CN209456615U - Crystal silicon ingot casting heater - Google Patents
Crystal silicon ingot casting heater Download PDFInfo
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- CN209456615U CN209456615U CN201821924498.0U CN201821924498U CN209456615U CN 209456615 U CN209456615 U CN 209456615U CN 201821924498 U CN201821924498 U CN 201821924498U CN 209456615 U CN209456615 U CN 209456615U
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- heater
- ingot casting
- silicon ingot
- crystal silicon
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Abstract
The utility model relates to a kind of crystal silicon ingot casting heaters, including top heater；Side heater, including side upper heater and side lower heater, wherein the side upper heater and top heater connect to form series unit, the series unit and side lower heater independently connect power supply.Above-mentioned crystal silicon ingot casting heater, side heater is divided into two parts, a part independent connection power supply, another part is connected with top heater, so that respective heating power is controlled during long brilliant with can be convenient, so as to flexibly control side heater to silicon material radiations heat energy, optimize the long brilliant time-consuming and ingot casting period.
Description
Technical field
The utility model relates to silicon ingot ingot casting preparation fields, more particularly to a kind of crystal silicon ingot casting heater.
Background technique
Crystallographic orientation casting polysilicon ingot process is simply easy to industrialized production, and output yield is big, and opposite production cost
It is low, so casting polysilicon is most popular solar energy materials.However compared with traditional thermal power generation, photovoltaic
Cost of electricity-generating is still higher, therefore still needs to advanced optimize polycrystalline silicon casting ingot process, improves output, improves polycrystal silicon ingot matter
Amount improves photoelectric conversion efficiency, and then reduces cost for solar power generation.
The long crystalline substance of directional solidification is to conduct heat downwards by cold and hot swap block (DSS block), while by polycrystalline silicon ingot or purifying furnace
Heating system heat compensation grow the different columnar-shaped polycrystalline of crystal orientation to form longitudinal temperature gradient in melted silicon
Silicon.But actual ingot casting process not only has biggish longitudinal temperature gradient in melted silicon, and there are also obvious transverse temperature ladders
Degree, long crystal boundary face is rough " W " shape, and there are in more thermal stress and polycrystal silicon ingot in crystal during ingot casting
Form the major reason of dislocation bundles.The heating systems of polycrystalline silicon ingot or purifying furnace include top heater and side heater, small part
It further include bottom heater in ingot furnace, top side bottom heater is parallel with one another, in heat-insulation cage opening procedure, respectively from top side
To silicon solution heat compensation, but as crystal is constantly grown, the heat that melted silicon receives the radiation of top side portion heater is got over for bottom
Come more, conducts that heat is slower and slower outward by DSS block, the longitudinal temperature gradient in melted silicon reduces, and long crystalline substance speed can be got over
Come slower, the long brilliant time-consuming and ingot casting period is constrained, to influence ingot casting energy consumption and production cost.
Utility model content
Based on this, it is necessary to for the long brilliant time-consuming problem long with the ingot casting period is kept, provide a kind of crystal silicon ingot casting heating
Device.
A kind of crystal silicon ingot casting heater, including
Top heater；
Side heater, including side upper heater and side lower heater, wherein the side upper heater and top
Heater connects to form series unit, and the series unit and side lower heater independently connect power supply.
Above-mentioned crystal silicon ingot casting heater, side heater are divided into two parts, a part independent connection power supply, another part with
Top heater series connection, so that respective heating power is controlled during long brilliant with can be convenient, so as to flexibly control
Side heater optimizes the long brilliant time-consuming and ingot casting period to silicon material radiations heat energy.
The series unit is connected to three-phase alternating-current supply in one of the embodiments, and the side lower heater connects
It is connected to different three-phase alternating-current supplies.
The top heater includes in conplane 2 snake types arranged side by side in one of the embodiments,
Heater, the two sides of each snakelike heater are respectively arranged with 2 S type heaters, and the side upper heater is along the circumferential direction
It is evenly equipped at 4, each side upper heater includes 2 U-shaped heaters arranged side by side, at the top heater and described 4
Side upper heater form two series connection subelements, wherein each subelement of connecting is by the 2 of 1 snakelike heater and its two sides
A S type heater connects the U-shaped heater that 4 are arranged successively to be formed, on 2 S type heaters in the series connection subelement
It is connected separately with graphite electrode.
In one of the embodiments, in the series connection subelement, along the circumferencial direction, the adjacent U-shaped heating
Device is sequentially connected in series by S type heater or snake type heater, wherein the both ends of the snake type heater pass through a switching respectively
Plate is connected to U-shaped heater, and the both ends of S type heater pass through a pinboard respectively and are connected to U-shaped heater.
