CN210926059U - Quantum dot light emitting device - Google Patents
Quantum dot light emitting device Download PDFInfo
- Publication number
- CN210926059U CN210926059U CN201921655070.5U CN201921655070U CN210926059U CN 210926059 U CN210926059 U CN 210926059U CN 201921655070 U CN201921655070 U CN 201921655070U CN 210926059 U CN210926059 U CN 210926059U
- Authority
- CN
- China
- Prior art keywords
- quantum dot
- unit
- layer
- light
- led chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Led Device Packages (AREA)
Abstract
The utility model relates to a quantum dot illuminator, including base plate, LED chip, insulating layer, quantum dot layer and protective layer. The LED chip is arranged on the substrate and is an ultraviolet LED chip. The thermal-insulating layer is arranged on the outer surface of the LED chip. The quantum dot layer is arranged on the heat insulation layer. The quantum dot layer comprises a red quantum dot unit, an orange quantum dot unit, a yellow quantum dot unit, a green quantum dot unit, a cyan quantum dot unit and a blue quantum dot unit which are mutually independent. The protective layer is arranged on the quantum dot layer and coats the quantum dot layer, the heat insulation layer and the LED chip. The white light emitted by the quantum dot light-emitting device has the advantages of higher color rendering index, lower blue light intensity, wide spectrum range and proper color temperature, and is closer to natural light. In addition, the quantum dot light-emitting device has high luminous efficiency and long service life.
Description
Technical Field
The utility model relates to a light emitting device technical field especially relates to a quantum dot illuminator.
Background
An LED (Light Emitting Diode) is a solid semiconductor device, has the advantages of high brightness, low operating voltage, low power consumption, easy matching with an integrated circuit, simple driving, long service life, and the like, and has been widely used as a Light source in the field of lighting.
The existing white light LED device is mainly characterized in that yellow fluorescent powder capable of being excited by blue light is coated on a blue LED chip, the blue light emitted by the blue LED chip and yellow light emitted by the fluorescent powder are mixed to form white light, and the white light LED device has the defects of low color rendering index, high blue light intensity and high color temperature, and is easy to cause eye fatigue and damage retina health after long-time use.
SUMMERY OF THE UTILITY MODEL
Accordingly, there is a need for a quantum dot light emitting device with high color rendering index, low blue light intensity, color temperature close to natural light, and wide light emitting spectrum.
A quantum dot light-emitting device comprising:
a substrate;
the LED chip is arranged on the substrate and is an ultraviolet LED chip;
the heat insulation layer is arranged on the outer surface of the LED chip;
the quantum dot layer is arranged on the heat insulation layer and comprises a red quantum dot unit, an orange quantum dot unit, a yellow quantum dot unit, a green quantum dot unit, a cyan quantum dot unit and a blue quantum dot unit which are mutually independent; and
and the protective layer is arranged on the quantum dot layer and simultaneously coats the quantum dot layer, the heat insulation layer and the LED chip.
This quantum dot illuminator, the LED chip adopts the ultraviolet ray LED chip, and quantum dot unit that the quantum dot layer contains red orange yellow green blue 6 kinds of colours at least, the ultraviolet ray that utilizes the ultraviolet ray LED chip to send is as the excitation energy on quantum dot layer, because the energy of ultraviolet light is high, so can guarantee the utilization ratio and the luminous efficacy of the quantum dot of red orange yellow green blue 6 kinds of colours effectively, make the mixed back of light that quantum dot unit of each kind of quantum dot layer sent, the color rendering index of the white light that sends is higher, blue light intensity is lower, the spectral range is wide, the colour temperature is suitable, the natural light is pressed close to more. In addition, the heat insulation layer can effectively avoid the heat of the LED chip from causing adverse effect on the quantum dot layer, and prolong the service life of the quantum dots; the protective layer can prevent external water and oxygen from invading the quantum dot layer and the LED chip and further has a heat dissipation effect, and the luminous efficiency and the service life of the quantum dot light-emitting device are improved.
In one embodiment, the heat insulation layer covers the whole outer surface of the LED chip; the quantum dot layer is also coated on the whole outer surface of the heat insulation layer.
In one embodiment, in the quantum dot layer, a red quantum dot unit, an orange quantum dot unit, a yellow quantum dot unit, a green quantum dot unit, a cyan quantum dot unit and a blue quantum dot unit form a structural unit, and the quantum dot units in the structural unit are distributed in the same row.
In one embodiment, in the quantum dot layer, a red quantum dot unit, an orange quantum dot unit, a yellow quantum dot unit, a green quantum dot unit, a cyan quantum dot unit and a blue quantum dot unit form a structural unit, and the quantum dot units in the structural unit are arranged in two rows and three columns.
In one embodiment, the LED chip further comprises a lens, and the lens cover is arranged on the LED chip coated with the protective layer and connected with the substrate.
In one embodiment, the lens is a hyperboloid lens.
In one embodiment, in the quantum dot layer, the number of structural units formed by one red quantum dot unit, one orange quantum dot unit, one yellow quantum dot unit, one green quantum dot unit, one cyan quantum dot unit and one blue quantum dot unit is at least two, and at least two structural units are respectively arranged corresponding to the two curved surfaces of the lens.
In one embodiment, the quantum dot layer further comprises a spacer unit for spacing each quantum dot unit, and the spacer unit is a transparent spacer unit.
In one embodiment, the thermal insulation layer is a silicone resin thermal insulation layer, an acrylic resin thermal insulation layer or an epoxy resin thermal insulation layer.
In one embodiment, the protective layer is an inorganic non-metallic material protective layer, a metal oxide protective layer, or a metal nitride protective layer.
Drawings
Fig. 1 is a schematic structural diagram of a quantum dot light-emitting device according to an embodiment;
FIG. 2 is a schematic cross-sectional view of the quantum dot light-emitting device shown in FIG. 1 without a lens;
FIG. 3 is a schematic cross-sectional view of a quantum dot light-emitting device without a lens according to yet another embodiment;
fig. 4 is a schematic top view of a quantum dot layer in the quantum dot light emitting device shown in fig. 1;
fig. 5 is a schematic top view illustrating a quantum dot layer in a quantum dot light emitting device according to yet another embodiment;
FIG. 6 is a graph showing an emission spectrum of the quantum dot light-emitting device shown in FIG. 1;
FIG. 7 is a spectrum of sunlight;
fig. 8 is a graph of the emission spectra of a conventional red-green quantum dot LED and a conventional yellow phosphor LED.
Detailed Description
In order to facilitate understanding of the present invention, the present invention will be described more fully hereinafter with reference to the accompanying drawings. The preferred embodiments of the present invention are shown in the drawings. The invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
Referring to fig. 1, an embodiment of the present invention provides a quantum dot light emitting device 100 according to an embodiment. The quantum dot light emitting device 100 includes a substrate 110, an LED chip 120, a thermal insulation layer 130, a quantum dot layer 140, and a protection layer 150.
The LED chip 120 is disposed on the substrate 110, and the LED chip 120 is an ultraviolet LED chip.
The thermal insulation layer 130 is disposed on an outer surface of the LED chip 120.
Quantum dot layer 140 is disposed on insulating layer 130. The quantum dot layer 140 includes a red quantum dot unit, an orange quantum dot unit, a yellow quantum dot unit, a green quantum dot unit, a cyan quantum dot unit, and a blue quantum dot unit, which are independent of each other.
The protection layer 150 is disposed on the quantum dot layer 140 and covers the quantum dot layer 140, the thermal insulation layer 130 and the LED chip 120.
This quantum dot light emitting device 100, LED chip 120 adopts the ultraviolet light LED chip, and quantum dot layer 130 contains the quantum dot unit of red orange yellow green blue 6 kinds of colours at least, the ultraviolet light that utilizes the ultraviolet light LED chip to send is as the excitation energy of quantum dot layer 140, because the energy of ultraviolet light is high, so can guarantee the utilization ratio and the luminous efficacy of the quantum dot of red orange yellow green blue 6 kinds of colours effectively, make the light that quantum dot layer 140 various colours quantum dot units sent mix the back, the color rendering index of the white light that sends is higher (display index 98), blue light intensity is lower, the spectral range is wide, the colour temperature is suitable (about 4000K-5000K), more press close to natural light. In addition, the thermal insulation layer 130 can effectively prevent the heat of the LED chip 120 from causing adverse effects on the quantum dot layer 140, and prolong the service life of the quantum dots; the protection layer 150 can block the quantum dot layer 140 and the LED chip 120 from being invaded by external water and oxygen, and further has a heat dissipation effect, which is beneficial to improving the light emitting efficiency and the service life of the quantum dot light emitting device 100.
The white light emitted by the quantum dot light emitting device 100 has a good natural light effect, does not cause eyestrain and does not damage the health of the retina, and can be called as a quantum dot natural light LED. The quantum dot light emitting device 100 may be a good lighting device emitting natural white light.
In some embodiments, the substrate 110 may be a ceramic substrate or a metal substrate. Further, the ceramic substrate is made of AlN or Al2O3、SiO、SiO2、Si3N4And SiON. Further, the metal substrate may be a copper metal substrate, an aluminum metal substrate, or a copper aluminum alloy substrate.
In some examples, the LED chip 120 is preferably flip-chip mounted on the substrate 110, so that the constraint of gold wires and die attach adhesives can be completely eliminated, and the LED chip 120 has a high thermal conductivity, a low thermal resistance, a high current endurance, a higher reliability, a higher luminous flux maintenance rate, and a longer service life.
Specifically, the connection of the substrate 110 and the LED chip 120 may be fixed by a solder paste pad.
Specifically, the wavelength of the ultraviolet light emitted from the LED chip 120 ranges from 360nm to 400 nm.
Referring to fig. 2, the thermal insulating layer 130 and the quantum dot layer 140 are sequentially stacked on the LED chip. The protection layer 150 is disposed on the quantum dot layer 140 and covers the quantum dot layer 140, the thermal insulation layer 130 and the LED chip 120, and the protection layer 150 is in direct contact with the quantum dot layer 140, the thermal insulation layer 130 and the LED chip 120.
Further, the thermal insulation layer 130 is a transparent thermal insulation layer, so that the intensity of ultraviolet light irradiated onto the quantum dot layer 140 is not affected.
Further, the material of the thermal insulation layer 130 may be a cured thermal insulation resin, for example, one or more selected from silicone resin, acrylic resin, and epoxy resin.
It is understood that the thermal insulation layer 130 may be formed on the outer surface of the LED chip by coating. Specifically, the coating means includes evaporation, coating, spin coating, dipping, inkjet printing, and laser printing.
Referring to fig. 3, in other embodiments, the thermal insulation layer 130 covers the entire outer surface of the LED chip 120. Further, the quantum dot layer 140 is also coated on the entire outer surface of the thermal insulation layer 130. In other words, the quantum dot layer 140 is provided not only on the upper surface of the heat insulating layer 130 but also on the side surface of the heat insulating layer 130. Thus, the protection layer 150 is disposed on the quantum dot layer 140 and covers the quantum dot layer 140, the thermal insulation layer 130 and the LED chip 120, and the protection layer 150 is in direct contact with the quantum dot layer 140, but not in direct contact with the thermal insulation layer 130 and the LED chip 120. The light emitted from the LED chip 120 can be emitted from various angles and absorbed by the quantum dot units of the quantum dot layer 140 located thereon, so that the light-emitting angle and the light-emitting effect can be increased.
Referring to fig. 4, in some embodiments, in the quantum dot layer 140, a red quantum dot unit, an orange quantum dot unit, a yellow quantum dot unit, a green quantum dot unit, a cyan quantum dot unit, and a blue quantum dot unit form a structural unit, and the quantum dot units in the structural unit are distributed in the same row.
It can be understood that the quantum dot units in the structural unit are distributed in the same row, and the specific color sequence can be adjusted as needed, as shown in fig. 4, which is only a specific example. Wherein B represents blue, C represents cyan, G represents green, Y represents yellow, O represents orange, and R represents red. Specifically, in the present example, the wavelengths are arranged in a manner of sequentially increasing or decreasing.
It can be understood that the wavelength range of the red quantum dots is 610nm-640 nm; the wavelength range of the orange quantum dots is 570nm-600 nm; the wavelength range of the yellow quantum dots is 540nm-570 nm; the wavelength range of the green quantum dots is 500nm-530 nm; the wavelength range of the cyan quantum dots is 470nm-500 nm; the wavelength range of the blue quantum dots is 440nm-460 nm. After ultraviolet light emitted by the LED chip is incident on the quantum dot layer 140, red, orange, yellow, green, cyan, and blue quantum dots in the quantum dot layer 140 are excited to emit red light, orange light, yellow light, green light, cyan light, and blue light, respectively, and the six colors of light are mixed to form white light.
It is understood that each quantum dot unit can be formed by ink-jet printing.
It is understood that the quantum dot layer 140 may further include quantum dot units of any color other than the above-mentioned red, orange, yellow, green, cyan and blue 6-color quantum dot units according to different requirements. The quantum dots have quantum size effect and adjustable wavelength, so that the quantum dots with any color corresponding to any wavelength can be obtained, and the more the colors of the quantum dots are, the closer the white light emitted after mixing is to the natural light. The quantum dot materials in the quantum dot units are commercially available. Further, the quantum dot material may be selected from group VI-II, group III-V, group IV-VI quantum dots, such as, but not limited to, CdSe, CdS, CdTe, ZnSe, ZnTe, PbSe, PbTe, InP, InAs, InSb, GaAs, GaP, CuInS2、AgInS2Core-like, core/shell quantum dots and related ternary, quaternary, carbon quantum dots, perovskite quantum dots, and the like.
The quantum dot units with different colors in the quantum dot layer 140 are separated from each other, so that mutual influence among quantum dot materials is effectively reduced, mutual absorption of various color lights when the quantum dots are mixed is effectively avoided, especially absorption of light emitted by the quantum dot material with a long emission wavelength to the quantum dot material with a short emission wavelength is effectively avoided, and further, the utilization rate and the luminous efficiency of the quantum dots are greatly improved. The quantum dot layer 140 further includes a spacer unit (not shown) for spacing the quantum dot units.
In some examples, the spacer is made of an organic resin. In some examples, the spacer unit is a transparent spacer unit, and in this case, the material of the spacer unit may be selected from silicone materials, which have good high light transmittance, high temperature resistance, moisture resistance, and low thermal conductivity, and thus can effectively protect the quantum dots from high temperature and high humidity, so as to prevent the quantum dots from being affected by moisture and heat failure.
Referring to fig. 5, in other embodiments, in the quantum dot layer 140, a red quantum dot unit, an orange quantum dot unit, a yellow quantum dot unit, a green quantum dot unit, a cyan quantum dot unit, and a blue quantum dot unit form a structural unit, and the quantum dot units in the structural unit are arranged in two rows and three columns. The structural unit adopts two rows of three columns to arrange the mode and can make the quantum dot unit of 6 kinds of colours of red, orange, yellow, green and blue more concentrate, and then improves the colour mixture effect for white light is close to the natural light more. The arrangement of colors in the structural unit can also be set according to actual needs, and as shown in fig. 5, this is only a specific example.
It is understood that the number of the structural units may be one or more.
It is understood that in the example as shown in fig. 4 or fig. 5, the quantum dot units are all rectangular in shape, but are not limited thereto, and may also be polygonal such as circular, concentric circular, triangular, quadrilateral, and so on. The dosage of the 6 color quantum dot units is not required, and can be the same or different.
Referring to fig. 1, in some embodiments, the qd-LED device 100 further includes a lens 160, and the lens 160 is disposed on the LED chip 120 covered with the protective layer 150 and connected to the substrate 110.
In one example, the lens 160 is a hyperboloid lens, which can enlarge the light-emitting angle of the light.
Further, the number of the structural units is at least two, and at least two structural units are respectively arranged corresponding to the two curved surfaces of the lens 160. Thus, the structural units of the quantum dot layer 140 and the lens 160 are correspondingly arranged, so that the light emitting effect can be further improved and the light emitting angle can be enlarged.
Further, the material of the lens 160 is polymethyl methacrylate. Specifically, the lens 160 and the substrate 110 may be fixed by UV glue.
In some embodiments, the material of the protection layer 150 is selected from one or more of an inorganic non-metallic material, a metal oxide and a metal nitride. Further, the protection layer 150 is an inorganic non-metal protection layer, a metal oxide protection layer, or a metal nitride protection layer.
Preferably, the material of the protection layer 150 is selected from silicon dioxide (SiO)2) Aluminum nitride (AIN), aluminum nitride silicon nitride composite (aluminum silicon nitride, SiAlN) and aluminum oxide (Al)2O3) One or more of the materials are low water and oxygen permeability materials. Further, the protective layer 150 is a silicon dioxide protective layer, an aluminum nitride protective layer, an aluminum silicon nitride protective layer, or an aluminum oxide protective layer.
FIG. 6 is a graph showing an emission spectrum of the quantum dot light-emitting device shown in FIG. 1; FIG. 7 is a spectrum of sunlight; fig. 8 is a graph of emission spectra of a conventional red-green quantum dot LED and a conventional yellow phosphor LED, which are shown in (1) and (2) of fig. 8, respectively. The structure of the conventional yellow phosphor LED is as described in the background art. The structure of the traditional red-green quantum dot LED is different from that of the traditional yellow fluorescent powder LED in that red-green quantum dot materials are adopted to replace the traditional fluorescent powder; compared with the traditional yellow fluorescent powder LED, the color rendering index of the traditional red-green quantum dot LED is improved, but the blue light intensity and the color temperature cannot be reduced; the red and green quantum dot material has narrow half-peak width, so that the range of a luminous spectrum is narrow, full-spectrum coverage cannot be formed, and the pursuit of people on the health degree and the comfort degree of white light is difficult to meet.
The contrast can know, the utility model discloses a white light that quantum dot illuminator obtained, color rendering index can reach 98, and the colour temperature is 4000K-5000K, reduces blue light intensity, and wave spectrum covers whole visible light, has increased spectral range, can compare the natural light, and the vision that lets the people is more comfortable, is difficult to fatigue more for the illumination is more natural more healthy.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (10)
1. A quantum dot light-emitting device, comprising:
a substrate;
the LED chip is arranged on the substrate and is an ultraviolet LED chip;
the heat insulation layer is arranged on the outer surface of the LED chip;
the quantum dot layer is arranged on the heat insulation layer and comprises a red quantum dot unit, an orange quantum dot unit, a yellow quantum dot unit, a green quantum dot unit, a cyan quantum dot unit and a blue quantum dot unit which are mutually independent; and
and the protective layer is arranged on the quantum dot layer and simultaneously coats the quantum dot layer, the heat insulation layer and the LED chip.
2. The quantum dot light-emitting device according to claim 1, wherein the thermal insulation layer covers the entire outer surface of the LED chip; the quantum dot layer is also coated on the whole outer surface of the heat insulation layer.
3. The quantum dot light-emitting device according to claim 1, wherein in the quantum dot layer, a red quantum dot unit, an orange quantum dot unit, a yellow quantum dot unit, a green quantum dot unit, a cyan quantum dot unit, and a blue quantum dot unit constitute a structural unit, and the quantum dot units in the structural unit are distributed in the same row.
4. The quantum dot light-emitting device according to claim 1, wherein in the quantum dot layer, a red quantum dot unit, an orange quantum dot unit, a yellow quantum dot unit, a green quantum dot unit, a cyan quantum dot unit, and a blue quantum dot unit constitute a structural unit, and the quantum dot units in the structural unit are arranged in two rows and three columns.
5. The quantum dot light-emitting device according to any one of claims 1 to 4, further comprising a lens, wherein the lens cover is disposed on the LED chip coated with the protective layer and connected to the substrate.
