CN209139006U - The ultrasonic ultrasonic delay line memory driving circuit of Low-voltage Low-power - Google Patents
The ultrasonic ultrasonic delay line memory driving circuit of Low-voltage Low-power Download PDFInfo
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- CN209139006U CN209139006U CN201821621082.1U CN201821621082U CN209139006U CN 209139006 U CN209139006 U CN 209139006U CN 201821621082 U CN201821621082 U CN 201821621082U CN 209139006 U CN209139006 U CN 209139006U
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Abstract
The utility model discloses the ultrasonic ultrasonic delay line memory driving circuits of Low-voltage Low-power, applied to ultrasonic ultrasonic delay line memory, including metal-oxide-semiconductor, inductance L, diode D, resistance, capacitor and ultrasonic wave atomization circuit, DC2.7V to 6V power work electric current is 300MA to 1.5A, metal-oxide-semiconductor or DC-DC boost chip circuit structure form carry out charging, boosting and the atomization work of a period of time of a period of time to capacitor, and capacitor is made to gather biggish energy.Pwm signal is accessed in metal-oxide-semiconductor driving circuit and circuit reads signal to control the stability of input current, the atomization working time of access voltage detection signal control ultrasonic ultrasonic delay line memory；Electric current is accessed in DC-DC boost chip driving circuit and reads signal and current controling signal control input current stability, and ultrasonic wave atomization circuit controls the start and stop of atomization work by access atomizer working control signal.Ultrasonic ultrasonic delay line memory is set to generate good mist amount and depth of water adaptability, no setting is required energy gathering cap, realization is charged repeatedly is atomized working effect repeatedly.
Description
Technical field
The utility model relates to the ultrasonic ultrasonic delay line memories of ultrasonic ultrasonic delay line memory technical field more particularly to Low-voltage Low-power
Driving circuit.
Background technique
In daily life for humidifying, flavoring, sterilization or ornamental supersonic atomizer, can will be contained in liquid
Liquid in container is atomized the liquid by the ultrasonic wave that supersonic generator generates, to realize its atomizing functions, tradition is super
Sonic nebulizers are made of transduction piece and driving circuit, working frequency generally 1.7MHZ, 2MHZ, 2.4MHZ, 3MHZ,
3.3MHZ and 3.5MHZ etc., power, which is generally greater than 4 watts or more, could generate that enough energy make water atomization and reaching actually makes
Needs.For low-voltage use as be equal to 5V under conditions of, have actual use value atomizing effect institute
The energy needed can be bigger, and required energy is greater than 5W or more, and generally requires and reach 7.5W.Because only that being added in ultrasonic wave transducer
The amplitude of voltage on device is greater than a certain value, and frequency will be in the resonant frequency range of ultrasonic transducer, ultrasonic wave transducer
Device could generate good atomizing effect, be added in the bigger ultrasonic transducer generation of amplitude of the voltage on ultrasonic transducer
Atomizing effect is better.
The ultrasonic ultrasonic delay line memory for the 5V that current trend uses works using atomization circuit is supplied electricity to after boosting again, electricity
Stream will add energy gathering cap generally in 1A or more, can be only achieved good fog effect out, energy gathering cap, which is such as not added, and there is no makes
With value, and many undesirable consequences can be brought using energy gathering cap, such as be difficult to clean, be easy blistering and block fog hole without rising
Mist, provide it is a kind of do not need setting energy gathering cap be at low cost, low pressure and low-power consumption, compared with currently popular circuit, same
Input voltage, same input current, using same atomizing piece, the structure being equally atomized, the ultrasonic atomization of the technical program
For the mist amount that device generates than traditional big 1 times of mist amount or more, atomization water level wants 1.3 times or more that depth is traditional, and can improve
The ultrasonic ultrasonic delay line memory of atomization quantity is the eager demand in nowadays market, and has market potential.
Summary of the invention
In view of this, the present invention provides the ultrasonic ultrasonic delay line memory driving circuits of Low-voltage Low-power, on solving
State technical problem.
