CN209544384U - A kind of Low dark curient rate LED chip - Google Patents
A kind of Low dark curient rate LED chip Download PDFInfo
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- CN209544384U CN209544384U CN201920537546.9U CN201920537546U CN209544384U CN 209544384 U CN209544384 U CN 209544384U CN 201920537546 U CN201920537546 U CN 201920537546U CN 209544384 U CN209544384 U CN 209544384U
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Abstract
The utility model discloses a kind of Low dark curient rate LED chips comprising: substrate, the epitaxial layer on substrate, the epitaxial layer include the first semiconductor layer, active layer and the second semiconductor layer；Electric leakage barrier layer in the second semiconductor layer；First electrode on the first semiconductor layer；With the second electrode being set on the second semiconductor layer；Wherein, the electric leakage barrier layer includes microgap permeable formation and passivation layer；The microgap permeable formation with it is overlapped after the annealed technique of passivation layer, form the electric leakage barrier layer.The utility model is provided with electric leakage barrier layer on epitaxial layer, effectively prevents forming LED chip surface leakage problem caused by transparency conducting layer is entered in epitaxial layer with ITO in electrode process and electrode metal by epitaxy defect.
Description
Technical field
The utility model relates to LED technology field more particularly to a kind of Low dark curient rate LED chips.
Background technique
Light emitting diode (LED) is a kind of solid state semiconductor devices that can convert electrical energy into visible light, as photograph
Funerary objects part, opposite traditional lighting device, light emitting diode have sizable advantage --- service life length, high, radiationless, the low function of light efficiency
It consumes, is environmentally protective.LED is mainly used for the fields such as display screen, indicator light, backlight at present.Leak electricity the bad energy that can reduce chip
Consumption so that operation temperature rise, in turn result in burning for component, therefore, how to improve electric leakage, improve the efficiency of product, just at
For the task of top priority.
The main reason for causing LED chip to leak electricity is the existing defects among LED wafer epitaxial process.Specifically, in shape
Among the process of Quantum Well, a large amount of In is needed, and since there are crystal lattice differences between In and Ga atom, cause in epitaxial layer
Surface will form v-notch；In the follow-up process of LED chip, transparency conducting layer and electrode metal are during vapor deposition
It is easily accessible this notch, causes surface leakage problem, LED chip entirety yield is caused to decline.
Utility model content
Technical problem to be solved by the utility model is to provide a kind of Low dark curient rate LED chips, can effectively prevent
Electrode metal enters epitaxial layer defects, causes surface leakage problem, promotes LED chip entirety yield.
In order to solve the above-mentioned technical problem, the utility model provides a kind of Low dark curient rate LED chip comprising:
Substrate,
Epitaxial layer on substrate, the epitaxial layer include the first semiconductor layer, active layer and the second semiconductor layer；
Electric leakage barrier layer in the second semiconductor layer；
First electrode on the first semiconductor layer；With
Second electrode on the second semiconductor layer；
Wherein, the electric leakage barrier layer includes microgap permeable formation and passivation layer；The microgap permeable formation and passivation layer are through moving back
It is overlapped after fire process, form the electric leakage barrier layer.
As an improvement of the above technical solution, the microgap permeable formation is by one of methanol, ethyl alcohol, isopropanol, acetone
It is made.
As an improvement of the above technical solution, which is characterized in that the passivation layer is by SiO2、SiNx、Al2O3、TiO2、
Ti2O5Middle one kind is made.
As an improvement of the above technical solution, the passivation layer includes the first passivation layer and the second passivation layer；
First passivation layer is by HfO2、Al2O3One of be made；
Second passivation layer is by SiO2、TiO2One of be made.
As an improvement of the above technical solution, first passivation layer is by HfO2It is made；Second passivation layer is by SiO2System
At.
As an improvement of the above technical solution, the thickness ratio of first passivation layer and the second passivation layer be 1:(2~
100)。
As an improvement of the above technical solution, the thickness ratio of first passivation layer and the second passivation layer be 1:(50~
100)。
As an improvement of the above technical solution, the passivation layer thickness is 50-300nm.
