CN209045502U - Wafer cleaning device - Google Patents
Wafer cleaning device Download PDFInfo
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- CN209045502U CN209045502U CN201822002990.9U CN201822002990U CN209045502U CN 209045502 U CN209045502 U CN 209045502U CN 201822002990 U CN201822002990 U CN 201822002990U CN 209045502 U CN209045502 U CN 209045502U
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- wafer
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Abstract
The utility model provides a kind of wafer cleaning device.Wafer cleaning device includes: wafer chuck, wafer chuck has hold assembly and load bearing component, hold assembly is set on load bearing component, and there are a pre-determined distances for the part of wafer to be cleaned and load bearing component face wafer to be cleaned for clamping wafer to be cleaned, and after clamping；The nozzle being oppositely arranged with wafer chuck, for the surface jet cleaner to wafer to be cleaned far from load bearing component side to clean wafer to be cleaned, and nozzle can on the surface of wafer to be cleaned on-fixed jet cleaner.When using wafer cleaning device cleaning wafer provided by the utility model, the product yield of wafer is improved.
Description
Technical field
The utility model relates to technical field of manufacturing semiconductors, in particular to a kind of wafer cleaning device.
Background technique
In semiconductor fabrication process, it usually needs cleaned to crystal column surface, to remove the impurity on crystal column surface
(such as organic matter or particulate matter).
In the related technology, the method for cleaning wafer specifically includes: offer one includes the crystalline substance of hold assembly and load bearing component
Circle chuck, the hold assembly are arranged above the load bearing component, clamp wafer to be cleaned using hold assembly, make it is described to
Cleaning wafer is separated by a distance with load bearing component, then passes through a nozzle to the wafer to be cleaned far from the load bearing component one
The fixed jet cleaner in the surface of side, to clean the crystal column surface to be cleaned.
But in the related technology, when cleaning the wafer to be cleaned, the wafer to be cleaned can be made relative to described
Deformation occurs for load bearing component, and the wafer to be cleaned is caused to touch with the load bearing component, so that on the load bearing component
Grain object is adhered to the wafer to be cleaned on the surface of the load bearing component side, to influence the wafer to be cleaned
Performance, and finally influence the product yield of wafer.
Utility model content
The purpose of this utility model is to provide a kind of wafer cleaning devices, to improve product wafer yield.
The utility model provides a kind of wafer cleaning device, and described device includes:
One wafer chuck, including hold assembly and load bearing component, the hold assembly are set on the load bearing component, institute
Hold assembly is stated for clamping wafer to be cleaned, and described in the wafer to be cleaned after clamping and the load bearing component face
There are a pre-determined distances for the part of wafer to be cleaned；
The nozzle being oppositely arranged with the wafer chuck is used for when the hold assembly clamps the wafer to be cleaned,
Surface jet cleaner to the wafer to be cleaned far from the load bearing component side to clean the wafer to be cleaned, wherein
When the nozzle is to the crystal column surface jet cleaner to be cleaned, the nozzle is non-on the surface of the wafer to be cleaned
Fixed jet cleaner.
Optionally, the wafer to be cleaned have opposite first edge and second edge, when the nozzle to it is described to
Cleaning wafer far from the load bearing component side surface jet cleaner when, the nozzle is in the first edge and described
The cleaning agent is back and forth sprayed between two edges.
Optionally, the part of wafer to be cleaned described in the load bearing component face is a flat surface.
Optionally, be provided with a plurality of gas passage in the load bearing component, a plurality of gas passage be used for it is described to
Surface transport protective gas of the cleaning wafer close to the load bearing component side.
Optionally, when the surface jet cleaning using a nozzle to the wafer to be cleaned far from the load bearing component side
When agent, wafer card disc spins, and drive the wafer to be cleaned rotation, wherein the revolving speed of the wafer chuck between
Between 1100~1450 revs/min.
