CN208623330U - A kind of esd protection circuit with reverse-connection preventing circuit - Google Patents
A kind of esd protection circuit with reverse-connection preventing circuit Download PDFInfo
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- CN208623330U CN208623330U CN201821204302.0U CN201821204302U CN208623330U CN 208623330 U CN208623330 U CN 208623330U CN 201821204302 U CN201821204302 U CN 201821204302U CN 208623330 U CN208623330 U CN 208623330U
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- esd protection
- pmos tube
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Abstract
The utility model provides a kind of esd protection circuit with reverse-connection preventing circuit, and the esd protection circuit with reverse-connection preventing circuit includes: esd protection circuit, is connected between power input and internal circuit, for carrying out ESD protection to internal circuit；And reverse-connection preventing circuit, it is connected between power input and esd protection circuit, for when power input accesses positive supply voltage, access to be presented in reverse-connection preventing circuit conducting between power input and internal circuit；When power input accesses reverse electrical source voltage, open circuit is presented, to carry out anti-reverse protection in reverse-connection preventing circuit shutdown between power input and internal circuit.It is solved in existing esd protection circuit by the utility model, when power input accesses reverse electrical source voltage, the parasitic diode conducting of described NMOS tube itself leads to that entire circuit system work is abnormal, the problem of even burning to generate high current.
Description
Technical field
The utility model relates to circuit design fields, more particularly to a kind of esd protection circuit with reverse-connection preventing circuit.
Background technique
Electro-static Driven Comb (Electrostatic Discharge, ESD) protection is very important for integrated circuit,
Many researchs have been carried out in IC design field.Either in the normal use of electronic equipment, transport and inventory,
Or it is likely to that Electro-static Driven Comb occurs during various integrated circuit components are assembled in production.These be difficult to correctly predict and
The Electro-static Driven Comb of prevention can damage integrated circuit, generate fraction defective, even result in serious loss.It is set in current integrated circuit
The design of esd protection circuit can all be paid special attention in meter and manufacture.
In existing chip design, esd protection circuit can be generally set between power input and internal circuit, to reality
The ESD protection of existing internal circuit.Existing esd protection circuit 10 is connected to power input, and (be positive power input, GND of VDD be
Negative supply input terminal) and internal circuit between, particular circuit configurations as shown in Figure 1, include a NMOS tube NM1 ', wherein it is described
NMOS tube NM1 ' itself has parasitic diode Ds '；When adding positive supply voltage between VDD and GND, internal circuit is normal
Work, NMOS tube NM1 ' is in an off state as the ESD protection pipe of internal circuit, carries out ESD protection to internal circuit；But work as
Between VDD and GND plus when reverse electrical source voltage, the parasitic diode Ds ' conducting of NMOS tube NM1 ' itself leads to have high current production
It is raw, so that it is abnormal to will lead to entire circuit system work, or even burn.
In consideration of it, it is necessary to design a kind of new esd protection circuit with reverse-connection preventing circuit, to solve above-mentioned technology
Problem.
Utility model content
In view of the foregoing deficiencies of prior art, the purpose of this utility model is to provide one kind to have reverse-connection preventing circuit
Esd protection circuit, for solving in existing esd protection circuit, when power input access reverse electrical source voltage when, it is described
The parasitic diode of NMOS tube itself is connected, to generate high current, leads to that entire circuit system work is abnormal, even burns
The problem of.
In order to achieve the above objects and other related objects, the utility model provides a kind of ESD guarantor with reverse-connection preventing circuit
Protection circuit, the esd protection circuit include:
Esd protection circuit is connected between power input and internal circuit, for carrying out ESD to the internal circuit
Protection；And
Reverse-connection preventing circuit is connected between the power input and the esd protection circuit, defeated for working as the power supply
When entering to terminate into positive supply voltage, the reverse-connection preventing circuit conducting is between the power input and the internal circuit
Existing access；When the power input accesses reverse electrical source voltage, reverse-connection preventing circuit shutdown, the power input with
Open circuit is presented between the internal circuit, to carry out anti-reverse protection.
Optionally, the reverse-connection preventing circuit includes:
One anti-reverse unit is connected between the power input and the esd protection circuit, for working as the power supply
When input terminal accesses positive supply voltage, the reverse-connection preventing circuit conducting, between the power input and the internal circuit
Access is presented；When the power input accesses reverse electrical source voltage, the reverse-connection preventing circuit shutdown, the power input
Open circuit is presented between the internal circuit；And
Substrate switch unit is connected to the anti-reverse unit, for the input from supply voltage and the internal circuit
Select high-potential voltage as the underlayer voltage of the anti-reverse unit in voltage.
