CN209184474U - Intelligent power module, household electrical appliance - Google Patents
Intelligent power module, household electrical appliance Download PDFInfo
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- CN209184474U CN209184474U CN201821839494.2U CN201821839494U CN209184474U CN 209184474 U CN209184474 U CN 209184474U CN 201821839494 U CN201821839494 U CN 201821839494U CN 209184474 U CN209184474 U CN 209184474U
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- switching tube
- bridge arm
- arm switching
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- lower bridge
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- 239000003990 capacitor Substances 0.000 claims description 5
- 229910002601 GaN Inorganic materials 0.000 description 41
- 238000010586 diagram Methods 0.000 description 14
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- 238000004590 computer program Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
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- 238000000034 method Methods 0.000 description 7
- 101100299614 Homo sapiens PTPN13 gene Proteins 0.000 description 6
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- 101150069896 PNP1 gene Proteins 0.000 description 6
- 102100033014 Tyrosine-protein phosphatase non-receptor type 13 Human genes 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 230000006378 damage Effects 0.000 description 3
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- 239000000463 material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004378 air conditioning Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
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- 238000004519 manufacturing process Methods 0.000 description 2
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- 230000008569 process Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000009514 concussion Effects 0.000 description 1
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The utility model discloses a kind of intelligent power module, household electrical appliance, the intelligent power module includes: bridge arm switching tube on first, bridge arm switching tube on second, bridge arm switching tube in third, wherein, bridge arm switching tube includes GaN device on bridge arm switching tube to third on first；First lower bridge arm switching tube, the second lower bridge arm switching tube, third lower bridge arm switching tube, wherein the first lower bridge arm switching tube to third lower bridge arm switching tube includes GaN device；Drive the first driver, the second driver, the third driver of bridge arm switching tube on bridge arm switching tube to third on first；Drive fourth drive of the first lower bridge arm switching tube to third lower bridge arm switching tube, the 5th driver, the 6th driver；And drive the first driver to third driver, the driving chip of fourth drive to the 6th driver.The intelligent power module of the utility model can be improved the unfailing performance of switch, give full play to the performance of intelligent power module.
Description
Technical field
This application involves field of home appliance technology, in particular to a kind of intelligent power module and a kind of household electrical appliance.
Background technique
Intelligent power module, i.e. IPM (Intelligent Power Module) are a kind of by power electronics and integrated electricity
The power drive class product that road technique combines.Device for power switching and high-voltage driving circuit are integrated in one by intelligent power module
It rises, and is built-in with the fault detection circuits such as overvoltage, overcurrent and overheat.On the one hand intelligent power module receives MCU (Micro
Controller Unit, micro-control unit) control signal, on the other hand driving subsequent conditioning circuit work examines the state of system
It surveys signal and sends MCU back to.Compared with traditional discrete scheme, intelligent power module is won with advantages such as its high integration, high reliability
Increasing market is particularly suitable for the frequency converter and various inverters of driving motor, is frequency control, metallurgical machinery,
Electric propulsion, servo-drive, a kind of desired power level electronic device of frequency-conversion domestic electric appliances.
In the related technology, as shown in Figure 1, inverter and gate driving circuit (HVIC) are integrated in one by intelligent power module
It rises.Wherein, inverter includes 6 silicon substrate IGBT (IGBT1-6) and 6 silicon substrate freewheeling diodes (FRD1-6) in parallel.
Applicants have found that: current intelligent power module internal power device is Si base device, and people are to Si power
The research of device is highly developed, and Si base power semiconductor performance will approach the limit of material properties, is difficult to pass through
The approach such as device architecture innovation and manufacturing process improvement increase substantially its overall performance.Due to the limitation of silicon materials, Si power
Device can only mostly work at 250 DEG C or less, and Si material critical breakdown electric field, in 250000V/cm or so, voltage endurance capability has
Limit.Moreover, Si power device high frequency performance is bad, there are apparent tail currents using most Si base IGBT, and very
Difficulty reduces or eliminates, this makes Si base IGBT have biggish turn-off power loss.It is continuous with power electronic technique application range
Expand, the continuous improvement that increasingly harsh application and people require power electronic equipment, be badly in need of with high pressure, high temperature,
Low-loss new material power semiconductor is to substitute traditional Si base power semiconductor.
