CN211656108U - IGCT's grid drive arrangement and electrical equipment - Google Patents
IGCT's grid drive arrangement and electrical equipment Download PDFInfo
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- CN211656108U CN211656108U CN202020407130.8U CN202020407130U CN211656108U CN 211656108 U CN211656108 U CN 211656108U CN 202020407130 U CN202020407130 U CN 202020407130U CN 211656108 U CN211656108 U CN 211656108U
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Abstract
The utility model discloses a IGCT's gate drive and electrical equipment, the device includes: the detection unit is used for detecting the gate pole current of the IGCT and generating an opening signal of the IGCT under the condition that the detected gate pole current of the IGCT reaches the set opening current of the IGCT; the control unit controls the IGCT to be switched on according to the switching-on signal of the IGCT; the detection unit is also used for generating an IGCT opening maintaining signal under the condition that the continuously detected IGCT gate pole current is smaller than the IGCT set opening maintaining current; and the control unit also adjusts the gate pole current of the IGCT according to the opening maintaining signal of the IGCT so as to maintain the IGCT to be continuously opened. According to the scheme, the problem that the IGCT is turned on and then turned off mistakenly if the gate current is smaller than the holding current can be solved, and the effect of avoiding the IGCT from being turned off mistakenly due to the fact that the gate current is smaller than the holding current after the IGCT is turned on is achieved.
Description
Technical Field
The utility model belongs to the technical field of the electronic circuit, concretely relates to IGCT's gate drive arrangement and electrical equipment especially relate to integrated gate pole commutation thyristor gate drive circuit and electrical equipment.
Background
In the use process of an Integrated Gate-Commutated Thyristor (IGCT), an external circuit injects current pulses with certain amplitude and a certain rising rate to a Gate pole to serve as driving current so as to trigger the Thyristor to be completely switched on. After the IGCT is completely switched on, due to positive feedback formed by the internal structure of the IGCT, the IGCT is maintained to be switched on only by a small maintaining current; however, IGCTs turn off by themselves if the gate current is less than the holding current, which is undesirable in engineering.
The above is only for the purpose of assisting understanding of the technical solutions of the present invention, and does not represent an admission that the above is the prior art.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to the above-mentioned defect, provide an IGCT's gate drive and electrical equipment to solve the IGCT and switch on the back if the gate pole electric current is less than the problem that holding current then can produce the mistake and turn-off, reach and avoid IGCT to switch on the back because the gate pole electric current is less than holding current and the effect that the mistake was turned off.
The utility model provides a IGCT's gate drive arrangement, include: a detection unit and a control unit; the detection unit is used for detecting the gate pole current of the IGCT under the condition that the IGCT is turned off and needs to be turned on; and generating an IGCT turn-on signal when the detected gate pole current of the IGCT reaches the set IGCT turn-on current; the control unit is used for controlling the IGCT to be switched on according to the switching-on signal of the IGCT; the detection unit is also used for continuously detecting the gate pole current of the IGCT under the condition that the IGCT is switched on; and generating an IGCT turn-on maintaining signal under the condition that the gate pole current of the IGCT which is continuously detected is smaller than the set turn-on maintaining current of the IGCT; and the control unit is also used for adjusting the gate pole current of the IGCT according to the opening maintaining signal of the IGCT so as to maintain the IGCT to be continuously opened.
Optionally, the detection unit comprises: sampling a resistor; and the sampling resistor is arranged between the power supply of the IGCT and the gate pole of the IGCT, and is used for reserving the current per se by detecting the current and taking the current flowing through per se as the gate pole current of the IGCT.
Optionally, a control unit comprising: the device comprises a controller, a switch module and a current maintaining module; the switch module is arranged between the gate pole of the IGCT and the first connection end of the power supply of the IGCT; the controller is used for controlling the switch module according to the opening signal of the IGCT so as to control the IGCT to be opened through the switch module; the current maintaining module is arranged between the cathode of the IGCT and the second connecting end of the power supply of the IGCT; and the controller is also used for controlling the current maintaining module according to the turn-on maintaining signal of the IGCT so as to adjust the gate current of the IGCT by adjusting the PWM duty ratio of the input current of the current maintaining module.