The ultrasonic ultrasonic delay line memory driving circuit of Low-voltage Low-power is applied to ultrasonic ultrasonic delay line memory, including metal-oxide-semiconductor, inductance
L, diode D, resistance, capacitor and ultrasonic wave atomization circuit further include DC-DC boost chip and zener diode ZD；
The resistance includes resistance R1, resistance R2 and resistance R3, and the capacitor includes capacitor C1 and capacitor C2；
The pole D of the metal-oxide-semiconductor is electrically connected second node, and pwm signal is accessed in the pole G, and the pole S is electrically connected the 5th node, and
Metal-oxide-semiconductor, inductance L and diode D are capacitor C2 charging, boosting, read signal in the 5th node access electric current and carry out voltage detecting；
The inductance L first end is electrically connected positive pole VCC and is electrically connected first node, and inductance L second end is electrical
Connection is electrically connected second node；
The diode D anode is electrically connected second node, and cathode is electrically connected third node；
The resistance R1 first end is electrically connected third node, and second end is electrically connected fourth node, connects in fourth node
Enter voltage detection signal, the resistance R2 first end is electrically connected the 5th node, second end ground connection, and resistance R3 first end electrically connects
Connect fourth node, second end ground connection；
The capacitor C1 is connected in parallel DC IN power positive cathode, and capacitor C1 also first end is electrically connected first node, and second
End ground connection, the capacitor C2 are connected in parallel ultrasonic wave atomization circuit, and capacitor C2 first end is electrically connected third node, the second termination
Ground；
First foot of DC-DC boost chip is electrically connected positive pole VCC, and crus secunda is electrically connected second node, the
Three feet are electrically connected the 5th node, and the 4th foot is electrically connected the 6th node, and DC-DC boost chip is boosted to capacitor C2,
Voltage control and regulation are carried out in the 6th node access current controling signal, when the voltage on capacitor C2 is greater than zener diode ZD's
When voltage of voltage regulation value adds the pressure stabilizing reference value of DC-DC boost chip, the boost voltage on capacitor C2 reaches setting value, DC-DC liter
Chip is pressed to stop boosting；
The ultrasonic wave atomization circuit accesses atomizer working control signal.
Further, it is DC2.7V that the capacitor C1, which is connected in parallel the input voltage regulation range of DC IN power positive cathode,
To DC6V, the voltage value preferentially used is 5V；Current margin is 300MA to 1.5A, and the operating current preferentially used is
700MA uses lithium battery power supply.
Further, the capacitor C2 charging time is T1, and T1 is 1ms ~ 300ms；When ultrasonic ultrasonic delay line memory is atomized work
Between T2, T2 be 0.5ms ~ 200ms.
Further, the voltage max Vmax of the capacitor C2 charging is 7V ~ 35V, and ultrasonic ultrasonic delay line memory is atomized work
Minimum voltage Vlow is 5V ~ 30V.
Further, the ultrasonic ultrasonic delay line memory atomization working time control can be detected by access voltage detection signal
The voltage of resistance R1 or resistance R3 are adjusted, by atomizer working control signal or by timing controlled ultrasonic ultrasonic delay line memory into
Row atomization work.
Further, the electric current reading signal of the 5th node access carrys out the voltage on detection resistance R2, then is converted into
Electric current carries out stabling current control with the duty ratio of the G of the metal-oxide-semiconductor pwm signal being extremely connected to control, or directly passes through circuit
Working sequence adjustment and the progress stabling current control of the duty ratio of the G of the metal-oxide-semiconductor pwm signal being extremely connected；
Or it is converted into electric current again and controls the signal of current controling end being connected with DC-DC boost chip and is stablized
Current control.
Further, the ultrasonic ultrasonic delay line memory, can be to the pole the S input PWM letter of metal-oxide-semiconductor when being atomized the work T2 period
Number.
Further, the drive cycle of the voltage waveform on the capacitor C2, capacitor C2 charging time T1 and ultrasonic fog
The time value different cycles of change device atomization working time T2 are can be different；
The driving voltage of voltage waveform on the capacitor C2, the voltage max Vmax and ultrasonic fog of capacitor C2 charging
The voltage value different cycles of change device atomization work minimum voltage Vlow are can be different.
