CN208256703U - Laser photovoltaic cell and photoelectric converter - Google Patents
Laser photovoltaic cell and photoelectric converter Download PDFInfo
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- CN208256703U CN208256703U CN201820772552.8U CN201820772552U CN208256703U CN 208256703 U CN208256703 U CN 208256703U CN 201820772552 U CN201820772552 U CN 201820772552U CN 208256703 U CN208256703 U CN 208256703U
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Abstract
This disclosure relates to a kind of laser photovoltaic cell and the photoelectric converter comprising laser photovoltaic cell.The laser photovoltaic cell has incident side and backlight side, includes: back metal layer from backlight side to incident side sequence；In the reflection layer of back metal layer；And at least one sub- battery above reflection layer；Wherein, the back metal layer replaces substrate as the support substrate of at least one sub- battery.
Description
Technical field
The utility model relates to photovoltaic cell field more particularly to a kind of laser photovoltaic cell and photoelectric converters.
Background technique
Laser photovoltaic cell is a kind of semiconductor components and devices that laser light energy is converted to electric energy, has high-efficient, volume
Small, the features such as stability is good.It in actual use, cannot be directly as electronic device since the voltage of single battery is smaller
Power supply, therefore in order to obtain the output voltage met the requirements, multiple sub- concatenated sides of battery are used generally on single component
Formula obtains higher output voltage.
Concatenated mode includes laterally series connection and two kinds of lontitudinal series.Wherein, laterally concatenated photoelectric conversion efficiency is lower,
And technology difficulty increases with the increase of serial number.Lontitudinal series grow multiple son electricity by epitaxial growth regime on substrate
Pond realizes by tunnel junctions and connects, the photoelectric conversion efficiency of battery is higher between sub- battery.
In the laser photovoltaic cell of existing lontitudinal series, the fuel factor of device, limiter is significantly increased in the presence of substrate
The promotion of part photoelectric conversion efficiency and the performance for influencing device under high power conditions, and be unfavorable in certain output voltage
Under further be thinned battery thickness.
Utility model content
The embodiments of the present invention are directed to a kind of laser photovoltaic cell for improving structure, to further increase laser
Cell thickness is thinned in the photoelectric conversion efficiency of photovoltaic cell, promotes device performance.
One aspect according to the present utility model proposes a kind of laser photovoltaic cell, has incident side and backlight side, from back
Light side to incident side sequence includes: back metal layer；In the reflection layer of back metal layer；And above reflection layer extremely
A few sub- battery；Wherein, the back metal layer replaces substrate as the support substrate of at least one sub- battery.
According to some embodiments, at least one described sub- battery includes multiple sub- batteries, two neighboring sub- battery it
Between have tunnel junctions layer.
According to some embodiments, the reflection layer includes metal mirror layer.
According to some embodiments, the metal mirror layer includes Cu mirror layer, Ag mirror layer and Au reflecting mirror
One of layer.
According to some embodiments, the reflection layer includes Bragg reflecting layer.
According to some embodiments, the reflection layer includes metal mirror layer and the Bragg reflection of lamination arrangement
Layer, the Bragg reflecting layer is between metal mirror layer and sub- battery.
According to some embodiments, the Bragg reflecting layer include 1-3 layers of alternately arranged high refractive index material layer and
Low refractive index material layer.
According to some embodiments, the back metal layer includes electrode layer and contact electrode layer.
According to some embodiments, at least one described sub- battery includes the sub- battery of multiple GaAs.
Another aspect according to the present utility model proposes a kind of preparation method of laser photovoltaic cell, comprising: provides lining
Bottom；It is epitaxially grown on the substrate at least one sub- battery；Reflection layer is formed at least one described sub- battery；In the light
Back metal layer is formed on reflecting layer；And removal substrate, so that the back metal layer replaces substrate as at least one described son
The support substrate of battery.
Another aspect according to the present utility model proposes a kind of photoelectric converter, including laser photovoltaic as described above electricity
Pond.
