CN211653133U

CN211653133U - Time-of-flight receiver, module, system and terminal

Info

Publication number: CN211653133U
Application number: CN201922401140.0U
Authority: CN
Inventors: 邓明育
Original assignee: Shenzhen Jinghong Technology Co ltd
Current assignee: Shenzhen Jinghong Technology Co ltd
Priority date: 2019-12-27
Filing date: 2019-12-27
Publication date: 2020-10-09
Anticipated expiration: 2029-12-27

Abstract

The embodiment of the utility model provides a flight time receiver, module, system and terminal, including the camera lens, be used for receiving the combination light; the optical filter is used for filtering the combined light; the germanium-silicon image sensor is used for receiving the optical signal of the preset frequency spectrum and converting the optical signal into three-dimensional image information. The embodiment of the utility model provides a time of flight receiver, module, system and terminal have improved the detection precision to infrared light.

Description

Time-of-flight receiver, module, system and terminal

Technical Field

The utility model relates to a three-dimensional perception technical field especially relates to a time of flight receiver, module, system and terminal.

Background

In the three-dimensional sensing technology, at present, three common methods are mainly used, one is a binocular stereo method, the other is a structured light method, and the other is a flight time method, which are all used for measuring distance or depth; among them, the time-of-flight method has more advantages and is more popular in the market. Time Of Flight, also known as TOF, an acronym for Time-Of-Flight, refers to a technique that uses the Time Of Flight Of light to achieve accurate distance or depth measurements. The system is widely applied to the fields of the consumer electronics industry such as mobile phones, financial payment, automobile driving, AR/VR game entertainment, medical care, intelligent wearing, unmanned aerial vehicles, robots, electronic fences and the like.

In the traditional flight time technology, the commonly used 850 nm-950 nm short-wave infrared ray has the highest modulation frequency of no more than 100MHz, and the CMOS image sensor of the silicon substrate has the photoelectric conversion quantum efficiency of about 40% at 940nm and basically approaches zero at 1000nm when the wavelength of the ray is longer, so that the detection precision is only 1% at the highest even under the condition of being optimized to be extreme, thereby affecting the three-dimensional imaging effect, and the short-wave infrared ray can also generate radiation, thereby causing great harm to human eyes, and the short-wave infrared ray must be controlled at lower power in a short distance range, thereby also reducing the depth detection precision; and the low power control in the middle-distance and long-distance range can not be detected at all, and the application of the flight time technology is limited based on the structural defects of the CMOS image sensor.

Disclosure of Invention

Problem to prior art existence, the embodiment of the utility model provides a time of flight receiver, along the direction of penetrating into of combination light the time of flight receiver includes in proper order: camera lens, filter and germanium silicon image sensor, wherein:

the lens is used for receiving the combined light; the combined light comprises a reflected light signal and natural light, wherein the reflected light signal is a modulated light signal which is obtained by modulation processing in advance and is reflected back by a target object in a shooting lens;

the optical filter is used for filtering the combined light so as to enable an optical signal with a preset frequency spectrum in the reflected optical signal to penetrate through the optical filter;

the germanium-silicon image sensor is used for receiving the optical signal of the preset frequency spectrum and converting the optical signal into three-dimensional image information; the germanium-silicon image sensor comprises a composite substrate layer, wherein an enhanced absorption pixel sensor is embedded in the composite substrate layer; the pixel sensor comprises an absorption-enhancing photodetector, a transistor, and a conductive path connecting the absorption-enhancing photodetector and the transistor, the composite substrate layer comprises at least a two-layer structure composed of a silicon layer and a layer containing a germanium element in this order, and the absorption-enhancing photodetector is embedded in the layer containing the germanium element.

Wherein the composite substrate layer comprises:

a two-layer structure composed of a silicon layer and a germanium-silicon layer;

alternatively, a two-layer structure consisting of a silicon layer and a germanium layer.

Wherein the composite substrate layer comprises:

a three-layer structure composed of a silicon layer, a germanium-silicon layer and a silicon layer;

alternatively, a three-layer structure consisting of a silicon layer and a germanium layer and a silicon layer.

The germanium-silicon image sensor is a front-illuminated BSI (base band information) framework, a back-illuminated BSI framework or a stacked Stack framework.

The germanium-silicon image sensor is packaged by COB, CSP, FC, COM, CLCC or PLCC.