6. A quantum dot light-emitting device according to claim 5, wherein the lens is a hyperboloid lens.
7. The quantum dot light-emitting device according to claim 6, wherein the number of structural units of one red quantum dot unit, one orange quantum dot unit, one yellow quantum dot unit, one green quantum dot unit, one cyan quantum dot unit, and one blue quantum dot unit in the quantum dot layer is at least two, and at least two of the structural units are provided corresponding to the two curved surfaces of the lens, respectively.
8. A quantum dot light-emitting device according to any of claims 1 to 4, wherein the quantum dot layer further comprises a spacer unit for spacing the quantum dot units, the spacer unit being a transparent spacer unit.
9. The quantum dot light-emitting device according to any one of claims 1 to 4, wherein the thermal insulation layer is a silicone resin thermal insulation layer, an acrylic resin thermal insulation layer, or an epoxy resin thermal insulation layer.
10. The quantum dot light-emitting device according to any one of claims 1 to 4, wherein the protective layer is an inorganic non-metallic material protective layer, a metal oxide protective layer, or a metal nitride protective layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921655070.5U CN210926059U (en) | 2019-09-30 | 2019-09-30 | Quantum dot light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921655070.5U CN210926059U (en) | 2019-09-30 | 2019-09-30 | Quantum dot light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210926059U true CN210926059U (en) | 2020-07-03 |
Family
ID=71366197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921655070.5U Expired - Fee Related CN210926059U (en) | 2019-09-30 | 2019-09-30 | Quantum dot light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210926059U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110707201A (en) * | 2019-09-30 | 2020-01-17 | 深圳市卓翼科技股份有限公司 | Quantum dot light emitting device |
-
2019
- 2019-09-30 CN CN201921655070.5U patent/CN210926059U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110707201A (en) * | 2019-09-30 | 2020-01-17 | 深圳市卓翼科技股份有限公司 | Quantum dot light emitting device |
| CN110707201B (en) * | 2019-09-30 | 2024-04-09 | 深圳市卓翼科技股份有限公司 | Quantum dot light-emitting device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4583348B2 (en) | Light emitting device | |
| US7791092B2 (en) | Multiple component solid state white light | |
| US10158054B1 (en) | LED lighting device | |
| US8598608B2 (en) | Light emitting device | |
| US7005667B2 (en) | Broad-spectrum A1(1-x-y)InyGaxN light emitting diodes and solid state white light emitting devices | |
| US8008850B2 (en) | Color temperature tunable white light emitting device | |
| JP3065258B2 (en) | Light emitting device and display device using the same | |
| JP6331389B2 (en) | Light emitting device | |
| JP5701502B2 (en) | Light emitting device | |
| US20140167599A1 (en) | Light-emitting module and lighting source including the same | |
| US20040012027A1 (en) | Saturated phosphor solid state emitter | |
| US6933535B2 (en) | Light emitting devices with enhanced luminous efficiency | |
| CN101996986A (en) | White light-emitting diode packages with tunable colour temperature | |
| CN102474932A (en) | White light electroluminescent devices with adjustable color temperature | |
| US11315908B2 (en) | LED package structure having improved brightness | |
| JP5082427B2 (en) | Light emitting device | |
| CN109478547A (en) | Display device | |
| JP2006190963A (en) | Light emitting diode and structure therefor | |
| CN114695627A (en) | LED module and lighting device | |
| JP2000216434A (en) | Light emitting diode and its forming method | |
| CN210926059U (en) | Quantum dot light emitting device | |
| CN102779814A (en) | Light emitting element capable of giving out white light and light mixing method of light emitting element | |
| CN110707201B (en) | Quantum dot light-emitting device | |
| JP2004363635A (en) | Light-emitting diode | |
| US9054278B2 (en) | Lighting apparatuses and driving methods regarding to light-emitting diodes |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200715 Address after: No.71, Xinhuan South Street, West District, Binhai New Area, Tianjin Patentee after: TIANJIN ZHUODA TECHNOLOGY DEVELOPMENT Co.,Ltd. Address before: 518051 Guangdong city of Shenzhen province Nanshan District Xili Hirayama Private Technology Industrial Park 5 Patentee before: SHENZHEN ZOWEE TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200703 Termination date: 20210930 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |