CN210490451U

CN210490451U - IPM protection system for flywheel energy storage device

Info

Publication number: CN210490451U
Application number: CN201921506194.7U
Authority: CN
Inventors: 王聪; 李海超; 谢洪生; 程祥; 韩星; 高忠瑶
Original assignee: Shenyang Vycon New Energy Technology Co ltd
Current assignee: Shenyang Vycon New Energy Technology Co ltd
Priority date: 2019-09-10
Filing date: 2019-09-10
Publication date: 2020-05-08
Anticipated expiration: 2029-09-10

Abstract

The utility model relates to an IPM protection circuit technical field, concretely relates to an IPM protection system for flywheel energy memory, this IPM protection system includes: the circuit driver is respectively connected with the comparator, the IPM unit and the signal generating unit, the comparator outputs a turn-off signal according to output signals of the short-circuit protection unit, the over-temperature protection unit and the over-current protection unit, and the circuit driver controls whether the first pulse signal and the second pulse signal are transmitted to the IPM unit or not according to the turn-off signal. The IPM protection system is composed of hardware, and compared with a system combining software and hardware, the IPM protection system simplifies the system structure, reduces the system development difficulty, improves the safety and the accuracy of the system, and obviously improves the information processing efficiency.

Description

IPM protection system for flywheel energy storage device

Technical Field

The utility model relates to an IPM protection circuit technical field, concretely relates to IPM protection system for flywheel energy memory.

Background

IPM (intelligent power module) is an advanced new type of power switching device, which has the advantages of GTR (large power transistor) high current density, low saturation voltage and high voltage resistance, as well as the advantages of MOSFET (field effect transistor) high input impedance, high switching frequency and low driving power. Logic, control, detection and protection circuits are integrated in the IPM, the IPM is convenient to use and wide in application range, the size and the development time of a system are reduced, the reliability of the system is greatly enhanced, the IPM is suitable for the development direction of the current power devices, such as modularization, recombination and Power Integrated Circuit (PIC), and the IPM draws more and more extensive attention in the field of power electronics.

The IPM is taken as an important component of a control system, and the handling and protection of the abnormal working state of the IPM are particularly paid attention to in the using process, but the current protection circuit is implemented by sampling the voltage of a direct current bus, the temperature and current signals in the IPM unit and transmitting the signals to a main controller MCU (microprogrammed control unit), programming the MCU, comparing and analyzing the sampled data, and further judging whether the circuit has over-current, over-temperature and other conditions, and if the over-current, over-temperature and other conditions occur, the MCU sends a blocking signal. The method needs the combination of software and hardware, increases the difficulty and workload of development, and increases the cost because the price of the MCU is higher than that of other electronic components.

In view of the above, it is an urgent technical problem in the art to provide a new IPM protection system for flywheel energy storage device to overcome the above drawbacks of the prior art.

Disclosure of Invention

An object of the utility model is to provide an IPM protection system for flywheel energy memory to the above-mentioned defect of prior art.

The purpose of the utility model can be realized by the following technical measures:

the embodiment of the utility model provides an IPM protection system for flywheel energy memory, this IPM protection system includes: the system comprises a signal generating unit, an IPM unit, a short-circuit protection unit, an over-temperature protection unit, an over-current protection unit, a comparator and a line driver;

the signal generating unit is used for generating and outputting a first pulse signal and a second pulse signal, and a first IGBT assembly and a second IGBT assembly are arranged in the IPM unit;

the input end of the short-circuit protection unit is respectively connected with the IPM unit and the signal generation unit, the output end of the short-circuit protection unit is connected with the comparator, and the short-circuit protection unit collects a gate-level voltage signal of the first IGBT assembly, a gate-level voltage signal of the second IGBT assembly, the first pulse signal and the second pulse signal and outputs a short-circuit protection signal to the comparator;

the input end of the over-temperature protection unit is connected with the IPM unit, the output end of the over-temperature protection unit is connected with the comparator, and the over-temperature protection unit acquires the temperature of the first IGBT assembly and the temperature of the second IGBT assembly and outputs an over-temperature protection signal to the comparator;

the input end of the over-current protection unit is connected with the IPM unit, the output end of the over-current protection unit is connected with the comparator, and the over-current protection unit collects a current signal flowing through the first IGBT assembly in the IPM unit and a current signal flowing through the second IGBT assembly in the IPM unit and outputs an over-current protection signal to the comparator;

the circuit driver is respectively connected with the comparator, the IPM unit and the signal generating unit, when the short-circuit protection signal, the over-temperature protection signal and the over-current protection signal are simultaneously in a low level state, a turn-off signal output by the comparator is in a low level state, the circuit driver controls the first pulse signal and the second pulse signal to pass through and be transmitted to the IPM unit, otherwise, the turn-off signal output by the comparator is in a high level state, and the circuit driver controls the first pulse signal and the second pulse signal to be blocked from being transmitted to the IPM unit.

According to the utility model discloses an embodiment, the line driver includes signal input pin, enable pin and signal output pin, enable pin with the comparator is connected, input pin with the signal generation unit is connected, output pin with the IPM unit is connected, works as when the shut-off signal is in low level state, first pulse signal and second pulse signal pass through enable pin transmits the IPM unit, works as when the shut-off signal is in high level state, enable pin blocks first pulse signal and second pulse signal transmit the IPM unit.

According to an embodiment of the utility model, the short-circuit protection unit includes the short-circuit protection circuit, locates two first voltage sensor on the first IGBT subassembly and locate two second voltage sensor on the second IGBT subassembly, first voltage sensor with second voltage sensor respectively with the short-circuit protection circuit is connected, the gate level voltage signal of first IGBT subassembly includes the last gate level voltage signal of first IGBT subassembly and the lower gate level voltage signal of first IGBT subassembly, the gate level voltage signal of second IGBT subassembly includes the last gate level voltage signal of second IGBT subassembly and the lower gate level voltage signal of second IGBT subassembly, two first voltage sensor is used for gathering respectively the last gate level voltage signal of first IGBT subassembly with the lower gate level voltage signal of first IGBT subassembly, two second voltage sensor is used for gathering respectively the last gate level voltage signal of second IGBT subassembly with the lower gate level voltage signal of second IGBT subassembly A signal.