The germanium-silicon image sensor absorbs optical signals in any waveband in the wavelength of 850 nm-1550 nm and/or receives optical signals in any waveband in the frequency spectrum of 100 MHZ-300 MHZ.

The embodiment of the utility model provides a time of flight module that contains above-mentioned time of flight receiver, the time of flight module still includes time of flight transmitter and circuit board, wherein:

the flight time transmitter is used for transmitting an infrared light signal;

the circuit board is used for physically fixing and electrically connecting the time-of-flight receiver and the time-of-flight transmitter.

The embodiment of the utility model provides a time of flight module that contains above-mentioned time of flight module, the time of flight module still includes frequency drive ware and control processor, wherein:

the frequency driver is used for controlling the flight time transmitter to transmit the infrared light signal after coupling the active light source with the modulation frequency;

the control processor is used for executing corresponding control operation in the emitting process of the active light source and the receiving process of the optical signal of the preset frequency spectrum, and calculating and processing the received three-dimensional image information;

correspondingly, the circuit board is used for physically fixing and electrically connecting the time-of-flight receiver, the time-of-flight transmitter, the frequency driver and the control processor.

The embodiment of the utility model provides a time-of-flight system including above-mentioned time-of-flight module, the time-of-flight system still includes vertical cavity surface emitting laser and light equalizing piece; wherein:

the vertical cavity surface emitting laser is used for providing an active light source so that the frequency driver can emit the infrared light signal after coupling the active light source with the modulation frequency generated by the frequency driver;

the light homogenizing sheet is used for carrying out divergent emission on the infrared light signals.

The embodiment of the utility model provides a time of flight terminal including above-mentioned time of flight system, the time of flight terminal still includes application processor and memory; wherein:

the application processor is used for executing corresponding control operation according to the terminal application scene and the calculation processing result of the three-dimensional image information;

and the memory is used for exchanging data with the application processor and storing corresponding information.

The embodiment of the utility model provides a time of flight receiver, the module, a module, system and terminal, through the direction of penetrating along combination light including the camera lens in proper order, light filter and germanium silicon image sensor, this germanium silicon image sensor piles up the composite substrate layer, it absorbs the pixel sensor to have the reinforcing to bury in this composite substrate layer, and this composite substrate layer is at least including the bilayer structure of compriseing silicon layer and the layer that includes germanium element in proper order, and this reinforcing absorption photoelectric detector is buried in the layer that includes germanium element, the detection precision to infrared light has been improved, can also avoid selecting the injury that long wave infrared light led to the fact to people's eye.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.

FIG. 1 is a schematic structural diagram of an embodiment of a time-of-flight receiver according to the present invention;

fig. 2 is a schematic structural diagram of a germanium-silicon image sensor according to an embodiment of the present invention;

fig. 3 is a schematic structural diagram of an embodiment of a time-of-flight module according to the present invention including the above-mentioned time-of-flight receiver;

fig. 4 is a schematic structural diagram of an embodiment of a time-of-flight module according to the present invention, which includes the above-mentioned time-of-flight module;

fig. 5 is a schematic structural diagram of an embodiment of a time-of-flight system according to the present invention, which includes the above-mentioned time-of-flight module;

fig. 6 is a schematic structural diagram of an embodiment of the time-of-flight terminal including the above time-of-flight system of the present invention.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.

For a better understanding of the embodiments of the present invention, the following is briefly introduced:

in order to make the photodetector have better photoelectric conversion quantum efficiency, doping in CMOS is a very effective method, wherein germanium belongs to the carbon group, is an important semiconductor material, is also a main infrared optical material, has a low band gap, has a high absorption coefficient, and thus, can enhance the photoelectric conversion quantum efficiency. Silicon germanium has a lower band gap than elemental silicon and thus absorbs infrared radiation better. The high photoelectric conversion quantum efficiency can be used for the light radiation with the wavelength of more than 800nm, including the commonly used light radiation with the wavelengths of 850nm, 940nm, 1100nm, 1310nm and 1550nm, and/or can also include the wavelength of between 1 micron and 2.5 microns, between 0.8 micron and 2.5 microns, and between 0.8 micron and 3 microns. Such a silicon germanium image sensor allows the photodetector to be used for high wavelength radiation without a large thickness, and the cost, die size, crosstalk, or any combination of the above is low.

