CN208225893U - A kind of polycrystalline mixes gallium solar cell - Google Patents

A kind of polycrystalline mixes gallium solar cell Download PDF

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CN208225893U
CN208225893U CN201820147344.9U CN201820147344U CN208225893U CN 208225893 U CN208225893 U CN 208225893U CN 201820147344 U CN201820147344 U CN 201820147344U CN 208225893 U CN208225893 U CN 208225893U
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electrode
polycrystalline
solar cell
gallium
aluminium
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李华
靳玉鹏
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Taizhou Longi Solar Technology Co Ltd
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Taizhou Longi Solar Technology Co Ltd
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

The utility model discloses a kind of polycrystalline to mix gallium solar cell, it include: to mix gallium silicon base doped with the polycrystalline of gallium, and the emitter on its light-receiving surface, it is placed in front surface antireflection film/passivating film of emitter surface, it is placed in the front electrode of front surface antireflection film/passivation film surface conductive material composition, conductive material high temperature sintering partial penetration front surface antireflection film/passivation membrane material opens diaphragm area by the part on front surface antireflection film/passivating film and emitter forms direct contact, and it is placed in the rear electrode of backside of substrate, wherein rear electrode consists of two parts, the aluminium electrode of back surface is set, and the silver electrode as welding photovoltaic component point.The preparation method of this solar cell includes surface-texturing being carried out in the silicon base for mix gallium, and prepare emitter in the front of battery, preparation passivation and antireflective coating in front, and prepares electrode, and metallization heat treatment process in the front and back of battery.

Description

A kind of polycrystalline mixes gallium solar cell
Technical field
The utility model relates to technical field of solar batteries, in particular to a kind of polycrystalline mixes gallium solar cell.
Background technique
Currently, gradually exhausting with fossil energy, for solar cell as new energy substitution scheme, use is more and more wider It is general.Solar cell is the device that the luminous energy of the sun is converted to electric energy.Solar cell generates carrier using photogenic voltage principle, Then carrier is drawn using electrode, to be conducive to efficiently use electric energy.
P-type solar cell substrate used at present, generally doped with the silicon wafer of boron element.But it uses doped with boron member As the solar cell of substrate, certain decaying can occur the polysilicon of element under solar irradiation for battery efficiency together.This decaying Referred to as light decay (LID).The efficiency decaying 1.5~7% of solar cell made of B-doped Polycrystalline Silicon piece in photovoltaic industry at present, The doping concentration of boron element, oxygen content, battery structure have a certain impact to attenuation degree.The photo attenuation of this battery generates Essential reason and doping substrate in instead of the oxygen atom in position boron atom and polysilicon light inject in the case where will form Boron oxygen complex.And boron oxygen complex is deep energy level complex centre, can reduce the service life of minority carrier in this way, to reduce few The diffusion length of number carrier, causes the efficiency of solar cell to reduce, and influence the long-term reliability of battery.
Utility model content
It in view of the above problems, the utility model, which provides a kind of polycrystalline, mixes gallium solar cell, can solve the above problem, drop Photo attenuation caused by the low oxygen complex as boron.
The technical solution of the utility model is:
A kind of polycrystalline mixes gallium solar cell, successively includes: front electrode, front surface antireflection film/passivation by front to the back side Film, emitter, polycrystalline mix gallium silicon base and rear electrode；The rear electrode includes back side aluminium electrode and back side silver electrode.
The front electrode includes the thin grid line in front, and the thin grid line in front passes through partial penetration front surface antireflection film/passivation Film is opened diaphragm area by the part on front surface antireflection film/passivating film and is formed with emitter and directly contacts.
The back side of polycrystalline silicon substrate is arranged in the aluminium electrode, and back side silver electrode is arranged in aluminium electrode；Aluminium electrode and Back side silver electrode mixes gallium silicon base rear-face contact with polycrystalline.