According to the utility model discloses an embodiment, short-circuit protection circuit includes: the first signal input circuit module, the first signal comparison circuit module and the first signal output circuit module are connected in sequence, the first signal input circuit module is respectively connected with the first voltage sensor, the second voltage sensor and the signal generation unit, and the first signal output module is connected with the comparator; the first signal comparison circuit module comprises a first AND gate logic gate chip, a second AND gate logic gate chip, a third AND gate logic gate chip and an OR gate logic gate chip, wherein the input end of the OR gate logic gate chip is respectively connected with the output end of the first AND gate logic gate chip, the output end of the second AND gate logic gate chip and the output end of the third AND gate logic gate chip, the output end of the OR gate logic gate chip is connected with the first signal output circuit module, the first AND gate logic gate chip outputs a first level signal according to the first pulse signal and the second pulse signal, the second AND gate logic gate chip outputs a second level signal according to the upper gate level voltage signal of the first IGBT component and the lower gate level voltage signal of the first IGBT component, and the third AND gate logic gate chip outputs a third level signal according to the upper gate level voltage signal of the second IGBT component and the lower gate level voltage signal of the second IGBT component, the OR gate logic gate chip outputs a fourth level signal to the first signal output circuit module according to the first level signal, the second level signal and the third level signal; and the first signal output circuit module outputs the short-circuit protection signal to the comparator according to the fourth level signal.

According to the utility model discloses an embodiment, the excess temperature protection unit includes excess temperature protection circuit, locates first temperature sensor on the first IGBT subassembly with locate second temperature sensor on the second IGBT subassembly, first temperature sensor with second temperature sensor respectively with the excess temperature protection circuit is connected, the excess temperature protection circuit with the comparator is connected, first temperature sensor is used for gathering the temperature of first IGBT subassembly, second temperature sensor is used for gathering the temperature of second IGBT subassembly, the excess temperature protection circuit basis the temperature of first IGBT subassembly, the temperature output excess temperature protection signal of second IGBT subassembly give the comparator.

According to the utility model discloses an embodiment, the excess temperature protection circuit includes: a second signal input circuit module, a second signal comparison circuit module and a second signal output circuit module connected in sequence, wherein the second signal input circuit module includes a first comparison chip, a first voltage division circuit and a second voltage division circuit, one end of the first voltage division circuit is connected with the first temperature sensor, the other end of the first voltage division circuit is connected with the negative input end of the first comparison chip, one end of the second voltage division circuit is connected with the second temperature sensor, the other end of the second voltage division circuit is connected with the positive input end of the first comparison chip, the output end of the first comparison chip is connected with the second signal comparison circuit module, the first voltage division circuit outputs a first voltage value corresponding to the temperature of the first IGBT component, the second voltage division circuit outputs a second voltage value corresponding to the temperature of the second IGBT component, the first comparison chip collects and compares the first voltage value and the second voltage value, the smaller voltage value of the first voltage value and the second voltage value is used as a first input voltage value and is transmitted to the second signal comparison circuit module, the second signal comparison circuit module compares the first input voltage value with a preset over-temperature voltage value, and the second signal output circuit module outputs an over-temperature protection signal to the comparator according to a comparison result.

According to the utility model discloses an embodiment, second signal input circuit module is still including locating the first analog switch of the output of first comparison chip, first analog switch include with the first signal input part that the output of first comparison chip is connected, with the first signal output part that second signal comparison circuit module is connected, connect in the negative pole input of first comparison chip with first input between the first divider circuit and connect in the positive pole input of first comparison chip with second input between the second divider circuit.

According to the utility model discloses an embodiment, second signal comparison circuit module includes second comparison chip and first regulating circuit, the positive input end and the first regulating circuit of second comparison chip are connected, the negative pole input end of second comparison chip with first signal output part connects, the output of second comparison chip with second signal output circuit module connects, the second comparison chip will first input voltage value with the preset excess temperature voltage value of first regulating circuit output compares, and output comparison result gives second signal output circuit module.

According to the utility model discloses an embodiment, the overcurrent protection unit includes overcurrent protection circuit, locates first hall current sensor on the first IGBT subassembly with locate second hall current sensor on the second IGBT subassembly, first hall current sensor with second hall current sensor is connected with overcurrent protection circuit respectively, overcurrent protection circuit with the comparator is connected, first hall current sensor is used for gathering the current signal that flows through first IGBT subassembly in the IPM unit and automatic conversion third voltage value, second hall current sensor is used for gathering the current signal that flows through the second IGBT subassembly in the IPM unit and automatic conversion fourth voltage value, overcurrent protection circuit basis the third voltage value with fourth voltage value output overcurrent protection signal gives the comparator.

According to the utility model discloses an embodiment, overcurrent protection circuit includes: a third signal input circuit module, a third signal comparison circuit module and a third signal output circuit module which are connected in sequence, the third signal input circuit module comprises a third comparison chip, the negative electrode input end of the third comparison chip is connected with the first Hall current sensor, the positive electrode input end of the third comparison chip is connected with the second Hall current sensor, the output end of the third comparison chip is connected with the third signal comparison circuit module, the third comparison chip collects and compares the third voltage value and the fourth voltage value, and takes the larger voltage value of the third voltage value and the fourth voltage value as a second input voltage value, and transmits the second input voltage value to the third signal comparison circuit module, the third signal comparison circuit module compares the second input voltage value with a preset overcurrent voltage value, and the third signal output circuit module outputs an over-temperature protection signal to the comparator according to the comparison result.

According to the utility model discloses an embodiment, third signal input circuit module is still including locating the second analog switch of the output of third comparison chip, the second analog switch include with the second signal input part that the output of third comparison chip is connected, with the second signal output part that third signal comparison circuit module is connected, connect in the third input of the negative pole input of third comparison chip and connect in the fourth input of the positive pole input of third comparison chip.