Implement the utility model, has the following beneficial effects:
1. the utility model is provided with electric leakage barrier layer on epitaxial layer, effectively prevent forming transparency conducting layer and electrode
LED chip surface leakage problem caused by ITO and electrode metal are entered in epitaxial layer by epitaxy defect in the process.
2. the electric leakage barrier layer in the utility model is divided into microgap permeable formation and passivation layer, microgap permeable formation uses small molecule
Organic matter is made, can be fully penetrated；Passivation layer can then further decrease interfacial state；The two is closely overlapped by annealing process, is filled
Divide the gap for each size being filled in epitaxial layer, inhibits tracking current.
Detailed description of the invention
Fig. 1 is a kind of flow chart for promoting LED chip electric leakage yield method of the utility model；
Fig. 2 is a kind of structural schematic diagram of the LED chip of Low dark curient rate of the utility model；
Fig. 3 is the structural schematic diagram on the utility model electric leakage barrier layer.
Specific embodiment
It is practical new to this below in conjunction with attached drawing to keep the purpose of this utility model, technical solution and advantage clearer
Type is described in further detail.Only this state, the utility model occur in the text or will occur upper and lower, left and right, it is preceding,
Afterwards, the orientation such as inside and outside word is not the specific restriction to the utility model only on the basis of the attached drawing of the utility model.
Referring to Fig. 1 and Fig. 2, the utility model provides a kind of method of promotion LED chip electric leakage yield comprising following step
It is rapid:
S1: a substrate is provided；
Sapphire can be selected in the substrate 1；
S2: epitaxial layer is formed over the substrate；
Specifically, forming epitaxial layer over the substrate using the method for chemical deposition (MOCVD).
The epitaxial layer 2 includes the first semiconductor layer 21, active layer 22 and the second semiconductor layer 23；First semiconductor
Layer 21 and the second semiconductor layer 23 are gallium nitride-based semiconductor, and active layer is gallium nitride base active layer；In addition, the application is real
The material for applying the first semiconductor layer 21, the second semiconductor layer 23 and active layer 22 that example provides can also be other materials, to this
The application is not particularly limited.
S3: MESA etching is carried out to epitaxial layer, exposes the first semiconductor layer；
Specifically, being etched using ICP or RIE etching apparatus to the epitaxial layer 2, the first exposed region is formed, the
One exposed region is etched to the first semiconductor layer.
S4: microgap permeable formation is coated on the second semiconductor layer；
Specifically, coating microgap permeable formation in the second semiconductor layer surface using spin coating instrument.Coated weight is 0.01-
0.05mL/cm2。
Microgap permeable formation is made of one or more of methanol, ethyl alcohol, isopropanol, acetone；Microgap permeable formation 31 is by small
Molecule carbonaceous organic material is made, and molecular weight is smaller, and low boiling point, and molecular motion is exceedingly fast at normal temperature, so that it can quickly expand
It dissipates among the defect of epitaxial layer, fills up defect.Preferably, microgap permeable formation 31 is made of isopropanol and/or acetone；This two
Kind substance viscosity is high compared with ethyl alcohol, methanol, is easy evenly dispersed in LED chip；And evaporation rate is slow compared with methanol, ethyl alcohol, subsequent
It is easy to control in annealing process.
S5: the deposit passivation layer on microgap permeable formation；
Specifically, using Plasma Enhanced Chemical Vapor Deposition (PECVD) (MOCVD) deposit passivation layer 32, depositing temperature 80-150
℃；Further, depositing temperature is 90-110 DEG C.
Passivation layer 32 is by SiO2、SiNx、Al2O3、TiO2、Ti2O5One or more of be made；Preferably, passivation layer by
SiO2Or SiNxIt is made.Passivation layer with a thickness of 2-300nm, preferably 50-300nm.
It is further preferred that the passivation layer 32 includes the first passivation layer 33 and the second passivation layer 34, the second passivation layer 34
Positioned at 33 top of the first passivation layer；First passivation layer 33 is by HfO2、Al2O3One of be made；Second passivation layer 34
By SiO2、TiO2One of be made.Preferably, the first passivation layer 33 is by HfO2It is made, the second passivation layer 34 is by SiO2It is made.