The laser photovoltaic cell and its manufacturing method of embodiment according to the present utility model can by the way that reflection layer is arranged
To reduce substrate absorption, the photoelectric conversion efficiency of battery is improved, cell thickness is thinned；Meanwhile it carrying on the back metal layer and replacing substrate conduct
The support substrate of battery can be effectively improved the heat dissipation performance of battery, improve the maximum operating currenbt density of laser photovoltaic cell.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the laser photovoltaic cell of an exemplary embodiment according to the present utility model；
Fig. 2 is the structural schematic diagram according to the sub- battery of the laser photovoltaic cell of Fig. 1；
Fig. 3 is the structural schematic diagram according to the tunnel junctions layer of the laser photovoltaic cell of Fig. 1；
Fig. 4 is the flow chart of the preparation method of the laser photovoltaic cell of Fig. 1；
Fig. 5 is substrate desquamation in the laser photovoltaic cell preparation process of an exemplary embodiment according to the present utility model
Preceding structural schematic diagram；
Fig. 6 is to have made back metal layer and reflection layer and eliminated the laser photovoltaic cell formed after the substrate of Fig. 5
Structural schematic diagram；
Fig. 7 is the schematic diagram for designing each sub- cell thickness of the laser photovoltaic cell according to Fig. 6；
Fig. 8 is the structural schematic diagram of the laser photovoltaic cell of another exemplary embodiment according to the present utility model；With
And
Fig. 9 is the structural schematic diagram of the laser photovoltaic cell of another exemplary embodiment according to the present utility model.
Specific embodiment
It is practical new below in conjunction with this to keep the objectives, technical solutions, and advantages of the embodiments of the present invention clearer
The technical solution of the utility model embodiment is clearly and completely described in the attached drawing of type embodiment.Unless otherwise defined,
In the utility model embodiment and attached drawing, same label represents same meaning.For clarity, practical for describing
In the attached drawing of novel embodiment, the thickness in layer or region is amplified；Also, in the attached drawing of some embodiments of the utility model,
Structure relevant to the utility model design is merely illustrated, other structures, which can refer to, to be commonly designed.In addition, some attached drawings only show
The basic structure of the utility model embodiment of anticipating out, and detail section is omitted.
Unless otherwise defined, the technical term or scientific term that the utility model uses are should be belonging to the utility model
The ordinary meaning that personage in field with general technical ability is understood." first ", " second " used in the utility model and
Similar word is not offered as any sequence, quantity or importance, and is used only to distinguish different component parts." comprising "
Or the similar word such as "comprising" indicates open meaning, other than component, assembly unit, part or the project clearly enumerated, and
It is not excluded for other elements, component, part or project.The similar word such as " connection " or " connected " is not limited to physics
Or mechanical connection, but may include electrical connection, it is either direct or indirect."upper", "lower", " left side ",
" right side " etc. is only used for indicating relative positional relationship, after the absolute position for being described object changes, then the relative positional relationship
May correspondingly it change.It is appreciated that ought such as layer, film, region or underlay substrate etc element be referred to as be located at another member
When "above" or "below" part, which " direct " can be located at "above" or "below" another element, or may exist intermediary element.
Fig. 1 shows the structural representation of the laser photovoltaic cell 100 of an exemplary embodiment according to the present utility model
Figure.As shown in Figure 1, laser photovoltaic cell 100 has incident side A and backlight side B, include: from backlight side B to incident side A sequence
Carry on the back metal layer 70；Reflection layer 80 above back metal layer 70；And at least one sub- battery above reflection layer 80
10；Wherein, the back metal layer 70 replaces support substrate of the substrate as at least one sub- battery 10.
The laser photovoltaic cell 100 of the utility model is by setting reflection layer 80, so that in the item for keeping electric current constant
Under part, output voltage and fill factor are improved, to increase the efficiency of light absorption of laser photovoltaic cell 100, and then improves battery
Photoelectric conversion efficiency, meanwhile, under same output voltage, be thinned battery thickness.In addition, replacing leading to carry on the back metal layer 70
Support substrate of the normal insulating substrate as battery can be effectively improved the heat dissipation performance of battery, improve laser photovoltaic cell 100
Maximum operating currenbt density, to improve the comprehensive performance of battery.