By above-mentioned discussion it is found that the wafer cleaning device in the utility model, nozzle are activity settings, and when benefit
When with the nozzle jet cleaner, nozzle on-fixed injection, that is, using nozzle jet cleaner cleaning to
When cleaning wafer, the cleaning agent is not allowed to continuingly act on certain a part of wafer to be cleaned, but by the cleaning agent
Active force is dispersed in the other parts of the wafer to be cleaned, and further, the temperature of cleaning agent is lower in the utility model, delays
The revolving speed of the thermal expansion and cold contraction effect and the wafer chuck that have solved wafer is lower, reduces centrifugal force, to reduce described
The deformation degree of wafer to be cleaned.Meanwhile the wafer cleaning device in the utility model, the wafer to be cleaned and the carrying
The distance between component is larger.
It is lower and described to clear based on the wafer deformation degree to be cleaned then when cleaning the wafer to be cleaned
Wash wafer and the load bearing component it is apart from each other on the basis of, it is ensured that the wafer to be cleaned will not be touched to the carrying
Component, i.e., the particulate matter on the described load bearing component does not adhere to the crystal column surface to be cleaned, to substantially increase wafer
Product yield.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of wafer cleaning device in the related technology；
Fig. 2 is the structural schematic diagram of the wafer cleaning device when cleaning wafer to be cleaned in the related technology；
Fig. 3 is a kind of structural schematic diagram for wafer cleaning device that an embodiment of the present invention provides；
Fig. 4 an embodiment of the present invention provides the structural schematic diagram of the wafer cleaning device when cleaning wafer to be cleaned；
Fig. 5 is a kind of flow diagram of method for cleaning wafer of an embodiment of the present invention.
Specific embodiment
It holds as described in the background art, generally cleans wafer to be cleaned using wafer cleaning device in the related technology.Wherein,
Fig. 1 is the structural schematic diagram of wafer cleaning device in the related technology, as shown in Figure 1, the wafer cleaning device includes wafer card
Disk 100 and the nozzle (not shown) of a fixed setting.The wafer chuck 100 includes hold assembly 101 and carrying
Component 102, the hold assembly 101 is arranged on the load bearing component 102, for clamping wafer 200 to be cleaned, the carrying
The part of 102 face of component wafer 200 to be cleaned is arranged in concave surface, and the wafer 200 to be cleaned after clamping is held with described
It carries between component at a distance.The nozzle is oppositely arranged with the wafer chuck 100, is used for the wafer to be cleaned
Certain of 200 surfaces far from 102 side of load bearing component a part of (such as central part) injection HIGH TEMPERATURE PURGE agent (such as institute
The temperature for stating cleaning agent can be for 80 degrees Celsius), the crystal column surface to be cleaned is cleaned with this, wherein cleaning it is described to
When cleaning wafer, the wafer chuck also high speed rotation (such as the revolving speed of the wafer chuck can be 1700 revs/min), and
The wafer high speed rotation to be cleaned is driven, to guarantee uniformly to clean the wafer to be cleaned.
In the related art, since the nozzle is fixedly installed, then when cleaning the crystal column surface to be cleaned, the spray
Mouth can continue the central part jet cleaner to the wafer to be cleaned, and the cleaning agent can be into the wafer to be cleaned
Center portion point, which is continuously applied a vertical and the HIGH TEMPERATURE PURGE agent, can also make the wafer expansion to be cleaned, while high
The central part for the wafer to be cleaned that the wafer chuck of speed rotation can be such that it clamps is bent downwardly, and leads to the wafer to be cleaned
200 central parts sink, and deformation occurs for the wafer to be cleaned.Also, due to the wafer 200 to be cleaned and the supporting part
The distance between part is smaller (such as generally 0.5 millimeter), when the crystal circle center part to be cleaned sinks, easily touches
The load bearing component 102 (such as shown in Fig. 2), so that the particulate matter on the load bearing component 102 can be made more to adhere to
On the wafer to be cleaned, the product yield of wafer is influenced.
For this purpose, the utility model proposes a kind of wafer cleaning device, to avoid when cleaning the wafer to be cleaned, by
In the wafer to be cleaned touch the load bearing component and cause wafer product yield reduce the case where generation.
Below in conjunction with the drawings and specific embodiments to the utility model proposes wafer cleaning device make further specifically
It is bright.According to following description, will be become apparent from feature the advantages of the utility model.It should be noted that attached drawing be all made of it is very simple
The form of change and use non-accurate ratio, only to it is convenient, lucidly aid in illustrating the purpose of the utility model embodiment.
