CN109913951A - Silicon carbide single crystal growth device - Google Patents
Silicon carbide single crystal growth device Download PDFInfo
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- CN109913951A CN109913951A CN201910328574.4A CN201910328574A CN109913951A CN 109913951 A CN109913951 A CN 109913951A CN 201910328574 A CN201910328574 A CN 201910328574A CN 109913951 A CN109913951 A CN 109913951A
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- China
- Prior art keywords
- crucible
- silicon carbide
- connecting rod
- working cavity
- growth device
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 38
- 239000013078 crystal Substances 0.000 title abstract description 7
- 238000010438 heat treatment Methods 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 18
- 230000007246 mechanism Effects 0.000 claims abstract description 17
- 230000008569 process Effects 0.000 claims abstract description 12
- 239000003507 refrigerant Substances 0.000 claims abstract description 10
- 238000001816 cooling Methods 0.000 claims abstract description 3
- 238000009413 insulation Methods 0.000 claims description 5
- 229910052571 earthenware Inorganic materials 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 19
- 229910002804 graphite Inorganic materials 0.000 description 15
- 239000010439 graphite Substances 0.000 description 15
- 239000007789 gas Substances 0.000 description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 8
- 239000002994 raw material Substances 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- 229910003978 SiClx Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a silicon carbide single crystal growth device which comprises a working cavity, a liftable connecting rod penetrating the working cavity, a first driving mechanism for driving the connecting rod to ascend and descend, a crucible arranged in the working cavity and a heating mechanism for heating the crucible, wherein the connecting rod is arranged in the working cavity in a penetrating mode; the crucible comprises a crucible cover fixedly arranged at the bottom of the connecting rod and a crucible body detachably connected below the crucible cover; the connecting rod comprises a rod body, a first channel which is arranged on the rod body and is used for leading in and out a refrigerant, and a second channel which is arranged on the rod body and is used for leading in process gas; the first channel and the second channel are mutually isolated, and the second channel is communicated with the working cavity; the connecting rod is used for cooling the crucible cover through a refrigerant and/or process gas; the working cavity further comprises an air outlet. The silicon carbide single crystal growth device optimizes the heat conduction path, so that heat is only transmitted through the crucible cover, the requirements of a temperature field with a high lower part and a low upper part are more easily met, and the growth quality of the silicon carbide single crystal is improved.
Description
Technical field
The present invention relates to a kind of silicon carbide monocrystal growth devices.
Background technique
Physical carbon burdening (PVT method) has become the main technique methods of silicon carbide monocrystal growth, and this method is by carbon
SiClx polycrystal raw material is mounted in graphite crucible bottom, is covered graphite crucible with graphite crucible lid, and formation one is closed
Space, graphite crucible lid lower surface are equipped with silicon carbide seed, pass through the system to graphite crucible, graphite crucible lid composition
It is heated, so that the silicon carbide polycrystal raw material in graphite crucible is distilled, and maintain silicon carbide polycrystal raw material and silicon carbide seed
Intergranular has a suitable temperature gradient, carborundum particle after distillation will in silicon carbide seed deposition growing, to obtain
Single-crystal silicon carbide.This technical method requires the temperature of graphite crucible bottom to be higher than graphite crucible upper portion crucible lid
Temperature meet silicon carbide monocrystal growth needs to obtain lower high low temperature field.
The existing crucible for silicon carbide monocrystal growth, is usually mounted on crucible pressure pin for graphite crucible
On, it is dissipated in this way since the heat transfer of crucible pressure pin will conduct the heat of graphite crucible bottom, to maintain graphite crucible
Bottom technological temperature will increase heating power waste of energy, and more important is be difficult to realize the uniform of graphite crucible bottom temp
Property, influence the growth of single-crystal silicon carbide.
Summary of the invention
The object of the present invention is to provide a kind of silicon carbide monocrystal growth devices, optimize the heat conduction path of graphite crucible,
Make to be easily obtained lower high low temperature field in graphite crucible, is conducive to the growth of single-crystal silicon carbide, it is energy-saving, improve carbon
The growth quality of SiClx monocrystalline.
In order to achieve the above objectives, the technical solution adopted by the present invention is that:
A kind of silicon carbide monocrystal growth device, including working cavity, the liftable connecting rod being arranged in the working cavity,
For driving the first driving mechanism of connecting rod lifting, the crucible in the working cavity and for for the crucible
The heating mechanism of heating；
The crucible includes the crucible cover for being fixedly arranged on the connecting rod bottom, the earthenware being removably attachable to below the crucible cover
Crucible ontology；
The connecting rod includes bar body, the first passage for being passed through pass-out refrigerant being opened in the bar body, opens up
In the second channel for being used to be passed through process gas in the bar body；The first passage and the second channel mutually every
Disconnected, the second channel is connected to the working cavity；The connecting rod, for passing through the refrigerant and/or the process gas
Body is crucible cover cooling；
The working cavity further includes gas outlet.