The width for the pinboard that the S type heater is connected in one of the embodiments, and the width of S type heater
Difference is less than 10 millimeters.
The inner surface of the inner surface of the side upper heater and the side lower heater in one of the embodiments,
It is in the same plane.
The distance between the side upper heater and the side lower heater are 10 millis in one of the embodiments,
Rice~60 millimeters.
The resistance of the side lower heater is heated no more than side upper heater and top in one of the embodiments,
The sum of concatenated resistance of device；The resistance of the side upper heater is less than side upper heater and the concatenated resistance of top heater
The sum of 1/2.
Detailed description of the invention
Fig. 1 is the schematic perspective view of the heater of an embodiment of the present invention；
Fig. 2 is the heater of an embodiment of the present invention and the assembling schematic diagram of graphite crucible；
Fig. 3 is the connection schematic diagram of top heater and side upper heater in the heater of an embodiment of the present invention；
Fig. 4 is the schematic top plan view of structure shown in Fig. 3；
Fig. 5 and Fig. 6 is respectively the side schematic view of the different angle of structure shown in Fig. 3；
Fig. 7 is the cross section PL of the polycrystalline silicon ingot according to made from the application method of the heater of the utility model embodiment
Schematic diagram；And
Fig. 8 is that the cross section of the polycrystalline silicon ingot according to made from the application method of the heater of the utility model embodiment is few
Sub- life diagram.
Specific embodiment
To keep the above objects, features, and advantages of the utility model more obvious and easy to understand, with reference to the accompanying drawing to this
The specific embodiment of utility model is described in detail.Many details are explained in the following description in order to abundant
Understand the utility model.But the utility model can be implemented with being much different from other way described herein, this field
Technical staff can do similar improvement without prejudice to the utility model connotation, therefore the utility model is not by following public affairs
The limitation for the specific embodiment opened.
It should be noted that it can directly on the other element when element is referred to as " being fixed on " another element
Or there may also be elements placed in the middle.When an element is considered as " connection " another element, it, which can be, is directly connected to
To another element or it may be simultaneously present centering elements.
Unless otherwise defined, all technical and scientific terms used herein are led with the technology for belonging to the utility model
The normally understood meaning of the technical staff in domain is identical.Terminology used in the description of the utility model herein only be
The purpose of description specific embodiment, it is not intended that in limitation the utility model.Term " and or " used herein includes
Any and all combinations of one or more related listed items.
With reference to Fig. 1, an embodiment of the utility model discloses a kind of crystal silicon ingot casting heater, including top heater 10
With side heater 20.Side heater 20 includes side upper heater 210 and side lower heater 220, is wherein added on side
Hot device 210 and the series connection of top heater 10 form series unit, and wherein series unit and side lower heater 220 independently connect
Connect power supply.In other words, it in the present embodiment, is controlled using dual power supply.Top heater 10 and side heater 20 are in ingot furnace
Electrode installation site can with traditional single supply control graphite heater it is consistent.When dual power supply controls, crystal silicon ingot casting adds
The nominal total power of hot device is not less than nominal total power when single supply.
Side upper heater 210 and top heater 10 constitute series unit, the series unit and side lower heater 220
The energy independent control on circuit, so that respective heating power is controlled during long brilliant with can be convenient, so as to flexible
Side heater 20 is controlled to silicon material radiations heat energy, to optimize the long brilliant time-consuming and ingot casting period.Specifically, can be before long crystalline substance
Phase increases the heating power of side lower heater 220, the appearance of " cold-wall effect " is avoided, to weaken side forming core effect；It is long
Brilliant stage is reduced or switched off the heating power of side lower heater 220, and side upper heater 210 is used only, and accelerates silicon crystal
Middle heat scatters and disappears, while optimizing the temperature gradient in long brilliant later period melted silicon and long brilliant rate, makes the long brilliant rate of long brilliant process
Fluctuate smaller, optimize the long brilliant time-consuming and ingot casting period, reduce silicon crystal Dislocations density, reduce production energy consumption and cost, more into
One step improves Ingot quality.In addition side upper heater 210 is connected with top, can increase the total heat release power in side, reduces top
The heating power (a part of heating power has given side upper heater 210) of portion's heater 10, optimizes long crystal boundary face, avoids crystalline substance
The appearance of crystallite in body can also reduce the thermal stress in crystal, reduce silicon ingot evolution crackle ratio.
