CN113517357A - Molybdenum disulfide photoelectric detector and preparation method thereof - Google Patents
Molybdenum disulfide photoelectric detector and preparation method thereof Download PDFInfo
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- 229910052982 molybdenum disulfide Inorganic materials 0.000 title claims abstract description 96
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 title claims abstract description 94
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
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- 239000000377 silicon dioxide Substances 0.000 claims description 7
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- 229910052710 silicon Inorganic materials 0.000 description 6
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- 238000001514 detection method Methods 0.000 description 5
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Abstract
The invention provides a molybdenum disulfide photoelectric detector and a preparation method thereof, wherein the molybdenum disulfide photoelectric detector comprises a metal reflecting layer, an insulating medium layer, a molybdenum disulfide layer, a source electrode and a drain electrode which are arranged on the molybdenum disulfide layer at intervals, wherein the metal reflecting layer, the insulating medium layer and the molybdenum disulfide layer are arranged from bottom to top, and the drain electrode comprises an electrode part and a grating part. The molybdenum disulfide photoelectric detector adopts the metal emission layer as the bottom layer, and the grating is integrated on the drain electrode, so that the two ends of the drain electrode and the source electrode of the photoelectric detector can form obvious light absorption difference, the symmetry of the light current at the two ends of the drain electrode and the source electrode is broken, and the light response of the photoelectric detector is enhanced.
Description
Technical Field
The invention relates to the technical field of semiconductor sensors, in particular to a molybdenum disulfide photoelectric detector and a preparation method thereof.
Background
Semiconductor photoelectric detectors have been maturely applied to a wide range of fields and become one of core device categories of modern industry and science, and currently, novel two-dimensional semiconductor materials are continuously explored and developed and gradually become the key point of research of leading-edge photoelectric detection technology because the special physical and chemical properties of the semiconductor materials, compared with the traditional semiconductor materials, can meet the high-performance requirements of photoelectric detection in various complex scenes in the practical application level. The few-layer molybdenum disulfide has the characteristics of adjustable band gap width, atomic-level thickness, smooth surface without dangling bonds and the like, and shows excellent performance in electricity and optics.
The two-dimensional semiconductor material has low direct light absorption efficiency due to the nanoscale ultrathin thickness, is integrated with an optical structure to change the electrical excitation mode of the two-dimensional semiconductor material, can obviously improve the optical coupling efficiency, and forms a new photoelectric detection technology with more comprehensive performance and wider application scenes. Plasmon energization is one of the main research directions for realizing two-dimensional material-optical structure recombination at present, and surface plasmon is a surface electromagnetic mode formed by resonance of free electrons and incident electromagnetic waves on a metal surface, and can be subdivided into two types: surface plasmon polaritons and localized surface plasmons. Wherein the surface plasmon polariton is a result of coupling of a plasmon of the metal surface with an incident electromagnetic field, and is an electromagnetic wave propagating on the metal-dielectric interface. Because the wavelength of the plasmon surface wave is far smaller than that of light with the same frequency in free space, the plasmon mode can generate a strong optical field with deep sub-wavelength scale, thereby greatly improving the optical absorption and optical response of low-temperature detection materials, such as two-dimensional materials.
In the conventional photoelectric detector, the source electrode and the drain electrode are approximately same in shape and are basically symmetrically arranged on the photoelectric detector, so that a remarkable difference is difficult to form between the light absorption of the area near the source electrode and the light absorption of the area near the drain electrode of the photoelectric detector, and the light response efficiency of the conventional photoelectric detector is low.
Disclosure of Invention
The invention provides a molybdenum disulfide photoelectric detector and a preparation method thereof, and aims to solve the technical problem of low photoresponse efficiency of the photoelectric detector in the prior art.
The invention provides a molybdenum disulfide photoelectric detector, which comprises a metal reflecting layer, an insulating medium layer, a molybdenum disulfide layer, a source electrode and a drain electrode, wherein the metal reflecting layer, the insulating medium layer and the molybdenum disulfide layer are arranged from bottom to top, the source electrode and the drain electrode are arranged on the molybdenum disulfide layer at intervals, and the drain electrode comprises an electrode part and a grating part.