In the related technology, as shown in Fig. 2, replacing Si base power semiconductor using GaN power transistor.IC is driven to drive
A monomer enhancement type gallium nitride transistor is moved, there is independent draw to fill output function.It is independent to draw filling output function that pass through change
Driving resistance R1, R2 on respective channel, control turns on and off the time respectively.
But present inventor has found that above-mentioned technology has the following technical problems: opening threshold value due to GaN power tube
Voltage is lower, thus it is relatively reliable using negative pressure shutdown, but the shutdown voltage of existing driving circuit is generally 0V, easily causes
Unreliable switch.In addition, existing GaN driving circuit is difficult to eliminate electricity since GaN power transistor is more sensitive to circuit interference
Road interference easily causes and opens by mistake logical or damage to GaN power transistor.
Utility model content
The embodiment of the present application can be improved the unfailing performance of switch by providing a kind of intelligent power module, household electrical appliance,
Give full play to the performance of intelligent power module.
The embodiment of the present application provides a kind of intelligent power module, comprising: bridge arm switching tube on first, bridge arm is opened on second
Bridge arm switching tube on Guan Guan, third, wherein bridge arm switching tube on described first, bridge arm switching tube on second, bridge arm is opened in third
Closing Guan Jun includes GaN device；First lower bridge arm switching tube, the second lower bridge arm switching tube, third lower bridge arm switching tube, wherein institute
Stating the first lower bridge arm switching tube, the second lower bridge arm switching tube, third lower bridge arm switching tube includes GaN device；Drive described
First driver of bridge arm switching tube on one, the second driver of bridge arm switching tube, the driving third in driving described second
The third driver of upper bridge arm switching tube；It drives the fourth drive of the first lower bridge arm switching tube, drive under described second
5th driver of bridge arm switching tube, the 6th driver for driving the third lower bridge arm switching tube；And driving described first
Driver, the second driver, third driver, the fourth drive, the 5th driver, the 6th driver driving chip.
In addition, can also have the following additional technical features: according to the application intelligent power module set forth above
Specifically, first driver, the second driver, third driver, fourth drive, the 5th driver,
Six drivers include: negative voltage generating circuit, bridge arm switching tube, in the first end of the negative voltage generating circuit and described first
Bridge arm switching tube on two, in third under bridge arm switching tube, the first lower bridge arm switching tube, the second lower bridge arm switching tube, third
One control terminal is connected in bridge arm switching tube, and the second end of the negative voltage generating circuit is connected with the driving chip.
Specifically, the negative voltage generating circuit includes: first resistor, in the first end of the first resistor and described first
Bridge arm switching tube, bridge arm switching tube on second, bridge arm switching tube, the first lower bridge arm switching tube, the second lower bridge arm in third
One control terminal is connected in switching tube, third lower bridge arm switching tube, the second end of the first resistor and the driving chip
It is connected；The capacitor in parallel with the first resistor；Second resistance, the of the first end of the second resistance and the first resistor
One end is connected, the second end ground connection of the second resistance.
Specifically, first driver, the second driver, third driver, fourth drive, the 5th driver,
Six drivers further include: inductance, the first end of the inductance are connected with the second end of the first resistor, and the second of the inductance
Bridge arm switching tube on end and described first, bridge arm switching tube on second, bridge arm switching tube, first lower bridge arm switch in third
One control terminal is connected in pipe, the second lower bridge arm switching tube, third lower bridge arm switching tube.
Specifically, first driver, the second driver, third driver, fourth drive, the 5th driver,
Six drivers also include: voltage regulator circuit, the voltage regulator circuit be connected to the negative voltage generating circuit and the driving chip it
Between.
Specifically, the voltage regulator circuit includes: first diode, the anode of the first diode and the driving chip
It is connected；The cathode of second diode, second diode is connected with the cathode of the first diode, second diode
Plus earth.
Specifically, first driver, the second driver, third driver, fourth drive, the 5th driver,
Six drivers also include: peak voltage eliminates circuit, and the peak voltage elimination circuit is defeated with the negative voltage generating circuit
Outlet is connected.
