CN209992365U - Testing device for detecting bonding strength of semiconductor device - Google Patents
Testing device for detecting bonding strength of semiconductor device Download PDFInfo
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- CN209992365U CN209992365U CN201920523145.8U CN201920523145U CN209992365U CN 209992365 U CN209992365 U CN 209992365U CN 201920523145 U CN201920523145 U CN 201920523145U CN 209992365 U CN209992365 U CN 209992365U
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- free end
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Abstract
The utility model discloses a testing arrangement for detecting semiconductor device bonding strength relates to the semiconductor and detects technical field, has solved prior art semiconductor device bonding strength testing arrangement and has appeared measuring the problem of failure easily, and its technical essential is: the device comprises an installation plate, wherein a composite cantilever beam is fixedly installed on the installation plate, and a displacement sensor for measuring the displacement variation of a free end is fixedly installed on the upper part of the free end of the composite cantilever beam on the installation plate; the utility model discloses a displacement sensor who is used for detecting compound cantilever beam free end position on fixing the mounting panel, in the process of test cutter fracture semiconductor material layer, the position of real-time detection test cutter has guaranteed that test cutter can not produce excessively to pierce through and pierce through not enough problem to the result of test failure has been avoided; simultaneously the utility model discloses a contact pick ware control test cutter cut the dynamics for the testing process is controllable.
Description
Technical Field
The utility model relates to a semiconductor testing technology field especially relates to a testing arrangement for detecting semiconductor device bonding strength.
Background
With the continuous development of semiconductor technology, more and more functions are integrated on a wafer substrate with a small size, wiring on the wafer substrate is more and more dense, circuit lamination is more and more, a circuit layer where a bonding point pad of a semiconductor device is located below a device surface passivation layer or a circuit layer or other protective layers, the bonding point pad space is narrow, a conventional shear test method cannot be adopted, and a test tool must penetrate through the surface passivation layer or the circuit layer or other protective layers to perform effective bonding point strength test.
Chinese patent application No. ZL201110157669.8 provides a testing device: the main body of the device consists of a horizontal composite cantilever beam structure and an air bearing, wherein one end of the composite cantilever beam is fixed on a fixed block, the other end (free end) is connected with a moving block and a shearing tool (push broach), and the free end of the cantilever beam can freely move up and down under the action of the air bearing. The displacement generated when a probe fixed on a moving block at the free end of the composite cantilever beam contacts an attachment plane of a tested target object is sensed by a photoelectric sensor, then compressed air is closed, the action of an air bearing is stopped, the moving block is fixed on a fixed block by the elasticity of the composite cantilever beam to achieve the purpose of positioning, then the slider of the air bearing is attached to the fixed block by the elasticity of the composite cantilever beam, the friction force between the slider and the fixed block is utilized to keep the push broach gesture to downwards press and penetrate through a passivation layer or a circuit layer or other protective layers on the surface of a semiconductor device, wherein the passivation layer or the circuit layer or other protective layers are higher than a bonding point pad circuit layer, and then the conventional shear.
However, the device carries the force of the testing tool pressing down the passivation layer or circuit layer or other protective layer which penetrates through the surface of the semiconductor device and is higher than the circuit layer of the bonding point pad directly to the testing sensor, and is completely maintained by the friction resistance of the sliding block and the fixed block of the air bearing without considering the stress and the deformation of the material, and positional deviation due to factors such as insufficient frictional resistance, leading to uncertainty in measuring the penetration distance of the tool, due to the problems that the contact area of the testing cutter and the semiconductor device is not exact, the horizontal testing sensor is stressed in the vertical direction and also deforms, and the like, the problem of over-penetration or under-penetration occurs in the mode that the testing cutter directly presses down the passivation layer or the circuit layer or other protective layers which penetrate through the surface of the semiconductor device and are higher than the bonding point pad circuit layer, so that the testing failure is caused.
SUMMERY OF THE UTILITY MODEL
The to-be-solved technical problem of the utility model is to above-mentioned defect, a testing arrangement for detecting semiconductor device bonding strength is provided to solve prior art semiconductor device bonding strength testing arrangement and appear measuring the problem of failure easily.
