CN209166685U - Stress detection device and stress detection matrix system - Google Patents
Stress detection device and stress detection matrix system Download PDFInfo
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- CN209166685U CN209166685U CN201821619921.6U CN201821619921U CN209166685U CN 209166685 U CN209166685 U CN 209166685U CN 201821619921 U CN201821619921 U CN 201821619921U CN 209166685 U CN209166685 U CN 209166685U
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Abstract
The utility model discloses a kind of stress detection device and stress detection matrix system, stress detection device includes: silicon substrate and probe assembly, wherein silicon substrate setting is fluted, and probe assembly includes flexible substrate, two-dimensional layer material piece and detection circuit；Two-dimensional layer material piece is set to the surface of flexible substrate, and the surface of two-dimensional layer material piece and silicon substrate fits, and two-dimensional layer material piece forms a cavity in conjunction with above-mentioned groove；The two sides of above-mentioned groove are provided with electrode, and detection circuit and the electrode are electrically connected.Stress detection device disclosed by the utility model can measure the size of external stress, measurement result accuracy with higher indirectly by the situation of change of electric signal in measurement two-dimensional layer material piece.Meanwhile above-mentioned apparatus structure is simpler, can select the size of silicon substrate and probe assembly according to demand, therefore can also be applied to the stress measurement of micron-scale regions.
Description
Technical field
The utility model relates to stress detection technical field more particularly to a kind of stress detection devices and stress detection matrix
System.
Background technique
When object is deformed due to external cause (stress, humidity, temperature change etc.), phase can be being generated in object between each section
The internal force of interaction, the internal force on unit area are known as stress.Stress detection is worked as by the universal daily life that is applied to
In, wherein the fields such as instrument erection, sealing detection, automobile, ergonomics and package encapsulation, which have, widely answers in biologic medical
With, and bring huge economic value.
Currently, stress mornitoring equipment in the market is usually all that the principle detected using optical sensing or mechanical stress is carried out
Preparation, when in use, is detected by the way that stress signal is converted into electric signal.Common stress mornitoring device includes strain
Instrument, variable capacitance and piezoelectric device etc., structure is complicated for such detection device, and sensitivity is lower, and since volume is larger, is difficult
Stress measurement accurately is carried out to micron-sized region.
Utility model content
The main purpose of the utility model is to provide a kind of stress detection devices and stress detection matrix system, it is intended to solve
Stress detection device sensitivity certainly in the prior art is low, and volume is big, it is difficult to the technology of the stress of accurate measurement micron-scale regions
Problem.
To achieve the above object, the utility model first aspect provides a kind of stress detection device, which includes silicon lining
Bottom and probe assembly, the silicon substrate setting is fluted, and the probe assembly includes flexible substrate, two-dimensional layer material piece and spy
Slowdown monitoring circuit；
The two-dimensional layer material piece is set to the designated surface of the flexible substrate, the two-dimensional layer material piece and institute
The surface for stating silicon substrate fits, and the two-dimensional layer material piece forms a cavity in conjunction with the groove；
The two sides of the groove are provided with electrode, and the detection circuit and the electrode are electrically connected.
It optionally, is Ohmic contact relationship between the two-dimensional layer material piece and the electrode.
Optionally, the flexible substrate is macromolecule organic polymer, and the macromolecule organic polymer includes poly- methyl
At least one of methyl acrylate, polyvinyl alcohol and dimethyl silicone polymer.
Optionally, the two-dimensional layer material piece includes at least one of transient metal sulfide and black phosphorus.
Optionally, the detection circuit includes driving circuit, and the driving circuit is used for the two-dimensional layer material piece
Apply bias voltage.
Optionally, the detection circuit further includes amplification circuit of electrical signal and stress detection circuit, the electric signal amplification
Circuit is for amplifying the electric signal generated in the two-dimensional layer material piece, and the stress detection circuit is for detecting the two dimension
The electric signal being amplified in stratified material piece.
Optionally, the groove be by electron beam exposure or two-beam etch in the way of in surface of silicon processing and
At.
