CN208738241U - Area source and the display device for using the area source - Google Patents
Area source and the display device for using the area source Download PDFInfo
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- CN208738241U CN208738241U CN201821586261.6U CN201821586261U CN208738241U CN 208738241 U CN208738241 U CN 208738241U CN 201821586261 U CN201821586261 U CN 201821586261U CN 208738241 U CN208738241 U CN 208738241U
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- area source
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Abstract
The utility model discloses a kind of area source and using the display device of the area source, the area source includes a substrate；One conductor layer has several conducting wires, is distributed in a surface of the substrate；One specular layer is overlying on the conductor layer；One high temperature resistant film layer, is overlying on the specular layer；Several LED chips are distributed in the high temperature resistant film layer and corresponding are electrically connected to the conducting wire；One fluorescent film is overlying in the LED chip and the high temperature resistant film layer.The area source of the utility model and the display device for using the area source effectively increase the reflectivity and whole light efficiency of area source.
Description
Technical field
The utility model relates to the fields such as flexible display apparatus, and in particular to a kind of area source and showing using the area source
Showing device.
Background technique
With the continuous development of science and technology, contact of the people with electronic equipment is more and more frequent, to display device (or display
Screen) requirement also constantly get higher.MiniLED display device is as future market OLED display (organic electroluminescent two
Pole pipe display device) strong competing product, MiniLED display device have it is highlighted, flexible, high dynamic can be made
Many advantages, such as contrast display technology, narrow frame display technology, special-shaped display technology, it has also become market survey hot spot.
However, at present miniLED display device in terms of light extraction efficiency, even light mixing, cost, mould group with it is normal
It advises product backlight and OLED display compares also some gaps.For light efficiency, miniLED display device uses flexible electrical
Road plate (Flexible Printed Circuit abbreviation FPC) or printed circuit board (Printed Circuit Board, abbreviation
PCB) as the direct-type backlight framework of substrate, there is the substrate surface of area source using the higher white oil of reflectivity in backlight framework
The inside light echo of miniLED display device is reflected into diffusion layer and blast film layer by film layer.And on the market, due to existing white
Oily ink reflectance is more difficult more than 85%, meanwhile, the organic material of ink type absorption value with higher causes in area source
Portion's light echo light efficiency loss it is more, ink reflectance promotion come reach promoted area source light efficiency by way of can generate a technology
Bottleneck.
Utility model content
Technical problem to be solved by the utility model is to provide a kind of area source and using the display dress of the area source
It sets, white oil reflecting layer on the market is substituted at present using the specular layer for being covered with high temperature resistant film layer, to effectively improve area source
Reflectivity and whole light efficiency.
In order to solve the above-mentioned technical problem, the utility model provides a kind of area source, including a substrate；One conductor layer, tool
There are several conducting wires, is distributed in a surface of the substrate；One specular layer is overlying on the conductor layer；One high temperature resistance diaphragm
Layer, is overlying on the specular layer；Several LED chips are distributed in the high temperature resistant film layer and corresponding are electrically connected to institute
State conducting wire；One fluorescent film is overlying in several LED chips and the high temperature resistant film layer.
In an embodiment of the utility model, the heat resisting temperature of the high temperature resistant film layer is 200 DEG C -500 DEG C, penetrance
Higher than 90%, with a thickness of 100 μm -150 μm.
In one preferred embodiment of the utility model, the penetrance of the high temperature resistant film layer is higher than 90%.
In an embodiment of the utility model, the high temperature resistant film layer with a thickness of 100 μm -150 μm.
In an embodiment of the utility model, the high temperature resistant film layer material therefor is Copolycarbonate, polyarylether
One of ketone derivatives, polyimides sulfone derivative, polyimides analog derivative, fragrant polyheterocycles derivative.
In an embodiment of the utility model, the specular layer with a thickness of 1 μm -5 μm.
In an embodiment of the utility model, the surface roughness of the specular layer is 0.1 μm -0.3 μm.
In an embodiment of the utility model, the length and width dimensions range of the LED chip is 100 μm -500 μm.
In an embodiment of the utility model, which is also etched with several through-holes, and each through-hole is through entire
The high temperature resistant film layer and the specular layer；There is the pad connecting with the conducting wire, the through-hole on the conductor layer
Position correspond to the pad, each LED chip have corresponding pin, the pin pass through the through-hole be fixed to
The pad.
The utility model additionally provides a kind of display device comprising the area source.