Optionally, the current maintenance module comprises: the first switch tube and the second switch tube; a switch module comprising: a third switching tube; the first switching tube is arranged between the second connecting end of the power supply of the IGCT and the gate pole of the IGCT; the second switching tube is arranged between the gate pole of the IGCT and the cathode of the IGCT; and the third switching tube is arranged between the gate pole of the IGCT and the first connection end of the power supply of the IGCT.
Optionally, the current maintenance module further comprises: the device comprises an energy storage module, a first discharging module and a second discharging module; the energy storage module is arranged between the first switching tube and the gate pole of the IGCT and used for storing energy by using the power supply under the condition that the first switching tube is switched on; the first discharging module is arranged between the first switching tube and the third switching tube; the second discharge module is arranged between the first switching tube and the second switching tube; the controller passes through the switch module control IGCT and switches on, includes: the controller controls the first switch tube to be disconnected, the third switch tube to be disconnected and controls the second switch tube to be closed, so that the energy storage element forms a conduction path of the IGCT in a discharging mode of the IGCT and the second discharging module; the controller adjusts the gate current of the IGCT by adjusting the PWM duty cycle of the input current to the current maintenance module, comprising: the controller controls the first switch tube to be switched on and controls the second switch tube to be switched off, so that the energy storage element supplements current for the gate pole of the IGCT in a discharging mode of the IGCT and the first discharging module.
Optionally, the switch module further includes: a back electromotive force module; and the back electromotive force module is arranged between the third switching tube and the cathode of the IGCT and is used for providing back electromotive force when the IGCT is switched off.
With the above device phase-match, the utility model discloses another aspect provides an electrical equipment, include: the gate driving device of IGCT described above.
The utility model discloses a scheme, through making the electric current that flows through the IGCT gate pole maintain near the on-state gate pole maintenance current all the time, for the thyristor provides on-state gate pole maintenance current and maintains switching on of IGCT, prevent that the mistake from turn-off from producing, promote IGCT's operational reliability.
Further, the utility model discloses a scheme, through adopting real-time current detection circuit, opening and turn-off of control switch pipe are stable in order to guarantee the holding current, can prevent that IGCT from appearing the turn-off problem by oneself in the use, avoid IGCT to appear the mistake in the use and turn-off, improve the reliability that IGCT used.
Further, the utility model discloses a scheme, through monitoring IGCT operating condition, real time control gate pole electric current, minimum gate pole maintenance current is applyed at the gate pole, can reduce energy loss.
Therefore, the utility model discloses a scheme is through the gate pole input current who detects IGCT to the size through adjusting gate pole input current maintains gate pole input current's stability, solves the IGCT and switches on the back if the gate pole current is less than holding current then can produce the problem that the mistake was turn-offed, reaches and provides dynamic gate pole holding current for IGCT and in order to maintain switching on of IGCT and avoid IGCT to switch on the back because the gate pole current is less than holding current and the effect that the mistake was turn-offed.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by the practice of the invention.
The technical solution of the present invention is further described in detail by the accompanying drawings and examples.
Drawings
Fig. 1 is a schematic structural diagram of an embodiment of an IGCT gate driving device according to the present invention;
FIG. 2 is a schematic diagram of an IGCT;
FIG. 3 is a schematic diagram of an embodiment of an IGCT driving circuit;
FIG. 4 is a schematic control flow diagram of an embodiment of an IGCT driving circuit;
fig. 5 is a schematic flowchart of an embodiment of a gate driving method of IGCT according to the present invention;
Detailed Description
To make the purpose, technical solution and advantages of the present invention clearer, the following will combine the embodiments of the present invention and the corresponding drawings to clearly and completely describe the technical solution of the present invention. It is to be understood that the embodiments described are only some embodiments of the invention, and not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
According to the embodiment of the utility model, a grid drive arrangement of IGCT is provided. Referring to fig. 1, a schematic structural diagram of an embodiment of the apparatus of the present invention is shown. The gate driving apparatus of the IGCT may include: a detection unit and a control unit.
Specifically, the detection unit may be configured to detect a gate current of the IGCT when the IGCT is turned off and needs to be turned on; and generating an IGCT turn-on signal when the detected gate current of the IGCT reaches the IGCT set turn-on current.
Specifically, the control unit may be configured to control the IGCT to be turned on according to an on signal of the IGCT.