Optionally, the flexible substrate with a thickness of 10 μm~30 μm.
To achieve the above object, the utility model second aspect provides a kind of stress detection matrix system, the stress detection
Matrix system includes substrate and several stress detection devices, several described stress detection devices are according to preset arrangement mode
It is arranged in the surface of the substrate；
The stress detection device is the stress detection device that the utility model first aspect provides.
Stress detection device provided by the utility model embodiment, compared to existing technologies, the utility model will
Two-dimensional layer material piece is set to the surface of flexible substrate, then two-dimensional layer material piece is fitted in the surface of silicon substrate again,
A cavity is formed with the groove in silicon substrate, since shape occurs when external stress makes two-dimensional layer material piece be in hanging region
When change, the electrology characteristic of two-dimensional layer material piece itself will be changed, therefore pass through electric signal in measurement two-dimensional layer material piece
Situation of change, the size of external stress can be measured indirectly, and since two-dimensional layer material is very sensitive to external force,
Therefore measurement result can sensitivity and accuracy with higher.Meanwhile above-mentioned apparatus structure is simpler, can come according to demand
The size of silicon substrate and probe assembly is selected, therefore the stress measurement of micron-scale regions can also be applied to.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
It is some embodiments of the utility model, for those skilled in the art, without creative efforts, also
Other drawings may be obtained according to these drawings without any creative labor.
Fig. 1 is the section schematic diagram of stress detection device in the utility model embodiment；
Fig. 2 is the schematic perspective view of stress detection device in the utility model embodiment；
Fig. 3 is the structural schematic diagram of stress detection matrix system in the utility model embodiment.
Specific embodiment
It is practical below in conjunction with this to enable the purpose of this utility model, feature, advantage more obvious and understandable
Attached drawing in new embodiment, the technical scheme in the utility model embodiment is clearly and completely described, it is clear that institute
The embodiment of description is only the utility model a part of the embodiment, and not all embodiments.Based on the reality in the utility model
Apply example, those skilled in the art's every other embodiment obtained without making creative work belongs to this
The range of utility model protection.
Referring to Fig. 1, Fig. 1 is the section schematic diagram of stress detection device in the utility model embodiment, the utility model
In embodiment, above-mentioned apparatus includes silicon substrate 10 and probe assembly, and silicon substrate 10 is arranged fluted 11, and probe assembly includes flexibility
Substrate 21, two-dimensional layer material piece 22 and detection circuit.
Wherein, two-dimensional layer material piece 22 is set to the surface of flexible substrate 21, two-dimensional layer material piece 22 and silicon substrate
10 surface fits, and two-dimensional layer material piece 22 is combined with groove 11 and forms a cavity；The two sides of groove 11 are provided with electricity
Pole 12, detection circuit and electrode 12 are electrically connected.
Wherein, it is Ohmic contact relationship between two-dimensional layer material piece 22 and electrode 12, there is lower impedance.
In order to better understand the utility model embodiment, referring to figure 2., Fig. 2 is stress in the utility model embodiment
The schematic perspective view of detection device.
Wherein, flexible substrate 21 is macromolecule organic polymer, which includes polymethylacrylic acid
At least one of methyl esters, polyvinyl alcohol and dimethyl silicone polymer, have a flexible, high tensile and stronger anti-
The features such as tired.Wherein, substrate 102 with a thickness of 10 μm~30 μm.
In addition, the preparation method of flexible substrate 21 the following steps are included:
Step 1: macromolecule organic polymer powder is dissolved in specific solvent, is obtained based on macromolecule organic polymer
The solution of object；
Step 2: choosing suitable macromolecule organic polymer soln in vessel, is placed in drying in drying box, obtains phase
The film answered, the film can be used as the use of flexible substrate 21.
