CN211629087U - Multi-pin high-power surge-proof device - Google Patents
Multi-pin high-power surge-proof device Download PDFInfo
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- CN211629087U CN211629087U CN202020850945.3U CN202020850945U CN211629087U CN 211629087 U CN211629087 U CN 211629087U CN 202020850945 U CN202020850945 U CN 202020850945U CN 211629087 U CN211629087 U CN 211629087U
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- functional module
- pin
- pins
- lead frame
- power surge
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- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 229910052802 copper Inorganic materials 0.000 claims description 17
- 239000010949 copper Substances 0.000 claims description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- 238000003475 lamination Methods 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 7
- 238000005476 soldering Methods 0.000 claims description 3
- 239000008188 pellet Substances 0.000 claims 1
- 230000010354 integration Effects 0.000 abstract description 10
- 238000005538 encapsulation Methods 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 7
- 238000003466 welding Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 4
- 208000032365 Electromagnetic interference Diseases 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 208000025274 Lightning injury Diseases 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
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- Emergency Protection Circuit Devices (AREA)
Abstract
The utility model relates to a high-power surge device of preventing of many pins for the high-power surge device of preventing of paster encapsulation, include by the functional module of the combination of semiconductor TVS chip, TVS chip combination, perhaps TVS and TSS chip, by the encapsulation body encapsulation, have three or more than three pin in the encapsulation body bottom surface, directly or indirectly be connected to functional module both ends between two arbitrary pins. The requirements of high power, multiple paths and integration in practical application are met. The problems of device surface mounting flatness, surface mounting machine operability, EMI compatibility, compatibility with an original device bonding pad and the like in the design of the PCB are solved. To address any of the above issues, including but not limited to, the present invention develops a multi-pin high power surge protection device. The method can be suitable for the requirements of integration, pad compatibility, special pad matching and the like.
Description
Technical Field
The utility model belongs to the technical field of the technique of semiconductor anti-surge device and specifically relates to a high-power anti-surge device of many pins, for the high-power anti-surge device of paster encapsulation. To meet market demands for integration, pad compatibility, special pad matching, etc.
Background
Surge (electrical surging), which is the instantaneous occurrence of a peak that exceeds a steady value, includes surge voltage and surge current, is essentially a sharp pulse that occurs in only a few millionths of a second. The reasons that surge may be caused are: lightning strikes, power line splices, vehicle load rejection, and the like.
When lightning surge occurs, dangerous overvoltage can be generated within the range of 1.5-2 KM by taking lightning as the center. The surge caused by lightning stroke is characterized by single-phase pulse type and huge energy. The voltage of the external surge can be quickly increased to 20000V from hundreds of volts within microseconds, a quite long distance can be transmitted, the instantaneous surge can be up to 20000V, and the instantaneous current can reach 10000A. Can cause great damage to the electronic equipment.
Therefore, when equipment is designed, especially outdoor equipment, protection against surge needs to be considered, and the semiconductor anti-surge device is an important component of the anti-surge device. The semiconductor surge-proof device comprises: transient Voltage Suppressors (TVS), semiconductor discharge Tubes (TSS), and the like.
The TVS is a commonly used overvoltage protection device, has the advantages of fast response, large through flow, small volume, small leakage current, high reliability and the like, and is an indispensable protection device.
The TSS is a switch type overvoltage protection device and has the characteristics of accurate conduction, quick response, strong surge absorption capacity, high reliability and the like; when in use, the semiconductor discharge tube can be directly bridged at two ends of the protected circuit. The protective circuit is used for protecting sensitive and vulnerable circuits from damage caused by lightning and breakthrough impact.
With the progress of society, the requirements of electronic equipment on reliability, volume and performance reach extremely strict ground. The demand for anti-surge devices, especially large-current (such as 1.2/50 mus voltage waveform-8/20 mus current waveform 3KA grade TVS device) is increasing.
In some special pad designs, the two original independent pads cannot meet the application requirements. Multiple independent pins are required to be compatible with the bond pads.
In practical application, the requirements of high power multi-path and integration are met. In the design of a PCB, a multi-pin pad needs to be designed in order to solve the problems of flatness of a circuit board, operability of a chip mounter, compatibility of EMI (electro-magnetic interference) or compatibility with an original device pad and the like. To address any of the above issues, including but not limited to, the present invention develops a multi-pin high power surge protection device. The method can be suitable for the requirements of integration, pad compatibility, special pad matching and the like.
Disclosure of Invention
The utility model discloses the technical problem that will solve lies in: a high-power anti-surge device with multiple pins packaged in a surface mounting mode is provided.
The utility model discloses technical problem solves through following scheme: a multi-pin high-power surge-proof device is a chip packaged high-power surge-proof device, and comprises a functional module formed by a semiconductor TVS chip, a TVS chip combination or a TVS and TSS chip combination, wherein the functional module is packaged by a plastic package body, three or more pins are arranged on the bottom surface of the plastic package body, and any two pins are directly or indirectly connected to two ends of the functional module.
