CN206512311U - Polycrystalline silicon ingot or purifying furnace - Google Patents
Polycrystalline silicon ingot or purifying furnace Download PDFInfo
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- CN206512311U CN206512311U CN201720093276.8U CN201720093276U CN206512311U CN 206512311 U CN206512311 U CN 206512311U CN 201720093276 U CN201720093276 U CN 201720093276U CN 206512311 U CN206512311 U CN 206512311U
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- heater
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- polycrystalline silicon
- silicon ingot
- purifying furnace
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Abstract
The utility model is related to a kind of polycrystalline silicon ingot or purifying furnace, including：Body of heater；The crucible in the body of heater is arranged at, for holding crystalline silicon；Positioned at the top heater of the crucible top；Positioned at the side heater of the crucible lateral wall；It is surrounded on the heat-insulation cage of the crucible lateral wall, top heater and side heater；Positioned at the bottom heater of the crucible bottom, the top heater, side heater or bottom heater are used to heat the crucible；Be arranged at the cooling device between bottom heater and the crucible bottom, for by cooling gas in the body of heater radiate.Above-mentioned polycrystalline silicon ingot or purifying furnace can be cooled down using the mode of the air cooling of above-mentioned cooling device to the bottom of above-mentioned crucible, due to crucible bottom it is quick, it is uniform radiate, be conducive to lifting Transverse Temperature Gradient uniformity.
Description
Technical field
The utility model is related to photovoltaic manufacture field, more particularly to a kind of polycrystalline silicon ingot or purifying furnace.
Background technology
Solar energy power generating is a kind of sustainable energy, is obtained for rapid development in various countries in recent years.At present should
With it is most common be crystal silicon solar energy battery, crystal silicon solar energy battery is mainly made up of monocrystalline silicon piece or polysilicon chip.Its
Middle polysilicon chip occupies leading position so that production capacity is high, energy consumption is low, cost is low, and ingot furnace is the core in polysilicon chip production process
Equipment.
The long brilliant process of current existing ingot furnace is cooled by lifting heat-insulation cage or drop heat insulation bottom board mode.With light
Volt industry is continued to develop, the increase of ingot furnace size, and this thermal field structure has that silicon ingot is bigger, and Isothermal Line Distribution is more uneven
Even, Transverse Temperature Gradient is bigger to wait difficult.
Utility model content
Based on this, it is necessary to be difficult to control to for above-mentioned ingot furnace thermal field structure thermal field, Isothermal Line Distribution it is uneven, laterally
There is provided a kind of uniform polycrystalline silicon ingot or purifying furnace of Transverse Temperature Gradient for the problem of thermograde is big.
A kind of polycrystalline silicon ingot or purifying furnace, including：
Body of heater；
The crucible in the body of heater is arranged at, for holding crystalline silicon；
Positioned at the top heater of the crucible top；
Positioned at the side heater of the crucible lateral wall；
Wrap up the heat-insulation cage of the crucible lateral wall, top heater and side heater；
Positioned at the bottom heater of the crucible bottom, the top heater, side heater and bottom heater
For being heated to the crucible；
And be arranged at the cooling device between bottom heater and the crucible bottom, for by cooling gas to institute
State radiating in body of heater.
Above-mentioned polycrystalline silicon ingot or purifying furnace can be carried out cold using the mode of the air cooling of above-mentioned cooling device to the bottom of above-mentioned crucible
But, due to crucible bottom it is quick, it is uniform radiate, be conducive to lifted Transverse Temperature Gradient uniformity.
In wherein one embodiment, the cooling device includes：
Heat exchange platform, with cavity in first；
The air inlet pipe of the heat exchange platform is connected to, cooling gas enters the heat exchange platform by the air inlet pipe
Hollow intracavitary；
The graphite column of the heat exchange platform is connected to, it is hollow into the heat exchange platform with cavity in second
The cooling gas of intracavitary is discharged outside body of heater by the graphite column.
In wherein one embodiment, the air inlet pipe is entered in the body of heater by the bottom of the body of heater.
In wherein one embodiment, the heat exchange platform is connected by the graphite upright supports.One wherein
In embodiment, the polycrystalline silicon ingot or purifying furnace also includes vavuum pump, for logical to the heat exchange platform by the air inlet pipe
Enter gas.
In wherein one embodiment, the bottom heater has at least one heating component, the heating component
Including：
A pair of fire-bars；
Two connecting plates between this pair of fire-bar are connected to, described two connecting plates are respectively arranged at the fire-bar
Two ends；
The graphite electrode of a connecting plate is disposed therein, so that electric current flows into described add by the graphite electrode
Hot bar.
In wherein one embodiment, the graphite electrode is stretched out outside body of heater by the side wall of the body of heater, with external
Heater circuit.