Some embodiments according to the present utility model, side upper heater 220 and top heater 10 are connected to three intersections
Galvanic electricity source, side lower heater 220 are connected to different three-phase alternating-current supplies, to realize the independent control on circuit.Such as Fig. 1
It is shown, 4 the first graphite electrodes 110 are connected on the series unit of side upper heater 220 and the composition of top heater 10, are used
To be connected to three-phase alternating-current supply.
Some embodiments according to the present utility model, top heater 10 include in conplane arranged side by side 2
A snake type heater 120, the two sides of each snakelike heater 120 are respectively arranged with 2 S type heaters 130.Side upper heater
210 are provided at 4.Each side upper heater 210 includes 2 U-shaped heaters 211 arranged side by side.10 He of top heater
Side upper heater 210 forms two series connection subelements, wherein each series connection subelement is by 1 snakelike heater 120 and its two
2 S type heaters 130 of side form the 4 U-shaped heater 211 being sequentially arranged series connection, 2 S in the series connection subelement
The first graphite electrode 110 is connected separately on type heater 130.Side lower heater 220 is arranged to snakelike, and both ends connect respectively
It is connected to the second graphite electrode 221.
Specifically, 2 snake type heaters 120 are placed side by side as shown in Fig. 1, Fig. 3 to Fig. 6, and each 2 snake types heat
2 S type heaters 130 are respectively set in the two sides of device 120.In this way, 4 S type heaters 130 and 2 snake type heaters on the whole
120 is circumferentially disposed on the whole and substantially surround rectangle, wherein 4 S type heaters 130 form an opposite side of rectangle, 2
Part snake type heater 120 then forms another opposite side of rectangle.8 U-shaped heaters 211 are then uniformly respectively in four sides of rectangle
At side, i.e. each side is arranged side by side 2 U-shaped heaters 211.As shown in figure 4, be located at left side snake type heater 120 and
4 U-shaped heaters 211 are together in series to form sub-series list by 2 S type heaters 130 of about 120 two sides of snake type heater altogether
First a and b.In schematic perspective view shown in FIG. 1, the generally lower arrangement of two series connection subelements a and b.Vertical view shown in Fig. 4
In schematic diagram, two series connection subelements a and b or so are arranged side by side.
Further, it connects in subelement, along the circumferencial direction, adjacent U-shaped heater 211 passes through snake type heater
120 or S type heater 130 is sequentially connected in series, and wherein the both ends of snake type heater 120 pass through a pinboard 40 respectively and are connected to U
Type heater 211, the both ends of S type heater 130 pass through a pinboard 40 respectively and are connected to U-shaped heater 2021.With reference to figure
1, Fig. 4 is located in the middle 2 U-shaped heating in 4 U-shaped heaters 211 in the subelement a that connects by taking the subelement a that connects as an example
Each own end of device 211 is connected with pinboard 40, and two pinboards 40 are connect with the both ends of snake type heater 120 respectively.
In this way, two intermediate U-shaped heaters 211 are together in series by snake type heater 120.Similar, S type heater 130 is by turning
The remaining one end of 2 intermediate U-shaped heaters 211 is connected to the U-shaped heater 211 positioned at outside by fishplate bar.In this way, 4
A U-shaped heater 211 forms series connection subelement a by 1 snake type heater 120 and 2 S type heaters 130.For sub-series
Unit b, connection type is similar with series connection subelement a, repeats no more.
Further, the width of the width and S type heater 130 of the pinboard 40 that the S type heater 130 is connected is poor
Less than 10 millimeters, which can guarantee that thermal power is more evenly distributed, while guarantee that the side in side heater and ingot furnace is protected
The spacing of Wen Ping is within safe distance.
Further, the equivalent width of the amplitude of side lower heater 220 and U-shaped heater 211.As shown in Figure 1, side
Lower heater 220 is snakelike heater, the U of amplitude (i.e. the height) and composition side upper heater 210 of each snakelike heater
The equivalent width of type heater 211.The structure can make the radiant heat of U-shaped heater 211 be mainly distributed on the middle and upper part of silicon material.
In above-described embodiment, top heater 10 includes the heater of S type and U-shaped two kinds of shapes, side upper heater 210
Then it is made of U-shaped heater 211.It is to be appreciated that can be the heating of selection other shapes according to ingot furnace thermal field feature
Device, such as class ellipse or rectangle etc..
Some embodiments according to the present utility model, the inner surface of side upper heater 210 and side lower heater 220
Inner surface is in the same plane, and the side heater of guarantee side upper heater 210 and the composition of side lower heater 220 is everywhere
Surface is consistent with crucible spacing, and with crucible and side heat protection screen spacing within safe distance.Inner surface herein refers to side
Portion's upper heater 210 or side lower heater 220 to the surface opposite with graphite crucible 40.As shown in Fig. 2, when side adds
After hot device 20 is assembled with graphite crucible 50, the inner surface of side upper heater 210 and the inner surface of side lower heater 220 are common
Constitute the inner wall in the surrounded space of side heater 20.