Further, the metal-oxide-semiconductor and DC-DC boost chip connected in the ultrasonic ultrasonic delay line memory driving circuit is only respectively
The circuit structure form of vertical selection access.
Further, the ultrasonic wave atomization circuit is the circuit structure used in ultrasonic ultrasonic delay line memory industry field.
The beneficial effects of the utility model are: the ultrasonic ultrasonic delay line memory of the Low-voltage Low-power in the technical program drives electricity
Road and driving method, including metal-oxide-semiconductor, inductance L, diode D, resistance, capacitor and ultrasonic wave atomization circuit, further include DC-DC liter
Press chip and zener diode ZD；Input DC5V power work electric current is 300MA, is able to use low-voltage and low-power dissipation and carries out atomization work
Make, charging, boosting and one that metal-oxide-semiconductor or DC-DC boost chip circuit structure form carry out a period of time to capacitor is respectively adopted
The atomization work of section time, and capacitor is made to gather biggish energy.Compared with currently popular circuit, in same input voltage,
Same input current, using same atomizing piece, the structure being equally atomized, the mist that the ultrasonic ultrasonic delay line memory of the technical program generates
For amount than traditional big 1 times of mist amount or more, atomization water level wants 1.3 times or more that depth is traditional.
Pwm signal is accessed in metal-oxide-semiconductor driving circuit and circuit reads signal to control the stability of input current, access electricity
Pressure detection signal controls the atomization working time of ultrasonic ultrasonic delay line memory, and access electric current is read in DC-DC boost chip driving circuit
Signal and current controling signal control input current stability, allow the input current of DC5V power supply keep one substantially
Constant electric current, ultrasonic wave atomization circuit are controlled the starting of atomization work by access atomizer working control signal and stopped
Only, so that ultrasonic ultrasonic delay line memory generates good mist amount and depth of water adaptability, solution influences to be atomized because that energy gathering cap need to be arranged
The problem of effect, realizes that atomization working effect is repeated in charging repeatedly, achievees the purpose that operating on low voltage low-power consumption.
Detailed description of the invention
Attached drawing 1 is circuit connection concept view when accessing metal-oxide-semiconductor circuit structure form in the driving circuit of the utility model；
Attached drawing 2 is circuit connection when accessing DC-DC boost chip circuit structure form in the driving circuit of the utility model
Concept view；
The voltage that attached drawing 3 is the capacitor C2 of the utility model is regarded with the voltage waveform to charge and the atomization working time changes
Figure.
Specific embodiment
With reference to the accompanying drawing and specific embodiment, the utility model will be further described, in order to clearer reason
Solve the technical idea of the requires of the utility model protection.
Embodiment working principle, refering to shown in attached drawing 1, attached drawing 2 and attached drawing 3, the ultrasonic ultrasonic delay line memory of Low-voltage Low-power
Driving circuit is applied to ultrasonic ultrasonic delay line memory, including metal-oxide-semiconductor 1, inductance L, diode D, resistance, capacitor and ultrasonic atomization electricity
Road 2 further includes DC-DC boost chip and zener diode ZD；
The resistance includes resistance R1, resistance R2 and resistance R3, and the capacitor includes capacitor C1 and capacitor C2；
The pole D of the metal-oxide-semiconductor 1 is electrically connected second node b, and pwm signal is accessed in the pole G, and the pole S is electrically connected the 5th node e,
And metal-oxide-semiconductor 1, inductance L and diode D are capacitor C2 charging, boosting, read signal in the 5th node e access electric current and carry out voltage
Detection；
The inductance L first end is electrically connected positive pole VCC and is electrically connected first node a, and inductance L second end is electrical
Connection is electrically connected second node b；
The diode D anode is electrically connected second node b, and cathode is electrically connected third node c；
The resistance R1 first end is electrically connected third node c, and second end is electrically connected fourth node d, in fourth node d
Voltage detection signal is accessed, the resistance R2 first end is electrically connected the 5th node e, second end ground connection, resistance R3 first end electricity
Property connection fourth node d, second end ground connection；
The capacitor C1 is connected in parallel DC IN power positive cathode, and capacitor C1 also first end is electrically connected first node a, the
Two ends ground connection, the capacitor C2 are connected in parallel ultrasonic wave atomization circuit 2, and capacitor C2 first end is electrically connected third node c, and second
End ground connection；
3 first foot of DC-DC boost chip is electrically connected positive pole VCC, and crus secunda is electrically connected second node b,
Third foot is electrically connected the 5th node e, and the 4th foot is electrically connected the 6th node f, and DC-DC boost chip 3 is carried out to capacitor C2
Boosting carries out voltage control and regulation in the 6th node f access current controling signal, when the voltage on capacitor C2 is greater than two pole of pressure stabilizing
When the voltage of voltage regulation value of pipe ZD adds the pressure stabilizing reference value of DC-DC boost chip 3, the boost voltage on capacitor C2 reaches setting value,
DC-DC boost chip 3 stops boosting；
The ultrasonic wave atomization circuit 2 accesses atomizer working control signal.