In wherein one embodiment, the bottom heater has three and is set up in parallel heating component, and this three add
Hot component shares a connecting plate relative with graphite electrode.
In wherein one embodiment, the operating power range of the bottom heater is 40KW to 80KW.
In wherein one embodiment, the polycrystalline silicon ingot or purifying furnace also includes：
It is arranged at the graphite protective plate between the crucible lateral wall and the side heater；
It is arranged at the graphite bottom plate between the crucible bottom plate and the bottom heater；
It is arranged at the top insulation board on the outside of the top heater；
It is arranged at the sidepiece warming plate on the outside of the side heater.
Brief description of the drawings
Fig. 1 is the overall structure diagram of the polycrystalline silicon ingot or purifying furnace of the preferred embodiment of the utility model one；
Fig. 2 is the structural representation of the bottom heater of the polycrystalline silicon ingot or purifying furnace of the preferred embodiment of the utility model one.
Embodiment
In order that the purpose of this utility model, technical scheme and advantage are more clearly understood, below in conjunction with accompanying drawing and implementation
Example, the utility model is further elaborated.It should be appreciated that specific embodiment described herein is only to explain
The utility model, is not used to limit the utility model.
It should be noted that when element is referred to as " being arranged at " another element, it can be directly on another element
Or can also have element placed in the middle.When an element is considered as " connection " another element, it can be directly connected to
To another element or it may be simultaneously present centering elements.Term as used herein " vertical ", " level ", " left side ",
For illustrative purposes only, it is unique embodiment to be not offered as " right side " and similar statement.
Unless otherwise defined, all of technologies and scientific terms used here by the article is led with belonging to technology of the present utility model
The implication that the technical staff in domain is generally understood that is identical.It is herein to be in term used in the description of the present utility model
The purpose of description specific embodiment, it is not intended that in limitation the utility model.Term as used herein " and/or " include
The arbitrary and all combination of one or more related Listed Items.
The preferred embodiment of the utility model one discloses a kind of polycrystalline silicon ingot or purifying furnace 100, and the polycrystalline silicon ingot or purifying furnace 100 is wrapped
Include body of heater 110, crucible 120, heat-insulation cage 130, heater and cooling device 150.
Specifically, above-mentioned crucible 120 is arranged in above-mentioned body of heater 110, for holding crystalline silicon, and the crystalline silicon is in the crucible
120 are grown.Above-mentioned heater includes top heater 141, side heater 142 and bottom heater 143, and top adds
Hot device 141 is located at the top of above-mentioned crucible 120, and side heater 142 is located at the lateral wall of above-mentioned crucible 120, and above-mentioned bottom adds
Hot device 143 is located at the bottom of above-mentioned crucible 120, and above-mentioned top heater 141, side heater 142 and bottom heater 143 are used
Heated in above-mentioned crucible 120.
Above-mentioned cooling device 150 is arranged on the downside of above-mentioned bottom heater 143, for by cooling gas to the stove
Radiating in vivo.Specifically, above-mentioned cooling device 150 includes heat exchange platform 151, air inlet pipe 152, graphite column 153, above-mentioned heat
Cavity (not shown) during switching plane 151 has first, this in first cavity be distributed in above-mentioned heat exchange platform interior, it is above-mentioned enter
Tracheae 152 is connected to the air inlet pipe of above-mentioned heat exchange platform 151, and cooling gas is flat into the heat exchange by the air inlet pipe
The hollow intracavitary of platform, cavity during above-mentioned graphite column 153 has second, this in second cavity through above-mentioned graphite column 153
Top and bottom, the cooling gas into above-mentioned heat exchange platform 151 can be discharged outside body of heater by the graphite column.
Above-mentioned air inlet pipe 152 can connect the centre position of the downside of heat exchange platform 151, so, by above-mentioned air inlet pipe 152
Cooling gas into above-mentioned switching plane 151 can promptly be spread from the above-mentioned centre position of heat exchange platform 151 to surrounding,
Reach and rapidly the bottom of crucible 120 is radiated using above-mentioned switching plane 151.
The position close to edge of the above-mentioned downside of the connection heat exchange of graphite column 153 platform 151, graphite column 153 should
The one side of graphite column 153 is used as the escape pipe for the cooling gas for entering heat exchange platform 151, the another aspect graphite column
153 are connected with the support of above-mentioned heat exchange platform 151, to be used as the above-mentioned support column for being used to support above-mentioned heat exchange platform 151.