Further, in some embodiments of the utility model, at least one sub- battery 10 may include multiple sub- batteries,
There is tunnel junctions layer 20 between two neighboring sub- battery 10 (referring to Fig. 5).Each sub- battery 10 is carried out by tunnel junctions layer 20
Series connection forms longitudinal multi-junction battery structure of NPN...PNPN or PNP...NPNP formula.Each sub- battery 10 can be by identical material
Material is constituted, such as can be GaAs, GaInP or other iii-vs, Group II-VI semiconductor material.The quantity of sub- battery 10 can root
It is set according to output voltage, the quantity of sub- battery 10 needed for output voltage is higher is more.Tunnel junctions layer 20 can be according to sub- battery 10
Material selects corresponding material.For example, each tunnel junctions layer 20 between the sub- battery of GaAs can be P+AlxGa1-xAs/N+
AlxGa1-xAs tunnel junctions layer, wherein x value is 0.22~0.5；Each tunnel junctions layer 20 between the sub- battery of GaInP can be P+
A1GaInP/N+A1GaInP hetero-junctions tunnel junctions layer.
Fig. 2 shows the structural schematic diagrams according to the sub- battery 10 of the laser photovoltaic cell 100 of Fig. 1, as shown in Fig. 2, sub
Battery 10 successively includes N by the sequence far from incident side A+Window layer 101, N+Emitter region 102, the base area P 103, P+Back surface field layer 104.
It successively include A1GaAs Window layer 101, N by the sequence far from incident side so that sub- battery 10 is the sub- battery of GaAs an example+Type GaAs
Emitter region 102, the base area p-type GaAs 103, P+Type AlGaAs back surface field layer 104.
In laser photovoltaic cell 100, the thickness of sub- battery 10 should ensure that the light energy that each sub- battery 10 absorbs is balanced,
Output electric current to guarantee each sub- battery 10 is close, the phenomenon that being clamped without series current.The thickness of sub- battery 10
Degree can be determined according to the reflectivity of the quantity of sub- battery 10, the absorption coefficient of battery material, reflection layer 80.In sub- battery 10
Absorbed layer typically refers to light absorbing material layer in sub- battery 10, including N+Emitter region 102 and the base area P 103.
Fig. 3 shows the structural schematic diagram of the tunnel junctions layer 20 of the laser photovoltaic cell 100 according to Fig. 1.As shown in figure 3,
It can successively include P+ tunnel junctions layer 201, P++ tunnel junctions layer 202, N++ tunnel junctions that tunnel junctions layer 20, which presses the direction far from incident side A,
Layer 203, N+ tunnel junctions layer 204.For example, tunnel junctions layer 20 presses the direction far from incident side A can in GaAs laser photovoltaic cell
It successively include P+AlxGaAs tunnel junctions layer 201, P++A1xGaAs tunnel junctions layer 202, N++AlxGaAs tunnel junctions layer 203, N+
AlyGaAs tunnel junctions layer 204.
In some embodiments, the reflection layer 80 of laser photovoltaic cell 100 may include metal mirror layer 30 (referring to figure
6), metal mirror layer 30 may include Cu mirror layer, Ag mirror layer and Au mirror layer or it is other have high light reflection
One of metal material of rate is a variety of.The thickness of metal mirror layer 30 can be in the range of 50~100nm.
In some embodiments, the reflection layer 80 of laser photovoltaic cell 100 may include Bragg reflecting layer 60 (referring to figure
8), to replace metal mirror layer 30.Bragg reflecting layer 60 may include multipair alternately arranged high refractive index material layer and low
Refractive index material, wherein high refractive index material layer and low refractive index material layer can be according to the operating waves of laser photovoltaic cell 100
It is long selected, generally select lattice constant match, string hinders small material, such as AlxGa1-xAs/AlyGa1-yAs or GaInP/GaAs etc.
Material, but it is not limited to both materials.The every thickness degree and periodicity of Bragg reflecting layer 60 can be according to optical maser wavelengths and reflection
Rate setting.For example, the periodicity of alternately arranged high refractive index material layer and low refractive index material layer in Bragg reflecting layer
It can be 1-15 period, thickness can be respectively 68.22nm and 56.22nm.Compared with metal mirror layer, Bragg reflection
The metal that layer is beneficial to prevent in back metal layer 70 spreads into sub- battery 10 and influences battery performance.