Fig. 3 is the structural schematic diagram for the wafer cleaning device that an embodiment of the present invention provides, as shown in figure 3, described
Wafer cleaning device may include wafer chuck 10 and nozzle 20.
Wherein, the wafer chuck 10 includes hold assembly 11 and load bearing component 12.The hold assembly 11 is set to institute
It states on load bearing component 12, for clamping wafer 30 to be cleaned, the part of wafer 30 to be cleaned described in 12 face of load bearing component
The wafer 30 to be cleaned for a flat surface, and after clamping and wafer to be cleaned described in 12 face of load bearing component
There are a pre-determined distance, the pre-determined distances to be typically in the range of between 1~3 millimeter for 30 part, greater than carrying in the related technology
The distance between component and wafer to be cleaned.Then in the present embodiment, due to the wafer to be cleaned and the load bearing component it
Between distance it is larger, it is described to be cleaned even if occur sinking such as the central part of the wafer to be cleaned in the related technology
Wafer will not touch the load bearing component easily, so that the particulate matter on the load bearing component is less adhered to institute
It states on wafer to be cleaned, ensure that the product yield of wafer.
Further, the nozzle 20 is movably set in the top of the load bearing component 12, can be used for described to clear
Surface on-fixed jet cleaner of the wafer 30 far from 12 side of load bearing component is washed to clean the wafer to be cleaned 30.
Specifically, in the present embodiment, the wafer to be cleaned has opposite first edge A and second edge B, work as institute
State nozzle 20 to the wafer 30 to be cleaned far from 12 side of load bearing component surface jet cleaner when, the nozzle 20
Can between the first edge A and the second edge B reciprocal jet cleaner, that is, the nozzle is shown in Fig. 3
It moves reciprocatingly on the D of direction.It is sprayed compared to nozzle described in the relevant technologies to the central part of the wafer to be cleaned is fixed
For cleaning agent, the active force for the cleaning agent that the nozzle ejects is distributed to the crystal column surface to be cleaned by the utility model
Other parts, sink this case so as to avoid the central part of the wafer to be cleaned in the related technology, drop
The low deformation degree of the wafer to be cleaned.
Wherein, the cleaning agent that the nozzle 20 is sprayed can be low-temperature cleaning agent, medium temperature cleaning agent or HIGH TEMPERATURE PURGE
Agent, the temperature range of the low-temperature cleaning agent between section [20,45), the temperature range of the medium temperature cleaning agent is between section
[45,80), the temperature range of the HIGH TEMPERATURE PURGE agent between section [80, ∞).It is described clear also, due to thermal expansion and contraction principle
The temperature of lotion is higher, and the dilation of the wafer to be cleaned is bigger namely the deformation degree of the wafer to be cleaned is bigger, and
And under the action of the cleaning agent of nozzle injection, shape occurs for the direction that the wafer to be cleaned is towards the load bearing component
Become.It that is to say, when the temperature of the cleaning agent is higher, the wafer to be cleaned is easier to touch the load bearing component,
The granule number that the i.e. described wafer to be cleaned is adhered to from the load bearing component is increased also more.Wherein, the wafer to be cleaned from
Relationship can be as shown in table 1 between the increased quantity of particulate matter and the temperature of the cleaning agent of the load bearing component adherency.
Table 1
As shown in Table 1, the wafer to be cleaned is adhered to from the load bearing component the increased quantity of particulate matter and described clear
The temperature of lotion is positively correlated.Wherein, when the temperature of the cleaning agent is low temperature, the wafer to be cleaned is from the supporting part
The particulate matter that part sticks together accelerate it is less, such as 11.When the temperature of the cleaning agent is medium temperature, the wafer to be cleaned
The particulate matter sticked together from the load bearing component accelerate it is more, such as 195.When the temperature of the cleaning agent is high temperature,
The wafer to be cleaned is accelerated more from the particulate matter that the load bearing component sticks together, such as 421.
And in the present embodiment, in order to reduce the deformation journey of the wafer to be cleaned when cleaning the wafer to be cleaned
Degree, so that the wafer to be cleaned adheres to small number of particulate matter from the load bearing component, to protect the product of wafer good
Rate, the temperature of the cleaning agent are typically in the range of between 20~70 degrees Celsius.
