CN210274096U - Terahertz 2-bit encoding device and system controlled by voltage - Google Patents
Terahertz 2-bit encoding device and system controlled by voltage Download PDFInfo
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- CN210274096U CN210274096U CN201921402002.8U CN201921402002U CN210274096U CN 210274096 U CN210274096 U CN 210274096U CN 201921402002 U CN201921402002 U CN 201921402002U CN 210274096 U CN210274096 U CN 210274096U
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Abstract
The utility model provides a voltage control's terahertz is 2 bit encoding device and system now, include: the square structure units are respectively arranged on two sides of the square substrate and are arranged periodically; the square structural unit comprises a metal structure and a semiconductor structure; the semiconductor structure comprises a cylindrical P-type semiconductor and a cylindrical N-type semiconductor, wherein the bottom surface of the N-type semiconductor is attached to a square substrate, and the P-type semiconductor is arranged on the N-type semiconductor to form a PN junction in a circular area; the metal structure comprises an annular metal layer attached to the square substrate, a first metal electrode and a second metal electrode, wherein the first metal electrode of each metal structure is connected, and the second metal electrode of each metal structure is connected. The encoder and the control end form an encoding system, and the two-bit encoding function of the terahertz wave is realized by independently controlling the voltage of each metal electrode. The utility model discloses can have coding speed fast, easy and simple to handle and practicality advantage such as strong.
Description
Technical Field
The utility model belongs to the technical field of terahertz communication and specifically relates to a voltage control's terahertz 2 bit code devices and system is related to.
Background
Terahertz is an electromagnetic wave with a frequency of 0.1THz to 10THz, and is between infrared and microwave in the electromagnetic spectrum. The terahertz wave transmission device can realize artificial regulation and control of terahertz waves by utilizing the metamaterial, has higher transmission bandwidth and larger channel capacity compared with the existing short-wave and microwave communication by taking terahertz as a communication means, and is stronger in penetrability, better in transmission directivity and relatively higher in information transmission safety. With the increase of the demand for communication, the technology related to terahertz communication is in urgent need of development, and related communication devices are the focus of research. In the inter-satellite communication of the near-earth orbit and the high orbit space, the limitation of an atmosphere transmission window is avoided under the vacuum condition, and the terahertz communication has better application prospect.
It is reported that the current metamaterial-based control means mostly use multilayer three-dimensional metal structures composed of a plurality of frequency selective surfaces, and such structures pose great challenges to the manufacturing process and have high difficulty and price in manufacturing. In addition, a scheme for controlling terahertz waves through the super surface is also provided, a structure of a super-woven surface is controlled by using a programmable gate array, and a space directional diagram of terahertz waves irradiated onto the super surface is modulated, so that multi-bit coding is realized. However, the requirement of the encoding scheme on the optical path is strict, because the directional diagram of the electromagnetic wave is modulated, the position of the receiver needs to be changed to detect different encoding information, and the encoding scheme is difficult to apply in terahertz communication for a short time. And part of encoding devices are encoded and controlled in a mechanical mode, the encoding rate is greatly limited by a mechanical structure, and the terahertz communication efficiency is greatly influenced.
With the continuous development of communication technology, a terahertz coding device with low requirements on manufacturing processes, simple structure, high coding speed and high efficiency is urgently needed in the aspect of terahertz communication.
SUMMERY OF THE UTILITY MODEL
In view of the above shortcomings in the prior art, an object of the present invention is to provide a voltage-controlled terahertz 2-bit encoding device and system, which can realize two-bit encoding function of terahertz wave, and has the advantages of fast encoding speed, short response time, etc.