Specifically, the detection unit may be further configured to continue to detect a gate current of the IGCT when the IGCT is turned on; and generating an IGCT turn-on maintaining signal under the condition that the gate current of the IGCT detected continuously is less than the set IGCT turn-on maintaining current. The set holding current for the IGCT is on, i.e., the set holding current for the case where the IGCT is on.
Optionally, the detection unit may include: the resistance is sampled.
And the sampling resistor is arranged between the power supply of the IGCT and the gate pole of the IGCT, and can be used for reserving the current per se by detecting the current and using the current flowing through per se as the gate pole current of the IGCT.
For example: in the three terminals G, A, K of the IGCT (integrated gate commutated thyristor), G is the thyristor gate, a is the thyristor anode, and K is the thyristor cathode. The current flowing into the gate can be monitored in real time by using resistance sampling. The gate electrode current detection circuit mainly detects the gate electrode current of the IGCT through a gate electrode driving resistor, compares the gate electrode current with the on-state gate electrode maintaining current through an operational amplifier and inputs an output signal into the FPGA.
Therefore, the gate electrode driving resistor of the IGCT is used as the sampling resistor to sample the gate electrode current of the IGCT, and the gate electrode current of the IGCT can be collected without additionally adding sampling equipment, so that the method is simple and convenient.
Specifically, the control unit may be further configured to adjust the gate current of the IGCT according to the turn-on maintaining signal of the IGCT to maintain the IGCT to continue to be turned on, that is, to control the gate current of the IGCT to increase to the set turn-on maintaining current or higher to maintain the IGCT to continue to be turned on.
For example: the gate drive circuit of the integrated gate commutated thyristor aims to provide an on-state gate maintaining current for the thyristor to maintain the on state of the IGCT, the gate current is enabled to be stable in a dynamic change mode through a control circuit, and the stable on state of a switch device can be guaranteed by providing the stable gate current, so that the error turn-off is prevented. Particularly, by adopting the real-time current detection circuit, the on-off of the switch tube is controlled to ensure the stability of the maintaining current, the problem of self-turn-off of the IGCT in the use process can be prevented, the error turn-off of the IGCT in the use process is avoided, and the reliability of the IGCT is improved. In addition, because the working state of the IGCT is monitored in real time and the gate current is controlled in real time, the minimum gate maintaining current applied to the gate can reduce energy loss, and thus, the energy loss caused by the continuous overhigh gate applying current of the IGCT can be avoided.
Therefore, when the IGCT is switched on, the gate current of the IGCT is adjusted to maintain the IGCT to be switched on continuously under the condition that the detected gate current of the IGCT is smaller than the set switching-on maintaining current of the IGCT, so that the error switching-off of the IGCT can be avoided, and the working reliability of the IGCT is improved.
Optionally, the control unit may include: the device comprises a controller, a switch module and a current maintaining module. For example: and the controller can be a programmable logic device FPGA.
Specifically, the switch module is arranged between the gate pole of the IGCT and the first connection end of the power supply of the IGCT. The first connection terminal of the power supply of the IGCT can be a power supply VDCThe cathode of (1).
Specifically, the controller may be configured to control the switch module according to a turn-on signal of the IGCT, so as to control the IGCT to be turned on through the switch module.
Specifically, the current maintaining module is arranged between the cathode of the IGCT and the second connecting end of the power supply of the IGCT. The second connection end of the power supply of the IGCT can be a power supply VDCOf (2) an anode.
Specifically, the controller may be further configured to control the current maintenance module according to the turn-on maintenance signal of the IGCT, so as to adjust the gate current of the IGCT by adjusting the PWM duty ratio of the input current of the current maintenance module, so as to maintain the IGCT to continue to turn on, i.e., control the gate current of the IGCT to increase to above the set turn-on maintenance current, so as to maintain the IGCT to continue to turn on.
For example: the on-off of the switch tube is controlled by adjusting the PWM duty ratio of the input switch tube, so that the purpose of adjusting the gate current is achieved, and finally the current flowing through the gate of the IGCT is always kept near the on-state gate maintenance current, thereby avoiding the error turn-off of the IGCT caused by the excessively low anode current.
Therefore, the switch of the IGCT is controlled through the switch module, the gate pole current of the IGCT is maintained through the current maintaining module so as to ensure that the IGCT is reliably switched on, and the use reliability of the IGCT is improved.