In addition, the current conventional time-of-flight receiver generally uses infrared light with a wavelength of 850nm to 940nm, infrared radiation of the current conventional time-of-flight receiver easily brings a large risk of injury to human retinas, and is also easily interfered by natural environments such as sunlight and the like to cause deterioration of detection accuracy and detection distance when used outdoors, and in addition, the frequency of use is relatively low and generally does not exceed 100MHz, so that the performance of the current conventional time-of-flight receiver is reduced on the whole.

Fig. 1 is the utility model discloses time of flight receiver embodiment schematic structure, as shown in fig. 1, the embodiment of the utility model provides a time of flight receiver along the direction of penetrating into of combination light time of flight receiver includes in proper order: lens 300, filter 200 and germanium-silicon image sensor 100, wherein:

the lens 300 is used for receiving the combined light; the combined light comprises a reflected light signal and natural light, wherein the reflected light signal is a modulated light signal which is obtained by modulation processing in advance and is reflected back by a target object in a shooting lens; the target object may include all objects in the scene of the taking lens that reflect the modulated light signal.

The optical filter 200 is configured to filter the combined light, so that an optical signal with a preset frequency spectrum in the reflected light signal passes through the optical filter; the specific numerical value of the preset frequency spectrum can be set independently according to actual conditions.

The germanium-silicon image sensor 100 is configured to receive the optical signal with the preset frequency spectrum and convert the optical signal into three-dimensional image information; the germanium-silicon image sensor 100 comprises a composite substrate layer 110, wherein an enhanced absorption pixel sensor 120 is embedded in the composite substrate layer 110; the absorption-enhanced pixel sensor 120 includes an absorption-enhanced photodetector 1000, a transistor 2000, and a conductive path 3000 connecting the absorption-enhanced photodetector 1000 and the transistor 2000, the composite substrate layer 110 includes at least a two-layer structure composed of a silicon layer and a layer containing a germanium element in this order, and the absorption-enhanced photodetector 1000 is buried in the layer containing the germanium element. Converting an optical signal of a preset frequency spectrum into three-dimensional image information containing a target object is a method in the prior art. Since enhanced absorption photodetector 1000 is embedded in a layer containing elemental germanium, referring to fig. 1, it can be determined that composite substrate layer 110 comprises, in order from top to bottom, a silicon layer and a layer containing elemental germanium.

The enhanced absorption photodetector 1000 described above is buried in a CMOS process of germanium or silicon-germanium, which has a lower bandgap than silicon and is better absorbing for infrared radiation, and thus, the enhanced absorption photodetector 1000 has good sensitivity and absorption for high wavelength radiation (e.g., infrared radiation).

Fig. 2 is a schematic structural diagram of a germanium-silicon image sensor according to an embodiment of the present invention; as shown in fig. 2, the composite substrate 110 of the sige image sensor 100 may include a front side semiconductor layer 1001, an absorption enhancement semiconductor layer 1002, a back side semiconductor layer 1003, a defined absorption enhancement structure 1004 (a zigzag structure in fig. 2), and a passivation layer 1005. The front semiconductor layer 1001 may include silicon, the absorption enhancement semiconductor layer 1002 may include germanium or silicon germanium, or the absorption enhancement semiconductor layer 1002 may include silicon doped with a chalcogen element.

The band gap of the front semiconductor 1001 is larger than 1 ev, and the band gap of the absorption enhancement semiconductor layer 1002 is smaller than 1 ev. The front-side semiconductor layer 1001 directly contacts the absorption enhancement semiconductor layer 1002 at a front-side heterojunction, and the back-side semiconductor layer 1003 directly contacts the absorption enhancement semiconductor layer 1002 at a back-side heterojunction; therefore, a front-side buffer region is formed between the front-side semiconductor layer 1001 and the absorption enhancement semiconductor layer 1002, and a back-side buffer region is formed between the back-side semiconductor layer 1003 and the absorption enhancement semiconductor layer 1002.

The front-side buffer region and the back-side buffer region each include a semiconductor material having an increased carbon concentration with respect to the front-side semiconductor layer 1001, the absorption enhancement semiconductor layer 1002, and the back-side semiconductor layer 1003. The limited absorption enhancement structure 1004 having a saw-tooth structure with a plurality of protrusions is included between the backside semiconductor 1003 and the passivation layer 1005.