In order to achieve the above objects and other related objects, the present invention provides a voltage-controlled terahertz 2-bit encoding device, which comprises:
the square structure units are respectively arranged on two sides of the square substrate and are arranged periodically;
the square structural unit comprises a metal structure and a semiconductor structure;
the semiconductor structure comprises a cylindrical P-type semiconductor 310 and a cylindrical N-type semiconductor 31, wherein the bottom surface of the N-type semiconductor is attached to the square substrate 2, and the P-type semiconductor is arranged on the N-type semiconductor to form a PN junction in a circular area;
the metal structures comprise annular metal layers attached to the square substrate, first metal electrodes 39 and second metal electrodes 35, the first metal electrodes of each metal structure are connected, and the second metal electrodes of each metal structure are connected;
the annular metal layer is arranged around the semiconductor structure, and an isolation layer is arranged on the surface of the semiconductor structure or/and the surface of the annular metal layer;
two openings are formed in the annular metal layer, so that the annular metal layer forms a first arc-shaped metal layer 311 and a second arc-shaped metal layer 33 which are symmetrically arranged, and arcs of the first arc-shaped metal layer and arcs of the second arc-shaped metal layer are minor arcs; the highest point of the arc of the first arc-shaped metal layer extends towards the direction far away from the center of the semiconductor structure to form a first connecting part 37, the first connecting part is connected with the first metal electrode, the highest point of the arc of the first arc-shaped metal layer extends towards the direction of the center of the semiconductor structure to form a second connecting part 38, and the second connecting part is inserted into the N-type semiconductor and attached to the square substrate; the highest point of the arc of the second arc-shaped metal layer extends towards the direction far away from the center of the semiconductor structure to form a third connecting part 36, the third connecting part is connected with the second metal electrode, the highest point of the arc of the second arc-shaped metal layer extends towards the direction of the center of the semiconductor structure to form a fourth connecting part 34, and the fourth connecting part is attached to one side of the P-type semiconductor.
Optionally, the isolation layer is a silicon oxide layer.
Optionally, the square substrate is a sapphire substrate.
Optionally, the thickness of the sapphire substrate is 400-1000 microns, and the side length of the structural unit is 5-500 microns.
Optionally, the height of the semiconductor structure is 1-2 microns.
Optionally, the thickness of the annular metal layer is smaller than that of the N-type semiconductor.
Optionally, the thickness of the annular metal layer in the structural unit arranged on one side of the square substrate is 0.1-0.3 micrometer, the outer diameter of the annular metal layer is 40-500 micrometers, the inner diameter of the annular metal layer is 20-300 micrometers, and the width of the opening of the annular metal layer is 4-100 micrometers.
Optionally, the thickness of the annular metal layer in the structural unit arranged on the other side of the square substrate is 0.1-0.3 micrometer, the outer diameter of the annular metal layer is 50-500 micrometers, the inner diameter of the annular metal layer is 45-500 micrometers, and the width of the opening of the annular metal layer is 4-100 micrometers.
In order to realize above-mentioned purpose and other relevant purposes, the utility model provides a voltage control's terahertz 2 bit coding system, include coding device and control end, the control end has the output of two way voltage isolations, and every way output includes an anodal and a negative pole, and two anodal connections are on the metal structure of substrate one side, and two negative poles are connected on the metal structure of substrate opposite side.
As described above, the utility model discloses a voltage control's terahertz is 2 bit encoding device and system now has following beneficial effect:
the utility model provides a terahertz 2 bit code devices of voltage control suitable for terahertz communication field, fine satisfied terahertz required requirement of communication now, because adopt the IC circuit to control, the limit of encoding speed depends on the transmission physics limit of IC circuit, and the signal frequency of present IC circuit can reach the GHz rank at present, has fine application prospect in the aspect of encoding speed and application. The utility model provides a P type semiconductor uses the stacked structure to combine with N type semiconductor among the device structure, has increased the area covered of PN junction, is showing the promotion to terahertz wave's control effect.
Drawings
To further illustrate the description of the present invention, the following description is provided to further explain the embodiments of the present invention in detail with reference to the accompanying drawings. It is appreciated that these drawings are merely exemplary and are not to be considered limiting of the scope of the invention.
Fig. 1 is a front view of a terahertz 2-bit encoding device for voltage control according to an embodiment of the present invention;
fig. 2 is a rear view of a terahertz 2-bit encoding device according to an embodiment of the present invention;
fig. 3 is a side view of a terahertz 2-bit encoding device for voltage control according to an embodiment of the present invention;
fig. 4 is a top view of a terahertz 2-bit encoding device according to an embodiment of the present invention;
fig. 5 is a schematic diagram of a structural unit according to an embodiment of the present invention;
fig. 6 is a cross-sectional view of a front structure according to an embodiment of the present invention;
fig. 7 is an enlarged view of a portion a of fig. 1 according to an embodiment of the present invention;
fig. 8 is a schematic diagram of a terahertz 2-bit encoding system according to an embodiment of the present invention;
fig. 9 is a schematic diagram I of a terahertz 2-bit encoding method according to an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The present invention can also be implemented or applied through other different specific embodiments, and various details in the present specification can be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict.
