CN210916346U - Intelligent temperature control single crystal furnace for chip manufacturing - Google Patents
Intelligent temperature control single crystal furnace for chip manufacturing Download PDFInfo
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- CN210916346U CN210916346U CN201921231556.6U CN201921231556U CN210916346U CN 210916346 U CN210916346 U CN 210916346U CN 201921231556 U CN201921231556 U CN 201921231556U CN 210916346 U CN210916346 U CN 210916346U
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Abstract
The utility model discloses an intelligent temperature control single crystal furnace for chip manufacturing, which comprises a furnace chamber, a permanent magnetic field, a lower furnace chamber, an electrode, a rotating shaft inlet, a first motor, an upper furnace cover, an optical sensor, a temperature sensor and a second motor, wherein the permanent magnetic field is fixed at the left end and the right end of the furnace chamber, the lower furnace chamber is fixed at the lower end of the furnace chamber, the electrodes are vertically penetrated and fixed at the left part and the right part of the lower end of the lower furnace chamber, the rotating shaft inlet is arranged at the middle part of the lower end of the lower furnace chamber, the upper part of the first motor extends into the lower furnace chamber through the rotating shaft inlet, the upper furnace cover is fixed at the upper end of the furnace chamber, the optical sensor in the oblique inner direction is fixed at the right part of the upper furnace cover, the temperature sensor in the oblique inner direction is fixed at the left part of the upper end of the upper furnace cover, the second motor is arranged at the middle part of the upper end of the, greatly ensuring the production quality of the single crystal and improving the manufacturing efficiency.
Description
Technical Field
The utility model relates to a chip manufacture equipment technical field especially relates to an intelligence accuse temperature single crystal growing furnace for chip manufacturing.
Background
The single crystal furnace has the functions of melting semiconductor materials and pulling single crystals in chip manufacturing, provides a semiconductor crystal blank of the single crystal for subsequent semiconductor chip manufacturing, the diameter of the single crystal mainly determines whether the single crystal can be formed in the growth process, and the single crystal grows smoothly and has higher quality due to a thermal field with proper temperature distribution; if the temperature distribution of the thermal field is not reasonable, various defects are easily generated in the process of growing the single crystal, the quality is affected, and the single crystal cannot grow out due to the phenomenon of crystal transformation under serious conditions.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide an intelligence accuse temperature single crystal growing furnace for chip manufacturing to solve above-mentioned technical problem.
In order to realize the purpose, the utility model adopts the following technical scheme:
an intelligent temperature control single crystal furnace for chip manufacturing comprises a furnace chamber, a permanent magnetic field, a lower furnace chamber, electrodes, an inert gas discharge port, a rotating shaft inlet, a first motor, an upper furnace cover, an optical sensor, a temperature sensor, a second motor and an isolation valve, wherein the permanent magnetic field is fixed at the left end and the right end of the furnace chamber, the lower furnace chamber is fixed at the lower end of the furnace chamber, the electrodes vertically penetrate through the left part and the right part of the lower end of the lower furnace chamber, the inert gas discharge port in the vertical direction is formed in the left part and the right part of the lower end of the lower furnace chamber, the rotating shaft inlet in the vertical direction is formed in the middle of the lower end of the lower furnace chamber, the upper part of the first motor extends into the lower furnace chamber through the rotating shaft inlet, the upper furnace cover is fixed at the upper end of the furnace chamber, the optical sensor in the oblique inner direction is fixed at the right part of the upper end of the upper furnace cover, the temperature sensor in the oblique inner, and an isolation valve is fixed on the inner side of the lower part of the upper furnace cover.
On the basis of the technical scheme, the graphite heater in the vertical direction is fixed at the upper end of the electrode, the rotating shaft in the vertical direction is connected to the upper end of the first motor, the rotating base in the horizontal direction is fixed at the upper end of the rotating shaft, the crucible in the vertical direction is fixed at the upper end of the rotating base, the melt is placed inside the crucible, and the crystal in the vertical direction is placed inside the melt.
On the basis of the technical scheme, the lower end of the second motor is connected with a seed shaft in the vertical direction, a seed crystal clamping device in the vertical direction is fixed at the lower end of the seed shaft, and a seed crystal in the vertical direction is clamped at the lower end of the seed crystal clamping device.