On the basis of the scheme, the pins are an upper pin frame with two pins and a lower pin frame with two pins, the upper pin frame is fixed above a functional module formed by copper particles and a chip lamination, the lower pin frame is fixed below the functional module, the pin ends of the upper pin frame and the lower pin frame are bent downwards to the bottom surface of the plastic package body, and the bottom surface is provided with four pins. Or,
on the basis of the scheme, an upper functional module and a lower functional module are superposed, and the upper surface and the lower surface of the upper functional module are respectively connected with an upper lead frame and a middle lead frame of a single lead; the upper surface and the lower surface of the lower functional module are respectively connected with a middle lead frame and a lower lead frame of a single lead; the single pin ends of the upper, middle and lower lead frames are bent downwards to the bottom surface of the plastic package body, and three pins are arranged on the bottom surface.
Functional module constitute by copper grain, chip lamination welding, constitute 8/20 surge ability with pin, plastic-sealed body encapsulation and be greater than the device of 3KA surge level.
The utility model discloses a plastic-sealed body length is not less than 9 millimeters, width is not less than 7 millimeters and highly is not less than 2.8 millimeters.
The plastic-sealed body bottom surface can regard as actual face of weld, with the welding of PCB board.
Because the large volume of the high-power anti-surge device is large, the optimization of the volume is particularly urgent. Use the utility model discloses can two-way or multichannel integration.
The utility model discloses an actively the effect:
the utility model discloses be greater than the device that 3KA required to the 8/20 surge and give an encapsulation construction that has pin more than 3 or 3. The method can be suitable for the requirements of multi-channel integration, special pad matching and the like. The following two positive effects are achieved:
the requirements of high power multi-path and integration in practical application are met, the size of the device is effectively reduced, and the reliability of the device is improved.
The problems of device surface mounting flatness, surface mounting machine operability, EMI compatibility, special pad matching, compatibility with an original device pad and the like in the design of the PCB are solved.
Drawings
FIG. 1 is an external schematic view of a four-pin high-power anti-surge device;
FIG. 2 is a schematic diagram of an internal structure of a four-pin high-power anti-surge device;
FIG. 3 is a schematic diagram of a lead frame on a four-lead high-power anti-surge device;
FIG. 4 is a schematic view of a lead frame of a four-lead high-power anti-surge device;
FIG. 5 is an external schematic view of a three-pin high-power anti-surge device;
FIG. 6 is a schematic diagram of an internal structure of a three-pin high-power anti-surge device;
FIG. 7 is a schematic diagram of a lead frame on a three-lead high-power anti-surge device;
FIG. 8 is a schematic view of a lead frame under a three-lead high-power anti-surge device;
FIG. 9 is a schematic diagram of a lead frame in a three-lead high-power anti-surge device;
the reference numbers in the figures illustrate:
in FIGS. 1 to 4
1-functional Module; 11-TVS chip; 12-copper sheet;
2-plastic package body;
3. 4-upper and lower lead frames;
in FIGS. 5 to 9
5-upper functional Module; 51-TVS chip; 52-copper particles;
6-lower functional Module;
7. 8, 9-upper, middle, and lower lead frames.
Detailed Description
Example 1
A four-pin high-power surge-proof device is a patch-packaged high-power surge-proof device, as shown in figures 1 to 4, and comprises a functional module 1 formed by mutually laminating and welding three same TVS chips 11 and four copper sheets 12, wherein the functional module is packaged by a plastic package body 2, pins are an upper pin frame 3 with two pins and a lower pin frame 4 with two pins, the upper pin frame 3 is fixed above the functional module 1, the lower pin frame 4 is fixed below the functional module 1, pin ends of the upper pin frame 3 and the lower pin frame 4 are downwards bent to the bottom surface of the plastic package body, and the bottom surface is provided with four pins.
The four-pin high-power anti-surge device is prepared by the following steps:
(1) carrying out lamination: taking four copper sheets 12 and three identical chips 11 for mutual lamination, as shown in fig. 2, wherein the chip 11 is a TVS chip with a thickness of 350 microns and a size of 7 × 7MM, and the three chips are identical; the size of the four copper sheets is 7.5MM by 7.5MM, and the thickness of the four copper sheets is 5 MM; after lamination, vacuum welding is carried out, high-lead solder is used in the welding process, and the upper surface and the lower surface of the formed functional module 1 are respectively provided with a copper sheet;
(2) soldering tin paste on the upper and lower copper sheets of the functional module 1, and connecting the upper lead frame 3 shown in fig. 3 and the lower lead frame 7 shown in fig. 4 by using the solder paste;
(3) and (3) plastic packaging, namely, the plastic packaging of the device is completed by a pin bending and rib cutting process, the structure is shown as figure 2, the three-dimensional schematic diagram of the finally obtained device with four separated pins is confirmed from the bottom surface, and the appearance bottom surface is upward is shown as figure 1. However, two pins are actually connected internally, and the design is a multi-pin high-power surge device developed for meeting the requirement of customers for specially designing a bonding pad.
