CN208366907U - Flexible ion transducer based on two tungsten selenides - Google Patents
Flexible ion transducer based on two tungsten selenides Download PDFInfo
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- CN208366907U CN208366907U CN201820835809.XU CN201820835809U CN208366907U CN 208366907 U CN208366907 U CN 208366907U CN 201820835809 U CN201820835809 U CN 201820835809U CN 208366907 U CN208366907 U CN 208366907U
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Abstract
Flexible ion transducer based on two tungsten selenides, belongs to MEMS technology field.It is characterized in that, the sensor array is using two tungsten selenides as sensitive material；Sensor structure is followed successively by ionophore, boron nitride layer, two selenizing tungsten layers, flexible substrates from top to bottom.Two selenizing tungsten layer both ends are connected with metal electrode；Ionophore with a thickness of 20-200 microns；Boron nitride layer is single-layer or multi-layer；Metal electrode material selects any one in Au, Ag, Cu, Al, Pt, with a thickness of 20-200 nanometers；Two selenizing tungsten layers are single-layer or multi-layer；The upper surface of two selenizing tungsten layers is completely covered by ionophore and boron nitride layer.The utility model using two tungsten selenides as sensitive material, boron nitride as protective layer, ionophore alternatively layer, sensitivity, the stability, selectivity of flexible ion transducer can be promoted, and make sensor with excellent bend resistance ability, and easy to process.
Description
Technical field
The utility model relates to MEMS technology fields, in particular to based on the flexible ion transducer of two tungsten selenides.
Background technique
It is not 0 that two tungsten selenide of two-dimensional material, which has great specific surface area, extremely low noise, forbidden bandwidth, these characteristics
Determine that the sensor based on two tungsten selenides has high sensitivity and extremely low Monitoring lower-cut；Two tungsten selenides can pass through chemistry
The preparation of vapour deposition process large area, it is easy to process, there are integrated potentiality；Two tungsten selenides breaking strain with higher, tool
There is excellent bend resistance ability, wearable flexible device generally requires to generate larger deformation, therefore two tungsten selenides are as flexibility
The ideal chose of sensor sensing material.Have not yet to see the relevant report of two tungsten selenide ion transducers.
Two tungsten selenides are as main problem existing for sensitive material: 1, two tungsten selenide upper surfaces are chronically exposed in air,
Oxygen, water vapour etc. can make its electrology characteristic gradually degenerate, and so that device performance is generated obvious drift, influence long-time stability.2,
The poor selectivity of two tungsten selenides, can all generate response to any ion, can not differentiate in the actual liquid of complicated component tested
Ion.Therefore solve the problems, such as that the long-time stability of two tungsten selenide flexibility ion transducers and selectivity are emphasis.
Summary of the invention
In order to overcome the drawbacks of the prior art, the purpose of this utility model is to provide the flexible ions based on two tungsten selenides
Sensor can make sensor have high sensitivity and extremely low Monitoring lower-cut using two tungsten selenides as sensitive material, and
With excellent bend resistance ability；Boron nitride can promote the long-time stability of sensor as protective layer；Ionophore is as choosing
Layer is selected, solves the problems, such as sensor selectivity.
In order to achieve the above object, the utility model is realized by following methods:
Flexible ion transducer based on two tungsten selenides, which is characterized in that the sensor is followed successively by ion from top to bottom
Carrier 1-1, boron nitride layer 1-2, metal electrode 1-3, two selenizing tungsten layer 1-4 and flexible substrates 1-5, the two selenizings tungsten layer 1-4
Both ends are connected with metal electrode 1-3.
The ionophore 1-1 with a thickness of 20-200 microns.
The boron nitride layer 1-2 be single-layer or multi-layer, generally 1-10 layers.
Any one in described metal electrode 1-3 material selection Au, Ag, Cu, Al, Pt, with a thickness of 20-200 nanometers.
The two selenizings tungsten layer 1-4 be single-layer or multi-layer, generally 1-10 layers.
The upper surface of the two selenizings tungsten layer 1-4 is completely covered by boron nitride layer 1-2, ionophore 1-1 and boron nitride
Layer 1-2 surface area is all larger than equal to two selenizing tungsten layer 1-4；The ionophore 1-1 surface area is less than or equal to boron nitride layer 1-2 table
Area 1-2.
The beneficial effects of the utility model are:
(1) high sensitivity
The sensitivity of ion transducer depends on the specific surface area and band structure of sensitive material.Two tungsten selenides have very big
Specific surface area, and forbidden bandwidth is not 0, thus the utility model had based on the ion transducer of two tungsten selenides it is high
Sensitivity.
(2) bend resistance ability is strong
Wearable flexible sensor needs often to generate larger deformation.Two tungsten selenides as sensor sensing material are mechanical
Function admirable, breaking strain (not easy to break) with higher, therefore the bend resistance ability of the sensor of the utility model is strong.
(3) selectivity is good
Ionophore is covered in two tungsten selenide sensor surfaces, the interference of other ions in solution can be excluded, make to sense
Device is with resolution by the ability (having excellent selectivity) of measured ion.
(4) long-time stability are good
The long-time stability of ion transducer depend on the aerial stability of two tungsten selenide of sensitive material.In two selenizings
Tungsten surface covers boron nitride layer, and can avoid oxygen, water vapour etc. in air makes its electrology characteristic gradually degenerate, and promotes sensor
Long-time stability.
Detailed description of the invention
Fig. 1 is the side view of the flexible ion transducer based on two tungsten selenides of the utility model, in figure, 1-1-ion
Carrier, 1-2-boron nitride layer, bis- selenizing tungsten layer of 1-3-metal electrode, 1-4-, 1-5-flexible substrates.
Fig. 2 is the top view of the flexible ion transducer based on two tungsten selenides of the utility model, in figure, 1-1-ion
Carrier, bis- selenizing tungsten layer of 1-3-metal electrode, 1-4-, 1-5-flexible substrates.
Fig. 3 is the two tungsten selenide flexibility ion transducer flow process charts of the utility model.
Fig. 4 is response results figure of the two tungsten selenide ion transducers to various concentration sodium ion.
Specific embodiment
The technical solution of the utility model is described further below with reference to embodiment.
Referring to Fig.1, Fig. 2, the flexible ion transducer based on two tungsten selenides, which is characterized in that the sensor on to
Under be followed successively by ionophore 1-1, boron nitride layer 1-2, metal electrode 1-3, two selenizing tungsten layer 1-4, flexible substrates 1-5, described two
The selenizing both ends tungsten layer 1-4 are connected with metal electrode 1-3.
The ionophore 1-1 with a thickness of 20-200 microns.
The boron nitride layer 1-2 be single-layer or multi-layer, generally 1-10 layers, the thickness of boron nitride material be reduced to 10 layers or
When following, become two-dimensional material, material property is totally different from block boron nitride material.The metal electrode 1-3 material choosing
With any one in Au, Ag, Cu, Al, Pt, with a thickness of 20-200 nanometers.
The two selenizings tungsten layer 1-4 is single-layer or multi-layer, and generally 1-10 layers, the thickness of diselenide material is reduced to 10
Layer or it is following when, become two-dimensional material, material property is totally different from block diselenide material.
The upper surface of the two selenizings tungsten layer 1-4 is completely covered by boron nitride layer 1-2, ionophore 1-1 and boron nitride
Layer 1-2 surface area is all larger than equal to two selenizing tungsten layer 1-4；The ionophore 1-1 surface area is less than or equal to boron nitride layer 1-2 table
Area 1-2.
The two specific processing flow of tungsten selenide sensor array of the utility model is following (Fig. 3):
The preparation of (one) two tungsten selenide with it is graphical
Two tungsten selenide 1-4 are prepared using chemical vapour deposition technique.It is transferred them to by PDMS (dimethyl silicone polymer)
The surface flexible polymer PET (polyethylene terephthalate) substrate 1-5.Using photoetching and plasma dry etch technology
Realize that two tungsten selenides are graphical.
(2) sensor is processed
In the surface spin coating of flexible polymer PET base one layer of negative photoresist (spin coating machine speed 1000-4000RPM, time
30-90 seconds), 90-120 DEG C heating 1-2 minutes on hot plate.It is rear to dry (90-120 DEG C, 2-3 points by exposure (1-2 minutes)
Clock), keep it graphical with development (impregnating 1-2 minutes in RD6 developer solution).10 nano-titaniums, 50-100 are grown using sputtering technology
The gold of nano thickness.Sample is impregnated in acetone, and is assisted with sonic oscillation, it is therefore intended that removal photoresist and photoresist
The metal (stripping technology) of surface attachment.Metallic layer graphic is realized by stripping technology, forms metal electrode 1-3.PDMS will
The boron nitride 1-2 of chemical vapour deposition technique preparation is transferred to flexible polymer PET base surface.