In order to achieve the above object, the utility model provides a following technical scheme:
the utility model provides a testing arrangement for detecting semiconductor device bonding strength, including the mounting panel, fixed mounting has compound cantilever beam on the mounting panel, be equipped with the fine motion mechanism that adopts air bearing and slider between the free end of compound cantilever beam and the mounting panel, fixedly connected with thrust sensor on the free end of compound cantilever beam, thrust sensor below fixedly connected with test cutter, the mounting panel has the displacement sensor who is used for measuring free end displacement variation at the free end upper portion fixed mounting of compound cantilever beam, fixedly connected with is used for detecting the contact pick-up of cutter downforce between the free end of compound cantilever beam and the stiff end.
As a further aspect of the utility model, displacement sensor measurement accuracy less than or equal to 1 um.
As a further aspect of the present invention, the displacement sensor is a LVDT micro displacement sensor or a linear grating scale.
As a further aspect of the present invention, the contact sensor includes a piezoelectric pressure sensor and a pressure-sensitive pressure sensor.
To sum up, compared with the prior art, the utility model has the following beneficial effects:
according to the invention, the displacement sensor fixed on the mounting plate and used for detecting the position of the free end of the composite cantilever beam is used for detecting the position of the test cutter in real time in the process of cracking the semiconductor material layer by the test cutter, so that the problems of excessive penetration and insufficient penetration of the test cutter are avoided, and the test failure result is avoided; meanwhile, the cutting strength of the cutter is controlled and tested through the contact sensor, so that the testing process is controllable.
Drawings
Fig. 1 is a schematic structural diagram of a testing apparatus for detecting bonding strength of a semiconductor device.
Fig. 2 is a schematic view of the contact between the cutter and the object to be tested in the testing apparatus for testing the bonding strength of the semiconductor device.
Fig. 3 is a schematic view of the position of the test tool in S2 of the test method for detecting the bonding strength of a semiconductor device.
Fig. 4 is a schematic view of the position of the test tool in S3 of the test method for detecting the bonding strength of a semiconductor device.
Fig. 5 is a schematic view of the position of the test tool in S5 of the test method for detecting the bonding strength of a semiconductor device.
Fig. 6 is a schematic view of the position of the test tool in S6 of the test method for detecting the bonding strength of a semiconductor device.
Reference numerals: the method comprises the following steps of 1-mounting plate, 2-composite cantilever beam, 3-micro-motion mechanism, 4-contact sensor, 5-thrust sensor, 6-testing cutter, 7-sample to be tested, 8-sample carrying platform, 9-semiconductor material layer, 10-detection point and 11-displacement sensor.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, rather than all embodiments, and all other embodiments obtained by a person of ordinary skill in the art without creative work belong to the protection scope of the present invention based on the embodiments of the present invention.
Example 1
As shown in FIG. 1, a testing device for detecting bonding strength of a semiconductor device comprises a mounting plate 1 for fixedly mounting the testing device, wherein the mounting plate 1 is fixedly mounted on a controllable driving device which can move along a Z axis, in the embodiment, the controllable driving device is an MFM1200L shearing force testing machine sold by Dreher precision science and technology Co., Ltd, a composite cantilever beam 2 with horizontal position offset compensation is fixedly mounted on the mounting plate 1, the composite cantilever beam 2 is in the prior art, a free end and a fixed end are arranged on the composite cantilever beam 2, a contact sensor 4 for detecting the downward pressure of a cutter is fixedly connected between the free end and the fixed end of the composite cantilever beam 2, the contact sensor 4 is a pressure-sensitive pressure sensor, the contact sensor 4 comprises a photoelectric sensor and a photoresistance probe, the contact sensor 4 detects the contact force when a blade of a testing cutter 6 contacts a sample 7 to be tested through the position change of the photoresistance probe, the restoring force of the photo-resistance probe drives the testing cutter 6 to cut the sample 7 to be tested;