Example 2
A three-pin high-power surge-proof device is a patch packaged high-power surge-proof device, as shown in figures 5 to 9, an upper functional module 5 and a lower functional module 6 which are respectively composed of three copper sheets and two semiconductor chips are packaged by a plastic package body 2, three pins are arranged on the bottom surface of the plastic package body, and any two pins are directly or indirectly connected to two ends of the functional modules. Wherein,
the upper functional module 5 and the lower functional module 6 are overlapped, and the upper surface and the lower surface of the upper functional module 5 are respectively connected with an upper lead frame 7 and a middle lead frame 8 with single lead; the upper surface and the lower surface of the lower functional module 6 are respectively connected with a middle lead frame 8 and a lower lead frame 9 of a single lead; the single pin ends of the upper, middle and lower lead frames 6, 7, 8 are bent downwards to the bottom surface of the plastic package body 2, and three pins are arranged on the bottom surface.
The three-pin high-power anti-surge device is prepared by the following steps:
(1) carrying out lamination: taking three copper particles 52 and two identical TVS chips 51, and laminating the TVS chips 51, wherein the TVS chips 51 are 300 micrometers thick and 8MM large; the copper particles 52 have a size of 8.5MM by 8.5MM and a thickness of 5 MM; performing vacuum welding after lamination, wherein high-lead solder is used in the welding process to obtain an upper functional module 5;
(2) lamination is carried out again: three copper particles and two identical TVS chips are laminated, wherein each TVS chip is a TVS chip 61 with the thickness of 300 micrometers and the size of 8 MM; the copper particles 62 have a size of 8.5MM by 8.5MM and a thickness of 5 MM; performing vacuum welding after lamination, wherein high-lead solder is used in the welding process to obtain a lower functional module 6;
(3) the upper lead frame 7 and the upper functional module 5 shown in fig. 7 are sequentially arranged; the middle lead frame 8, the lower functional module 6, and the lower lead frame 9 shown in fig. 8, as shown in fig. 9, are stacked and soldered to form the structure shown in fig. 6;
(4) and (5) completing plastic package of the device through plastic package and a pin bending and rib cutting process to finally obtain the device. The device is identified with three leads from the bottom surface, and the perspective view with the bottom surface of the shape facing upwards is shown in fig. 5. The high-power integrated circuit comprises an upper pin, a middle pin, a lower pin, a plurality of components and a plurality of voltage sensors, wherein the same surge capacity and avalanche breakdown voltage exist between the upper pin and the middle pin, and between the middle pin and the lower pin, the high-power integrated circuit can be used for multi-channel high-power integration, one component can replace two components, the occupied area of the circuit board is reduced, and.
The embodiment can be suitable for the requirements of integration and pad compatibility.
Claims (6)
1. A multi-pin high-power surge-proof device is a chip packaged high-power surge-proof device and is characterized by comprising a functional module formed by a semiconductor TVS chip, a TVS chip combination or a TVS and TSS chip combination, wherein the functional module is packaged by a plastic package body, three or more pins are arranged on the bottom surface of the plastic package body, and any two pins are directly or indirectly connected to two ends of the functional module.
2. The multi-pin high-power surge protection device according to claim 1, wherein the pins are an upper lead frame with two pins and a lower lead frame with two pins, the upper lead frame is fixed above the functional module formed by the copper pellet and the chip lamination, the lower lead frame is fixed below the functional module, the pin ends of the upper and lower lead frames are bent downward to the bottom surface of the plastic package body, and four pins are arranged on the bottom surface.
3. The multi-pin high-power surge protection device according to claim 1, wherein the device comprises an upper functional module and a lower functional module, wherein the upper surface and the lower surface of the upper functional module are respectively connected with an upper lead frame and a middle lead frame of a single pin; the upper surface and the lower surface of the lower functional module are respectively connected with a middle lead frame and a lower lead frame of a single lead; the pin ends of the upper, middle and lower lead frames are bent downwards to the bottom surface of the plastic package body, and three pins are arranged on the bottom surface.
4. The multi-pin high-power surge protection device according to any of claims 1 to 3, wherein the functional module is formed by soldering copper particles and chip laminations, and the pin and plastic package body is packaged to form a device with 8/20 surge capacity greater than 3KA surge level.
5. The multi-pin high-power surge-proof device according to claim 4, wherein the plastic package has a length of not less than 9 mm, a width of not less than 7mm and a height of not less than 2.8 mm.
6. The multi-pin high-power surge protection device according to claim 1, wherein the bottom surface of the plastic package body is an actual soldering surface, and is soldered to a PCB.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020850945.3U CN211629087U (en) | 2020-05-20 | 2020-05-20 | Multi-pin high-power surge-proof device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020850945.3U CN211629087U (en) | 2020-05-20 | 2020-05-20 | Multi-pin high-power surge-proof device |
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| Publication Number | Publication Date |
|---|---|
| CN211629087U true CN211629087U (en) | 2020-10-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202020850945.3U Active CN211629087U (en) | 2020-05-20 | 2020-05-20 | Multi-pin high-power surge-proof device |
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| Country | Link |
|---|---|
| CN (1) | CN211629087U (en) |
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2020
- 2020-05-20 CN CN202020850945.3U patent/CN211629087U/en active Active
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