CN110048478B - Emergency power supply driving circuit with reverse connection protection - Google Patents
Emergency power supply driving circuit with reverse connection protection Download PDFInfo
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- CN110048478B CN110048478B CN201910321497.XA CN201910321497A CN110048478B CN 110048478 B CN110048478 B CN 110048478B CN 201910321497 A CN201910321497 A CN 201910321497A CN 110048478 B CN110048478 B CN 110048478B
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- insulated gate
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- 238000002955 isolation Methods 0.000 claims abstract description 68
- 230000005669 field effect Effects 0.000 claims description 78
- 239000000758 substrate Substances 0.000 claims description 8
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 10
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 7
- 229910001416 lithium ion Inorganic materials 0.000 description 7
- 238000000034 method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H11/00—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result
- H02H11/002—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of inverted polarity or connection; with switching for obtaining correct connection
- H02H11/003—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of inverted polarity or connection; with switching for obtaining correct connection using a field effect transistor as protecting element in one of the supply lines
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/0029—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
- H02J7/0034—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits using reverse polarity correcting or protecting circuits
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Charge And Discharge Circuits For Batteries Or The Like (AREA)
- Protection Of Static Devices (AREA)
Abstract
The invention relates to an emergency power supply driving circuit with reverse connection protection, which comprises a power supply, a first ESD protection circuit, a high-power driving circuit, an emergency circuit and a reverse connection protection isolation device, wherein the reverse connection protection isolation device, the first ESD protection circuit and the power supply form a first reverse connection protection circuit, and the high-power driving circuit and the power supply form an emergency driving circuit through the emergency circuit. The reverse connection protection isolation device can be arranged inside the chip, the reverse connection protection isolation device protects the first ESD protection circuit, the reverse connection protection isolation device does not need to protect the whole load, and when a large current exists, the large current cannot flow through the reverse connection protection isolation device, so that the circuit benefit is high, the size of the reverse connection protection isolation device is not limited, and the reverse connection protection isolation device can be made very small.
Description
Technical Field
The invention belongs to the field of electronics, and particularly relates to an emergency power supply driving circuit with reverse connection protection.
Background
Battery powered products are increasing, most of which do not have reverse connection protection. And the external diode is generally adopted for reverse connection protection, and the unidirectional conduction characteristic of the diode is utilized to block the power supply loop. The disadvantages of this approach are: 1. the power consumption is large, the forward conduction voltage drop of a common diode is 0.7V, and the good conduction voltage drop is also 0.3V.2. The cost is high. 3. At low voltage, the effective voltage of the chip is low due to the influence of forward conduction voltage drop, and the lowest working voltage of the battery is limited.
The patent application number is: 201621271964.0 the invention is named as: a reverse connection protection circuit for a game handle battery and a game handle are disclosed in the patent, wherein the reverse connection protection circuit is isolated by adopting an external MOS mode. Although the external MOS method can partially compensate the problem of overlarge power consumption caused by the external diode scheme, once large current is needed for power supply, the requirement on the on-resistance of the MOS is very strict. And outside the chip is necessary for tubes carrying large currents. In addition, since the discharge current is large, a large current needs to flow through the MOS transistor or the diode, which results in large power consumption. The waste of energy is caused, and the battery can not be fully utilized. Limiting the minimum operating voltage of the battery. The emergency power driving scheme as in fig. 1, which performs lithium ion battery protection due to the need to detect the state of the lithium ion battery. It is also necessary to determine the status of the AC power source and if the AC power source is shorted or low resistive (< 2 Mohm), the emergency LED particles are lit. Because the power supply type driving circuit needs to have high-power current flowing through the driving chip, and meanwhile, the energy-saving market requires batteries to be as high as possible in efficiency, a chip method for improving the purely external protection circuit is urgently needed.
Disclosure of Invention
The invention aims to provide an emergency power supply driving circuit with reverse connection protection, wherein a reverse connection protection isolation device can be arranged in a chip and provides reverse connection protection for a first ESD protection circuit.
The technical implementation scheme of the invention is as follows: the emergency power supply driving circuit with the reverse connection protection comprises a power supply, a first ESD protection circuit, a high-power driving circuit and an emergency circuit, and further comprises a reverse connection protection isolation device, wherein the reverse connection protection isolation device, the first ESD protection circuit and the power supply form a first reverse connection protection loop, and the high-power driving circuit and the power supply form an emergency driving loop through the emergency circuit.
