CN211479791U - Thin film resistor structure - Google Patents
Thin film resistor structure Download PDFInfo
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- CN211479791U CN211479791U CN202020338177.3U CN202020338177U CN211479791U CN 211479791 U CN211479791 U CN 211479791U CN 202020338177 U CN202020338177 U CN 202020338177U CN 211479791 U CN211479791 U CN 211479791U
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Abstract
The application discloses thin film resistor structure, this thin film resistor structure includes: the resistor layer is distributed on the surface of the insulating substrate; the insulating layer covers the resistance layer and reserves a through hole; and a metal electrode layer distributed on the insulating layer and connected to the resistive layer through the through-holes. The thin film resistor structure has small size and high resistance, and the resistance layer is covered by the insulating layer, so that the resistance layer is isolated from the external environment, and the reliability of the thin film resistor structure is improved.
Description
Technical Field
The application belongs to the technical field of thin film resistors, and particularly relates to a thin film resistor structure.
Background
The resistor is one of the basic components in the electronic industry, and the demand for miniaturization of the resistor volume is becoming more obvious as integrated circuits are developed along moore's law and electronic products are being miniaturized. The structure of a conventional sheet-like thin film resistor for wire bonding is shown in fig. 1, which has two electrodes 1 with low resistivity, generally not less than 0.15mm in width, a resistive thin film material 2 between the electrodes, and the thin film material is generally tantalum nitride, chrome silicon alloy, titanium nitride, polysilicon, etc. In order to improve the resistance, the structure can be designed into a strip structure. If the resistor length is only 0.6mm for small sizes, such as the 0201 model, about 50% of the area is occupied by the electrodes if the individual electrodes are 0.15mm wide. Therefore, the area of the resistance material of the existing thin film resistor is limited, and the producibility of the thin film resistor with small volume and high resistance value is restricted.
SUMMERY OF THE UTILITY MODEL
In view of the above-mentioned shortcomings or drawbacks of the prior art, the present application provides a thin film resistor structure.
In order to solve the technical problem, the application is realized by the following technical scheme:
the application provides a thin film resistor structure, including:
an insulating substrate, a dielectric layer and a dielectric layer,
the resistance layer is distributed on the surface of the insulating substrate;
the insulating layer covers the resistance layer and is reserved with a through hole;
and the metal electrode layer is distributed on the insulating layer and is connected with the resistance layer through the through hole.
Further, in the above thin film resistor structure, the resistive layer is disposed in a strip structure and wound on the insulating substrate in a serpentine shape.
Further, in the above thin film resistor structure, the two ends of the resistor in the resistor layer are wide strip-shaped structures relative to the middle portion thereof, and the width of the two ends is 25-40 um.
Further, in the above thin film resistor structure, the insulating substrate is made of aluminum nitride, aluminum oxide, silicon nitride, or quartz material.
Further, in the above thin film resistor structure, the resistance layer includes a tantalum nitride film, a chromium silicon film, a polysilicon film, a titanium dioxide film, or a zirconium dioxide film.
Further, in the above thin film resistor structure, the insulating layer includes a silicon dioxide film, a silicon nitride film, an aluminum oxide film, or an organic insulating resin film.
Further, in the above thin film resistor structure, the number of the through holes is at least two, and the through holes are used for exposing the connection portions of the resistance layer.
The application also provides a preparation method of the thin film resistor structure, and the preparation method comprises the following steps:
forming a resistance layer on the insulating substrate by adopting the processes of photoetching and plasma etching;
sputtering an insulating layer on the resistance layer by adopting a sputtering process;
utilizing photoetching and silicon dioxide wet etching processes to form at least two through holes in the insulating layer;
and covering the metal electrode layer in the insulating layer and the through hole by photoetching and metal layer stripping processes, and connecting the metal electrode layer with the resistance layer through the through hole.
Further, in the above manufacturing method, an aspect ratio of the resistor in the resistor layer is equal to or greater than 2000, and a resistance value is equal to or greater than 100K Ω.
