CN210577011U - Semiconductor laser single-tube module - Google Patents
Semiconductor laser single-tube module Download PDFInfo
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- CN210577011U CN210577011U CN201921908416.8U CN201921908416U CN210577011U CN 210577011 U CN210577011 U CN 210577011U CN 201921908416 U CN201921908416 U CN 201921908416U CN 210577011 U CN210577011 U CN 210577011U
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- heat sink
- laser chip
- electrode
- pressing sheet
- sheet electrode
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model discloses a single-tube module of a semiconductor laser, which comprises an integrally formed laser chip, a transitional heat sink, a substrate heat sink, a first pressing plate electrode and a second pressing plate electrode, wherein the laser chip is welded on the transitional heat sink, the transitional heat sink is welded on the substrate heat sink, and the negative electrode of the laser chip is led out through a gold wire and is connected with the first pressing plate electrode; grooves and threaded holes are respectively formed in two sides of the base heat sink, the first pressing sheet electrode and the second pressing sheet electrode are arranged on the base heat sink through the threaded holes, and insulating gaskets are respectively arranged between the first pressing sheet electrode and the base heat sink and between the second pressing sheet electrode and the base heat sink; the single-tube module of the laser guide tube has the advantages of better heat dissipation capability of the laser chip, higher luminous efficiency of the laser chip, better stability of output power of the laser chip, flexibility of power supply and longer service life of the laser chip.
Description
Technical Field
The utility model belongs to the technical field of the semiconductor laser encapsulation technique and specifically relates to a semiconductor laser single tube module.
Background
The semiconductor laser, also called laser diode, is a laser using semiconductor material as working substance, has small volume, long service life, and can be pumped by adopting a simple current injection mode, and the working voltage and current thereof are compatible with integrated circuit, so that it can be integrated with the integrated circuit in a single chip, and can also directly modulate current with frequency up to GHz to obtain high-speed modulated laser output, etc., and the semiconductor diode laser is widely applied in the aspects of laser communication, laser lighting, optical gyro, laser printing, distance measurement and radar, etc. At present, a laser Chip single tube package is to weld a laser Chip On a ceramic transition heat sink or a substrate, which is called COS (Chip On Submount) for short; the laser chip packaging structure in the prior art is unscientific, and has the defects of poor heat dissipation, inconvenient power-up output, inconvenient fixation, unfavorable device design and the like.
SUMMERY OF THE UTILITY MODEL
The utility model discloses to prior art's not enough, provide a laser chip heat-sinking capability is better, laser chip luminous efficacy is higher, laser chip output power stability is better, add the longer lead laser ware single tube module of electric flexibility and laser chip life.
The utility model discloses a following technical scheme realizes:
a semiconductor laser single-tube module comprises an integrally formed laser chip, a transition heat sink, a substrate heat sink, a first pressing sheet electrode and a second pressing sheet electrode, wherein the laser chip is welded on the transition heat sink, the transition heat sink is welded on the substrate heat sink, and the cathode of the laser chip is led out through a gold wire and is connected with the first pressing sheet electrode; grooves and threaded holes are formed in two sides of the base heat sink respectively, the first pressing sheet electrode and the second pressing sheet electrode are arranged on the base heat sink through the threaded holes, and insulating gaskets are arranged between the first pressing sheet electrode and the base heat sink and between the second pressing sheet electrode and the base heat sink respectively.
Further, the transition heat sink is an aluminum nitride transition heat sink.
Further, the solder of the laser chip welded to the transition heat sink is gold-tin solder.
Further, the solder between the transitional heat sink and the base heat sink is indium solder.
Furthermore, the first pressing sheet electrode and the second pressing sheet electrode are made of conductive copper materials with gold-plated surfaces.
Further, the base heat sink is made of an oxygen-free copper material.
The utility model has the advantages of it is following:
1) the aluminum nitride transition heat sink has high thermal conductivity and fast heat dissipation, the aluminum nitride is welded to the substrate heat sink, the waste heat of the laser chip is conducted to the substrate heat sink through the aluminum nitride heat, the redundant waste heat is discharged in time, the stability of the laser single tube is facilitated, and the service life of the laser single tube is prolonged;
2) the lower surface of the tabletting electrode is provided with an insulating gasket which is fixed by screws, and the contact end of the electrode is pressed on the aluminum nitride for conducting electricity, so that the tabletting electrode has low cost, the single tube is convenient to power up, and the use is convenient;
3) the left and right grooves are arranged on the substrate heat sink and used for preventing the solder from melting and overflowing to form tin beads to influence electrode contact, and the overflowing redundant solder flows into the grooves;
4) the substrate heat sink material is oxygen-free copper, waste heat of the laser chip is conducted to the substrate heat sink through aluminum nitride heat, and redundant waste heat is discharged in time, so that the stability of the laser single tube is facilitated, and the service life of the laser single tube is prolonged;
5) the base heat sink is provided with a threaded hole, so that the device is convenient to mount and flexible to apply.
Drawings
Fig. 1 is a schematic top view of a single-tube module of a semiconductor laser according to the present invention;
fig. 2 is a schematic front view structure diagram of a single-tube module of the semiconductor laser of the present invention;
fig. 3 is a schematic diagram of a first pressing plate electrode of the semiconductor laser single-tube module of the present invention.
In the figure: 1. a laser chip; 2. an aluminum nitride transition heat sink; 3. a groove; 4. gold thread; 5. a first sheeting electrode; 6. a base heat sink; 7. a threaded hole; 8. an insulating spacer; 9. a second sheet electrode.
Detailed Description
The technical solution of the present invention will be further described below with reference to the accompanying drawings, and it is obvious that the embodiments described herein are only a part of the embodiments of the present invention, and not all embodiments.
Referring to fig. 1 to 3, in the present embodiment, a semiconductor laser single-tube module and a packaging process thereof includes a laser chip 1 and an aluminum nitride transition heat sink 2, the laser chip 1 is soldered to the aluminum nitride transition heat sink by a chip mounter or a reflow furnace, the solder used is gold-tin solder, the substrate heat sink 6 is made of a heat-conducting metal material, two grooves 3 are formed on the surface of the substrate heat sink 6, the grooves prevent overflow of the excessive solder when the solder is melted, the aluminum nitride transition heat sink is placed into the reflow furnace by a specific fixture and soldered to the substrate heat sink 6, the solder used is indium solder, a gold wire 4 is connected to the negative electrode of the laser chip 1 by a gold wire ball soldering machine, the gold wire has good conductivity, an insulating spacer presser plate 8 is placed below a first presser plate electrode 5, a screw is fixed to the electrode by a screw hole 7, the electrode contact end of the presser plate electrode is pressed on the aluminum nitride transition heat, the tabletting electrode is led out of the negative end of the laser chip; an insulating gasket 8 is arranged below the second pressed sheet electrode 9, the second pressed sheet electrode 9 is fixed through a screw hole 7, the electrode contact end is pressed on the aluminum nitride transition heat sink 2, the laser chip positive end is led out of the second pressed sheet electrode, and the first pressed sheet electrode 5 and the second pressed sheet electrode 9 are made of copper surface gold-plated conductive materials.
The present embodiment is only for illustrating the basic principle and characteristics of the present invention, and the present invention is not limited by the above embodiments, and the present invention may be modified and changed without departing from the spirit and scope of the present invention, and the modifications and changes are all within the protection scope of the present invention.
Claims (6)
1. A semiconductor laser single-tube module is characterized by comprising a laser chip, a transition heat sink, a substrate heat sink, a first pressing sheet electrode and a second pressing sheet electrode which are integrally formed, wherein the laser chip is welded on the transition heat sink, the transition heat sink is welded on the substrate heat sink, and the cathode of the laser chip is led out through a gold wire and is connected with the first pressing sheet electrode; grooves and threaded holes are formed in two sides of the base heat sink respectively, the first pressing sheet electrode and the second pressing sheet electrode are arranged on the base heat sink through the threaded holes, and insulating gaskets are arranged between the first pressing sheet electrode and the base heat sink and between the second pressing sheet electrode and the base heat sink respectively.
2. The semiconductor laser single-tube module as claimed in claim 1, wherein said submount is an aluminum nitride submount.
3. The semiconductor laser single-tube module as claimed in claim 1, wherein the solder used to solder the laser chip to the submount is gold-tin solder.
4. The semiconductor laser single-tube module as claimed in claim 1, wherein the solder between the submount and the base heatsink is indium solder.
5. The semiconductor laser diode module as claimed in claim 1, wherein the first pad electrode and the second pad electrode are made of conductive copper material with gold plated surface.
6. The semiconductor laser single-tube module as claimed in claim 1, wherein said base heatsink is of an oxygen-free copper material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921908416.8U CN210577011U (en) | 2019-11-07 | 2019-11-07 | Semiconductor laser single-tube module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921908416.8U CN210577011U (en) | 2019-11-07 | 2019-11-07 | Semiconductor laser single-tube module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210577011U true CN210577011U (en) | 2020-05-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921908416.8U Active CN210577011U (en) | 2019-11-07 | 2019-11-07 | Semiconductor laser single-tube module |
Country Status (1)
| Country | Link |
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| CN (1) | CN210577011U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114552370A (en) * | 2022-02-21 | 2022-05-27 | 桂林市啄木鸟医疗器械有限公司 | Semiconductor laser and method for manufacturing semiconductor laser |
-
2019
- 2019-11-07 CN CN201921908416.8U patent/CN210577011U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114552370A (en) * | 2022-02-21 | 2022-05-27 | 桂林市啄木鸟医疗器械有限公司 | Semiconductor laser and method for manufacturing semiconductor laser |
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