Specifically, it includes: 3rd resistor that the peak voltage, which eliminates circuit, the first end of the 3rd resistor and described the
The first end of one resistance is connected；Switching tube, the control terminal of the switching tube is connected with the second end of the 3rd resistor, described to open
The first end for closing pipe is connected with the first end of the first resistor, the second end ground connection of the switching tube.
This application provides a kind of household electrical appliance, including above-mentioned intelligent power module.
Wherein, household electrical appliance can be air conditioner.
One or more technical solution provided by the present application, has at least the following technical effects or advantages:
1, may be implemented 6V open with negative pressure turn off, relatively reliable switch performance is provided；
2, due to voltage spikes and circuit interference can be eliminated, it is further provided the reliability of driving gives full play to GaN device
Performance.
Detailed description of the invention
The application is above-mentioned and/or additional aspect and advantage will become from the following description of the accompanying drawings of embodiments
Obviously and it is readily appreciated that, in which:
Fig. 1 is the circuit structure diagram of intelligent power module in the related technology；
Fig. 2 is the drive circuit schematic diagram of GaN device in the related technology；
Fig. 3 is the block diagram of the intelligent power module of the embodiment of the present application one；
Fig. 4 is the circuit structure diagram of the intelligent power module of the embodiment of the present application one；And
Fig. 5 is the circuit structure diagram of driver and driving chip in the intelligent power module of the embodiment of the present application one.
Specific embodiment
In order to solve in the prior art, due to GaN power tube to open threshold voltage lower, so more using negative pressure shutdown
Add reliably, still, the shutdown voltage of driving circuit is generally 0V, easily causes unreliable switch.In addition, since GaN power is brilliant
Body pipe is more sensitive to circuit interference, and GaN driving circuit is difficult to eliminate circuit interference, easily causes to open by mistake and lead to or to GaN function
The problem of rate transistor damages, a kind of intelligent power module provided by the present application, can be realized 6V open with negative pressure turn off,
Relatively reliable switch performance is provided, while due to voltage spikes and circuit interference can also be eliminated, it is further provided the reliability of driving,
Give full play to the performance of GaN device.
In order to better understand the above technical scheme, the exemplary reality of the disclosure is more fully described below with reference to accompanying drawings
Apply example.Although showing the exemplary embodiment of the disclosure in attached drawing, it being understood, however, that may be realized in various forms this public affairs
It opens and should not be limited by the embodiments set forth herein.It is to be able to thoroughly understand this on the contrary, providing these embodiments
It is open, and the scope of the present disclosure can be fully disclosed to those skilled in the art.
The intelligent power module and and household electrical appliance of the embodiment of the present application described with reference to the accompanying drawing.
Embodiment one
Fig. 3 is the block diagram of the intelligent power module of the embodiment of the present application one.Fig. 4 is the intelligence of the embodiment of the present application one
The circuit structure diagram of energy power module.
As shown in Figure 3 and Figure 4, the intelligent power module of the embodiment of the present application, it may include: bridge arm switching tube, on first
Bridge arm switching tube on two, bridge arm switching tube in third, the first lower bridge arm switching tube, the second lower bridge arm switching tube, third lower bridge arm
Switching tube drives the first driver of bridge arm switching tube on first, the second driver of bridge arm switching tube, driving in driving second
The third driver of bridge arm switching tube in third drives fourth drive, the second lower bridge arm of driving of the first lower bridge arm switching tube
5th driver of switching tube, the 6th driver for driving third lower bridge arm switching tube, the first driver of driving, the second driving
Device, third driver, fourth drive, the 5th driver, the 6th driver driving chip 40.
Wherein, bridge arm switching tube 11 may include GaN1 device on first, and bridge arm switching tube 12 may include GaN3 device on second
Part, bridge arm switching tube 13 may include GaN5 device in third, and the first lower bridge arm switching tube 21 may include GaN2 device, the second lower bridge
Arm switch pipe 22 may include GaN4 device, and third lower bridge arm switching tube 23 may include GaN6 device.