In an alternative embodiment of the first aspect of the present invention, the metal reflective layer, the source electrode and the drain electrode are all a titanium/silver stack.
In an alternative embodiment of the first aspect of the present invention, the insulating dielectric layer is a silicon dioxide layer.
In an alternative embodiment of the first aspect of the present invention, the molybdenum disulfide layer is a single molybdenum disulfide layer.
In an optional embodiment of the first aspect of the present invention, the thickness of the source electrode is greater than or equal to 2 times the skin depth of the electromagnetic wave in the source electrode.
In an alternative embodiment of the first aspect of the present invention, the thickness of the drain electrode is greater than or equal to 2 times the skin depth of the electromagnetic wave in the drain electrode.
In an optional embodiment of the first aspect of the present invention, a thickness of the metal reflective layer is greater than or equal to 2 times a skin depth of the electromagnetic wave in the metal reflective layer.
In an alternative embodiment of the first aspect of the present invention, the grating portion side of the drain electrode faces the source electrode.
In an optional implementation manner of the first aspect of the present invention, the grating portion includes a plurality of bars arranged at intervals, and a length direction of the bars is perpendicular to both a side edge of the source electrode and a side edge of the electrode portion.
The invention provides a preparation method of a molybdenum disulfide photoelectric detector in a second aspect, which comprises the following steps:
providing a substrate;
depositing a metal reflecting layer, an insulating medium layer, a molybdenum disulfide layer and an electrode layer on the substrate in sequence;
and manufacturing electrode parts and a grating part of the source electrode and the drain electrode on the electrode layer through a mask.
Has the advantages that: the invention provides a molybdenum disulfide photoelectric detector and a preparation method thereof, wherein the molybdenum disulfide photoelectric detector comprises a metal reflecting layer, an insulating medium layer, a molybdenum disulfide layer, a source electrode and a drain electrode which are arranged on the molybdenum disulfide layer at intervals, wherein the metal reflecting layer, the insulating medium layer and the molybdenum disulfide layer are arranged from bottom to top, and the drain electrode comprises an electrode part and a grating part. The molybdenum disulfide photoelectric detector adopts the metal emission layer as the bottom layer, and the grating is integrated on the drain electrode, so that the drain electrode and the source electrode of the photoelectric detector form obvious light absorption difference, the symmetry of the light current at the two ends is broken, and the photoresponse of the photoelectric detector is enhanced.
Drawings
Fig. 1 is a schematic structural diagram of a molybdenum disulfide photodetector according to the present invention.
FIG. 2 is a block flow diagram of a method of fabricating a molybdenum disulfide photodetector according to the present invention;
fig. 3 is a schematic structural diagram of a general coupling grating asymmetric integrated molybdenum disulfide photoelectric device (comparison group).
Fig. 4 is a schematic diagram of the light absorption rate obtained by irradiating laser spots on two positions of the area near the source (a in fig. 1) and the area near the grating (B in fig. 1) of the molybdenum disulfide photoelectric detector.
Fig. 5 is a response spectrum of both devices of fig. 1 and 3 under flood illumination.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the scope of protection of the present invention.
Referring to fig. 1, a molybdenum disulfide photodetector according to a first aspect of the present invention includes a metal reflective layer 10, an insulating medium layer 20, a molybdenum disulfide layer 30, and a source electrode 40 and a drain electrode 50 disposed on the molybdenum disulfide layer 20 at an interval, where the drain electrode 50 includes an electrode portion 60 and a grating portion 70.
The invention aims to provide a molybdenum disulfide photoelectric detector based on metamaterial optical antenna asymmetric integration and a design method for realizing self-driven wide-spectrum photoresponse enhancement, and the bottleneck problems that a classic metal-molybdenum disulfide-metal photoelectric detector has no clean self-driven photoresponse under floodlight irradiation and the molybdenum disulfide light absorptivity is low are solved.
Specifically, the drain electrode of the grating, the molybdenum disulfide layer and the metal reflecting layer are integrated to form the metamaterial optical antenna, the metamaterial optical antenna is integrated on an electrode at one end, and a local strong optical field is formed at a junction area where the electrode is contacted with the molybdenum disulfide by utilizing the resonance of a plasmon mode, so that the light absorption efficiency of the junction area is obviously improved; meanwhile, the light absorption of the junction area between the electrode at the other end without the metamaterial optical antenna and the molybdenum disulfide is inhibited by the bottom metal, the symmetry of the magnitude of photocurrent in the opposite directions of the two-end electrode-molybdenum disulfide junction area is broken, and the obvious net value self-driven photoresponse enhancement is realized.