Wherein, the dielectric constant of the first passivation layer 33 is higher, and insulation performance is stronger；It can effectively reduce leakage current.Meanwhile first passivation layer
The polarity of raw material is stronger, can be preferably in conjunction with the raw material of microgap permeable formation 31.
In order to further play the effect for reducing leakage current, the thickness ratio of first passivation layer and the second passivation layer is 1:
(2~100)；Preferably, the thickness of the first passivation layer and the second passivation layer ratio be 1:50~100, further preferably 1:80~
100.When first passivation layer is excessively thin, it is unable to give full play insulating effect.When first passivation layer is blocked up, although insulation performance is more excellent,
But higher cost；Simultaneously, it is even more important that the liquid charging stock of microgap permeable formation is easy largely to volatilize by the first passivation layer,
Microgap filling effect is poor.
S6: annealing is stacked with microgap permeable formation with passivation layer, forms electric leakage barrier layer；
Wherein, annealing temperature is 100-550 DEG C, annealing time 0.3-1h, it is preferred that annealing temperature is 200-400 DEG C.
Annealing can vaporizing section microgap permeable formation raw material, merge it sufficiently with passivation layer, stack.Meanwhile it also may make that passivation layer is former
Material becomes the solid-state of oxide or peroxide, prevents from leaking electricity.
It should be understood that SiO is usually used in the prior art2、SiNxOr Al2O3Epitaxial layer is once passivated, but
It is constrained to gas-phase deposition, the grain diameter of passivation layer is larger, can not be filled up completely epitaxial layer defects, therefore there are still leakages
The electric higher problem of rate.For this purpose, the utility model carries out first of filling using liquid, it is main to complete microgap filling；Then again
Secondary filling is carried out using passivation layer, mainly to the centre of v-notch and top section；And microgap is filled by annealing process
Layer is stacked with passivation layer, is formed the good electric leakage barrier layer of filling effect, has been sufficient filling with each size in epitaxial layer
Gap.
On the other hand, since the utility model is in 31 overburden of liquid microgap permeable formation solid-state passivation layer 32, then into
Row annealing, this just effectively prevents 31 liquid charging stock of microgap permeable formation and volatilizees completely in annealing process, so that microgap permeable formation
31 with passivation layer 32 it is fully penetrated, stack.
S7: it is cleaned using cleaning agent；Remove the electric leakage barrier layer of the second semiconductor layer surface；
Specifically, S7 includes:
S71: the LED chip merging detergent after annealing is impregnated 5-10 minutes；
S72: it using pure water rinsing and dries.
The effect of cleaning is the electric leakage barrier layer 3 for removing 23 surface of the second semiconductor layer, only retains the second semiconductor break
Fall into the electric leakage barrier layer 3 among gap.
In order to ensure only removing the electric leakage barrier layer 3 on 23 surface of the second semiconductor layer；It needs to be subject to the property of cleaning agent
It limits.In the present invention, it is cleaned using the biggish cleaning agent of viscosity, such cleaning agent will not penetrate into second
Among semiconductor layer defect gap；The effective component of cleaning agent is F or P, can effectively remove the solid material of passivation layer.
Preferably, the detergent is the mixture of hydrofluoric acid, phosphoric acid and non-ionic polyacrylamide.Nonionic poly- third
Acrylamide can effectively thicken above-mentioned detergent solution.
Preferably, step S7 further include:
Form transparency conducting layer 6 (ITO layer) on the epitaxial layer 2；Specifically, the side of vapor deposition or magnetron sputtering can be used
Formula forms transparency conducting layer；
The ITO layer is performed etching, the second exposed region is formed；And first exposed region is exposed；Tool
Body, the transparency conducting layer is etched using ICP or RIE etching apparatus.
S8: first electrode is formed on first semiconductor layer；Second electrode is formed on second semiconductor layer；
Obtain Low dark curient rate LED chip finished product.
Specifically, depositing first electrode 4 in first exposed region, the second electricity is deposited on second exposed region
Pole 5.
Wherein, first electrode 4 is made with second electrode 5 of one or more of Cr, Al, Ti, Pt, Ni, Au, Cu, Ag.
