
1 in the structure, a plane funnel antenna layer, an epitaxial material layer and a metal reflection film layer form a plasmon micro-cavity shape, and a local strong optical field with deep sub-wavelength scale is formed in the epitaxial material below a tip due to micro-cavity resonance and the tip effect of the plane funnel antenna.
2, the perfect integration of the epitaxial material and the plane funnel-shaped plasmon micro-cavity can be realized by utilizing the substrate removing technology of the epitaxial material, so that a deep sub-wavelength scale local photon mode can be formed on the epitaxial material.
And 3, forming a plasmon micro-cavity fault through etching to form a physical reflection interface, regulating and controlling the radiation loss Q value of the physical reflection interface, enabling the system to approach a critical coupling state, greatly improving the coupling efficiency of the deep sub-wavelength scale local photon mode, and improving the intensity of a local light field. The performance of the device is insensitive to the etching process and has higher tolerance.
Drawings
Fig. 1 is a schematic structural view of a planar funnel-shaped plasmon microcavity.
Fig. 2 is a top view of a planar funnel-shaped plasmonic microcavity.
Fig. 3 is a dielectric function of the quantum well in the z direction in the embodiment of the patent, and a dashed line represents an imaginary part corresponding to a left coordinate axis, and a solid line represents a real part corresponding to a right coordinate axis.
Fig. 4 is an absorption spectrum of the novel plasmonic microcavity structure obtained in the examples of this patent.
Fig. 5 is a mode volume diagram of a novel plasmonic microcavity structure obtained in an example of the present patent.
Detailed Description
1 the design and preparation method of the plane funnel-shaped plasmon micro-cavity provided by the patent is completely compatible with the QWIP focal plane array process. For ease of illustration, GaAs/Al will be used hereinafter to operate at 10.55 μmXGa1-XThe specific implementation mode of the patent is described in detail by taking a plane funnel-shaped plasmon micro-cavity of an As quantum well As an example and combining the attached drawings:
2 first, a lower electrode layer (GaAs heavily doped with silicon, doping concentration: 2X 10) is grown on a GaAs substrate by molecular beam epitaxy17cm-3)、GaAs/AlXGa1-XAs quantum well material, upper electrode layer (heavily doped GaAs of silicon, doping concentration: 2X 10)17cm-3)。
3, defining the mesa of the quantum well infrared detection device by using a photoetching method, etching the developed area of the photoresist, and protecting the undeveloped area of the photoresist.
And 4, etching the quantum well material sample to the lower electrode by using chemical etching or Inductively Coupled Plasma (ICP) to form a common electrode and form a table top at the same time.
And 5, defining a pattern by photoetching, using photoresist as a mask, adopting an electron beam evaporation method to precipitate AuGe/Ni/Au, and stripping to obtain the metal contact layers of the upper electrode and the lower electrode. And eliminating the Schottky barrier between the AuGe/Ni/Au and the semiconductor material through a rapid annealing process to form ohmic contact.
6 depositing a Ti (50nm)/Au (150nm) metal layer as a bottom metal reflective layer by electron beam evaporation.
And 7, growing a 300nm SiNx film on the surface of the chip by PECVD (plasma enhanced chemical vapor deposition) to serve as a passivation layer, wherein the SiNx film is mainly used for isolating air and water vapor, shielding surface electric leakage and protecting the chip.
And 8, defining a window by photoetching, etching the SiNx film by using a Reactive Ion Etching (RIE) method, and forming a hole in the passivation layer so that the chip can be interconnected with the indium column on the electrode on the gem.
9 by photolithography, thermal evaporation and stripping, indium columns of about 7m were prepared at the openings.
10 interconnect the device to circuitry on the gemstone by flip chip bonding.
And 11, injecting a proper amount of epoxy glue into the gap between the chip and the gem piece through a glue dispenser, and curing the epoxy glue to protect the internal structure of the device and the influence caused by the mismatch of the thermal expansion coefficients in the buffer device.
12, removing the GaAs substrate by mechanical grinding and selective etching.
13 preparing a planar funnel-shaped metal reflective structure by electron beam lithography.
Examples
The resonance wavelength of the novel plasmon micro-cavity structure is 10.55 microns, gold is adopted as metal, and gallium arsenide heavily doped with silicon is adopted as the material of the upper electrode layer and the lower electrode layer. The structural size of the periodic unit is obtained through electromagnetic simulation optimization and is as follows: px 2.4 μm, Py 2.4 μm, a 0.56 μm, b 0.42 μm, c 2.24 μm, L1＝0.63μm， L2＝1.05μm，h1100 nm. The epitaxial material layer 2 has a total thickness of 505nm, comprises a 200nm upper electrode layer and a 200nm lower electrode layer, and a composite single quantum well structure of 105nm gallium arsenide and aluminum gallium arsenide, comprises a 50nm AlXGa1-XAs barrier layer and a 5nm GaAs potential well layer, and has an absorption peak value of 10.55 mu m. The material of the plane funnel-shaped antenna layer (3) is completely the same as that of the metal reflector (1), and the thickness is h3The specific parameters of the planar funnel are as shown in fig. 2, the vertical height of the funnel is 1.68 μm, and the neck of the funnel-shaped metal antenna is used as the neckThe upper and lower proportion of the boundary is 3:5, the width a of the opening of the funnel is 0.56 μm, the width b of the neck of the funnel is 0.42 μm, and the width c of the bottom of the funnel is 2.24 μm. A metal bridge can be added at the bottom of the funnel, so that the device integration is facilitated, and the influence on the result of the mode volume calculation is small.
Claims (1)
1. A planar funnel microcavity for realizing deep sub-wavelength photon mode volume of epitaxial materials is characterized in that:
the structure of the plane funnel micro-cavity is as follows: an epitaxial material layer (2) and a plane funnel-shaped antenna layer (3) are sequentially arranged on the metal reflecting film (1);
the metal reflecting film (1) is a complete metal gold reflecting layer, a metal silver reflecting layer and a metal aluminum reflecting layer or an alloy reflecting layer of gold, silver and aluminum; the thickness of the metal is not less than twice of the skin depth of the electromagnetic waves in the metal;
the epitaxial material layer (2) is two to five heterogeneous material layers, the thickness of the epitaxial material layer is less than one fifth of the detection wavelength, the heterogeneous material layers are GaAs, GaN and SiC semiconductor material layers, or GaAs/AlGaAs, InGaAs/InAlAs/InP, InGaAs/GaAs single-layer or multi-layer quantum well layers, or GaAs/AlAs superlattice, InAs/GaSb superlattice material layers, or GaAs, InAs, InP and CdSe self-organized growth quantum dot material layers;
the plane funnel-shaped antenna layer (3) is a high-conductivity material antenna layer, the high-conductivity material antenna layer is a gold, silver, aluminum, copper or alloy material antenna layer, and the thickness of the plane funnel-shaped antenna layer is not less than twice of the skin depth of electromagnetic waves in metal.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111190245A (en) * | 2020-02-28 | 2020-05-22 | 中国科学院上海技术物理研究所 | Planar funnel microcavity for realizing deep sub-wavelength photon mode volume of epitaxial material |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111190245A (en) * | 2020-02-28 | 2020-05-22 | 中国科学院上海技术物理研究所 | Planar funnel microcavity for realizing deep sub-wavelength photon mode volume of epitaxial material |
| CN111190245B (en) * | 2020-02-28 | 2023-07-04 | 中国科学院上海技术物理研究所 | Planar funnel microcavity for realizing deep sub-wavelength photon mode volume of epitaxial material |
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