The aluminium electrode and polycrystalline mixes the hole doping layer between gallium silicon base comprising one layer of doping component for aluminium, hole Doped layer with a thickness of 1~15um.
Further include one layer of alusil alloy layer between the hole doping layer and aluminium electrode, alusil alloy layer with a thickness of 1~ 5um。
Front surface antireflection film/the passivating film is silica, silicon nitride, silicon oxynitride, aluminium oxide and carborundum films One of or a variety of laminations constitute；Front surface antireflection film/passivating film refractive index is 1.5~2.5,50~100nm of thickness.
A kind of polycrystalline mixes the preparation method of gallium solar cell, comprising the following steps:
1) gallium silicon base is mixed to polycrystalline and carries out surface-texturing and cleaning；
2) gallium silicon base front is mixed in polycrystalline to carry out preparing emitter；
3) gallium silicon base is mixed to polycrystalline and carries out edge insulation processing；
4) emitter for mixing gallium silicon base to polycrystalline carries out front surface antireflection film/passivation film preparation；
5) gallium silicon base front is mixed to polycrystalline, the back side carries out electrocondution slurry and is graphically coated with；
6) it carries out metallization heat treatment process and prepares front electrode and rear electrode respectively.
Compared with the existing technology, the utility model has following technical effect that
The utility model includes mixing gallium silicon base, and the emitter on its light-receiving surface doped with the polycrystalline of gallium, is placed in Front surface antireflection film/passivating film of emitter surface is being placed in front surface antireflection film/passivation film surface conductive material composition just Face electrode, conductive material high temperature sintering partial penetration front surface antireflection film/passivation membrane material or by front surface antireflection film/blunt Part on change film opens diaphragm area and semiconductor forms direct contact, and is placed in the rear electrode of backside of substrate, using polycrystalline Base material of the gallium silicon as solar cell is mixed, polycrystalline is prepared for and mixes gallium solar cell, mixing gallium can be reduced in doping substrate It will form boron oxygen complex in the case where light injects instead of the oxygen atom of position boron atom and polysilicon mid gap state, can increase in this way Add the service life of minority carrier, to increase the diffusion length of minority carrier, causes the efficiency of solar cell to increase, and protect Demonstrate,prove the long-term reliability of battery.The battery structure can reduce or inhibit substantially the light decay of polycrystalline silicon solar cell, can be by polycrystalline The light decay of silicon solar cell controls within 1%.
Further, there can also be a certain amount of boron element in silicon base, can also there is certain suppression to light decay in the case Effect processed, but inhibitory effect can be slightly worse than the silicon wafer for only mixing gallium.
The one layer of doping component between the aluminium electrode and monocrystal silicon substrate being further formed is the silicon substrate hole of aluminium Doped layer.The silicon substrate hole doping layer and silicon base of this layer of aluminium form the potential difference of p+/p, to improve opening for entire battery Road voltage also reduces the recombination rate near electrode, to improve transfer efficiency.
It may also include one layer of alusil alloy layer between the hole doping layer and aluminium electrode, alusil alloy layer is with a thickness of 1 ~5um.The presence of this alusil alloy layer, the semiconductor base of the conductive electrode and p-type that can make aluminum, which is formed, preferably to be connect Touch performance.
The preparation method that the utility model polycrystalline mixes gallium solar cell includes: that Surface Texture is carried out in the silicon base for mix gallium Change, and prepares emitter in the front of battery, preparation passivation and antireflective coating in front, and the obverse and reverse system in battery Standby electrode, and metallization heat treatment process, integrated artistic is simple, is suitble to industrialized production.
Detailed description of the invention
Fig. 1 is the battery schematic diagram of an example in the embodiment of the solar cell of the utility model.
Fig. 2 is the front electrode schematic diagram of an example in the embodiment of the solar cell of the utility model.
Fig. 3 is the rear electrode schematic diagram of an example in the embodiment of the solar cell of the utility model.
