CN209345109U - Low-noise amplifier based on global noise counteracting method - Google Patents
Low-noise amplifier based on global noise counteracting method Download PDFInfo
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- CN209345109U CN209345109U CN201822131546.7U CN201822131546U CN209345109U CN 209345109 U CN209345109 U CN 209345109U CN 201822131546 U CN201822131546 U CN 201822131546U CN 209345109 U CN209345109 U CN 209345109U
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Abstract
Low-noise amplifier described in the utility model based on global noise counteracting method, the new amplifier circuit in low noise design of one kind and counteracting method are provided, to realize the noise cancellation of whole active devices by anti-phase addition at signal output node, reach the dual purpose taken into account noise-reduction coefficient and keep larger gain.Amplifier circuit in low noise is designed as double branch structures.The amplifier circuit in low noise, with the identical and full symmetric structure type of structure；Each branch is made of a common gate input stage and the common source amplification grade circuit with resistance feedback；Signal exports respectively after two branches in the drain electrode of two common sources from the source electrode input of two common gates；Active device in each branch, the noise at both ends along two branches, different directions, are transmitted separately to output node, and realization is added using the inverted relationship in output node and is offset.
Description
Technical field
It is integrated to belong to radio frequency for the low-noise amplifier for being able to offset the utility model relates to realize whole active device noises
Circuit field.
Background technique
With the fast development of wireless communication technique, increasingly higher demands are proposed to the performance of radio-frequency receiving system.
First order circuit of the low-noise amplifier as radio-frequency receiving system has conclusive work to the noiseproof feature of the system of reception
With.Low-noise amplifier amplifies small-signal as first order circuit, reprocesses for late-class circuit, but while amplification, low
The noise of noise amplifier can also be amplified by late-class circuit together with signal, so needing to optimize noise coefficient.It makes an uproar in addition to reducing
Other than sonic system number, it need to also make in terms of the key indexes such as input resistant matching, gain, bandwidth, power consumption and the linearity and accordingly change
Into.
Both traditional low-noise amplifier exists usually between input resistant matching and low-noise factor to be accepted or rejected, cannot
It takes into account.In order to break this choice, be born noise cancellation technique.Noise cancellation technique utilizes noise between circuit disparate modules
With the phase difference of signal, output signal is made to be added enhancing, and noise is added and offsets.
Noise cancellation technique relatively conventional at present has the low-noise amplifier of single spur track and double branch structures.Double branches
Structure, so that the signal between input pipe two electrodes of difference is reinforced in output, is made an uproar using the cooperation between main road and bypass
Sound is offset.Compared to the low-noise amplifier of single spur track, the low-noise amplifier of double branches all carries out the signal of two branches
Amplification, so that the total gain of signal becomes much larger, and the phase detuning between two branches is smaller, and the effect of noise cancellation is more
It is good.
The patent application of following scheme content as disclosed previously, application No. is CN201320460700.X, entitled one kind
Two-way noise cancellation type current multiplexing low-noise amplifier, the amplifier include common-source stage amplifier, altogether grid grade amplifier, signal
Network is received outside isolation and current multiplexing network and piece.Wherein, common-source stage amplifier includes that the first N-type metal oxide is brilliant
Body pipe (N1), first resistor (R1), 3rd resistor (R3), first capacitor (C1) and the 6th capacitor (C6)；Grid grade amplifier includes altogether
Second N-type MOS transistor (N2), second resistance (R2), the second capacitor (C2) and the 5th capacitor (C5)；Signal isolation
It include by the first inductance (L with current multiplexing network1) and third capacitor (C3) constitute the first resonant network, and by second electricity
Feel (L2) and the 4th capacitor (C4) the second resonant network etc. for constituting.
Although above-mentioned earlier application patent and double branch structures, its noise cancellation realized still belongs to existing conventional techniques
Means.The noise of input stage is offset using rear class auxiliary circuit, and the noise for only realizing two branch input stages supports
Disappear.For two branch whole active devices, the Method means and circuit structure design for carrying out noise cancellation still belong to blank,
It is difficult to reach and solves the requirement that global noise is offset.
In view of this, special propose present patent application.
Utility model content
Low-noise amplifier described in the utility model based on global noise counteracting method is to solve the above-mentioned prior art
There are the problem of and a kind of new amplifier circuit in low noise design and counteracting method are provided, to lead at signal output node
It crosses anti-phase addition and realizes the noise cancellations of whole active devices, reach and take into account noise-reduction coefficient and keep the double of larger gain
Weight purpose.
To realize above-mentioned purpose of design, the low-noise amplifier based on global noise counteracting method has structure phase
Same and full symmetric double branch structures, to greatly optimize noise coefficient.
Each branch is made of a common gate input stage and the common source amplification grade circuit with resistance feedback；Two
The source electrode of a common gate is as signal input part, the drain electrode of the common source amplification grade circuit described in two with resistance feedback
As signal output node.
Wherein, in each branch, the drain electrode connection common source with resistance feedback of common gate input stage amplifies
The grid of grade.
If above-mentioned Basic Design is conceived, only realized for double branch low-noise amplifiers that the prior art generallys use
The noise cancellation of input stage and the noise for failing to offset auxiliary circuit, i.e., only realize local noise cancellation.
What the application proposed is a kind of global noise cancellation technology, i.e., the noise of whole active devices in bucking circuit.
Based on the low-noise amplifier that global noise is offset, two branch takes full symmetric structure type.Grid altogether
Pole is as input stage, it is easy to accomplish input resistant matching；Common source amplified signal with resistance feedback improves gain.Signal
From the source electrode input of two common gates, respectively after two branches, in the drain electrode output of two common sources.
The common source amplifying stage with resistance feedback, by a NMOS tube, a PMOS tube and a resistance connect
It connects；NMOS tube is connect with PMOS tube in inverter structure, and the drain electrode of NMOS tube and PMOS tube is connected to output node；Institute
The resistance stated forms a feed-forward between NMOS tube and the drain and gate of PMOS tube.
It is improved by the above circuit structure, the noise at any one of foregoing circuit active device both ends can be along two
The different directions of a branch arrive separately at output node, and realization is finally added using the inverted relationship of phase and is offset.Signal
Input terminal and output end are then set separately in the junction of two symmetrical branches.
To sum up content, the low-noise amplifier based on global noise counteracting method have the advantage that
1, a kind of global noise cancellation technology is proposed, noise coefficient can be greatly optimized.
2, using double branch structures, while noise-reduction coefficient, double same Xiang Xiangjia of tributary signal improve circuit
Gain.
3, in the circuit design of two branches, phase mismatch is smaller, therefore noise cancellation effect is preferable.
4, using common gate as input stage, there is good input resistant matching.
5, without configuring inductance in amplifier circuit in low noise, therefore chip area can be made to smaller, be easy to drop
Low manufacture difficulty and control cost.
Detailed description of the invention
Fig. 1 is the transmission path schematic block diagram of signal；
Fig. 2 is the transmission path schematic block diagram of noise in branch 1；
Fig. 3 is the transmission path schematic block diagram of noise in branch 2；
Fig. 4 is the electrical block diagram of low-noise amplifier；
Fig. 5 is the transmission path schematic diagram of amplifier circuit in low noise signal；
Fig. 6 is the transmission path figure of the source electrode and drain electrode noise of metal-oxide-semiconductor M0；
Fig. 7 is the transmission path figure of the grid of metal-oxide-semiconductor M1 and metal-oxide-semiconductor M2, the noise that drains；
Fig. 8 is the transmission path figure of the source electrode of metal-oxide-semiconductor M3, the noise that drains；
Fig. 9 is the transmission path figure of the grid of metal-oxide-semiconductor M4 and metal-oxide-semiconductor M5, the noise that drains；
Figure 10 is the gain simulation result schematic diagram of amplifier circuit in low noise；
Figure 11 is the noise coefficient simulation result schematic diagram of amplifier circuit in low noise；
What the arrow in figure indicated is signal transmission direction.
Specific embodiment
The application is further described with reference to the accompanying drawings and examples.
Embodiment 1, as shown in Figure 1 to Figure 3, the method offset based on global noise, by amplifier circuit in low noise
It is designed as the identical and full symmetric double branch structures of structure.Wherein,
It is signal source input node and output node respectively in the junction of two branches.Consider in two branches respectively
Noise, so that the noise of two branches realizes noise cancellation all at output.
As shown in figure 4, each branch, the common source amplifying stage electricity by a common gate input stage and with resistance feedback
Road is constituted；Signal exports respectively after two branches in the drain electrode of two common sources from the source electrode input of two common gates；
Active device in each branch, the noise that both ends are formed are transmitted separately to along two branches, different directions
Output node is added realization using the inverted relationship in output node and offset.
In each branch of amplifier circuit in low noise, with resistance feedback described in the drain electrode connection of common gate input stage
The grid of common source amplifying stage；The common source amplifying stage with resistance feedback, by a NMOS tube, a PMOS tube and
One resistance is formed by connecting；NMOS tube is connect with PMOS tube in inverter structure, and the drain electrode that NMOS manages with PMOS tube is connected to
Output node；The resistance forms a feed-forward between NMOS tube and the drain and gate of PMOS tube.
In each branch of amplifier circuit in low noise, the source electrode of common gate input stage and the noise reverse phase of drain electrode；Leakage
When pole noise reaches output node, it is inverted once by the common source of branch where the common gate；Source electrode noise reaches output
When node, it is inverted once by the common source of another branch；When source electrode noise and drain electrode noise arrive separately at output node still
It is reverse phase, realizes and offset after addition.
In each branch of amplifier circuit in low noise, the common source amplifying stage with resistance feedback, drain electrode and
The noise in-phase of grid；Drain electrode noise is directly transferred to output node；Grid noise is successively after two branches, only by one
The common source reverse phase of branch is primary；In reverse phase when drain electrode noise and grid noise arrive separately at output node, realizes and support after addition
Disappear.
