CN210668407U

CN210668407U - High-voltage LED chip

Info

Publication number: CN210668407U
Application number: CN201922054341.8U
Authority: CN
Inventors: ***; 廖宗仁
Original assignee: Dongguan Bright Led Ellectronics Ltd
Current assignee: Dongguan Bright Led Ellectronics Ltd; Bright Led Electronics Corp
Priority date: 2019-11-25
Filing date: 2019-11-25
Publication date: 2020-06-02
Anticipated expiration: 2029-11-25

Abstract

The utility model discloses a high-voltage LED chip, which comprises a substrate and a plurality of light-emitting units arranged at intervals, wherein each light-emitting unit comprises an N-type semiconductor layer, a P-type semiconductor layer, a quantum well layer, a P electrode and an N electrode, the N-type semiconductor layer is arranged above the substrate, the P-type semiconductor layer is arranged above the N-type semiconductor layer, the quantum well layer is arranged between the P-type semiconductor layer and the N-type semiconductor layer, the P electrode is arranged above the P-type semiconductor layer, the N electrode is arranged below the N-type semiconductor layer, the lower end surface of the N electrode is contacted with the substrate, the cross sections of the N-type semiconductor layer, the quantum well layer and the P, and the surface and the side surface of the P-type semiconductor layer of the light-emitting unit, the side surfaces of the quantum well layer and the N-type semiconductor layer of the light-emitting unit, the side surface of the N pole of the light-emitting unit and the surface of the substrate between two adjacent light-emitting units are provided with reflecting insulating layers. The utility model discloses can improve the luminance of the light that high pressure LED chip sent, improve the luminous performance of LED lamp.

Description

High-voltage LED chip

Technical Field

The utility model relates to a semiconductor light emitting device technical field, in particular to high pressure LED chip.

Background

The LED illuminating lamp is an illuminating lamp made of a fourth generation green light source LED. The LED is called as a fourth generation illumination light source or a green light source, has the characteristics of energy conservation, environmental protection, long service life, small volume and the like, and can be widely applied to the fields of various indications, display, decoration, backlight sources, common illumination, urban night scenes and the like.

The conventional LED chip generally includes a substrate and a light emitting unit disposed on the substrate, wherein the light emitting unit includes an N-pole, a P-pole, an N-type semiconductor layer, a P-type semiconductor layer, and a quantum well layer, the P-type semiconductor layer is disposed above the N-type semiconductor layer, the quantum well layer is disposed between the P-type semiconductor layer and the N-type semiconductor layer, the N-pole is disposed on the N-type semiconductor layer, and the P-pole is disposed on the P-type semiconductor layer.

Disclosure of Invention

The to-be-solved technical problem of the utility model is, to the not enough among the above-mentioned prior art, provide a high pressure LED chip, its luminance that can improve the light that high pressure LED chip sent to improve the luminous performance of LED lamp.

In order to solve the technical problem, the technical scheme of the utility model is that:

a high-voltage LED chip comprises a substrate and a plurality of light-emitting units arranged at intervals, wherein each light-emitting unit comprises an N-type semiconductor layer, a P-type semiconductor layer, a quantum well layer, a P electrode and an N electrode, the N-type semiconductor layer is arranged above the substrate, the P-type semiconductor layer is arranged above the N-type semiconductor layer, the quantum well layer is arranged between the P-type semiconductor layer and the N-type semiconductor layer, the P electrode is arranged above the P-type semiconductor layer, the N electrode is arranged below the N-type semiconductor layer, the lower end face of the N electrode is in contact with the substrate, the cross sections of the N-type semiconductor layer, the quantum well layer and the P-type semiconductor layer are gradually reduced from bottom to top, and reflective insulating layers are arranged on the surface and the side face of the P-type semiconductor layer of each light-emitting unit, the side faces of the quantum well layer and the N-type semiconductor, the N electrode of the light-emitting unit is connected with the P electrode of the adjacent light-emitting unit through a metal conducting layer, and the metal conducting layer is arranged above the reflecting insulating layer.

Preferably, the reflective insulating layer is a DBR insulating layer.

Preferably, the N-type semiconductor layer is disposed on the substrate, and the N-type semiconductor layer is disposed on the substrate.

Preferably, the P-electrode of the light emitting cell is electrically connected to the leftmost N-electrode of the adjacent light emitting cell.

Preferably, the N-type semiconductor layer is an N-type gallium nitride layer.

Preferably, the P-type semiconductor layer is a P-type gallium nitride layer.

Preferably, the substrate is a sapphire substrate.

Preferably, the operating voltage is 6, 9, 12, 24, 32 or 64V.

The utility model has the advantages that: the N pole is arranged below the N-type semiconductor layer, so that the phenomenon of light loss caused by shielding of the N pole can be avoided, the brightness of light emitted by the high-voltage LED chip is improved, and the light emitting performance of the LED lamp is improved; the cross sections of the N-type semiconductor layer, the quantum well layer and the P-type semiconductor layer are gradually decreased from bottom to top, so that light loss is reduced, the brightness of light emitted by the high-voltage LED chip is further improved, the light emitting performance of the LED lamp is further improved, reflective insulating layers are arranged on the surface and the side face of the P-type semiconductor layer of each light emitting unit, the side faces of the quantum well layer and the N-type semiconductor layer of each light emitting unit, the side face of the N pole of each light emitting unit and the surface of the substrate between every two adjacent light emitting units, the light emitted by the light emitting units is reflected through the reflective insulating layers, the brightness of the light emitted by the high-voltage LED chip is further effectively improved, and the light emitting.

Drawings

Fig. 1 is an assembly structure diagram of an embodiment of the present invention.

In the figure: 1-substrate, 2-N type semiconductor layer, 3-P type semiconductor layer, 4-quantum well layer, 5-P electrode, 6-N electrode, 7-reflecting insulating layer and 8-metal conducting layer.

Detailed Description

The structure and operation of the present invention will be described in detail with reference to the accompanying drawings.

A high-voltage LED chip comprises a substrate 1 and a plurality of light emitting units arranged at intervals, wherein each light emitting unit comprises an N-type semiconductor layer 2, a P-type semiconductor layer 3, a quantum well layer 4, a P electrode 5 and an N electrode 6, the N-type semiconductor layer 2 is arranged above the substrate 1, the P-type semiconductor layer 3 is arranged above the N-type semiconductor layer 2, the quantum well layer 4 is arranged between the P-type semiconductor layer 3 and the N-type semiconductor layer 2, the P electrode 5 is arranged above the P-type semiconductor layer 3, the N electrode 6 is arranged below the N-type semiconductor layer 2, the lower end face of the N electrode 6 is in contact with the substrate 1, the cross sections of the N-type semiconductor layer 2, the quantum well layer 4 and the P-type semiconductor layer 3 are gradually reduced from bottom to top, and the surface and the side face of the P-type semiconductor layer 3 of the light emitting unit, the quantum well, The N-electrode side of each light-emitting unit and the surface of the substrate 1 between two adjacent light-emitting units are respectively provided with a reflecting insulating layer 7, the N-electrode 6 of each light-emitting unit is connected with the P-electrode 5 of the adjacent light-emitting unit through a metal conducting layer 8, and the metal conducting layer 8 is arranged above the reflecting insulating layer 7.

Preferably, the reflective insulating layer 7 is a DBR insulating layer, so that the brightness of light emitted by the high-voltage LED chip is enhanced, and the light emitting performance of the high-voltage LED chip is effectively improved.

Preferably, the N-type semiconductor layer 2 has a plurality of N-electrodes 6, and the plurality of N-electrodes 6 are disposed at intervals below the N-type semiconductor layer.

Preferably, the P-electrode 5 of the light emitting cell is electrically connected to the leftmost N-electrode 6 of the adjacent light emitting cell.

Preferably, the N-type semiconductor layer 2 is an N-type gallium nitride layer.

Preferably, the P-type semiconductor layer 3 is a P-type gallium nitride layer.

Preferably, the substrate 1 is a sapphire substrate.

Preferably, the operating voltage of the high-voltage LED chip is 6, 9, 12, 24, 32 or 64V, and a user can adjust the operating voltage of the high-voltage LED chip according to the actual requirement.

The utility model has the advantages that: the N pole is arranged below the N-type semiconductor layer 2, so that the phenomenon of light loss caused by shielding of the N pole can be avoided, the brightness of light emitted by the high-voltage LED chip is improved, and the light emitting performance of the LED lamp is improved; the cross sections of the N-type semiconductor layer 2, the quantum well layer 4 and the P-type semiconductor layer 3 are gradually decreased from bottom to top, so that light loss is reduced, the brightness of light emitted by the high-voltage LED chip is further improved, the light emitting performance of the LED lamp is further improved, the surfaces and the side surfaces of the P-type semiconductor layer 3 of the light emitting unit, the side surfaces of the quantum well layer 4 and the N-type semiconductor layer 2 of the light emitting unit, the side surface of the N pole of the light emitting unit and the surface of the substrate 1 between every two adjacent light emitting units are respectively provided with the reflecting insulating layer 7, light emitted by the light emitting unit is reflected through the reflecting insulating layer 7, the brightness of light emitted by the high-voltage LED chip is further effectively improved, and the light emitting performance of.

The above, only the utility model discloses preferred embodiment, all be according to the utility model discloses a technical scheme does any slight modification, the equivalent change and the modification to above embodiment, all belong to the utility model discloses technical scheme's within range.

Claims

1. A high-voltage LED chip is characterized in that: the LED comprises a substrate and a plurality of light-emitting units arranged at intervals, wherein each light-emitting unit comprises an N-type semiconductor layer, a P-type semiconductor layer, a quantum well layer, a P electrode and an N electrode, the N-type semiconductor layer is arranged above the substrate, the P-type semiconductor layer is arranged above the N-type semiconductor layer, the quantum well layer is arranged between the P-type semiconductor layer and the N-type semiconductor layer, the P electrode is arranged above the P-type semiconductor layer, the N electrode is arranged below the N-type semiconductor layer, the lower end face of the N electrode is in contact with the substrate, the cross sections of the N-type semiconductor layer, the quantum well layer and the P-type semiconductor layer are gradually reduced from bottom to top, the surface and the side face of the P-type semiconductor layer of each light-emitting unit, the side faces of the quantum well layer and the N-type semiconductor layer of each light-, the N electrode of the light-emitting unit is connected with the P electrode of the adjacent light-emitting unit through a metal conducting layer, and the metal conducting layer is arranged above the reflecting insulating layer.

2. The high voltage LED chip of claim 1, wherein: the reflective insulating layer is a DBR insulating layer.

3. The high voltage LED chip of claim 1, wherein: the N electrodes are arranged below the N-type semiconductor layer at intervals.

4. A high voltage LED chip according to claim 3, wherein: the P electrode of the light emitting unit is electrically connected with the leftmost N electrode of the adjacent light emitting unit.

5. The high voltage LED chip of claim 1, wherein: the N-type semiconductor layer is an N-type gallium nitride layer.

6. The high voltage LED chip of claim 1, wherein: the P-type semiconductor layer is a P-type gallium nitride layer.

7. The high voltage LED chip of claim 1, wherein: the substrate is a sapphire substrate.

8. The high voltage LED chip of claim 1, wherein: the operating voltage is 6, 9, 12, 24, 32 or 64V.