CN208226983U - Ldo和por的复用电路 - Google Patents
Ldo和por的复用电路 Download PDFInfo
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- CN208226983U CN208226983U CN201820940026.8U CN201820940026U CN208226983U CN 208226983 U CN208226983 U CN 208226983U CN 201820940026 U CN201820940026 U CN 201820940026U CN 208226983 U CN208226983 U CN 208226983U
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- resistance
- circuit
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- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
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Abstract
Description
相交节点 | 10 |
第一节点 | 20 |
第二节点 | 30 |
第一MOS晶体管 | M1 |
第二MOS晶体管 | M2 |
第三MOS晶体管 | M3 |
第四MOS晶体管 | M4 |
第五MOS晶体管 | M5 |
Claims (7)
Priority Applications (1)
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CN201820940026.8U CN208226983U (zh) | 2018-06-15 | 2018-06-15 | Ldo和por的复用电路 |
Applications Claiming Priority (1)
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CN201820940026.8U CN208226983U (zh) | 2018-06-15 | 2018-06-15 | Ldo和por的复用电路 |
Publications (1)
Publication Number | Publication Date |
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CN208226983U true CN208226983U (zh) | 2018-12-11 |
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CN201820940026.8U Active CN208226983U (zh) | 2018-06-15 | 2018-06-15 | Ldo和por的复用电路 |
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CN (1) | CN208226983U (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109992034A (zh) * | 2019-04-18 | 2019-07-09 | 豪威科技(上海)有限公司 | 一种低压差线性稳压器 |
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2018
- 2018-06-15 CN CN201820940026.8U patent/CN208226983U/zh active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109992034A (zh) * | 2019-04-18 | 2019-07-09 | 豪威科技(上海)有限公司 | 一种低压差线性稳压器 |
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Legal Events
Date | Code | Title | Description |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: 518004 Tailing Building 903, 5022 Fifth Avenue, Bantian Street, Longgang District, Shenzhen City, Guangdong Province Patentee after: SILICON (SHENZHEN) ELECTRONIC TECHNOLOGY Co.,Ltd. Address before: 518004 Room 1106, Block B, 7 Nanshan Science and Technology Ecological Park, Nanshan District, Shenzhen City, Guangdong Province Patentee before: SILICON (SHENZHEN) ELECTRONIC TECHNOLOGY Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200526 Address after: 24a, building C2, cuihai garden, no.2023, Qiaoxiang Road, Futian District, Shenzhen City, Guangdong Province Patentee after: Mo Bing Address before: 518004 Tailing Building 903, 5022 Fifth Avenue, Bantian Street, Longgang District, Shenzhen City, Guangdong Province Patentee before: SILICON (SHENZHEN) ELECTRONIC TECHNOLOGY Co.,Ltd. |
|
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Su Kuiren Inventor after: Gao Cheng Inventor after: Mo Bing Inventor before: Su Kuiren Inventor before: Gao Cheng Inventor before: Mo Bing Inventor before: Guo Jianping |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240304 Address after: 362200, Building E, 3rd Floor, Hengdali Business Building, Quan'an North Road, Wutan Village, Chidian Town, Jinjiang City, Quanzhou City, Fujian Province Patentee after: QUANZHOU SILICTEC ELECTRONIC TECHNOLOGY Co.,Ltd. Country or region after: China Address before: 24a, building C2, cuihai garden, No. 2023, Qiaoxiang Road, Futian District, Shenzhen, Guangdong 518000 Patentee before: Mo Bing Country or region before: China |