Preferably, the first passage is annular housing, and the upper end of the annular housing offers inlet port and outlet port.
It is highly preferred that the second channel is cylindrical chamber, the bottom end side of the cylindrical chamber is offered and the work
Make the air vent of craft of cavity connection.
It is further preferred that the connecting rod, the annular housing, the cylindrical chamber coaxially extend.
It is further preferred that the air vent of craft has multiple, the evenly spaced circumferentially side of multiple air vent of craft
To around arrangement.
It is further preferred that the crucible cover is set to the bottom end of the cylindrical chamber, described device further includes for edge
The direction of axis line of the cylindrical chamber measures the infrared temperature instrument of the crucible cover temperature.
Preferably, the connecting rod can be arranged in the working cavity around what self-axis line direction rotated, the dress
Setting further includes the second driving mechanism for driving connecting rod rotation.
Preferably, the heating mechanism includes being located on the heating cylinder of circumference on the outside of the crucible, being sheathed on described add
The heating temperature of the insulation cover of circumference and opening upwards on the outside of hot cylinder, the heating cylinder is gradually increased from top to bottom.
It is highly preferred that the heating cylinder coaxially extends with the crucible.
Preferably, the connecting rod and the crucible cover are mutually thermally conductive, the crucible cover and the crucible body mutually every
Heat.
Due to the application of the above technical scheme, compared with the prior art, the invention has the following advantages: a kind of carbon of the present invention
SiClx single-crystal growing apparatus not only avoids and connecting rod is arranged in crucible body by being arranged connecting rod on crucible cover
Crucible body bottom heat caused by upper easily dissipates, needs to increase heating power to maintain energy caused by crucible bottom technological temperature
Consumption increase, influences the problems such as growth quality of single-crystal silicon carbide at the uniformity for being difficult to realize crucible body bottom temp；Simultaneously also
The direction for improving crucible heat transfer, optimizes the heat conduction path of crucible, transmit heat can only by crucible cover upwards, be easier to
Realize that lower high low temperature field requires, it is energy-saving, improve the growth quality of single-crystal silicon carbide.
Detailed description of the invention
Attached drawing 1 is the structural schematic diagram of apparatus of the present invention.
Wherein: 1, working cavity；2, connecting rod；21, bar body；22, first passage；23, second channel；3, the first driving
Mechanism；4, crucible；41, crucible cover；42, crucible body；5, heating mechanism；51, heating cylinder；52, insulation cover；6, gas outlet；
7, feed inlet；8, discharge port；9, air vent of craft；10, infrared temperature instrument；11, the second driving mechanism；12, cover board；13, silicon carbide
Seed crystal；14, silicon carbide polycrystal raw material.
Specific embodiment
The technical solution of the present invention will be further described below with reference to the accompanying drawings.
It is shown in Figure 1, a kind of above-mentioned silicon carbide monocrystal growth device, including working cavity 1, liftable it is arranged in work
Make the connecting rod 2 in cavity 1, the first driving mechanism 3 for the lifting of drive connection bar 2, the crucible 4 in working cavity 1
With the heating mechanism 5 for being heated for crucible 4.1 top of working cavity be equipped with cover board 12, when need charging feedstock or take out finished product
When, cover board 12 is opened, crucible 4 is lifted up out working cavity 1.In the present embodiment, heating mechanism 5 includes being located on
The heating cylinder 51 of 4 outside circumference of crucible, the insulation cover 52 for being sheathed on 51 outside circumference of heating cylinder and opening upwards.The heating
The heating temperature of cylinder 51 is gradually increased from top to bottom, to provide the lower high low temperature field for silicon carbide monocrystal growth.
Heating cylinder 51 and the coaxial extension of crucible 4, axis parallel is in vertical direction.The inside circumference and crucible 4 of heating cylinder 51
Outside circumference between gap distribution, the outside circumference of heating cylinder 51 is attached at the inside circumference of insulation cover 52.Heating cylinder
51 can be resistance heating or induction heating.
Above-mentioned crucible 4 includes the crucible cover 41 for being fixedly arranged on 2 bottom of connecting rod, is removably attachable to 41 lower section of crucible cover
Crucible body 42.In the present embodiment, connecting rod 2 and crucible cover 41 are mutually thermally conductive, crucible cover 41 and crucible body 42 mutually every
Heat.It is arranged by this, connecting rod 2 is that crucible cover 41 conducts heat, improves the direction of the heat transfer of crucible 4, optimizes crucible 4
Heat conduction path transmit heat can only by crucible cover 41 upwards, be easier to realize that lower high low temperature field requires, energy conservation drop
Consumption, improves the growth quality of single-crystal silicon carbide.
Above-mentioned connecting rod 2 includes bar body 21, the first passage for being used to be passed through pass-out refrigerant being opened in bar body 21
22, the second channel 23 for being used to be passed through process gas being opened in bar body 21；First passage 22 and second channel 23 are mutual
Partition, second channel 23 are connected to working cavity 1.Connecting rod 2 is used to through refrigerant and/or process gas be the drop of crucible cover 41
Temperature.In the present embodiment, refrigerant is liquid cooled water, and process gas is argon gas, for pressure regulation and promotes silicon carbide monocrystal growth,
In order to keep the circulation of gas, working cavity 1 further includes the gas outlet 6 for pass-out process gas.
In the present embodiment, first passage 22 is annular housing, and the upper end of annular housing offers feed inlet 7 and discharge port
8.Second channel 23 is cylindrical chamber, and the bottom end side of cylindrical chamber offers the air vent of craft 9 being connected to working cavity 1.Even
Extension bar 2, annular housing, cylindrical chamber coaxially extend, and axis parallel is in vertical direction.
In the present embodiment, air vent of craft 9 has multiple, and multiple air vent of craft 9 are evenly spaced along the circumferential direction around row
Column.Connecting rod 2 includes the level board set on its lower end, and annular housing is located at the top of level board, and cylindrical chamber passes through the level
Plate, air vent of craft 9 are then opened in the level board.It is arranged by this, crucible cover 41 is made to be exposed to the bottom end of cylindrical chamber, on
Stating a kind of silicon carbide monocrystal growth device further includes for the red of direction of axis line measurement 41 temperature of crucible cover along cylindrical chamber
Outer thermo detector 10 can measure the real time temperature of crucible cover 41, accurately more with this configuration convenient for the adjusting in temperature field.
Above-mentioned connecting rod 2 can be arranged in working cavity 1 around what self-axis line direction rotated, a kind of above-mentioned silicon carbide list
Crystals growth device further includes the second driving mechanism 11 rotated for drive connection bar 2.
With the growth of single-crystal silicon carbide, growing point is gradually decreased, and due to high low at a temperature of temperature field, growing point institute is right
The temperature answered gradually rises, by promoting crucible 4 come the corresponding temperature for reducing growing point；During the growth process, by making earthenware
Crucible 4 keeps rotating around self-axis line direction, improves the uniformity of temperature, improves the growth quality of single-crystal silicon carbide.
The course of work of lower the present embodiment is illustrated in detail below:
Cover board 12 is opened, crucible 4 is lifted out working cavity 1, opens crucible 4, is packed into silicon carbide seed in 41 lower surface of crucible cover
Crystalline substance 13, and silicon carbide polycrystal raw material 14 is packed into crucible body 42；Crucible 4 is installed, is down in working cavity 1, is closed
Cover board 12；
The starting heating of heating cylinder 51 is controlled, is passed through suitable as needed by the temperature that infrared temperature instrument 10 monitors crucible cover 41
The process gas and refrigerant of amount, the temperature for measuring infrared temperature instrument 10 are maintained at the temperature of needs；
During silicon carbide monocrystal growth, the rotation of crucible 4 is kept, keeps the growth temperature in crucible 4 more uniform；Basis simultaneously
The speed of silicon carbide monocrystal growth is lifted up crucible 4, remains unchanged the height of growing point.
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art
Scholar can understand the contents of the present invention and be implemented, and it is not intended to limit the scope of the present invention, it is all according to the present invention
Equivalent change or modification made by Spirit Essence, should be covered by the scope of protection of the present invention.
Claims (10)
1. a kind of silicon carbide monocrystal growth device, it is characterised in that: including working cavity, liftable be arranged in the working chamber
Connecting rod in body, the first driving mechanism for driving the connecting rod lifting, the crucible in the working cavity and
Heating mechanism for being heated for the crucible；
The crucible includes the crucible cover for being fixedly arranged on the connecting rod bottom, the earthenware being removably attachable to below the crucible cover
Crucible ontology；
The connecting rod includes bar body, the first passage for being passed through pass-out refrigerant being opened in the bar body, opens up
In the second channel for being used to be passed through process gas in the bar body；The first passage and the second channel mutually every
Disconnected, the second channel is connected to the working cavity；The connecting rod, for passing through the refrigerant and/or the process gas
Body is crucible cover cooling；
The working cavity further includes gas outlet.
2. a kind of silicon carbide monocrystal growth device according to claim 1, it is characterised in that: the first passage is annular
The upper end of cavity, the annular housing offers inlet port and outlet port.
3. a kind of silicon carbide monocrystal growth device according to claim 2, it is characterised in that: the second channel is cylindricality
Cavity, the bottom end side of the cylindrical chamber offer the air vent of craft being connected to the working cavity.
4. a kind of silicon carbide monocrystal growth device according to claim 3, it is characterised in that: the connecting rod, the ring
Shape cavity, the cylindrical chamber coaxially extend.
5. a kind of silicon carbide monocrystal growth device according to claim 3, it is characterised in that: the air vent of craft has more
A, multiple air vent of craft are evenly spaced along the circumferential direction around arrangement.
6. a kind of silicon carbide monocrystal growth device according to claim 3, it is characterised in that: the crucible cover is set to described
The bottom end of cylindrical chamber, described device further include measuring the crucible cover temperature for the direction of axis line along the cylindrical chamber
Infrared temperature instrument.
7. a kind of silicon carbide monocrystal growth device according to claim 1, it is characterised in that: the connecting rod can be around itself
Direction of axis line rotation is arranged in the working cavity, and described device further includes for driving connecting rod rotation
Two driving mechanisms.
8. a kind of silicon carbide monocrystal growth device according to claim 1, it is characterised in that: the heating mechanism includes ring
Set on the heating cylinder of circumference on the outside of the crucible, it is sheathed on the insulation cover of circumference and opening upwards on the outside of the heating cylinder,
The heating temperature of the heating cylinder is gradually increased from top to bottom.
9. a kind of silicon carbide monocrystal growth device according to claim 8, it is characterised in that: the heating cylinder with it is described
Crucible coaxially extends.
10. a kind of silicon carbide monocrystal growth device according to claim 1, it is characterised in that: the connecting rod with it is described
Crucible cover is mutually thermally conductive, and the crucible cover and the crucible body are mutually heat-insulated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910328574.4A CN109913951A (en) | 2019-04-23 | 2019-04-23 | Silicon carbide single crystal growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910328574.4A CN109913951A (en) | 2019-04-23 | 2019-04-23 | Silicon carbide single crystal growth device |
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| Publication Number | Publication Date |
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| CN109913951A true CN109913951A (en) | 2019-06-21 |
Family
ID=66978221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910328574.4A Pending CN109913951A (en) | 2019-04-23 | 2019-04-23 | Silicon carbide single crystal growth device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110344118A (en) * | 2019-07-22 | 2019-10-18 | 江苏星特亮科技有限公司 | Multi-crucible semi-continuous silicon carbide crystal growing device |
| CN110499532A (en) * | 2019-09-26 | 2019-11-26 | 衡水学院 | Quickly prepare the device of silicon carbide |
| CN112899782A (en) * | 2021-01-18 | 2021-06-04 | 河南城建学院 | Crystal preparation device |
| CN113151894A (en) * | 2020-01-07 | 2021-07-23 | 中科钢研节能科技有限公司 | Crystal growth furnace and crystal growth system |
| CN113215660A (en) * | 2021-05-07 | 2021-08-06 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Silicon carbide single crystal growth method capable of reducing heater loss |
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| CN109576792A (en) * | 2019-02-02 | 2019-04-05 | 福建北电新材料科技有限公司 | Silicon carbide monocrystal growth device and single-crystal silicon carbide Preparation equipment |
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| JPH09221389A (en) * | 1996-02-15 | 1997-08-26 | Denso Corp | Apparatus for producing single crystal |
| CN104562185A (en) * | 2014-12-26 | 2015-04-29 | 华中科技大学 | Czochralski crystal growth furnace |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110344118A (en) * | 2019-07-22 | 2019-10-18 | 江苏星特亮科技有限公司 | Multi-crucible semi-continuous silicon carbide crystal growing device |
| CN110344118B (en) * | 2019-07-22 | 2024-01-30 | 江苏星特亮科技有限公司 | Multi-crucible semicontinuous silicon carbide crystal growth device |
| CN110499532A (en) * | 2019-09-26 | 2019-11-26 | 衡水学院 | Quickly prepare the device of silicon carbide |
| CN113151894A (en) * | 2020-01-07 | 2021-07-23 | 中科钢研节能科技有限公司 | Crystal growth furnace and crystal growth system |
| CN112899782A (en) * | 2021-01-18 | 2021-06-04 | 河南城建学院 | Crystal preparation device |
| CN112899782B (en) * | 2021-01-18 | 2022-03-11 | 河南城建学院 | Crystal preparation device |
| CN113215660A (en) * | 2021-05-07 | 2021-08-06 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Silicon carbide single crystal growth method capable of reducing heater loss |
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