CN208188153U - A kind of preparation facilities of nanometer pinpoint - Google Patents
A kind of preparation facilities of nanometer pinpoint Download PDFInfo
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- CN208188153U CN208188153U CN201820667723.0U CN201820667723U CN208188153U CN 208188153 U CN208188153 U CN 208188153U CN 201820667723 U CN201820667723 U CN 201820667723U CN 208188153 U CN208188153 U CN 208188153U
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- slot
- sliding block
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- metal ring
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Abstract
The utility model discloses a kind of preparation facilities of nanometer pinpoint comprising cradle portion, lever assembly and electrochemical etching portion；Cradle portion includes bottom plate and the column with T-slot that is mounted on bottom plate, and clamping has T-block in T-slot, and the closure for locking T-block is equipped on column；Lever assembly includes the bracket with fulcrum, the horizontal arm with card slot, two sliding blocks being held in card slot on bottom plate, and for horizontal arm support on fulcrum, two sliding blocks are separately installed with wire fixture and counterweight；The screw for fastening is mounted on sliding block；Electrochemical etching portion includes DC power supply and the metal ring that is connected in T-block, and two electrodes of DC power supply are respectively communicated with metal ring and wire fixture.Using the utility model, two nanometer pinpoints can be prepared using same one metal wire simultaneously.
Description
Technical field
The utility model belongs to micro-nano manufacture field, is related to a kind of preparation facilities of nanometer pinpoint.
Background technique
Nanoscale needle point is very widely used, such as the STM probe in scanning tunneling microscope, the cell in medicine are micro-
The fields such as the micro Process in operation, specific manufacture industry.The preparation of nanometer pinpoint is caused frequently with electrochemical etching, mechanical shearing, field
The methods of evaporation, focused ion milling.Wherein, electrochemical etching method is because its unique removal form, device are simple, convenient fast
The features such as prompt and be widely used.
Electrochemical etching method is broadly divided into two major classes according to its device.One is submergence etching method, is used to prepare at this time
The wire of needle point submerges in the electrolytic solution as anode, and cathode is generally the metal ring submerged in the electrolytic solution, exists at this time
Between two electrodes apply power supply carry out electrochemical etching, due to electric field the solution rate for being distributed in liquid level intersection tungsten wire most
Fastly, it is finally broken under the gravity of lower part.It needs to turn off circuit at this time, prevents nanometer pinpoint from continuing corrosion and passivation,
And the nanometer pinpoint under electrolysis liquid surface cannot be used since its shape is poor and is difficult to pick up, primary etching is only capable of
Obtain a nanometer pinpoint for being located at electrolyte top.
Another method is liquid film etching method, uses a metal ring as cathode at this time, and herein by electrolyte suspension
In metal ring, electrolyte required for etching is provided in the form of liquid film.It is (or other as anode to prepare the tungsten wire of needle point
Metal material) this liquid film is passed through, two parts up and down are formed by line of demarcation of liquid film.It is powered and carries out electrochemical etching, tungsten wire is in liquid
It is broken at the liquid level line of demarcation of film upper surface, forms two nanometer pinpoints up and down.At this time normally due to convenient without designing in circuit
Current detecting disconnect system, but use lower end device receive lower part nanometer pinpoint, top needle point due to continue receive etching and
Passivation.Therefore liquid film etching method generally uses this nanometer pinpoint of lower end, and casts out upper end needle point.
Utility model content
In view of the above-mentioned problems, the application proposes a kind of preparation facilities of nanometer pinpoint, the present apparatus do not use current detecting and
The complicated system such as control can prepare two nanometer pinpoints using same one metal wire, specifically using the device simultaneously
Technical solution is as follows:
A kind of preparation facilities of nanometer pinpoint comprising cradle portion, lever assembly and electrochemical etching portion；The cradle portion
Including horizontally disposed bottom plate and the column being mounted on bottom plate, column is arranged in the upside of bottom plate, T-type is provided on column
Slot, T-slot extend through the upper surface of column along the vertical direction；Clamping has T-block in T-slot, which can be along T
Type groove moves up and down, and the closure for locking T-block is equipped on column；
The lever assembly includes bracket, horizontal arm, the first sliding block and the second sliding block, and the bracket is installed along the vertical direction
On bottom plate, fulcrum is provided on bracket, the central portion of horizontal arm is supported on fulcrum, horizontal arm can around branch spot wobble,
Card slot is offered on horizontal arm, the first sliding block is held in card slot and can move along card slot, the first sliding block with the second sliding block
It is located at the two sides of fulcrum with the second sliding block；Wire fixture is installed on the first sliding block, is connected with counterweight on the second sliding block；
First lock-screw is installed on the first sliding block, card can be fixed on for the first sliding block by screwing the first lock-screw
In slot；
Second lock-screw is installed on the second sliding block, card can be fixed on for the second sliding block by screwing the second lock-screw
In slot；
The electrochemical etching portion includes DC power supply and is connected to metal ring in T-block, and the cathode of DC power supply connects
Logical metal ring, the anode connection wire fixture of DC power supply；The wire fixture is for clamping wire.The round metal
The internal diameter of ring is preferably 4-5mm.