It is offset and is conceived based on global noise.The structure of two branches is identical, is all common gate as input pipe, realizes input
The matching of impedance.The output of common gate is connected to the common source with resistance feedback, realizes the function of amplification.It designs in this way
Purpose be guarantee two branches it is completely the same, phase mismatch is smaller, be also beneficial to reduce global noise offset design difficulty.
The metal-oxide-semiconductor of common gate connection, the noise reverse phase of source electrode and drain electrode have the MOS's of the common source connection of resistance feedback
Noise in-phase at drain and gate.The main thought of the design is exactly the difference and signal using two kinds of structural noise phases
With the difference of the transmission path of noise, the design that global noise is offset is realized.
As shown in figure 5, signal passes through two branches respectively from VIN, output point OUT all is reached by a reverse phase,
The junction same Xiang Xiangjia of two tributary signals realizes signal enhancing.
The transmission path of noise is then different from the transmission path of signal, and the transmission path of different active device noises
It is different.As shown in fig. 6, grid and drain electrode noise reverse phase, drain electrode noise pass through M1 and M2 when considering the noise of input pipe M0
The structure of composition is inverted primary reach and exports OUT point；And the source electrode noise of M0 is not inverted by the M3 of common gate, using
It is inverted once after the structure of M4 and M5 composition, is still reverse phase when the source electrode and drain electrode noise transmission of M0 is at output point OUT
, it realizes and offsets after addition.
When considering the noise of M1 and M2 of common source connection, as shown in fig. 7, there is the common source connection MOS of resistance feedback
Pipe, the noise in-phase of grid and drain electrode, the drain electrode noise of the two are transmitted directly to output OUT point, and grid noise then successively passes through
The M0 and M3 for crossing common gate connection, are not inverted, and using M4 and M5 that common source connects, are inverted primary.Final M1 and
Become reverse phase after the drain and gate noise transmission to output node of M2, realizes and offset after addition.
When consider common gate connection M3 noise when, source electrode and drain electrode noise reverse phase, drain electrode noise it is anti-by M4 and M5
Mutually primary, source electrode noise is also only primary by M1 and M2 reverse phase, after the source electrode and drain electrode noise transmission to output node of such M3 still
Reverse phase is realized after addition and is offset.As shown in Figure 8.
When considering the noise of M4 and M5 of the common source connection with resistance feedback, the two drain and gate noise is same
Phase, the two drain electrode noise are directly output to output node, grid noise only, the drain electrode of final M4 and M5 primary by M1 and M2 reverse phase
It is transferred to reverse phase at output node OUT with grid noise, realizes and offsets after addition.As shown in Figure 9.
By above-mentioned design, the counteracting for realizing all active device noises in integrated circuit, that is, realize global noise
It offsets, is no longer the noise cancellation for merely realizing input pipe M0 or M3.
From the point of view of simulation result, as shown in Figure 10 and Figure 11, it can be seen that maximum gain has reached 13.398dB, noise system
Number only has 1.762dB, this is very little in the design of low-noise amplifier.
It should be understood that for those of ordinary skills, it can be modified or changed according to the above description,
And all these modifications and variations all should belong to the protection scope of the appended claims for the utility model.
Claims (2)
1. a kind of low-noise amplifier based on global noise counteracting method has double subcircuits structures, it is characterised in that: two
A branch structure is identical and full symmetric；
Each branch is made of a common gate input stage and the common source amplification grade circuit with resistance feedback；Two institutes
The source electrode of common gate is stated as signal input part, the drain electrode conduct of the common source amplification grade circuit of resistance feedback is had described in two
Signal output node.
2. the low-noise amplifier according to claim 1 based on global noise counteracting method, it is characterised in that: each
In branch, the grid of the drain electrode connection common source amplifying stage with resistance feedback of common gate input stage；
The common source amplifying stage with resistance feedback, by a NMOS tube, a PMOS tube connected with a resistance and
At；
NMOS tube is connect with PMOS tube in inverter structure, and the drain electrode of NMOS tube and PMOS tube is connected to output node；
The resistance forms a feed-forward between NMOS tube and the drain and gate of PMOS tube.
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| CN201822131546.7U CN209345109U (en) | 2018-12-19 | 2018-12-19 | Low-noise amplifier based on global noise counteracting method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109802638A (en) * | 2018-12-19 | 2019-05-24 | 北京航空航天大学青岛研究院 | The low-noise amplifier and its method offset based on global noise |
| WO2023109425A1 (en) * | 2021-12-17 | 2023-06-22 | 深圳飞骧科技股份有限公司 | Power amplifier and radio frequency chip |
-
2018
- 2018-12-19 CN CN201822131546.7U patent/CN209345109U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109802638A (en) * | 2018-12-19 | 2019-05-24 | 北京航空航天大学青岛研究院 | The low-noise amplifier and its method offset based on global noise |
| CN109802638B (en) * | 2018-12-19 | 2023-09-15 | 北京航空航天大学青岛研究院 | Low noise amplifier based on global noise cancellation and method thereof |
| WO2023109425A1 (en) * | 2021-12-17 | 2023-06-22 | 深圳飞骧科技股份有限公司 | Power amplifier and radio frequency chip |
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