First driver 31 is connected with bridge arm switching tube 11 on first, to drive the GaN1 on first in bridge arm switching tube 11
Device work；Second driver 32 is connected with bridge arm switching tube 12 on second, in bridge arm switching tube 12 in driving second
The work of GaN3 device；Third driver 33 is connected with bridge arm switching tube 13 in third, to drive in third in bridge arm switching tube 13
GaN5 device work；Fourth drive 34 is connected with the first lower bridge arm switching tube 21, to drive the first lower bridge arm switching tube 21
In GaN2 device work；5th driver 35 is connected with the second lower bridge arm switching tube 22, to drive the second lower bridge arm switching tube
GaN4 device work in 22；6th driver 36 is connected with third lower bridge arm switching tube 23, to drive third lower bridge arm to switch
GaN6 device work in pipe 23.
Driving chip 40 and the first driver, the second driver, third driver, fourth drive, the 5th driver,
Six drivers are connected, and give the first to the 6th driver with input drive signal, drive bridge arm switching tube on first, bridge arm on second
On switching tube, third in bridge arm switching tube GaN device work, driving the first lower bridge arm switching tube, the second lower bridge arm switching tube,
GaN device work in third lower bridge arm switching tube.
It should be noted that GaN device is third generation semiconductor-Wide Bandgap Semiconductor Power Devices, there is breakdown voltage
High, power density height, output power is high, working frequency is high, is suitble to the advantages that working under high temperature.GaN device is almost without switch
Loss and the loss of reversed freewheeling diode, although without diode, its characteristic with diode, i.e. GaN in device body
Device reverse-conducting has the characteristic of equivalent " diode ", so GaN device does not need external anti-paralleled diode, it is reversed extensive
Multiple function admirable, hard switching is high-efficient, is very promising power semiconductor.Switching characteristic, the driving skill of GaN device
There were significant differences compared to Si MOSFET for art and loss mechanisms, how to realize the driving to GaN device, to playing its advantage, improve
Systematic entirety can be very crucial.
Below to the first driver, the second driver, third driver, fourth drive, the 5th driver, the 6th driving
The specific structure of device is described in detail.
In one embodiment of the application, as shown in figure 5, the first driver, the second driver, third driver,
Four drivers, the 5th driver, the 6th driver may each comprise: negative voltage generating circuit 37, the first end of negative voltage generating circuit 37
With first on bridge arm switching tube, bridge arm switching tube on second, in third under bridge arm switching tube, the first lower bridge arm switching tube, second
One control terminal is connected in bridge arm switching tube, third lower bridge arm switching tube, the second end and driving core of negative voltage generating circuit 37
Piece 40 is connected.That is, 40 output drive signal of driving chip is to negative voltage generating circuit 37, negative voltage generating circuit 37 is according to drive
Dynamic signal generates negative pressure signal, to provide negative pressure signal for GaN device.
Further, negative voltage generating circuit 37 can include: first resistor R1, the capacitor C1 in parallel with first resistor R1 and
Two resistance R2.Wherein, bridge arm switching tube in the first end of first resistor R1 and first, bridge arm switching tube on second, bridge in third
Arm switch pipe, the first lower bridge arm switching tube, the second lower bridge arm switching tube, one control terminal phase in third lower bridge arm switching tube
Even, the second end of first resistor R1 is connected with driving chip 40, the first end of second resistance R2 and the first end of first resistor R1
It is connected, the second end ground connection of second resistance R2.Wherein, it may be implemented by adjusting first resistor R1 and second resistance R2 to negative pressure
The adjusting for the vacuum magnitude that generation circuit 37 exports.
Referring to Fig. 5, the first driver, the second driver, third driver, fourth drive, the 5th driver, the 6th are driven
Dynamic device also may each comprise: inductance L1, and the first end of inductance L1 is connected with the second end of first resistor R1, the second end of inductance L1 with
Bridge arm switching tube on first, bridge arm switching tube on second, bridge arm switching tube, the first lower bridge arm switching tube, the second lower bridge in third
One control terminal is connected in arm switch pipe, third lower bridge arm switching tube.Wherein, since the output signal of driving chip 40 exists
High frequency oscillation signal can eliminate circuit concussion by inductance L1.
Referring to Fig. 5, the first driver, the second driver, third driver, fourth drive, the 5th driver, the 6th are driven
Dynamic device also may each comprise: voltage regulator circuit 38, and voltage regulator circuit 38 is connected between negative voltage generating circuit 37 and driving chip 40.