The present apparatus at work, is clamped on wire fixture, then in round metal after wire is passed through metal ring
Applying electrolyte in ring and form electrolyte membrane, connects DC power supply, the electrolyte in electrolyte membrane, which forms wire, to be etched,
Under corrasion, the wire positioned at liquid level of electrolyte intersection is tapered, finally under the gravity of lower metal silk
It breaks, forms two nanometer pinpoints.After wire breakage, the nanometer pinpoint of lower end falls downwards disengaging electrolyte membrane, stops
Electrochemical etching；The nanometer pinpoint of upper end is pulled away from rapidly electrolyte membrane under moment loading caused by counterweight upwards, and is stopped
Thus only electrochemical etching disposably forms two nanometer pinpoints.
Compared to the prior art, using the device in the utility model, the producing efficiency of nanometer pinpoint can be improved.
Further, to guarantee to be formed stable electrolyte membrane in metal ring, the metal ring it is horizontally disposed or with
Horizontal plane has an angle, angle≤5 °.It is preferred that metal ring is horizontally disposed.Horizontally disposed metal ring, is formed by
Electrolyte membrane is centrosymmetric structure, and the structure for being formed by nanometer pinpoint is well-balanced, has the symmetrical structure of more standard.
Further, a receiver is provided with below metal ring, which has one to be used to receive nanometer pinpoint
Accommodating chamber.Using the recipient, the needle end of nanometer pinpoint can be made to fall in recipient upward, can effectively be prevented
Only it is damaged since needle end touches ground.
It further, further include a hoistable platform, the receiver is placed on this hoistable platform.It, can using hoistable platform
To adjust the height of receiver, so that nanometer pinpoint falls distance with appropriate.
Specifically, the closure is fastening screw, and the two sides on the side of column along T-slot are provided with two column screw threads
Hole, each column threaded hole include the threaded hole of several arrangements of uniform intervals along the vertical direction, and the threaded hole is connected to T-slot, described
Fastening screw is screwed in the threaded hole, and when screwing fastening screw, the end of fastening screw, which can be resisted against, is held in T-slot
In interior T-block, T-block is fixed in T-slot；It is provided at least two threaded holes along the vertical direction.Fastening screw can be with
Easily T-block is fixed in T-slot, guarantees stability of the T-block in T-slot.
Specific step is as follows when using above-mentioned preparation facilities preparation nanometer pinpoint:
(1), along the height of T-slot adjustment T-block, and the height of T-block is locked with closure；
(2), wire is clamped in wire fixture and wire is made vertically to pass through the central portion of metal ring；
(3), adjusting the first sliding block and the second sliding block keeps horizontal arm holding horizontal；
(4), apply KOH electrolyte in metal ring and form electrolyte membrane, electric current is connected to after electrolyte membrane；Wire
Be tapered in liquid level intersection due to electrochemical etching, until under the effect of gravity, using electrolyte membrane as divisional plane, lower half
Section wire is pulled off from electrolyte membrane with upper semisection wire, and lower semisection wire falls downwards and is detached from electrolyte membrane shape
Cheng Yigen nanometer pinpoint；Under leverage, upper semisection wire is pulled away from rapidly electrolyte membrane upwards and forms another nanometer
Needle point.
Preferably, the concentration of KOH electrolyte is 1-3mol/L.The voltage of DC power supply is 5-8V.
Using the preparation method, two nanometer pinpoints, more existing skill successfully can be prepared simultaneously with an one metal wire
About one times of efficiency can be improved in the production efficiency of art.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of an embodiment of the present invention.
Specific embodiment
Referring to Fig. 1, a kind of preparation facilities of nanometer pinpoint comprising cradle portion, lever assembly and electrochemical etching portion；
Cradle portion includes the horizontally disposed column 2 bottom plate 1 and be mounted on bottom plate, and the upside of bottom plate 1 is arranged in column 2, in column 2
On be provided with T-slot 30, T-slot 30 extends through the upper surface of column 2 along the vertical direction, and T-slot 30 specifically includes arrangement
In intracorporal first slot 31 of column 2, the side of column 2 can be run through outward perpendicular to the second slot 32 of the first slot 31, the second slot 32
201.Clamping has T-block 4 in T-slot 30, which can move up and down along T-slot 30, is equipped with and is used on column 2
The closure of T-block 4 is locked, in the present embodiment, closure is fastening screw 3, and connection T-slot 30 is offered on column 2
Threaded hole 301, fastening screw 3 is screwed in the threaded hole 301, when screwing fastening screw 3, the end energy of fastening screw 3
It is enough resisted against in the T-block 4 being held in T-slot, T-block 4 is fixed in T-slot.For convenience of adjustment, exist along the vertical direction
It is provided with multiple threaded holes on column 2, and is arranged to two column along the two sides uniform intervals of the second slot 32.In other embodiments,
The distance between neighbouring threaded hole can be configured according to the width of T-block in above-below direction.