(3) modified ion carrier
By spin-coating method in two tungsten selenide surface modifications, one leafing subcarrier solution.After 5-10 minutes, volatilize to solvent
Solid ionic carrier layer 1-1 is formed afterwards.A kind of ionophore can only (such as sodium ion carrier can only penetrate Na through a kind of ion+)。
Two tungsten selenide transducer calibrations and test
Two tungsten selenide sensors were submerged respectively using the standard ionomer solution of various concentration first, to 1-5 minutes sensors
The resistance value of two tungsten selenides between two metal electrodes is obtained using multimeter or semiconductor parametric tester measurement after stabilization,
Sensor can be specified with the changing rule of ion concentration by calibration process.Detected solution immersion sensor portion is used later
Point, compared to measure its resistance value after sensor stabilization, and with calibration result, and then can obtain in detected solution it is to be measured from
Sub- concentration value.Fig. 4 is two tungsten selenide ion transducers to the response results figure of various concentration sodium ion, shows two selenizing tungsten ions
The feasibility of sensor.
Working principle of the utility model is:
The diselenide sensor of the utility model has the structure of similar metal-oxide-semiconductor.The metal at the both ends diselenide (1-4)
The source electrode and drain electrode of the corresponding metal-oxide-semiconductor of electrode (1-3), ionophore (1-1) are equivalent to the grid of metal-oxide-semiconductor.By measured ion enter from
After subcarrier (1-1), (1-1) potential is made to generate variation, is equivalent to grid voltage variation, it is special so as to cause the conduction of diselenide
Property (resistivity) change.Grid voltage variable quantity is related with ion concentration is tested in solution.Therefore pass through measurement diselenide electricity
The variable quantity for learning characteristic (resistivity) can obtain the information of tested ion concentration.
Claims (6)
1. the flexible ion transducer based on two tungsten selenides, which is characterized in that the sensor is followed successively by ion load from top to bottom
Body (1-1), boron nitride layer (1-2), metal electrode (1-3), two selenizing tungsten layers (1-4) and flexible substrates (1-5), two selenizing
The tungsten layer both ends (1-4) are connected with metal electrode (1-3).
2. the flexible ion transducer according to claim 1 based on two tungsten selenides, which is characterized in that the ionophore
(1-1) with a thickness of 20-200 microns.
3. the flexible ion transducer according to claim 1 based on two tungsten selenides, which is characterized in that the boron nitride layer
(1-2) is single-layer or multi-layer, is 1-10 layers.
4. the flexible ion transducer according to claim 1 based on two tungsten selenides, which is characterized in that the metal electrode
Any one in (1-3) material selection Au, Ag, Cu, Al, Pt, with a thickness of 20-200 nanometers.
5. the flexible ion transducer according to claim 1 based on two tungsten selenides, which is characterized in that two tungsten selenide
Layer (1-4) is single-layer or multi-layer, is 1-10 layers.
6. the flexible ion transducer according to claim 1 based on two tungsten selenides, which is characterized in that two tungsten selenide
The upper surface of layer (1-4) is completely covered by boron nitride layer (1-2), and ionophore (1-1) and boron nitride layer (1-2) surface area are equal
More than or equal to two selenizing tungsten layers (1-4)；Ionophore (1-1) surface area is less than or equal to boron nitride layer (1-2) surface area (1-
2)。
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| Application Number | Priority Date | Filing Date | Title |
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| CN201820835809.XU CN208366907U (en) | 2018-05-31 | 2018-05-31 | Flexible ion transducer based on two tungsten selenides |
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| CN201820835809.XU CN208366907U (en) | 2018-05-31 | 2018-05-31 | Flexible ion transducer based on two tungsten selenides |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108845017A (en) * | 2018-05-31 | 2018-11-20 | 清华大学 | A kind of flexible ion transducer based on two tungsten selenides |
| CN109297622A (en) * | 2018-11-08 | 2019-02-01 | 清华大学 | A kind of miniature piezoresistive strain gauge based on two tungsten selenides |
| CN116839768A (en) * | 2023-06-30 | 2023-10-03 | 济南大学 | Miniature piezoresistive stress sensor based on tungsten diselenide |
-
2018
- 2018-05-31 CN CN201820835809.XU patent/CN208366907U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108845017A (en) * | 2018-05-31 | 2018-11-20 | 清华大学 | A kind of flexible ion transducer based on two tungsten selenides |
| CN108845017B (en) * | 2018-05-31 | 2023-11-14 | 清华大学 | Flexible ion sensor based on tungsten diselenide |
| CN109297622A (en) * | 2018-11-08 | 2019-02-01 | 清华大学 | A kind of miniature piezoresistive strain gauge based on two tungsten selenides |
| CN109297622B (en) * | 2018-11-08 | 2024-02-02 | 清华大学 | Miniature piezoresistive stress sensor based on tungsten diselenide |
| CN116839768A (en) * | 2023-06-30 | 2023-10-03 | 济南大学 | Miniature piezoresistive stress sensor based on tungsten diselenide |
| CN116839768B (en) * | 2023-06-30 | 2024-02-20 | 济南大学 | Miniature piezoresistive stress sensor based on tungsten diselenide |
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