According to the utility model discloses an embodiment, third signal comparison circuit module includes fourth comparison chip and second regulating circuit, the negative pole input of fourth comparison chip with second regulating circuit connects, the positive pole input of fourth comparison chip with second signal output part connects, the output of fourth comparison chip with third signal output circuit module connects, the fourth comparison chip will second input voltage value with the preset overcurrent voltage value of second regulating circuit output compares, and output comparison result gives third signal output circuit module.

The utility model discloses an IPM protection system has added a set of short circuit detection to the pulse signal of input on the basis of original short circuit detection to the IGBT subassembly on the one hand, under the condition that has wrong pulse signal input, blocks pulse signal and continues to transmit, makes it can't transmit IPM unit, reaches the purpose of protection IGBT subassembly; on the other hand adopts the comparator to handle and judge short-circuit protection signal, excess temperature protection signal and overcurrent protection signal to output turn-off signal gives line driver, line driver acts as the effect of a switch, passes through/blocks first pulse signal and second pulse signal according to the level state control of turn-off signal, the utility model discloses the IPM protection system of embodiment is whole to be constituteed by hardware, compares with the system that software and hardware combines, has reduced the required peripheral circuit of MCU controller, simplifies the system architecture, need not software programming simultaneously, has reduced the task load and the development degree of difficulty of system development, has improved the security and the accuracy of system, also has apparent improvement on information processing's efficiency.

Drawings

Fig. 1 is a schematic structural diagram of an IPM protection system for a flywheel energy storage device according to the present invention.

Fig. 2 is a schematic structural diagram of the short-circuit protection circuit of the present invention.

Fig. 3 is a schematic structural diagram of the over-temperature protection circuit of the present invention.

Fig. 4 is a schematic structural diagram of the overcurrent protection circuit of the present invention.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

In the following, many aspects of the present invention will be better understood with reference to the drawings. The components in the drawings are not necessarily to scale. Instead, emphasis is placed upon clearly illustrating the components of the present invention. Moreover, in the several views of the drawings, like reference numerals designate corresponding parts.

The word "exemplary" or "illustrative" as used herein means serving as an example, instance, or illustration. Any embodiment described herein as "exemplary" or "illustrative" is not necessarily to be construed as preferred or advantageous over other embodiments. All of the embodiments described below are exemplary embodiments provided to enable persons skilled in the art to make and use the examples of the disclosure and are not intended to limit the scope of the disclosure, which is defined by the claims. In other instances, well-known features and methods have been described in detail so as not to obscure the invention. For purposes of the description herein, the terms "upper," "lower," "left," "right," "front," "rear," "vertical," "horizontal," and derivatives thereof shall relate to the invention as oriented in fig. 1. Furthermore, there is no intention to be bound by any expressed or implied theory presented in the preceding technical field, background, brief summary or the following detailed description. It is also to be understood that the specific devices and processes illustrated in the attached drawings, and described in the following specification are simply exemplary embodiments of the inventive concepts defined in the appended claims. Hence, specific dimensions and other physical characteristics relating to the embodiments disclosed herein are not to be considered as limiting, unless the claims expressly state otherwise.

The embodiment of the utility model discloses IPM protection system for flywheel energy memory, this IPM protection system is applicable to 200 KW's flywheel energy memory on 1500V's the subway track.

FIG. 1 illustrates an IPM protection system for a flywheel energy storage device, referring to FIG. 1, comprising: a signal generation unit 20, an IPM unit 30, a short-circuit protection unit (not shown in the figure), an over-temperature protection unit (not shown in the figure), an over-current protection unit (not shown in the figure), a comparator 40, and a line driver 50. Referring to fig. 2, the signal generating unit 20 includes a first generating terminal 201 for generating and outputting a first pulse signal and a second generating terminal 202 for generating and outputting a second pulse signal, and the IPM unit 30 includes a first IGBT component (not shown) and a second IGBT component (not shown).

Further, referring to fig. 1, an input end of the short-circuit protection unit is connected to the IPM unit 30 and the signal generation unit 20, an output end of the short-circuit protection unit is connected to the comparator 40, and the short-circuit protection unit collects a gate-level voltage signal of the first IGBT component, a gate-level voltage signal of the second IGBT component, the first pulse signal, and the second pulse signal and outputs a short-circuit protection signal to the comparator 40.

The short-circuit protection unit of the embodiment adds a group of short-circuit detection for the input pulse signal on the basis of the original short-circuit detection for the IGBT component, and blocks the pulse signal from being continuously transmitted when an error pulse signal is input, so that the pulse signal cannot be transmitted to the IPM unit 30, thereby achieving the purpose of protecting the IGBT component.

Further, referring to fig. 1, an input end of the over-temperature protection unit is connected to the IPM unit 30, an output end of the over-temperature protection unit is connected to the comparator 40, and the over-temperature protection unit collects the temperature of the first IGBT component and the temperature of the second IGBT component and outputs an over-temperature protection signal to the comparator 40.

The over-temperature protection unit of this embodiment blocks the pulse signal from being transmitted continuously when the temperature of the IGBT component is over-temperature, so that the pulse signal cannot be transmitted to the IPM unit 30, thereby achieving the purpose of protecting the IGBT component.

Further, referring to fig. 1, an input end of the overcurrent protection unit is connected to the IPM unit 30, an output end of the overcurrent protection unit is connected to the comparator 40, and the overcurrent protection unit collects a current signal flowing through the first IGBT component in the IPM unit 30 and a current signal flowing through the second IGBT component in the IPM unit 30 and outputs an overcurrent protection signal to the comparator 40.

When the temperature of the IGBT component is over-current, the over-current protection unit of this embodiment blocks the pulse signal from being transmitted continuously, so that the pulse signal cannot be transmitted to the IPM unit 30, thereby achieving the purpose of protecting the IGBT component.