Further, it should be noted that when nozzle 20 is to 20 jet cleaner of wafer to be cleaned, the wafer
Chuck 10 can also rotate, and will drive the wafer rotation to be cleaned, so that the cleaning agent on the wafer to be cleaned is uniform
Distribution improves the cleaning uniformity of the wafer to be cleaned.Wherein, when the wafer to be cleaned rotates, centrifugal force can make institute
The central part for stating wafer to be cleaned sinks, and making the wafer to be cleaned, deformation occurs.Also, when the wafer card disk rotating speed is got over
When big, the revolving speed of the wafer to be cleaned is bigger, then the deformation degree of the wafer to be cleaned is bigger, the wafer to be cleaned
It is easier to touch to the load bearing component, so that the particle that the wafer to be cleaned is adhered to from the load bearing component increases number
It measures also more.Wherein, the particulate matter that the revolving speed of the wafer chuck and the wafer to be cleaned are adhered to from the load bearing component
Increased number of relationship is as shown in table 2.
Table 2
As shown in Table 2, the particle that the revolving speed of the wafer chuck and the wafer to be cleaned are adhered to from the load bearing component
Object, which is accelerated, to be positively correlated, when the wafer card disk rotating speed between section [1100,1350) when (for example, 1200 rpms
(r/min)) when, the accelerating for particulate matter that the wafer to be cleaned is adhered to from the load bearing component is 14.When the crystalline substance
Circle chuck revolving speed between section [1350,1600) when (for example, 1500r/min) when, the wafer to be cleaned is from the supporting part
The accelerating for particulate matter of part adherency is 290.When the wafer card disk rotating speed between section [1600,1800) when (such as
When for 1700r/min), the accelerating for particulate matter that the wafer to be cleaned is adhered to from the load bearing component is 489.
And in the present embodiment, in order to reduce the deformation journey of the wafer to be cleaned when cleaning the wafer to be cleaned
Degree, so that the wafer to be cleaned adheres to small number of particulate matter from the load bearing component, to protect the product of wafer good
The revolving speed of rate, the wafer chuck 10 is typically in the range of between 1100~1450 revs/min.
In summary, in the present embodiment, when cleaning the wafer to be cleaned, as described in nozzle on-fixed injection
The temperature of crystal column surface to be cleaned and the cleaning agent is lower, and the revolving speed of the wafer chuck is smaller, then makes described to clear
It washes wafer and lesser degree of deformation occurs.Simultaneously as the wafer to be cleaned and the distance between the load bearing component are larger.
On this basis, when cleaning the wafer to be cleaned using nozzle jet cleaner, the wafer to be cleaned will not be touched to institute
Load bearing component is stated, is adhered to the crystal column surface to be cleaned so as to avoid the particulate matter on the load bearing component.Wherein, Fig. 4
It shows in the present embodiment when cleaning the wafer to be cleaned, the structural schematic diagram of the wafer cleaning device.2 He of comparison diagram
It is found that in the utility model when cleaning the wafer to be cleaned, the wafer to be cleaned does not touch to the supporting part Fig. 4
Part.
Further, as shown in figure 3, being additionally provided with a plurality of gas passage C in the load bearing component, a plurality of gas is logical
Road C is used for the wafer 20 to be cleaned close to the surface transport protective gas of 12 side of load bearing component, so that the guarantor
Shield gas, which is filled between the wafer to be cleaned 20 and the load bearing component 12, forms biggish pressure, to avoid described clear
Lotion flow to the wafer to be cleaned 20 close to the surface of 12 side of load bearing component, to protect the wafer to be cleaned close
The surface of the load bearing component side.Wherein, the protective gas can be inert gas or nitrogen.