Lever assembly includes that bracket 16, horizontal arm 14, the first sliding block 13 and the second sliding block 21, bracket 16 are pacified along the vertical direction
On bottom plate 1, fulcrum 15 is provided on bracket 1, the central portion of horizontal arm 14 is supported on fulcrum 15, and horizontal arm 14 can
It is swung around fulcrum 15, card slot 22 is offered on horizontal arm 14, the first sliding block 13 and the second sliding block 21 are held in card slot 22 simultaneously
It can be moved along card slot 22, the first sliding block 12 and the second sliding block 21 are located at the two sides of fulcrum 15；It is equipped on the first sliding block 13
Wire fixture 10 is connected with counterweight 18 on the second sliding block 21.Wire fixture 10 is specifically connected indirectly to through connecting plate 11
On first sliding block 13, it will be understood that in other embodiments, wire fixture 10 can be directly connected on the first sliding block 13.
In the present embodiment, counterweight 18 is connected on the second sliding block 21 through connecting rope 17, it is possible to understand that counterweight 18 can be directly connected to
On second sliding block 21, or other connectors is used to be connected on the second sliding block 21.
First lock-screw 12 is installed on the first sliding block 13, screwing the first lock-screw 12 can be by the first sliding block 13
It is fixed in card slot 22.Second lock-screw 20 is installed on the second sliding block 21, screwing the second lock-screw 20 can be by
Two sliding blocks 21 are fixed in card slot 22.
Electrochemical etching portion includes DC power supply 19 and is connected to metal ring 8 in T-block 4, in the present embodiment, T-type
Block 4 is copper material, and a cathode of DC power supply 19 is connected in T-block 4, and is connected to metal ring 8 through T-block 4；Direct current
The anode of power supply 19 is connected on connecting plate 11, and connecting plate 11 is copper sheet, another electrode of DC power supply 19 is made to be connected to metal
Silk fixture 10；The wire fixture 10 is for clamping wire 9.
In the present embodiment, metal ring 8 is horizontally disposed.It is understood that metal ring can omit in other embodiments
Angle between low dip, with horizontal plane is best≤and 5 °.In the present embodiment, the internal diameter of metal ring 8 is 4mm, it will be understood that
In other embodiments, the internal diameter of metal ring can also other arbitrary dimensions between 4.5mm or 5mm or 4-5mm.
To protect nanometer pinpoint.In the present embodiment, the lower section of metal ring 8 is provided with a receiver 6, the receiver
6 accommodating chambers 61 for being used to receive nanometer pinpoint with one.
To be adjusted convenient for the height to receiver, it is also provided with a hoistable platform 5, receiver 6 in the present embodiment
It is placed on hoistable platform 5.Specifically in the present embodiment, hoistable platform 5 is a rotary lifting platform.
Nanometer pinpoint is prepared using the preparation facilities of the nanometer pinpoint in the present embodiment, the specific steps are as follows:
(1), the height of T-block 4 is adjusted along T-slot 30, and is locked the height of T-block 4 with fastening screw 3.
(2), wire 9 is clamped in wire fixture 10 and passes through wire 9 vertically in metal ring 8
Centre portion；In the present embodiment, wire 9 specifically uses tungsten wire；It is appreciated that in other embodiments, according to different needs,
It can also be using any one of iron wire, cobalt silk, nickel wire or titanium silk or using alloy wire prepared by above-mentioned each material.
(3), adjusting the first sliding block 13 and the second sliding block 21 keeps 14 holding of horizontal arm horizontal.
(4), apply the KOH electrolyte that concentration is 3mol/L in metal ring 8 and form electrolyte membrane 7, electric current is through being electrolysed
It is connected to after liquid film；Wire is tapered in liquid level intersection due to electrochemical etching, until under the effect of gravity, with electrolysis
Liquid film is divisional plane, and lower semisection wire is pulled off from electrolyte membrane with upper semisection wire, and lower semisection wire falls downwards
It falls and is detached from electrolyte membrane and form a nanometer pinpoint；Under leverage, upper semisection wire is pulled away from rapidly electrolysis upwards
Another nanometer pinpoint of liquid film forming.