Further, referring to fig. 1, the line driver 50 is respectively connected to the comparator 40, the IPM unit 30 and the signal generating unit 20, when the short-circuit protection signal, the over-temperature protection signal and the over-current protection signal are simultaneously in a low level state, the shutdown signal output by the comparator 40 is in a low level state, the line driver 50 controls the first pulse signal and the second pulse signal to pass through and transmit to the IPM unit 30, otherwise, the shutdown signal output by the comparator 40 is in a high level state, and the line driver 50 controls the first pulse signal and the second pulse signal to be blocked from transmitting to the IPM unit 30.

The embodiment of the utility model discloses an adopt comparator 40 to handle and judge short-circuit protection signal, excess temperature protection signal and overcurrent protection signal to output turn-off signal gives line driver 50, and line driver 50 acts as the effect of a switch, passes through/blocks first pulse signal and second pulse signal according to the level state control of turn-off signal. The utility model discloses IPM protection system is whole to be constituteed by hardware, compares with the system that software and hardware combines, has reduced the required peripheral circuit of MCU controller, simplifies the system architecture, need not software programming simultaneously, has reduced the task load and the development degree of difficulty of system development, has improved the security and the accuracy of system, also has apparent improvement on information processing's efficiency.

On the basis of the above embodiment, the line driver 50 includes a signal input pin, an enable pin and a signal output pin, the enable pin is connected to the comparator 40, the input pin is connected to the signal generating unit and is used for inputting the first pulse signal and the second pulse signal, the output pin is connected to the IPM unit 30 and is used for outputting the first pulse signal and the second pulse signal to the IPM unit 30, and the comparator 40 outputs the shutdown signal according to the received short-circuit protection signal, the over-temperature protection signal and the over-current protection signal. The comparator 40 is a three-input or gate, when the short-circuit protection signal, the over-temperature protection signal and the over-current protection signal are in a low level state at the same time, the turn-off signal output by the comparator 40 is in a low level state, otherwise, the turn-off signal output by the comparator 40 is in a high level state; the first and second pulse signals are transferred to the IPM unit 30 through the enable pin when the off signal is in a low level state (the enable pin is in a low level), and the enable pin blocks the first and second pulse signals from being transferred to the IPM unit 30 when the off signal is in a high level state (the enable pin is in a high level).

According to an embodiment of the present invention, please refer to fig. 2, the short circuit protection unit includes a short circuit protection circuit 60, two first voltage sensors (not shown in the figure) disposed on the first IGBT component and two second voltage sensors (not shown in the figure) disposed on the second IGBT component, and the first voltage sensor and the second voltage sensor are respectively connected to the short circuit protection circuit 60. The gate-level voltage signal of the first IGBT component comprises an upper gate-level voltage signal of the first IGBT component and a lower gate-level voltage signal of the first IGBT component, and the gate-level voltage signal of the second IGBT component comprises an upper gate-level voltage signal of the second IGBT component and a lower gate-level voltage signal of the second IGBT component. The first IGBT assembly comprises an upper bridge arm and a lower bridge arm, and the two first voltage sensors are respectively used for acquiring an upper gate-level voltage signal (namely, a gate-level voltage signal of the upper bridge arm) of the first IGBT assembly and a lower gate-level voltage signal (namely, a gate-level voltage signal of the lower bridge arm) of the first IGBT assembly; the second IGBT assembly comprises an upper bridge arm and a lower bridge arm, and the two second voltage sensors are respectively used for acquiring an upper gate-level voltage signal (namely the gate-level voltage signal of the upper bridge arm) of the second IGBT assembly and a lower gate-level voltage signal (namely the gate-level voltage signal of the lower bridge arm) of the second IGBT assembly. In this embodiment, the first IGBT component and the second IGBT component may operate separately or simultaneously.

In this embodiment, referring to fig. 2, the short-circuit protection circuit includes: a first signal input circuit module 601, a first signal comparison circuit module 602 and a first signal output circuit module 603, which are connected in sequence, wherein the first signal comparison circuit module 602 comprises a first and gate logic gate chip 6020, a second and gate logic gate chip 6021, a third and gate logic gate chip 6022 and an or gate logic gate chip 6023, the input end of the or gate logic gate chip 6023 is respectively connected with the output end of the first and gate chip 6020, the output end of the second and gate chip 6021 and the output end of the third and gate chip 6022, the output terminal of the or gate logic gate chip 6023 is connected to the first signal output circuit module 603, the first and gate logic gate chip 6020 is grounded and connected to the reference voltage generator, the second and gate logic gate chip 6021 is grounded and connected to the reference voltage generator, the third and gate logic gate chip 6022 is grounded and connected to the reference voltage generator, or the or gate logic gate chip 6023 is grounded and connected to the reference voltage generator. The first and gate chip 6020 outputs a first level signal according to the first pulse signal and the second pulse signal, and when the first pulse signal and the second pulse signal are simultaneously at a high level, the first level signal output by the first and gate chip 6020 is at a high level, otherwise, the first level signal output by the first and gate chip 6020 is at a low level. The second and gate logic gate chip 6021 outputs a second level signal according to the upper gate level voltage signal of the first IGBT component and the lower gate level voltage signal of the first IGBT component, when the upper gate level voltage signal of the first IGBT component and the lower gate level voltage signal of the first IGBT component are simultaneously at a high level, the second level signal output by the second and gate logic gate chip 6021 is at a high level, otherwise, the second level signal output by the second and gate logic gate chip 6021 is at a low level. The third and gate logic gate chip 6022 outputs a third level signal according to the upper gate level voltage signal of the second IGBT component and the lower gate level voltage signal of the second IGBT component, when the upper gate level voltage signal of the second IGBT component and the lower gate level voltage signal of the second IGBT component are simultaneously at a high level, the third level signal output by the third and gate logic gate chip 6022 is at a high level, otherwise, the third level signal output by the third and gate logic gate chip 6022 is at a low level. The or gate logic gate chip 6023 outputs a fourth level signal to the first signal output circuit module 603 according to the first level signal, the second level signal and the third level signal, when only one of the first level signal, the second level signal and the third level signal is a high level, the fourth level signal output by the or gate logic gate chip 6023 is a high level, otherwise, the fourth level signal output by the or gate logic gate chip 6023 is a low level, and the first signal output circuit module 603 outputs a short-circuit protection signal to the comparator 40 according to the fourth level signal.