Further, in the above manufacturing method, the two ends of the resistor in the resistor layer are wide strip-shaped structures relative to the middle portion thereof, and the width of the two ends is 25-40 um.
Compared with the prior art, the method has the following technical effects:
the thin film resistor structure has small size and high resistance, wherein the resistance layer is covered by the insulating layer, so that the resistance layer is isolated from the external environment, and the reliability of the thin film resistor structure is improved;
the resistance layer in the application is not limited to be distributed between the two electrodes, but is wound on the insulating substrate according to the snake shape, so that the length-width ratio can be greatly improved, the resistance value of the resistor is increased, and the volume of the resistor does not need to be additionally increased;
the metal electrode layer is connected with the resistance layer only through the through hole in the insulating layer, and other parts are distributed on the insulating layer; the metal electrode layer is arranged on the top of the structure, so that higher integration level is achieved;
according to the preparation method, a semiconductor film process is adopted, the film is formed firstly, and then the required pattern is formed by etching, so that the preparation method has the advantages of higher precision and reliability and suitability for large-scale mass production.
Drawings
Other features, objects and advantages of the present application will become more apparent upon reading of the following detailed description of non-limiting embodiments thereof, made with reference to the accompanying drawings in which:
FIG. 1: the structure schematic diagram of the existing routing film resistor;
FIG. 2: a schematic of a layered structure of a thin film resistor structure of the present application;
FIG. 3: a cross-sectional view of the thin film resistor structure of the present application;
FIG. 4: the application discloses a flow chart of a preparation method of a thin film resistor structure.
The resistor comprises a substrate 1, a resistor layer 2, an insulating layer 3 and a metal electrode layer 4.
Detailed Description
The conception, specific structure and technical effects of the present application will be further described in conjunction with the accompanying drawings to fully understand the purpose, characteristics and effects of the present application.
In one embodiment of the present application, as shown in fig. 2 and 3, a thin film resistor structure includes:
an insulating substrate 1 is provided on which a plurality of electrodes are formed,
a resistance layer 2 distributed on the surface of the insulating substrate 1;
an insulating layer 3 covering the resistive layer 2 and provided with a through hole;
and a metal electrode layer 4 which is distributed on the insulating layer 3 and connected to the resistive layer 2 through the through hole.
The thin film resistor structure of the embodiment has small size and large resistance, wherein the resistance layer 2 is covered by the insulating layer 3, so that the resistance layer 2 is isolated from the external environment, and the reliability of the thin film resistor structure is improved; the metal electrode layer 4 is connected with the resistance layer 2 only through a through hole in the insulating layer 3, other parts are distributed on the insulating layer 3, the electrode is led out through the through hole, the maximum current tolerance depends on the diameter of the size of the through hole, and the through hole is controllable in shape and size and high in reliability; and the metal electrode layer 4 of the application is arranged on the top of the structure, so that the integration level is higher.
In the present embodiment, the insulating substrate 1 includes, but is not limited to, one made of aluminum nitride, aluminum oxide, silicon nitride, or quartz material. Wherein, preferably, the unit size of the insulating substrate 1 is: the length is 0.6mm, the width is 0.3mm, and the above illustrates only one of the dimensions of the insulating substrate 1, which does not limit the scope of protection of the present application.
Further, the resistance layer 2 includes, but is not limited to, a tantalum nitride film, a chromium silicon film, a polysilicon film, a titanium dioxide film, or a zirconium dioxide film.
Further, in the present embodiment, the resistive layer 2 is provided in a strip structure and wound on the insulating substrate 1 in a serpentine shape. By the arrangement mode, the length-width ratio can be greatly improved, so that the resistance value of the resistor is increased, and the volume of the resistor does not need to be additionally increased.
Further, in the preparation method described below, the serpentine resistor is formed by using the processes of photolithography and plasma etching, and the length-width design optimization is performed to obtain at least an aspect ratio of 2000, that is, the designed resistance value of the resistor can reach at least 100K Ω.