Optionally, the anti-reverse unit includes: the first PMOS tube, and the source terminal of first PMOS tube accesses positive supply
Input terminal, the gate terminal of first PMOS tube access negative supply input terminal, the drain electrode end and the ESD of first PMOS tube
Circuit connection is protected, the substrate terminal of first PMOS tube is connect with the substrate switch unit.
Optionally, the substrate switch unit includes: the second PMOS tube and third PMOS tube, the source of second PMOS tube
It is extremely connect with the gate terminal of the third PMOS tube, while accessing supply voltage, the drain electrode end of second PMOS tube and institute
The drain electrode end connection of third PMOS tube is stated, the gate terminal of second PMOS tube is connect with the source terminal of the third PMOS tube,
The input voltage of the internal circuit, the substrate terminal of the substrate terminal of second PMOS tube and the third PMOS tube are accessed simultaneously
Connection, while being connect with the drain electrode end of second PMOS tube.
Optionally, the esd protection circuit includes: a NMOS tube, the drain electrode end of the NMOS tube and the anti-reverse electricity
Road connection, the source terminal of the NMOS tube is connect with its gate terminal, while being connect with the negative supply input terminal, the NMOS tube
Substrate terminal connect with its source terminal.
As described above, a kind of esd protection circuit with reverse-connection preventing circuit of the utility model, has below beneficial to effect
Fruit: while the utility model carries out ESD protection to the internal circuit by the esd protection circuit, pass through the counnter attack
It connects circuit and the anti-reverse protection of supply voltage is carried out to entire circuit system, cause supply voltage to be reversely connected to avoid because of upset operation
When, the problems such as burning, is caused to entire circuit system.The utility model more passes through the substrate switch unit to described anti-reverse
The underlayer voltage of unit is selected, and the case where substrate leakage occurs to avoid the anti-reverse unit.
Detailed description of the invention
Fig. 1 is shown as the electrical block diagram of existing esd protection circuit.
Fig. 2 is shown as the electrical block diagram of the esd protection circuit described in the utility model with reverse-connection preventing circuit.
Fig. 3 is shown as the schematic diagram of implementation method described in the utility model.
Component label instructions
10 existing esd protection circuits
20 esd protection circuits with reverse-connection preventing circuit
21 esd protection circuits
22 reverse-connection preventing circuits
221 anti-reverse units
222 substrate switch units
Specific embodiment
Illustrate the embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this theory
Content disclosed by bright book understands other advantages and effect of the utility model easily.The utility model can also be by addition
Different specific embodiments are embodied or practiced, and the various details in this specification can also be based on different viewpoints and answer
With carrying out various modifications or alterations under the spirit without departing from the utility model.
Please refer to Fig. 2 and Fig. 3.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of utility model is only shown with related component in the utility model rather than when according to actual implementation in schema then
Component count, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind
Become, and its assembly layout kenel may also be increasingly complex.
As shown in Fig. 2, the present embodiment provides a kind of esd protection circuit with reverse-connection preventing circuit, it is described with anti-reverse
The esd protection circuit 20 of circuit includes:
Esd protection circuit 21, is connected between power input and internal circuit, for carrying out to the internal circuit
ESD protection；And
Reverse-connection preventing circuit 22 is connected between the power input and the esd protection circuit 21, for working as the electricity
When source input terminal accesses positive supply voltage, the reverse-connection preventing circuit conducting, the power input and the internal circuit it
Between access is presented；When the power input accesses reverse electrical source voltage, the reverse-connection preventing circuit shutdown, the power input
It presents and opens a way between end and the internal circuit, to carry out anti-reverse protection.
As an example, as shown in Fig. 2, the power input includes positive supply input terminal and negative supply input terminal；This reality
It applies in example, when the circuit works normally, the power input accesses positive supply voltage, i.e., the described positive supply input terminal
Meet supply voltage VDD, the negative supply input termination GND；When there is reverse power connection because of upset operation, the power input
It terminates into reverse electrical source voltage, i.e., the described positive supply input termination GND, the negative supply input termination supply voltage VDD.
As an example, as shown in Fig. 2, the internal circuit is that the circuit of any function can be achieved or can realize any several
The electrical combination of function.It should be noted that the present embodiment is merely to explanation is set to the power input and described interior
The esd protection circuit with reverse-connection preventing circuit between portion's circuit, therefore the particular circuit configurations of the internal circuit can't be right
Esd protection circuit described in the present embodiment with reverse-connection preventing circuit is limited.
As an example, as shown in Fig. 2, the esd protection circuit 21 includes: a NMOS tube NM1, the NMOS tube NM1's
Drain electrode end is connect with the reverse-connection preventing circuit 22, and the source terminal of the NMOS tube NM1 is connect with its gate terminal, while being born with described
Power input connection, the substrate terminal of the NMOS tube NM1 are connect with its source terminal.Specifically, the NMOS tube NM1 itself is also
With a parasitic diode Ds, the positive terminal of the parasitic diode Ds is connect with the source terminal of the NMOS tube NM1, described to post
The negative pole end of raw diode Ds is connect with the drain electrode end of the NMOS tube NM1.
Positive supply voltage (i.e. positive supply input termination VDD, negative supply input termination are accessed in the power input
When GND), the NMOS tube NM1 is in an off state, to carry out ESD protection to the internal circuit；In the power input
When accessing reverse electrical source voltage (i.e. positive supply input termination GND, negative supply input termination VDD), because of the reverse-connection preventing circuit 22
Shutdown, therefore the parasitic diode Ds is not turned on, and so as to avoid the generation of high current, and then avoids high current to entire electricity
The damage of road system.
As an example, as shown in Fig. 2, the reverse-connection preventing circuit 22 includes:
One anti-reverse unit 221, is connected between the power input and the esd protection circuit 21, for working as institute
When stating power input access forward direction supply voltage, the reverse-connection preventing circuit conducting, the power input and the inside are electric
Access is presented between road；When the power input accesses reverse electrical source voltage, the reverse-connection preventing circuit shutdown, the power supply
Open circuit is presented between input terminal and the internal circuit；And
Substrate switch unit 222 is connected to the anti-reverse unit 221, for electric from supply voltage VDD and the inside
Select high-potential voltage as the underlayer voltage of the anti-reverse unit 221 in the input voltage VIN on road.
Specifically, as shown in Fig. 2, the anti-reverse unit 221 includes: the first PMOS tube PM1, first PMOS tube
The source terminal of PM1 accesses positive supply input terminal, and the gate terminal of the first PMOS tube PM1 accesses negative supply input terminal, and described the
The drain electrode end of one PMOS tube PM1 is connect with the esd protection circuit, the substrate terminal of the first PMOS tube PM1 and the substrate
Switch unit connection.
Positive supply voltage (i.e. positive supply input termination VDD, negative supply input termination are accessed in the power input
When GND), if GND is 0V, for the first PMOS tube PM1, gate source voltage are as follows: VGS1=VG1-VS1=0-VDD=-
VDD；And for the supply voltage of normal circuit, VDD > | VTH1|, therefore the first PMOS tube PM1 is connected；Wherein, VTH1For
The turn-on threshold voltage of first PMOS tube PM1.
In the first PMOS tube PM1 conducting, the input voltage of the internal circuit are as follows: VIN=VDD-I1*RDSON1,
Wherein, I1Conducting electric current (while being also the electric current summation of the internal circuit) when being connected for the first PMOS tube PM1,
RDSON1Conducting resistance when being connected for the first PMOS tube PM1；When the internal circuit needs electric current I to be offered1It is bigger, institute
The pressure drop stated on the first PMOS tube PM1 is also bigger, and the input voltage VIN so as to cause the internal circuit is smaller；If dropped
Pressure drop on the low first PMOS tube PM1, it is necessary to reduce conducting resistance R when the first PMOS tube PM1 conductingDSON1；
Therefore in the present embodiment, need to comprehensively consider the driving capability of the internal circuit, to select the first PMOS tube PM1's
Size.
Reverse electrical source voltage (i.e. positive supply input termination GND, negative supply input termination are accessed in the power input
When VDD), if GND is 0V, for the first PMOS tube PM1, gate source voltage are as follows: VGS1=VG1-VS1=VDD-0=
VDD, the first PMOS tube PM1 shutdown, is presented open circuit, VDD- at this time between the power input and the internal circuit
There is no electric current in GND power path, therefore high current will not be generated at the parasitic diode Ds in the esd protection circuit, it is right
Entire circuit system plays the role of anti-reverse protection.
Specifically, as shown in Fig. 2, the substrate switch unit 222 includes: the second PMOS tube PM2 and third PMOS tube
PM3, the source terminal of the second PMOS tube PM2 is connect with the gate terminal of the third PMOS tube PM3, while accessing supply voltage
VDD, the drain electrode end of the second PMOS tube PM2 are connect with the drain electrode end of the third PMOS tube PM3, second PMOS tube
The gate terminal of PM2 is connect with the source terminal of the third PMOS tube PM3, while accessing the input voltage VIN of the internal circuit,
The substrate terminal of the second PMOS tube PM2 is connect with the substrate terminal of the third PMOS tube PM3, at the same with second PMOS tube
The drain electrode end of PM2 connects.
When supply voltage VDD is greater than input voltage VIN, the second PMOS tube PM2 conducting accesses described first at this time
The underlayer voltage VDP of PMOS tube PM1 substrate terminal is equal to supply voltage VDD；When supply voltage VDD is less than input voltage VIN, institute
Third PMOS tube PM3 conducting is stated, the underlayer voltage VDP for accessing the first PMOS tube PM1 substrate terminal at this time is equal to input voltage
VIN；As it can be seen that substrate switching circuit 222 described in the present embodiment can select high potential from supply voltage VDD and input voltage VIN
Voltage is as the underlayer voltage VDP for accessing the first PMOS tube PM1 substrate terminal, to guarantee the lining of the first PMOS tube PM1
Bottom diode is in reverse-biased, the case where from without substrate leakage.
As shown in figure 3, present embodiments providing a kind of reality of esd protection circuit with reverse-connection preventing circuit as described above
Existing method, the implementation method include:
When the power input accesses positive supply voltage, the reverse-connection preventing circuit conducting, the esd protection circuit
Shutdown while so as to which access is presented between the power input and the internal circuit, carries out ESD to the internal circuit
Protection；
When the power input accesses reverse electrical source voltage, the reverse-connection preventing circuit shutdown, so that the power supply is defeated
Enter to present between end and the internal circuit and open a way, to carry out anti-reverse protection.
Specifically, when the power input accesses positive supply voltage, (i.e. positive supply input termination VDD, negative supply are defeated
Enter to terminate GND) when, the first PMOS tube PM1 conducting, the NMOS tube NM1 is turned off, the power input and the inside
While access is presented between circuit, ESD protection is carried out to the internal circuit；When the power input accesses reverse electrical source
When voltage (i.e. positive supply input termination GND, negative supply input termination VDD), the first PMOS tube PM1 shutdown, the power supply
Open circuit is presented between input terminal and the internal circuit, does not have electric current in VDD-GND power path, therefore the esd protection circuit
In parasitic diode Ds at will not generate high current, play the role of anti-reverse protection to entire circuit system.
As an example, the substrate switch unit is selected from the input voltage of the supply voltage and the internal circuit
There is substrate leakage to avoid the anti-reverse unit in underlayer voltage of the high-potential voltage as the anti-reverse unit.
In conclusion a kind of esd protection circuit with reverse-connection preventing circuit of the utility model, has below beneficial to effect
Fruit: while the utility model carries out ESD protection to the internal circuit by the esd protection circuit, pass through the counnter attack
It connects circuit and the anti-reverse protection of supply voltage is carried out to entire circuit system, cause supply voltage to be reversely connected to avoid because of upset operation
When, the problems such as burning, is caused to entire circuit system.The utility model more passes through the substrate switch unit to described anti-reverse
The underlayer voltage of unit is selected, and the case where substrate leakage occurs to avoid the anti-reverse unit.So the utility model
It effectively overcomes various shortcoming in the prior art and has high industrial utilization value.
The above embodiments are only illustrative of the principle and efficacy of the utility model, and not for limitation, this is practical new
Type.Any person skilled in the art can all carry out above-described embodiment under the spirit and scope without prejudice to the utility model
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the revealed essence of the utility model
All equivalent modifications or change completed under mind and technical idea, should be covered by the claim of the utility model.
Claims (5)
1. a kind of esd protection circuit with reverse-connection preventing circuit, which is characterized in that the ESD protection with reverse-connection preventing circuit
Circuit includes:
Esd protection circuit is connected between power input and internal circuit, for carrying out ESD protection to the internal circuit；
And
Reverse-connection preventing circuit is connected between the power input and the esd protection circuit, for working as the power input
When accessing positive supply voltage, the reverse-connection preventing circuit conducting is presented logical between the power input and the internal circuit
Road；When the power input accesses reverse electrical source voltage, reverse-connection preventing circuit shutdown, the power input with it is described
Open circuit is presented between internal circuit, to carry out anti-reverse protection.
2. the esd protection circuit according to claim 1 with reverse-connection preventing circuit, which is characterized in that the anti-reverse electricity
Road includes: an anti-reverse unit and the substrate switch unit for being connected to the anti-reverse unit, wherein the substrate switch unit
For selecting high-potential voltage as the lining of the anti-reverse unit from the input voltage of supply voltage and the internal circuit
Bottom voltage.
3. the esd protection circuit according to claim 2 with reverse-connection preventing circuit, which is characterized in that the counnter attack order
Member includes: the first PMOS tube, and the source terminal of first PMOS tube accesses positive supply input terminal, the grid of first PMOS tube
It terminates into negative supply input terminal, the drain electrode end of first PMOS tube is connect with the esd protection circuit, first PMOS tube
Substrate terminal connect with the substrate switch unit.
4. the esd protection circuit according to claim 2 with reverse-connection preventing circuit, which is characterized in that the substrate switching
Unit includes: the second PMOS tube and third PMOS tube, the grid of the source terminal of second PMOS tube and the third PMOS tube
End connection, while supply voltage is accessed, the drain electrode end of second PMOS tube is connect with the drain electrode end of the third PMOS tube, institute
The gate terminal for stating the second PMOS tube is connect with the source terminal of the third PMOS tube, while accessing the input electricity of the internal circuit
Pressure, the substrate terminal of second PMOS tube connect with the substrate terminal of the third PMOS tube, at the same with second PMOS tube
Drain electrode end connection.
5. the esd protection circuit according to claim 1 with reverse-connection preventing circuit, which is characterized in that the ESD protection electricity
Road includes: a NMOS tube, and the drain electrode end of the NMOS tube is connect with the reverse-connection preventing circuit, the source terminal of the NMOS tube and its
Gate terminal connection, while being connect with negative supply input terminal, the substrate terminal of the NMOS tube is connect with its source terminal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821204302.0U CN208623330U (en) | 2018-07-27 | 2018-07-27 | A kind of esd protection circuit with reverse-connection preventing circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821204302.0U CN208623330U (en) | 2018-07-27 | 2018-07-27 | A kind of esd protection circuit with reverse-connection preventing circuit |
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| Publication Number | Publication Date |
|---|---|
| CN208623330U true CN208623330U (en) | 2019-03-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821204302.0U Active CN208623330U (en) | 2018-07-27 | 2018-07-27 | A kind of esd protection circuit with reverse-connection preventing circuit |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108599130A (en) * | 2018-07-27 | 2018-09-28 | 上海南麟电子股份有限公司 | A kind of esd protection circuit and its implementation with reverse-connection preventing circuit |
| CN110048478A (en) * | 2019-04-22 | 2019-07-23 | 上海芯荃微电子科技有限公司 | There is the emergency power supply driving circuit of reverse connecting protection |
| CN111509687A (en) * | 2020-05-22 | 2020-08-07 | 上海传卓电子有限公司 | ESD circuit with reverse protection function for high-voltage band |
| CN112994188A (en) * | 2021-04-27 | 2021-06-18 | 上海南麟电子股份有限公司 | Reverse connection protection circuit for rechargeable battery and battery protection chip |
-
2018
- 2018-07-27 CN CN201821204302.0U patent/CN208623330U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108599130A (en) * | 2018-07-27 | 2018-09-28 | 上海南麟电子股份有限公司 | A kind of esd protection circuit and its implementation with reverse-connection preventing circuit |
| CN108599130B (en) * | 2018-07-27 | 2024-03-29 | 上海南麟电子股份有限公司 | ESD protection circuit with reverse connection preventing circuit and implementation method thereof |
| CN110048478A (en) * | 2019-04-22 | 2019-07-23 | 上海芯荃微电子科技有限公司 | There is the emergency power supply driving circuit of reverse connecting protection |
| CN110048478B (en) * | 2019-04-22 | 2024-05-17 | 上海芯荃微电子科技有限公司 | Emergency power supply driving circuit with reverse connection protection |
| CN111509687A (en) * | 2020-05-22 | 2020-08-07 | 上海传卓电子有限公司 | ESD circuit with reverse protection function for high-voltage band |
| CN112994188A (en) * | 2021-04-27 | 2021-06-18 | 上海南麟电子股份有限公司 | Reverse connection protection circuit for rechargeable battery and battery protection chip |
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