Some embodiments according to the present utility model, the width and side upper heater 210 and width of side lower heater 220
Degree difference guarantees U-shaped 211 thermal radiation distribution of heater in the middle and upper part of silicon material less than 50 millimeters.Side upper heater 210 and side
The distance between lower heater 220 is 10 millimeters~60 millimeters.
The material of some embodiments according to the present utility model, side upper heater 210 and side lower heater 220 is CC
Fiberboard or graphite.It is to be appreciated that material can hinder heater according to the resistance characteristic and ingot furnace thermal field of material itself
Value requires to determine.
The resistance of some embodiments according to the present utility model, side lower heater 220 is not more than side upper heater 210
The sum of with the concatenated resistance of top heater 10；The resistance of side upper heater 210 is less than side upper heater 210 and top adds
The 1/2 of the sum of the concatenated resistance of hot device 10.By the power distribution on regulation top and side, keep long crystal boundary face gentler, it is long
Brilliant time-consuming regulation is more effective.
One embodiment of the utility model also proposed a kind of application method of the crystal silicon ingot casting heater of above-described embodiment.
This approach includes the following steps.
S100, the brilliant first stage is being grown, the heating power of side lower heater 220 is made to be greater than side upper heater 210
Heating power.
According to rate of crystalline growth, long crystalline substance is broadly divided into two stages.First stage is to grow brilliant initial stage, in this stage,
The crystal height of generation is usually no more than the 30% of crystal height.In this stage, keep the heating power of side lower heater 220 big
In the heating power of side upper heater 210, to avoid the appearance of " cold-wall effect ", weaken side caused by " cold-wall effect "
Forming core improves long crystal boundary face.
S120, in long brilliant second stage, gradually decrease or the heating power of close side subordinate heater 220.Second stage
For the long brilliant middle and later periods, in this stage, by gradually decreasing the fever function of side lower heater 220, so that mainly utilizing side
The radiations heat energy into graphite crucible 50 of upper heater 210；Or close side subordinate heater 220, only it is applicable in side upper heater
210 into graphite crucible 50 radiations heat energy.In this way, accelerating scattering and disappearing for heat in silicon crystal, accelerates long brilliant speed, reach optimization length
The purpose of temperature gradient and long brilliant rate in brilliant later period silicon solution.Meanwhile long brilliant rate fluctuation is smaller during long crystalline substance, silicon wafer
Residual thermal stress is smaller in body, reduces silicon crystal Dislocations density, reduces production energy consumption and cost, further improves silicon ingot matter
Amount.
Some embodiments according to the present utility model heat on side lower heater 220 and side in the long brilliant first stage
The heating power ratio of device 210 is not less than 4.5:2；In long brilliant second stage, the heating power of side lower heater 210 and side
The ratio of the heating power of upper heater 10 is not more than 1:2.
Below with reference to one embodiment, illustrate the crystal silicon ingot casting heater and its application method of the utility model embodiment.
In one embodiment, crystal silicon ingot casting heater includes top heater 10 and side heater.Side heater 20
Including side upper heater 210 and side lower heater 220.Top heater 10 includes in conplane arranged side by side
2 snake type heaters 120, the two sides of each snakelike heater 120 are respectively arranged with 2 S type heaters 130.It is heated on side
Device 210 includes 8 circumferentially disposed U-shaped heaters 210.Top heater 10 and side upper heater 210 form two
A series connection subelement, wherein each series connection subelement is by 1 snakelike heater 120 and its 2 S type heaters 130 of two sides by 4
A series connection of U-shaped heater 211 being sequentially arranged is formed, and is connected separately with graphite the on 2 S type heaters in subelement of connecting
One graphite electrode.The width of pinboard 40 is 70 millimeters, and the pinboard length of different location can be variant.Snake type heater
The width of 120 and S type heater 130 is 70 millimeters.
The width of side upper heater 210 is 83 millimeters, with a thickness of 26 millimeters.But it may be noted that the side of different location
The wire length (total length after being unfolded) of upper heater can be different.The resistance and top heater 10 of side lower heater 220
It is equal with the sum of the resistance of side upper heater 210, and the resistance ratio of the resistance of side upper heater 210 and top heater 10
For 1:2.