More optionally, the current maintaining module may include: a first switch tube and a second switch tube. A switch module, may include: and a third switching tube. For example: the first switch tube can be a MOS1 tube, and the second switch tube can be a MOS2 tube. The third switch tube can be a MOS3 tube. The MOSs 1 to 3 are first to third high-speed MOSFETs, and can be used for the purpose of turning on and off the circuit by receiving a control signal.
And the first switching tube is arranged between the second connecting end of the power supply of the IGCT and the gate pole of the IGCT. And the second switching tube is arranged between the gate pole of the IGCT and the cathode of the IGCT. For example: the maintaining current circuit controls the on and off states of the MOS1 tube and the MOS2 tube through the FPGA, and realizes that the current input to the gate is maintained near the steady-state gate maintaining current.
And the third switching tube is arranged between the gate pole of the IGCT and the first connection end of the power supply of the IGCT. For example: the turn-on and turn-off circuit is responsible for controlling turn-off of the IGCT by controlling turn-on of the MOS3 tube. When the MOS3 transistor is turned on, the IGCT gate potential is pulled to a negative potential by the capacitor C and the IGCT is turned off.
Therefore, the switch and the gate pole current of the IGCT are adjusted by the switch tube, so that the IGCT is reliably used, the structure is simple, and the control reliability is good.
Still further optionally, the current maintaining module may further include: the device comprises an energy storage module, a first discharging module and a second discharging module. For example: the energy storage module can be an inductor L. And L is an inductor which is used as an energy storage element to provide energy for the IGCT. The first discharging module may be a diode D1. And the second discharging module may be a diode D2.
Specifically, the energy storage module is arranged between the first switching tube and a gate pole of the IGCT, and can be used for storing energy by using the power supply under the condition that the first switching tube is switched on. For example: power supply VDCCharging inductor L, RLFor sampling the resistance, when a flow through the resistance R is detectedLWhen the current reaches the switching-on pulse current of the IGCT, the MOS1 tube and the MOS3 tube are disconnected, and the MOS2 tube is closed. Segment inductance L via resistance RLIGCT and diode D1Discharge, with the IGCT in a fully on state.
Specifically, the first discharge module is arranged between the first switching tube and the third switching tube. And the second discharge module is arranged between the first switching tube and the second switching tube.
Wherein, the controller passes through the on-off module control IGCT and opens, can include: the controller controls the first switch tube to be disconnected, the third switch tube to be disconnected and controls the second switch tube to be closed, so that the energy storage element forms a conduction path of the IGCT in a discharging mode of the IGCT and the second discharging module.
For example: power supply VDCCharging inductor L, RLFor sampling the resistance, when a flow through the resistance R is detectedLWhen the current reaches the switching-on pulse current of the IGCT, the MOS1 tube and the MOS3 tube are disconnected, and the MOS2 tube is closed. Inductor L via resistor RLIGCT and diode D1Discharge, with the IGCT in a fully on state.
Additionally, the controller adjusting the gate current of the IGCT by adjusting the PWM duty cycle of the input current to the current maintenance module may include: the controller controls the first switch tube to be switched on and controls the second switch tube to be switched off, so that the energy storage element supplements current for the gate pole of the IGCT in a discharging mode of the IGCT and the first discharging module.
For example: sampling resistor RLAre all collecting the current flowing through the resistor RLThe current data, the detection current and the holding current of the IGCT are compared, in order to avoid the error turn-off of the IGCT, when the detection circuit current is smaller than the holding current of the IGCT, a high level is closed for the MOS1 tube, a low level is opened for the MOS2 tube, and the power supply V at the stage isDCThe inductor L is charged, a reference current (larger than an IGCT maintaining current) is set, when the detection current is larger than the reference current, a signal is turned off for the MOS1 tube, the MOS2 tube is closed at a high level, and the inductor L discharges through the IGCT and the diode D again.
Therefore, the switching control and gate current maintenance of the IGCT are realized by matching the discharging module and the energy storage module with the switching tube, so that the IGCT can be reliably opened and used, and the reliability and convenience of the IGCT are improved.
Still further optionally, the switch module may further include: a back electromotive force module. For example: and the back electromotive force module can be a capacitor C. And C is a capacitor and provides back electromotive force for IGCT hard turn-off.