In an alternative embodiment of the first aspect of the present invention, the metal reflective layer, the source electrode and the drain electrode are all a titanium/silver stack. In the present embodiment, titanium/silver is a highly conductive metal, and the metal reflective layer, the source electrode, and the drain electrode in the present invention are a titanium/silver stack, which has excellent conductivity and electromagnetic compatibility.
In an alternative embodiment of the first aspect of the present invention, the insulating dielectric layer is a silicon dioxide layer. In this embodiment, the insulating dielectric layer is a transparent medium with a working wavelength band, including but not limited to silicon dioxide, and the thickness thereof is selected according to the actual device performance requirements.
In an alternative embodiment of the first aspect of the present invention, the molybdenum disulfide layer is a single molybdenum disulfide layer. In the embodiment, molybdenum disulfide is one of the most representative emerging two-dimensional layered materials, and layers of the molybdenum disulfide are combined by weak van der waals force, so that the molybdenum disulfide can be peeled into a two-dimensional layered nano material, the physical properties of the two-dimensional layered nano material have obvious thickness dependence, the two-dimensional layered nano material is transited from an indirect band gap to a direct band gap along with the reduction of the number of atomic layers, photoluminescence and photoelectric conversion efficiency are enhanced correspondingly, the two-dimensional layered nano material has good application prospects in the fields of photoelectrons, energy storage, field effect transistors and the like, and the photoelectric conversion efficiency of a device can be enhanced to the maximum extent by adopting a single layer of molybdenum disulfide.
In an optional embodiment of the first aspect of the present invention, the thickness of the source electrode is greater than or equal to 2 times the skin depth of the electromagnetic wave in the source electrode. In this embodiment, the electrode performance of the source electrode is better under the thickness condition.
In an alternative embodiment of the first aspect of the present invention, the thickness of the drain electrode is greater than or equal to 2 times the skin depth of the electromagnetic wave in the drain electrode. In this embodiment, the electrode performance of the drain electrode is better under this thickness condition.
In an optional embodiment of the first aspect of the present invention, a thickness of the metal reflective layer is greater than or equal to 2 times a skin depth of the electromagnetic wave in the metal reflective layer. In this embodiment, the metal reflective layer has a better electromagnetic wave reflection capability.
Referring to fig. 1, in an alternative embodiment of the first aspect of the present invention, the grating portion side of the drain electrode faces the source electrode. In this embodiment, the electrode portions of the source electrode and the drain electrode have the same shape and size, the grating portion is formed by extending the electrode portion of the drain electrode inward, the grating portion can improve the light absorption rate of the drain electrode region, and the light absorption rate of the source electrode region is lower than that of the drain electrode region because the grating portion does not exist in the source electrode region and the bottom of the device is the metal reflective layer, thereby forming a significant light absorption difference.
Referring to fig. 1, in an alternative embodiment of the first aspect of the present invention, the grating portion includes a plurality of bars arranged at intervals, and a length direction of the bars is perpendicular to both a side edge of the source electrode and a side edge of the electrode portion. In this embodiment, the bars may be equally spaced or unequally spaced, and the length direction of the bars may not be perpendicular to the side of the source electrode and the side of the electrode portion.
Referring to fig. 2, a second aspect of the present invention provides a method for preparing a molybdenum disulfide photodetector, including:
s100, providing a substrate;
s200, sequentially depositing a metal reflecting layer, an insulating medium layer, a molybdenum disulfide layer and an electrode layer on the substrate;
and S300, manufacturing electrode parts and grating parts of the source electrode and the drain electrode on the electrode layer through a mask.