Wherein mark: 1 is silicon base, and 2 be emitter, and 3 be front surface antireflection film/passivating film, and 4 be back side aluminium electrode, and 5 are Back side silver electrode, 6 be the thin grid line in front, and 7 be positive connection electrode.
Specific embodiment
Citing specific embodiment is illustrated the utility model below.It should be pointed out that following embodiment is served only for The utility model is described further, the protection scope of the utility model is not represented, other people are according to the present utility model to mention Show the nonessential modification and adjustment made, still falls within the protection scope of the utility model.
As shown in Figure 1, a kind of polycrystalline of the utility model mixes gallium solar cell, comprising: polycrystalline mixes gallium silicon base 1, Yi Ji Emitter 2 and back side aluminium electrode thereon, are placed in the front surface antireflection film/passivating film 3 on 2 surface of emitter, are placed in positive anti-reflection The front electrode being made of conductive material for penetrating 3 surface of film/passivating film is placed in the rear electrode that polycrystalline mixes 1 back side of gallium silicon base； Front side conductive material by high temperature sintering partial penetration front surface antireflection film/3 material of passivating film or by front surface antireflection film/ Diaphragm area is opened in part on passivating film 3 and emitter 2 forms direct contact, forms front electrode；Described rear electrode two parts Composition, the back side aluminium electrode 4 including being coated on back surface, and the back side silver electrode 5 as welding photovoltaic component point.Two parts Electrode is mixed 1 back side of gallium silicon base and is directly contacted with the polycrystalline of battery.It mixes gallium element in gallium silicon base 1 doped with the polycrystalline of gallium and mixes Miscellaneous concentration is 1 × 1013~1 × 1017A atom/cubic centimetre.
Preferably, polycrystalline mix gallium silicon base 1 can also be doped with boron, wherein the concentration of boron element doping is 1 × 1013~1 ×1017A atom/cubic centimetre.
Front surface antireflection film/passivating film of semiconductor surface is made of the superposition of one or more layers film；Positive antireflective Film/passivating film is made of one of silica, silicon nitride, silicon oxynitride, aluminium oxide, silicon carbide, or by a variety of groups therein At；Front surface antireflection film/passivating film overall refractive index 1.5~2.5, front surface antireflection film/passivating film overall thickness 50~ 100nm。
Light-receiving surface of the emitter 2 in battery.The front electrode of solar cell, preferably silver electrode.
As shown in Fig. 2, front electrode includes for guiding the thin grid line 6 in the front of electric current and connecting for the positive of collected current Receiving electrode 7, the thin grid line 6 in front are arranged vertically with positive connection electrode 7.
As shown in figure 3, the back side silver electrode 5 in rear electrode is distributed in the region at the back side in local bulk and polycrystalline is mixed Gallium silicon base 1 forms direct contact, and polycrystalline mixes remaining backside surface of gallium silicon base 1 except marginal portion and silver electrode peripheral part Other than region, residual surface is covered by back side aluminium electrode 4；Back side aluminium electrode 4 and polycrystalline mix gallium silicon base 1 and form aluminium electrode Rear-face contact.
The rear-face contact of aluminium electrode consists of the following parts: main conductive ingredient is back side aluminium electrode 4, and polycrystalline mixes gallium silicon substrate Bottom 1, and it is placed in back side aluminium electrode 4 and polycrystalline mixes the silicon substrate hole that one layer of main doping component between gallium silicon base 1 is aluminium Doped layer, the hole doping layer can be further doped with boron element；Hole doping layer hole boron doping concentration is 5 × 1016 ~1 × 1021A atom/cubic centimetre；The hole doping layer with a thickness of 1~15um.
It further include one layer of alusil alloy layer, with a thickness of 1~5um between hole doping layer and aluminium electrode 4.
Preferably, the rear-face contact of aluminium electrode also may not include hole doping layer or alusil alloy layer.