Above-mentioned polycrystalline silicon ingot or purifying furnace 100 can also include a vavuum pump (not shown), the vavuum pump be used for connect it is above-mentioned enter
One end of tracheae 152 and graphite column 153, makes above-mentioned vavuum pump, air inlet pipe 152, heat exchange platform 151 and graphite column 153
Form the loop of a gas circuit.Power is provided by above-mentioned vavuum pump, gas enters above-mentioned heat exchange platform 151 by air inlet pipe 152, and
Cavity is fully absorbed in above-mentioned body of heater 110 in the first of heat exchange platform 151, particularly the heat close to the bottom of crucible 120
Amount, and cavity quickly takes away absorbed heat in pass through above-mentioned graphite column 153 second.Wherein, into the body of heater
Above-mentioned cooling gas pressure and body of heater in original pressure be consistent substantially, in the crystal growing stage of above-mentioned crystalline silicon,
Heat-insulation cage is not opened, crucible bottom is radiated by above-mentioned cooling gas.
In present embodiment, the gas for being passed through above-mentioned air inlet pipe 152 is inert gas, and such as inert gas can be argon
Gas etc..Above-mentioned vavuum pump is arranged on the outside of above-mentioned body of heater 110, and the vavuum pump can be Roots vaccum pump group, but this practicality
The new type not limited to this to vavuum pump, as long as the utility model purpose can be reached.
Above-mentioned bottom heater 143 has at least one heating component, present embodiment, and the heating component is three,
Each heating component includes a pair of fire-bars 1431, and this pair of fire-bar 1431 is arranged side by side, the fire-bar that this pair is arranged side by side
Opposite ends between 1431 are connected with two connecting plates, respectively the first connecting plate 1432 and the second connecting plate 1433, wherein
One connecting plate (being, for example, the first connecting plate 1432) is provided with graphite electrode 1434, and above-mentioned fire-bar 1431 passes through by by stone
Electrode ink 1434 enters the electric current of fire-bar 1431 and given off heat, and then the bottom of crucible 120 is heated.
Above three heating component is set up in parallel.Wherein, with the connecting plate of each opposite side of graphite electrode 1434 (for example
It is the second connecting plate 1433) three heating components are connected in one.In other words, three heating components share one and stone
The connecting plate 1433 of electrode ink 1434.
Above-mentioned graphite electrode 1434 is stretched out by the side wall of above-mentioned body of heater 110, with external heater circuit, is so conducive to carrying
The safety coefficient of high heater circuit, the line construction of its heater circuit is relatively simple.
In present embodiment, the operating power range of above-mentioned bottom heater is 40KW to 80KW.
Above-mentioned polycrystalline silicon ingot or purifying furnace 100 also includes graphite protective plate 161, graphite bottom plate 162, top insulation board 171 and sidepiece
Warming plate 172, above-mentioned graphite protective plate 161 is arranged between the lateral wall of the crucible 120 and the side heater 142；
Graphite bottom plate 162 is arranged between the bottom plate of the crucible 120 and bottom heater 143；Top insulation board 171 is arranged at institute
The outside of top heater 141 is stated, is incubated for the top to crucible 120；Sidepiece warming plate 172 is arranged at the sidepiece and added
The hot outside of device 142, is incubated for the side locations to crucible 120.
Above-mentioned polycrystalline silicon ingot or purifying furnace 100 loads above-mentioned crucible 120 firstly the need of the polysilicon for being up to certain purity requirement
In, and reach that body of heater is carried out after certain vacuum degree integrally hunts leak operation, lets out firstly the need of carrying out vacuumizing process by technological requirement
Leak rate meets requirement and proceeds heating process.Now above-mentioned heater is started working, when the temperature of crucible 120 reaches 1500
DEG C or so after, into process is melted, the power output of heater can use temperature control, pass through the change of temperature measurer detection temperature
Change regulation heater power, the temperature of top side bottom each position in stove is met technique initialization.Continuing will be solid after more than ten hour
State silicon material is all melted into liquid, and after a period of stabilisation, evaporates the impurity in silicon material and thermal field by high temperature, fill
Divide and discharge impurity.Then it is that crystal growth is prepared by near temperature drop to silicon crystalline temperature.
Crystal growing stage need not open above-mentioned heat-insulation cage 130, it is only necessary to crucible bottom is entered using above-mentioned cooling device 150
Row cooling.The heat of crucible bottom is taken out of outside body of heater 110, now bottom temp is reduced first, form temperature from bottom to top
Gradient, and then long brilliant speed is more stablized.
Above-mentioned polycrystalline silicon ingot or purifying furnace 100 can utilize the mode of the air cooling of above-mentioned cooling device 150 to the bottom of above-mentioned crucible 120
Portion cooled down, due to crucible bottom it is quick, it is uniform radiate, be conducive to lifting Transverse Temperature Gradient uniformity.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope of this specification record is all considered to be.
Embodiment described above only expresses several embodiments of the present utility model, and it describes more specific and detailed,
But therefore it can not be interpreted as the limitation to utility model patent scope.It should be pointed out that for the common skill of this area
For art personnel, without departing from the concept of the premise utility, various modifications and improvements can be made, these are belonged to
Protection domain of the present utility model.Therefore, the protection domain of the utility model patent should be determined by the appended claims.