Based on the above object, a further improvement of the present invention is: the battery protection and battery power supply internal module is connected in parallel to two ends of the first ESD protection circuit.
Based on the above object, a further improvement of the present invention is: the anti-static protection circuit also comprises a second ESD protection circuit, an internal VDD generating circuit, an over-discharge protection circuit and an over-charge protection circuit, wherein the second ESD protection circuit is connected with the internal VDD generating circuit in parallel and forms a second anti-static protection circuit with the anti-static protection isolation device, the over-discharge protection circuit, the over-charge protection circuit and the power supply.
Based on the above object, a further improvement of the present invention is: the high-power driving circuit further comprises a voltage doubling circuit, wherein the output end of the internal VDD generating circuit is connected to the input end of the voltage doubling circuit, and the output end of the voltage doubling circuit is connected to the control end of the high-power driving circuit.
Based on the above object, a further improvement of the present invention is: the high-power driving circuit comprises a fourth N-channel enhanced insulated gate type field effect transistor, wherein the drain electrode of the fourth N-channel enhanced insulated gate type field effect transistor is connected to the positive electrode of the power supply, the grid electrode of the fourth N-channel enhanced insulated gate type field effect transistor is connected to the output end of the voltage doubling circuit, and the source electrode of the fourth N-channel enhanced insulated gate type field effect transistor is connected to the input end of the emergency circuit.
Based on the above object, a further improvement of the present invention is: the high-power driving circuit is characterized by further comprising a substrate low-potential selecting circuit which is connected with the high-power driving circuit in parallel.
Based on the above object, a further improvement of the present invention is: the reverse connection protection isolation device comprises a second P-channel enhanced insulated gate field effect transistor, wherein the drain electrode of the second P-channel enhanced insulated gate field effect transistor is connected to the positive electrode of a power supply, the grid electrode of the second P-channel enhanced insulated gate field effect transistor is connected to the negative electrode of the power supply through a first ESD resistor, the source electrode and the body electrode of the second P-channel enhanced insulated gate field effect transistor are connected and connected to one end of a first ESD protection circuit, and the other end of the first ESD protection circuit is connected to the negative electrode of the power supply.
Based on the above object, a further improvement of the present invention is: the reverse connection protection isolation device comprises a first reverse connection protection isolation circuit and a second reverse connection protection isolation circuit, the first ESD protection circuit 104, the first reverse connection protection isolation circuit and the battery form a first reverse connection protection loop, the second ESD protection circuit is connected with the internal VDD generating circuit in parallel and forms a second reverse connection protection loop with the second reverse connection protection isolation circuit, the overcharge protection circuit, the overdischarge protection circuit and the battery, the first reverse connection protection isolation circuit comprises a sixth N-channel enhanced insulated gate field effect transistor, one end of the first ESD protection circuit is connected to the positive electrode of the battery, the other end of the first ESD protection circuit is connected to the drain electrode of the sixth N-channel enhanced insulated gate field effect transistor, the grid electrode of the sixth N-channel enhanced insulated gate field effect transistor is connected to the positive electrode of the battery through a third ESD resistor, and the source electrode of the sixth N-channel enhanced insulated gate field effect transistor is connected with the body electrode and is connected to the negative electrode of the battery; the second reverse connection protection isolation circuit comprises a seventh N-channel enhanced insulated gate type field effect transistor, one end of the second ESD protection circuit is connected to the positive electrode of the battery, the other end of the second ESD protection circuit is connected to the drain electrode of the seventh N-channel enhanced insulated gate type field effect transistor, the grid electrode of the seventh N-channel enhanced insulated gate type field effect transistor is connected to the positive electrode of the battery through a fourth ESD resistor, the source electrode of the seventh N-channel enhanced insulated gate type field effect transistor is connected to the electrical ground and is connected with one end of the overcharge protection circuit, the other end of the overcharge protection circuit is connected to one end of the overdischarge protection circuit, and the other end of the overdischarge protection circuit is connected to the negative electrode of the battery.