It should be noted that the drawings provided in the following embodiments are only for illustrating the basic concept of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the form, amount and ratio of the components in actual implementation may be changed at will, and the layout of the components may be more complicated.
Referring to fig. 1 to 7, a voltage-controlled terahertz 2-bit encoding device includes:
the square structure units are respectively arranged on two sides of the square substrate and are arranged periodically;
the square structural unit comprises a metal structure and a semiconductor structure; in this embodiment, the structural unit is square.
The semiconductor structure comprises a P-type semiconductor 310 in a round body shape and an N-type semiconductor 31 in a cylindrical shape, wherein the bottom surface of the N-type semiconductor is attached to the square substrate 2, and the P-type semiconductor is arranged on the N-type semiconductor to form a PN junction in a round area;
the metal structures comprise annular metal layers attached to the square substrate, first metal electrodes 39 and second metal electrodes 35, the first metal electrodes of each metal structure are connected, and the second metal electrodes of each metal structure are connected;
in some embodiments, the device further comprises two metal electrodes, one of which is disposed above and below the first metal electrode, and the other of which is connected to the second metal electrode, as shown in fig. 7.
The annular metal layer is arranged around the semiconductor structure, and an isolation layer is arranged on the surface of the semiconductor structure or/and the surface of the annular metal layer; in one embodiment, the isolation layer may be a silicon oxide layer (very thin, only few nanometers) with an isolation layer that electrically isolates the semiconductor from the annular metal layer.
Two openings are formed in the annular metal layer, so that the annular metal layer forms a first arc-shaped metal layer 311 and a second arc-shaped metal layer 33 which are symmetrically arranged, and arcs of the first arc-shaped metal layer and arcs of the second arc-shaped metal layer are minor arcs; the highest point of the arc of the first arc-shaped metal layer extends towards the direction far away from the center of the semiconductor structure to form a first connecting part 37, the first connecting part is connected with the first metal electrode, the highest point of the arc of the first arc-shaped metal layer extends towards the direction of the center of the semiconductor structure to form a second connecting part 38, and the second connecting part is inserted into the N-type semiconductor and attached to the square substrate; the highest point of the arc of the second arc-shaped metal layer extends towards the direction far away from the center of the semiconductor structure to form a third connecting part 36, the third connecting part is connected with the second metal electrode, the highest point of the arc of the second arc-shaped metal layer extends towards the direction of the center of the semiconductor structure to form a fourth connecting part 34, and the fourth connecting part is attached to one side of the P-type semiconductor.
In one embodiment, the thickness of the second connecting portion is smaller than that of the first connecting portion.
Since the encoding device provided by the embodiment has a requirement on the polarization direction of the incident terahertz wave, a square mark 1 is arranged at the upper right corner of one side of the encoding device, and the mounting direction is required to be correct when the encoding device is used.
In one embodiment, the square substrate is a sapphire substrate.
In one embodiment, the sapphire substrate has a thickness of 400-1000 microns, and the side length of the structural unit is 5-500 microns.
In one embodiment, the height of the semiconductor structure is 0.2 to 2 μm.
In an embodiment, a thickness of the ring-shaped metal layer is smaller than a thickness of the N-type semiconductor.
In one embodiment, the thickness of the annular metal layer in the structural unit disposed on one side of the square substrate is 0.1-0.3 micron, the outer diameter is 40-500 microns, the inner diameter is 20-300 microns, and the opening width is 4-100 microns.
In one embodiment, the thickness of the annular metal layer in the structural unit disposed on the other side of the square substrate is 0.1-0.3 micron, the outer diameter is 50-500 microns, the inner diameter is 45-500 microns, and the opening width is 4-100 microns.