The input voltage regulation range that the capacitor C1 is connected in parallel DC IN power positive cathode is DC2.7V to DC6V, excellent
The voltage value first used is 5V；The ultrasonic ultrasonic delay line memory atomization current margin is 300MA to 1.5A, the work preferentially used
It is 700MA as electric current, uses lithium battery power supply.
The capacitor C2 charging time is T1, and T1 is 1ms ~ 300ms；Ultrasonic ultrasonic delay line memory is atomized working time T2, and T2 is
0.5ms~200ms。
The voltage max Vmax of the capacitor C2 charging is 7V ~ 35V, and ultrasonic ultrasonic delay line memory is atomized work minimum voltage
Vlow is 5V ~ 30V.
Ultrasonic ultrasonic delay line memory atomization working time control can by access voltage detection signal come detection resistance R1 or
The voltage of resistance R3 is adjusted, and carries out atomization work by atomizer working control signal or by timing controlled ultrasonic ultrasonic delay line memory
Make.
The electric current of the 5th node e access reads signal and carrys out the voltage on detection resistance R2, then is converted into electric current to control
When making and carry out stabling current control with the duty ratio of the G of metal-oxide-semiconductor 1 pwm signal being extremely connected, or directly passing through the work of circuit
Sequence, which is adjusted, carries out stabling current control with the duty ratio of the G of metal-oxide-semiconductor 1 pwm signal being extremely connected；
Or it is converted into electric current again and controls the signal progress for the current controling end being connected with DC-DC boost chip 3 surely
Constant current control.
The ultrasonic ultrasonic delay line memory can input pwm signal to the pole S of metal-oxide-semiconductor when being atomized the work T2 period.
The drive cycle of voltage waveform on the capacitor C2, capacitor C2 charging time T1 and ultrasonic ultrasonic delay line memory are atomized work
Make time T2 time value different cycles be can be different；
The driving voltage of voltage waveform on the capacitor C2, the voltage max Vmax and ultrasonic fog of capacitor C2 charging
The voltage value different cycles of change device atomization work minimum voltage Vlow are can be different.
The metal-oxide-semiconductor 1 and DC-DC boost chip 3 connected in the ultrasonic ultrasonic delay line memory driving circuit is independent choice respectively
The circuit structure form of access.
The ultrasonic wave atomization circuit is the circuit structure used in ultrasonic ultrasonic delay line memory industry field.
In specific embodiment, refering to shown in attached drawing 1, attached drawing 2 and attached drawing 3, based on the driving circuit in above scheme, this skill
Art scheme ultrasonic ultrasonic delay line memory carries out driving atomization work using following implementation means:
Embodiment 1, refering to shown in attached drawing 1 and attached drawing 3, comprising the following steps:
Step 1: providing a kind of ultrasonic ultrasonic delay line memory driving circuit of Low-voltage Low-power, including metal-oxide-semiconductor 1, inductance L, two
Pole pipe D, resistance, capacitor and ultrasonic wave atomization circuit 2；
When selecting 1 circuit structure form of metal-oxide-semiconductor, pwm signal, the pole S one end access electricity are accessed in the pole G one end of metal-oxide-semiconductor 1
Stream reads signal, accesses voltage detection signal in fourth node d, in ultrasonic wave atomization circuit access atomizer job control letter
Number.