Further, referring to fig. 2, the first signal output circuit module 603 includes two first not chips 6030 connected in series in sequence. The first not-gate chip 6030 is configured to enhance the fourth level signal and stabilize the fourth level signal, when the fourth level signal is at a low level, the short-circuit protection signal output by the first signal output circuit module 603 is the enhanced and stabilized fourth level signal, and the short-circuit protection signal is at a low level and indicates that the signal is normal; when the fourth level signal is at a high level, the short-circuit protection signal output by the first signal output circuit module 603 is the enhanced and stabilized fourth level signal, and the short-circuit protection signal is at a high level, which indicates that the signal is abnormal.

Further, referring to fig. 2, the first signal input circuit module 601 includes a first resistor 1 and a second resistor 2, where the first resistor 1 is connected in series with the input terminal of the first and logic gate chip 6020 and the first generation terminal 201, respectively, and the second resistor 2 is connected in series with the input terminal of the first and logic gate chip 6020 and the second generation terminal 202, respectively.

Further, referring to fig. 2, the first signal input circuit module 601 includes a third resistor 3 and a fourth resistor 4, where the third resistor 3 is respectively connected in series with the input terminal of the second and logic gate chip 6021 and one of the first voltage sensors, and the fourth resistor 4 is respectively connected in series with the input terminal of the second and logic gate chip 6021 and the other of the first voltage sensors.

Further, referring to fig. 2, the first signal input circuit module 601 includes a fifth resistor 5 and a sixth resistor 6, the fifth resistor 5 is respectively connected in series with the input terminal of the third and logic gate chip 6022 and one of the second voltage sensors, and the sixth resistor 6 is respectively connected in series with the input terminal of the third and logic gate chip 6022 and the other of the second voltage sensors.

According to an embodiment of the present invention, please refer to fig. 3, the over-temperature protection unit includes an over-temperature protection circuit 70, locate first temperature sensor 301 on the first IGBT subassembly and locate second temperature sensor 302 on the second IGBT subassembly, first temperature sensor 301 and second temperature sensor 302 are connected with over-temperature protection circuit 70 respectively, over-temperature protection circuit 70 is connected with comparator 40, first temperature sensor 301 is used for gathering the temperature of the first IGBT subassembly, second temperature sensor 302 is used for gathering the temperature of the second IGBT subassembly, over-temperature protection circuit 70 outputs over-temperature protection signal for comparator 40 according to the temperature of the first IGBT subassembly, the temperature of the second IGBT subassembly.

Further, referring to fig. 3, the over-temperature protection circuit 70 includes: a second signal input circuit module 701, a second signal comparison circuit module 702 and a second signal output circuit module 703 connected in sequence, wherein the second signal input circuit module 701 includes a first comparison chip 7010, a first voltage division circuit 7011 and a second voltage division circuit 7012, the first comparison chip 7010 is connected to ground and to a reference voltage generator, one end of the first voltage division circuit 7011 is connected to the first temperature sensor 301, the other end of the first voltage division circuit 7011 is connected to a negative input terminal of the first comparison chip 7010, one end of the second voltage division circuit 7012 is connected to the second temperature sensor 302, the other end of the second voltage division circuit 7012 is connected to a positive input terminal of the first comparison chip 7010, an output terminal of the first comparison chip 7010 is connected to the second signal comparison circuit module 703, the first voltage division circuit 7011 outputs a first voltage value corresponding to the temperature of the first IGBT component, the second voltage division circuit 7012 outputs a second voltage value corresponding to the temperature of the second IGBT component, the first comparison chip 7010 collects and compares the first voltage value and the second voltage value, and transmits a smaller voltage value of the first voltage value and the second voltage value as a first input voltage value to the second signal comparison circuit module 702; the second signal comparing circuit module 702 compares the first input voltage value with a preset over-temperature voltage value, and the second signal output circuit module 703 outputs an over-temperature protection signal to the comparator 40 according to the comparison result of the second signal comparing circuit module 702.

In the present embodiment, by directly detecting the temperature of the IGBT component, which is equivalent to detecting the temperature of the IPM unit 10, the first temperature sensor 301 and the second temperature sensor 302 are equivalent to thermistors, the voltage value at TP1 is a first voltage value, the voltage value at TP2 is a second voltage value, when the temperature of the first IGBT component increases, the resistance value of the first temperature sensor 301 decreases, and the voltage value at TP1 decreases as the resistance value of the first temperature sensor 301 decreases, that is, the voltage value of TP1 is in inverse proportion to the temperature of the first IGBT component; when the temperature of the second IGBT component increases, the resistance value of the second temperature sensor 302 decreases, and the voltage value at TP2 decreases as the resistance value of the second temperature sensor 302 decreases, i.e., the voltage value of TP2 is inversely proportional to the temperature of the second IGBT component.

Further, referring to fig. 3, the second signal input circuit module 701 further includes a first analog switch 7013 disposed at the output end of the first comparing chip 7010, where the first analog switch 7013 includes a first signal input end (i.e., Vin end) connected to the output end of the first comparing chip 7010, a first signal output end (i.e., OUT end) connected to the second signal comparing circuit module 702, a first input end (i.e., NO end) connected between the negative input end of the first comparing chip 7010 and the first voltage dividing circuit 7011, and a second input end (i.e., NC end) connected between the positive input end of the first comparing chip 7010 and the second voltage dividing circuit 7012. The second analog switch 7013 further includes a ground terminal (i.e., GND terminal) and a power terminal (i.e., Vcc terminal) connected to the reference voltage generator.