Based on the above object, a further improvement of the present invention is: the reverse connection protection isolation device comprises a first reverse connection protection isolation circuit and a second reverse connection protection isolation circuit, the first ESD protection circuit 104, the first reverse connection protection isolation circuit and the battery form a first reverse connection protection loop, the second ESD protection circuit is connected with the internal VDD generating circuit in parallel and forms a second reverse connection protection loop with the second reverse connection protection isolation circuit, the overcharge protection circuit, the overdischarge protection circuit and the battery, the first reverse connection protection isolation circuit comprises a sixth N-channel enhanced insulated gate field effect transistor, one end of the first ESD protection circuit is connected to the positive electrode of the battery, the other end of the first ESD protection circuit is connected to the drain electrode of the sixth N-channel enhanced insulated gate field effect transistor, the grid electrode of the sixth N-channel enhanced insulated gate field effect transistor is connected to the positive electrode of the battery through a third ESD resistor, and the source electrode of the sixth N-channel enhanced insulated gate field effect transistor is connected with the body electrode and is connected to the negative electrode of the battery; the second reverse connection protection isolation circuit comprises an eighth P-channel enhancement type insulated gate field effect transistor Q8, the drain electrode and the body electrode of the eighth P-channel enhancement type insulated gate field effect transistor Q8 are connected and connected to the anode of the battery, the source electrode of the eighth P-channel enhancement type insulated gate field effect transistor Q8 is connected to the second ESD protection circuit, and the grid electrode of the eighth P-channel enhancement type insulated gate field effect transistor Q8 is connected to the electrical ground through a fifth ESD resistor.
Advantageous effects
The reverse connection protection isolation device can be arranged in the chip, the reverse connection protection isolation device protects the first ESD protection circuit, the reverse connection protection isolation device does not need to protect the whole load, and when a large current exists, the large current cannot flow through the reverse connection protection isolation device, so that the circuit benefit is high, the size of the reverse connection protection isolation device is not limited, and the reverse connection protection isolation device can be made small.
Description of the drawings:
FIG. 1 is a schematic diagram of a prior art circuit;
FIG. 2 is a circuit diagram of an inverse protection circuit according to an embodiment of the present invention;
FIG. 3 is a block diagram of a refinement circuit of an inverse protection circuit according to an embodiment of the present invention;
FIG. 4 is a circuit diagram of a second reverse connection protection circuit according to an embodiment of the present invention;
FIG. 5 is a block diagram of a refinement circuit of a second reverse connection protection circuit according to an embodiment of the present invention;
FIG. 6 is a block diagram of an emergency power supply drive circuit with reverse connection protection in accordance with the present invention;
FIG. 7 is an equivalent circuit diagram of an emergency power supply driving circuit with reverse connection protection when batteries are reversely connected;
FIG. 8 is a block diagram of an emergency power supply driving circuit with reverse connection protection according to a fourth embodiment of the present invention;
Fig. 9 is a block diagram of an emergency power supply driving circuit with reverse connection protection according to a fifth embodiment of the present invention.
The specific embodiment is as follows:
In order to make the objects, the principle and advantages of the technical scheme of the present invention more clear, the present invention will be further described in detail with reference to the accompanying drawings and the detailed description. In this embodiment, the specific embodiments described are merely for explaining the present invention, and are not intended to limit the present invention.
Example 1
As shown in fig. 2, 3 and 6, the emergency power supply driving circuit with reverse connection protection comprises a power supply, a first ESD protection circuit 104, a high-power driving circuit and an emergency circuit, wherein the power supply is a battery, the emergency power supply driving circuit also comprises a reverse connection protection isolation device, the positive electrode of the battery 101 is connected to the reverse connection protection isolation device, the reverse connection protection isolation device is connected to the first ESD protection circuit 104, the first ESD protection circuit 104 is connected to the negative electrode 115 of the power supply, the reverse connection protection isolation device, the first ESD protection circuit 104 and the battery 101 form a first reverse connection protection circuit, and the high-power driving circuit and the battery 101 form the emergency driving circuit through the emergency circuit. The reverse connection protection isolation device is a second P-channel enhancement type insulated gate field effect transistor Q2, a drain electrode of the second P-channel enhancement type insulated gate field effect transistor Q2 is connected to an anode of the battery 101, a gate electrode of the second P-channel enhancement type insulated gate field effect transistor Q2 is connected to a power supply negative electrode 115 through a first ESD resistor 103, a source electrode and a bulk electrode of the second P-channel enhancement type insulated gate field effect transistor Q2 are connected and serve as an internal power supply output end and are connected to one end of the first ESD protection circuit 104 in parallel, and the other end of the first ESD protection circuit 104 is connected to the power supply negative electrode 115.