On the basis of the technical scheme, the graphite heater, the rotating base and the crucible are all positioned in the furnace chamber.
On the basis of the technical scheme, the first motor, the optical sensor, the temperature sensor, the second motor and the graphite heater are all connected with control equipment.
Compared with the prior art, the utility model has the advantages of it is following: the temperature sensor continuously detects the temperature in the process of single crystal pulling and transmits information to the control equipment, and the control equipment controls the graphite heater to properly reduce the temperature and raise the temperature, so that the temperature of the thermal field of the single crystal furnace in the process of single crystal pulling is always in a proper level.
Drawings
Fig. 1 is a front view of the present invention.
Fig. 2 is a front internal cross-sectional view of the present invention.
In the figure: 1. the device comprises a furnace chamber, 2, a permanent magnetic field, 3, a lower furnace chamber, 4, an electrode, 5, an inert gas outlet 6, a rotating shaft inlet, 7, a first motor, 8, an upper furnace cover, 9, an optical sensor, 10, a temperature sensor, 11, a second motor, 12, an isolation valve, 13, a graphite heater, 14, a rotating shaft, 15, a rotating base, 16, a crucible, 17, a melt, 18, a crystal, 19, a seed shaft, 20, a seed crystal clamping device, 21 and a seed crystal.
Detailed Description
The invention is explained in further detail below with reference to the figures and the embodiments.
As shown in fig. 1-2, an intelligent temperature control single crystal furnace for chip manufacturing comprises a furnace chamber 1, a permanent magnetic field 2, a lower furnace chamber 3, electrodes 4, an inert gas outlet 5, a rotating shaft inlet 6, a first motor 7, an upper furnace cover 8, an optical sensor 9, a temperature sensor 10, a second motor 11 and an isolation valve 12, wherein the permanent magnetic field 2 is fixed at the left end and the right end of the furnace chamber 1, the lower furnace chamber 3 is fixed at the lower end of the furnace chamber 1, the electrodes 4 are vertically fixed at the left end and the right end of the lower furnace chamber 3 in a penetrating manner, the inert gas outlet 5 in the vertical direction is arranged at the left end and the right end of the lower furnace chamber 3, the rotating shaft inlet 6 in the vertical direction is arranged in the middle of the lower end of the lower furnace chamber 3, the upper part of the first motor 7 extends into the lower furnace chamber 3 through the rotating shaft inlet 6, the upper furnace cover 8 is fixed at the upper end of the furnace chamber 1, the optical sensor 9 in the, a temperature sensor 10 in an inclined inner direction is fixed at the left part of the upper end of the upper furnace cover 8, a second motor 11 in a vertical direction is installed in the middle of the upper end of the upper furnace cover 8, and an isolation valve 12 is fixed on the inner side of the lower part of the upper furnace cover 8.
The graphite heater 13 of vertical direction is fixed with to electrode 4 upper end, first motor 7 upper end is connected with the pivot 14 of vertical direction, the pivot 14 upper end is fixed with the rotating base 15 of horizontal direction, the rotating base 15 upper end is fixed with the crucible 16 of vertical direction, fuse-element 17 has been placed to crucible 16 inside, vertical direction's crystal 18 has been placed to fuse-element 17 inside.
The lower end of the second motor 11 is connected with a seed shaft 19 in the vertical direction, a seed crystal clamping device 20 in the vertical direction is fixed at the lower end of the seed shaft 19, and a seed crystal 21 in the vertical direction is clamped at the lower end of the seed crystal clamping device 20.
The graphite heater 13, the rotating base 15 and the crucible 16 are all positioned inside the furnace chamber 1.
The first motor 7, the optical sensor 9, the temperature sensor 10, the second motor 11 and the graphite heater 13 are all connected with a control device.