In this embodiment, when the first voltage value is greater than the second voltage value, the first comparing chip 7010 outputs a low level to the first analog switch 7013, and when the first signal input terminal is in a low level state, the first signal output terminal is connected to the second input terminal, and the second voltage value is transmitted to the second signal comparing circuit module 702 as the first input voltage value; when the first voltage value is smaller than the second voltage value, the first comparing chip 7010 outputs a high level to the first analog switch 7013, and when the first signal input terminal is in a high level state, the first signal output terminal is connected to the first input terminal, and the first voltage value is transmitted to the second signal comparing circuit module 702 as the first input voltage value.

Further, referring to fig. 3, the first voltage dividing circuit 7011 includes a seventh resistor 7 and an eighth resistor 8, one end of the seventh resistor 7, one end of the eighth resistor 8 and the negative input end of the first comparing chip 7010 are interconnected, the other end of the seventh resistor 7 is connected to the first temperature sensor 301, and the other end of the eighth resistor 8 is connected to the reference voltage generator.

Further, referring to fig. 3, the second voltage-dividing circuit 7012 includes a ninth resistor 9 and a tenth resistor 10, one end of the ninth resistor 9, one end of the tenth resistor 10, and the positive input end of the first comparing chip 7010 are interconnected, the other end of the ninth resistor 9 is connected to the second temperature sensor 302, and the other end of the tenth resistor 10 is connected to the reference voltage generator.

Further, referring to fig. 3, the second signal comparison circuit module 702 includes a second comparison chip 7020 and a first adjustment circuit 7021, the second comparison chip 7020 is grounded and connected to the reference voltage generator, an anode input terminal of the second comparison chip 7020 is connected to the first adjustment circuit 7021, a cathode input terminal of the second comparison chip 7020 is connected to the first signal output terminal, an output terminal of the second comparison chip 7020 is connected to the second signal output circuit module 703, the second comparison chip 7020 compares the first input voltage value with the preset over-temperature voltage value output by the first adjustment circuit 7021, and outputs a comparison result to the second signal output circuit module 703. When the first input voltage value is greater than or equal to the preset over-temperature voltage value, the second comparison chip 7020 outputs a low level to the second signal output circuit module 703, and when the first input voltage value is less than the preset over-temperature voltage value, the second comparison chip 7020 outputs a high level to the second signal output circuit module 703.

Further, referring to fig. 3, the first adjusting circuit 7021 includes an eleventh resistor 11 and a twelfth resistor 12, an anode input terminal of the second comparing chip 7020 is interconnected with one end of the eleventh resistor 11 and one end of the twelfth resistor 12, the other end of the eleventh resistor 11 is grounded, and the other end of the twelfth resistor 12 is connected to the reference voltage generator. The first adjusting circuit 7021 adjusts the output voltage (the voltage value at TP 3) of the first adjusting circuit 7021 to a voltage value corresponding to an over-temperature condition (i.e., a preset over-temperature voltage value) by adjusting the eleventh resistor 11 and the twelfth resistor 12.

Further, referring to fig. 3, the second signal output circuit module 703 includes two second not chips 7030 connected in series in sequence. The second not-gate chip 7030 is configured to enhance and stabilize a level signal, when the second comparison chip 7020 outputs a low level to the second signal output circuit module 703, the over-temperature protection signal output by the second signal output circuit module 703 is a low level after enhancement and stabilization, which indicates that the signal is normal, and when the second comparison chip 7020 outputs a high level to the second signal output circuit module 703, the over-temperature protection signal output by the second signal output circuit module 703 is a high level after enhancement and stabilization, which indicates that the signal is abnormal.

According to an embodiment of the present invention, please see fig. 4, the overcurrent protection unit includes overcurrent protection circuit 80, locate first hall current sensor 303 on the first IGBT subassembly and locate second hall current sensor 304 on the second IGBT subassembly, first hall current sensor 303 and second hall current sensor 304 are connected with overcurrent protection circuit 80 respectively, overcurrent protection circuit 80 is connected with comparator 40, first hall current sensor 303 is arranged in gathering the current signal that flows through first IGBT subassembly in the IPM unit and automatic conversion is the third voltage value, second hall current sensor 304 is arranged in gathering the current signal that flows through second IGBT subassembly in the IPM unit and automatic conversion is the fourth voltage value, overcurrent protection circuit 80 outputs overcurrent protection signal for comparator 40 according to the third voltage value and the fourth voltage value.

Further, referring to fig. 4, the over-current protection circuit 80 includes: a third signal input circuit module 801, a third signal comparison circuit module 802 and a third signal output circuit module 803 which are connected in sequence, wherein the third signal input circuit module 801 comprises a third comparison chip 8010, a negative electrode input end of the third comparison chip 8010 is connected with the first hall current sensor 303, a positive electrode input end of the third comparison chip 8010 is connected with the second hall current sensor 304, an output end of the third comparison chip 8010 is connected with the third signal comparison circuit module 802, the third comparison chip 8010 collects and compares a third voltage value and a fourth voltage value, and a larger voltage value of the third voltage value and the fourth voltage value is used as a second input voltage value and is transmitted to the third signal comparison circuit module 802; the third signal comparing circuit module 802 compares the second input voltage value with a preset over-current voltage value, and the third signal output circuit module 803 outputs an over-current protection signal to the comparator 40 according to the comparison result of the third signal comparing circuit module 802.

In the present embodiment, the first hall current sensor 303 converts the current signal flowing through the first IGBT component in the IPM unit 30 into a third voltage value in a certain proportion, the second hall current sensor 304 converts the current signal flowing through the second IGBT component in the IPM unit 30 into a fourth voltage value in a certain proportion, the voltage value at TP4 is the third voltage value, the voltage value at TP5 is the fourth voltage value, the voltage value at TP4 and the voltage value at TP5 increase with increasing current, the voltage value at TP4 is in a direct proportional relationship with the current value, and the voltage value at TP5 is in a direct proportional relationship with the current value.

Further, referring to fig. 4, the third signal input circuit block 801 further includes a second analog switch 8011 disposed at the output terminal of the third comparing chip 8010, and the second analog switch 8011 includes a second signal input terminal (i.e., Vin terminal) connected to the output terminal of the third comparing chip 8010, a second signal output terminal (i.e., OUT terminal) connected to the third signal comparing circuit block 802, a third input terminal (i.e., NC terminal) connected to the negative input terminal of the third comparing chip 8010, and a fourth input terminal (i.e., NO terminal) connected to the positive input terminal of the third comparing chip 8010. The second analog switch 8011 further includes a ground terminal (i.e., GND terminal) and a power source terminal (i.e., Vcc terminal) connected to the reference voltage generator.

In this embodiment, when the third voltage value is greater than the fourth voltage value, the third comparing chip 8010 outputs a low level to the second analog switch 8011, and when the second signal input terminal is in a low level state, the second signal output terminal is connected to the third input terminal, and the third voltage value is transmitted to the third signal comparing circuit module 802 as the second input voltage value; when the third voltage value is smaller than the fourth voltage value, the third comparing chip 8010 outputs a high level to the second analog switch 8011, and when the second signal input terminal is in a high level state, the second signal output terminal is connected to the fourth input terminal, and the fourth voltage value is transmitted to the third signal comparing circuit module 802 as the second input voltage value.

Further, referring to fig. 4, the third signal comparing circuit module 802 includes a fourth comparing chip 8020 and a second adjusting circuit 8021, the fourth comparing chip 8020 is grounded and connected to the reference voltage generator, a negative input end of the fourth comparing chip 8020 is connected to the second adjusting circuit 8021, a positive input end of the fourth comparing chip 8020 is connected to the second signal output end, an output end of the fourth comparing chip 8020 is connected to the third signal output circuit module 803, the fourth comparing chip 8020 compares the second input voltage value with the preset overcurrent voltage value output by the second adjusting circuit 8021, and outputs the comparison result to the third signal output circuit module 803. When the second input voltage value is greater than or equal to the preset overcurrent voltage value, the fourth comparison chip 8020 outputs a high level to the third signal output circuit module 803, and when the second input voltage value is less than the preset overcurrent voltage value, the fourth comparison chip 8020 outputs a low level to the third signal output circuit module 803.

Further, referring to fig. 4, the second adjusting circuit 8021 includes a thirteenth resistor 13 and a fourteenth resistor 14, a negative input terminal of the fourth comparing chip 8020 is interconnected with one end of the thirteenth resistor 13 and one end of the fourteenth resistor 14, the other end of the thirteenth resistor 13 is grounded, and the other end of the fourteenth resistor 14 is connected to the reference voltage generator. The second adjusting circuit 8021 adjusts the voltage value at TP6 to a voltage value corresponding to the overcurrent, that is, a preset overcurrent voltage value, by adjusting the thirteenth resistor 13 and the fourteenth resistor 14.

Further, referring to fig. 4, the third signal comparing circuit module 802 further includes a fifteenth resistor 15, one end of the fifteenth resistor 15 is connected between the negative input terminal of the fourth comparing chip 8020 and the second adjusting circuit 8012, and the other end of the fifteenth resistor 15 is connected to the output terminal of the fourth comparing chip 8020. The fifteenth resistor 15 is used to amplify the comparison result output by the fourth comparing chip 8020.

Further, referring to fig. 4, the third signal output circuit module 803 includes two third not chips 8030 connected in series in sequence. The third not gate chip 8030 is configured to enhance and stabilize a level signal, when the fourth comparison chip 8020 outputs a low level to the third signal output circuit module 803, the overcurrent protection signal output by the third signal output circuit module 803 is an enhanced and stabilized low level, which indicates that the signal is normal, and when the fourth comparison chip 8020 outputs a high level to the third signal output circuit module 803, the overcurrent protection signal output by the third signal output circuit module 803 is an enhanced and stabilized high level, which indicates that the signal is abnormal.

The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, as any modifications, equivalents, improvements and the like made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.

Claims

1. An IPM protection system for a flywheel energy storage device, the IPM protection system comprising: the system comprises a signal generating unit, an IPM unit, a short-circuit protection unit, an over-temperature protection unit, an over-current protection unit, a comparator and a line driver;

2. The IPM protection system of claim 1, wherein the line driver includes a signal input pin, an enable pin, and a signal output pin, the enable pin is connected to the comparator, the input pin is connected to the signal generation unit, the output pin is connected to the IPM unit, the first and second pulse signals are transmitted to the IPM unit through the enable pin when the shutdown signal is in a low level state, and the enable pin blocks the transmission of the first and second pulse signals to the IPM unit when the shutdown signal is in a high level state.

3. The IPM protection system of claim 2, wherein the short circuit protection unit comprises a short circuit protection circuit, two first voltage sensors disposed on the first IGBT assembly and two second voltage sensors disposed on the second IGBT assembly, the first voltage sensor and the second voltage sensor are respectively connected to the short circuit protection circuit, the gate voltage signal of the first IGBT assembly comprises an upper gate voltage signal of the first IGBT assembly and a lower gate voltage signal of the first IGBT assembly, the gate voltage signal of the second IGBT assembly comprises an upper gate voltage signal of the second IGBT assembly and a lower gate voltage signal of the second IGBT assembly, the two first voltage sensors are respectively used for collecting the upper gate voltage signal of the first IGBT assembly and the lower gate voltage signal of the first IGBT assembly, and the two second voltage sensors are respectively used for collecting the upper gate voltage signal of the second IGBT assembly and the second gate voltage signal of the second IGBT assembly And lower gate voltage signals of the two IGBT components.