Wherein, two-dimensional layer material piece 22 includes at least one of transient metal sulfide and black phosphorus, wherein transition gold
Category sulfide is molybdenum disulfide, tungsten disulfide, two tungsten selenides, two selenizing molybdenums, zirconium diselenide, curing zirconium, stannic disulfide, two selenium
Change at least one in tin, two telluride tungsten, two telluride molybdenums, curing hafnium, two selenizing hafniums, two selenizing rheniums, rhenium disulfide and indium selenide
Kind.In addition, two-dimensional layer material piece 22 can grow preparation by chemical vapour deposition technique or mechanical stripping method obtains large area
The single layer of high quality and few layer.
Wherein, two-dimensional layer material piece 22 is a kind of semiconductor material, with the tunable electron energy band characteristic of stress.
Specifically, the two-dimensional layer material piece 22 of large area single layer or few layer is transferred to 21 surface of flexible substrate, it is flexible
The deformation on surface is occurred by the stress of external environment for substrate 21, to provide 22 surface of two-dimensional layer material piece corresponding
Stress.In addition, what is be subject to due to two-dimensional layer material piece 22 is indirect stress, material is avoided directly and outside
The contact of portion's environment, can effectively improve the service life of two-dimensional layer material piece 22.
In addition, carrier of the flexible substrate 21 as two-dimensional layer material piece 22, enables to two-dimensional layer material piece 22 equal
The even surface for being tightly attached to silicon substrate 10, anti-fatigue performance also with higher, further increases two-dimensional layer material piece 22
The mechanical strength of itself.
Wherein, above-mentioned electrode 12 is to be deposited by 11 two sides of groove using the mode of hot evaporation or magnetron sputtering, is used for
Bias voltage is applied to two-dimensional layer material piece 22, and amplification and detection are believed by the electric current of two-dimensional layer material piece 22 itself
Number, to realize the measurement to external stress variation.
Further, above-mentioned detection circuit includes driving circuit, and the driving circuit is for applying two-dimensional layer material piece 22
Add bias voltage.
Meanwhile above-mentioned detection circuit further includes amplification circuit of electrical signal and stress detection circuit, amplification circuit of electrical signal is used
The current signal generated in amplification two-dimensional stratified material piece 22, the amplified circuit signal of stress detection circuit probe, according to
The situation of change of the circuit signal detected can determine the stress that two-dimensional layer material piece 22 is subject to.
Wherein, groove 11 be by electron beam exposure or two-beam etch in the way of be process on 10 surface of silicon substrate.Tool
Body, the width of groove 11 is 10 μm -50 μm, and it is highly 5 μm -20 μm that length, which is 50 μm -100 μm,.Groove 11 is used as will be two-dimentional
The hanging device of stratified material piece 22, can make two-dimensional layer material piece 22 bend on surface when by stress,
And then the electrology characteristic of two-dimensional layer material piece 22 itself is changed, pass through the change of electric signal in detection two-dimensional layer material piece 22
Change situation, the stress that two-dimensional layer material piece 22 is subject to can be obtained.
Stress detection device provided by the utility model embodiment, compared to existing technologies, by two-dimensional layer material
Tablet is set to the surface of flexible substrate, is then covered in surface of silicon, forms a cavity with the groove in silicon substrate, due to
When external stress makes two-dimensional layer material piece be in hanging region deformation occurs when, two-dimensional layer material piece itself will be changed
Electrology characteristic, therefore by measurement two-dimensional layer material piece in electric signal situation of change, outside can be measured indirectly and answered
The size of power, and since two-dimensional layer material is very sensitive to external force, measurement result can sensitivity with higher
With accuracy.Meanwhile above-mentioned apparatus structure is simpler, can select the size of silicon substrate and probe assembly according to demand, therefore
It can also be applied to the stress measurement of micron-scale regions.
It further, is the structural schematic diagram of stress detection matrix system in the utility model embodiment referring to Fig. 3, Fig. 3,
Above-mentioned stress detection matrix system includes substrate 301 and several stress detection devices 302, several stress detection devices 302
The surface of substrate 301 is arranged according to preset arrangement mode.
Wherein, stress detection device 302 is stress detection device provided by the utility model above-described embodiment, specifically may be used
Referring to above-described embodiment, details are not described herein.