Specifically, the back electromotive force module is disposed between the third switching tube and the cathode of the IGCT, and can be used for providing back electromotive force when the IGCT is turned off.
For example: the IGCT is turned on in the initial stage, when the IGCT needs to be turned off, the control circuit gives a high level to the MOS3 tube, the MOS3 tube is closed to pull down the potential of the IGCT gate, and the IGCT gate bears a reverse voltage, namely the voltage at two ends of the capacitor C, so that the V is enabled to be in a state of being turned on2Cut off due to reverse bias of base, V1And finishing the turn-off of the anode current under the state that the base electrode is open-circuited, and enabling the IGCT to enter a cut-off state at the moment, thereby realizing the hard turn-off of the IGCT.
Therefore, the reliable turn-off of the IGCT can be realized by combining the switch tube with the counter electromotive force module, and the on-off control of the IGCT is more convenient.
Through a large amount of tests verification, adopt the technical scheme of the utility model, through making the electric current that flows through the IGCT gate pole maintain near the on-state gate pole maintenance current all the time, for the thyristor provides on-state gate pole maintenance current and maintains IGCT's switching on, prevent that the mistake from turn-off and producing, promote IGCT's operational reliability.
According to the utility model discloses an embodiment still provides an electrical equipment corresponding to IGCT's grid drive arrangement. The electric device may include: the gate driving device of IGCT described above.
The IGCT is used as a high-power semiconductor switch device, and has the characteristics of small switching loss, short switching time and the like, so that the IGCT is widely applied to the fields of high-power motor driving devices, direct current transmission, alternating current transmission and the like.
Fig. 2 is a schematic structural diagram of the IGCT. As shown in fig. 2, the IGCT can be regarded as two transistors V composed of PNP and NPN1And V2And (4) forming.
The utility model discloses a scheme provides an integrated gate pole commutation thyristor gate drive circuit, aims at providing switching on of on-state gate pole holding current maintenance IGCT for the thyristor, through control circuit, makes gate pole electric current dynamic change ground realize stably to through providing stable gate pole electric current, can guarantee switching device's stable open state, prevent that the mistake from turn-off and producing.
Specifically, the utility model discloses a scheme, through adopting real-time current detection circuit, opening and turn-off of control switch pipe are stable in order to guarantee the holding current, can prevent that IGCT from appearing the turn-off problem by oneself in the use, have avoided IGCT to appear the mistake in the use and have turned off, have improved its reliability. In addition, because the working state of the IGCT is monitored in real time and the gate current is controlled in real time, the minimum gate maintaining current applied to the gate can reduce energy loss, and thus, the energy loss caused by the continuous overhigh gate applying current of the IGCT can be avoided.
Wherein, the utility model discloses a scheme provides an integrated gate pole commutation thyristor gate drive circuit, utilizes the resistance sampling can the real-time supervision flow in the electric current of gate pole, through opening and turn-off of the PWM duty cycle control switch pipe of adjusting input switch pipe, reaches the purpose of adjusting the gate current, finally realizes that the electric current that flows through the IGCT gate pole maintains near the gate pole maintenance current of on-state all the time to avoid because the IGCT mistake that the positive pole electric current leads to the fact is turn-offed excessively.
Fig. 3 is a schematic structural diagram of an embodiment of an IGCT driving circuit.
In FIG. 3, VDCIs a direct current power supply. In the three terminals G, A, K of the IGCT (integrated gate commutated thyristor), G is the thyristor gate, a is the thyristor anode, and K is the thyristor cathode. The MOSs 1 to 3 are first to third high-speed MOSFETs, and can be used for the purpose of turning on and off the circuit by receiving a control signal. And L is an inductor which is used as an energy storage element to provide energy for the IGCT. RLIs a driving resistor. D1 and D2 are diodes. And C is a capacitor and provides back electromotive force for IGCT hard turn-off.
The gate driving circuit can take a programmable logic device FPGA as a core, and the turn-on and turn-off circuit is responsible for controlling the turn-on of the MOS3 tube to control the turn-off of the IGCT. When the MOS3 transistor is turned on, the IGCT gate potential is pulled to a negative potential by the capacitor C and the IGCT is turned off. The gate electrode current detection circuit mainly detects the gate electrode current of the IGCT through a gate electrode driving resistor, compares the gate electrode current with the on-state gate electrode maintaining current through an operational amplifier and inputs an output signal into the FPGA. The maintaining current circuit controls the on and off states of the MOS1 tube and the MOS2 tube through the FPGA, and realizes that the current input to the gate is maintained near the steady-state gate maintaining current.