4. The IPM protection system of claim 3, wherein the short circuit protection circuit comprises: the first signal input circuit module, the first signal comparison circuit module and the first signal output circuit module are connected in sequence, the first signal input circuit module is respectively connected with the first voltage sensor, the second voltage sensor and the signal generation unit, and the first signal output module is connected with the comparator; the first signal comparison circuit module comprises a first AND gate logic gate chip, a second AND gate logic gate chip, a third AND gate logic gate chip and an OR gate logic gate chip, wherein the input end of the OR gate logic gate chip is respectively connected with the output end of the first AND gate logic gate chip, the output end of the second AND gate logic gate chip and the output end of the third AND gate logic gate chip, the output end of the OR gate logic gate chip is connected with the first signal output circuit module, the first AND gate logic gate chip outputs a first level signal according to the first pulse signal and the second pulse signal, the second AND gate logic gate chip outputs a second level signal according to the upper gate level voltage signal of the first IGBT component and the lower gate level voltage signal of the first IGBT component, and the third AND gate logic gate chip outputs a third level signal according to the upper gate level voltage signal of the second IGBT component and the lower gate level voltage signal of the second IGBT component, the OR gate logic gate chip outputs a fourth level signal to the first signal output circuit module according to the first level signal, the second level signal and the third level signal; and the first signal output circuit module outputs the short-circuit protection signal to the comparator according to the fourth level signal.

5. The IPM protection system of claim 2, wherein the over-temperature protection unit includes an over-temperature protection circuit, a first temperature sensor disposed on the first IGBT component, and a second temperature sensor disposed on the second IGBT component, the first temperature sensor and the second temperature sensor are respectively connected to the over-temperature protection circuit, the over-temperature protection circuit is connected to the comparator, the first temperature sensor is configured to acquire a temperature of the first IGBT component, the second temperature sensor is configured to acquire a temperature of the second IGBT component, and the over-temperature protection circuit outputs an over-temperature protection signal to the comparator according to the temperature of the first IGBT component and the temperature of the second IGBT component.

6. The IPM protection system of claim 5, wherein the over-temperature protection circuit comprises: a second signal input circuit module, a second signal comparison circuit module and a second signal output circuit module connected in sequence, wherein the second signal input circuit module includes a first comparison chip, a first voltage division circuit and a second voltage division circuit, one end of the first voltage division circuit is connected with the first temperature sensor, the other end of the first voltage division circuit is connected with the negative input end of the first comparison chip, one end of the second voltage division circuit is connected with the second temperature sensor, the other end of the second voltage division circuit is connected with the positive input end of the first comparison chip, the output end of the first comparison chip is connected with the second signal comparison circuit module, the first voltage division circuit outputs a first voltage value corresponding to the temperature of the first IGBT component, the second voltage division circuit outputs a second voltage value corresponding to the temperature of the second IGBT component, the first comparison chip collects and compares the first voltage value and the second voltage value, the smaller voltage value of the first voltage value and the second voltage value is used as a first input voltage value and is transmitted to the second signal comparison circuit module, the second signal comparison circuit module compares the first input voltage value with a preset over-temperature voltage value, and the second signal output circuit module outputs an over-temperature protection signal to the comparator according to a comparison result.

7. The IPM protection system of claim 6, wherein the second signal input circuit module further includes a first analog switch disposed at an output terminal of the first comparison chip, the first analog switch includes a first signal input terminal connected to the output terminal of the first comparison chip, a first signal output terminal connected to the second signal comparison circuit module, a first input terminal connected between a negative input terminal of the first comparison chip and the first voltage divider circuit, and a second input terminal connected between a positive input terminal of the first comparison chip and the second voltage divider circuit.

8. The IPM protection system of claim 7, wherein the second signal comparison circuit module includes a second comparison chip and a first adjusting circuit, a positive input terminal of the second comparison chip is connected to the first adjusting circuit, a negative input terminal of the second comparison chip is connected to the first signal output terminal, an output terminal of the second comparison chip is connected to the second signal output circuit module, and the second comparison chip compares the first input voltage value with a preset over-temperature voltage value output by the first adjusting circuit and outputs a comparison result to the second signal output circuit module.

9. The IPM protection system of claim 2, wherein the over-current protection unit comprises an over-current protection circuit, a first Hall current sensor disposed on the first IGBT assembly, and a second Hall current sensor disposed on the second IGBT assembly, the first Hall current sensor and the second Hall current sensor are respectively connected with an overcurrent protection circuit, the over-current protection circuit is connected with the comparator, the first Hall current sensor is used for collecting a current signal flowing through the first IGBT component in the IPM unit and automatically converting the current signal into a third voltage value, the second Hall current sensor is used for collecting a current signal flowing through the second IGBT component in the IPM unit and automatically converting the current signal into a fourth voltage value, and the overcurrent protection circuit outputs an overcurrent protection signal to the comparator according to the third voltage value and the fourth voltage value.

10. The IPM protection system of claim 9, wherein the overcurrent protection circuit comprises: a third signal input circuit module, a third signal comparison circuit module and a third signal output circuit module which are connected in sequence, the third signal input circuit module comprises a third comparison chip, the negative electrode input end of the third comparison chip is connected with the first Hall current sensor, the positive electrode input end of the third comparison chip is connected with the second Hall current sensor, the output end of the third comparison chip is connected with the third signal comparison circuit module, the third comparison chip collects and compares the third voltage value and the fourth voltage value, and takes the larger voltage value of the third voltage value and the fourth voltage value as a second input voltage value, and transmits the second input voltage value to the third signal comparison circuit module, the third signal comparison circuit module compares the second input voltage value with a preset overcurrent voltage value, and the third signal output circuit module outputs an over-temperature protection signal to the comparator according to the comparison result.

11. The IPM protection system of claim 10, wherein the third signal input circuit module further includes a second analog switch disposed at the output terminal of the third comparison chip, the second analog switch includes a second signal input terminal connected to the output terminal of the third comparison chip, a second signal output terminal connected to the third signal comparison circuit module, a third input terminal connected to the negative input terminal of the third comparison chip, and a fourth input terminal connected to the positive input terminal of the third comparison chip.

12. The IPM protection system of claim 11, wherein the third signal comparing circuit module includes a fourth comparing chip and a second adjusting circuit, a negative input terminal of the fourth comparing chip is connected to the second adjusting circuit, a positive input terminal of the fourth comparing chip is connected to the second signal output terminal, an output terminal of the fourth comparing chip is connected to the third signal output circuit module, and the fourth comparing chip compares the second input voltage value with a preset over-current voltage value output by the second adjusting circuit and outputs a comparison result to the third signal output circuit module.