By above-mentioned discussion it is found that the wafer cleaning device in the utility model, nozzle are activity settings, and when benefit
When with the nozzle jet cleaner, nozzle on-fixed injection, that is, using nozzle jet cleaner cleaning to
When cleaning wafer, the cleaning agent is not allowed to continuingly act on certain a part of wafer to be cleaned, but by the cleaning agent
Active force is dispersed in the other parts of the wafer to be cleaned, and further, the temperature compared to cleaning agent in the related technology is
For 80 degrees Celsius, the temperature of cleaning agent is lower in the utility model, is typically in the range of between 20~70 degrees Celsius, alleviates wafer
Thermal expansion and cold contraction effect, and comparison in the related technology wafer chuck revolving speed be 1700 revs/min, described in the utility model
The revolving speed of wafer chuck is lower, is typically in the range of between 1100~1450 revs/min, correspondingly, the centrifugal force of wafer chuck also compared with
It is low, to reduce the deformation degree of the wafer to be cleaned.Meanwhile the wafer cleaning device in the utility model, it is described to
The distance between cleaning wafer and the load bearing component are larger.
It is lower and described to be cleaned based on the wafer deformation degree to be cleaned when then cleaning the wafer to be cleaned
On the basis of wafer and the load bearing component are apart from each other, it is ensured that the wafer to be cleaned will not be touched to the supporting part
Particulate matter on part namely the load bearing component does not adhere to the crystal column surface to be cleaned, to substantially increase wafer
Product yield.
Further, the utility model additionally provides a kind of method for cleaning wafer, and Fig. 5 is an embodiment of the present invention
A kind of flow diagram of method for cleaning wafer, as shown in figure 5, the method for cleaning wafer may include:
Step 10a, a wafer chuck including hold assembly and load bearing component is provided, is clamped using hold assembly to be cleaned
Wafer.
Wherein, the hold assembly is arranged on the load bearing component, for clamping the wafer to be cleaned and described
The part of wafer to be cleaned described in load bearing component face is a flat surface.And the wafer to be cleaned and institute after clamping
The part of wafer to be cleaned described in load bearing component face is stated there are a pre-determined distance, the pre-determined distance is typically in the range of 1~3 millimeter
Between.
Step 20a, it is sprayed to the wafer to be cleaned far from the surface on-fixed of the load bearing component side using a nozzle
Cleaning agent is penetrated, to clean the wafer to be cleaned.
Wherein, the nozzle is oppositely arranged with the wafer chuck, also, the wafer to be cleaned includes opposite first
Edge and second edge, when using the nozzle to the wafer jet cleaner to be cleaned, the nozzle is described first
Reciprocal jet cleaner between edge and the second edge, wherein the temperature for the cleaning agent that the nozzle ejects is between 20
Between~70 degrees Celsius.
It should be noted that in the present embodiment, wafer to be cleaned is cleaned by then passing through nozzle jet cleaner,
Therefore, when clamping the wafer to be cleaned using hold assembly, the face institute in face to be cleaned of the wafer to be cleaned should be made
Nozzle is stated, meanwhile, the no clean face of the wafer to be cleaned faces the load bearing component.Also, it is also set in the load bearing component
Be equipped with it is a plurality of for conveying the gas passage of protective gas so that the protective gas be filled in the load bearing component and it is described to
It between cleaning wafer, please be wash one's face with ensuring that the cleaning agent does not flow to the non-of the wafer to be cleaned, protect the crystalline substance to be cleaned
It is round non-to wash one's face.
It should be noted that when the face to be cleaned of the wafer to be cleaned is the back side, cleaning that the nozzle ejects
Agent can also clean the fringe region of the wafer frontside to be cleaned, and the gas delivery channels are used for the wafer to be cleaned
Positive non-edge conveys stabilizing gas, to protect the non-edge of the wafer frontside to be cleaned.
Further, in the present embodiment, it in order to guarantee the uniformity for the wafer cleaning to be cleaned, is sprayed in nozzle
When penetrating cleaning agent, the wafer chuck is also rotated, to drive the wafer rotation to be cleaned, so that being ejected into described to be cleaned
The cleaning agent in wafer face to be cleaned is uniformly distributed, to realize the uniform cleaning to the wafer to be cleaned.Wherein, the wafer card
The revolving speed of disk is typically in the range of between 1100~1450 rev/min.