In some embodiments, the reflection layer 80 of laser photovoltaic cell 100 may include the metallic mirror of lamination arrangement
Layer 30 and Bragg reflecting layer 60, the wherein (reference between metal mirror layer 30 and sub- battery 10 of Bragg reflecting layer 60
Fig. 9).Bragg reflecting layer 60 is set between metal mirror layer 30 and sub- battery 10, is beneficial to prevent metal mirror layer
30 spread into sub- battery 10 with the metal in back metal layer 70 and influence battery performance.
In such embodiment, the design of the periodicity of Bragg reflecting layer 60 mainly considers following two factor:
1, because there is the presence of metal mirror layer 30, Bragg reflecting layer 60 is lower to reflectivity requirements, therefore to week
Issue requires lower.In view of the increase of the periodicity of Bragg reflecting layer 60 can introduce additional string resistance, lead to device thermal effect
It should increase, therefore, the fewer the periodicity of Bragg reflecting layer 60 the better；
2, sub- number of batteries is more, and output voltage is higher, and under conditions of high current, the fuel factor of device is larger, therefore, makees
The metallic atoms such as Ag or Au for metal mirror layer 30 migratory activity with higher, and the presence of Bragg reflecting layer 60 can
To effectively prevent metallic atom to need the Bragg reflecting layer 60 of some cycles number to the influence of sub- battery 10.
In summary two o'clock includes the metal mirror layer 30 and Bragg reflecting layer 60 of lamination arrangement in reflection layer 80
Specific embodiment in, can be according to sub- number of batteries, the material of metal mirror layer 30 and material of Bragg reflecting layer 60 etc.
Determine the periodicity of Bragg reflecting layer 60.Preferably, Bragg reflecting layer includes the alternately arranged high refraction in 1-3 period
Rate material layer and low refractive index material layer.
In some embodiments of the utility model, for example, see Fig. 6,8,9, carrying on the back metal layer 70 may include 71 He of electrode layer
Contact electrode layer 72, electrode layer 71 may include the metal layer such as copper, nickel, molybdenum, titanium.The thickness of metal layer 70 is carried on the back for example in 15 μ
Between m-50 μm, preferably between 20 μm -40 μm, more preferably between 20-30 μm, it is suitable for the support substrate of battery.Electricity
Pole contact layer 72 may include the lamination by the Pd/Zn/Pd of electron beam evaporation, thermal evaporation or Grown by Magnetron Sputtering.
Fig. 4 is the flow chart for showing the preparation method of laser photovoltaic cell 100 of Fig. 1, as shown, including following step
It is rapid:
Substrate 90 is provided；
At least one sub- battery 10 of epitaxial growth on substrate 90；
Reflection layer 80 is formed at least one sub- battery 10；
Back metal layer 70 is formed on reflection layer 80；And
Substrate 90 is removed, so that back metal layer 70 replaces support substrate of the substrate 90 as at least one sub- battery 10.It can
Substrate 90 is removed using the methods of chemical attack, mechanical lapping.
Later, metal layer 70 can be carried on the back and be inverted obtained battery structure as support substrate, and made on sub- battery 10
Make the structures such as antireflective coating, front electrode.
The following detailed description of the exemplary structure of the laser photovoltaic cell of specific embodiment according to the present utility model.
Fig. 5 is that substrate 90 is shelled in the laser photovoltaic cell preparation process of an exemplary embodiment according to the present utility model
From preceding structural schematic diagram.Fig. 6 is to have made back metal layer 70 and reflection layer 30 and eliminated swashing of being formed after the substrate of Fig. 5
The structural schematic diagram of light photovoltaic cell.