Example two
As shown in fig. 4 to 5, the emergency power supply driving circuit with reverse connection protection comprises a battery, a first ESD protection circuit, a high-power driving circuit and an emergency circuit, and further comprises a reverse connection protection isolation device, wherein the positive electrode of the battery is connected to one end of the first ESD protection circuit, the other end of the first ESD protection circuit is connected to one end of the reverse connection protection isolation device, the other end of the reverse connection protection isolation device is connected to the negative electrode of the battery, the first ESD protection circuit, the reverse connection protection isolation device and the battery form a first reverse connection protection loop, and the high-power driving circuit and the battery form the emergency driving loop through the emergency circuit. The reverse connection protection isolation device comprises a fifth N-channel enhanced insulated gate field effect transistor Q5, the grid electrode of the fifth N-channel enhanced insulated gate field effect transistor Q5 is connected to the positive electrode of the battery through a second ESD resistor, the drain electrode of the fifth N-channel enhanced insulated gate field effect transistor Q5 is connected to the other end of the first ESD protection circuit, and the source electrode and the body electrode of the fifth N-channel enhanced insulated gate field effect transistor Q5 are connected to the negative electrode of the battery.
Example III
As shown in fig. 6, the emergency power supply driving circuit with reverse connection protection includes a battery, a reverse connection protection isolation device 102, a first ESD protection circuit 104, a battery protection and battery power supply internal module 105, a second ESD protection circuit 106, an internal VDD generation circuit 107, an over-discharge protection circuit 112, an over-charge protection circuit 113, a voltage doubling circuit 109, a high-power driving circuit 110, a substrate low-potential selecting circuit 111 and an emergency circuit 114, wherein the positive electrode of the battery 101 is connected to the reverse connection protection isolation device 102, the reverse connection protection isolation device 102 is connected to the first ESD protection circuit 104, the first ESD protection circuit 104 is connected to the power supply negative electrode 115, the reverse connection protection isolation device 102, the first ESD protection circuit 10 and the battery 101 form a first reverse connection protection circuit, and the high-power driving circuit and the battery 101 form an emergency driving circuit through the emergency circuit. The reverse connection protection isolation device 102 is a second P-channel enhancement type insulated gate field effect transistor Q2, the drain electrode of the second P-channel enhancement type insulated gate field effect transistor Q2 is connected to the positive electrode of the battery 101, the gate electrode of the second P-channel enhancement type insulated gate field effect transistor Q2 is connected to the power negative electrode 115 through the first ESD resistor 103, the source electrode and the bulk electrode of the second P-channel enhancement type insulated gate field effect transistor Q2 are connected and serve as the output end of the internal power supply 108 and are connected to one end of the first ESD protection circuit 104 in parallel, and the other end of the first ESD protection circuit 104 is connected to the power negative electrode 115. The battery protection and battery powered internal module 105 is connected in parallel across the first ESD protection circuit 104. The second ESD protection circuit 106 is connected in parallel with the internal VDD generation circuit 107 and forms a second reverse connection protection loop with the reverse connection protection isolation device 102, the overcharge protection circuit 113, the overdischarge protection circuit 112, and the battery 101. The source electrode and the body electrode of the second P-channel enhancement type insulated gate field effect transistor Q2 are connected to one end of the second ESD protection circuit 106 connected to the internal VDD generation circuit 107, the other end of the second ESD protection circuit 106 connected to the internal VDD generation circuit 1074 is connected to one end of the overcharge protection circuit 113 and connected to the electrical ground 116, the other end of the overcharge protection circuit 113 is connected to one end of the overdischarge protection circuit 112, and the other end of the overdischarge protection circuit 112 is connected to the battery cathode 115. The output end of the internal VDD generating circuit 107 is connected to the input end of the voltage doubling circuit 109, the output end of the voltage doubling circuit 109 is connected to the control end of the high-power driving circuit 110, and the substrate low-potential selecting circuit 111 is connected in parallel with the high-power driving circuit 110. The high-power driving circuit comprises a fourth N-channel enhanced insulated gate field effect transistor Q4, wherein the drain electrode of the fourth N-channel enhanced insulated gate field effect transistor Q4 is connected to the positive electrode of the power supply, the grid electrode of the fourth N-channel enhanced insulated gate field effect transistor is connected to the output end of the voltage doubling circuit, and the source electrode of the fourth N-channel enhanced insulated gate field effect transistor Q4 is connected to the input end of the emergency circuit 114.