Step 2: initial charging phase, the metal-oxide-semiconductor 1, inductance L and diode D carry out charging work, electricity to capacitor C2
Appearance C2 charging time T1 is 1ms ~ 300ms, and the voltage max Vmax of capacitor C2 charging is 7V ~ 35V, fourth node d access electricity
Pressure detection signal carries out voltage detecting.
Step 3: ultrasonic ultrasonic delay line memory is atomized working stage:
Access 1 circuit structure form of metal-oxide-semiconductor: it is 0.5ms ~ 200ms, ultrasonic wave that ultrasonic ultrasonic delay line memory, which is atomized working time T2,
It is 5V ~ 30V that atomizer, which is atomized work minimum voltage Vlow, and ultrasonic ultrasonic delay line memory is atomized working time control can be by accessing voltage
Detection signal carrys out detection resistance R1 or the voltage of resistance R3 is adjusted, when detecting that resistance R1 or the voltage of resistance R3 rise to
When a certain value, atomization work is carried out by atomizer working control signal control ultrasonic ultrasonic delay line memory；
When detecting the voltage of resistance R1 or resistance R3 lower than a certain value, ultrasound is controlled by atomizer working control signal
Wave atomizer stops atomization work, or by timing controlled, stops ultrasonic ultrasonic delay line memory atomization work after a certain period of time, ultrasound
Metal-oxide-semiconductor 1, inductance L and diode D carry out charging work to capacitor C2 after wave atomizer stops atomization work, are recycled with this；
The electric current that input current stability contorting is accessed by the 5th node e reads signal come the voltage on detection resistance R2,
Be converted into electric current again control with the duty ratio of the G of metal-oxide-semiconductor 1 pwm signal being extremely connected, to reach acquisition stabling current, or straight
Connect the working sequence adjustment of oversampling circuit and the duty ratio of the G of metal-oxide-semiconductor 1 pwm signal being extremely connected, with reach obtain stablize it is electric
Stream.
Embodiment 2, refering to shown in attached drawing 2 and attached drawing 3, comprising the following steps:
Step 1: a kind of ultrasonic ultrasonic delay line memory driving circuit of Low-voltage Low-power is provided, including DC-DC boost chip,
Inductance L, diode D, zener diode ZD, resistance, capacitor and ultrasonic wave atomization circuit 2；
When selecting 3 circuit structure form of DC-DC boost chip, signal is read in the 5th node e access electric current, in the 6th
Node f accesses current controling signal, accesses atomizer working control signal in ultrasonic wave atomization circuit.
Step 2, initial charging phase, the DC-DC boost chip 3 are boosted to capacitor C2, the capacitor C2 charging time
T1 be 1ms ~ 300ms, capacitor C2 charging voltage max Vmax be 7V ~ 35V, the 6th node f access current controling signal into
The control of row voltage.
Step 3: ultrasonic ultrasonic delay line memory is atomized working stage:
Access 3 circuit structure form of DC-DC boost chip: ultrasonic ultrasonic delay line memory be atomized working time T2 be 0.5ms ~
200ms, it is 5V ~ 30V that ultrasonic ultrasonic delay line memory, which is atomized work minimum voltage Vlow, when the voltage on capacitor C2 is greater than zener diode
When the voltage of voltage regulation value of ZD adds the pressure stabilizing reference value of DC-DC boost chip 3, the boost voltage on capacitor C2 reaches setting value, DC-
DC boost chip 3 stops boosting, and ultrasonic ultrasonic delay line memory carries out atomization work, and ultrasonic ultrasonic delay line memory stops mist after a period of work
Chemical industry is made, and the storage energy of DC-DC boost chip 3 to capacitor C2 to charge after ultrasonic ultrasonic delay line memory stopping atomization work
Work, is recycled with this；
The electric current that input current stability contorting is accessed by the 5th node e reads signal come the voltage on detection resistance R2,
It is converted into electric current again and controls the signal for the current controling end being connected with DC-DC boost chip 3, to reach acquisition stabling current.