Wherein, mutually indepedent between several above-mentioned stress detection devices 302, when the above-mentioned stress detection matrix system of outer bound pair
When system applies stress, each stress detection device 302 in matrix system can be independent to suffered stress
It is detected accordingly, therefore the matrix system can be realized the precise measurement to stress distribution, measurement accuracy depends on stress
The size of detection device 302, investigative range is in micron dimension.
It is understood that if when the stress distribution in the region that stress detection matrix system is detected is uneven, respectively
Stress detected by a stress detection device 302 also can be different, thus according to detected by each stress detection device 302
The stress distribution situation of detection zone can be obtained in stress.
Stress detection matrix system provided by the utility model embodiment, by several stress detection devices 302 according to
The arrangement mode of matrix is arranged on substrate 301, carries out processing point by the stress that each stress detection device 302 detects
Analysis, can be obtained the distribution situation of stress suffered by institute's search coverage.
In the above-described embodiments, it all emphasizes particularly on different fields to the description of each embodiment, there is no the portion being described in detail in some embodiment
Point, it may refer to the associated description of other embodiments.
It is right the above are to a kind of description of stress detection device and stress detection matrix system provided by the utility model
In those skilled in the art, based on the idea of the embodiment of the present invention, can in specific embodiments and applications
There is change place, to sum up, the content of the present specification should not be construed as a limitation of the present invention.
Claims (9)
1. a kind of stress detection device, which is characterized in that described device includes silicon substrate and probe assembly, the silicon substrate setting
Fluted, the probe assembly includes flexible substrate, two-dimensional layer material piece and detection circuit；
The two-dimensional layer material piece is set to the surface of the flexible substrate, the two-dimensional layer material piece and the silicon substrate
Surface fit, and the two-dimensional layer material piece forms a cavity in conjunction with the groove；
The two sides of the groove are provided with electrode, and the detection circuit and the electrode are electrically connected.
2. device as described in claim 1, which is characterized in that be ohm between the two-dimensional layer material piece and the electrode
Contact relation.
3. device as described in claim 1, which is characterized in that the flexible substrate is macromolecule organic polymer, the height
Molecule organic polymer includes at least one of polymethyl methacrylate, polyvinyl alcohol and dimethyl silicone polymer.
4. device as described in claim 1, which is characterized in that the two-dimensional layer material piece include transient metal sulfide and
At least one of black phosphorus.
5. device as described in claim 1, which is characterized in that the detection circuit includes driving circuit, the driving circuit
For applying bias voltage to the two-dimensional layer material piece.
6. device as claimed in claim 5, which is characterized in that the detection circuit further includes amplification circuit of electrical signal and stress
Detection circuit, the amplification circuit of electrical signal is for amplifying the electric signal generated in the two-dimensional layer material piece, the stress
Detection circuit is for detecting the electric signal being amplified in the two-dimensional layer material piece.
7. the device as described in claim 1 to 6 any one, which is characterized in that the groove be using electron beam exposure or
The mode of two-beam etching is process in the surface of silicon.
8. device as claimed in claim 7, which is characterized in that the flexible substrate with a thickness of 10 μm~30 μm.
9. a kind of stress detection matrix system, which is characterized in that the stress detection matrix system includes that substrate is answered with several
Power detection device, several described stress detection devices are arranged in the surface of the substrate according to preset arrangement mode；
The stress detection device is stress detection device described in any one of claim 1 to 8.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821619921.6U CN209166685U (en) | 2018-09-30 | 2018-09-30 | Stress detection device and stress detection matrix system |
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| CN201821619921.6U CN209166685U (en) | 2018-09-30 | 2018-09-30 | Stress detection device and stress detection matrix system |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109282930A (en) * | 2018-09-30 | 2019-01-29 | 深圳大学 | Stress detection device and stress detection matrix system |
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2018
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109282930A (en) * | 2018-09-30 | 2019-01-29 | 深圳大学 | Stress detection device and stress detection matrix system |
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