Fig. 4 is a control flow diagram of an embodiment of the IGCT driving circuit.
As shown in fig. 4, the control procedure of the IGCT driving circuit can be seen in the following exemplary description.
The IGCT is turned on in the initial stage, when the IGCT needs to be turned off, the control circuit gives a high level to the MOS3 tube, the MOS3 tube is closed to pull down the potential of the IGCT gate, and the IGCT gate bears a reverse voltage, namely the voltage at two ends of the capacitor C, so that the V is enabled to be in a state of being turned on2Cut off due to reverse bias of base, V1And finishing the turn-off of the anode current under the state that the base electrode is open-circuited, and enabling the IGCT to enter a cut-off state at the moment, thereby realizing the hard turn-off of the IGCT.
Power supply V at this stageDCCharging inductor L, RLFor sampling the resistance, when a flow through the resistance R is detectedLWhen the current reaches the switching-on pulse current of the IGCT, the MOS1 tube and the MOS3 tube are disconnected, and the MOS2 tube is closed. The inductance L at this stage is connected via the resistance RLIGCT and diode D1Discharge, with the IGCT in a fully on state.
In the whole process, the resistor R is sampledLAre all collecting the current flowing through the resistor RLThe current data, the detection current and the holding current of the IGCT are compared, in order to avoid the error turn-off of the IGCT, when the detection circuit current is smaller than the holding current of the IGCT, a high level is closed for the MOS1 tube, a low level is opened for the MOS2 tube, and the power supply V at the stage isDCThe inductor L is charged, a reference current (larger than an IGCT maintaining current) is set, when the detection current is larger than the reference current, a signal is turned off for the MOS1 tube, the MOS2 tube is closed at a high level, and the inductor L discharges through the IGCT and the diode D2 again. Wherein D1 and D2 are provided to define the discharge path mainly by the reverse blocking characteristic of the diode。
In summary, by repeating the above processes, the current flowing through the IGCT can be always kept near the on-state gate-holding current, and the IGCT is prevented from being turned off by mistake.
Since the processes and functions implemented by the electrical apparatus of this embodiment substantially correspond to the embodiments, principles, and examples of the apparatus shown in fig. 1, reference may be made to the related descriptions in the foregoing embodiments without being detailed in the description of this embodiment.
Through a large amount of experimental verifications, adopt the technical scheme of the utility model, through adopting real-time current detection circuit, opening and turn-off of control switch pipe are stable in order to guarantee the holding current, can prevent that IGCT from appearing the turn-off problem by oneself in the use, avoid IGCT to appear the mistake in the use and turn-off, improve the reliability that IGCT used.
According to the embodiment of the present invention, there is also provided a gate driving method for IGCT of an electrical device corresponding to the electrical device, as shown in fig. 5. The gate driving method of the IGCT of the electrical apparatus may include: step S110 to step S140.
At step S110, detecting, by the detection unit, a gate current of the IGCT in a case where the IGCT is turned off and needs to be turned on; and generating an IGCT turn-on signal when the detected gate current of the IGCT reaches the IGCT set turn-on current.
Alternatively, the detecting the gate current of the IGCT by the detecting unit in step S110 may include: the current of the sampling resistor is left through detection by a sampling resistor arranged between a power supply of the IGCT and a gate pole of the IGCT, and the current flowing through the sampling resistor is used as the gate pole current of the IGCT.
For example: in the three terminals G, A, K of the IGCT (integrated gate commutated thyristor), G is the thyristor gate, a is the thyristor anode, and K is the thyristor cathode. The current flowing into the gate can be monitored in real time by using resistance sampling. The gate electrode current detection circuit mainly detects the gate electrode current of the IGCT through a gate electrode driving resistor, compares the gate electrode current with the on-state gate electrode maintaining current through an operational amplifier and inputs an output signal into the FPGA.
Therefore, the gate electrode driving resistor of the IGCT is used as the sampling resistor to sample the gate electrode current of the IGCT, and the gate electrode current of the IGCT can be collected without additionally adding sampling equipment, so that the method is simple and convenient.