The utility model discloses a theory of operation: putting high-purity crystal raw materials into a crucible, melting the raw materials by high temperature generated by a graphite heater, then slightly cooling the molten silicon liquid to generate a certain supercooling degree, inserting a seed crystal fixed on a seed crystal shaft into the surface of the melt, slowly pulling the seed crystal upwards after the seed crystal is melted with the melt, so that the crystal can grow at the lower end of the seed crystal, by controlling the temperature of the thermal field and the crystal lifting speed, a single crystal column with a certain diameter and size is grown, and finally, when most of the silicon solution is crystallized, the crystal is gradually reduced to form a tail cone, the temperature sensor continuously detects the temperature and transmits information to the control equipment in the secondary process, and the control equipment controls the graphite heater to properly cool and heat so that the temperature of the thermal field in the single crystal pulling process is always in a proper level.
The foregoing is a preferred embodiment of the present invention, and for those skilled in the art to understand the teaching of the present invention, the changes, modifications, replacements and variations to the embodiments will still fall within the protection scope of the present invention without departing from the principle and spirit of the present invention.
Claims (5)
1. The utility model provides an intelligence accuse temperature single crystal growing furnace for chip manufacturing, includes furnace chamber (1), permanent magnetic field (2), lower furnace chamber (3), electrode (4), inert gas discharge port (5), pivot import (6), first motor (7), goes up bell (8), optical sensor (9), temperature-sensing ware (10), second motor (11), isolating valve (12), its characterized in that: the furnace chamber comprises a furnace chamber (1), a permanent magnetic field (2) is fixed at the left end and the right end of the furnace chamber (1), a lower furnace chamber (3) is fixed at the lower end of the furnace chamber (1), electrodes (4) vertically penetrate through and are fixed at the left end and the right end of the lower furnace chamber (3), an inert gas outlet (5) in the vertical direction is opened at the left end and the right end of the lower furnace chamber (3), a rotating shaft inlet (6) in the vertical direction is opened at the middle part of the lower end of the lower furnace chamber (3), the upper part of a first motor (7) extends into the lower furnace chamber (3) through the rotating shaft inlet (6), an upper furnace cover (8) is fixed at the upper end of the furnace chamber (1), an optical sensor (9) in the oblique direction is fixed at the right part of the upper end of the upper furnace cover (8), a temperature sensor (10) in the oblique direction is fixed at the left part of the upper end of the, an isolation valve (12) is fixed on the inner side of the lower part of the upper furnace cover (8).
2. The intelligent temperature-controlled single crystal furnace for chip manufacturing according to claim 1, wherein: electrode (4) upper end is fixed with graphite heater (13) of vertical direction, first motor (7) upper end is connected with pivot (14) of vertical direction, pivot (14) upper end is fixed with rotating base (15) of horizontal direction, rotating base (15) upper end is fixed with crucible (16) of vertical direction, fuse-element (17) have been placed to crucible (16) inside, the crystal (18) of vertical direction have been placed to fuse-element (17) inside.
3. The intelligent temperature-controlled single crystal furnace for chip manufacturing according to claim 1, wherein: the lower end of the second motor (11) is connected with a seed shaft (19) in the vertical direction, a seed crystal clamping device (20) in the vertical direction is fixed at the lower end of the seed shaft (19), and a seed crystal (21) in the vertical direction is clamped at the lower end of the seed crystal clamping device (20).
4. The intelligent temperature-controlled single crystal furnace for chip manufacturing according to claim 2, wherein: the graphite heater (13), the rotating base (15) and the crucible (16) are all positioned in the furnace chamber (1).
5. The intelligent temperature-controlled single crystal furnace for chip manufacturing according to claim 1, wherein: the first motor (7), the optical sensor (9), the temperature sensor (10), the second motor (11) and the graphite heater (13) are all connected with control equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921231556.6U CN210916346U (en) | 2019-08-01 | 2019-08-01 | Intelligent temperature control single crystal furnace for chip manufacturing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921231556.6U CN210916346U (en) | 2019-08-01 | 2019-08-01 | Intelligent temperature control single crystal furnace for chip manufacturing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210916346U true CN210916346U (en) | 2020-07-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921231556.6U Active CN210916346U (en) | 2019-08-01 | 2019-08-01 | Intelligent temperature control single crystal furnace for chip manufacturing |
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| Country | Link |
|---|---|
| CN (1) | CN210916346U (en) |
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2019
- 2019-08-01 CN CN201921231556.6U patent/CN210916346U/en active Active
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