The beneficial effects of the utility model are: the area source of the utility model and the display device using the area source,
Using be covered with high temperature resistant film layer specular layer substitute at present white oil reflecting layer, the mirror surface for being covered with high temperature resistant film layer are anti-on the market
It penetrates a layer reflectivity and reaches 90% or more, higher than the reflectivity 85% in best white oil reflecting layer on the market at present, be covered with high temperature resistant
The specular layer of film layer, reflecting spectrum is higher in the reflectivity of blue wave band, the light extraction efficiency and excitation energy of blue light
It is higher, the more efficient reflectivity for improving area source and whole light efficiency.
Detailed description of the invention
The utility model is further explained with reference to the accompanying drawings and examples.
Fig. 1 is the area source layer structure figure of an embodiment of the present invention.
Fig. 2 is a kind of conductor pattern of conductor layer in Fig. 1, the distribution of major embodiment conducting wire and the position of pad.
Fig. 3 is the specular layer that high temperature resistant film layer is covered in the utility model embodiment and the reflectivity in white oil reflecting layer
Contrast curve chart.
Fig. 4 is the step flow chart of the preparation method of the area source of an embodiment of the present invention.
Fig. 5 is the layer structure figure of the display device of an embodiment of the present invention.
Appended drawing reference:
1 back lighting device；
100 area sources；110 optical diaphragms；
101 flexible base boards；102 conductor layers；
103 specular layers；104 high temperature resistant film layers；
105LED chip；106 fluorescent films；
107 through-holes；1020 conducting wires；
1021 pads；10201P polar conductor；
10202N polar conductor；
2 first polaroids；3 first glass substrates；
4 first electrode layers；5 layer of liquid crystal molecule；
6 the second electrode lays；7 colored filters；
8 second glass substrates；9 second polaroids.
Specific embodiment
The explanation of following embodiment is to can be used to the specific reality of implementation to illustrate the utility model with reference to additional schema
Apply example.The direction term that the utility model is previously mentioned, such as "upper", "lower", "front", "rear", "left", "right", "top", "bottom"
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the utility model, rather than
To limit the utility model.
As shown in Figure 1, in one embodiment, area source 100 of the invention includes a substrate 101, a conductor layer
102, a specular layer 103, a high temperature resistant film layer 104, several LED chips 105, a fluorescent film 106.
The substrate 101 can be FPC substrate or PCB substrate.In the present embodiment, the substrate 101 is FPC flexibility base
Plate.
The conductor layer 102 has several conducting wires 1020 (see Fig. 2).The conducting wire 1020 is distributed in the substrate 101
Upper surface to forming the conductor layer 102, copper wires can be used in the conducting wire 1020.Copper wires are attached to described soft
Property substrate 101 upper surface formed area source 100 basic framework.
As shown in Fig. 2, since each LED chip 105 has corresponding pin, this draws according to production engineering specifications
Foot is divided into the pole P and the pole N, and therefore, the conducting wire 1020 is also classified into P polar conductor 10201 and N polar conductor 10202, N polar conductor 10202
With corresponding pad 1021 is set on P polar conductor 10202.
The specular layer 103 is overlying on the conductor layer 102；In the present embodiment, the specular layer 103 is covered
On the basic framework of the area source 100, that is, cover the entire surface where the copper wires.The specular layer 103
With a thickness of 1 μm -5 μm, preferably 3 μm；The surface roughness of the specular layer 103 is 0.1 μm -0.3 μm, and be averaged table
Surface roughness is generally 0.2 μm.The surface roughness of the specular layer 103 can increase the unrestrained of light to a certain extent
Reflection, keeps light evenly dispersed.
The high temperature resistant film layer 104 is overlying on the specular layer 103；It is added above the specular layer 103
The heat-insulated high temperature resistant film layer 104, when guaranteeing subsequent hot pressing fluorescent film 106, the specular layer 103 is not destroyed.Root
According to design performance demand, 104 material therefor of high temperature resistant film layer is Copolycarbonate, poly(aryl ether ketone) derivative, polyamides
One of imines sulfone derivative, polyimides analog derivative, fragrant polyheterocycles derivative.Wherein, the high temperature resistant film layer
104 heat resisting temperature is 200 DEG C -500 DEG C, and penetrance is higher than 90%, with a thickness of 100 μm -150 μm, preferably 120 μm -
130μm。
As shown in figure 3, Fig. 3 is the anti-of the specular layer for being covered with high temperature resistant film layer and the white oil reflecting layer in the present embodiment
Penetrate rate contrast curve chart, from frequency spectrum it can be seen that 103 reflectivity of specular layer for being covered with high temperature resistant film layer 104 reach 90% with
On, higher than the reflectivity 85% in best white oil reflecting layer on the market at present, it is covered with the specular layer of high temperature resistant film layer 104
103, reflecting spectrum is higher in the reflectivity of blue wave band, and the light extraction efficiency and excitation energy of blue light are also higher, is more advantageous to
Promote light efficiency.
