CN211700262U - 单片式半导体单相全波mb和db系列贴片整流桥堆 - Google Patents
单片式半导体单相全波mb和db系列贴片整流桥堆 Download PDFInfo
- Publication number
- CN211700262U CN211700262U CN202020605135.1U CN202020605135U CN211700262U CN 211700262 U CN211700262 U CN 211700262U CN 202020605135 U CN202020605135 U CN 202020605135U CN 211700262 U CN211700262 U CN 211700262U
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- phase full
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- connecting plate
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052802 copper Inorganic materials 0.000 claims abstract description 7
- 239000010949 copper Substances 0.000 claims abstract description 7
- 238000003466 welding Methods 0.000 abstract description 13
- 239000000463 material Substances 0.000 abstract description 9
- 238000002360 preparation method Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 238000001746 injection moulding Methods 0.000 description 2
- 208000004141 microcephaly Diseases 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- GVVPGTZRZFNKDS-JXMROGBWSA-N geranyl diphosphate Chemical group CC(C)=CCC\C(C)=C\CO[P@](O)(=O)OP(O)(O)=O GVVPGTZRZFNKDS-JXMROGBWSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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- Rectifiers (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202020605135.1U CN211700262U (zh) | 2020-04-21 | 2020-04-21 | 单片式半导体单相全波mb和db系列贴片整流桥堆 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202020605135.1U CN211700262U (zh) | 2020-04-21 | 2020-04-21 | 单片式半导体单相全波mb和db系列贴片整流桥堆 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN211700262U true CN211700262U (zh) | 2020-10-16 |
Family
ID=72781316
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN202020605135.1U Active CN211700262U (zh) | 2020-04-21 | 2020-04-21 | 单片式半导体单相全波mb和db系列贴片整流桥堆 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN211700262U (zh) |
-
2020
- 2020-04-21 CN CN202020605135.1U patent/CN211700262U/zh active Active
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240719 Address after: No. 37 Xingye Avenue North, High tech Zone, Heyuan City, Guangdong Province, 517000 (Building B1, B2) First, Second, and Fifth Floors Patentee after: Guangdong Haihong Electronic Technology Co.,Ltd. Country or region after: China Address before: 518101 29a, block D, Shihong garden, 63 Fanshen Road, Anle community, Xin'an street, Bao'an District, Shenzhen City, Guangdong Province Patentee before: Shenzhen Haihong Jianye Technology Co.,Ltd. Country or region before: China |