It is appreciated that in other embodiments, the concentration of KOH electrolyte can also be 1mol/L or 3mol/L, or according to
It is specific to require, specific concentration is determined between 1-3mol/L.
In the present embodiment, the voltage of DC power supply is set as 7V.It is understood that in other embodiments, DC power supply
Voltage according to specific needs, can also can also specifically be selected between 5-8V certainly for 5V or 8V.
In the present embodiment, two nanometer pinpoints successfully can be prepared simultaneously with an one metal wire, compared with the prior art
Production efficiency about one times of efficiency can be improved.
Claims (6)
1. a kind of preparation facilities of nanometer pinpoint, which is characterized in that including cradle portion, lever assembly and electrochemical etching portion；
The cradle portion includes horizontally disposed bottom plate and the column that is mounted on bottom plate, and the upside of bottom plate is arranged in column,
T-slot is provided on column, T-slot extends through the upper surface of column along the vertical direction；Clamping has T-block in T-slot,
The T-block can be moved up and down along T-slot, and the closure for locking T-block is equipped on column；
The lever assembly includes bracket, horizontal arm, the first sliding block and the second sliding block, and the bracket is mounted on bottom along the vertical direction
On plate, fulcrum is provided on bracket, the central portion of horizontal arm is supported on fulcrum, and horizontal arm can be around branch spot wobble, in water
Offer card slot on flat arm, the first sliding block is held in card slot and can move along card slot with the second sliding block, the first sliding block and the
Two sliding blocks are located at the two sides of fulcrum；Wire fixture is installed on the first sliding block, is connected with counterweight on the second sliding block；
First lock-screw is installed on the first sliding block, card slot can be fixed on for the first sliding block by screwing the first lock-screw
It is interior；
Second lock-screw is installed on the second sliding block, card slot can be fixed on for the second sliding block by screwing the second lock-screw
It is interior；
The electrochemical etching portion includes DC power supply and the metal ring that is connected in T-block, the cathode connection of DC power supply
Metal ring, the anode connection wire fixture of DC power supply；The wire fixture is for clamping wire.
2. preparation facilities according to claim 1, which is characterized in that the metal ring it is horizontally disposed or with horizontal mask
There is an angle, angle≤5 °.
3. preparation facilities according to claim 1, which is characterized in that a receiver is provided with below metal ring,
The receiver has an accommodating chamber for being used to receive nanometer pinpoint.
4. preparation facilities according to claim 3, which is characterized in that further include a hoistable platform, the receiver is placed
On hoistable platform.
5. preparation facilities according to claim 1, which is characterized in that the closure is fastening screw, in the side of column
Two sides on face along T-slot are provided with two column threaded holes, and each column threaded hole includes that several uniform intervals along the vertical direction are arranged
Threaded hole, the threaded hole are connected to T-slot, and the fastening screw is screwed in the threaded hole, when screwing fastening screw, fastening
The end of screw can be resisted against in the T-block being held in T-slot, and T-block is fixed in T-slot.
6. preparation facilities according to claim 1, which is characterized in that the internal diameter of the metal ring is 4-5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820667723.0U CN208188153U (en) | 2018-05-04 | 2018-05-04 | A kind of preparation facilities of nanometer pinpoint |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820667723.0U CN208188153U (en) | 2018-05-04 | 2018-05-04 | A kind of preparation facilities of nanometer pinpoint |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208188153U true CN208188153U (en) | 2018-12-04 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201820667723.0U Expired - Fee Related CN208188153U (en) | 2018-05-04 | 2018-05-04 | A kind of preparation facilities of nanometer pinpoint |
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| CN (1) | CN208188153U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108318710A (en) * | 2018-05-04 | 2018-07-24 | 南京工业职业技术学院 | A kind of preparation facilities and preparation method of nanometer pinpoint |
| CN109706515A (en) * | 2019-01-11 | 2019-05-03 | 中国电子科技集团公司第三十八研究所 | A kind of preparation facilities and preparation method of the tungsten wire needle point of controllable draw ratio |
-
2018
- 2018-05-04 CN CN201820667723.0U patent/CN208188153U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108318710A (en) * | 2018-05-04 | 2018-07-24 | 南京工业职业技术学院 | A kind of preparation facilities and preparation method of nanometer pinpoint |
| CN109706515A (en) * | 2019-01-11 | 2019-05-03 | 中国电子科技集团公司第三十八研究所 | A kind of preparation facilities and preparation method of the tungsten wire needle point of controllable draw ratio |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20181204 Termination date: 20210504 |
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| CF01 | Termination of patent right due to non-payment of annual fee |