Referring to Fig. 5-6, provides and a kind of based on GaAs material and select metal mirror layer 30 as the laser of reflection layer
Photovoltaic cell 200.As shown in fig. 6, laser photovoltaic cell 200 includes: the sub- battery 10 of GaAs of 6 vertical stackings, is set to
Tunnel junctions 20 between the sub- battery 10 of GaAs and positioned at the metal mirror layer 30 of battery backlight side and as cell support
The back metal layer 70 of substrate.Carrying on the back metal layer 70 includes electrode layer 71 and contact electrode layer 72.The laser photovoltaic cell of the present embodiment
200 targeted best laser wavelength ranges are between 760nm to 860nm.
As shown in figure 5, the laser photovoltaic cell 200 of the present embodiment selects substrate 90 of the GaAs epitaxial structures growth,
The conduction type of GaAs substrate 90 is unlimited.Pass through vapor phase epitaxial growth technology (MOCVD) or molecular beam on GaAs substrate 90
Epitaxy technology (MBE) successively epitaxial growth AlAs sacrificial layer 91, conductive layer 1001, the first sub- battery 10, the first tunnel junctions layer 20,
Second sub- battery 10, the sub- battery 10 of the second tunnel junctions layer 20..... the 5th, the 5th tunnel junctions layer 20, the 6th sub- battery 10.
Further, each of the laser photovoltaic cell 200 of the present embodiment battery 10 press the direction far from incident side A according to
Secondary includes A1GaAs Window layer 101, N+Type GaAs emitter region 102, the base area p-type GaAs 103, AlGaAs back surface field layer 104.In this reality
It applies in example, Window layer 101 and the preferred Si of emitter region 102 doping, doping concentration 2E18cm-3；The base area GaAs 103 and back surface field layer
104 preferred Zn doping, doping concentration is respectively 1E17cm-3And 2E18cm-3。
Further, each tunnel junctions layer 20 of the laser photovoltaic cell 200 of the present embodiment presses the direction far from incident side
It is successively P+AlxGaAs tunnel junctions layer 201, P++AlxGaAs tunnel junctions layer 202, N++AlxGaAs tunnel junctions layer 203, N+
AlyGaAs tunnel junctions layer 204.In the present embodiment, the preferred value 0.22 of x, the preferred value of y are 0.1；Tunnel junctions layer 201,202,
203 and 204 doping distinguishes preferred C, C, Te, Si, and doping concentration be respectively preferably 1E20cm-3,2E20cm-3,
5E20cm-3,1E20cm-3.Tunnel junctions layer 20 used by the present embodiment is more suitable in the present invention than traditional tunnel junctions
It uses, there is lower series voltage and higher peak point current, and to input light energy transparent without absorption.
Further, it referring to Fig. 6, is provided on 104 surface of back surface field layer of the 6th sub- battery 10 of laser photovoltaic cell 200
Metal mirror layer 30.In the present embodiment, preferably one layer of electron beam evaporation, thermal evaporation or Grown by Magnetron Sputtering 100nm Ag make
For metal mirror layer 30；It is preferred that electron beam evaporation, thermal evaporation or Grown by Magnetron Sputtering Pd/Zn/Pd lamination are contacted as electrode
Layer 72；It is preferred that galvanoplastic grow the metal layer (such as copper, nickel, molybdenum, titanium etc.) of one layer of 15~30 μ m-thick as electrode layer 71 and knot
Structure support.
In the present embodiment, substrate 90 is separated with other battery structures by chemical attack AlAs sacrificial layer 91, later
The battery structure for peeling off substrate 90 is inverted again, carries out subsequent antireflective coating 50, the isostructural production of front electrode 40.
Specifically, the figure of gate line electrode 40 is carved on the conductive layer 1001 of laser photovoltaic cell 200 by photolithography method
Case passes through electron beam evaporation, thermal evaporation or Grown by Magnetron Sputtering gate line electrode 40 again later.Gate line electrode 40 is by AuGe/Ni/Au
Successively lamination is constituted for material layer, Ag material layer and Au material layer.
Further, gate line electrode 40 will be removed by chemical corrosion method on the conductive layer 1001 of laser photovoltaic cell 200
Exterior domain conductive removal, expose the first sub- battery layers Window layer 101；It is deposited on exposed 101 surface of Window layer
ZnSe/MgF antireflection layer 50 increases the absorption efficiency of light, so that battery efficiency further increases to greatest extent.
Fig. 7 is the schematic diagram for designing each sub- cell thickness of the laser photovoltaic cell 200 according to the embodiment of Fig. 6, such as Fig. 7
Shown, x coordinate indicates the superposition of each sub- battery obsorbing layer thickness since the first sub- battery upper surface, and 0 to x1 indicates that light passes through
The absorption of first sub- battery obsorbing layer, x1 to x2 indicate that remaining light is in the suction of the second sub- battery after the first sub- battery absorbs
It receives, and so on, x5 to x6 indicates that remaining light is in the absorption of the 6th sub- battery after the first to the 5th sub- battery absorbs.?
6th sub- battery lower surface is metal mirror layer 30, and the light penetrated from the 6th lower surface can be reflected back toward in reflectivity ratio
It goes, therefore, x6 to x7 indicates that the light reflected by metal mirror layer 30 is absorbed by the 6th sub- battery, and x7 to x8 indicates reflection
Light after the 6th sub- battery absorbs remaining light the 5th sub- battery absorption, and so on, x11 to x12 expression reflected light
Absorption of the remaining light in the first sub- battery after the six to the second sub- battery absorbs.In the present embodiment, sub- battery 10
Quantity is n=6, takes absorption coefficient=1 μm of GaAs material-1, metal mirror layer 30 reflectivity R=0.98, for meet inhale
98% incident laser energy is received, according to known formula, the thickness d of absorbed layer should meet following equations in each sub- battery of GaAs:
1)
2)
3)
4)
5)
6)
7) x1-0=x12-x11
8) x2-x1=x11-x10
9) x3-x2=x10-x9
10) x4-x3=x9-x8
11) x5-x4=x8-x7
12) x6-x5=x7-x6
From plane of illumination (incident side) each sub- cell thickness down:
1) d1=x1-0
2) d2=x2-x1
3) d3=x3-x2
4) d4=x4-x3
5) d5=x5-x4
6) d6=x6-x5
Above-mentioned equation group is solved, obtains in the present embodiment that each sub- battery obsorbing layer optimal thickness is followed successively by down from plane of illumination
175.1nm, 210.6nm, 262.8nm, 344.4nm, 475.9nm, 640nm, absorbed layer overall thickness are 2108.8nm.
Comparatively, in the battery structure of not set metal mirror layer 30 and the GaAs substrate of back metal layer 70, it can
Reflectivity R is considered as 0, substituting into above-mentioned equation can be obtained at this time that each sub- battery optimal thickness is followed successively by down from plane of illumination
178.3nm, 217.1nm, 277.8nm, 386.0nm, 636.9nm, 2212.6nm, absorbed layer overall thickness are 3908.7nm.
Therefore, cell thickness can be substantially thinned relative to routine techniques in the utility model embodiment, reduce device preparation
Cost；Meanwhile thinned cell thickness can also improve the heat dissipation performance of battery, battery can work in 10A/cm2Even higher
High current condition, suitable for the application under higher power density conditions.
The structure that Fig. 8 shows the laser photovoltaic cell 300 of another exemplary embodiment according to the present utility model is shown
It is intended to, specifically, provides a kind of laser photovoltaic cell 300 using Bragg reflecting layer 60 as reflection layer.
In the present embodiment, sub- battery 10 and the structure of tunnel junctions layer 20 and the embodiment of Fig. 6 are identical, material, thickness,
Details are not described herein for doping and preparation method etc., and difference is: the backlight side of the laser photovoltaic cell 300 in the present embodiment is set
Bragg reflecting layer 60 is equipped with as reflection layer.
Specifically, in the present embodiment, continue after the back surface field layer using the sub- battery of MBE or MOCVD method growth regulation six
Epitaxial growth Prague emission layer 60.In the present embodiment, the material selection Al of Bragg reflecting layer 60xGa1-xAs/AlyGa1- yAs (or Ga0.51In0.49P/GaAs), wherein x is preferably that 0.98, y is preferably 0.08, and doping selects carbon, is adulterated dense
Degree is 2E18cm-3.The every thickness degree of Bragg reflecting layer 60 and periodicity are according to optical maser wavelength and reflection ratio setting.With 825nm
For wavelength laser, luminous reflectance example is in the case where 98%, Al0.98Ga0.02As/Al0.08Ga0.92As thickness is respectively
68.22nm and 56.22nm, periodicity 11.
Further, in the present embodiment, identical as the embodiment of Fig. 6, as shown in figure 8, it is preferred that electron beam evaporation, heat are steamed
Hair or magnetically controlled sputter method 60 surface of Bragg reflecting layer grow one layer of Pd/Zn/Pd as contact electrode layer 72；It is preferred that being electroplated
The metal layer (such as copper, nickel, molybdenum, titanium etc.) that method grows one layer of 1~30 μ m-thick is used as electrode layer 71 and structural support.
The structure that Fig. 9 shows the laser photovoltaic cell 400 of another exemplary embodiment according to the present utility model is shown
It is intended to, specifically, which provides a kind of film-type laser photovoltaic cell 400 based on GaAs material, the present embodiment and Fig. 6
The difference of embodiment be:
(1) the GaAs film-type laser photovoltaic cell 400 in the present embodiment includes the sub- battery 10 of 13 GaAs and is located at sub
12 tunnel knots between battery, to meet the output voltage requirement of 12V；
(2) scheme that the reflecting layer 80 in the present embodiment is combined using Bragg reflecting layer 60 with metal mirror layer 30；
(3) the GaAs film-type laser photovoltaic cell 400 in the present embodiment adds the method for chemical attack using mechanical polishing
Remove substrate material.
Specifically, in the present embodiment, (Al) GaInP that one layer of 50~300nm thickness is grown on substrate 90 replaces AlAs
Sacrificial layer, it is subsequent successively to grow the conductive layer of 300~500nm, the first son electricity by embodiment 1 as the barrier layer of substrate etching
Pond layer, the 12nd tunnel layer of the first tunnel layer ..., the 13rd sub- battery layers.
Further, in the present embodiment, it is one or more to continue epitaxial growth after the back surface field layer of the 13rd sub- battery
The Bragg reflecting layer 60 in period.The material of Bragg reflecting layer 60 can choose Ga0.51In0.49P/GaAs, AlxGa1- xAs/AlyGa1-yAs or other materials, in the present embodiment, preferred Ga0.51In0.49P/GaAs structure, doping select Mg or
Zn, doping concentration are preferably 2~5E18cm-3.The thickness of Bragg reflecting layer 60 need to be designed according to optical maser wavelength, such as be swashed
When a length of 825nm of light wave, Ga0.51In0.49P/GaAs thickness is respectively 62.5nm and 59.3nm.Comprehensively consider and determines Prague
Two factors of 60 periodicity of reflecting layer, in the present embodiment, Bragg reflecting layer 60 are preferably 1 to 3 periods.
Further, in the present embodiment, each of laser photovoltaic cell 400 sub- battery layers 10 are pressed far from incident side A
Direction sets gradually Ga0.51In0.49P Window layer 101, N+ type GaAs emitter region 102, the base area p-type GaAs 103, Al0.2GaAs
Back surface field layer 104.In the present embodiment, Window layer 101 and the preferred Si of emitter region 102 doping, doping concentration 2E18cm-3；GaAs
Base area 103 and the preferred Zn of back surface field layer 104 doping, doping concentration is respectively 1F17cm-3 and 2e18cm-3.
Further, in the present embodiment, the metal mirror layer 30 of GaAs laser photovoltaic cell 400 is fixed on blue treasured
On the substrates such as stone, substrate 90 is thinned to 50 μm using cmp method.Then edge of materials is protected using photoresist
Shield is got up, and is immersed phosphoric acid and is added in the chemical solution of hydrogen peroxide, by remaining GaAs substrate material erosion removal until exposing
Ga0.51In0.49P corrosion barrier layer obtains film-type laser photovoltaic cell structure.Further, using diluted nitric acid and
Hcl corrosion removes the barrier layer Ga0.51In0.49P, exposes GaAs conductive layer 1001.By Fig. 6 embodiment method in conduction
Electrode layer 71 and antireflection layer 50 are prepared on layer.
Each sub- battery optimal thickness method of design referring to shown in Fig. 7, in the present embodiment, sub- battery number are n=13, GaAs
Absorption coefficient=1 μm of material-1, reflection layer 80 reflectivity R take 0.98.To meet the incident laser energy for absorbing 98%, respectively
In the sub- battery 10 of GaAs absorbed layer optimal thickness be followed successively by 76.9nm, 83.0nm, 90.1nm, 98.5nm, 108.5nm,
120.5nm, 135.1nm, 152.9nm, 174.9nm, 201.4nm, 231.7nm, 261.7nm, 282.1nm, absorbed layer overall thickness
For 2017.3nm.
As a comparison, in the GaAs substrate of not set reflection layer 80 (metal mirror layer 30 and Bragg reflecting layer 60)
Battery structure in, reflectivity R=0, at this time from plane of illumination down each 10 optimal thickness of sub- battery be followed successively by 78.4nm,
85.0nm、93.0nm、102.5nm、114.2nm、129.0nm、148.1nm、173.9nm、210.6nm、267.2nm、
365.6nm, 582.4nm, 1562.2nm, absorbed layer overall thickness are 3912.0nm.
The present embodiment is substantially subtracting because introducing the reflection layer 80 including Bragg reflecting layer 60 and metal mirror layer 30
While thin battery thickness, the resistance of reduction device string, improvement battery heat dissipation performance, can also have under the conditions of high power density higher
Efficiency and better stability.
Although some embodiments of the utility model general plotting have been shown and have illustrated, those of ordinary skill in the art will
Understand, in the case where the principle and spirit without departing substantially from the utility model general plotting, these embodiments can be made a change, this
The range of utility model is limited with claim and their equivalent.
Claims (10)
1. a kind of laser photovoltaic cell has incident side and backlight side, includes: from backlight side to incident side sequence
Carry on the back metal layer；
In the reflection layer of back metal layer；And
At least one sub- battery above reflection layer；
Wherein, the back metal layer replaces substrate as the support substrate of at least one sub- battery.
2. laser photovoltaic cell according to claim 1, wherein at least one described sub- battery includes multiple sub- batteries,
There is tunnel junctions layer between two neighboring sub- battery.
3. laser photovoltaic cell according to claim 2, wherein the reflection layer includes metal mirror layer.
4. laser photovoltaic cell according to claim 3, wherein the metal mirror layer includes Cu mirror layer, Ag
One of mirror layer and Au mirror layer.
5. laser photovoltaic cell according to claim 2, wherein the reflection layer includes Bragg reflecting layer.
6. laser photovoltaic cell according to claim 2, wherein the reflection layer includes the metallic reflection of lamination arrangement
Mirror layer and Bragg reflecting layer, the Bragg reflecting layer is between metal mirror layer and sub- battery.
7. laser photovoltaic cell according to claim 6, wherein the Bragg reflecting layer includes 1-3 layers and is alternately arranged
High refractive index material layer and low refractive index material layer.
8. laser photovoltaic cell according to claim 1 to 6, wherein the back metal layer include electrode layer and
Contact electrode layer.
9. laser photovoltaic cell according to claim 1 to 6, wherein at least one described sub- battery includes more
A sub- battery of GaAs.
10. a kind of photoelectric converter, including such as the described in any item laser photovoltaic cells of claim 1-9.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108550648A (en) * | 2018-05-22 | 2018-09-18 | 江苏宜兴德融科技有限公司 | Laser photovoltaic cell and preparation method thereof, photoelectric converter |
| RU2802547C1 (en) * | 2023-02-14 | 2023-08-30 | Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук | Photoelectric converter of narrow-band radiation |
-
2018
- 2018-05-22 CN CN201820772552.8U patent/CN208256703U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108550648A (en) * | 2018-05-22 | 2018-09-18 | 江苏宜兴德融科技有限公司 | Laser photovoltaic cell and preparation method thereof, photoelectric converter |
| RU2802547C1 (en) * | 2023-02-14 | 2023-08-30 | Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук | Photoelectric converter of narrow-band radiation |
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