At step S120, the IGCT is controlled to be turned on according to the on signal of the IGCT by the control unit.
At step S130, the gate current of the IGCT is continuously detected by the detection unit also in case the IGCT is turned on; and generating an IGCT turn-on maintaining signal under the condition that the gate current of the IGCT detected continuously is less than the set IGCT turn-on maintaining current. The set holding current for the IGCT is on, i.e., the set holding current for the case where the IGCT is on.
In step S140, the control unit further adjusts the gate current of the IGCT to maintain the IGCT turned on according to the turn-on maintaining signal of the IGCT, i.e. controls the gate current of the IGCT to increase to the set turn-on maintaining current to maintain the IGCT turned on.
For example: the gate drive circuit of the integrated gate commutated thyristor aims to provide an on-state gate maintaining current for the thyristor to maintain the on state of the IGCT, the gate current is enabled to be stable in a dynamic change mode through a control circuit, and the stable on state of a switch device can be guaranteed by providing the stable gate current, so that the error turn-off is prevented. Particularly, by adopting the real-time current detection circuit, the on-off of the switch tube is controlled to ensure the stability of the maintaining current, the problem of self-turn-off of the IGCT in the use process can be prevented, the error turn-off of the IGCT in the use process is avoided, and the reliability of the IGCT is improved. In addition, because the working state of the IGCT is monitored in real time and the gate current is controlled in real time, the minimum gate maintaining current applied to the gate can reduce energy loss, and thus, the energy loss caused by the continuous overhigh gate applying current of the IGCT can be avoided.
Therefore, when the IGCT is switched on, the gate current of the IGCT is adjusted to maintain the IGCT to be switched on continuously under the condition that the detected gate current of the IGCT is smaller than the set switching-on maintaining current of the IGCT, so that the error switching-off of the IGCT can be avoided, and the working reliability of the IGCT is improved.
Optionally, in step S120, the controller controls the IGCT to be turned on through the switch module, which may include: the controller controls the first switch tube to be disconnected, the third switch tube to be disconnected and controls the second switch tube to be closed, so that the energy storage element forms a conduction path of the IGCT in a discharging mode of the IGCT and the second discharging module.
For example: for example: power supply VDCCharging inductor L, RLFor sampling the resistance, when a flow through the resistance R is detectedLWhen the current reaches the switching-on pulse current of the IGCT, the MOS1 tube and the MOS3 tube are disconnected, and the MOS2 tube is closed. Inductor L via resistor RLIGCT and diode D1Discharge, with the IGCT in a fully on state.
Alternatively, in step S140, the controller adjusts the gate current of the IGCT by adjusting the PWM duty cycle of the input current of the current maintenance module, which may include: the controller controls the first switch tube to be switched on and controls the second switch tube to be switched off, so that the energy storage element supplements current for the gate pole of the IGCT in a discharging mode of the IGCT and the first discharging module.
For example: sampling resistor RLAre all collecting the current flowing through the resistor RLThe current data, the detection current and the holding current of the IGCT are compared, in order to avoid the error turn-off of the IGCT, when the detection circuit current is smaller than the holding current of the IGCT, a high level is closed for the MOS1 tube, a low level is opened for the MOS2 tube, and the power supply V at the stage isDCThe inductor L is charged, a reference current (larger than an IGCT maintaining current) is set, when the detection current is larger than the reference current, a signal is turned off for the MOS1 tube, the MOS2 tube is closed at a high level, and the inductor L discharges through the IGCT and the diode D again.
Therefore, the switching control and gate current maintenance of the IGCT are realized by matching the discharging module and the energy storage module with the switching tube, so that the IGCT can be reliably opened and used, and the reliability and convenience of the IGCT are improved.
Since the processes and functions implemented by the method of the present embodiment substantially correspond to the embodiments, principles, and examples of the electrical apparatus, reference may be made to the related descriptions in the foregoing embodiments without being detailed in the description of the present embodiment.
Through a large number of tests, the technical scheme of the embodiment is adopted, the gate current is controlled in real time by monitoring the working state of the IGCT, and the minimum gate maintenance current is applied to the gate, so that the energy loss can be reduced.