Example IV
As shown in fig. 8, the difference from the third embodiment is that: the reverse connection protection isolation device comprises a first reverse connection protection isolation circuit and a second reverse connection protection isolation circuit, the first ESD protection circuit 104, the first reverse connection protection isolation circuit and the battery 101 form a first reverse connection protection circuit, the second ESD protection circuit 106 is connected with the internal VDD generating circuit 107 in parallel, and forms a second reverse connection protection circuit with the second reverse connection protection isolation circuit, the overcharge protection circuit 113, the overdischarge protection circuit 112 and the battery 101. The first reverse connection protection isolation circuit comprises a sixth N-channel enhancement type insulated gate field effect transistor Q6, one end of the first ESD protection circuit 104 is connected to the positive electrode of the battery, the other end of the first ESD protection circuit 104 is connected to the drain electrode of the sixth N-channel enhancement type insulated gate field effect transistor Q6, the gate electrode of the sixth N-channel enhancement type insulated gate field effect transistor Q6 is connected to the positive electrode of the battery through a third ESD resistor 1031, and the source electrode of the sixth N-channel enhancement type insulated gate field effect transistor Q6 is connected to the body electrode and the negative electrode of the battery 101. The second reverse connection protection isolation circuit comprises a seventh N-channel enhancement type insulated gate field effect transistor Q7, one end of the second ESD protection circuit 106 is connected to the positive electrode of the battery, the other end is connected to the drain electrode of the seventh N-channel enhancement type insulated gate field effect transistor Q7, the grid electrode of the seventh N-channel enhancement type insulated gate field effect transistor Q7 is connected to the positive electrode of the battery through a fourth ESD resistor, the source electrode of the seventh N-channel enhancement type insulated gate field effect transistor Q7 is connected to the electrical ground 116 and is connected to one end of the overcharge protection circuit 113, the other end of the overcharge protection circuit 113 is connected to one end of the overdischarge protection circuit 112, and the other end of the overdischarge protection circuit 112 is connected to the negative electrode 115 of the battery.
Example five
As shown in fig. 9, the fourth difference from the embodiment is that the second reverse connection protection isolation circuit includes an eighth P-channel enhancement type insulated gate field effect transistor Q8, the drain electrode and the bulk electrode of the eighth P-channel enhancement type insulated gate field effect transistor Q8 are connected to the positive electrode of the battery, the source electrode of the eighth P-channel enhancement type insulated gate field effect transistor Q8 is connected to the second ESD protection circuit 106 and the internal VDD generation circuit 107, and the gate electrode of the eighth P-channel enhancement type insulated gate field effect transistor Q8 is connected to the electrical ground through a fifth ESD resistor.
The target application of the design is the driving circuit of the emergency LED, and the invention is only described with respect to the battery reverse connection prevention protection part.
The external power source charges the battery through the positive terminal of the battery 101 and the electrical ground 116, and the overcharge and overdischarge protection circuit protects the battery and manages the charge and discharge of the battery.
102 Is a battery control part reverse voltage clamping tube, 103 is a first ESD resistor, a first ESD protection circuit 104 is ESD protection of a battery protection and battery power supply internal module part, and battery protection and battery power supply internal modules 105, 105 are battery protection and battery power supply internal modules. 112 is an over-discharge protection circuit and 113 is an over-charge protection circuit, 112 and 113 being connected in series between the battery negative terminal 115 and the electrical ground 116. 115 are the negative terminal of the battery and are also the electrical ground for the first ESD protection circuit 104 and the battery protection and battery powered internal module 105. The electrical ground 116 is an electrical ground of the second ESD protection circuit 106, the internal VDD generation circuit 107, the voltage doubler circuit 109, the high power driving circuit 110, and the substrate low potential selection circuit 111. The second ESD protection circuit 106 is ESD protection connected across the internal power supply 108 and the electrical ground 116, protecting the internal VDD generation circuit 107, the voltage doubler circuit 109, the high power drive circuit 110, and the substrate select low potential circuit 111 from electrostatic damage. 107 is an internal VDD generation circuit that converts the high voltage to a low voltage that can be used inside the chip. This voltage is provided to the voltage doubler 109, which generates a voltage that is one time higher than the voltage of the load 114, for driving the high power driving circuit 110. Because the potential of the load 114 may be externally connected with another driving during the system application process and generate a potential higher than the positive terminal potential of the high-power driving circuit 110, a low potential selection circuit, i.e. the substrate low potential selection circuit 111 is added, so that the substrate diode of the MOS transistor is ensured not to be abnormally conducted.