In one embodiment, the sapphire substrate has a thickness of 100 to 1000 microns, the side length of the structural unit disposed on one side of the substrate is 100 microns, and the side length of the structural unit disposed on the other side of the substrate is 200 microns. The height of the semiconductor structure is 0.5 microns. The thickness of the annular metal layer is smaller than that of the N-type semiconductor. The thickness of the annular metal layer arranged on one side of the square substrate is 0.2 micrometer, the outer diameter of the annular metal layer is 110 micrometers, the inner diameter of the annular metal layer is 90 micrometers, the width of the opening of the annular metal layer is 8 micrometers, and the length of the first connecting portion is 21 micrometers. The thickness of the annular metal layer arranged on the other side of the square substrate is 0.2 micrometer, the outer diameter of the annular metal layer is 60 micrometers, the inner diameter of the annular metal layer is 50 micrometers, the opening width of the annular metal layer is 10 micrometers, and the length of the third connecting portion is 7 micrometers. In this embodiment, the outer/inner diameters of the annular metal layers in the structural unit disposed on one side of the substrate are 60/50 micrometers and 100 micrometers, respectively, and the outer/inner diameters 110/90 of the annular metal layers in the structural unit disposed on the other side of the substrate and 200 micrometers of the substrate are combined to achieve the best effect. The two resonance frequencies constructed by the structure are 0.43THz and 0.81THz respectively.
The embodiment also provides another description mode to describe the coding device. An encoding device, comprising:
a sapphire substrate;
a metallic structure formed of a shape similar to "| -and its rotational symmetry about the y-axis. The semicircular parts in the two symmetrical structures can be regarded as a circular ring with the center positioned at the center of the structural unit, and parts are cut out along the y-axis direction, so that the structure is called a bidirectional split ring. The two sides of the longitudinally extending metal strip "|" in the structure serve as a connection between one unit, and the part is continuous between the units in the y direction. The left portion "-" of the left bidirectional split ring is a metal of equal thickness as the split ring, joining the split ring to the outside metal, and the portion "-" on the right side of the split ring is against the substrate surface, much thinner than the thickness of the bidirectional split ring, about 1/5. The left and right structures are rotationally symmetric about the y-axis of the unit.
The semiconductor structure is a cylindrical semiconductor structure, and the part can be divided into an upper part and a lower part according to doped element types, wherein the upper part and the lower part are respectively a P-type doped conductor and an N-type doped semiconductor. The bottom surface of the N-type semiconductor is directly attached to the substrate, and the negative-type structure of the left metal structure is embedded into the lower N-type semiconductor. The bottom of the upper layer of P-type semiconductor is tightly attached to the top of the N-type semiconductor, and a PN junction of a circular region is formed between the two semiconductors due to diffusion at the interface of the P-type semiconductor and the N-type semiconductor, and the area of the PN junction covers the region surrounded by the whole metal ring. The top of the right metal strip is attached to the top surface of the P-type semiconductor. In the structure, all metal and semiconductor contacts are ohmic contacts, so that Schottky contact is avoided.
The metal structure and the semiconductor structure jointly form a structural unit of the device provided by the utility model.
And periodically extending the structural units along the x direction and the y direction of an xyz coordinate system to form a composite super surface of the device. The front and back of the device are similar in structure, and different sizes and shapes are adopted, so that terahertz waves with different frequencies can be regulated and controlled.
And strip-shaped metal structures which are tightly attached to the surface of the device along the x direction are arranged on two sides of the surface of the device in the y-axis direction, the length of each strip-shaped metal structure is slightly shorter than the side length of the device, and the width of each strip-shaped metal structure is about 2-3 units. The metal strip-shaped structure on the left side of the unit is connected with the metal structure above the surface of the device, and the metal strip-shaped structure on the right side of the unit is connected with the metal strip-shaped structure below the surface of the device. By this connection, each structural unit is connected together in a parallel manner in a similar circuit.
The device structure of the present invention has been described above.
In one embodiment, the square substrate is a sapphire substrate.
In one embodiment, the sapphire substrate has a thickness of 400-1000 microns, and the square substrate has a side length of 5-500 microns.
In one embodiment, the height of the semiconductor structure is 0.2 to 2 μm.