The utility model additionally provides the preparation method that a kind of polycrystalline mixes gallium solar cell, comprising the following steps:
1) gallium is mixed to polycrystalline and mixes the progress surface-texturing of gallium silicon base 1 and cleaning；Surface-texturing process is sour making herbs into wool Journey or reactive ion etching making herbs into wool or silver ion assist making herbs into wool.
2) emitter 2 is carried out to prepare；
3) edge insulation processing is carried out；
4) passivated reflection reducing for carrying out light-receiving surface penetrates the preparation of film 3；
5) the electrode slurry bed of material comprising conductive compositions is graphically formed in front and back sides；
6) metallization heat treatment process is carried out；The peak temperature for the heat treatment process that metallizes is 500~1000 DEG C.Electrode slurry It include a step or several printing process and one or several drying courses in the graphical distributed process of the bed of material, wherein several The electrocondution slurry of step can be identical, can not also be identical.
7) it makes annealing treatment, 500~800 DEG C of annealing temperature.
Embodiment 1
The first step mixes gallium silicon wafer to polycrystalline and carries out surface-texturing；This mixes gallium silicon wafer opposite side distance for 156mm, in silicon wafer not Boracic, the concentration containing gallium are 2 × 1016A atom/cubic centimetre.Gallium silicon wafer is mixed in Chained cleaning machine using HF acid to this polycrystalline The texturing that surface is completed with nitric acid mixed solution forms hole shape anti-reflection structure on surface.Wherein 8 DEG C of solution temperature continue Time 10min.And pass through KOH alkali cleaning, and washing, HF pickling, washing, drying and etc..
Second step carries out emitter preparation.The preparation of pn-junction is completed in tubular type heating diffusion furnace tube, uses N2Carry POCl3 Source.830 DEG C of peak temperature, diffusion time 110 minutes of diffusion.
Third step carries out insulation processing.Insulation processing is completed in Chained cleaning machine, the mixing using HF acid and nitric acid is molten Liquid, the removal back side will cause the n-type doping area of electric leakage around the n-type doping area formed and edge is expanded.In addition in this processing step In also include that HF pickling removes positive phosphorosilicate glass.
4th step carries out the preparation that front passivated reflection reducing penetrates film.Nitrogen is carried out using the enhanced plasma gas-phase deposit of tubular type The deposition of SiClx, double-layer silicon nitride is as passivation and antireflective coating.Wherein underlying silicon nitride thickness 20nm, refractive index 2.20, on Layer silicon nitride thickness 40nm, refractive index 1.95.
5th step coats conductive material in the front and back of battery as required.We use silk screen in the present embodiment Mode of printing carries out electrocondution slurry and is graphically coated with.Front uses the silver paste for penetrating silicon nitride as thin grid line slurry, thin grid line Radical 100, connection electrode is using the non-electrocondution slurry for burning type silicon nitride, and connection electrode radical 5, connection electrode and thin grid Line direction is orthogonal and is connected in intersection.The back side uses screen printing mode to be printed with aluminium paste as back electric field.
6th step carries out metallization heat treatment process.In the process, using chain-type sintering furnace, it is sintered peak temperature 850 DEG C, this temperature is to survey the temperature of silicon chip surface.Front electrode and rear electrode are prepared respectively.
Embodiment 2
The first step mixes gallium silicon wafer to polycrystalline and carries out surface-texturing；This mixes gallium silicon wafer opposite side distance for 156mm, in silicon wafer not Boracic, the concentration containing gallium are 3 × 1015A atom/cubic centimetre.Gallium silicon wafer is mixed in Chained cleaning machine using HF acid to this polycrystalline The texturing that surface is completed with nitric acid mixed solution forms hole shape anti-reflection structure on surface.Wherein 8 DEG C of solution temperature continue Time 10min.And pass through KOH alkali cleaning, and washing, HF pickling, washing, drying and etc..
Second step carries out emitter preparation.The preparation of pn-junction is completed in tubular type heating diffusion furnace tube, uses N2Carry POCl3 Source.835 DEG C of peak temperature, diffusion time 90 minutes of diffusion.