By above-mentioned discussion it is found that in the method for cleaning wafer in the utility model, when the utilization nozzle jet cleaner
When, nozzle on-fixed injection not allows institute that is, when cleaning wafer to be cleaned using the nozzle jet cleaner
Certain a part that cleaning agent continuingly acts on wafer to be cleaned is stated, but the active force of the cleaning agent is dispersed in described to clear
The other parts of wafer are washed, meanwhile, the temperature of cleaning agent is lower in the utility model, alleviates thermal expansion and cold contraction effect, Yi Jisuo
The revolving speed for stating wafer chuck is lower, reduces centrifugal force, to reduce the deformation degree of the wafer to be cleaned.Also, institute
It is larger to state the distance between wafer to be cleaned and the load bearing component.
It is lower and described to clear based on the wafer deformation degree to be cleaned then when cleaning the wafer to be cleaned
Wash wafer and the load bearing component it is apart from each other on the basis of, it is ensured that the wafer to be cleaned will not be touched to the carrying
Particulate matter on component namely the load bearing component does not adhere to the crystal column surface to be cleaned, to substantially increase crystalline substance
Round product yield.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with other
The difference of embodiment, the same or similar parts in each embodiment may refer to each other.For method disclosed in embodiment
For, as corresponding with device disclosed in embodiment, so being described relatively simple, related place is referring to device part explanation
?.
Foregoing description is only the description to the utility model preferred embodiment, not to any limit of the scope of the utility model
Fixed, any change, the modification that the those of ordinary skill in the utility model field does according to the disclosure above content belong to right and want
Seek the protection scope of book.
Claims (5)
1. a kind of wafer cleaning device, which is characterized in that described device includes:
One wafer chuck, including hold assembly and load bearing component, the hold assembly are set on the load bearing component, the folder
Component is held for clamping wafer to be cleaned, and the wafer to be cleaned after clamping with described in the load bearing component face to clear
Washing the part of wafer, there are a pre-determined distances；
The nozzle being oppositely arranged with the wafer chuck is used for when the hold assembly clamps the wafer to be cleaned, to institute
Surface jet cleaner of the wafer to be cleaned far from the load bearing component side is stated to clean the wafer to be cleaned, wherein working as institute
When stating nozzle to the crystal column surface jet cleaner to be cleaned, nozzle on-fixed on the surface of the wafer to be cleaned
Jet cleaner.
2. wafer cleaning device as described in claim 1, which is characterized in that the wafer to be cleaned has the first opposite side
Edge and second edge, when surface jet cleaner of the nozzle to the wafer to be cleaned far from the load bearing component side
When, the nozzle back and forth sprays the cleaning agent between the first edge and the second edge.
3. wafer cleaning device as described in claim 1, which is characterized in that wafer to be cleaned described in the load bearing component face
Part be a flat surface.
4. wafer cleaning device as described in claim 1, which is characterized in that it is logical to be provided with a plurality of gas in the load bearing component
Road, a plurality of gas passage are used to protect gas to the surface transport of the close load bearing component side of wafer to be cleaned
Body.
5. wafer cleaning device as described in claim 1, which is characterized in that when remote to the wafer to be cleaned using a nozzle
When surface jet cleaner from the load bearing component side, the wafer card disc spins, and drive the wafer rotation to be cleaned
Turn, wherein the revolving speed of the wafer chuck is between 1100~1450 revs/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822002990.9U CN209045502U (en) | 2018-11-30 | 2018-11-30 | Wafer cleaning device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822002990.9U CN209045502U (en) | 2018-11-30 | 2018-11-30 | Wafer cleaning device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209045502U true CN209045502U (en) | 2019-06-28 |
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ID=67043909
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| Application Number | Title | Priority Date | Filing Date |
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| CN201822002990.9U Active CN209045502U (en) | 2018-11-30 | 2018-11-30 | Wafer cleaning device |
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| CN (1) | CN209045502U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113877890A (en) * | 2021-09-26 | 2022-01-04 | 北京北方华创微电子装备有限公司 | Semiconductor cleaning apparatus and method of cleaning chuck |
-
2018
- 2018-11-30 CN CN201822002990.9U patent/CN209045502U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113877890A (en) * | 2021-09-26 | 2022-01-04 | 北京北方华创微电子装备有限公司 | Semiconductor cleaning apparatus and method of cleaning chuck |
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