In an embodiment, a thickness of the ring-shaped metal layer is smaller than a thickness of the N-type semiconductor.
In one embodiment, the metal ring disposed on the front surface of the square substrate has a thickness of 0.1-0.3 micron, an outer diameter of 40-500 microns, an inner diameter of 20-300 microns, and an opening width of 4-100 microns.
In one embodiment, the metal ring disposed on the back surface of the square substrate has a thickness of 0.1 to 0.3 micron, an outer diameter of 50 to 500 microns, an inner diameter of 45 to 500 microns, and an opening width of 4 to 100 microns.
In one embodiment, the substrate has a thickness of 1000 microns, the metal has a thickness of 0.5 microns, the semiconductor portion has a thickness of 1.5 microns, the front surface single feature has a side length of 100 microns, and the back surface single feature has a side length of 200 microns. The outer diameter and the inner diameter of the metal circular ring on the front surface are respectively 60 micrometers and 50 micrometers, the opening width is 8 micrometers, the short side length of the transverse connecting part is 6 micrometers, and the width of the longitudinal connecting part is the same as that of the unit; the outer diameter and the inner diameter of the back metal circular ring are respectively 110 micrometers and 90 micrometers, the opening width is 10 micrometers, the short side length of the transverse connecting part is 8 micrometers, and the width of the longitudinal connecting part is the same as that of the unit. The two resonance frequencies constructed by the structure are 0.43THz and 0.81THz respectively.
In some embodiments, as shown in fig. 8, a voltage-controlled terahertz 2-bit encoding system includes the encoding device and a control terminal, the control terminal has two voltage-isolated outputs, each output includes a positive electrode and a negative electrode, the two positive electrodes are connected to a metal structure on one side of a substrate, and the two negative electrodes are connected to a metal structure on the other side of the substrate.
The control terminal is an IC circuit, which may be but not limited to FPGA, ARM, DSP, etc.
In some embodiments, a method of encoding is provided by applying a voltage to metal structures on one side and another side of an encoder through a control terminal,
a voltage is applied to the metal structures on one side and the other side of the encoder through the control terminal,
when forward voltage is applied to the metal structure on one side, the PN junction is conducted, and the coding device is conducted on the terahertz wave of 0.43 THz;
when negative voltage is applied to the metal structure on one side, the PN junction is cut off, and the coding device blocks the terahertz wave of 0.43 THz;
when forward voltage is applied to the metal structure on the other side, the PN junction is conducted, and the coding device is conducted on the terahertz wave of 0.81 THz;
when negative voltage is applied to the metal structure on the other side, the PN junction is cut off, and the coding device blocks the terahertz wave of 0.81 THz;
when negative voltage is applied to the metal structure on one side, negative voltage is applied to the metal structure on the other side, and the code 00 is obtained;
when negative voltage is applied to the metal structure on one side, positive voltage is applied to the metal structure on the other side, and a code 01 is obtained;
when positive voltage is applied to the metal structure on one side, negative voltage is applied to the metal structure on the other side, and a code 10 is obtained;
when a forward voltage is applied to the metal structure on one side and a forward voltage is applied to the metal structure on the other side, the code 11 is obtained.
The utility model provides an encoding scheme regulates and control respectively the terahertz wave of different frequencies, and then realizes many codes.
The utility model provides a coding device suitable for terahertz communication field, fine satisfied terahertz required requirement of communication now, because adopt the IC circuit to control, the limit of encoding speed depends on the transmission physics limit of IC circuit, and the signal frequency of present IC circuit can reach the GHz rank at present, has fine application prospect in the aspect of encoding speed and application. Furthermore, with the use of well-established photolithography and ion etching techniques, devices can be made without difficulty and at a relatively low cost.