The molybdenum disulfide photoelectric detector is integrated with molybdenum disulfide through a metamaterial optical antenna, and realizes field enhancement of a local tangential photon mode (an electric field is mainly parallel to a two-dimensional plane of molybdenum disulfide) by utilizing plasmon resonance. The equivalent absorption coefficient is improved based on the matching of the tangential photon mode and the light absorption direction of the molybdenum disulfide, the absorption Q value is reduced, the radiation Q value of the metamaterial optical antenna is regulated and controlled by adjusting parameters such as the period of a metal bar grid, the thickness of a dielectric layer and the like, a system is enabled to approach a critical coupling state, incident electromagnetic waves are efficiently converted into a strong optical field which is locally near the molybdenum disulfide, the sufficient interaction of light and the molybdenum disulfide is realized, and the light absorption and the light response of the molybdenum disulfide are improved. The metamaterial optical antenna is fused with an electrode at one end, the light absorption of the electrode-molybdenum disulfide contact junction area is remarkably enhanced by utilizing efficient coupling and light field local area, and meanwhile, the light-sensitive area is increased by prolonging the boundary of the contact junction, so that the incident light receiving efficiency is improved; and in the contact junction area of the other electrode and the molybdenum disulfide, the metal bottom surface with a close distance is utilized to greatly inhibit light absorption, so that the great difference of the light absorption of the two electrodes and the molybdenum disulfide contactor is realized, and the low-power-consumption molybdenum disulfide photoelectric detector with obvious wide-spectrum response enhancement is constructed.
Example 1
The specific structure of the molybdenum disulfide photoelectric detector is as follows:
the structure of the molybdenum disulfide photoelectric detector comprises: the device comprises a source electrode, a drain electrode integrated with a grating, a single-layer molybdenum disulfide layer, an insulating medium layer and a metal reflecting layer. Referring to fig. 1, the source electrode and the drain electrode integrated with the grating are formed with a thickness of h3Of high conductivity metal of (a) thickness h3Not less than 2 times of the skin depth of the electromagnetic wave in the metal, passing through the period P of the grid bars, the line width W of the grid bars and the length L of the grid bars1And channel length L2The structure of the source and drain electrodes, e.g. L, can be determined1Is equal to L2P is one tenth to one twentieth of the wavelength of light, W is three quarters of P, and the insulating medium layer is a layer with the thickness of h2The working band of (1) is transparent, in particular silicon dioxide, with a thickness of h2The metal reflective layer has a thickness of h1Complete metal reflective layer of h1Not less than 2 times of the skin depth of the electromagnetic wave in the metal.
More specifically, taking a molybdenum disulfide detector designed for a wavelength of 710nm as an example, a source electrode and a drain electrode integrated with a grating both adopt titanium (Ti)/silver (Ag) laminated layers, and the structural size of a periodic unit optimized by design is as follows: p41 nm, W31 nm, L1＝5μm，L2＝10μm，h1＝110nm，h2＝26nm，h320 nm. The source electrode and the drain electrode integrated with the grating adopt Ti (5nm)/Ag (15nm), the single-layer molybdenum disulfide is wet-transferred molybdenum disulfide grown by CVD, the insulating medium layer adopts silicon dioxide with designed thickness and transparent to the working waveband as the medium layer, and the metal reflecting layer adopts Ti (10nm)/Ag (100 nm).
In order to verify the performance of the device, a comparison group is designed, referring to fig. 3, the size of the periodic structure of the top grating of the general coupling grating asymmetric integrated molybdenum disulfide device as the comparison group is the same as that of the molybdenum disulfide detector asymmetrically integrated with the metamaterial optical antenna, but the bottom layer of the molybdenum disulfide device is 500 μm thick silicon, and the insulating medium layer is 300nm silicon dioxide.
The molybdenum disulfide photoelectric detector has the following advantages:
1. according to the molybdenum disulfide device structure, the metamaterial optical antenna is integrated with an electrode at one end (the metamaterial optical antenna is formed by integrating the drain electrode with the grating, the single-layer molybdenum disulfide layer, the insulating medium layer and the metal reflecting layer), referring to fig. 4, the light absorption of a contact junction area of the electrode and molybdenum disulfide is greatly enhanced based on the efficient coupling and the light field local area of the metamaterial optical antenna, the photosensitive area is increased by prolonging the boundary of the contact junction, the distance between the molybdenum disulfide at the electrode without the metal grating integration at the other end and a bottom metal plane is short, the light field is inhibited, and the light absorption is weakened. Finally, the contrast of light absorption of the two electrodes in contact with the molybdenum disulfide junctions reaches about 10.3 times in the wavelength range from 400 to 800 nm and up to 113 times around 710nm, and the metal-molybdenum disulfide-metal photodetector achieves a net self-driven light absorption under flood illumination.