In summary, it is readily understood by those skilled in the art that the advantageous modes described above can be freely combined and superimposed without conflict.
The above description is only an example of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (7)
1. A gate driving apparatus of an IGCT, comprising: a detection unit and a control unit; wherein the content of the first and second substances,
the detection unit is used for detecting the gate pole current of the IGCT under the condition that the IGCT is turned off and needs to be turned on; and generating an IGCT turn-on signal when the detected gate pole current of the IGCT reaches the set IGCT turn-on current;
the control unit is used for controlling the IGCT to be switched on according to the switching-on signal of the IGCT;
the detection unit is also used for continuously detecting the gate pole current of the IGCT under the condition that the IGCT is switched on; and generating an IGCT turn-on maintaining signal under the condition that the gate pole current of the IGCT which is continuously detected is smaller than the set turn-on maintaining current of the IGCT;
and the control unit is also used for adjusting the gate pole current of the IGCT according to the opening maintaining signal of the IGCT so as to maintain the IGCT to be continuously opened.
2. The gate driving device according to claim 1, wherein the detection unit comprises: sampling a resistor;
and the sampling resistor is arranged between the power supply of the IGCT and the gate pole of the IGCT, and is used for reserving the current per se by detecting the current and taking the current flowing through per se as the gate pole current of the IGCT.
3. A gate drive apparatus as claimed in claim 1 or 2, wherein the control unit comprises: the device comprises a controller, a switch module and a current maintaining module;
the switch module is arranged between the gate pole of the IGCT and the first connection end of the power supply of the IGCT;
the controller is used for controlling the switch module according to the opening signal of the IGCT so as to control the IGCT to be opened through the switch module;
the current maintaining module is arranged between the cathode of the IGCT and the second connecting end of the power supply of the IGCT;
and the controller is also used for controlling the current maintaining module according to the turn-on maintaining signal of the IGCT so as to adjust the gate current of the IGCT by adjusting the PWM duty ratio of the input current of the current maintaining module.
4. The gate driving device of claim 3, wherein the current maintaining module comprises: the first switch tube and the second switch tube; a switch module comprising: a third switching tube;
the first switching tube is arranged between the second connecting end of the power supply of the IGCT and the gate pole of the IGCT;
the second switching tube is arranged between the gate pole of the IGCT and the cathode of the IGCT;
and the third switching tube is arranged between the gate pole of the IGCT and the first connection end of the power supply of the IGCT.
5. The gate driving device of claim 4, wherein the current maintaining module further comprises: the device comprises an energy storage module, a first discharging module and a second discharging module;
the energy storage module is arranged between the first switching tube and the gate pole of the IGCT and used for storing energy by using the power supply under the condition that the first switching tube is switched on;
the first discharging module is arranged between the first switching tube and the third switching tube; the second discharge module is arranged between the first switching tube and the second switching tube;
the controller passes through the switch module control IGCT and switches on, includes:
the controller controls the first switch tube to be disconnected, the third switch tube to be disconnected and controls the second switch tube to be closed, so that the energy storage element forms a conduction path of the IGCT in a discharging mode of the IGCT and the second discharging module;
the controller adjusts the gate current of the IGCT by adjusting the PWM duty cycle of the input current to the current maintenance module, comprising:
the controller controls the first switch tube to be switched on and controls the second switch tube to be switched off, so that the energy storage element supplements current for the gate pole of the IGCT in a discharging mode of the IGCT and the first discharging module.
6. The gate driving device of claim 4, wherein the switch module further comprises: a back electromotive force module;
and the back electromotive force module is arranged between the third switching tube and the cathode of the IGCT and is used for providing back electromotive force when the IGCT is switched off.
7. An electrical device, comprising: the gate driving device of IGCT as claimed in any of claims 1-6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020407130.8U CN211656108U (en) | 2020-03-26 | 2020-03-26 | IGCT's grid drive arrangement and electrical equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020407130.8U CN211656108U (en) | 2020-03-26 | 2020-03-26 | IGCT's grid drive arrangement and electrical equipment |
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| CN211656108U true CN211656108U (en) | 2020-10-09 |
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| CN202020407130.8U Active CN211656108U (en) | 2020-03-26 | 2020-03-26 | IGCT's grid drive arrangement and electrical equipment |
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| CN (1) | CN211656108U (en) |
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