The incident light radiation 5000 (i.e. a light signal of a predetermined spectrum) can pass through the above-mentioned semiconductor material having a pore structure (i.e. a porous semiconductor material) in the front-side semiconductor layer 1001, the pores acting as light traps for the incident light radiation 5000, thereby enhancing absorption. The angled sidewalls of the aperture can make it difficult for incident light radiation 5000 entering the aperture to subsequently reflect out of the aperture; moreover, incident light radiation 5000 is more likely to be reflected within the hole until it is absorbed.

The incident light radiation 5000 can pass through the porous semiconductor material in the backside semiconductor 1003, so as to form different stacked structures of the sige image sensor 100. For the stacked structure of the sige image sensor 100, the former is generally called a front-illuminated BSI structure, and the latter is called a back-illuminated BSI structure, where BSI is back-illuminated. In the CMOS process, there may be a vertical stacking structure or a horizontal stacking structure, and the absorption enhancement pixel sensor 120 may be horizontally stacked to form a single pixel, a linear array pixel, and an area array pixel.

During use of the sige image sensor 100, incident light radiation 5000 incident on the absorption enhanced photodetector 1000 enters the absorption enhanced semiconductor layer 1002 and is absorbed by the absorption enhanced semiconductor layer 1002. Electron-hole pairs 4000 are generated in response to the absorption of radiation photons 5000 p. Since the absorption enhancement semiconductor layer 1002 has a low band gap, the absorption enhancement semiconductor layer 1002 has a high absorption coefficient. This in turn enhances the absorption of incident light radiation 5000 by the absorption enhanced photodetector 1000, thereby enabling the absorption enhanced photodetector 1000 to have a higher photoelectric conversion quantum efficiency. The higher photoelectric conversion quantum efficiency allows the absorption enhanced photodetector 1000 to be used for high wavelength infrared radiation at wavelengths greater than 800nm, up to 1550 nm.

The filter 200, which is interposed between the sige image sensor 100 and the lens 300, may allow radiation of the incident light 5000 within a very narrow interval of 850nm, 905nm, 940nm, 1100nm, 1310nm, 1375nm, 1550nm or other specific wavelengths, or any combination thereof, or any radiation within 800nm to 1550 nm. In practice, application scenes in direct contact with human eyes easily exist, and infrared light radiation with high wavelength can be selected, so that eye safety is guaranteed.

The germanium-silicon image sensor 100 can receive infrared light of 800 nm-1550 nm.

The germanium-silicon image sensor 100 can achieve 70% of photoelectric conversion rate at 940nm and still achieve 50% of photoelectric conversion rate at 1550 nm.

The germanium-silicon image sensor 100 can capture the modulation frequency between 100MHz and 300 MHz.

The filter 200 may comprise any one or a combination of glass and plastic.

The filter 200 may pass infrared light of a small wavelength in the range of 850nm to 1150nm, or infrared light of a large wavelength, or all infrared light in this range, or any combination of the above.

The flight time receiver can select infrared light rays with longer wave bands for ensuring the safety of human eyes and avoid the radiation of infrared light rays with shorter wave bands.

The embodiment of the utility model provides a time of flight receiver, through the direction of penetrating into along combination light including the camera lens in proper order, light filter and germanium silicon image sensor, this germanium silicon image sensor piles up the composite substrate layer, it absorbs the pixel sensor to have the reinforcing to bury in this composite substrate layer, and this composite substrate layer is at least including the bilayer structure of compriseing silicon layer and the layer that includes germanium element in proper order, and this reinforcing absorbs photoelectric detector and is buried in the layer that includes germanium element, the detection precision to infrared light has been improved, can also avoid selecting the injury that long wave infrared light led to the fact to people's eye.

On the basis of the above embodiment, the composite substrate layer 110 includes: a two-layer structure composed of a silicon layer and a germanium-silicon layer; alternatively, a two-layer structure consisting of a silicon layer and a germanium layer.

The embodiment of the utility model provides a time-of-flight receiver, through the two-layer structure of constituteing by silicon layer and germanium-silicon layer; or the two-layer structure consisting of the silicon layer and the germanium layer further improves the detection precision of infrared light and can avoid the damage of selecting long-wavelength infrared light to human eyes.