Referring to the equivalent circuit diagram when the reverse connection of the battery occurs as shown in fig. 7, it can be seen from fig. 7 that the battery 101 is reverse-connected in the reverse-connected battery 201, but the second P-channel enhancement type insulated gate field effect transistor 102 is equivalent to the first diode 202 in fig. 7, and the current path from the positive terminal of the lithium ion battery of the reverse-connected battery 201 is cut off. The over-discharge protection circuit 112 and the over-charge protection circuit 113 are respectively equivalent to a first equivalent switch 207 and a second equivalent switch 208, and since the lithium ion battery management part is equivalent to a second diode and a third diode 203 due to the reverse connection of the lithium ion battery, the first ESD protection circuit 104 and the battery protection and power supply internal module 105 of the part are equivalent to the first equivalent switch 207, that is, the approximate circuit floats on the positive electrode point of the lithium ion battery at this time, and therefore, the switching tube of the over-discharge protection circuit 112 is closed, but the body junction is turned on, and the equivalent is the first equivalent switch 207. 113 are in an on state at this point, equivalently the second equivalent switch 208. The load light emitting LED tube blocks the path between the positive electrode and the negative electrode of the reverse connection battery 201 due to the reverse interception effect. At this time, the positive to negative paths of the reverse lithium ion battery are blocked no matter whether the third equivalent switch 205 of the high power driving circuit 110 is turned on or not.
The foregoing description of the invention has been presented for purposes of illustration and description, and is not intended to be limiting. Several simple deductions, modifications or substitutions may also be made by a person skilled in the art to which the invention pertains, based on the idea of the invention.
Claims (6)
1. The emergency power supply driving circuit with the reverse connection protection comprises a power supply, a first ESD protection circuit, a high-power driving circuit and an emergency circuit, and is characterized in that: the high-power driving circuit comprises a high-power driving circuit, a first ESD protection circuit, a second ESD protection circuit, a battery power supply internal module, a second ESD protection circuit, an internal VDD generating circuit, an over-discharge protection circuit, an over-charge protection circuit and a voltage doubling circuit, wherein the high-power driving circuit and the power supply form an emergency driving circuit through the emergency circuit;
The power supply is a battery;
the battery protection and battery power supply internal module is connected in parallel with two ends of the first ESD protection circuit;
the output end of the internal VDD generating circuit is connected to the input end of the voltage doubling circuit, and the output end of the voltage doubling circuit is connected to the control end of the high-power driving circuit;
The reverse connection protection isolation device comprises a first reverse connection protection isolation circuit and a second reverse connection protection isolation circuit, the first ESD protection circuit, the first reverse connection protection isolation circuit and the battery are connected in series to form a first reverse connection protection loop, a branch circuit of the first ESD protection circuit, which is connected in series with the first reverse connection protection isolation circuit, is connected in parallel with a branch circuit of the emergency circuit, and the second ESD protection circuit is connected in parallel with the internal VDD generation circuit and forms a second reverse connection protection loop with the second reverse connection protection isolation circuit, the overcharge protection circuit, the overdischarge protection circuit and the battery.
2. The reverse protected emergency power supply driver circuit of claim 1, wherein: the high-power driving circuit comprises a fourth N-channel enhanced insulated gate type field effect transistor, wherein the drain electrode of the fourth N-channel enhanced insulated gate type field effect transistor is connected to the positive electrode of the power supply, the grid electrode of the fourth N-channel enhanced insulated gate type field effect transistor is connected to the output end of the voltage doubling circuit, and the source electrode of the fourth N-channel enhanced insulated gate type field effect transistor is connected to the input end of the emergency circuit.
3. The emergency power supply driving circuit with reverse connection protection according to claim 2, wherein: the high-power driving circuit is characterized by further comprising a substrate low-potential selecting circuit which is connected with the high-power driving circuit in parallel.
4.A reverse protected emergency power supply drive circuit according to any of claims 1 to 3, wherein: the first reverse connection protection isolation circuit comprises a second P-channel enhanced insulated gate type field effect transistor, the drain electrode of the second P-channel enhanced insulated gate type field effect transistor is connected to the positive electrode of the power supply, the grid electrode of the second P-channel enhanced insulated gate type field effect transistor is connected to the negative electrode of the power supply through a first ESD resistor, the source electrode and the body electrode of the second P-channel enhanced insulated gate type field effect transistor are connected and connected to one end of the first ESD protection circuit, and the other end of the first ESD protection circuit is connected to the negative electrode of the power supply.
5. The reverse protected emergency power supply driver circuit of claim 1, wherein: the first reverse connection protection isolation circuit comprises a sixth N-channel enhanced insulated gate type field effect transistor, one end of the first ESD protection circuit is connected to the positive electrode of the battery, the other end of the first ESD protection circuit is connected to the drain electrode of the sixth N-channel enhanced insulated gate type field effect transistor, the grid electrode of the sixth N-channel enhanced insulated gate type field effect transistor is connected to the positive electrode of the battery through a third ESD resistor, and the source electrode of the sixth N-channel enhanced insulated gate type field effect transistor is connected with the body electrode and is connected to the negative electrode of the battery; the second reverse connection protection isolation circuit comprises a seventh N-channel enhanced insulated gate type field effect transistor, one end of the second ESD protection circuit is connected to the positive electrode of the battery, the other end of the second ESD protection circuit is connected to the drain electrode of the seventh N-channel enhanced insulated gate type field effect transistor, the grid electrode of the seventh N-channel enhanced insulated gate type field effect transistor is connected to the positive electrode of the battery through a fourth ESD resistor, the source electrode of the seventh N-channel enhanced insulated gate type field effect transistor is connected to the electrical ground and is connected with one end of the overcharge protection circuit, the other end of the overcharge protection circuit is connected to one end of the overdischarge protection circuit, and the other end of the overdischarge protection circuit is connected to the negative electrode of the battery.
6. The reverse protected emergency power supply driver circuit of claim 1, wherein: the first reverse connection protection isolation circuit comprises a sixth N-channel enhanced insulated gate type field effect transistor, one end of the first ESD protection circuit is connected to the positive electrode of the battery, the other end of the first ESD protection circuit is connected to the drain electrode of the sixth N-channel enhanced insulated gate type field effect transistor, the grid electrode of the sixth N-channel enhanced insulated gate type field effect transistor is connected to the positive electrode of the battery through a third ESD resistor, and the source electrode of the sixth N-channel enhanced insulated gate type field effect transistor is connected with the body electrode and is connected to the negative electrode of the battery; the second reverse connection protection isolation circuit comprises an eighth P-channel enhancement type insulated gate field effect transistor Q8, the drain electrode and the body electrode of the eighth P-channel enhancement type insulated gate field effect transistor Q8 are connected and connected to the anode of the battery, the source electrode of the eighth P-channel enhancement type insulated gate field effect transistor Q8 is connected to the second ESD protection circuit, and the grid electrode of the eighth P-channel enhancement type insulated gate field effect transistor Q8 is connected to the electrical ground through a fifth ESD resistor.
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| CN201910321497.XA CN110048478B (en) | 2019-04-22 | 2019-04-22 | Emergency power supply driving circuit with reverse connection protection |
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| CN201910321497.XA CN110048478B (en) | 2019-04-22 | 2019-04-22 | Emergency power supply driving circuit with reverse connection protection |
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| CN110048478B true CN110048478B (en) | 2024-05-17 |
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103023005A (en) * | 2012-11-30 | 2013-04-03 | 无锡中星微电子有限公司 | Electrostatic protection circuit and battery protection circuit |
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| JP5631549B2 (en) * | 2009-02-13 | 2014-11-26 | セイコーインスツル株式会社 | Battery protection circuit device |
| JP6304789B2 (en) * | 2014-03-04 | 2018-04-04 | 華為終端（東莞）有限公司 | Charging circuit and terminal |
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| CN103023005A (en) * | 2012-11-30 | 2013-04-03 | 无锡中星微电子有限公司 | Electrostatic protection circuit and battery protection circuit |
| CN104979805A (en) * | 2015-07-08 | 2015-10-14 | 无锡中星微电子有限公司 | Bidirectional static protection circuit and battery protection circuit thereof |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN110048478A (en) | 2019-07-23 |
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