When crystal silicon ingot casting heater is installed to ingot furnace, in conjunction with Fig. 2, the lower edge of side lower heater 220 is apart from stone
Spacing between black bottom plate is 25 millimeters, between the safety between the top edge and side upper heater 210 of side lower heater 220
Away from being 30 millimeters.The top edge of side upper heater 210 is then higher than 20 millimeters of the upper surface of graphite crucible 40.Side upper heater
210 inner surface and the inner surface of side lower heater 220 are in same plane.
Long crystalline substance early period, side lower heater 220 and 210 heating power ratio of side upper heater are 5.5:4.5；In long crystalline substance
Later period is gradually reduced the heating power of side lower heater 2120；Brilliant later period side lower heater 220 will be grown and heated on side
210 heating power Ratio control of device is in 1:4；Crystalline substance latter stage is grown, then close side subordinate heater 220.Measuring and calculating shows that the ingot casting period is
85 hours, be to shorten 7 hours in 92 hours compared with the production cycle same period.In addition, as shown in Figure 7 and Figure 8, utilizing above-mentioned crystal silicon heater
Side forming core caused by the polysilicon crystal " cold-wall effect " of casting obviously weakens, and long crystal boundary face is in dimpling shape, in the ingot of surrounding
Do not occur black dislocation bundles, intermediate small side's spindle position mistake distribution is consistent with normal silicon ingot.
Above-described embodiments merely represent several embodiments of the utility model, the description thereof is more specific and detailed,
But it cannot be understood as the limitations to utility model patent range.It should be pointed out that for the common skill of this field
For art personnel, without departing from the concept of the premise utility, various modifications and improvements can be made, these are belonged to
The protection scope of the utility model.Therefore, the scope of protection shall be subject to the appended claims for the utility model patent.
Claims (8)
1. a kind of crystal silicon ingot casting heater, which is characterized in that including
Top heater；
Side heater, including side upper heater and side lower heater, wherein the side upper heater and top heating
Device connects to form series unit, and the series unit and side lower heater independently connect power supply.
2. crystal silicon ingot casting heater according to claim 1, which is characterized in that the series unit is connected to three-phase alternating current
Power supply, the side lower heater are connected to different three-phase alternating-current supplies.
3. crystal silicon ingot casting heater according to claim 1, which is characterized in that the top heater includes in same
The arranged side by side 2 snake type heater of plane, the two sides of each snakelike heater are respectively arranged with 2 S type heaters, described
Side upper heater is along the circumferential direction evenly equipped at 4, and each side upper heater includes 2 U-shaped heaters arranged side by side, institute
It states the side upper heater at top heater and described 4 and forms two series connection subelements, wherein each series connection subelement is by 1
Snakelike heater and its 2 S type heaters of two sides connect the U-shaped heater that 4 are arranged successively to be formed, the sub-series list
Graphite electrode is connected separately on 2 S type heaters in member.
4. crystal silicon ingot casting heater according to claim 3, which is characterized in that in the series connection subelement, along the circle
Circumferential direction, the adjacent U-shaped heater are sequentially connected in series by S type heater or snake type heater, wherein the snake type heats
The both ends of device pass through a pinboard respectively and are connected to U-shaped heater, and the both ends of S type heater pass through a pinboard respectively and connect
It is connected to U-shaped heater.
5. crystal silicon ingot casting heater according to claim 4, which is characterized in that the switching that the S type heater is connected
The width of plate and the width difference of S type heater are less than 10 millimeters.
6. crystal silicon ingot casting heater according to claim 1, which is characterized in that the inner surface of the side upper heater and
The inner surface of the side lower heater is in the same plane.
7. crystal silicon ingot casting heater according to claim 1, which is characterized in that the side upper heater and the side
The distance between lower heater is 10 millimeters~60 millimeters.
8. crystal silicon ingot casting heater according to claim 1, which is characterized in that the resistance of the side lower heater is little
In the sum of side upper heater and the concatenated resistance of top heater；The resistance of the side upper heater, which is less than on side, to be heated
The 1/2 of the sum of device and the concatenated resistance of top heater.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821924498.0U CN209456615U (en) | 2018-11-21 | 2018-11-21 | Crystal silicon ingot casting heater |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821924498.0U CN209456615U (en) | 2018-11-21 | 2018-11-21 | Crystal silicon ingot casting heater |
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| CN209456615U true CN209456615U (en) | 2019-10-01 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109402734A (en) * | 2018-11-21 | 2019-03-01 | 江苏协鑫硅材料科技发展有限公司 | Crystal silicon ingot casting heater and its application method |
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2018
- 2018-11-21 CN CN201821924498.0U patent/CN209456615U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109402734A (en) * | 2018-11-21 | 2019-03-01 | 江苏协鑫硅材料科技发展有限公司 | Crystal silicon ingot casting heater and its application method |
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