According in the embodiment above, the drive cycle of the voltage waveform on the capacitor C2, capacitor C2 charging time T1
And the time value different cycles of ultrasonic ultrasonic delay line memory atomization working time T2 be can be different；The drive of voltage waveform on capacitor C2
Dynamic voltage, the voltage value of the voltage max Vmax and ultrasonic ultrasonic delay line memory atomization work minimum voltage Vlow of capacitor C2 charging are not
Being with the period can be different；Ultrasonic ultrasonic delay line memory can input pwm signal to the pole S of metal-oxide-semiconductor when being atomized the work T2 period.
According in the embodiment above, embodiment is carried out under input DC 5V supply voltage and 300MA electric current, is not required to
Energy gathering cap is set, using 3MHZ or the atomizing piece of other frequencies.
The above are only specific embodiments of the present invention, and therefore it does not limit the scope of the patent of the utility model, all
Equivalent structure or equivalent flow shift made based on the specification and figures of the utility model, is applied directly or indirectly in
Other related technical areas are also included in the patent protection scope of the utility model.
Claims (10)
1. the ultrasonic ultrasonic delay line memory driving circuit of Low-voltage Low-power is applied to ultrasonic ultrasonic delay line memory, including metal-oxide-semiconductor (1), inductance
L, diode D, resistance, capacitor and ultrasonic wave atomization circuit (2), it is characterised in that: further include DC-DC boost chip (3) and steady
Press diode ZD；
The resistance includes resistance R1, resistance R2 and resistance R3, and the capacitor includes capacitor C1 and capacitor C2；
The pole D of the metal-oxide-semiconductor (1) is electrically connected second node (b), and pwm signal is accessed in the pole G, and the pole S is electrically connected the 5th node
(e), and metal-oxide-semiconductor (1), inductance L and diode D are capacitor C2 charging, boosting, read signal in the 5th node (e) access electric current
Carry out voltage detecting；
The inductance L first end is electrically connected positive pole VCC and is electrically connected first node (a), and inductance L second end electrically connects
It connects and is electrically connected second node (b)；
The diode D anode is electrically connected second node (b), and cathode is electrically connected third node (c)；
The resistance R1 first end is electrically connected third node (c), and second end is electrically connected fourth node (d), in fourth node
(d) voltage detection signal is accessed, the resistance R2 first end is electrically connected the 5th node (e), second end ground connection, resistance R3 first
End is electrically connected fourth node (d), second end ground connection；
The capacitor C1 is connected in parallel DC IN power positive cathode, and capacitor C1 also first end is electrically connected first node (a), and second
End ground connection, the capacitor C2 are connected in parallel ultrasonic wave atomization circuit (2), and capacitor C2 first end is electrically connected third node (c), the
Two ends ground connection；
(3) first foot of DC-DC boost chip is electrically connected positive pole VCC, and crus secunda is electrically connected second node (b),
Third foot is electrically connected the 5th node (e), and the 4th foot is electrically connected the 6th node (f), and DC-DC boost chip (3) gives capacitor
C2 boosts, and voltage control and regulation is carried out in the 6th node (f) access current controling signal, when the voltage on capacitor C2 is greater than
When the voltage of voltage regulation value of zener diode ZD adds the pressure stabilizing reference value of DC-DC boost chip (3), the boost voltage on capacitor C2 reaches
To setting value, DC-DC boost chip (3) stops boosting；
The ultrasonic wave atomization circuit (2) accesses atomizer working control signal.
2. the ultrasonic ultrasonic delay line memory driving circuit of Low-voltage Low-power according to claim 1, it is characterised in that: the electricity
Holding C1 to be connected in parallel the input voltage regulation range of DC IN power positive cathode is DC2.7V to DC6V, the voltage value preferentially used
It is 5V；The ultrasonic ultrasonic delay line memory atomization current margin is 300MA to 1.5A, and the operating current preferentially used is 700MA,
Use lithium battery power supply.
3. the ultrasonic ultrasonic delay line memory driving circuit of Low-voltage Low-power according to claim 1, it is characterised in that: the electricity
The appearance C2 charging time is T1, and T1 is 1ms ~ 300ms；Ultrasonic ultrasonic delay line memory is atomized working time T2, and T2 is 0.5ms ~ 200ms.
