CN208385416U - 沟槽型功率器件 - Google Patents
沟槽型功率器件 Download PDFInfo
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- CN208385416U CN208385416U CN201821076817.7U CN201821076817U CN208385416U CN 208385416 U CN208385416 U CN 208385416U CN 201821076817 U CN201821076817 U CN 201821076817U CN 208385416 U CN208385416 U CN 208385416U
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- 239000010410 layer Substances 0.000 claims abstract description 95
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 37
- 239000011229 interlayer Substances 0.000 claims abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims 1
- 230000000694 effects Effects 0.000 description 4
- 239000012141 concentrate Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 208000033999 Device damage Diseases 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
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- Insulated Gate Type Field-Effect Transistor (AREA)
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201821076817.7U CN208385416U (zh) | 2018-07-09 | 2018-07-09 | 沟槽型功率器件 |
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CN201821076817.7U CN208385416U (zh) | 2018-07-09 | 2018-07-09 | 沟槽型功率器件 |
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CN208385416U true CN208385416U (zh) | 2019-01-15 |
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CN201821076817.7U Active CN208385416U (zh) | 2018-07-09 | 2018-07-09 | 沟槽型功率器件 |
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Effective date of registration: 20240205 Address after: 518000 Room 201, building A, 1 front Bay Road, Shenzhen Qianhai cooperation zone, Shenzhen, Guangdong Patentee after: Shenzhen Hemeiyuan Technology Co.,Ltd. Country or region after: China Address before: Room 501, Building NW20, Suzhou Nano City, No. 99 Jinjihu Avenue, Industrial Park, Suzhou City, Jiangsu Province, 215126 Patentee before: SUZHOU SILIKRON SEMICONDUCTOR TECHNOLOGY CO.,LTD. Country or region before: China |
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Effective date of registration: 20240322 Address after: Room 306, Building 2, No.1 Qingshan Road, High tech Zone, Suzhou City, Jiangsu Province, 215100 Patentee after: New Silicon Microelectronics (Suzhou) Co.,Ltd. Country or region after: China Address before: 518000 Room 201, building A, 1 front Bay Road, Shenzhen Qianhai cooperation zone, Shenzhen, Guangdong Patentee before: Shenzhen Hemeiyuan Technology Co.,Ltd. Country or region before: China |
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