On the basis of the above embodiment, the composite substrate layer 110 includes: a three-layer structure composed of a silicon layer, a germanium-silicon layer and a silicon layer; alternatively, a three-layer structure consisting of a silicon layer and a germanium layer and a silicon layer. The present invention is not limited to the number of layer structures.

The embodiment of the utility model provides a time-of-flight receiver, through the three-layer structure of constituteing by silicon layer and germanium silicon layer and silicon layer; or the three-layer structure consisting of the silicon layer, the germanium layer and the silicon layer further improves the detection precision of infrared light and can avoid the damage of selecting long-wavelength infrared light to human eyes.

Based on the above embodiments, the sige image sensor 100 is a front-illuminated BSI architecture, a back-illuminated BSI architecture, or a stacked Stack architecture. Reference is made to the above description and no further description is made.

The embodiment of the utility model provides a time of flight receiver has further optimized germanium silicon image sensor's framework, and then has improved the detection precision to infrared light, can also avoid selecting the injury that long wave infrared light caused to people's eye.

On the basis of the above embodiments, the sige image sensor 100 is packaged by COB, CSP, FC, COM, CLCC or PLCC. The above specific packaging methods are all conventional packaging methods in the art, and are not particularly limited.

The embodiment of the utility model provides a time of flight receiver has further realized encapsulating germanium silicon image sensor, and then has improved the detection precision to infrared light, can also avoid selecting the injury that long wave infrared light caused to people's eye.

On the basis of the above embodiment, the sige image sensor 100 absorbs optical signals in any band of 850nm to 1550nm and/or receives optical signals in any band of 100MHZ to 300MHZ spectrum. Reference is made to the above description and no further description is made.

The embodiment of the utility model provides a time of flight receiver further can improve and predetermine frequency spectrum light signal's wave band and frequency channel, has improved the precision of degree of depth detection.

Fig. 3 is the utility model discloses time of flight module embodiment schematic structure diagram containing above-mentioned time of flight receiver, as shown in fig. 3, the embodiment of the utility model provides a time of flight module containing above-mentioned time of flight receiver 10, the time of flight module still includes time of flight transmitter 11 and circuit board 12, wherein:

the flight time transmitter 11 is used for transmitting an infrared light signal; the circuit board 12 is used to physically secure and electrically connect the time-of-flight receiver 10 and the time-of-flight transmitter 12.

The embodiment of the utility model provides a time of flight module, through the direction of penetrating into along combination light including the camera lens in proper order, light filter and germanium silicon image sensor, this germanium silicon image sensor piles up the composite substrate layer, it absorbs the pixel sensor to have the reinforcing to bury in this composite substrate layer, and this composite substrate layer is at least including the bilayer structure of compriseing silicon layer and the layer that includes germanium element in proper order, and this reinforcing absorbs photoelectric detector and is buried in the layer that includes germanium element, the detection precision to infrared light has been improved, can also avoid selecting the injury that long wave infrared light caused to people's eye.

Fig. 4 is a schematic structural diagram of an embodiment of a time-of-flight module including the above time-of-flight module according to the present invention, as shown in fig. 4, an embodiment of the present invention provides a time-of-flight module including the above time-of-flight module, where the time-of-flight module further includes a frequency driver 13 and a control processor 14;

the frequency driver 13 is configured to control the time-of-flight transmitter 11 to transmit the infrared light signal after coupling the active light source with the modulation frequency;

the control processor 14 is configured to perform corresponding control operations in the emitting process of the active light source and the receiving process of the optical signal with the preset frequency spectrum, and perform calculation processing on the received three-dimensional image information; the specific control operation can be set autonomously according to actual conditions, and the method for executing the corresponding control operation and performing calculation processing on the three-dimensional image information is the method in the prior art.

Accordingly, the circuit board 12 is used to physically fix and electrically connect the time-of-flight receiver 10, the time-of-flight transmitter 11, the frequency driver 13 and the control processor 14.

