CN113053937A - Image sensor and camera - Google Patents

Image sensor and camera Download PDF

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Publication number
CN113053937A
CN113053937A CN202110286763.7A CN202110286763A CN113053937A CN 113053937 A CN113053937 A CN 113053937A CN 202110286763 A CN202110286763 A CN 202110286763A CN 113053937 A CN113053937 A CN 113053937A
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Prior art keywords
layer
photodiode
image sensor
preset
arranged above
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CN202110286763.7A
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Chinese (zh)
Inventor
方欣欣
黄晓橹
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United Microelectronics Center Co Ltd
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United Microelectronics Center Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures

Abstract

The invention discloses an image sensor and a camera, wherein the image sensor comprises a plurality of photodiode units; the photodiode unit includes: a photodiode and a preset layer; the forbidden bandwidth of the preset layer is smaller than a preset threshold value; the preset layer is arranged above the photodiode; back deep channel isolation layers are arranged on two sides of the photodiode unit; a metal layer is arranged above the back deep trench isolation layer; a dielectric layer is arranged above the photodiode units connected through the back deep channel isolation layer; a micro lens is arranged above the medium layer. The invention solves the problem that the absorption efficiency of the NIR waveband is difficult to further improve in the prior art. The germanium-silicon process is compatible with the existing silicon-based process, so that the germanium-silicon layer is free from difficulty in preparation, the ratio of germanium in the germanium-silicon layer can be adjusted, the forbidden bandwidth of the germanium-silicon layer is further adjusted, the NIR absorption efficiency is higher, and the quantum efficiency of the NIR band is further remarkably enhanced.

Description

Image sensor and camera
Technical Field
The present invention relates to the field of image sensors, and in particular, to an image sensor and a camera.
Background
Back-illuminated complementary metal oxide semiconductor (BSI-CMOS) image sensors have become the mainstream of mobile phone cameras, and thus the demand for Near Infrared (NIR) image sensors applied to iris verification, facial recognition, and dynamic capture is increasing. Due to the characteristic of a back-illuminated type, the pixel structure is more suitable for an NIR sensor, but due to the fact that the near infrared application wavelength is longer and is between 700nm and 1000nm, the quantum efficiency of the traditional pixel structure in an NIR waveband is lower, and generally when the NIR wavelength is 850nm, the quantum efficiency is about 10%; at the wavelength of 940nm, the quantum efficiency is about 4%, so that it becomes important for the image sensor to enhance the sensitivity of NIR.
The simplest way to enhance the sensitivity of NIR is to increase the thickness of the incident photon absorbing layer, but this method is difficult to achieve due to limitations in the fabrication process, such as high energy implantation, making it difficult to do so. Recently, black silicon is proposed in the industry to reduce the reflection of the surface and improve the absorption efficiency, and experiments show that the quantum efficiency is about 32% at NIR wavelength of 850 nm; the quantum efficiency is about 15% at the NIR wavelength of 940 nm. Since the improvement of the NIR band absorption efficiency by the black silicon is very limited, further improvement of the NIR band quantum efficiency becomes a new problem.
Aiming at the problem that the absorption efficiency of the NIR wave band is difficult to further improve in the prior art, an effective solution is not provided.
Disclosure of Invention
In view of this, embodiments of the present invention provide an image sensor and a camera to solve the problem in the prior art that it is difficult to further improve the absorption efficiency of the NIR band.
Therefore, the embodiment of the invention provides the following technical scheme:
in a first aspect of the present invention, there is provided an image sensor comprising a plurality of photodiode units; the photodiode unit includes: a photodiode and a preset layer; the forbidden bandwidth of the preset layer is smaller than a preset threshold value;
the preset layer is arranged above the photodiode;
back deep channel isolation layers are arranged on two sides of the photodiode unit; a metal layer is arranged above the back deep trench isolation layer; a dielectric layer is arranged above the plurality of photodiode units connected through the back deep trench isolation layer; and a micro lens is arranged above the medium layer.
Optionally, the image sensor further comprises: the preset layer is of a curved surface structure.
Optionally, the image sensor further comprises: the predetermined layer includes a germanium-silicon layer.
Optionally, the image sensor further comprises: a black silicon layer; wherein the black silicon layer is located between the photodiode and the predetermined layer.
Optionally, the image sensor further comprises: the black silicon layer is of a curved surface body structure matched with the preset layer.
Optionally, the image sensor further comprises: the height of the back deep trench isolation layer is less than or equal to the height of the photodiode.
Optionally, the image sensor further comprises: the backside deep trench isolation layer is formed of a material that absorbs photoelectrons to prevent optical crosstalk.
Optionally, the image sensor further comprises: and an antireflection film is arranged on the micro lens and/or the preset layer and is used for increasing the transmission of incident light in the micro lens and/or the preset layer.
Optionally, the image sensor further comprises: the refractive index of the medium layer is between the refractive index of air and the refractive index of the preset layer material.
In a second aspect of the present invention, there is provided a camera comprising: having an image sensor as described in any of the first aspects.
The technical scheme of the embodiment of the invention has the following advantages:
the embodiment of the invention provides an image sensor and a camera, wherein the image sensor comprises a plurality of photodiode units; the photodiode unit includes: a photodiode and a preset layer; wherein the forbidden bandwidth of the preset layer is less than a preset threshold value; the preset layer is arranged above the photodiode; back deep channel isolation layers are arranged on two sides of the photodiode unit; a metal layer is arranged above the back deep trench isolation layer; a dielectric layer is arranged above the photodiode units connected by the back deep channel isolation layer; a micro lens is arranged above the medium layer. The invention solves the problem that the absorption efficiency of the NIR waveband is difficult to further improve in the prior art. In the embodiment of the invention, the germanium-silicon process is compatible with the existing silicon-based process, so that the germanium-silicon layer has no difficulty in preparation, the ratio of germanium in the germanium-silicon layer can be adjusted to adjust the forbidden bandwidth of the germanium-silicon layer, the NIR absorption efficiency is higher, and the quantum efficiency of the NIR band is obviously enhanced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic diagram of an image sensor according to an embodiment of the present invention.
001 a photodiode; 002 back deep trench isolation layer; 003, a silicon germanium layer; 004 a metal layer; 005 a dielectric layer; 006 micro lens.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are used merely for convenience of description and for simplicity of description, and do not indicate or imply that the referenced device or element must have a particular orientation, be constructed in a particular orientation, and be operated, and thus should not be considered as limiting the present application. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more features. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
In this application, the word "exemplary" is used to mean "serving as an example, instance, or illustration. Any embodiment described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments. The following description is presented to enable any person skilled in the art to make and use the application. In the following description, details are set forth for the purpose of explanation. It will be apparent to one of ordinary skill in the art that the present application may be practiced without these specific details. In other instances, well-known structures and processes are not set forth in detail in order to avoid obscuring the description of the present application with unnecessary detail. Thus, the present application is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features disclosed herein.
According to an embodiment of the present invention, there is provided an image sensor in which technical features involved in different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.
In the present embodiment, an image sensor is provided that can be used in a photographic image pickup apparatus, and fig. 1 is a schematic diagram of an image sensor according to an embodiment of the present invention, which includes a plurality of photodiode units, as shown in fig. 1. The photodiode unit includes: the photodiode 001 and a preset layer, wherein the forbidden band width of the preset layer is smaller than a preset threshold value. Specifically, the absorption efficiency of NIR is improved by using the characteristic of a preset layer having a small energy gap, and the predetermined threshold is at least larger than the energy gap of silicon (1.12 eV).
The predetermined layer is disposed above the photodiode 001. The NIR wave band absorption efficiency of the image sensor is improved by arranging the preset layer in the image sensor.
Backside deep trench isolation layers 002 are disposed on both sides of the photodiode cells. A metal layer 004 is disposed over the back deep trench isolation layer 002. A dielectric layer 005 is disposed over the plurality of photodiode cells connected by the backside deep trench isolation 002. A microlens 006 is disposed above the dielectric layer 005. Specifically, the backside deep trench isolation layer 002 and the metal layer 004 can effectively prevent the generation of optical crosstalk. The back deep trench isolation layers 002 are alternately arranged on the left and right of each photodiode 001 to ensure that each photodiode 001 has back deep trench isolation layers 002 on both sides to avoid optical crosstalk. In addition, light is converged from the outside through the microlens 006 and sequentially enters the dielectric layer 005, the predetermined layer and the photodiode 001, so that the light enters the optically denser medium through the optically thinner medium, and the amplitude of the refractive index jump is reduced by arranging the dielectric layer 005 so that the light enters the optically denser medium through the optically thinner medium.
The existing image sensor is not designed with a preset layer structure, and light is directly emitted into the photodiode 001, but the design makes the image sensor have low absorption efficiency for the NIR band. Unlike the prior art that no preset layer or other structure is designed, the embodiment of the present invention designs a preset layer, a dielectric layer 005, and a microlens 006. This solves the problem that it is difficult to further improve the absorption efficiency of the NIR band. In the embodiment of the invention, due to the existence of the preset layer, the NIR absorption efficiency is higher, and further the quantum efficiency of the NIR wave band is enhanced.
In order to further improve the absorption efficiency of the NIR band, in an alternative embodiment, the predetermined layer has a curved surface structure. Specifically, the curved surface structure comprises a structure with a section in a fold line shape or a wave shape, and the optical path can be effectively increased through the preset layer in the curved surface shape, so that the absorption efficiency of an NIR waveband is improved. And the curved surface structure comprises cones, the optical path length is different due to the different densities of the cones, but the densities of the cones are limited by the size of the pixels, so that the number of the cones on the pixels is usually 1-9000. It should be understood by those skilled in the art that the preset layer structure with a polygonal or wavy cross section in the embodiment of the present invention is not limited to the present invention, and other structures that can enable the preset layer to function as an optical path increasing function are also within the protection scope of the present invention, for example, a structure with a triangular cross section.
In an alternative embodiment, the predetermined layer comprises a silicon germanium layer 003. Germanium silicon has a higher absorption efficiency for a near infrared band with a longer wavelength and a smaller single photon energy because the forbidden band width is smaller than that of silicon.
In an alternative embodiment of the present invention, the image sensor further comprises: a black silicon layer. Wherein the black silicon layer is located between the photodiode 001 and the predetermined layer. Specifically, the black silicon layer and the pixel structure are integrated, and an etching process is usually adopted to etch the back surface of the pixel structure into a curved surface structure matched with the predetermined layer, so as to form the black silicon layer. In addition, black silicon can effectively reduce reflection of incident light, so that the absorption efficiency of an NIR waveband can be effectively improved by arranging the black silicon between the preset layer and the photodiode 001.
To further illustrate the black silicon, in one embodiment, the black silicon layer is a curved structure matching the predetermined layer. Specifically, the black silicon layer is of a curved surface structure, and the black silicon layer is matched with the preset layer, so that the optical path of the black silicon layer can be increased, and the preset layer is matched with the black silicon layer, so that the connection of each part of the image sensor is tighter. It should be understood by those skilled in the art that the curved body structure constituting the black silicon layer in the embodiment of the present invention is not limited to the present invention, and other planar body structures, such as pyramid and rectangular parallelepiped, are also within the scope of the present invention.
To illustrate the role of backside deep trench isolation, in an alternative embodiment, the height of the backside deep trench isolation layer 002 is less than or equal to the height of the photodiode 001. Specifically, the back deep trench isolation layer 002 completely blocks light from the photodiode 001 to prevent crosstalk, but the back deep trench isolation layer 002 cannot completely block the photodiode 001 due to the limitation of the manufacturing process, so the back deep trench isolation layer 002 should have a height of the process limit to improve the absorption efficiency of the NIR band.
To further illustrate the backside deep trench isolation layer 002, in one embodiment, the backside deep trench isolation layer 002 is formed of a material that absorbs photoelectrons to prevent optical crosstalk. Specifically, light incident at an angle is accumulated on the sidewalls due to the blocking of the back deep trench isolation 002, and this portion of light is effectively absorbed, which can both improve quantum efficiency and reduce optical crosstalk.
In an alternative embodiment of the present invention, an anti-reflection film is disposed on the microlens 006 and/or the predetermined layer to increase the transmission of incident light in the microlens 006 and/or the predetermined layer and reduce the reflection of light, so that more light can be incident into the photodiode 001.
In an alternative embodiment, the refractive index of the dielectric layer 005 is between the refractive index of air and the refractive index of the predetermined layer material. When light enters the photodiode 001 from the air, the light enters the optically denser medium from the optically thinner medium, if the difference between the refractive index of the preset layer and the refractive index of the air is large, a large refractive index jump occurs at the boundary of the preset layer and the air, and in order to reduce the jump, the medium layer 005 with the refractive index between the refractive index of the air and the refractive index of the preset layer material is increased, so that the jump amplitude is reduced.
The present embodiment provides a camera having the image sensor of any one of the above embodiments. In particular, the camera can significantly improve the quality of images acquired in the NIR band, and the sensitivity of the camera is significantly improved, so as to rapidly capture moving objects or dynamic images in the NIR band.
Although the embodiments of the present invention have been described in conjunction with the accompanying drawings, those skilled in the art may make various modifications and variations without departing from the spirit and scope of the invention, and such modifications and variations fall within the scope defined by the appended claims.

Claims (10)

1. An image sensor includes a plurality of photodiode cells; the photodiode unit includes: a photodiode and a preset layer; the forbidden bandwidth of the preset layer is smaller than a preset threshold value;
the preset layer is arranged above the photodiode;
back deep channel isolation layers are arranged on two sides of the photodiode unit; a metal layer is arranged above the back deep trench isolation layer; a dielectric layer is arranged above the plurality of photodiode units connected through the back deep trench isolation layer; and a micro lens is arranged above the medium layer.
2. The image sensor of claim 1, wherein the predetermined layer is a curved structure.
3. The image sensor of claim 1, wherein the predetermined layer comprises a silicon germanium layer.
4. The image sensor of claim 2, further comprising: a black silicon layer; wherein the black silicon layer is located between the photodiode and the predetermined layer.
5. The image sensor of claim 4, wherein the black silicon layer is a curved structure matching the predetermined layer.
6. The image sensor of claim 1, wherein a height of the backside deep trench isolation layer is less than or equal to a height of the photodiode.
7. The image sensor of claim 1, wherein the backside deep trench isolation layer is formed of a material that absorbs photoelectrons to prevent optical crosstalk.
8. The image sensor of claim 1, wherein an anti-reflection film is disposed on the micro-lenses and/or the predetermined layer for increasing transmission of incident light in the micro-lenses and/or the predetermined layer.
9. The image sensor as in any of claims 1-8, wherein the dielectric layer has a refractive index between the refractive index of air and the refractive index of the predetermined layer material.
10. A camera, characterized in that it comprises an image sensor according to any one of claims 1 to 9.
CN202110286763.7A 2021-03-17 2021-03-17 Image sensor and camera Pending CN113053937A (en)

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WO2023201196A3 (en) * 2022-04-13 2024-02-01 Illumina, Inc. Sensor with light filter and crosstalk reduction medium

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Application publication date: 20210629