2. Referring to fig. 5, compared with the conventional metal grating integrated molybdenum disulfide detector for enhancing light absorption, the light absorption rate of the integrated molybdenum disulfide detector using the metamaterial optical antenna is improved by more than 2 times.
3. The optical structure of the detector and molybdenum disulfide are integrated on the same plane, the process compatibility is strong, the integration is convenient, the process flow is simple, and the self-driven optical detection mode corresponds to lower device dark current.
Example 2
The specific preparation method of the molybdenum disulfide photoelectric detector comprises the following steps:
1. firstly, ultrasonically cleaning a silicon wafer substrate by using acetone, then washing the surface of the silicon wafer by using isopropanol to remove redundant acetone, then washing the silicon wafer by using deionized water, and blow-drying to ensure that the surface of the silicon wafer substrate is clean and pollution-free.
2. Depositing a Ti (10nm)/Ag (100nm) metal layer as a bottom metal reflecting layer on a clean silicon wafer substrate by using an electron beam evaporation method.
3. And depositing a layer of insulating medium which is transparent to the working waveband and has a specific thickness on the bottom metal reflecting layer by utilizing Plasma Enhanced Atomic Layer Deposition (PEALD).
4. And transferring the single-layer molybdenum disulfide to the surface of the insulating medium layer by using a mechanical stripping method.
5. And defining a pattern by using electron beam lithography, protecting the bottom layer molybdenum disulfide by using electron beam photoresist as a mask, bombarding a sample by using oxygen plasma, and bombarding to remove the molybdenum disulfide which is not protected by the photoresist, thereby realizing molybdenum disulfide patterning treatment.
6. And defining a pattern by electron beam lithography, using photoresist as a mask, depositing Ti/Ag by an electron beam evaporation method, and finally obtaining a source electrode, a drain electrode and a grating by stripping.
Claims (10)
1. A molybdenum disulfide photoelectric detector is characterized by comprising a metal reflecting layer, an insulating medium layer, a molybdenum disulfide layer, a source electrode and a drain electrode, wherein the metal reflecting layer, the insulating medium layer and the molybdenum disulfide layer are arranged from bottom to top, the source electrode and the drain electrode are arranged on the molybdenum disulfide layer at intervals, and the drain electrode comprises an electrode part and a grating part.
2. The molybdenum disulfide photodetector of claim 1, wherein the metal reflective layer, the source electrode, and the drain electrode are all a titanium/silver stack.
3. The molybdenum disulfide photodetector of claim 1, wherein the insulating dielectric layer is a silicon dioxide layer.
4. The molybdenum disulfide photodetector of claim 1, wherein the molybdenum disulfide layer is a single layer of molybdenum disulfide.
5. The molybdenum disulfide photodetector of claim 1, wherein the thickness of the source electrode is greater than or equal to 2 times the skin depth of the electromagnetic waves in the source electrode.
6. The molybdenum disulfide photodetector of claim 1, wherein the thickness of the drain electrode is greater than or equal to 2 times the skin depth of the electromagnetic waves in the drain electrode.
7. The molybdenum disulfide photodetector of claim 1, wherein the thickness of the metal reflective layer is greater than or equal to 2 times the skin depth of the electromagnetic waves in the metal reflective layer.
8. The molybdenum disulfide photodetector of claim 1, wherein the grating portion side of the drain electrode faces the source electrode.
9. The molybdenum disulfide photodetector of claim 1, wherein the grating portion comprises a plurality of spaced bars, and the length direction of the bars is perpendicular to both the side edge of the source electrode and the side edge of the electrode portion.
10. A preparation method of a molybdenum disulfide photoelectric detector is characterized by comprising the following steps:
providing a substrate;
depositing a metal reflecting layer, an insulating medium layer, a molybdenum disulfide layer and an electrode layer on the substrate in sequence;
and manufacturing electrode parts and a grating part of the source electrode and the drain electrode on the electrode layer through a mask.
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