as shown in fig. 2, a thrust sensor 5 for measuring the bonding strength of a sample 7 to be measured is fixedly connected to the free end of the composite cantilever beam 2, a test tool 6 is fixedly connected below the thrust sensor 5 through a screw, the test tool 6 is in the prior art, and during measurement, the test tool 6 penetrates through a semiconductor material layer 9, the test tool 6 displaces, and cuts a detection point 10, so that the strength of the detection point 10 is measured;
a micro-motion mechanism 3 is arranged between the free end of the composite cantilever beam 2 and the mounting plate 1, the connection mode of the micro-motion mechanism 3 with the composite cantilever beam 2 and the mounting plate 1 is the prior art, the micro-motion mechanism 3 comprises a slide block and an air bearing, the slide block is movably connected with the mounting plate 1, the air bearing is fixedly connected with the free end of the composite cantilever beam 2, and an air outlet of the air bearing faces to the rear side face of the slide block;
the mounting plate 1 is fixedly provided with a displacement sensor 11 for measuring the displacement variation of the free end on the upper part of the free end of the composite cantilever beam 2, the measurement precision of the displacement sensor 11 is less than or equal to 1um, and preferably, the displacement sensor 11 is an LVDT micro-displacement sensor;
preferably, the mounting plate 1 is further provided with a pressing mechanism (not shown) for fixing the free end of the composite cantilever beam 2, and the pressing mechanism is in the prior art;
preferably, sample stage 8 is fixedly attached to a driving device having a function of moving along a plane, which in this embodiment is a table of an MFM1200L shear test machine.
A method for detecting the bonding strength of a semiconductor device based on the testing device for the bonding strength of the semiconductor device comprises the following steps:
s1, connecting an air interface to enable the air bearing to be in a working state, wherein the fixed end and the free end of the composite cantilever beam 2 are separated, and the free end of the composite cantilever beam 2 can slide up and down;
s2, the testing device descends along the Z axis through the controllable driving equipment, whether the testing tool 6 reaches the semiconductor material layer 9 or not is judged through the signal of the contact sensor 4, after the testing tool 6 reaches the semiconductor material layer 9, the controllable driving equipment is controlled to continue to move along the Z axis until the contact sensor 4 reaches a preset pressure value, the testing device stops moving, and the displacement sensor 11 records the current position of the free end of the composite cantilever beam 2;
s3, controlling a sample carrying platform 8 bearing a sample to be tested to reciprocate, enabling a test tool 6 and the sample to be tested 7 to generate relative displacement, enabling the test tool 6 to cut the protective layer on the surface of the semiconductor material layer 9, enabling a blade of the test tool 6 to penetrate through the protective layer, simultaneously detecting the position change of the free end of the composite cantilever beam 2 in real time by a displacement sensor 11 in the cutting process, closing an air interface when the displacement of the free end of the composite cantilever beam 2 reaches the cutting depth H1 (the penetrating amount of the semiconductor material layer), enabling an air bearing to be in a closed state, and enabling the free end of the composite cantilever beam 2 to be tightly pressed on the mounting plate 1 through a pressing mechanism fixedly mounted on the mounting plate;
s4, controlling the controllable driving device to move the testing device up a set distance H2 (the set testing height parameter of the welding spot strength test) along the Z axis, wherein the distance is the set testing height parameter of the welding spot strength test;
and S5, controlling the sample carrying platform 8 to move, enabling the blade of the testing cutter 6 to move horizontally relative to the semiconductor material layer 9, enabling the blade front side of the testing cutter 6 to shear the detection point 10, and completing the bonding point strength test.
Example 2
As shown in fig. 1, a testing apparatus for testing the bonding strength of a semiconductor device includes a mounting plate 1 for fixedly mounting the testing apparatus, the mounting plate 1 being fixedly mounted on a controllable driving device movable along a Z-axis, which, in this embodiment, the controllable driving equipment model is an MFM1200L shearing force testing machine sold by Delheim precision technology, Inc., a composite cantilever beam 2 with horizontal position offset compensation is fixedly installed on a mounting plate 1, the composite cantilever beam 2 is the prior art, a free end and a fixed end are arranged on the composite cantilever beam 2, a contact sensor 4 for detecting the downward pressure of a cutter is fixedly connected between the free end and the fixed end of the composite cantilever beam 2, the contact sensor 4 is a piezoelectric pressure sensor, the contact sensor 4 detects the contact force between a testing cutter 6 and a sample 7 to be tested through the pressure sensor, and the driving force generated in the process of recovering the initial state through the optical pressure sensor drives the testing cutter 6 to cut the sample 7 to be tested;
as shown in fig. 2, a thrust sensor 5 for measuring the bonding strength of a sample 7 to be measured is fixedly connected to the free end of the composite cantilever beam 2, a test tool 6 is fixedly connected below the thrust sensor 5 through a screw, the test tool 6 is in the prior art, and during measurement, the test tool 6 penetrates through a semiconductor material layer 9, the test tool 6 displaces, and cuts a detection point 10, so that the strength of the detection point 10 is measured;
a micro-motion mechanism 3 is arranged between the free end of the composite cantilever beam 2 and the mounting plate 1, the connection mode of the micro-motion mechanism 3 with the composite cantilever beam 2 and the mounting plate 1 is the prior art, the micro-motion mechanism 3 comprises a slide block and an air bearing, the slide block is movably connected with the mounting plate 1, the air bearing is fixedly connected with the free end of the composite cantilever beam 2, and an air outlet of the air bearing faces to the rear side face of the slide block;
the mounting plate 1 is fixedly provided with a displacement sensor 11 for measuring the displacement variation of the free end on the upper part of the free end of the composite cantilever beam 2, the measurement precision of the displacement sensor 11 is less than or equal to 1um, and preferably, the displacement sensor 11 is a linear grating ruler;
preferably, the mounting plate 1 is further provided with a pressing mechanism (not shown) for fixing the free end of the composite cantilever beam 2, and the pressing mechanism is in the prior art;
preferably, the sample carrier 8 is fixedly connected to a worktable, an ultrasonic generator is arranged on the worktable, and a probe of the ultrasonic generator is fixedly connected to one side of the test tool 6.
A method for detecting the bonding strength of a semiconductor device based on the testing device for the bonding strength of the semiconductor device comprises the following steps:
s1, connecting an air interface to enable the air bearing to be in a working state, wherein the fixed end and the free end of the composite cantilever beam 2 are separated, and the free end of the composite cantilever beam 2 can slide up and down;
s2, the testing device descends along the Z axis through the controllable driving equipment, whether the testing tool 6 reaches the semiconductor material layer 9 or not is judged through the signal of the contact sensor 4, after the testing tool 6 reaches the semiconductor material layer 9, the controllable driving equipment is controlled to continue to move along the Z axis until the contact sensor 4 reaches a preset pressure value, the testing device stops moving, and the displacement sensor 11 records the current position of the free end of the composite cantilever beam 2;
s3, turning on an ultrasonic generator, driving a test cutter 6 to vibrate by a probe of the ultrasonic generator so that the test cutter 6 cuts the protective layer on the surface of the semiconductor material layer 9, thereby enabling a blade of the test cutter 6 to penetrate through the protective layer, simultaneously detecting the position change of the free end of the composite cantilever beam 2 in real time by a displacement sensor 11 in the cutting process, closing an air interface when the displacement of the free end of the composite cantilever beam 2 reaches the cutting depth H1 (the penetrating amount of the semiconductor material layer), enabling an air bearing to be in a closed state, and pressing the free end of the composite cantilever beam 2 on the mounting plate 1 through a pressing mechanism fixedly mounted on the mounting plate 1;
s4, controlling the controllable driving device to move the testing device up a set distance H2 (the set testing height parameter of the welding spot strength test) along the Z axis, wherein the distance is the set testing height parameter of the welding spot strength test;
and S5, controlling the sample carrying platform 8 to move, enabling the blade of the testing cutter 6 to move horizontally relative to the semiconductor material layer 9, enabling the blade front side of the testing cutter 6 to shear the detection point 10, and completing the bonding point strength test.