Further, voltage regulator circuit 38 can include: first diode D1 and the second diode D2, wherein first diode
The anode of D1 is connected with driving chip 40, and the cathode of the second diode D2 is connected with the cathode of first diode D1, the two or two pole
The plus earth of pipe D2.Zener diode (first diode and the second diode) D1 and D2 can be by 40 output end of driving chip
The positive regulation of OUT output is in suitable range.
Referring to Fig. 5, the first driver, the second driver, third driver, fourth drive, the 5th driver, the 6th are driven
Dynamic device may also include that peak voltage eliminates circuit 39, and peak voltage eliminates the output end phase of circuit 39 and negative voltage generating circuit 37
Even.
Further, peak voltage eliminates circuit 39 can include: 3rd resistor R3 and switching tube PNP1, wherein third electricity
The first end of resistance R3 is connected with the first end of first resistor R1, the control terminal and the second end phase of 3rd resistor R3 of switching tube PNP1
Even, the first end of switching tube PNP1 is connected with the first end of first resistor R1, the second end ground connection of switching tube PNP1.Pass through adjusting
The size of 3rd resistor R3 may be implemented regulating switch pipe PNP1 and open condition.
Wherein, bridge arm switching tube, bridge arm switching tube on second, the device in third in bridge arm switching tube on first
When (GaN1, GaN3, GaN5) is opened, the first lower bridge arm switching tube, the second lower bridge arm switching tube, in third lower bridge arm switching tube
The voltage at device (GaN2, GaN4, GaN6) drain electrode and source electrode both ends increases suddenly, because of the presence of its parasitic capacitance, can generate
One positive spike.When the GaN device in lower bridge arm switching tube is opened, the leakage of the GaN device in upper bridge arm switching tube
Pole and source electrode both end voltage increase suddenly, it is also possible to generate direct impulse spike.If the value of forward voltage spike has been more than GaN
The threshold voltage value of device will result in misleading for switching device.Therefore, when the positive peak voltage of generation, control switch pipe
PNP1 conducting, can eliminate due to voltage spikes, prevent the damage of GaN device and open by mistake logical.
Specifically, the port IN of driving chip 40 receives signal from MCU, signal is turned on and off from OUT output.GaN
The grid and source voltage range of device are -10V~+7V, open optimum value and are generally 6V, so it is electric to need additional 6V to power
Pressure.Port VREG provides the voltage of 6V for GaN device, so can export the turning-on voltage signal of 6V from OUT, and when turning off then
Export 0V voltage signal.
When 40 output signal of driving chip is high level signal, voltage can be limited in by pressure stabilizing by voltage regulator circuit 38
The voltage value at circuit both ends, and if OUT output signal there are high frequency oscillation signals, can further be disappeared by inductance L1
It removes.Meanwhile when output is high level signal, charge to the capacitor C1 in negative voltage generating circuit 37, GaN device is opened at this time
It is logical；When 40 output signal of driving chip is low level signal, capacitor C1 electric discharge, and negative pressure signal is provided for GaN device, thus
It realizes the negative pressure shutdown of GaN device, to realize the reliable turn-off of GaN device, avoids losing using drawing tank way of output shutdown altogether
The possibility lost.
It should be noted that in order to which the application is described in detail, the circuit diagram of intelligent power module shown in fig. 5 is only used as this
One embodiment of application, the driver in figure indicate one of them of the first driver into the 6th driver, and GaN device is
Bridge arm switching tube on corresponding with driver first, bridge arm switching tube on second, bridge arm switching tube, the first lower bridge arm in third
Switching tube, the second lower bridge arm switching tube, the GaN device in third lower bridge arm switching tube.
In addition, the driver in the application is not limited to the intelligent power module of full GaN device, can also be used in comprising
The intelligent power module of GaN device, for example, in integrated PFC (Power Factor Correction, PFC) intelligence
In energy power module, PFC switching tube uses GaN device, can use the driver of the application accordingly, no longer be situated between in detail here
It continues.
As a result, the intelligent power module of the application may be implemented 6V open with negative pressure turn off, relatively reliable switch is provided
Can, it can also eliminate due to voltage spikes and circuit interference, it is further provided the reliability of driving gives full play to the performance of GaN device.