The above embodiments are merely illustrative of the principles and effects of the present invention, and are not to be construed as limiting the invention. Modifications and variations can be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which may be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (9)
1. A voltage-controlled terahertz 2-bit encoding device is characterized by comprising:
the square structure units are respectively arranged on two sides of the square substrate and are arranged periodically;
the square structural unit comprises a metal structure and a semiconductor structure;
the semiconductor structure comprises a cylindrical P-type semiconductor (310) and a cylindrical N-type semiconductor (31), wherein the bottom surface of the N-type semiconductor is attached to the square substrate (2), and the P-type semiconductor is arranged on the N-type semiconductor to form a PN junction in a circular area;
the metal structures comprise annular metal layers attached to the square substrate, first metal electrodes (39) and second metal electrodes (35), the first metal electrodes of each metal structure are connected, and the second metal electrodes of each metal structure are connected;
the annular metal layer is arranged around the semiconductor structure, and an isolation layer is arranged on the surface of the semiconductor structure or/and the surface of the annular metal layer;
two openings are formed in the annular metal layer, so that the annular metal layer forms a first arc-shaped metal layer (311) and a second arc-shaped metal layer (33) which are symmetrically arranged, and arcs of the first arc-shaped metal layer and arcs of the second arc-shaped metal layer are minor arcs; the highest point of the arc of the first arc-shaped metal layer extends towards the direction far away from the center of the semiconductor structure to form a first connecting part (37), the first connecting part is connected with the first metal electrode, the highest point of the arc of the first arc-shaped metal layer extends towards the direction of the center of the semiconductor structure to form a second connecting part (38), and the second connecting part is inserted into the N-type semiconductor and attached to the square substrate; and the highest point of the arc of the second arc-shaped metal layer extends towards the direction far away from the center of the semiconductor structure to form a third connecting part (36), the third connecting part is connected with the second metal electrode, the highest point of the arc of the second arc-shaped metal layer extends towards the direction of the center of the semiconductor structure to form a fourth connecting part (34), and the fourth connecting part is attached to one side of the P-type semiconductor.
2. The voltage-controlled terahertz 2-bit encoding device according to claim 1, wherein the isolation is a silicon oxide layer.
3. The voltage-controlled terahertz 2-bit encoding device according to claim 1, wherein the square substrate is a sapphire substrate.
4. The voltage-controlled terahertz 2-bit encoding device as claimed in claim 3, wherein the sapphire substrate has a thickness of 400-1000 microns, and the structural units have a side length of 5-500 microns.
5. The voltage-controlled terahertz 2-bit encoding device as claimed in claim 1, wherein the height of the semiconductor structure is 1-2 microns.
6. The voltage-controlled terahertz 2-bit encoding device according to claim 1, wherein the thickness of the annular metal layer is smaller than that of the N-type semiconductor.
7. The voltage-controlled terahertz 2-bit encoding device as claimed in claim 1, wherein the thickness of the annular metal layer in the structural unit disposed on one side of the square substrate is 0.1-0.3 micrometers, the outer diameter thereof is 40-500 micrometers, the inner diameter thereof is 20-300 micrometers, and the opening width thereof is 4-100 micrometers.
8. The voltage-controlled terahertz 2-bit encoding device as claimed in claim 1, wherein the thickness of the annular metal layer in the structural unit disposed on the other side of the square substrate is 0.1-0.3 micrometers, the outer diameter thereof is 50-500 micrometers, the inner diameter thereof is 45-500 micrometers, and the opening width thereof is 4-100 micrometers.
9. A voltage-controlled terahertz 2-bit coding system is characterized by comprising a coding device and a control end according to any one of claims 1 to 8, wherein the control end is provided with two paths of voltage-isolated outputs, each path of output comprises a positive pole and a negative pole, the two positive poles are connected to a metal structure on one side of a substrate, and the two negative poles are connected to a metal structure on the other side of the substrate.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110445553A (en) * | 2019-08-27 | 2019-11-12 | 桂林电子科技大学 | A kind of 2 code devices of voltage-controlled Terahertz and method |
| CN112382859A (en) * | 2020-10-31 | 2021-02-19 | 华南理工大学 | Double-capacitor terahertz metamaterial electric regulation and control device structure |
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2019
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110445553A (en) * | 2019-08-27 | 2019-11-12 | 桂林电子科技大学 | A kind of 2 code devices of voltage-controlled Terahertz and method |
| CN112382859A (en) * | 2020-10-31 | 2021-02-19 | 华南理工大学 | Double-capacitor terahertz metamaterial electric regulation and control device structure |
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