Fig. 5 is a schematic structural diagram of an embodiment of a time-of-flight system including the above time-of-flight module according to the present invention, as shown in fig. 5, an embodiment of the present invention provides a time-of-flight system including the above time-of-flight module, where the time-of-flight module further includes a vertical cavity surface emitting laser 11a and a light-equalizing sheet 11 b;

the vertical cavity surface emitting laser 11a is configured to provide an active light source, so that the frequency driver 13 emits the infrared light signal after coupling the active light source with a modulation frequency generated by itself; the light homogenizing sheet 11b is used for emitting the infrared light signal in a divergent mode. Referring to fig. 5, the control processor 14 simultaneously controls the frequency driver 13 and the vcsel 11a to generate a light signal 5001 (corresponding to the ir light signal) coupled with a specific frequency and a specific frequency spectrum, and uniformly emits a modulated light signal 5002 outward through the light equalizer 11b, the modulated light signal 5002 is reflected back to form a reflected light signal 5003 after encountering a target object 7000, and enters the lens 300 together with a light 6000 (corresponding to the natural light) from the nature, the captured reflected light signal 5004 and the captured nature light 6001 allow a light signal 5000 (corresponding to the incident light radiation) with a specific frequency spectrum to pass through the filter 200 after passing through the filter 200, the sige image sensor 100 generates three-dimensional image information after absorbing the light signal 5000 with a specific frequency spectrum, wherein the three-dimensional image information may include a photoelectric signal having infrared image information and depth image information.

The utility model discloses time of flight system includes: a control processor 14, a frequency driver 13, a vertical cavity surface emitting laser 11a, a light equalizing sheet 11b, a lens 300, an optical filter 200 and a germanium-silicon image sensor 100.

The control processor 14 is used for controlling the whole process of the start timing and the end timing of the flight time, processing the image information, and sending the transmission data to the application processor 15.

The frequency driver 13 is used for generating a modulation frequency signal (corresponding to the modulation frequency).

The vertical cavity surface emitting laser 11a described above is used to generate an optical signal (corresponding to an active light source) of a specific spectral wavelength perpendicular to the cavity surface.

The light uniformizing sheet 11b is used for uniformly diffusing the frequency modulated light signal (corresponding to the infrared light signal).

The lens 300 is used for receiving natural light and a reflected frequency-modulated optical signal (corresponding to a reflected optical signal).

The filter 200 is used to allow the reflected optical signal with the predetermined frequency spectrum to pass through.

The sige image sensor 100 is configured to receive the optical signal with the preset frequency spectrum and convert the optical signal into three-dimensional image information, where the three-dimensional image information may include an optical-electrical signal with infrared image information and depth image information.

The control processor 14 includes: a control unit 14a, a photoelectric signal processing unit 14b, an image quality correction unit 14c, a time-of-flight correction unit 14d, and an information processing unit 14 e.

The control unit 14a is used to control the start and end of the flight time and the processing of the process data.

The photoelectric signal processing unit 14b is configured to perform noise reduction gain processing on the received time-of-flight photoelectric signal.

The image quality correction unit 14c is configured to perform infrared image information restoration and compensation processing on the received photoelectric signal of the time of flight.

The time-of-flight correction unit 14d is configured to perform depth image information restoration and compensation processing on the received photoelectric signal of time-of-flight.

The signal processing unit 14e is configured to perform an exchange process between the image signal and data.

The control unit 14a is externally connected to the frequency driver 13, the vertical cavity surface emitting laser 11a, the sige image sensor 100, and the application processor 15; the photoelectric signal processing unit 14b, the image quality correction unit 14c, the time-of-flight correction unit 14d, and the information processing unit 14e are connected to each other.

The control unit 14a can receive and send control commands to enable the physical devices connected to the control unit to implement the whole process of starting, running and ending the flight time.

The photoelectric signal processing unit 14b eliminates and filters some basic noise from the three-dimensional image information (original), enhances the detectability of the related information, and simplifies the image data to the maximum extent.

The image quality correction unit 14c may further reprocess the infrared image information, including but not limited to: the compensation to lens distortion parameter, lens uniformity parameter, etc. makes the imaging effect better. Further reprocessing of the depth image information may be performed, including but not limited to: the compensation of an error parameter caused by the temperature change of the camera, a non-linear error parameter caused by the limitation of the device, a common bias parameter generated by the whole pixels when a certain actual distance is detected, a difference parameter generated by the single pixels when a certain actual distance is detected, and the like, enables the camera to be more accurate in distance measurement.

The information processing unit 14e collects and calculates information about the internal and external information including the infrared image information and/or the depth image information, and transmits and stores the information.