Claims (10)
1. a kind of polycrystalline silicon ingot or purifying furnace, it is characterised in that including：
Body of heater；
The crucible in the body of heater is arranged at, for holding crystalline silicon；
Positioned at the top heater of the crucible top；
Positioned at the side heater of the crucible lateral wall；
Wrap up the heat-insulation cage of the crucible lateral wall, top heater and side heater；
Positioned at the bottom heater of the crucible bottom, the top heater, side heater and bottom heater are used for
The crucible is heated；
And be arranged at the cooling device between bottom heater and the crucible bottom, for by cooling gas to the stove
Radiating in vivo.
2. polycrystalline silicon ingot or purifying furnace according to claim 1, it is characterised in that the cooling device includes：
Heat exchange platform, with cavity in first；
The air inlet pipe of the heat exchange platform is connected to, cooling gas is entered in the heat exchange platform by the air inlet pipe
In cavity；
The graphite column of the heat exchange platform is connected to, with cavity in second, into the hollow intracavitary of heat exchange platform
Cooling gas by the graphite column discharge body of heater outside.
3. polycrystalline silicon ingot or purifying furnace according to claim 2, it is characterised in that the air inlet pipe is entered by the bottom of the body of heater
Enter in the body of heater.
4. polycrystalline silicon ingot or purifying furnace according to claim 2, it is characterised in that the heat exchange platform is by the graphite column
Support connection.
5. polycrystalline silicon ingot or purifying furnace according to claim 2, it is characterised in that the polycrystalline silicon ingot or purifying furnace also includes vacuum
Pump, for being passed through gas to the heat exchange platform by the air inlet pipe.
6. polycrystalline silicon ingot or purifying furnace according to claim 1, it is characterised in that the bottom heater adds with least one
Hot component, the heating component includes：
A pair of fire-bars；
Two connecting plates between this pair of fire-bar are connected to, described two connecting plates are respectively arranged at the two of the fire-bar
End；
The graphite electrode of a connecting plate is disposed therein, so that electric current flows into the heating by the graphite electrode
Bar.
7. polycrystalline silicon ingot or purifying furnace according to claim 6, it is characterised in that the side that the graphite electrode passes through the body of heater
Wall is stretched out outside body of heater, with external heater circuit.
8. polycrystalline silicon ingot or purifying furnace according to claim 6, it is characterised in that the bottom heater has three and set side by side
Heating component is put, three heating components share a connecting plate relative with graphite electrode.
9. polycrystalline silicon ingot or purifying furnace according to claim 1, it is characterised in that the operating power range of the bottom heater
For 40KW to 80KW.
10. polycrystalline silicon ingot or purifying furnace according to claim 1, it is characterised in that the polycrystalline silicon ingot or purifying furnace also includes：
It is arranged at the graphite protective plate between the crucible lateral wall and the side heater；
It is arranged at the graphite bottom plate between the crucible bottom plate and the bottom heater；
It is arranged at the top insulation board on the outside of the top heater；
And it is arranged at the sidepiece warming plate on the outside of the side heater.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720093276.8U CN206512311U (en) | 2017-01-22 | 2017-01-22 | Polycrystalline silicon ingot or purifying furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720093276.8U CN206512311U (en) | 2017-01-22 | 2017-01-22 | Polycrystalline silicon ingot or purifying furnace |
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| Publication Number | Publication Date |
|---|---|
| CN206512311U true CN206512311U (en) | 2017-09-22 |
Family
ID=59865979
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720093276.8U Active CN206512311U (en) | 2017-01-22 | 2017-01-22 | Polycrystalline silicon ingot or purifying furnace |
Country Status (1)
| Country | Link |
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| CN (1) | CN206512311U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107523864A (en) * | 2017-09-26 | 2017-12-29 | 深圳市石金科技股份有限公司 | The combination heater and polycrystalline silicon ingot or purifying furnace of a kind of polycrystalline silicon ingot or purifying furnace |
| CN114959917A (en) * | 2022-07-08 | 2022-08-30 | 安徽冠宇光电科技有限公司 | Solar polycrystalline silicon ingot furnace |
-
2017
- 2017-01-22 CN CN201720093276.8U patent/CN206512311U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107523864A (en) * | 2017-09-26 | 2017-12-29 | 深圳市石金科技股份有限公司 | The combination heater and polycrystalline silicon ingot or purifying furnace of a kind of polycrystalline silicon ingot or purifying furnace |
| CN114959917A (en) * | 2022-07-08 | 2022-08-30 | 安徽冠宇光电科技有限公司 | Solar polycrystalline silicon ingot furnace |
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