Preferably, first electrode 4 is made with second electrode 5 of Cr, Al, Ti, Pt and Au, and structure is Cr layers, is sequentially arranged on Cr layer
Al layer, Ti layers, Pt layers and Au layers.Wherein, there is good cohesive force Cr layers, prevents alloy-layer from falling off, and can be with semiconductor
Layer forms good Ohmic contact；Al layers can have good reflecting properties, be conducive to the overall performance for promoting LED chip；
Al migration in Al layer in order to prevent simultaneously, on Al layers of top provided with Ti layers；Pt and Au is conductive good, stablizes, prolongs
The advantages that malleability is good.
Preferably, in the utility model LED chip preparation method further include:
S9: insulating protective layer is formed in first semiconductor layer, first electrode, transparency conducting layer, second electrode；
Specifically, the method using vapor deposition (MOCVD) forms insulating protective layer 7；The insulating protective layer is by SiO2、
SiNx、Al2O3、TiO2、Ti2O5One or more of be made.
S10: the insulating protective layer is etched into aperture, the exposure first electrode and second electrode；
S11: grinding organic semiconductor device thickness；
S12: substrate is split using laser scribing, and is cleaved with steel chopper, crystal grain is formed, obtains LED chip finished product.
Correspondingly, the invention also discloses a kind of Low dark curient rate LED chips, referring to fig. 2 comprising, substrate 1；If
In the epitaxial layer 2 on substrate 1, epitaxial layer 2 successively includes the first semiconductor layer 21, active layer and the second semiconductor layer 22；It is set to
Electric leakage barrier layer 3 in second semiconductor layer 22；First electrode 4 on the first semiconductor layer 21 and it is set to the second half
Second electrode 5 in conductor layer；Wherein, electric leakage barrier layer 3 includes microgap permeable formation 31 and passivation layer 2；31 He of microgap permeable formation
It is overlapped after the annealed technique of passivation layer, form electric leakage barrier layer 3.
The utility model is provided with electric leakage barrier layer in epitaxial layer, effectively prevents forming transparency conducting layer and electrode process
LED chip surface leakage problem caused by middle ITO and electrode metal are entered in epitaxial layer by epitaxy defect.Meanwhile this is practical
Electric leakage barrier layer in novel is divided into microgap permeable formation and passivation layer, and microgap permeable formation can be fully penetrated；Passivation layer can then reduce
Interfacial state；The two is closely overlapped by annealing process, has been sufficient filling with the gap of each size in epitaxial layer, inhibits surface leakage
Stream.
Specifically, electric leakage barrier layer 3 includes microgap permeable formation 31 and passivation layer 32 referring to Fig. 3；Wherein, microgap permeable formation
31 are made of one or more of methanol, ethyl alcohol, isopropanol, acetone；Microgap permeable formation 31 is by small molecule carbonaceous organic material system
At molecular weight is smaller, and low boiling point, and molecular motion is exceedingly fast at normal temperature, so that it can rapidly diffuse into lacking for epitaxial layer
Among falling into, defect is filled up.Preferably, microgap permeable formation 31 is made of isopropanol and/or acetone；Both substance viscosities are compared with second
Alcohol, methanol are high, are easy evenly dispersed in LED chip；And evaporation rate is slow compared with methanol, ethyl alcohol, is easy during subsequent anneal
Control.
Passivation layer 32 is by SiO2、SiNx、Al2O3、TiO2、Ti2O5One or more of be made；Preferably, passivation layer by
SiO2Or SiNxIt is made.
In order to further enhance the electric leakage yield of LED chip in the utility model, two are provided on microgap permeable formation 31
Layer passivation layer；Respectively the first passivation layer 33 and the second passivation layer 34, the second passivation layer 34 are located at 33 top of the first passivation layer；Institute
The first passivation layer 33 is stated by HfO2、Al2O3One of be made；Second passivation layer 34 is by SiO2、TiO2One of be made.
Preferably, the first passivation layer 33 is by HfO2It is made, the second passivation layer 34 is by SiO2It is made.Wherein, the dielectric of the first passivation layer 33 is normal
Number is higher, and insulation performance is stronger；It can effectively reduce leakage current.Meanwhile first passivation layer raw material polarity it is stronger, can preferably with
The raw material of microgap permeable formation 31 combines.
In order to further play the effect for reducing leakage current, the thickness ratio of first passivation layer 33 and the second passivation layer 34
For 1:(2~100)；Preferably, the thickness of the first passivation layer and the second passivation layer ratio be 1:50~100, further preferably 1:
80~100.When first passivation layer is excessively thin, it is unable to give full play insulating effect.When first passivation layer is blocked up, although insulation performance compared with
It is excellent, but higher cost；Simultaneously, it is even more important that the liquid charging stock of microgap permeable formation is easy largely to wave by the first passivation layer
Hair, microgap filling effect are poor.
Specifically, in order to promote the efficiency of the utility model Low dark curient rate LED chip, on second semiconductor layer 23
It is additionally provided with transparency conducting layer 6 (ITO layer)；In first semiconductor layer 21, transparency conducting layer 6, first electrode 4 and second electrode
Insulating protective layer 7 is additionally provided on 5；The insulating protective layer 7 is equipped with aperture at electrode, with the exposure first electrode 4 and the
Two electrodes 5.
The above is preferred embodiments of the present invention, it is noted that for the ordinary skill of the art
For personnel, without departing from the principle of this utility model, several improvements and modifications can also be made, these are improved and profit
Decorations are also considered as the protection scope of the utility model.
Claims (8)
1. a kind of Low dark curient rate LED chip characterized by comprising
Substrate,
Epitaxial layer on substrate, the epitaxial layer include the first semiconductor layer, active layer and the second semiconductor layer；
Electric leakage barrier layer in the second semiconductor layer；
First electrode on the first semiconductor layer；With
Second electrode on the second semiconductor layer；
Wherein, the electric leakage barrier layer includes microgap permeable formation and passivation layer；The microgap permeable formation and the annealed work of passivation layer
It is overlapped after skill, form the electric leakage barrier layer.
2. Low dark curient rate LED chip as described in claim 1, which is characterized in that the microgap permeable formation by methanol, ethyl alcohol,
One of isopropanol, acetone are made.
3. Low dark curient rate LED chip as claimed in claim 2, which is characterized in that the passivation layer is by SiO2、SiNx、Al2O3、
TiO2、Ti2O5Middle one kind is made.
4. Low dark curient rate LED chip as described in claim 1, which is characterized in that the passivation layer include the first passivation layer and
Second passivation layer；
First passivation layer is by HfO2、Al2O3One of be made；
Second passivation layer is by SiO2、TiO2One of be made.
5. Low dark curient rate LED chip as claimed in claim 4, which is characterized in that first passivation layer is by HfO2It is made；Institute
The second passivation layer is stated by SiO2It is made.
6. Low dark curient rate LED chip as claimed in claim 5, which is characterized in that first passivation layer and the second passivation layer
Thickness ratio be 1:(2~100).
7. Low dark curient rate LED chip as claimed in claim 6, which is characterized in that first passivation layer and the second passivation layer
Thickness ratio be 1:(50~100).
8. Low dark curient rate LED chip as described in claim 1, which is characterized in that the passivation layer thickness is 50-300nm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201920537546.9U CN209544384U (en) | 2019-04-18 | 2019-04-18 | A kind of Low dark curient rate LED chip |
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| CN201920537546.9U CN209544384U (en) | 2019-04-18 | 2019-04-18 | A kind of Low dark curient rate LED chip |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110034215A (en) * | 2019-04-18 | 2019-07-19 | 佛山市国星半导体技术有限公司 | A method of promoting LED chip electric leakage yield |
-
2019
- 2019-04-18 CN CN201920537546.9U patent/CN209544384U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110034215A (en) * | 2019-04-18 | 2019-07-19 | 佛山市国星半导体技术有限公司 | A method of promoting LED chip electric leakage yield |
| CN110034215B (en) * | 2019-04-18 | 2024-03-12 | 佛山市国星半导体技术有限公司 | Method for improving leakage yield of LED chip |
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