The embodiment of the utility model provides a time-of-flight system, through the direction of penetrating into along combination light including the camera lens in proper order, light filter and germanium silicon image sensor, this germanium silicon image sensor piles up the composite substrate layer, it absorbs the pixel sensor to have the reinforcing to bury in this composite substrate layer, and this composite substrate layer is at least including the bilayer structure of compriseing silicon layer and the layer that includes germanium element in proper order, and this reinforcing absorbs photoelectric detector and is buried in the layer that includes germanium element, the detection precision to infrared light has been improved, can also avoid selecting the injury that long wave infrared light caused to people's eye.

Fig. 6 is a schematic structural diagram of an embodiment of a time-of-flight terminal including the above time-of-flight system according to the present invention, as shown in fig. 6, an embodiment of the present invention provides a time-of-flight terminal including the above time-of-flight system, where the time-of-flight terminal further includes an application processor 15 and a memory 16;

the application processor 15 is configured to execute corresponding control operations according to the terminal application scene and the calculation processing result of the three-dimensional image information. Corresponding control operation is executed according to the terminal application scene and the calculation processing result of the three-dimensional image information, which is the prior art and is not described again.

The memory 16 is used for exchanging data with the application processor 15 and storing corresponding information.

The embodiment of the utility model provides a time of flight terminal, through the direction of penetrating into along combination light including the camera lens in proper order, light filter and germanium silicon image sensor, this germanium silicon image sensor piles up the composite substrate layer, it absorbs the pixel sensor to have the reinforcing to bury in this composite substrate layer, and this composite substrate layer is at least including the bilayer structure of compriseing silicon layer and the layer that includes germanium element in proper order, and this reinforcing absorbs photoelectric detector and is buried in the layer that includes germanium element, the detection precision to infrared light has been improved, can also avoid selecting the injury that long wave infrared light caused to people's eye.

Those of ordinary skill in the art will understand that: all or part of the steps for implementing the method embodiments may be implemented by hardware related to program instructions, and the program may be stored in a computer readable storage medium, and when executed, the program performs the steps including the method embodiments; and the aforementioned storage medium includes: various media that can store program codes, such as ROM, RAM, magnetic or optical disks.

The above-described embodiments of the apparatus are merely illustrative, and the units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of the present embodiment. One of ordinary skill in the art can understand and implement it without inventive effort.

Through the above description of the embodiments, those skilled in the art will clearly understand that each embodiment can be implemented by software plus a necessary general hardware platform, and certainly can also be implemented by hardware. With this understanding in mind, the above-described technical solutions may be embodied in the form of a software product, which can be stored in a computer-readable storage medium such as ROM/RAM, magnetic disk, optical disk, etc., and includes instructions for causing a computer device (which may be a personal computer, a server, or a network device, etc.) to execute the methods described in the embodiments or some parts of the embodiments.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention in its corresponding aspects.

Claims

1. A time-of-flight receiver, characterized in that it comprises, in succession, in the direction of incidence of a combined light ray: camera lens, filter and germanium silicon image sensor, wherein:

2. The time-of-flight receiver of claim 1, wherein the composite substrate layer comprises:

3. The time-of-flight receiver of claim 1, wherein the composite substrate layer comprises:

4. The time-of-flight receiver of claim 1, wherein the silicon-germanium image sensor is a front-illuminated BSI architecture, a back-illuminated BSI architecture, or a stacked Stack architecture.

5. The time-of-flight receiver of claim 1, wherein the silicon-germanium image sensor is packaged with a COB, CSP, FC, COM, CLCC, or PLCC.

6. The time-of-flight receiver of claim 1, wherein the sige image sensor absorbs optical signals in any band of wavelengths from 850nm to 1550nm and/or receives optical signals in any band of frequencies from 100MHZ to 300 MHZ.

7. A time of flight module comprising the time of flight receiver of claim 1, the time of flight module further comprising a time of flight transmitter and a circuit board, wherein:

the flight time transmitter is used for transmitting an infrared light signal;

8. A time-of-flight module comprising the time-of-flight module of claim 7, the time-of-flight module further comprising a frequency driver and a control processor, wherein:

9. A time-of-flight system comprising the time-of-flight module of claim 8, wherein the time-of-flight system further comprises a vertical-cavity surface-emitting laser and a light-homogenizing sheet; wherein:

10. A time-of-flight terminal comprising the time-of-flight system of claim 9, wherein the time-of-flight terminal further comprises an application processor and memory; wherein: