CN209798158U - Silicon carbide single crystal growth device - Google Patents
Silicon carbide single crystal growth device Download PDFInfo
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- CN209798158U CN209798158U CN201920560860.9U CN201920560860U CN209798158U CN 209798158 U CN209798158 U CN 209798158U CN 201920560860 U CN201920560860 U CN 201920560860U CN 209798158 U CN209798158 U CN 209798158U
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- crucible
- connecting rod
- single crystal
- silicon carbide
- carbide single
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 48
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 239000013078 crystal Substances 0.000 title claims abstract description 43
- 238000010438 heat treatment Methods 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 31
- 230000008569 process Effects 0.000 claims abstract description 26
- 230000007246 mechanism Effects 0.000 claims abstract description 17
- 239000003507 refrigerant Substances 0.000 claims abstract description 8
- 230000000149 penetrating effect Effects 0.000 claims abstract description 6
- 238000001816 cooling Methods 0.000 claims abstract description 4
- 238000004321 preservation Methods 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 15
- 229910002804 graphite Inorganic materials 0.000 description 15
- 239000010439 graphite Substances 0.000 description 15
- 239000007789 gas Substances 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 6
- 239000002994 raw material Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a silicon carbide single crystal growth device, which comprises a working cavity, a lifting connecting rod penetrating the working cavity, a first driving mechanism for driving the connecting rod to lift, a crucible arranged in the working cavity and a heating mechanism for heating the crucible; the crucible comprises a crucible cover fixedly arranged at the bottom of the connecting rod and a crucible body detachably connected below the crucible cover; the connecting rod comprises a rod body, a first channel which is arranged on the rod body and is used for leading in and out a refrigerant, and a second channel which is arranged on the rod body and is used for leading in process gas; the first channel and the second channel are mutually isolated, and the second channel is communicated with the working cavity; the connecting rod is used for cooling the crucible cover through a refrigerant and/or process gas; the working cavity further comprises an air outlet. The utility model relates to a carborundum single crystal growth device has optimized heat-conduction route, makes the heat only pass through the transmission of crucible cover, changes the realization temperature field requirement of high-end-up, has improved the growth quality of carborundum single crystal.
Description
Technical Field
the utility model relates to a silicon carbide single crystal growth device.
Background
The physical vapor transport method (PVT method) is a main technical method for growing silicon carbide single crystals, and the method is characterized in that a silicon carbide polycrystalline raw material is arranged at the bottom of a graphite crucible body, the graphite crucible body is covered by a graphite crucible cover to form a closed space, silicon carbide seed crystals are arranged on the lower surface of the graphite crucible cover, the system formed by the graphite crucible body and the graphite crucible cover is heated, so that the silicon carbide polycrystalline raw material in the graphite crucible body is sublimated, a proper temperature gradient is maintained between the silicon carbide polycrystalline raw material and the silicon carbide seed crystals, and the sublimated silicon carbide particles can be deposited and grown on the silicon carbide seed crystals, and then the silicon carbide single crystals are obtained. The technical method requires that the temperature at the bottom of the graphite crucible body is higher than that of the crucible cover at the upper part of the graphite crucible body so as to obtain a temperature field with a high lower part and a low upper part and meet the growth requirement of the silicon carbide single crystal.
The existing crucible for growing the silicon carbide single crystal generally installs a graphite crucible body on a crucible supporting rod, so that the heat conduction at the bottom of the graphite crucible can be dissipated due to the heat conduction of the crucible supporting rod, the energy waste of heating power is required to maintain the process temperature at the bottom of the graphite crucible, and more importantly, the uniformity of the temperature at the bottom of the graphite crucible is difficult to realize, and the growth of the silicon carbide single crystal is influenced.
Disclosure of Invention
The utility model aims at providing a carborundum single crystal growth device has optimized graphite crucible's heat-conduction route, makes easily obtain the temperature field of low level down in the graphite crucible, is favorable to the growth of carborundum single crystal, and energy saving and consumption reduction has improved the growth quality of carborundum single crystal.
In order to achieve the above purpose, the utility model adopts the technical scheme that:
A silicon carbide single crystal growth device comprises a working cavity, a connecting rod capable of lifting and penetrating through the working cavity, a first driving mechanism for driving the connecting rod to lift, a crucible arranged in the working cavity and a heating mechanism for heating the crucible;
The crucible comprises a crucible cover fixedly arranged at the bottom of the connecting rod and a crucible body detachably connected below the crucible cover;
the connecting rod comprises a rod body, a first channel which is arranged on the rod body and used for leading in and out a refrigerant, and a second channel which is arranged on the rod body and used for leading in process gas; the first channel and the second channel are mutually isolated, and the second channel is communicated with the working cavity; the connecting rod is used for cooling the crucible cover through the refrigerant and/or the process gas;
The working cavity further comprises an air outlet.
Preferably, the first channel is an annular cavity, and a feed inlet and a discharge outlet are formed in the upper end of the annular cavity.
More preferably, the second channel is a cylindrical cavity, and a process air hole communicated with the working cavity is formed in the side portion of the bottom end of the cylindrical cavity.
still further preferably, the connecting rod, the annular cavity and the cylindrical cavity all extend coaxially.
Still further preferably, there are a plurality of the process air holes, and the process air holes are uniformly spaced and circumferentially arranged.
Still further preferably, the crucible cover is arranged at the bottom end of the cylindrical cavity, and the device further comprises an infrared thermometer for measuring the temperature of the crucible cover along the axial lead direction of the cylindrical cavity.
Preferably, the connecting rod can be arranged in the working cavity in a penetrating manner in a rotating manner around the axis line direction of the connecting rod, and the device further comprises a second driving mechanism for driving the connecting rod to rotate.
Preferably, the heating mechanism comprises a heating cylinder body annularly arranged on the periphery of the outer side of the crucible and a heat preservation cover which is sleeved on the periphery of the outer side of the heating cylinder body and has an upward opening, and the heating temperature of the heating cylinder body is gradually increased from top to bottom.
More preferably, the heating cylinder extends coaxially with the crucible.
Preferably, the connecting rod and the crucible cover are mutually heat-conducting, and the crucible cover and the crucible body are mutually heat-insulated.
Because of above-mentioned technical scheme's application, compared with the prior art, the utility model have the following advantage: the utility model relates to a silicon carbide single crystal growth device, which not only avoids the problems that the heat at the bottom of the crucible body is easy to dissipate, the heating power needs to be increased to maintain the energy consumption increase caused by the process temperature at the bottom of the crucible, the uniformity of the temperature at the bottom of the crucible body is difficult to realize, the growth quality of the silicon carbide single crystal is influenced and the like because the connecting rod is arranged on the crucible cover; meanwhile, the heat transfer direction of the crucible is improved, the heat conduction path of the crucible is optimized, heat can be only transferred upwards through the crucible cover, the requirements of a temperature field with a high lower part and a low upper part are more easily met, energy is saved, consumption is reduced, and the growth quality of the silicon carbide single crystal is improved.
Drawings
Fig. 1 is a schematic structural diagram of the device of the present invention.
Wherein: 1. a working cavity; 2. a connecting rod; 21. a rod body; 22. a first channel; 23. a second channel; 3. a first drive mechanism; 4. a crucible; 41. a crucible cover; 42. a crucible body; 5. a heating mechanism; 51. heating the cylinder; 52. a heat-preserving cover; 6. an air outlet; 7. a feed inlet; 8. a discharge port; 9. a process air hole; 10. an infrared thermometer; 11. a second drive mechanism; 12. a cover plate; 13. silicon carbide seed crystals; 14. polycrystalline silicon carbide feedstock.
Detailed Description
The technical solution of the present invention will be further explained with reference to the accompanying drawings.
referring to fig. 1, the silicon carbide single crystal growth apparatus includes a working chamber 1, a liftable connecting rod 2 penetrating the working chamber 1, a first driving mechanism 3 for driving the connecting rod 2 to ascend and descend, a crucible 4 arranged in the working chamber 1, and a heating mechanism 5 for heating the crucible 4. The upper part of the working cavity 1 is provided with a cover plate 12, when raw materials need to be filled in or finished products need to be taken out, the cover plate 12 is opened, and the crucible 4 is lifted upwards out of the working cavity 1. In the present embodiment, the heating mechanism 5 includes a heating cylinder 51 disposed around the outer peripheral portion of the crucible 4, and a heat insulating cover 52 fitted over the outer peripheral portion of the heating cylinder 51 and having an upward opening. The heating temperature of the heating cylinder 51 is gradually increased from top to bottom to provide a high-low temperature field for the growth of the silicon carbide single crystal. The heating cylinder 51 extends coaxially with the crucible 4 with its axis parallel to the vertical direction. The inner peripheral portion of the heating cylinder 51 and the outer peripheral portion of the crucible 4 are spaced apart from each other, and the outer peripheral portion of the heating cylinder 51 is attached to the inner peripheral portion of the heat retaining cover 52. The heating cylinder 51 may be resistance heating or induction heating.
The crucible 4 comprises a crucible cover 41 fixedly arranged at the bottom of the connecting rod 2 and a crucible body 42 detachably connected below the crucible cover 41. In the present embodiment, the connecting rod 2 and the crucible cover 41 are thermally conductive to each other, and the crucible cover 41 and the crucible body 42 are thermally insulated from each other. Through the arrangement, the connecting rod 2 conducts heat for the crucible cover 41, the heat conduction direction of the crucible 4 is improved, the heat conduction path of the crucible 4 is optimized, the heat can be only upwards transmitted through the crucible cover 41, the requirements of a temperature field with a high lower part and a low upper part are easier to realize, the energy is saved, the consumption is reduced, and the growth quality of the silicon carbide single crystal is improved.
The connecting rod 2 comprises a rod body 21, a first channel 22 arranged on the rod body 21 and used for introducing a cooling medium, and a second channel 23 arranged on the rod body 21 and used for introducing a process gas; the first passage 22 and the second passage 23 are mutually isolated, and the second passage 23 is communicated with the working cavity 1. The connecting rod 2 is used for cooling the crucible cover 41 by a refrigerant and/or a process gas. In this embodiment, the cooling medium is liquid cooling water, the process gas is argon gas, and is used for adjusting the pressure and promoting the growth of the silicon carbide single crystal, and in order to maintain the gas circulation, the working chamber 1 further includes a gas outlet 6 for letting in the process gas.
In this embodiment, the first channel 22 is an annular cavity, and the upper end of the annular cavity is provided with a feed inlet 7 and a discharge outlet 8. The second channel 23 is a cylindrical cavity, and the side part of the bottom end of the cylindrical cavity is provided with a process air hole 9 communicated with the working cavity 1. The connecting rod 2, the annular cavity and the cylindrical cavity extend coaxially, and the axial lead of the connecting rod is parallel to the vertical direction.
In the present embodiment, there are a plurality of process air holes 9, and the plurality of process air holes 9 are uniformly spaced and circumferentially arranged. The connecting rod 2 comprises a horizontal plate arranged at the lower end of the connecting rod, the annular cavity is positioned above the horizontal plate, the cylindrical cavity penetrates through the horizontal plate, and the process air hole 9 is formed in the horizontal plate. Through the arrangement, the crucible cover 41 is exposed at the bottom end of the cylindrical cavity, the silicon carbide single crystal growth device further comprises an infrared thermometer 10 for measuring the temperature of the crucible cover 41 along the axial lead direction of the cylindrical cavity, and the real-time temperature of the crucible cover 41 can be measured more accurately through the structure, so that the temperature field can be adjusted conveniently.
the connecting rod 2 can rotate around the axis line direction of the connecting rod and penetrate through the working cavity 1, and the silicon carbide single crystal growing device further comprises a second driving mechanism 11 for driving the connecting rod 2 to rotate.
The growth point is gradually reduced along with the growth of the silicon carbide single crystal, the temperature corresponding to the growth point is gradually increased due to the high temperature and the low temperature of the temperature field, and the temperature of the growth point is correspondingly reduced by lifting the crucible 4; in the growth process, the crucible 4 is kept to rotate around the axis line direction of the crucible, so that the uniformity of the temperature is improved, and the growth quality of the silicon carbide single crystal is improved.
The following specifically explains the working process of this embodiment:
Opening the cover plate 12, lifting the crucible 4 out of the working cavity 1, opening the crucible 4, loading the silicon carbide seed crystal 13 on the lower surface of the crucible cover 41, and loading the silicon carbide polycrystalline raw material 14 in the crucible body 42; the crucible 4 is loaded, and is lowered into the working cavity 1, and the cover plate 12 is closed;
Controlling the heating cylinder 51 to start heating, monitoring the temperature of the crucible cover 41 through the infrared thermometer 10, and introducing a proper amount of process gas and refrigerant according to the requirement to keep the temperature measured by the infrared thermometer 10 at the required temperature;
In the growth process of the silicon carbide single crystal, the rotation of the crucible 4 is kept, so that the growth temperature in the crucible 4 is more uniform; while the crucible 4 is lifted upward in accordance with the growth rate of the silicon carbide single crystal so that the height of the growing point is kept constant.
The above embodiments are only for illustrating the technical concept and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and the protection scope of the present invention can not be limited thereby, and all equivalent changes or modifications made according to the spirit of the present invention should be covered by the protection scope of the present invention.
Claims (10)
1. A silicon carbide single crystal growth apparatus characterized in that: the crucible heating device comprises a working cavity, a lifting connecting rod penetrating through the working cavity, a first driving mechanism for driving the connecting rod to lift, a crucible arranged in the working cavity and a heating mechanism for heating the crucible;
the crucible comprises a crucible cover fixedly arranged at the bottom of the connecting rod and a crucible body detachably connected below the crucible cover;
The connecting rod comprises a rod body, a first channel which is arranged on the rod body and used for leading in and out a refrigerant, and a second channel which is arranged on the rod body and used for leading in process gas; the first channel and the second channel are mutually isolated, and the second channel is communicated with the working cavity; the connecting rod is used for cooling the crucible cover through the refrigerant and/or the process gas;
The working cavity further comprises an air outlet.
2. A silicon carbide single crystal growth apparatus according to claim 1, wherein: the first channel is an annular cavity, and a feed inlet and a discharge outlet are formed in the upper end of the annular cavity.
3. A silicon carbide single crystal growth apparatus according to claim 2, wherein: the second channel is a cylindrical cavity, and a process air hole communicated with the working cavity is formed in the side portion of the bottom end of the cylindrical cavity.
4. a silicon carbide single crystal growth apparatus according to claim 3, wherein: the connecting rod, the annular cavity and the cylindrical cavity all extend coaxially.
5. A silicon carbide single crystal growth apparatus according to claim 3, wherein: the process air holes are arranged in a surrounding mode at even intervals along the circumferential direction.
6. A silicon carbide single crystal growth apparatus according to claim 3, wherein: the crucible cover is arranged at the bottom end of the cylindrical cavity, and the device further comprises an infrared thermometer for measuring the temperature of the crucible cover along the axial lead direction of the cylindrical cavity.
7. a silicon carbide single crystal growth apparatus according to claim 1, wherein: the connecting rod can be arranged in the working cavity in a penetrating mode in a rotating mode around the axis line direction of the connecting rod, and the device further comprises a second driving mechanism used for driving the connecting rod to rotate.
8. a silicon carbide single crystal growth apparatus according to claim 1, wherein: the heating mechanism comprises a heating cylinder body and a heat preservation cover, the heating cylinder body is arranged on the periphery of the outer side of the crucible in a surrounding mode, the heat preservation cover is sleeved on the periphery of the outer side of the heating cylinder body, the opening of the heat preservation cover is upward, and the heating temperature of the heating cylinder body is gradually increased from top to bottom.
9. A silicon carbide single crystal growth apparatus according to claim 8, wherein: the heating cylinder extends coaxially with the crucible.
10. A silicon carbide single crystal growth apparatus according to claim 1, wherein: the connecting rod with the crucible cover conducts heat mutually, and the crucible cover and the crucible body insulate heat mutually.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920560860.9U CN209798158U (en) | 2019-04-23 | 2019-04-23 | Silicon carbide single crystal growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920560860.9U CN209798158U (en) | 2019-04-23 | 2019-04-23 | Silicon carbide single crystal growth device |
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| Publication Number | Publication Date |
|---|---|
| CN209798158U true CN209798158U (en) | 2019-12-17 |
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| CN201920560860.9U Active CN209798158U (en) | 2019-04-23 | 2019-04-23 | Silicon carbide single crystal growth device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109913951A (en) * | 2019-04-23 | 2019-06-21 | 江苏星特亮科技有限公司 | Silicon carbide single crystal growth device |
| CN114411245A (en) * | 2021-12-29 | 2022-04-29 | 北京天科合达半导体股份有限公司 | Growth device and growth method of silicon carbide single crystal |
-
2019
- 2019-04-23 CN CN201920560860.9U patent/CN209798158U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109913951A (en) * | 2019-04-23 | 2019-06-21 | 江苏星特亮科技有限公司 | Silicon carbide single crystal growth device |
| CN114411245A (en) * | 2021-12-29 | 2022-04-29 | 北京天科合达半导体股份有限公司 | Growth device and growth method of silicon carbide single crystal |
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