Third step carries out insulation processing.Insulation processing is completed in Chained cleaning machine, the mixing using HF acid and nitric acid is molten Liquid, the removal back side will cause the n-type doping area of electric leakage around the n-type doping area formed and edge is expanded.In addition in this processing step In also include that HF pickling removes positive phosphorosilicate glass.
4th step carries out the preparation that front passivated reflection reducing penetrates film.Nitrogen is carried out using the enhanced plasma gas-phase deposit of tubular type The deposition of SiClx, double-layer silicon nitride is as passivation and antireflective coating.Wherein underlying silicon nitride thickness 20nm, refractive index 2.20, on Layer silicon nitride thickness 40nm, refractive index 1.95.
5th step coats conductive material in the front and back of battery as required.We use silk screen in the present embodiment Mode of printing carries out electrocondution slurry and is graphically coated with.Front uses the silver paste for penetrating silicon nitride as thin grid line slurry, thin grid line Radical 100, connection electrode is using the non-electrocondution slurry for burning type silicon nitride, and connection electrode radical 5, connection electrode and thin grid Line direction is orthogonal and is connected in intersection.The back side is printed with aluminium paste using screen printing mode.
6th step carries out metallization heat treatment process.In the process, using chain-type sintering furnace, it is sintered peak temperature 850 DEG C, this temperature is to survey the temperature of silicon chip surface.Front electrode and rear electrode are prepared respectively.
Test result is as follows for the light decay of embodiment battery: light decay test test condition: light intensity 1suns, and 65 DEG C of environment temperature, Time is for 24 hours.
Table 1
Data show that the light decay of battery is controlled 3% or less in table.Preferably inhibit the light decay of battery.
The protection scope of the utility model is not limited to the above embodiments, comes for those of ordinary skill in the art It says, if the various changes and deformation to the utility model progress belong to the utility model claims and equivalent technologies range It is interior, then including the intention of the utility model also includes these changes and deforms.

Claims (6)

1. a kind of polycrystalline mixes gallium solar cell, which is characterized in that by front to the back side successively include: front electrode, positive anti-reflection It penetrates film/passivating film (3), emitter (2), polycrystalline and mixes gallium silicon base (1) and rear electrode；The rear electrode includes back aluminium Electrode (4) and back side silver electrode (5)；The front electrode includes the thin grid line (6) in front and positive connection electrode (7).
2. a kind of polycrystalline according to claim 1 mixes gallium solar cell, which is characterized in that the thin grid line (6) in front passes through office Portion penetrate front surface antireflection film/passivating film (3) or by the part on front surface antireflection film/passivating film (3) open diaphragm area with Emitter (2), which is formed, directly to be contacted.
3. a kind of polycrystalline according to claim 1 mixes gallium solar cell, which is characterized in that aluminium electrode (4) setting At the back side of polycrystalline silicon substrate (1), back side silver electrode (5) is arranged on aluminium electrode (4)；Aluminium electrode (4) and back side silver electrode (5) Gallium silicon base (1) rear-face contact is mixed with polycrystalline.
4. a kind of polycrystalline according to claim 3 mixes gallium solar cell, which is characterized in that the aluminium electrode (4) and more Crystalline substance mix between gallium silicon base (1) be comprising one layer of doping component aluminium hole doping layer, hole doping layer with a thickness of 1~ 15um。
5. a kind of polycrystalline according to claim 4 mixes gallium solar cell, which is characterized in that the hole doping layer and aluminium It further include one layer of alusil alloy layer between electrode (4), alusil alloy layer is with a thickness of 1~5um.
6. a kind of polycrystalline according to claim 1 mixes gallium solar cell, which is characterized in that the front surface antireflection film/ Passivating film (3) is that one of silica, silicon nitride, silicon oxynitride, aluminium oxide and carborundum films or a variety of laminations are constituted；Just Face antireflective coating/passivating film (3) refractive index is 1.5~2.5,50~100nm of thickness.
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