To sum up, the utility model discloses a theory of operation is:
be equipped with the displacement sensor 11 that is used for detecting 2 free end positions of compound cantilever beam on the mounting panel 1, at the in-process that test cutter 6 splits semiconductor material layer 9, the position of real-time detection test cutter 6 has guaranteed that test cutter 6 can not produce excessively to pierce through and pierce through not enough problem to avoided the result of test failure, detected and controlled the cutting dynamics of test cutter 6 through contact pick up 4 simultaneously, makeed the testing process controllable.
It should be particularly noted that the composite cantilever beam and the micro-motion mechanism are applied in the prior art, the position of the testing tool is detected in real time through the displacement sensor, and the cutting force is controlled through the contact sensor, which is an innovative point of the present application, and the problem that the semiconductor device bonding strength testing device in the prior art is prone to measurement failure is effectively solved.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (5)
1. The utility model provides a testing arrangement for detecting semiconductor device bonding strength, a serial communication port, including mounting panel (1), fixed mounting has compound cantilever beam (2) on mounting panel (1), be equipped with fine motion mechanism (3) between free end and mounting panel (1) of compound cantilever beam (2), fixedly connected with thrust sensor (5) on the free end of compound cantilever beam (2), thrust sensor (5) below fixedly connected with test cutter (6), mounting panel (1) has displacement sensor (11) that are used for measuring free end displacement variation at the free end upper portion fixed mounting of compound cantilever beam (2), fixedly connected with is used for detecting contact sensor (4) of cutter holding down force between the free end of compound cantilever beam (2) and the stiff end.
2. The test apparatus for detecting bonding strength of semiconductor devices according to claim 1, wherein the test accuracy of the displacement sensor (11) is 1um or less.
3. The test apparatus for testing bonding strength of semiconductor devices according to claim 2, wherein the displacement sensor (11) is an LVDT micro-displacement sensor.
4. The test apparatus for testing bonding strength of semiconductor devices according to claim 2, wherein the displacement sensor (11) is a linear grating scale.
5. The test apparatus for testing bonding strength of semiconductor devices according to any of claims 1 to 4, wherein the contact sensor (4) comprises a piezoelectric pressure sensor and a pressure-sensitive pressure sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201920523145.8U CN209992365U (en) | 2019-04-17 | 2019-04-17 | Testing device for detecting bonding strength of semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201920523145.8U CN209992365U (en) | 2019-04-17 | 2019-04-17 | Testing device for detecting bonding strength of semiconductor device |
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| CN209992365U true CN209992365U (en) | 2020-01-24 |
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| CN201920523145.8U Expired - Fee Related CN209992365U (en) | 2019-04-17 | 2019-04-17 | Testing device for detecting bonding strength of semiconductor device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109932315A (en) * | 2019-04-17 | 2019-06-25 | 深圳市德瑞茵精密科技有限公司 | For detecting the test device and test method of semiconductor devices bond strength |
| CN113390732A (en) * | 2021-07-08 | 2021-09-14 | 深圳市德瑞茵智能科技有限公司 | High-thrust welding spot strength shearing force testing device |
| CN114002086A (en) * | 2021-10-22 | 2022-02-01 | 深圳市德瑞茵精密科技有限公司 | Composite test module device |
-
2019
- 2019-04-17 CN CN201920523145.8U patent/CN209992365U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109932315A (en) * | 2019-04-17 | 2019-06-25 | 深圳市德瑞茵精密科技有限公司 | For detecting the test device and test method of semiconductor devices bond strength |
| CN109932315B (en) * | 2019-04-17 | 2024-05-31 | 深圳市德瑞茵精密科技有限公司 | Testing device and testing method for detecting bonding strength of semiconductor device |
| CN113390732A (en) * | 2021-07-08 | 2021-09-14 | 深圳市德瑞茵智能科技有限公司 | High-thrust welding spot strength shearing force testing device |
| CN114002086A (en) * | 2021-10-22 | 2022-02-01 | 深圳市德瑞茵精密科技有限公司 | Composite test module device |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200124 Termination date: 20200417 |
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| CF01 | Termination of patent right due to non-payment of annual fee |