Technical solution in above-mentioned the embodiment of the present application, at least have the following technical effects or advantages:
1, may be implemented 6V open with negative pressure turn off, relatively reliable switch performance is provided；
2, due to voltage spikes and circuit interference can be eliminated, it is further provided the reliability of driving gives full play to GaN device
Performance.
In order to realize above-described embodiment, the application also proposes a kind of household electrical appliance comprising above-mentioned intelligent power module.
Wherein, household electrical appliance can be air conditioner, and air conditioner may include Domestic hanging air-conditioning, household vertical air conditioner and Household window type
Air-conditioning etc..
The household electrical appliance of the embodiment of the present application can be realized safe and reliable operation by above-mentioned intelligent power module.
It should be understood by those skilled in the art that, embodiments herein can provide as method, system or computer program
Product.Therefore, complete hardware embodiment, complete software embodiment or reality combining software and hardware aspects can be used in the application
Apply the form of example.Moreover, it wherein includes the computer of computer usable program code that the application, which can be used in one or more,
The computer program implemented in usable storage medium (including but not limited to magnetic disk storage, CD-ROM, optical memory etc.) produces
The form of product.
The application is referring to method, the process of equipment (system) and computer program product according to the embodiment of the present application
Figure and/or block diagram describe.It should be understood that every one stream in flowchart and/or the block diagram can be realized by computer program instructions
The combination of process and/or box in journey and/or box and flowchart and/or the block diagram.It can provide these computer programs
Instruct the processor of general purpose computer, special purpose computer, Embedded Processor or other programmable data processing devices to produce
A raw machine, so that being generated by the instruction that computer or the processor of other programmable data processing devices execute for real
The device for the function of being specified in present one or more flows of the flowchart and/or one or more blocks of the block diagram.
These computer program instructions, which may also be stored in, is able to guide computer or other programmable data processing devices with spy
Determine in the computer-readable memory that mode works, so that it includes referring to that instruction stored in the computer readable memory, which generates,
Enable the manufacture of device, the command device realize in one box of one or more flows of the flowchart and/or block diagram or
The function of being specified in multiple boxes.
These computer program instructions also can be loaded onto a computer or other programmable data processing device, so that counting
Series of operation steps are executed on calculation machine or other programmable devices to generate computer implemented processing, thus in computer or
The instruction executed on other programmable devices is provided for realizing in one or more flows of the flowchart and/or block diagram one
The step of function of being specified in a box or multiple boxes.
It should be noted that in the claims, any reference symbol between parentheses should not be configured to power
The limitation that benefit requires.Word "comprising" does not exclude the presence of component or step not listed in the claims.Before component
Word "a" or "an" does not exclude the presence of multiple such components.The application can be by means of including several different components
It hardware and is realized by means of properly programmed computer.In the unit claims listing several devices, these are filled
Several in setting, which can be, to be embodied by the same item of hardware.The use of word first, second, and third is not
Indicate any sequence.These words can be construed to title.
Although the preferred embodiment of the application has been described, it is created once a person skilled in the art knows basic
Property concept, then additional changes and modifications may be made to these embodiments.So it includes excellent that the following claims are intended to be interpreted as
It selects embodiment and falls into all change and modification of the application range.
Obviously, those skilled in the art can carry out various modification and variations without departing from this hair to the application
Bright spirit and scope.If in this way, these modifications and variations of the application belong to the claim of this application and its
Within the scope of equivalent technologies, then the application is also intended to include these modifications and variations.
Claims (10)
1. a kind of intelligent power module characterized by comprising
Bridge arm switching tube on first, bridge arm switching tube on second, bridge arm switching tube in third, wherein bridge arm is opened on described first
Guan Guan, bridge arm switching tube on second, bridge arm switching tube includes GaN device in third；
First lower bridge arm switching tube, the second lower bridge arm switching tube, third lower bridge arm switching tube, wherein first lower bridge arm is opened
Guan Guan, the second lower bridge arm switching tube, third lower bridge arm switching tube include GaN device；
The second driving for driving the first driver of bridge arm switching tube on described first, driving bridge arm switching tube on described second
The third driver of bridge arm switching tube on device, the driving third；
Drive the fourth drive of the first lower bridge arm switching tube, the 5th driving of driving the second lower bridge arm switching tube
6th driver of device, the driving third lower bridge arm switching tube；And
First driver, the second driver, third driver are driven, the fourth drive, the 5th driver, the 6th drive
The driving chip of dynamic device.
2. intelligent power module as described in claim 1, which is characterized in that first driver, the second driver, third
Driver, fourth drive, the 5th driver, the 6th driver include:
Negative voltage generating circuit, bridge arm switching tube in the first end of the negative voltage generating circuit and described first, bridge arm is opened on second
Bridge arm switching tube, the first lower bridge arm switching tube, the second lower bridge arm switching tube, third lower bridge arm switching tube on Guan Guan, third
In one control terminal be connected, the second end of the negative voltage generating circuit is connected with the driving chip.
3. intelligent power module as claimed in claim 2, which is characterized in that the negative voltage generating circuit includes:
First resistor, bridge arm switching tube in the first end of the first resistor and described first, bridge arm switching tube, third on second
Upper bridge arm switching tube, the first lower bridge arm switching tube, the second lower bridge arm switching tube, one control in third lower bridge arm switching tube
End processed is connected, and the second end of the first resistor is connected with the driving chip；
The capacitor in parallel with the first resistor；
Second resistance, the first end of the second resistance are connected with the first end of the first resistor, and the of the second resistance
Two ends ground connection.
4. intelligent power module as claimed in claim 3, which is characterized in that first driver, the second driver, third
Driver, fourth drive, the 5th driver, the 6th driver also include:
Inductance, the first end of the inductance are connected with the second end of the first resistor, the second end of the inductance and described the
Bridge arm switching tube on one, bridge arm switching tube on second, in third under bridge arm switching tube, the first lower bridge arm switching tube, second
One control terminal is connected in bridge arm switching tube, third lower bridge arm switching tube.
5. intelligent power module as claimed in claim 2, which is characterized in that first driver, the second driver, third
Driver, fourth drive, the 5th driver, the 6th driver also include:
Voltage regulator circuit, the voltage regulator circuit are connected between the negative voltage generating circuit and the driving chip.
6. intelligent power module as claimed in claim 5, which is characterized in that the voltage regulator circuit includes:
First diode, the anode of the first diode are connected with the driving chip；
The cathode of second diode, second diode is connected with the cathode of the first diode, second diode
Plus earth.
7. intelligent power module as claimed in claim 2, which is characterized in that first driver, the second driver, third
Driver, fourth drive, the 5th driver, the 6th driver further include:
Peak voltage eliminates circuit, and the peak voltage eliminates circuit and is connected with the output end of the negative voltage generating circuit.
8. intelligent power module as claimed in claim 7, which is characterized in that the peak voltage eliminates circuit and includes:
3rd resistor, the first end of the 3rd resistor are connected with the first end of first resistor；
Switching tube, the control terminal of the switching tube are connected with the second end of the 3rd resistor, the first end of the switching tube with
The first end of the first resistor is connected, the second end ground connection of the switching tube.
9. a kind of household electrical appliance, which is characterized in that including such as described in any item intelligent power module of claim 1-8.
10. household electrical appliance as claimed in claim 9, which is characterized in that the household electrical appliance are air conditioner.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821839494.2U CN209184474U (en) | 2018-11-08 | 2018-11-08 | Intelligent power module, household electrical appliance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821839494.2U CN209184474U (en) | 2018-11-08 | 2018-11-08 | Intelligent power module, household electrical appliance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209184474U true CN209184474U (en) | 2019-07-30 |
Family
ID=67363696
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821839494.2U Expired - Fee Related CN209184474U (en) | 2018-11-08 | 2018-11-08 | Intelligent power module, household electrical appliance |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209184474U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113345874A (en) * | 2020-03-02 | 2021-09-03 | 珠海零边界集成电路有限公司 | Intelligent power module, packaging structure and preparation method of packaging structure |
-
2018
- 2018-11-08 CN CN201821839494.2U patent/CN209184474U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113345874A (en) * | 2020-03-02 | 2021-09-03 | 珠海零边界集成电路有限公司 | Intelligent power module, packaging structure and preparation method of packaging structure |
| CN113345874B (en) * | 2020-03-02 | 2024-04-16 | 珠海零边界集成电路有限公司 | Intelligent power module, packaging structure and manufacturing method of packaging structure |
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