The two ends of the resistor in the resistor layer 2 are in wide strip structures relative to the middle part of the resistor, the width of the two ends is 25-40um, and the contact area of the resistor can be increased through the design of the wide strip structures; further, the width is preferably 25 to 35 um; further, the width is preferably 20 to 30 um.
In the present embodiment, the insulating layer 3 includes, but is not limited to, a silicon oxide film, a silicon nitride film, an aluminum oxide film, or an organic insulating resin film.
Wherein the insulating layer 3 has a thickness of 5000A.
Furthermore, a through hole is formed at the position of the wide strip structure of the resistor at the two end parts by utilizing photoetching and silicon dioxide wet etching processes, and the resistor layer 2 and the metal electrode layer 4 are connected through the through hole, so that the connection reliability is high.
Wherein, the width of the through hole is preferably 20-30um, and more preferably 20-25 um.
The through holes can be arranged at two ends of the resistance layer 2 or at the head and tail parts of the resistance strip.
Further, the number of the through holes is at least two, and a plurality of through holes can be arranged to reduce contact resistance. Wherein the through holes are used for exposing the connecting parts of the resistive layer 2.
As shown in fig. 4, the present application further provides a method for manufacturing the thin film resistor structure, where the method includes the following steps:
the method comprises the following steps: forming a resistance layer 2 on an insulating substrate 1 by adopting the processes of photoetching and plasma etching;
the insulating substrate 1 includes, but is not limited to, one made of aluminum nitride, aluminum oxide, silicon nitride or quartz material. Wherein, preferably, the unit size of the insulating substrate 1 is: the length is 0.6mm, the width is 0.3mm, and the above illustrates only one of the dimensions of the insulating substrate 1, which does not limit the scope of protection of the present application.
The resistance layer 2 includes, but is not limited to, a tantalum nitride film, a chromium silicon film, a polysilicon film, a titanium dioxide film, or a zirconium dioxide film.
Wherein, the resistance layer 2 is arranged in a strip structure and is coiled on the insulating substrate 1 according to a snake shape. By the arrangement mode, the length-width ratio can be greatly improved, so that the resistance value of the resistor is increased, and the volume of the resistor does not need to be additionally increased.
The snake-shaped resistor is formed by adopting the processes of photoetching and plasma etching, and the length-width ratio of 2000 can be at least obtained through the optimization of length-width design, namely the resistance value of the designed resistor can at least reach 100K omega.
The two ends of the resistor in the resistor layer 2 are in wide strip structures relative to the middle part of the resistor, the width of the two ends is 25-40um, and the contact area of the resistor can be increased through the design of the wide strip structures; further, the width is preferably 25 to 35 um; further, the width is preferably 20 to 30 um.
Step two: sputtering an insulating layer 3 on the resistance layer 2 by adopting a sputtering process;
the insulating layer 3 includes, but is not limited to, a silicon oxide film, a silicon nitride film, an alumina film, or an organic insulating resin film. Wherein the insulating layer 3 has a thickness of 5000A.
Step three: utilizing photoetching and silicon dioxide wet etching processes to form at least two through holes in the insulating layer 3;
and a through hole is formed at the position of the wide strip-shaped structure of the resistor at the two end parts by utilizing photoetching and silicon dioxide wet etching processes, and the resistor layer 2 and the metal electrode layer 4 are connected through the through hole, so that the connection reliability is high.
Wherein, the width of the through hole is preferably 20-30um, and more preferably 20-25 um.
The through holes can be arranged at two ends of the resistance layer 2 or at the head and tail parts of the resistance strip.
Further, the number of the through holes is at least two, and a plurality of through holes can be arranged to reduce contact resistance. Wherein the through holes are used for exposing the connecting parts of the resistive layer 2.
Step four: and covering the metal electrode layer 4 in the insulating layer 3 and the through hole by photoetching and metal layer stripping processes, and connecting the metal electrode layer 4 with the resistance layer 2 through the through hole.
The metal electrode layer 4 is connected with the resistance layer 2 only through a through hole in the insulating layer 3, other parts are distributed on the insulating layer 3, the electrode is led out through the through hole, the maximum current tolerance depends on the diameter of the size of the through hole, and the through hole is controllable in shape and size and high in reliability. The thickness of metal electrode layer 4 is 1um, and for the convenience routing use, this metal electrode layer 4's width is 180um, and length is 280 um.
The thin film resistor structure has small size and high resistance, wherein the resistance layer is covered by the insulating layer, so that the resistance layer is isolated from the external environment, and the reliability of the thin film resistor structure is improved; the resistance layer in the application is not limited to be distributed between the two electrodes, but is wound on the insulating substrate according to the snake shape, so that the length-width ratio can be greatly improved, the resistance value of the resistor is increased, and the volume of the resistor does not need to be additionally increased; the metal electrode layer is connected with the resistance layer only through the through hole in the insulating layer, and other parts are distributed on the insulating layer; the metal electrode layer is arranged on the top of the structure, so that higher integration level is achieved; according to the preparation method, a semiconductor film process is adopted, the film is formed firstly, and then the required pattern is formed by etching, so that the preparation method has the advantages of higher precision and reliability and suitability for large-scale mass production.
The above embodiments are merely to illustrate the technical solutions of the present application and are not limitative, and the present application is described in detail with reference to preferred embodiments. It will be understood by those skilled in the art that various modifications and equivalent arrangements may be made in the present invention without departing from the spirit and scope of the present invention and shall be covered by the appended claims.
Claims (7)
1. A thin film resistor structure, comprising:
an insulating substrate, a dielectric layer and a dielectric layer,
the resistance layer is distributed on the surface of the insulating substrate;
the insulating layer covers the resistance layer and is reserved with a through hole;
and the metal electrode layer is distributed on the insulating layer and is connected with the resistance layer through the through hole.
2. The thin film resistor structure of claim 1, wherein said resistive layer is provided in a strip configuration and is wound on said insulating substrate in a serpentine pattern.
3. The thin film resistor structure of claim 2, wherein the resistor layer has a wide strip structure with two ends opposite to the middle part, and the two ends have a width of 25-40 um.
4. A thin film resistor structure according to claim 1, 2 or 3, characterized in that the insulating substrate is made of aluminum nitride, aluminum oxide, silicon nitride or quartz material.
5. The thin film resistor structure of claim 1, 2 or 3, wherein the resistive layer comprises a tantalum nitride film, a chromium silicon film, a polysilicon film, a titanium dioxide film or a zirconium dioxide film.
6. The thin film resistor structure of claim 1, wherein the insulating layer comprises a silicon oxide film, a silicon nitride film, an aluminum oxide film, or an organic insulating resin film.
7. The thin film resistor structure of claim 1, 2, 3 or 6, wherein the number of the through holes is at least two, wherein the through holes are used for exposing the connecting portions of the resistive layer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020338177.3U CN211479791U (en) | 2020-03-17 | 2020-03-17 | Thin film resistor structure |
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| CN202020338177.3U CN211479791U (en) | 2020-03-17 | 2020-03-17 | Thin film resistor structure |
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| CN211479791U true CN211479791U (en) | 2020-09-11 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112562946A (en) * | 2020-11-27 | 2021-03-26 | 浙江集迈科微电子有限公司 | Tantalum nitride film resistor and preparation method thereof |
| WO2022176963A1 (en) * | 2021-02-17 | 2022-08-25 | ローム株式会社 | Semiconductor device |
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2020
- 2020-03-17 CN CN202020338177.3U patent/CN211479791U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112562946A (en) * | 2020-11-27 | 2021-03-26 | 浙江集迈科微电子有限公司 | Tantalum nitride film resistor and preparation method thereof |
| WO2022176963A1 (en) * | 2021-02-17 | 2022-08-25 | ローム株式会社 | Semiconductor device |
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