As shown in Figure 1, the LED chip 105 be distributed in the high temperature resistant film layer 104 and it is corresponding be electrically connected to it is described
Conducting wire 1020 (label is shown in Fig. 2)；The 105 length and width dimensions range of LED chip is 100 μm -500 μm.
In specific die bond, which is also etched with several through-holes 107, and each through-hole 107 runs through entire institute
High temperature resistant film layer 104 and the specular layer 103 are stated, the position of the through-hole 107 corresponds to the pad 1021.The pin
The pad 1021 is fixed to across the through-hole 107.
The fluorescent film 106 is overlying in several LED chips 105 and the high temperature resistant film layer 104.
As shown in figure 4, the present invention also provides a kind of faces in order to completely realize above-described embodiment area source 100
The preparation method of light source 100 specifically includes step S01-S08.
The element being related to or structure symbol is described below referring to Fig. 1 and Fig. 2.
S01: a substrate 101 is provided；The substrate 101 is FPC substrate or PCB substrate.
S02: adhere to several conducting wires 1020 in the upper surface of the substrate 101, form a conductor layer 102；The conducting wire
1020 can be used copper wires, and the upper surface that the copper wires are attached to the substrate 101 forms the basic frame of area source 100
Structure.
S03: there is the one side of the conducting wire 1020 in the substrate 101, sputter forms a specular layer 103；It is described
Specular layer 103 covers the entire surface on the basic framework of area source 100 where copper wires.The specular layer 103
With a thickness of 1 μm -5 μm, preferably 3 μm；The surface roughness of the specular layer 103 is 0.1 μm -0.3 μm, and be averaged table
Surface roughness is generally 0.2 μm.
S04: unification high temperature resistant film layer 104 is glued in the specular layer 103；Wherein, the high temperature resistant film layer 104
Heat resisting temperature is 200 DEG C -500 DEG C, and penetrance is higher than 90%, 100 μm -150 μm of thickness, preferably 120 μm -130 μm.Institute
It states high temperature resistant film layer 104 and the specular layer 103 to bond by glue-line, guarantees the high temperature resistant film layer 104 and the mirror
Face reflecting layer 103 can fit closely.
S05: etching several through-holes 107 through entire the high temperature resistant film layer 104 and the specular layer 103,
Due to having the pad 1021 connecting with the conducting wire 1020, in a practical situation, each LED on the conductor layer 102
Chip 105 all has corresponding pin, which is divided into the pole P and the pole N, and conducting wire 1020 is also classified into P polar conductor and N polar conductor,
Corresponding pad 1021 is set on N polar conductor and P polar conductor, and the position of the through-hole 107 corresponds to the pad 1021, institute
After the completion of stating the etching of through-hole 107, the pad 1021 of the substrate can be exposed, with sharp subsequent job.
S06: being arranged several LED chips 105 in the high temperature resistant film layer 104, and each LED chip 105 is corresponding
The corresponding conducting wire being electrically connected in the conductor layer 102.Specifically, the pin of the LED chip 105 is across corresponding
The through-hole 107 is simultaneously fixed on the pad 1021 by brush tin cream technique, die bond technique and reflow soldering process.Brush tin cream work
In skill, tin cream is coated in 1021 position of pad, passes through die bond technique and the fixed LED chip 105 of reflow soldering process later.It is described
Reflow soldering process is laser reflow Welding.In the present embodiment, every LED chip 105 is carried out using laser reflow Welding
Welding is different from conventional hot gas re-flow Welding, when conventional hot gas re-flow Welding welds, occupied bonding area
Greatly, when using the welding of laser reflow Welding, laser beam can be gathered in 1021 region of pad by optical system,
1021 region of pad is set to form local heating area in short period, when so as to avoid being welded with conventional hot gas re-flow Welding
The influence of bring substrate or each film layer harmomegathus.
S07: one fluorescent film 106 of hot pressing, hot pressing temperature are as follows: 130 in the high temperature resistant film layer 104 and LED chip 105
℃-150℃；Hot pressing time is 10min-15min (i.e. 10 to 15 minutes).Wherein, hot pressing temperature is 130 DEG C -150 DEG C, described
The heat resisting temperature of high temperature resistant film layer 104 is 200 DEG C -500 DEG C, and hot pressing temperature is far below the heat resisting temperature of high temperature resistant film layer 104, can
It is not influenced by hot pressing temperature so that the specular layer 103 is effectively protected.In the high temperature resistant film layer 104 and LED chip 105
After upper one fluorescent film 106 of hot pressing, the semi-finished product of area source 100 are obtained.
S08: being put into oven for the semi-finished product of area source 100,130 DEG C -150 DEG C at a temperature of toast 2min-10min,
Make the further solidification of fluorescent film 106, obtains the finished product of area source 100.
The construction of the display device of that present invention will be introduced by taking miniLED display device as an example below.
As shown in figure 5, in one embodiment, miniLED display device of the present invention includes that back lighting device 1, first is inclined
Mating plate 2, the first glass substrate 3, first electrode layer 4, layer of liquid crystal molecule 5, the second electrode lay 6, colored filter 7, the second glass
Substrate 8 and the second polaroid 9.Wherein, the first polaroid 2 and the second polaroid 9 are oppositely arranged, and are located at the back lighting device 1
On, the first glass substrate 3, the second glass substrate 8 are oppositely arranged, between the first polaroid 2 and the second polaroid 9, first
Electrode layer 4 and the second electrode lay 6 are set between the first glass substrate 3 and the second glass substrate 8, and layer of liquid crystal molecule 5 is set to first
Between electrode layer 4 and the second electrode lay 6, colored filter 7 is set between the second glass substrate 8 and the second electrode lay 6.The back
The light that electro-optical device 1 issues successively passes through the first polaroid 2, the first glass substrate 3, liquid crystal molecule 5, colored filter 7, the second glass
It is appeared after glass substrate 8 and the second polaroid 9.
The back lighting device 1 includes the area source 100 and at least one optical diaphragm 110 of the embodiment of the present invention.Wherein,
The optical diaphragm 110 is configured on the area source 100, is, for example, diffusion sheet, prismatic lens, brightening piece or combinations thereof.
Due to the area source 100 in the back lighting device 1 for focusing on miniLED display device of the invention, for
Other components of miniLED display device are not just repeating one by one.
Certainly, the embodiment of the present invention back lighting device 1 is also applied in other kinds of miniLED display device,
Cited miniLED liquid crystal display device is only to a kind of explanation of the invention, rather than to this in the present embodiment
A kind of limitation of invention.
The above is merely preferred embodiments of the present invention, be not intended to limit the invention, it is all in spirit of the invention and
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within principle.
Claims (10)
1. a kind of area source, which is characterized in that including
One substrate；
One conductor layer has several conducting wires, is distributed in a surface of the substrate；
One specular layer is overlying on the conductor layer；
One high temperature resistant film layer, is overlying on the specular layer；
Several LED chips are distributed in the high temperature resistant film layer and corresponding are electrically connected to the conducting wire；
One fluorescent film is overlying in the LED chip and the high temperature resistant film layer.
2. area source according to claim 1, which is characterized in that the penetrance of the high temperature resistant film layer is higher than 90%.
3. area source according to claim 1, which is characterized in that the heat resisting temperature of the high temperature resistant film layer be 200 DEG C-
500℃。
4. area source according to claim 1, which is characterized in that the high temperature resistant film layer with a thickness of 100 μm -150 μm.
5. area source according to claim 1, which is characterized in that the high temperature resistant film layer material therefor is total for polycarbonate
Polymers, poly(aryl ether ketone) derivative, polyimides sulfone derivative, polyimides analog derivative, in fragrant polyheterocycles derivative
It is a kind of.
6. area source according to claim 1, which is characterized in that the specular layer with a thickness of 1 μm -5 μm.
7. area source according to claim 1, which is characterized in that the surface roughness of the specular layer be 0.1 μm-
0.3μm。
8. area source according to claim 1, which is characterized in that the length and width dimensions range of the LED chip is 100 μ
m-500μm。
9. area source according to claim 1, which is characterized in that the area source is also etched with several through-holes, each described
Through-hole runs through the entire high temperature resistant film layer and the specular layer；There is the weldering connecting with the conducting wire on the conductor layer
Disk, the position of the through-hole correspond to the pad, and each LED chip has corresponding pin, and the pin passes through institute
It states through-hole and is fixed to the pad.
10. a kind of display device, which is characterized in that including the area source as described in any one of claim 1-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821586261.6U CN208738241U (en) | 2018-09-27 | 2018-09-27 | Area source and the display device for using the area source |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821586261.6U CN208738241U (en) | 2018-09-27 | 2018-09-27 | Area source and the display device for using the area source |
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| Publication Number | Publication Date |
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| CN208738241U true CN208738241U (en) | 2019-04-12 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109065529A (en) * | 2018-09-27 | 2018-12-21 | 武汉华星光电技术有限公司 | Area source, preparation method and the display device using the area source |
-
2018
- 2018-09-27 CN CN201821586261.6U patent/CN208738241U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109065529A (en) * | 2018-09-27 | 2018-12-21 | 武汉华星光电技术有限公司 | Area source, preparation method and the display device using the area source |
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