4. the ultrasonic ultrasonic delay line memory driving circuit of Low-voltage Low-power according to claim 1 or 3, it is characterised in that: institute
State capacitor C2 charging voltage max Vmax be 7V ~ 35V, ultrasonic ultrasonic delay line memory be atomized work minimum voltage Vlow be 5V ~
30V。
5. the ultrasonic ultrasonic delay line memory driving circuit of Low-voltage Low-power according to claim 1, it is characterised in that: described super
Sonic nebulizers be atomized working time control can by access voltage detection signal come the voltage of detection resistance R1 or resistance R3 into
Row is adjusted, and carries out atomization work by atomizer working control signal or by timing controlled ultrasonic ultrasonic delay line memory.
6. the ultrasonic ultrasonic delay line memory driving circuit of Low-voltage Low-power according to claim 1, it is characterised in that: described
The electric current of five nodes (e) access reads signal and carrys out the voltage on detection resistance R2, then is converted into electric current to control and metal-oxide-semiconductor (1)
The duty ratio of the extremely connected pwm signal of G carry out stabling current control, or directly by the working sequence adjustment of circuit and
The duty ratio of the G of metal-oxide-semiconductor (1) extremely connected pwm signal carries out stabling current control；
Or it is converted into electric current again and controls the signal of current controling end being connected with DC-DC boost chip (3) and is stablized
Current control.
7. the ultrasonic ultrasonic delay line memory driving circuit of Low-voltage Low-power according to claim 1 or 6, it is characterised in that: institute
Ultrasonic ultrasonic delay line memory is stated when being atomized the work T2 period, pwm signal can be inputted to the pole S of metal-oxide-semiconductor.
8. the ultrasonic ultrasonic delay line memory driving circuit of Low-voltage Low-power according to claim 1, it is characterised in that: the electricity
Hold the drive cycle of the voltage waveform on C2, the time of capacitor C2 charging time T1 and ultrasonic ultrasonic delay line memory atomization working time T2
Value different cycles are can be different；
The driving voltage of voltage waveform on the capacitor C2, the voltage max Vmax and ultrasonic ultrasonic delay line memory of capacitor C2 charging
The voltage value different cycles of atomization work minimum voltage Vlow are can be different.
9. the ultrasonic ultrasonic delay line memory driving circuit of Low-voltage Low-power according to claim 1, it is characterised in that: described super
The metal-oxide-semiconductor (1) and DC-DC boost chip (3) connected in Sonic nebulizers driving circuit is the circuit of independent choice access respectively
Structure type.
10. the ultrasonic ultrasonic delay line memory driving circuit of Low-voltage Low-power according to claim 1, it is characterised in that: described
Ultrasonic wave atomization circuit is the circuit structure used in ultrasonic ultrasonic delay line memory industry field.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821621082.1U CN209139006U (en) | 2018-10-08 | 2018-10-08 | The ultrasonic ultrasonic delay line memory driving circuit of Low-voltage Low-power |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821621082.1U CN209139006U (en) | 2018-10-08 | 2018-10-08 | The ultrasonic ultrasonic delay line memory driving circuit of Low-voltage Low-power |
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| CN209139006U true CN209139006U (en) | 2019-07-23 |
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ID=67268727
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111438026A (en) * | 2020-03-25 | 2020-07-24 | 广州厚达电子科技有限公司 | Driving method and driving circuit of ultrasonic atomizer |
| WO2023143065A1 (en) * | 2022-01-26 | 2023-08-03 | 深圳市合元科技有限公司 | Ultrasonic atomizer and working state determining method thereof |
-
2018
- 2018-10-08 CN CN201821621082.1U patent/CN209139006U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111438026A (en) * | 2020-03-25 | 2020-07-24 | 广州厚达电子科技有限公司 | Driving method and driving circuit of ultrasonic atomizer |
| CN111438026B (en) * | 2020-03-25 | 2022-03-11 | 广州厚达电子科技有限公司 | Driving method of ultrasonic atomizer |
| WO2023143065A1 (en) * | 2022-01-26 | 2023-08-03 | 深圳市合元科技有限公司 | Ultrasonic atomizer and working state determining method thereof |
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